CN110707008B - 半导体晶片的加工方法 - Google Patents

半导体晶片的加工方法 Download PDF

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Publication number
CN110707008B
CN110707008B CN201910564922.8A CN201910564922A CN110707008B CN 110707008 B CN110707008 B CN 110707008B CN 201910564922 A CN201910564922 A CN 201910564922A CN 110707008 B CN110707008 B CN 110707008B
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semiconductor wafer
layer
laser processing
processing groove
mask layer
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CN110707008A (zh
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若原匡俊
F·韦
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Disco Corp
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Disco Corp
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Abstract

提供半导体晶片的加工方法，在激光加工槽形成之后且在半导体晶片的分割之前，不追加掩模层形成工序而去除变质层和应变层。该半导体晶片的加工方法具有如下步骤：将半导体晶片、保护层以及功能层部分地去除而使半导体晶片露出，从而形成激光加工槽；利用掩模层将残留在激光加工槽以外的保护层中的除了金属电极上的区域以外的区域覆盖；第1蚀刻步骤,隔着掩模层而对保护层进行使用了第1气体的等离子蚀刻，使金属电极露出；第2蚀刻步骤,隔着第1蚀刻步骤后的掩模层而对激光加工槽进行使用了第2气体的等离子蚀刻，使激光加工槽扩展；以及分割步骤，沿着在第2蚀刻步骤中进行了扩展的激光加工槽将半导体晶片分割成器件芯片。

Description

半导体晶片的加工方法
技术领域
本发明涉及半导体晶片的加工方法，将半导体晶片沿着对多个半导体器件进行划分的分割预定线分割。
背景技术
通常半导体器件具有半导体晶片和形成于半导体晶片的正面上的功能层。该功能层包含：布线层；设置于布线层上的金属电极；以及在上下方向上分别夹着布线层和金属电极的层间绝缘膜。
近年来，使用低介电常数材料(所谓的Low-k材料)作为该层间绝缘膜的材料。通过使用Low-k材料，能够使半导体器件的处理速度高速化。
但是，Low-k材料是多孔质性材料，因此例如与硅的热氧化膜(SiO2)相比强度较低。因此，例如在使用切削刀具对半导体晶片进行切削而进行分割时，存在Low-k材料剥离的问题。
因此，存在如下的技术：代替使用切削刀具而进行的切削，通过激光烧蚀技术将包含Low-k材料的功能层部分地去除而形成激光加工槽，利用切削刀具对该激光加工槽的内侧进行切削而进行分割(例如参照专利文献1)。通过采用该技术，在半导体晶片的分割时，能够克服Low-k材料剥离的问题。
但是，由于当形成激光加工槽时所产生的热而在激光加工槽的周边的Low-k材料中形成有变质层，并且在激光加工槽的底部形成有具有μm级的裂纹的应变层。
变质层和应变层有可能给半导体器件的动作等带来不良影响，也有可能降低对半导体晶片进行分割而形成的器件芯片的抗弯强度。因此，期望将变质层和应变层从半导体晶片去除。
专利文献1：日本特开2009-21476号公报
通常，在使功能层所含的金属电极从层间绝缘膜露出的工序之后、或者形成与从层间绝缘膜露出的金属电极电连接的电极凸块等的工序之后，在功能层中形成激光加工槽。接着，为了对半导体晶片进行分割，利用切削刀具来切削位于激光加工槽的内侧的半导体晶片从而将半导体晶片分割。
