CN110473796A - 用于倒装芯片封装件的多个底部填充剂 - Google Patents

用于倒装芯片封装件的多个底部填充剂 Download PDF

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Publication number
CN110473796A
CN110473796A CN201910373631.0A CN201910373631A CN110473796A CN 110473796 A CN110473796 A CN 110473796A CN 201910373631 A CN201910373631 A CN 201910373631A CN 110473796 A CN110473796 A CN 110473796A
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China
Prior art keywords
core
tube core
agent material
underfill agent
underfill
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CN201910373631.0A
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M·R·库卡尼
T·金
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Texas Instruments Inc
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Texas Instruments Inc
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Abstract

本申请涉及用于倒装芯片封装件的多个底部填充剂，并公开一种组装倒装芯片IC封装件(100)的方法，其包括将核心底部填充剂材料(110)以一种图案施加到封装衬底(105)的表面，该图案包括与将被附接到其上的IC管芯(120)的核心区对应的区域，不包括与IC管芯的拐角对应的区域。通过以足够的力推动IC管芯，使核心底部填充剂材料被凸块(122)横向移位，使得凸块接触焊接焊盘(106)，从而将IC管芯键合到封装衬底。在推动之后，IC管芯的拐角不在核心底部填充剂上。边缘底部填充包括分配第二底部填充剂材料以填充IC管芯的拐角下方的区域，该第二底部填充剂材料是可固化液体。第二底部填充剂材料(112)被固化，从而导致其与核心底部填充剂相比具有更高的断裂强度。

