CN110504205B - 高温静电吸盘 - Google Patents
高温静电吸盘 Download PDFInfo
- Publication number
- CN110504205B CN110504205B CN201910401989.XA CN201910401989A CN110504205B CN 110504205 B CN110504205 B CN 110504205B CN 201910401989 A CN201910401989 A CN 201910401989A CN 110504205 B CN110504205 B CN 110504205B
- Authority
- CN
- China
- Prior art keywords
- substrate
- dielectric body
- substrate support
- features
- chucking surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 claims abstract description 124
- 230000003750 conditioning effect Effects 0.000 claims abstract description 13
- 230000015556 catabolic process Effects 0.000 claims description 5
- 238000006731 degradation reaction Methods 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 238000009826 distribution Methods 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 3
- 238000011065 in-situ storage Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000011066 ex-situ storage Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
- B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Mechanical Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862672317P | 2018-05-16 | 2018-05-16 | |
| US62/672,317 | 2018-05-16 | ||
| US16/381,986 | 2019-04-11 | ||
| US16/381,986 US11133212B2 (en) | 2018-05-16 | 2019-04-11 | High temperature electrostatic chuck |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110504205A CN110504205A (zh) | 2019-11-26 |
| CN110504205B true CN110504205B (zh) | 2023-07-21 |
Family
ID=68533057
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910401989.XA Active CN110504205B (zh) | 2018-05-16 | 2019-05-15 | 高温静电吸盘 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US11133212B2 (enExample) |
| JP (1) | JP2020013983A (enExample) |
| KR (1) | KR20190131437A (enExample) |
| CN (1) | CN110504205B (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11646216B2 (en) | 2020-10-16 | 2023-05-09 | Applied Materials, Inc. | Systems and methods of seasoning electrostatic chucks with dielectric seasoning films |
| JP7685617B2 (ja) * | 2021-05-10 | 2025-05-29 | アプライド マテリアルズ インコーポレイテッド | 金属マトリックス複合材料を用いた高温サセプタ |
| US20240420933A1 (en) * | 2023-06-13 | 2024-12-19 | Applied Materials, Inc. | Resistivity-controlled dielectric materials for substrate supports with improved high temperature chucking |
| TW202522673A (zh) * | 2023-07-21 | 2025-06-01 | 美商蘭姆研究公司 | 具有高密度電漿阻障塗層的靜電卡盤 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0718438A (ja) * | 1993-06-17 | 1995-01-20 | Anelva Corp | 静電チャック装置 |
| JPH09237827A (ja) * | 1996-03-01 | 1997-09-09 | Hitachi Ltd | 静電吸着装置及びそれを用いた電子ビーム露光装置 |
| JPH10125769A (ja) * | 1996-10-21 | 1998-05-15 | Matsushita Electron Corp | 静電チャック電極構造 |
| CN1624892A (zh) * | 2003-12-05 | 2005-06-08 | 东京毅力科创株式会社 | 静电吸盘 |
| WO2008039611A2 (en) * | 2006-09-25 | 2008-04-03 | Tokyo Electron Limited | Temperature controlled substrate holder with non-uniform insulation layer for a substrate processing system |
| JP2017212374A (ja) * | 2016-05-26 | 2017-11-30 | 日本特殊陶業株式会社 | 基板保持装置及びその製造方法 |
| CN107665801A (zh) * | 2016-07-27 | 2018-02-06 | 朗姆研究公司 | 具有增大面密度的衬底支撑件及其相应制造方法 |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07153825A (ja) * | 1993-11-29 | 1995-06-16 | Toto Ltd | 静電チャック及びこの静電チャックを用いた被吸着体の処理方法 |
| JPH09172055A (ja) * | 1995-12-19 | 1997-06-30 | Fujitsu Ltd | 静電チャック及びウエハの吸着方法 |
| US5761023A (en) * | 1996-04-25 | 1998-06-02 | Applied Materials, Inc. | Substrate support with pressure zones having reduced contact area and temperature feedback |
| JPH10242255A (ja) * | 1997-02-28 | 1998-09-11 | Kyocera Corp | 真空吸着装置 |
| US6664549B2 (en) * | 2000-01-28 | 2003-12-16 | Hitachi Tokyo Electronics Co., Ltd. | Wafer chuck, exposure system, and method of manufacturing semiconductor device |