在该情况下，考虑在激光加工槽形成之后且在半导体晶片的分割之前利用例如等离子蚀刻将变质层和应变层去除。但是，需要追加设置对不利用等离子蚀刻去除的区域进行包覆的掩模层(例如光致抗蚀层)的工序，因此产生追加的成本。
发明内容
本发明是鉴于该问题点而完成的，其目的在于提供半导体晶片的加工方法，在激光加工槽形成之后且在半导体晶片的分割之前不追加掩模层形成工序而将变质层和应变层去除。
根据本发明的一个方式，提供半导体晶片的加工方法，该半导体晶片的加工方法具有如下的步骤：器件形成步骤，形成多个半导体器件和分割预定线，该半导体器件具有功能层，该功能层包含布线层和位于该布线层的上方的金属电极并且该功能层形成在半导体晶片的正面上，该分割预定线位于该功能层上并且对多个该半导体器件进行划分；保护层包覆步骤，利用绝缘性的保护层包覆该功能层的正面，形成器件晶片；激光加工槽形成步骤，沿着该分割预定线照射对于该功能层和该半导体晶片具有吸收性的波长的激光束，将该半导体晶片、该保护层以及该功能层部分地去除而使该半导体晶片露出，从而形成激光加工槽；掩模层形成步骤，利用掩模层将残留在该激光加工槽以外的该保护层中的除了该金属电极上的区域以外的区域覆盖；第1蚀刻步骤，隔着该掩模层而对该保护层进行使用了第1气体的等离子蚀刻，使该金属电极露出；第2蚀刻步骤，隔着第1蚀刻步骤后的该掩模层而对该激光加工槽进行使用了第2气体的等离子蚀刻，将从该掩模层露出的该功能层和该半导体晶片的一部分去除而使该激光加工槽在宽度方向和深度方向上扩展；以及分割步骤，沿着通过该第2蚀刻步骤而进行了扩展的该激光加工槽将该半导体晶片分割成器件芯片。
优选该掩模层形成步骤中所形成的位于该激光加工槽的周边的该掩模层的该激光加工槽侧的缘部后退至比该激光加工槽的缘部靠外侧的位置，该激光加工槽的周边的该保护层的上部从该掩模层露出。
优选半导体晶片的加工方法还具有如下的步骤：水溶性树脂包覆步骤，在该保护层包覆步骤之后且在该激光加工槽形成步骤之前，利用水溶性树脂包覆该器件晶片的正面；以及清洗步骤，在该激光加工槽形成步骤之后且在该掩模层形成步骤之前，对该器件晶片进行清洗而将该水溶性树脂与该激光加工槽形成步骤中所产生的碎屑一起去除。
另外，优选该分割步骤是如下的切削步骤：利用切削刀具沿着在第2蚀刻步骤中进行了扩展的该激光加工槽对该半导体晶片进行切削。
另外，优选在该第2蚀刻步骤中进行了扩展的该激光加工槽从该半导体晶片的该正面起形成至超过该器件芯片的完工厚度的深度为止，在该分割步骤中，对该半导体晶片的位于与该正面相反的一侧的背面进行磨削而将该半导体晶片加工成完工厚度，并且沿着在该第2蚀刻步骤中进行了扩展的该激光加工槽对该半导体晶片进行分割。
另外，优选该半导体晶片的加工方法还具有如下的凸块形成步骤：在通过该第1蚀刻步骤而露出的该金属电极上形成凸块。
在本发明的半导体晶片的加工方法中，在激光加工槽形成步骤之后的掩模层形成步骤中，利用掩模层将除了金属电极上的区域和激光加工槽上的区域以外的区域覆盖。并且，在第1蚀刻步骤中隔着该掩模层而对保护层进行等离子蚀刻，将保护层去除而使金属电极露出。
另外，隔着在金属电极的露出中所使用的掩模层而进行第2蚀刻步骤，从而在激光加工槽形成步骤中所形成的激光加工槽的内侧将各个露出的功能层和半导体晶片的一部分去除。
这样，能够利用此前在金属电极的露出中所使用的掩模层而将层间绝缘膜的变质层和半导体晶片的应变层去除，因此在激光加工槽形成之后且在半导体晶片的分割之前，不追加掩模层形成工序而能够将变质层和应变层去除。
附图说明
图1的(A)是半导体晶片和功能层的剖视图，示出器件形成步骤(S10)，图1的(B)是器件晶片的剖视图，示出保护层包覆步骤(S20)。
图2是器件晶片的立体图。
图3是已通过水溶性树脂包覆步骤(S30)设置了水溶性树脂的器件晶片的剖视图。
图4是器件晶片的剖视图，示出激光加工槽形成步骤(S40)。
图5是已通过清洗步骤(S50)去除了水溶性树脂的器件晶片的剖视图。
图6是已通过掩模层形成步骤(S60)设置了掩模层的器件晶片的剖视图。
图7是器件晶片的剖视图，示出第1蚀刻步骤(S70)。
图8是器件晶片的剖视图，示出第2蚀刻步骤的前半部分(S80-1)。
图9是器件晶片的剖视图，示出第2蚀刻步骤的后半部分(S80-2)。
图10是器件晶片的剖视图，示出凸块形成步骤(S90)。
图11的(A)是器件晶片的剖视图，示出分割步骤(S100)，图11的(B)是分割后的器件晶片的剖视图。
