JP7397900B2 - 表示装置 - Google Patents
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- JP7397900B2 JP7397900B2 JP2022041474A JP2022041474A JP7397900B2 JP 7397900 B2 JP7397900 B2 JP 7397900B2 JP 2022041474 A JP2022041474 A JP 2022041474A JP 2022041474 A JP2022041474 A JP 2022041474A JP 7397900 B2 JP7397900 B2 JP 7397900B2
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
- H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
- H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/80—Constructional details
- H10K10/82—Electrodes
- H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
- H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
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- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
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- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Manufacturing & Machinery (AREA)
Description
104 半導体層
106 ソース電極
108 ドレイン電極
122,124,162 信号リンク
130 発光素子
132 アノード電極
134 発光スタック
136 カソード電極
146,164,166 外郭カバー層
Claims (9)
- アクティブ領域及び非アクティブ領域を有する基板と、
前記基板の前記アクティブ領域の薄膜トランジスタであって、
半導体層と、
ゲート絶縁膜を挟んで前記半導体層と重なるゲート電極と、
前記ゲート電極を覆う層間絶縁膜と、
前記層間絶縁膜上に形成され、前記ゲート絶縁膜および前記層間絶縁膜を通過するコンタクトホールを介して前記半導体層に接触するソース電極およびドレイン電極とを含む薄膜トランジスタと、
前記アクティブ領域の前記薄膜トランジスタを覆う保護膜と、
前記保護膜上に配置され、第1画素コンタクトホールを有する第1平坦化層と、
前記薄膜トランジスタの前記ドレイン電極に接続された画素連結電極と、
前記第1平坦化層上に配置され、第2画素コンタクトホールを有する第2平坦化層と、
前記薄膜トランジスタに接続された前記アクティブ領域の発光素子であって、
前記第2画素コンタクトホールを通して露出する前記画素連結電極に接続されたアノードと、
前記アノード上に形成された少なくとも1つの発光スタックと、
少なくとも1つの前記発光スタックを挟んで前記アノードと対向するように配置されたカソードとを含む発光素子と、
前記基板の前記非アクティブ領域上に配置される複数の信号リンクと、
前記第1平坦化層から分離し、有機絶縁物質で形成された第1外郭カバー層と、
前記第2平坦化層と同じ材料で形成された第2外郭カバー層と、
複数の前記信号リンクに接続された複数の導電パッドと
を備え、
複数の前記信号リンクが、
前記非アクティブ領域において前記複数の導電パッドのうちの少なくとも1つに電気的に接続された第1リンクと、
前記アクティブ領域の前記薄膜トランジスタの電極に電気的に接続された第1端部および前記非アクティブ領域の前記第1リンクに電気的に接続された第2端部を有する第2リンクとを備え、
前記第1外郭カバー層は、前記基板の平面視で前記第1リンクおよび前記第2リンクが重なる信号リンク領域の頂点及び1つまたは複数の側面を覆い、
前記第1外郭カバー層が、前記信号リンク領域において前記第1リンクおよび前記第2リンクの全体を覆う表示装置。 - 複数の前記導電パッドおよび前記発光素子の間に配置された少なくとも1つのダムとをさらに備え、
前記第1外郭カバー層および前記第2外郭カバー層は、少なくとも1つの前記ダムおよび前記非アクティブ領域における複数の前記導電パッドの間に配置される、請求項1に記載の表示装置。 - 前記第1外郭カバー層は、前記非アクティブ領域における前記保護膜上に配置された前記第1平坦化層と同じ材料で形成される、請求項1に記載の表示装置。
- 前記第1リンクは第1の幅を有し、
前記第2リンクは、前記第1リンクおよび前記第2リンクが重畳する前記信号リンク領域において前記第1の幅よりも大きい第2の幅を有し、
前記第1外郭カバー層は前記第2の幅よりも大きい第3の幅を有する、請求項1に記載の表示装置。 - 前記保護膜は前記第1リンク上に配置される、請求項1に記載の表示装置。
- 前記画素連結電極は、前記薄膜トランジスタの前記ドレイン電極と同じ低抵抗の材料で形成される、請求項1に記載の表示装置。
- 前記第2外郭カバー層は、前記第2平坦化層と同一平面上になるように、前記第2平坦化層と同じ材料で形成さる、請求項1に記載の表示装置。
- 前記第2平坦化層が前記画素連結電極および前記第1平坦化層を覆う、請求項1に記載の表示装置。
- 前記第2外郭カバー層の上面および側面を覆う第3外郭カバー層をさらに備え、
前記第3外郭カバー層は前記第2平坦化層と同じ材料で形成される、請求項1に記載の表示装置。
Priority Applications (1)
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JP2023203710A JP2024023492A (ja) | 2018-09-11 | 2023-12-01 | 表示装置 |
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KR10-2018-0108411 | 2018-09-11 | ||
KR1020180108411A KR102658427B1 (ko) | 2018-09-11 | 2018-09-11 | 표시 장치 |
JP2019149225A JP7101149B2 (ja) | 2018-09-11 | 2019-08-16 | 表示装置 |
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JP2019149225A Division JP7101149B2 (ja) | 2018-09-11 | 2019-08-16 | 表示装置 |
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JP2023203710A Division JP2024023492A (ja) | 2018-09-11 | 2023-12-01 | 表示装置 |
Publications (3)
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JP2022084762A JP2022084762A (ja) | 2022-06-07 |
JP2022084762A5 JP2022084762A5 (ja) | 2022-08-25 |
JP7397900B2 true JP7397900B2 (ja) | 2023-12-13 |
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JP2022041474A Active JP7397900B2 (ja) | 2018-09-11 | 2022-03-16 | 表示装置 |
JP2023203710A Pending JP2024023492A (ja) | 2018-09-11 | 2023-12-01 | 表示装置 |
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JP2023203710A Pending JP2024023492A (ja) | 2018-09-11 | 2023-12-01 | 表示装置 |
Country Status (7)
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US (3) | US10991782B2 (ja) |
JP (3) | JP7101149B2 (ja) |
KR (1) | KR102658427B1 (ja) |
CN (1) | CN110890400B (ja) |
DE (1) | DE102019120820B4 (ja) |
GB (1) | GB2578200B (ja) |
TW (1) | TWI712837B (ja) |
Families Citing this family (5)
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JP7548942B2 (ja) * | 2020-03-27 | 2024-09-10 | 京東方科技集團股▲ふん▼有限公司 | 表示パネル及び表示装置 |
US20230172035A1 (en) * | 2020-05-18 | 2023-06-01 | Sharp Kabushiki Kaisha | Display device |
CN111933681A (zh) | 2020-09-07 | 2020-11-13 | 深圳市华星光电半导体显示技术有限公司 | 顶发光amoled显示面板、制作方法以及显示装置 |
CN112436036B (zh) * | 2020-11-20 | 2023-06-30 | 合肥维信诺科技有限公司 | 显示基板、显示面板及显示装置 |
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US11778860B2 (en) | 2023-10-03 |
US20210225976A1 (en) | 2021-07-22 |
CN110890400A (zh) | 2020-03-17 |
KR102658427B1 (ko) | 2024-04-17 |
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GB2578200B (en) | 2021-11-03 |
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