Description

用于倒装芯片封装件的多个底部填充剂
技术领域
本公开涉及集成电路(IC)器件的倒装芯片封装。
背景技术
在引线框封装组装件上的倒装芯片中，在其键合焊盘上具有焊料凸块的管芯被倒装到引线框的管芯焊盘上，其中管芯然后键合到管芯焊盘并且通过对焊料凸块进行回流而被电耦接到键合焊盘。倒装芯片组装件在尺寸节省被认为有价值的情况下是有利的。倒装芯片技术可以与各种衬底结合使用，各种衬底包括陶瓷衬底、印刷线路板、柔性电路和硅衬底。焊料凸块通常位于倒装芯片的周边处的导电键合焊盘上，导电键合焊盘与芯片上的电路互连。由于通常由芯片的微电路执行的多种功能，通常需要相对大量的焊料凸块。
然后对焊球进行回流以证明良好的电连接，通常使用热空气回流来提供安装的芯片。然后使用介电粘合剂材料(例如包括环氧树脂)对安装的芯片进行底部填充。底部填充剂(underfill)旨在提供到衬底的更强的机械芯片连接，提供热桥，并确保焊点不会由于芯片和倒装芯片系统的其余部分的不同加热而受到应力。底部填充剂分散芯片和衬底(例如板)之间的热膨胀不匹配，有助于防止应力集中在焊点中形成，这可能导致过早失效。
发明内容
提供本发明内容是为了以简化的形式介绍所公开的概念的简要选择，这些概念将在下面的包括所提供的附图的具体实施方式中进一步描述。本发明内容不旨在限制所要求保护的主题的范围。
本公开认识到倒装芯片IC组装件在IC管芯的拐角(corner)附近存在相对高的应力，因此从被选择为具有高断裂强度的底部填充剂材料中获益。物理学中已知的断裂强度(或破裂强度)是试样失效或断裂时的应力，越高越好。跨越IC管芯的凸块阵列或球栅阵列(BGA)，特别是对于更精细的球间距，需要底部填充剂材料还具有良好的填充和流动性能以限制底部填充剂空隙(voiding)。因此，认识到找到满足这两种通常相互排斥的底部填充剂材料特征的一种底部填充剂材料和底部填充工艺是一项挑战。
所公开的方面提供了一种底部填充布置，其通过使用多个底部填充剂材料，解决了在管芯拐角处的凸块和底部填充剂开裂的问题，特别是对于具有相对精细的凸块间距(例如小于100微米)的相对大的IC管芯尺寸，以及解决了特别是对于精细焊球间距的底部填充剂空隙的问题。多个底部填充剂材料包括具有不同的相应材料特性的核心底部填充剂材料和第二底部填充剂材料。在IC管芯的拐角附近，拐角底部填充剂材料具有相对高的断裂强度和对IC管芯表面和衬底的相对强的粘合力，而在远离拐角延伸到管芯中心的IC管芯的核心区中，核心底部填充剂材料具有相对低的断裂强度和相对良好的流动特性。
一种组装倒装芯片IC封装件的方法，其包括将核心底部填充剂材料以一种图案施加到封装衬底的表面，该图案包括与将被附接到其上的IC管芯的核心区对应的区域，不包括与IC管芯的拐角对应的区域。通过以足够的力推动IC管芯，以使核心底部填充剂材料被凸块横向移位，使得凸块接触焊接焊盘(land pad)，从而将IC管芯键合到封装衬底。在推动之后，IC管芯的拐角不在核心底部填充剂上。边缘底部填充包括分配第二底部填充剂材料以填充IC管芯的拐角下方的区域，该第二底部填充剂材料是可固化液体。第二底部填充剂材料被固化，从而导致其与核心底部填充剂相比具有更高的断裂强度。
附图说明
现在将参考附图，附图不一定按比例绘制，其中：
图1是在IC管芯和封装衬底之间具有多个底部填充剂的示例倒装芯片封装件的一部分的横截面图。
图2A是封装衬底和核心底部填充剂材料的顶部透视图，封装衬底具有表面，在该表面上具有多个焊接焊盘，核心底部填充剂材料被示出为包括非导电膏(NCP)或非导电膜(NCF)，非导电膏(NCP)或非导电膜(NCF)以一种图案覆盖的表面的区包括与将附接的IC管芯的核心区对应的区域，但是核心底部填充剂材料不在与将附接的IC管芯的拐角对应的外部区域中。
图2B是图2A中参考的IC管芯的顶部透视图，其将被附接到图2A中的封装衬底。
图2C是倒装芯片封装件的顶部透视图，其具有在图2B中的IC管芯被附接到图2A中示出的封装衬底之后提供的多个底部填充剂。
图2D是倒装芯片封装件的顶部透视图，其具有在图2B中的IC管芯被附接到图2A中示出的封装衬底之后提供的多个底部填充剂，其中修改处理使得封装衬底105上的核心底部填充剂被改变，使得其包含在IC管芯的下方，而不是位于沿如图2C中所示的IC管芯边缘的外部。
具体实施方式
参考附图描述示例实施例，其中相同的附图标记用于表示相似或等同的元件。不应将动作或事件的图示排序视为限制性的，因为某些动作或事件可能以不同的顺序发生和/或与其他动作或事件同时发生。此外，可能不需要一些示出的动作或事件来实现根据本公开的方法。