图12是由器件晶片、支承带以及框架构成的晶片单元的立体图。
图13是第1实施方式的加工方法的流程图。
图14是器件晶片的剖视图，示出第2实施方式的第2蚀刻步骤的后半部分(S80-2)。
图15是示出第2实施方式的分割步骤(S100)的局部剖视侧视图。
标号说明
11：半导体晶片；11a：正面；11b：背面；11c：应变层；11d：去除区域；11e：切削槽；13：功能层；13a：第1绝缘膜；13b：第2绝缘膜；13c：第3绝缘膜；13d：第4绝缘膜；13e：布线层；13f：导通孔；13g：金属电极；13h：开口；13i：正面；13j：变质层；13k：去除区域；15：半导体器件；17：分割预定线(间隔道)；19：保护层；19A：缘部；19B：上部；19a、19b：去除区域；21：器件晶片；21a：正面；21b：器件芯片；23：水溶性树脂；25：激光加工槽；25a：第1扩展槽；25b：第2扩展槽；27a：支承带(划片带)；27b：框架；29：晶片单元；30：掩模层；30a、30b：开口；32：基底金属层；34：凸块；40：切削刀具；50：磨削装置；52：卡盘工作台；52a：保持面；54：主轴；56：磨轮安装座；58：磨削磨轮；58a：环状基台；58b：磨削磨具；L：激光束；P1、P2、P3：等离子；A：完工厚度。
具体实施方式
使用图1的(A)至图12，对第1实施方式的半导体晶片11的加工方法进行说明。另外，图13是第1实施方式的加工方法的流程图。
图1的(A)是示出器件形成步骤(S10)的半导体晶片11和功能层13的剖视图。使用图1的(A)，对半导体晶片11和功能层13的构造进行说明。
半导体晶片11由硅等半导体材料构成，形成为从正面11a至位于与正面11a相反的一侧的背面11b的厚度为500μm至1000μm左右的圆盘状。在半导体晶片11的正面11a侧设置有IC(Integrated Circuit：集成电路)、LSI(large-scale integrated circuit：大规模集成电路)等功能元件(未图示)。
另外，对于半导体晶片11的材质、形状、构造、大小等没有限制。例如也可以代替半导体晶片11而使用硅以外的砷化镓(GaAs)、碳化硅(SiC)等其他半导体基板等。同样地，对于功能元件的种类、数量、形状、构造、大小、配置等也没有限制。
在半导体晶片11的正面11a上形成有包含第1绝缘膜13a的功能层13。第1绝缘膜13a与半导体晶片11的正面11a接触而设置。
本实施方式的第1绝缘膜13a是低介电常数绝缘体膜(所谓的Low-k膜)，其包含含碳的氧化硅系膜(SiOCH系膜)等氧化膜以及含氟的氧化硅(SiOF)、含硼的氧化硅(SiOB)等无机系的膜、或聚酰亚胺系、聚对二甲苯系等有机系的膜。
无机系的Low-k膜例如通过等离子CVD法(plasma-enhanced chemicalvapordeposition)形成。另外，有机系的Low-k膜例如通过使用旋涂机的涂布法形成。
另外，在第1绝缘膜13a中经由光刻工序和蚀刻工序而形成有从第1绝缘膜13a的上表面贯通至下表面的多个贯通孔(未图示)。
在第1绝缘膜13a上设置有与第1绝缘膜13a接触的布线层13e。布线层13e例如是经由溅射工序而形成的铜(Cu)或铝(Al)等的金属层。另外，通过形成布线层13e的工序而在第1绝缘膜13a的贯通孔中形成导通孔(未图示)。布线层13e通过该导通孔而与半导体晶片11的正面11a连接。
在与布线层13e相同的高度位置设置有与第1绝缘膜13a接触的第2绝缘膜13b。第2绝缘膜13b是与第1绝缘膜13a同样地形成的Low-k膜，例如将处于相同高度位置的多个布线层13e彼此电分离。
在第2绝缘膜13b和布线层13e上设置有第3绝缘膜13c。第3绝缘膜13c是与第1绝缘膜13a同样地形成的Low-k膜，具有从第3绝缘膜13c的上表面贯通至下表面的多个贯通孔。
在与第3绝缘膜13c相同的高度位置设置有多个与布线层13e接触的导通孔13f。导通孔13f通过形成后述的金属电极13g的工序而形成于第3绝缘膜13c的贯通孔中。多个导通孔13f分别与布线层13e连接。
在导通孔13f的上方设置有与导通孔13f接触的金属电极13g。金属电极13g是与布线层13e同样地形成的电极。金属电极13g与设置在第3绝缘膜13c的贯通孔中的导通孔13f连接。因此，位于布线层13e上的金属电极13g经由导通孔13f、布线层13e等而与设置在半导体晶片11的正面11a侧的功能元件电连接。
