CN111095570B - 肖特基势垒二极管 - Google Patents

肖特基势垒二极管 Download PDF

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Publication number
CN111095570B
CN111095570B CN201880058896.5A CN201880058896A CN111095570B CN 111095570 B CN111095570 B CN 111095570B CN 201880058896 A CN201880058896 A CN 201880058896A CN 111095570 B CN111095570 B CN 111095570B
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CN
China
Prior art keywords
schottky barrier
barrier diode
anode electrode
drift layer
width
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CN201880058896.5A
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English (en)
Chinese (zh)
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CN111095570A (zh
Inventor
有马润
平林润
藤田实
川崎克己
井之口大辅
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TDK Corp
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TDK Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H10D8/605—Schottky-barrier diodes  of the trench conductor-insulator-semiconductor barrier type, e.g. trench MOS barrier Schottky rectifiers [TMBS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/875—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being semiconductor metal oxide, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions

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  • Electrodes Of Semiconductors (AREA)
CN201880058896.5A 2017-09-11 2018-08-30 肖特基势垒二极管 Active CN111095570B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017173804A JP7147141B2 (ja) 2017-09-11 2017-09-11 ショットキーバリアダイオード
JP2017-173804 2017-09-11
PCT/JP2018/032086 WO2019049764A1 (ja) 2017-09-11 2018-08-30 ショットキーバリアダイオード

Publications (2)

Publication Number Publication Date
CN111095570A CN111095570A (zh) 2020-05-01
CN111095570B true CN111095570B (zh) 2023-07-25

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CN201880058896.5A Active CN111095570B (zh) 2017-09-11 2018-08-30 肖特基势垒二极管

Country Status (5)

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US (1) US11699766B2 (enrdf_load_stackoverflow)
EP (1) EP3683847A4 (enrdf_load_stackoverflow)
JP (1) JP7147141B2 (enrdf_load_stackoverflow)
CN (1) CN111095570B (enrdf_load_stackoverflow)
WO (1) WO2019049764A1 (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11264373B2 (en) * 2019-12-21 2022-03-01 Intel Corporation Die backend diodes for electrostatic discharge (ESD) protection
US11424239B2 (en) 2019-12-21 2022-08-23 Intel Corporation Diodes for package substrate electrostatic discharge (ESD) protection
TW202315140A (zh) 2021-06-07 2023-04-01 日商Ｆｌｏｓｆｉａ股份有限公司 半導體裝置
TW202306179A (zh) 2021-06-07 2023-02-01 日商Ｆｌｏｓｆｉａ股份有限公司 半導體裝置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009105200A (ja) * 2007-10-23 2009-05-14 Hitachi Ltd ジャンクションバリアショットキーダイオード
JP2010147399A (ja) * 2008-12-22 2010-07-01 Shindengen Electric Mfg Co Ltd トレンチショットキバリアダイオード
JP2014078561A (ja) * 2012-10-09 2014-05-01 Rohm Co Ltd 窒化物半導体ショットキバリアダイオード
JP2014090140A (ja) * 2012-10-31 2014-05-15 Rohm Co Ltd 窒化物半導体ショットキバリアダイオード
JP2016081946A (ja) * 2014-10-09 2016-05-16 株式会社Flosfia 半導体構造および半導体装置
CN107026209A (zh) * 2017-04-20 2017-08-08 中国科学院微电子研究所 基于氧化镓的结势垒肖特基二极管及其制备方法

