JP2022084762A - 表示装置 - Google Patents
表示装置 Download PDFInfo
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- JP2022084762A JP2022084762A JP2022041474A JP2022041474A JP2022084762A JP 2022084762 A JP2022084762 A JP 2022084762A JP 2022041474 A JP2022041474 A JP 2022041474A JP 2022041474 A JP2022041474 A JP 2022041474A JP 2022084762 A JP2022084762 A JP 2022084762A
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Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
- H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
- H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/80—Constructional details
- H10K10/82—Electrodes
- H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
- H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Geometry (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Manufacturing & Machinery (AREA)
Abstract
Description
104 半導体層
106 ソース電極
108 ドレイン電極
122,124,162 信号リンク
130 発光素子
132 アノード電極
134 発光スタック
136 カソード電極
146,164,166 外郭カバー層
Claims (1)
- アクティブ領域及び非アクティブ領域を有する基板と、
前記基板のアクティブ領域上に配置される薄膜トランジスタと、
前記薄膜トランジスタの上部に配置される少なくとも2層の平坦化層と、
前記基板の非アクティブ領域上に配置される信号リンクと、
前記信号リンクの上部面及び側面と重なる第1外郭カバー層と、
を具備する表示装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2023203710A JP2024023492A (ja) | 2018-09-11 | 2023-12-01 | 表示装置 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2018-0108411 | 2018-09-11 | ||
KR1020180108411A KR102658427B1 (ko) | 2018-09-11 | 2018-09-11 | 표시 장치 |
JP2019149225A JP7101149B2 (ja) | 2018-09-11 | 2019-08-16 | 表示装置 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019149225A Division JP7101149B2 (ja) | 2018-09-11 | 2019-08-16 | 表示装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2023203710A Division JP2024023492A (ja) | 2018-09-11 | 2023-12-01 | 表示装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2022084762A true JP2022084762A (ja) | 2022-06-07 |
JP2022084762A5 JP2022084762A5 (ja) | 2022-08-25 |
JP7397900B2 JP7397900B2 (ja) | 2023-12-13 |
Family
ID=69621431
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019149225A Active JP7101149B2 (ja) | 2018-09-11 | 2019-08-16 | 表示装置 |
JP2022041474A Active JP7397900B2 (ja) | 2018-09-11 | 2022-03-16 | 表示装置 |
JP2023203710A Pending JP2024023492A (ja) | 2018-09-11 | 2023-12-01 | 表示装置 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019149225A Active JP7101149B2 (ja) | 2018-09-11 | 2019-08-16 | 表示装置 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2023203710A Pending JP2024023492A (ja) | 2018-09-11 | 2023-12-01 | 表示装置 |
Country Status (7)
Country | Link |
---|---|
US (3) | US10991782B2 (ja) |
JP (3) | JP7101149B2 (ja) |
KR (1) | KR102658427B1 (ja) |
CN (1) | CN110890400B (ja) |
DE (1) | DE102019120820B4 (ja) |
GB (1) | GB2578200B (ja) |
TW (1) | TWI712837B (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20230172035A1 (en) * | 2020-05-18 | 2023-06-01 | Sharp Kabushiki Kaisha | Display device |
CN111933681A (zh) * | 2020-09-07 | 2020-11-13 | 深圳市华星光电半导体显示技术有限公司 | 顶发光amoled显示面板、制作方法以及显示装置 |
CN112436036B (zh) * | 2020-11-20 | 2023-06-30 | 合肥维信诺科技有限公司 | 显示基板、显示面板及显示装置 |
KR20230141798A (ko) * | 2021-02-03 | 2023-10-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치의 제작 방법 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013011678A1 (ja) * | 2011-07-20 | 2013-01-24 | シャープ株式会社 | アクティブマトリクス基板及びそれを備えた表示パネル |
US20180033821A1 (en) * | 2016-07-29 | 2018-02-01 | Lg Display Co., Ltd. | Organic light emitting display device |
US20180122890A1 (en) * | 2016-10-31 | 2018-05-03 | Lg Display Co., Ltd. | Organic light emitting display device |