在金属电极13g和第3绝缘膜13c上设置有与金属电极13g和第3绝缘膜13c接触的第4绝缘膜13d。第4绝缘膜13d具有使金属电极13g部分地露出到外部的开口13h。第4绝缘膜13d是与第1绝缘膜13a同样地形成的Low-k膜。
通过如上述那样形成的包含功能层13和半导体晶片11的层叠体而构成多个半导体器件15。本实施方式的半导体器件15相当于形成有半导体晶片11、功能层13以及规定的功能元件的区域。
各半导体器件15在与半导体晶片11的厚度方向垂直的平面方向上按照规定的距离分开而配置。半导体器件15例如形成为俯视时大致矩形形状(参照图2)，该半导体器件15的端部位于比金属电极13g的外侧的端部更靠外侧的位置。
在相邻的两个半导体器件15之间设置有对半导体器件15彼此的边界进行划分的分割预定线17(间隔道)。分割预定线17位于功能层13上，在与半导体晶片11的厚度方向垂直的方向上具有规定的宽度。
如图1的(A)所示，本实施方式的分割预定线17上的功能层13未包含布线层13e、导通孔13f以及金属电极13g，但分割预定线17上的功能层13可以包含被称为TEG(TestElement Group：测试元件组)的测试电路。
对器件形成步骤(S10)的概要进行说明，首先在半导体晶片11上形成第1绝缘膜13a，在第1绝缘膜13a上形成贯通孔。接着，在第1绝缘膜13a上形成布线层13e，并在第1绝缘膜13a中的贯通孔中形成导通孔。然后，形成第2绝缘膜13b。
接着，形成第3绝缘膜13c，在第3绝缘膜13c上形成贯通孔。然后，在第3绝缘膜13c上形成金属电极13g，并且在第3绝缘膜13c中的贯通孔中形成导通孔13f。另外，金属电极13g和导通孔13f可以利用不同的工艺形成。然后，形成第4绝缘膜13d，在第4绝缘膜13d上形成开口13h。
在本实施方式中，在器件形成步骤(S10)之后，利用绝缘性的保护层19对功能层13的正面13i(即，第4绝缘膜13d的正面)进行包覆。由此，形成器件晶片21。另外，在本实施方式中，将半导体晶片11、功能层13以及保护层19的层叠体称作器件晶片21。
图1的(B)是示出保护层包覆步骤(S20)的器件晶片21的剖视图。本实施方式的保护层19由聚酰亚胺构成，但保护层19的材料不限于聚酰亚胺，也可以是聚酰胺、聚酰亚胺酰胺等其他钝化材料。
在保护层包覆步骤(S20)中，使用旋涂机在第4绝缘膜13d和金属电极13g上涂布聚酰亚胺材料，然后对聚酰亚胺材料进行烧结，从而形成保护层19。将保护层包覆步骤(S20)后的器件晶片21的整体图像示于图2。
图2是器件晶片21的立体图。图2中的I-I剖面对应于图1的(B)所示的器件晶片21的剖视图。另外，图1的(B)所示的保护层19的表面相当于器件晶片21的正面21a。
在本实施方式中，在保护层包覆步骤(S20)之后，使用水溶性树脂涂布清洗装置(未图示)，利用水溶性树脂23对器件晶片21的正面21a进行包覆(水溶性树脂包覆步骤(S30))。图3是利用水溶性树脂包覆步骤(S30)设置了水溶性树脂23的器件晶片21的剖视图。
在水溶性树脂包覆步骤(S30)中，使器件晶片21的背面11b侧吸附于旋转工作台(未图示)的保持面上，使旋转工作台按照例如2000rpm进行旋转。
并且，将水溶性树脂23旋涂于旋转的器件晶片21的整个正面21a上。水溶性树脂例如是PVA(聚乙烯醇)、PEG(聚乙二醇)、PEO(氧化聚乙烯)等树脂。
在水溶性树脂包覆步骤(S30)之后，进行沿着分割预定线17照射激光束L的激光加工槽形成步骤(S40)。图4是示出激光加工槽形成步骤(S40)的器件晶片21的剖视图。
在图4中，在保护层19、功能层13以及半导体晶片11中用虚线示出要形成激光加工槽25的范围。另外，当照射激光束L时，在位于激光加工槽25的周围的功能层13中形成有变质层13j，并且在激光加工槽25的底部形成有应变层11c。在图4中，用虚线示出变质层13j和应变层11c。
在激光加工槽形成步骤(S40)中，沿着器件晶片21的分割预定线17照射对于半导体晶片11和功能层13具有吸收性的波长的激光束L。激光束L例如是具有紫外线的波长的脉冲激光。
在激光加工槽形成步骤(S40)中，通过烧蚀将位于各个分割预定线17的保护层19、功能层13以及半导体晶片11的正面11a侧部分地去除而使半导体晶片11露出。由此，沿着分割预定线17形成激光加工槽25。