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4984345B2 (ja) 2000-06-21 2012-07-25 富士電機株式会社 半導体装置
JP3914785B2 (ja) * 2002-02-20 2007-05-16 新電元工業株式会社 ダイオード素子
JP2005243717A (ja) 2004-02-24 2005-09-08 Sanyo Electric Co Ltd 半導体装置
US9252251B2 (en) * 2006-08-03 2016-02-02 Infineon Technologies Austria Ag Semiconductor component with a space saving edge structure
US8344422B2 (en) * 2007-12-26 2013-01-01 Nec Corporation Semiconductor device
US8148749B2 (en) * 2009-02-19 2012-04-03 Fairchild Semiconductor Corporation Trench-shielded semiconductor device
US7989887B2 (en) 2009-11-20 2011-08-02 Force Mos Technology Co., Ltd. Trench MOSFET with trenched floating gates as termination
JP5531620B2 (ja) * 2010-01-05 2014-06-25 富士電機株式会社 半導体装置
JP2012023199A (ja) * 2010-07-14 2012-02-02 Rohm Co Ltd ショットキバリアダイオード
US9142623B2 (en) * 2011-09-08 2015-09-22 Tamura Corporation Substrate for epitaxial growth, and crystal laminate structure
US8809942B2 (en) 2011-09-21 2014-08-19 Kabushiki Kaisha Toshiba Semiconductor device having trench structure
US20130087852A1 (en) 2011-10-06 2013-04-11 Suku Kim Edge termination structure for power semiconductor devices
JP2013102081A (ja) 2011-11-09 2013-05-23 Tamura Seisakusho Co Ltd ショットキーバリアダイオード
JP5999678B2 (ja) 2011-12-28 2016-09-28 ローム株式会社 半導体装置および半導体装置の製造方法
US8884360B2 (en) 2012-02-24 2014-11-11 Infineon Technologies Austria Ag Semiconductor device with improved robustness
CN103579371A (zh) 2012-07-27 2014-02-12 朱江 一种沟槽终端结构肖特基器件及其制备方法
TWI469341B (zh) * 2012-12-20 2015-01-11 Ind Tech Res Inst 碳化矽溝槽式蕭基能障元件
JP2014127573A (ja) 2012-12-26 2014-07-07 Rohm Co Ltd 半導体装置
TW201442253A (zh) 2013-04-19 2014-11-01 Economic Semiconductor Corp 半導體裝置及其終端區結構
JPWO2015060441A1 (ja) * 2013-10-24 2017-03-09 ローム株式会社 半導体装置および半導体パッケージ
JP6296445B2 (ja) 2014-02-10 2018-03-20 ローム株式会社 ショットキーバリアダイオード
KR102018329B1 (ko) 2014-07-22 2019-09-04 가부시키가이샤 플로스피아 결정성 반도체막 및 판상체 및 반도체장치
JP6647621B2 (ja) 2015-02-25 2020-02-14 国立大学法人九州大学 不純物導入装置、不純物導入方法及び半導体素子の製造方法
JP2017045969A (ja) 2015-08-28 2017-03-02 株式会社タムラ製作所 ショットキーバリアダイオード
JP6662059B2 (ja) 2016-01-26 2020-03-11 豊田合成株式会社 半導体装置及び電力変換装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009105200A (ja) * 2007-10-23 2009-05-14 Hitachi Ltd ジャンクションバリアショットキーダイオード
JP2010147399A (ja) * 2008-12-22 2010-07-01 Shindengen Electric Mfg Co Ltd トレンチショットキバリアダイオード
JP2014078561A (ja) * 2012-10-09 2014-05-01 Rohm Co Ltd 窒化物半導体ショットキバリアダイオード
JP2014090140A (ja) * 2012-10-31 2014-05-15 Rohm Co Ltd 窒化物半導体ショットキバリアダイオード
JP2016081946A (ja) * 2014-10-09 2016-05-16 株式会社Flosfia 半導体構造および半導体装置
CN107026209A (zh) * 2017-04-20 2017-08-08 中国科学院微电子研究所 基于氧化镓的结势垒肖特基二极管及其制备方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Kohei Sasaki ; Daiki Wakimoto ; Quang Tu Thieu ; and etal..First Demonstration of Ga2O3 Trench MOS-Type Schottky Barrier Diodes.《IEEE Electron Device Letters》.2017,783-785. *

Also Published As

Publication number Publication date
JP7147141B2 (ja) 2022-10-05
EP3683847A1 (en) 2020-07-22
WO2019049764A1 (ja) 2019-03-14
JP2019050290A (ja) 2019-03-28
CN111095570A (zh) 2020-05-01
EP3683847A4 (en) 2021-06-09
US11699766B2 (en) 2023-07-11
US20200287060A1 (en) 2020-09-10

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