| JP2001274227A (ja) * | 2000-03-27 | 2001-10-05 | Hitachi Chem Co Ltd | ウェーハ保持用セラミック部材の製造法 |
| JP4043219B2 (ja) * | 2001-11-13 | 2008-02-06 | 株式会社日本セラテック | 静電チャック |
| JP4061131B2 (ja) * | 2002-06-18 | 2008-03-12 | キヤノンアネルバ株式会社 | 静電吸着装置 |
| KR20040070008A (ko) * | 2003-01-29 | 2004-08-06 | 쿄세라 코포레이션 | 정전척 |
| US7138629B2 (en) * | 2003-04-22 | 2006-11-21 | Ebara Corporation | Testing apparatus using charged particles and device manufacturing method using the testing apparatus |
| US7544251B2 (en) * | 2004-10-07 | 2009-06-09 | Applied Materials, Inc. | Method and apparatus for controlling temperature of a substrate |
| JP4740002B2 (ja) * | 2006-03-20 | 2011-08-03 | 日本碍子株式会社 | 窒化アルミニウム焼結体、半導体製造装置用部材、及び窒化アルミニウム焼結体の製造方法 |
| KR100804170B1 (ko) * | 2006-06-13 | 2008-02-18 | 주식회사 아이피에스 | 웨이퍼블럭 |
| JP4890421B2 (ja) * | 2006-10-31 | 2012-03-07 | 太平洋セメント株式会社 | 静電チャック |
| TWI475594B (zh) * | 2008-05-19 | 2015-03-01 | Entegris Inc | 靜電夾頭 |
| JP5785862B2 (ja) * | 2011-11-30 | 2015-09-30 | 新光電気工業株式会社 | 静電チャック及びその製造方法、基板温調固定装置 |
| JP6001675B2 (ja) * | 2012-11-28 | 2016-10-05 | 京セラ株式会社 | 載置用部材およびその製造方法 |
| KR102411747B1 (ko) * | 2013-10-30 | 2022-06-22 | 가부시키가이샤 니콘 | 기판 유지 장치, 노광 장치 및 디바이스 제조 방법 |
| EP3073521B1 (en) * | 2013-11-22 | 2022-04-20 | Kyocera Corporation | Electrostatic chuck |
| US9939736B2 (en) * | 2014-01-20 | 2018-04-10 | Asml Netherlands B.V. | Substrate holder and support table for lithography |
| JP6308858B2 (ja) * | 2014-04-25 | 2018-04-11 | 東京エレクトロン株式会社 | 静電チャック、載置台、プラズマ処理装置 |
| CN113972162A (zh) | 2014-08-15 | 2022-01-25 | 应用材料公司 | 在等离子体增强化学气相沉积系统中高温下使用压缩应力或拉伸应力处理晶片的方法和装置 |
| US10325800B2 (en) * | 2014-08-26 | 2019-06-18 | Applied Materials, Inc. | High temperature electrostatic chucking with dielectric constant engineered in-situ charge trap materials |
| JP6168162B2 (ja) * | 2014-09-30 | 2017-07-26 | 住友大阪セメント株式会社 | 静電チャック装置 |
| JP6703907B2 (ja) * | 2016-06-30 | 2020-06-03 | 新光電気工業株式会社 | 静電チャック、および、静電チャックの製造方法 |
| WO2018020956A1 (ja) * | 2016-07-25 | 2018-02-01 | 京セラ株式会社 | 試料保持具 |
| US20180148835A1 (en) * | 2016-11-29 | 2018-05-31 | Lam Research Corporation | Substrate support with varying depths of areas between mesas and corresponding temperature dependent method of fabricating |
| JP7083080B2 (ja) * | 2018-01-11 | 2022-06-10 | 株式会社日立ハイテク | プラズマ処理装置 |
-
2019
- 2019-04-11 US US16/381,986 patent/US11133212B2/en active Active
- 2019-05-14 JP JP2019091272A patent/JP2020013983A/ja active Pending
- 2019-05-14 KR KR1020190056425A patent/KR20190131437A/ko not_active Ceased
- 2019-05-15 CN CN201910401989.XA patent/CN110504205B/zh active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0718438A (ja) * | 1993-06-17 | 1995-01-20 | Anelva Corp | 静電チャック装置 |
| JPH09237827A (ja) * | 1996-03-01 | 1997-09-09 | Hitachi Ltd | 静電吸着装置及びそれを用いた電子ビーム露光装置 |
| JPH10125769A (ja) * | 1996-10-21 | 1998-05-15 | Matsushita Electron Corp | 静電チャック電極構造 |
| CN1624892A (zh) * | 2003-12-05 | 2005-06-08 | 东京毅力科创株式会社 | 静电吸盘 |
| WO2008039611A2 (en) * | 2006-09-25 | 2008-04-03 | Tokyo Electron Limited | Temperature controlled substrate holder with non-uniform insulation layer for a substrate processing system |
| JP2017212374A (ja) * | 2016-05-26 | 2017-11-30 | 日本特殊陶業株式会社 | 基板保持装置及びその製造方法 |
| CN107665801A (zh) * | 2016-07-27 | 2018-02-06 | 朗姆研究公司 | 具有增大面密度的衬底支撑件及其相应制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20190131437A (ko) | 2019-11-26 |
| JP2020013983A (ja) | 2020-01-23 |
| US20190355608A1 (en) | 2019-11-21 |
| US11133212B2 (en) | 2021-09-28 |
| CN110504205A (zh) | 2019-11-26 |
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