被烧蚀的半导体晶片11、功能层13以及保护层19通常会成为碎屑而飞散至周围。但是，在本实施方式中，在半导体晶片11、功能层13以及保护层19上设置有水溶性树脂23，因此碎屑飞散至水溶性树脂23上，从而能够防止碎屑附着于半导体晶片的保护层19上。另外，能够利用后述的清洗步骤(S50)将所产生的碎屑与水溶性树脂23一起去除。
在激光加工槽形成步骤(S40)之后，进行清洗步骤(S50)，对器件晶片21进行清洗而将水溶性树脂23与在激光加工槽形成步骤(S40)中所产生的碎屑一起去除。
图5是利用清洗步骤(S50)将水溶性树脂23去除后的器件晶片21的剖视图。在清洗步骤(S50)中，使器件晶片21的背面11b侧吸附于旋转工作台(未图示)的保持面上，使旋转工作台进行旋转。
并且，对旋转的器件晶片21吹送清洗液(例如纯水)。由此，能够将器件晶片21上的水溶性树脂23去除。另外，能够将通过激光束L的照射所产生的碎屑与水溶性树脂23一起去除。
另外，在本实施方式中，执行了水溶性树脂包覆步骤(S30)和清洗步骤(S50)，但如果不必谋求水溶性树脂23所实现的碎屑飞散防止以及碎屑去除的效果，则可以省略水溶性树脂包覆步骤(S30)和清洗步骤(S50)。
在清洗步骤(S50)之后，在保护层19上形成掩模层30(掩模层形成步骤(S60))。
图6是利用掩模层形成步骤(S60)形成了掩模层30的器件晶片21的剖视图。掩模层30例如是在光刻工序中使用的光致抗蚀层。
掩模层30具有多个开口。如图6所示，本实施方式的掩模层30在金属电极13g的上方具有比金属电极13g的宽度小的开口30a。另外，掩模层30在激光加工槽25的上方具有比激光加工槽25的宽度大的开口30b。
通过掩模层形成步骤(S60)而形成的掩模层30中的位于激光加工槽25的周边的掩模层30后退至比保护层19的缘部19A靠外侧的位置。另外，保护层19的缘部19A相当于激光加工槽25的缘部。
即，在本实施方式中，激光加工槽25的周边的保护层19的上部19B从掩模层30露出。这样，掩模层30的开口30b的宽度设定得比激光加工槽25的宽度宽，因此容易在后述的蚀刻步骤中将激光加工槽25的底部的应变层11c以及功能层13的变质层13j去除。
特别是，在激光加工槽25的深度方向和宽度方向上能够宽范围地对半导体晶片11进行蚀刻，因此能够将激光加工槽25的底部附近的半导体晶片11的应变层11c完全去除。由此，能够提高后述的分割步骤(S100)后的器件芯片的抗弯强度。
在掩模层形成步骤(S60)中，首先通过使用旋涂机的涂布法，在器件晶片21上的整体上形成正性的光致抗蚀层。然后，使用光掩模对光致抗蚀层进行曝光，以适当的温度对曝光后的光致抗蚀层进行烘烤。
接着，对烘烤后的光致抗蚀层进行显影而去除已感光的区域。由此，形成光致抗蚀层(即，掩模层30)，其将残留于激光加工槽25以外的保护层19中的除了功能层13的金属电极13g上的局部区域以外的区域覆盖。此时，将激光加工槽25周边的掩模层30去除而使保护层19的缘部19A附近的上部19B从掩模层30露出。
在掩模层形成步骤(S60)之后，隔着掩模层30而进行等离子蚀刻，将保护层19部分地去除。由此，使功能层13的金属电极13g从保护层19露出。图7是示出第1蚀刻步骤(S70)的器件晶片21的剖视图。另外，在图7中，示意性示出所产生的等离子P1。
在本实施方式中，隔着上述掩模层30而对保护层19进行使用第1气体的等离子蚀刻。第1气体例如是氧气(O2气体)。通过等离子化学反应将氧分子的原子间键合切断，从而生成富有反应性且寿命短的中间体即自由基的原子态氧。
自由基的原子态氧与有机系的保护层19反应，从而保护层19成为水和二氧化碳的气体，释放至外部。由此，在掩模层30的开口30a的正下方分别形成有保护层19的去除区域19a(即，开口)。另外，去除区域19a的侧面成为锥面形状。
另外，将位于掩模层30的开口30b的正下方的激光加工槽25的周围的保护层19去除。在图7中，用虚线示出在开口30b的正下方被去除的保护层19的去除区域19b。另外，去除区域19b的侧面也成为锥面形状。
接着，隔着第1蚀刻步骤(S70)后的掩模层30而进行第2蚀刻步骤(S80-1和S80-2)。由此，将形成于功能层13的变质层13j以及形成于半导体晶片11的应变层11c去除。
