CN110890400B - 显示装置 - Google Patents

显示装置 Download PDF

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Publication number
CN110890400B
CN110890400B CN201910789135.3A CN201910789135A CN110890400B CN 110890400 B CN110890400 B CN 110890400B CN 201910789135 A CN201910789135 A CN 201910789135A CN 110890400 B CN110890400 B CN 110890400B
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display device
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CN110890400A (zh
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李台源
朴钟赞
严玹哲
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LG Display Co Ltd
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LG Display Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/871—Self-supporting sealing arrangements
    • H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H10D86/443—Interconnections, e.g. scanning lines adapted for preventing breakage, peeling or short circuiting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/871—Self-supporting sealing arrangements
    • H10K59/8723—Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Geometry (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
CN201910789135.3A 2018-09-11 2019-08-26 显示装置 Active CN110890400B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020180108411A KR102658427B1 (ko) 2018-09-11 2018-09-11 표시 장치
KR10-2018-0108411 2018-09-11

Publications (2)

Publication Number Publication Date
CN110890400A CN110890400A (zh) 2020-03-17
CN110890400B true CN110890400B (zh) 2023-09-08

Family

ID=69621431

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CN201910789135.3A Active CN110890400B (zh) 2018-09-11 2019-08-26 显示装置

Country Status (7)

Country Link
US (3) US10991782B2 (https=)
JP (4) JP7101149B2 (https=)
KR (1) KR102658427B1 (https=)
CN (1) CN110890400B (https=)
DE (1) DE102019120820B4 (https=)
GB (1) GB2578200B (https=)
TW (1) TWI712837B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11856811B2 (en) 2020-09-07 2023-12-26 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Top emitting AMOLED display panel, manufacturing method thereof, and display device

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021189488A1 (zh) * 2020-03-27 2021-09-30 京东方科技集团股份有限公司 显示面板和显示装置
US20230172035A1 (en) * 2020-05-18 2023-06-01 Sharp Kabushiki Kaisha Display device
CN112436036B (zh) * 2020-11-20 2023-06-30 合肥维信诺科技有限公司 显示基板、显示面板及显示装置
CN116762476A (zh) * 2021-02-03 2023-09-15 株式会社半导体能源研究所 显示装置的制造方法
KR20240038895A (ko) 2022-09-16 2024-03-26 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
KR20240106258A (ko) * 2022-12-29 2024-07-08 엘지디스플레이 주식회사 디스플레이 장치
TWI857663B (zh) * 2023-06-17 2024-10-01 友達光電股份有限公司 顯示面板
WO2025220174A1 (ja) * 2024-04-18 2025-10-23 シャープディスプレイテクノロジー株式会社 表示装置

Citations (4)

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Publication number Priority date Publication date Assignee Title
JP2000323715A (ja) * 1999-05-12 2000-11-24 Sony Corp 表示用薄膜半導体素子及び表示装置
EP2830095A2 (en) * 2013-07-24 2015-01-28 Samsung Display Co., Ltd. Organic light-emitting display apparatus and manufacturing method thereof
KR20180047607A (ko) * 2016-10-31 2018-05-10 엘지디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
CN108123062A (zh) * 2016-11-29 2018-06-05 乐金显示有限公司 有机发光显示装置

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KR100583311B1 (ko) 2003-10-14 2006-05-25 엘지.필립스 엘시디 주식회사 액정표시패널 및 그 제조 방법
KR101503122B1 (ko) 2012-09-26 2015-03-18 엘지디스플레이 주식회사 유기전계발광표시장치와 이의 제조방법
US9122116B2 (en) 2011-07-20 2015-09-01 Sharp Kabushiki Kaisha Active matrix substrate and display panel including the same
KR101971201B1 (ko) * 2012-08-20 2019-04-23 삼성디스플레이 주식회사 양면 표시 장치 및 이의 제작 방법
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KR102594921B1 (ko) 2016-10-31 2023-10-26 엘지디스플레이 주식회사 유기 발광 표시 장치
KR102731256B1 (ko) 2016-12-30 2024-11-19 엘지디스플레이 주식회사 표시장치와 그의 제조방법
KR102787595B1 (ko) * 2017-01-10 2025-04-01 삼성디스플레이 주식회사 표시 장치
JP6827332B2 (ja) * 2017-02-01 2021-02-10 株式会社ジャパンディスプレイ 表示装置
KR102126552B1 (ko) 2017-12-19 2020-06-24 엘지디스플레이 주식회사 표시 장치

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000323715A (ja) * 1999-05-12 2000-11-24 Sony Corp 表示用薄膜半導体素子及び表示装置
EP2830095A2 (en) * 2013-07-24 2015-01-28 Samsung Display Co., Ltd. Organic light-emitting display apparatus and manufacturing method thereof
KR20180047607A (ko) * 2016-10-31 2018-05-10 엘지디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
CN108123062A (zh) * 2016-11-29 2018-06-05 乐金显示有限公司 有机发光显示装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11856811B2 (en) 2020-09-07 2023-12-26 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Top emitting AMOLED display panel, manufacturing method thereof, and display device

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US11778860B2 (en) 2023-10-03
TWI712837B (zh) 2020-12-11
KR20200029861A (ko) 2020-03-19
JP7397900B2 (ja) 2023-12-13
GB201912006D0 (en) 2019-10-02
US20200083307A1 (en) 2020-03-12
US10991782B2 (en) 2021-04-27
DE102019120820A1 (de) 2020-03-12
TW202011092A (zh) 2020-03-16
JP2020043058A (ja) 2020-03-19
US20210225976A1 (en) 2021-07-22
JP2022084762A (ja) 2022-06-07
JP7101149B2 (ja) 2022-07-14
KR102658427B1 (ko) 2024-04-17
CN110890400A (zh) 2020-03-17
GB2578200B (en) 2021-11-03
JP2025106622A (ja) 2025-07-15
US20230354645A1 (en) 2023-11-02
JP2024023492A (ja) 2024-02-21
GB2578200A (en) 2020-04-22
JP7675158B2 (ja) 2025-05-12
US12414369B2 (en) 2025-09-09
DE102019120820B4 (de) 2023-10-12

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