US20180151838A1 (en) * | 2016-11-29 | 2018-05-31 | Lg Display Co., Ltd. | Organic light-emitting display device |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4552239B2 (ja) * | 1999-05-12 | 2010-09-29 | ソニー株式会社 | 表示用薄膜半導体素子及び表示装置 |
KR101503122B1 (ko) | 2012-09-26 | 2015-03-18 | 엘지디스플레이 주식회사 | 유기전계발광표시장치와 이의 제조방법 |
KR101994227B1 (ko) * | 2012-12-07 | 2019-09-30 | 엘지디스플레이 주식회사 | 유기전계 발광소자 및 그 제조방법 |
KR102222680B1 (ko) * | 2013-02-01 | 2021-03-03 | 엘지디스플레이 주식회사 | 플렉서블 디스플레이 기판, 플렉서블 유기 발광 표시 장치 및 플렉서블 유기 발광 표시 장치 제조 방법 |
US9740035B2 (en) * | 2013-02-15 | 2017-08-22 | Lg Display Co., Ltd. | Flexible organic light emitting display device and method for manufacturing the same |
KR102066087B1 (ko) | 2013-05-28 | 2020-01-15 | 엘지디스플레이 주식회사 | 플렉서블 표시장치 및 그의 제조방법 |
US9614021B2 (en) * | 2013-07-24 | 2017-04-04 | Samsung Display Co., Ltd. | Organic light-emitting display apparatus and manufacturing method thereof |
KR102482986B1 (ko) * | 2014-12-29 | 2022-12-29 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 및 그의 제조 방법 |
US10032844B2 (en) | 2014-12-29 | 2018-07-24 | Lg Display Co., Ltd. | Organic light emitting display device and method of manufacturing the same |
KR102455318B1 (ko) | 2015-10-30 | 2022-10-18 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
KR102505879B1 (ko) * | 2016-03-24 | 2023-03-06 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
KR102571085B1 (ko) * | 2016-04-04 | 2023-08-28 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
KR102615113B1 (ko) * | 2016-05-10 | 2023-12-19 | 삼성디스플레이 주식회사 | 플렉서블 디스플레이 장치 |
KR101859484B1 (ko) * | 2016-05-30 | 2018-05-21 | 엘지디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
TWI582945B (zh) * | 2016-07-27 | 2017-05-11 | 友達光電股份有限公司 | 畫素結構及顯示面板 |
KR102671040B1 (ko) * | 2016-10-10 | 2024-06-03 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
KR101920770B1 (ko) * | 2016-10-31 | 2018-11-22 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
KR102126552B1 (ko) | 2017-12-19 | 2020-06-24 | 엘지디스플레이 주식회사 | 표시 장치 |
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2018
- 2018-09-11 KR KR1020180108411A patent/KR102658427B1/ko active IP Right Grant
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2019
- 2019-07-31 TW TW108127256A patent/TWI712837B/zh active
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013011678A1 (ja) * | 2011-07-20 | 2013-01-24 | シャープ株式会社 | アクティブマトリクス基板及びそれを備えた表示パネル |
US20180033821A1 (en) * | 2016-07-29 | 2018-02-01 | Lg Display Co., Ltd. | Organic light emitting display device |
US20180122890A1 (en) * | 2016-10-31 | 2018-05-03 | Lg Display Co., Ltd. | Organic light emitting display device |
US20180151838A1 (en) * | 2016-11-29 | 2018-05-31 | Lg Display Co., Ltd. | Organic light-emitting display device |
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GB201912006D0 (en) | 2019-10-02 |
TW202011092A (zh) | 2020-03-16 |
GB2578200A (en) | 2020-04-22 |
DE102019120820B4 (de) | 2023-10-12 |
CN110890400A (zh) | 2020-03-17 |
JP7101149B2 (ja) | 2022-07-14 |
KR102658427B1 (ko) | 2024-04-17 |
US11778860B2 (en) | 2023-10-03 |
TWI712837B (zh) | 2020-12-11 |
GB2578200B (en) | 2021-11-03 |
CN110890400B (zh) | 2023-09-08 |
US20210225976A1 (en) | 2021-07-22 |
US20230354645A1 (en) | 2023-11-02 |
US10991782B2 (en) | 2021-04-27 |
DE102019120820A1 (de) | 2020-03-12 |
JP2020043058A (ja) | 2020-03-19 |
US20200083307A1 (en) | 2020-03-12 |
KR20200029861A (ko) | 2020-03-19 |
JP2024023492A (ja) | 2024-02-21 |
JP7397900B2 (ja) | 2023-12-13 |
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