在本实施方式中，利用第2蚀刻步骤的前半部分(S80-1)将功能层13中的变质层13j去除。图8是示出第2蚀刻步骤的前半部分(S80-1)的器件晶片21的剖视图。另外，在图8中，示意性示出所产生的等离子P2。
在前半部分(S80-1)，将在激光加工槽25的内侧露出的功能层13的侧部所形成的变质层13j去除，从而形成去除区域13k，将激光加工槽25在宽度方向上扩展而形成第1扩展槽25a。在本实施方式的第1扩展槽25a中，第1绝缘膜13a至第4绝缘膜13d这四个Low-k膜在功能层13的侧部露出。
在功能层13中的四个Low-k膜是含碳的氧化硅系膜(SiOCH系膜)等氧化膜的情况下，例如使用含有全氟环丁烷(C4F8)或六氟化硫(SF6)的气体，对Low-k膜进行等离子蚀刻。
与此相对，在功能层13中的Low-k膜是有机系的膜的情况下，例如使用含有氢(H2)和氮(N2)的气体，对Low-k膜进行等离子蚀刻。
在本实施方式中，在利用第2蚀刻步骤的前半部分(S80-1)将功能层13的变质层13j去除之后，利用第2蚀刻步骤的后半部分(S80-2)将形成于半导体晶片11的应变层11c去除。
图9是示出第2蚀刻步骤的后半部分(S80-2)的器件晶片21的剖视图。另外，在图9中，示意性示出所产生的等离子P3。在后半部分(S80-2)，将在激光加工槽25的内侧露出的半导体晶片11的上部(即，与激光加工槽25的底部相对应的半导体晶片11的正面侧部分)的应变层11c去除，从而形成去除区域11d。由此，将激光加工槽25在深度方向和宽度方向上扩展而形成第2扩展槽25b。
本实施方式的半导体晶片11由硅构成，因此例如使用含有全氟环丁烷(C4F8)或六氟化硫(SF6)的气体，对半导体晶片11进行等离子蚀刻。
关于在第2蚀刻步骤的前半部分(S80-1)和后半部分(S80-2)所使用的混合气体，存在各种组合。例如在Low-k膜是含碳的氧化硅系膜(SiOCH系膜)的情况下，在前半部分(S80-1)和后半部分(S80-2)使用相同的气体。另外，在Low-k膜是有机系的膜的情况下，在前半部分(S80-1)和后半部分(S80-2)使用不同的气体。
另外，通常在第2蚀刻步骤(S80-1和S80-2)中，使用与在第1蚀刻步骤(S70)中所用的第1气体不同的第2气体。不过，可以使将保护层19去除的第1蚀刻步骤(S70)的第1气体与将功能层13的Low-k膜去除的第2蚀刻步骤的前半部分(S80-1)的第2气体为相同的气体。
在前半部分(S80-1)和后半部分(S80-2)，隔着此前在保护层19的去除(S70)中所使用的掩模层30而进行等离子蚀刻。因此，在激光加工槽形成步骤(S40)之后且在后述的半导体晶片11的分割步骤(S100)之前，不追加掩模层形成工序而能够将变质层13j和应变层11c去除。
如上所述，在掩模层形成步骤(S60)中，使位于激光加工槽25的周边的掩模层30后退至比保护层19的缘部19A靠外侧的位置。因此，在后半部分(S80-2)，与掩模层30未后退至比保护层19的缘部19A靠外侧的位置的情况相比，能够在激光加工槽25的深度方向和宽度方向上以更宽的范围将半导体晶片11的应变层11c去除。
在利用第2蚀刻步骤(S80-1和S80-2)将变质层13j和应变层11c去除之后，将掩模层30去除。接着，在功能层13的金属电极13g上形成凸块34。图10是示出凸块形成步骤(S90)的器件晶片21的剖视图。
在本实施方式中，隔着保护层19的去除区域19a而设置与金属电极13g接触的基底金属层32。基底金属层32例如是具有金属层叠构造的层，其包含与金属电极13g连接的镍(Ni)层、位于镍层上的钯(Pd)层以及位于钯层上的金(Au)层。
另外，在基底金属层32上设置有金属的凸块34。凸块34例如是由金形成的金凸块，但也可以使用银(Ag)、铜、镍或焊料(包含锡(Sn)等的合金)。
在凸块形成步骤(S90)中，首先通过镀覆(Plating)形成基底金属层32。例如通过镀覆依次形成镍层、钯层以及金层。
另外，基底金属层32也可以按照如下的方式形成：在通过溅射(Sputtering)在保护层19上的整体上形成具有上述金属层叠构造的层之后，经光刻工序对具有金属层叠构造的层进行适当地图案化而按照残留在去除区域19a内和去除区域19a的周边的方式形成该基底金属层32。
接着，通过镀覆而在基底金属层32上形成凸块34。然后，对凸块34进行加热，从而使凸块34回流(Reflow)。由此，如图10所示，凸块34成为大致球形。
