CN111223973B - 发光二极管阵列 - Google Patents

发光二极管阵列 Download PDF

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Publication number
CN111223973B
CN111223973B CN202010064109.7A CN202010064109A CN111223973B CN 111223973 B CN111223973 B CN 111223973B CN 202010064109 A CN202010064109 A CN 202010064109A CN 111223973 B CN111223973 B CN 111223973B
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China
Prior art keywords
light emitting
emitting diode
upper electrode
semiconductor layer
layer
Prior art date
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CN202010064109.7A
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English (en)
Chinese (zh)
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CN111223973A (zh
Inventor
张锺敏
蔡钟炫
李俊燮
徐大雄
金贤儿
卢元英
姜珉佑
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Seoul Viosys Co Ltd
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Seoul Viosys Co Ltd
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Priority claimed from KR1020130088714A external-priority patent/KR101893578B1/ko
Priority claimed from KR1020130088712A external-priority patent/KR101893579B1/ko
Application filed by Seoul Viosys Co Ltd filed Critical Seoul Viosys Co Ltd
Priority to CN202010064109.7A priority Critical patent/CN111223973B/zh
Publication of CN111223973A publication Critical patent/CN111223973A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
CN202010064109.7A 2012-09-07 2013-08-06 发光二极管阵列 Active CN111223973B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010064109.7A CN111223973B (zh) 2012-09-07 2013-08-06 发光二极管阵列

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
KR20120099263 2012-09-07
KR10-2012-0099263 2012-09-07
KR20120101716 2012-09-13
KR10-2012-0101716 2012-09-13
KR10-2013-0088714 2013-07-26
KR1020130088714A KR101893578B1 (ko) 2012-09-13 2013-07-26 웨이퍼 레벨의 발광 다이오드 어레이
KR10-2013-0088712 2013-07-26
KR1020130088712A KR101893579B1 (ko) 2012-09-07 2013-07-26 웨이퍼 레벨의 발광 다이오드 어레이
CN201380046853.2A CN104620399B (zh) 2012-09-07 2013-08-06 晶圆级发光二极管阵列
CN202010064109.7A CN111223973B (zh) 2012-09-07 2013-08-06 发光二极管阵列
PCT/KR2013/007105 WO2014038794A1 (ko) 2012-09-07 2013-08-06 웨이퍼 레벨의 발광 다이오드 어레이

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201380046853.2A Division CN104620399B (zh) 2012-09-07 2013-08-06 晶圆级发光二极管阵列

Publications (2)

Publication Number Publication Date
CN111223973A CN111223973A (zh) 2020-06-02
CN111223973B true CN111223973B (zh) 2023-08-22

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CN202010064109.7A Active CN111223973B (zh) 2012-09-07 2013-08-06 发光二极管阵列
CN201811346014.3A Active CN109638032B (zh) 2012-09-07 2013-08-06 发光二极管阵列

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US (1) US9412922B2 (enExample)
CN (3) CN104620399B (enExample)
DE (2) DE112013003887T5 (enExample)
IN (1) IN2015KN00387A (enExample)
TW (1) TWI602324B (enExample)
WO (1) WO2014038794A1 (enExample)

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Publication number Publication date
DE112013003887T5 (de) 2015-05-07
TW201414024A (zh) 2014-04-01
DE202013012470U1 (de) 2017-01-12
CN111223973A (zh) 2020-06-02
CN104620399B (zh) 2020-02-21
IN2015KN00387A (enExample) 2015-07-10
CN104620399A (zh) 2015-05-13
US9412922B2 (en) 2016-08-09
CN109638032A (zh) 2019-04-16
WO2014038794A1 (ko) 2014-03-13
US20150280086A1 (en) 2015-10-01
TWI602324B (zh) 2017-10-11
CN109638032B (zh) 2023-10-27

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