在凸块形成步骤(S90)之后，沿着在第2蚀刻步骤(S80-1和S80-2)中进行了扩展的激光加工槽25，将半导体晶片11分割成多个器件芯片21b。
图11的(A)是示出分割步骤(S100)的器件晶片21的剖视图，图11的(B)是分割后的器件晶片21的剖视图。另外，图12是由器件晶片21、支承带27a以及框架27b构成的晶片单元29的立体图。
支承带27a由树脂等形成，呈俯视大致圆形状。支承带27a例如具有基材层以及设置于该基材层上的整个面的粘接层。粘接层例如是紫外线硬化型的树脂层。
如图12所示，在支承带27a的粘接层的外周部分粘贴有由金属形成的环状的框架27b。支承带27a具有比框架27b的开口大的直径。支承带27a的粘接层在框架27b的开口露出。
本实施方式的分割步骤(S100)是利用切削刀具40对半导体晶片11进行切削的切削步骤，该切削刀具40是将由金刚石等形成的磨粒用由金属等形成的结合材料结合而形成的。
在分割步骤(S100)中，首先将半导体晶片11的背面11b粘贴于支承带(划片带)27a的开口(参照图12)。然后，一边使高速旋转的环状的切削刀具40切入至半导体晶片11，一边使切削刀具40和半导体晶片11沿着已扩展的激光加工槽25(即，第2扩展槽25b)相对地移动。
由此，如图11的(B)所示，利用切削刀具40对半导体晶片11进行切削而在半导体晶片11上形成切削槽11e。切削槽11e沿着半导体晶片11的分割预定线17而设置。
在本实施方式中，利用掩模层形成步骤(S60)，与掩模层30未后退至比保护层19的缘部19A靠外侧的位置的情况相比，能够将半导体晶片11的应变层11c更完全地去除。因此，能够提高器件芯片21b的抗弯强度。
接着，对第2实施方式进行说明，在该第2实施方式中利用第2蚀刻步骤的后半部分(S80-2)按照比第1实施方式更深的方式对激光加工槽25进行等离子蚀刻。图14是示出第2实施方式的第2蚀刻步骤的后半部分(S80-2)的器件晶片的剖视图。
在第2实施方式的第2蚀刻步骤的后半部分(S80-2)中，激光加工槽25从半导体晶片11的正面11a起形成至超过器件芯片21b的完工厚度A并且未达到半导体晶片11的背面11b的深度为止。
完工厚度A是指利用分割步骤(S100)分割后的器件芯片21b中的半导体晶片11的厚度。本实施方式的完工厚度A大于应变层11c的深度，小于分割步骤(S100)前的半导体晶片11的厚度。
在第2实施方式的后半部分(S80-2)，例如实施使全氟环丁烷(C4F8)或六氟化硫(SF6)的浓度较高、使投入电力较多、使等离子蚀刻时间较长等的一个以上的处理，从而与第1实施方式的后半部分(S80-2)相比，更深地蚀刻半导体晶片11。由此，使激光加工槽25在深度方向上扩展而形成深度超过完工厚度A的第2扩展槽25b。
然后，对半导体晶片11的背面11b进行磨削而将半导体晶片11加工成完工厚度，并且沿着在第2蚀刻步骤(S80-1和S80-2)中进行了扩展的激光加工槽25(即，第2扩展槽25b)对半导体晶片11进行分割。
图15是示出第2实施方式的分割步骤(S100)的局部剖视侧视图。在第2实施方式中，使用磨削装置50对半导体晶片11进行磨削。首先，使用图15对磨削装置50的构造进行说明。
磨削装置50具有对圆盘状的半导体晶片11进行吸引保持的卡盘工作台52。该卡盘工作台52与电动机等旋转机构(未图示)连结，绕与Z轴方向大致平行的旋转轴旋转。
卡盘工作台52的上表面成为对半导体晶片11的正面11a侧进行吸引保持的保持面52a。在保持面52a上通过形成于卡盘工作台52的内部的流路而作用吸引源的负压，产生对半导体晶片11的正面11a侧进行吸引的吸引力。
如上所述，半导体晶片11是背面11b侧粘贴于比框架27b的开口靠内侧的支承带27a的开口的状态(参照图12)，在图15中省略了框架27b。
按照与卡盘工作台52所保持的半导体晶片11的背面11b侧对置的方式，将磨削机构配置在卡盘工作台52的上方。磨削机构具有绕与Z轴方向大致平行的旋转轴旋转的主轴54。该主轴54利用升降机构(未图示)进行升降。在主轴54的下端侧固定有圆盘状的磨轮安装座56。
在磨轮安装座56的下表面上安装有直径与磨轮安装座56大致相同的磨削磨轮58。磨削磨轮58具有由铝或不锈钢等金属材料形成的环状的磨轮基台(环状基台)58a。
磨轮基台58a的上表面侧固定于磨轮安装座56，从而将磨轮基台58a安装于主轴54。另外，在磨轮基台58a的下表面上设置有多个磨削磨具(磨具芯片)58b。
各个磨削磨具24具有大致长方体形状，在磨轮基台58a的环状的下表面的整个圆周上，按照在相邻的磨削磨具24彼此之间设置间隙的方式呈环状排列。
磨削磨具例如是在金属、陶瓷、树脂等结合材料中混合金刚石、cBN(cubicboronnitride：立方氮化硼)等磨粒而形成的。不过，对于结合材料或磨粒没有限制，可以根据磨削磨具的规格适当选择。
在第2实施方式的分割步骤(S100)中，利用磨削装置50对半导体晶片11进行磨削。更具体而言，一边使卡盘工作台52和主轴54分别向规定的方向旋转，一边使主轴54下降而将磨削磨具58b按压至半导体晶片11的背面11b侧。由此，将半导体晶片11磨削加工成完工厚度。
当将半导体晶片11加工成完工厚度时，沿着分割预定线17将器件芯片21b彼此分离。另外，为了容易拾取分离后的器件芯片21b，可以通过扩展装置对支承带27a进行扩展而将相邻的器件芯片21b之间的距离扩展。
除此之外，上述实施方式的构造、方法等只要不脱离本发明的目的的范围，则可以适当变更并实施。例如在第2实施方式的变形例中的第2蚀刻步骤的后半部分(S80-2)，可以超过完工厚度A而进一步进行蚀刻，对半导体晶片11进行分割。即，在第2实施方式的变形例中，可以通过后半部分(S80-2)的蚀刻对半导体晶片11进行分割。

Claims (6)

1.一种半导体晶片的加工方法，其特征在于，
该半导体晶片的加工方法具有如下的步骤：
器件形成步骤，形成多个半导体器件和分割预定线，该半导体器件具有功能层，该功能层包含布线层和位于该布线层的上方的金属电极并且该功能层形成在半导体晶片的正面上，该分割预定线位于该功能层上并且对多个该半导体器件进行划分；
保护层包覆步骤，利用绝缘性的保护层包覆该功能层的正面，形成器件晶片；
激光加工槽形成步骤，沿着该分割预定线照射对于该功能层和该半导体晶片具有吸收性的波长的激光束，将该半导体晶片、该保护层以及该功能层部分地去除而使该半导体晶片露出，从而形成激光加工槽；
掩模层形成步骤，利用掩模层将残留在该激光加工槽以外的该保护层中的除了该金属电极上的区域以外的区域覆盖；
第1蚀刻步骤，隔着该掩模层而对该保护层进行使用了第1气体的等离子蚀刻，使该金属电极露出；
第2蚀刻步骤，隔着第1蚀刻步骤后的该掩模层而对该激光加工槽进行使用了第2气体的等离子蚀刻，将从该掩模层露出的该功能层和该半导体晶片的一部分去除而使该激光加工槽在宽度方向和深度方向上扩展；以及
分割步骤，沿着通过该第2蚀刻步骤而进行了扩展的该激光加工槽将该半导体晶片分割成器件芯片。
2.根据权利要求1所述的半导体晶片的加工方法，其特征在于，
该掩模层形成步骤中所形成的位于该激光加工槽的周边的该掩模层的该激光加工槽侧的缘部后退至比该激光加工槽的缘部靠外侧的位置，
该激光加工槽的周边的该保护层的上部从该掩模层露出。
3.根据权利要求1或2所述的半导体晶片的加工方法，其特征在于，
该半导体晶片的加工方法还具有如下的步骤：
水溶性树脂包覆步骤，在该保护层包覆步骤之后且在该激光加工槽形成步骤之前，利用水溶性树脂包覆该器件晶片的正面；以及
清洗步骤，在该激光加工槽形成步骤之后且在该掩模层形成步骤之前，对该器件晶片进行清洗而将该水溶性树脂与该激光加工槽形成步骤中所产生的碎屑一起去除。
4.根据权利要求1至3中的任意一项所述的半导体晶片的加工方法，其特征在于，
该分割步骤是如下的切削步骤：利用切削刀具沿着在第2蚀刻步骤中进行了扩展的该激光加工槽对该半导体晶片进行切削。
5.根据权利要求1至3中的任意一项所述的半导体晶片的加工方法，其特征在于，
在该第2蚀刻步骤中进行了扩展的该激光加工槽从该半导体晶片的该正面起形成至超过该器件芯片的完工厚度的深度为止，
在该分割步骤中，对该半导体晶片的位于与该正面相反的一侧的背面进行磨削而将该半导体晶片加工成完工厚度，并且沿着在该第2蚀刻步骤中进行了扩展的该激光加工槽对该半导体晶片进行分割。
6.根据权利要求1至5中的任意一项所述的半导体晶片的加工方法，其特征在于，
该半导体晶片的加工方法还具有如下的凸块形成步骤：在通过该第1蚀刻步骤而露出的该金属电极上形成凸块。
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