图1是具有多个底部填充剂的倒装芯片IC封装件100的一部分的横截面图，其也在图2C中以顶部透视图示出。倒装芯片封装件100包括具有凸块122的IC管芯120，凸块122具有可选的焊帽123，凸块122耦接到IC管芯120的顶表面上的键合焊盘121，IC管芯120包括拐角和核心区，核心区包括远离拐角的管芯的中心。IC管芯120包括实现和执行所需功能的功能电路，例如数字IC(例如，数字信号处理器)或模拟IC(例如，放大器或功率转换器)，并且在一个实施例中为BiCMOS(MOS和双极)IC。在所公开的IC上提供的功能电路的能力可以变化，例如从简单器件到复杂器件。功能电路内包含的特定功能对于所公开的方面并不重要。
倒装芯片封装件100包括封装衬底105，封装衬底105具有封装表面，该表面上具有多个焊接焊盘106。封装衬底可以是印刷电路板(PCB)、引线框或另一IC管芯。
凸块122上的焊帽123附接到多个焊接焊盘106。凸块122可以包括铜柱。用于焊帽123的焊料可以丝网印刷在键合焊盘121上，或者镀在凸块122上。凸块122可以包括铜、金或材料的组合。核心底部填充剂材料110在IC管芯120和封装衬底105之间，在包括IC管芯的中心的核心区中位于IC管芯120下方，但不在IC管芯的拐角下方。核心底部填充剂110可以包括NCP或NCF，使得核心底部填充剂材料110在被施加时不是液体，例如通过施加常规的环氧树脂。第二底部填充剂材料112在IC管芯120和封装衬底105之间，位于IC管芯120的拐角下方。
第二底部填充剂包括第二成分，与核心底部填充剂材料110的断裂强度相比，第二成分具有更高的断裂强度。粘合强度是指所提供的粘合粘结的强度，通常测量为通过剪切或拉伸应力分离标准粘结区域的两个物体所需的力。与核心底部填充剂材料110的断裂强度相比，第二底部填充剂材料112(固化后)的断裂强度通常至少大50％。
选择第二底部填充剂材料112以承受管芯拐角处的应力。拐角处的应力取决于针对封装衬底和IC管芯的管芯尺寸、封装尺寸、衬底特性(例如热膨胀系数)、底部填充剂以及特定应用中的使用条件(例如，温度范围)。
认识到相对于用于精细间距设计的常规毛细管底部填充和其他底部填充技术，NCF底部填充剂被应用为层压到晶圆上的膜提供显着的优点。因为在切割之前使用层压工艺将NCF施加到晶圆，所以可以从组装工艺中消除树脂的处理和分配。另外，NCF的层压允许底部填充剂的精确、均匀放置。由于NCF在组装工艺开始时被施加，因此能够在背面研磨之后支撑薄化管芯。
NCP预先施加到封装衬底并且可以使用热压键合工艺(TCB)。对于间距小于约100μm且间隙小于约40μm的器件，传统的毛细管底部填充受到挑战。由于毛细管作用是由间隙距离和间隙内的真空作用驱动的，因此新的倒装芯片构造(例如铜(Cu)柱)可以限制毛细管底部填充剂在高密度尺寸内流动的能力，这可能导致可靠性降低。为了克服这些问题，可以使用TCB与NCP材料。例如，一种NCP材料是LOCTITE ECCOBOND NCP 5209，其可以预先施加到封装衬底上，在单个步骤中便于凸块保护和互连。
对于所公开的封装件，不需要坝结构。这是因为在IC管芯120下方使用诸如包括NCP或NCF的核心底部填充剂材料。可以控制这些类型的底部填充剂材料的流动以保持在管芯的凸块区域内(即，不流到管芯拐角)。而且，在管芯附接之前，将这些材料被施加在封装衬底105上。
图2A是封装衬底105和核心底部填充剂材料110的顶部透视图，封装衬底105具有表面，在该表面上具有多个焊接焊盘106，核心底部填充剂材料110包括NCP或NCF，NCP或NCF以一种图案覆盖的其表面的区包括与将附接的IC管芯的核心区对应的管芯附接区域105a，但是核心底部填充剂材料110不在与将附接的IC管芯的拐角对应的外部区域中。图2B是图2A中参考的IC管芯120的顶部透视图，其将被附接到图2A中的封装衬底105。
图2C是倒装芯片封装件的顶部透视图，其具有在图2B中的IC管芯120被附接到图2A中所示的封装衬底105并且然后添加第二底部填充剂材料112之后提供的多个底部填充剂110、112。图2D是倒装芯片封装件的顶部透视图，其具有在图2B中的IC管芯被附接到图2A中所示的封装衬底之后提供的多个底部填充剂150，其经修改使得核心底部填充剂110包含在IC管芯120下方，而不是沿着图2C中所示的IC管芯边缘流动到外部。图2C中所示的核心底部填充剂材料110的延伸超过IC管芯的区域可以被第二底部填充剂材料112占据，因此具有与管芯拐角处的材料相同的材料。
所公开的方面还包括组装倒装芯片IC封装件100的方法。该方法包括以一种图案向其上具有多个焊接焊盘106的封装衬底105的表面施加核心底部填充剂材料110，该图案覆盖的表面的区包括与IC管芯120的核心区对应的区域，IC管芯120具有耦接到IC管芯120上的键合焊盘121的凸块122，凸块122具有可选焊帽123，IC管芯将被附接到焊接焊盘。图案不包括与IC管芯120的拐角对应的表面的区域。在施加之后，IC管芯120被反转，然后通过以足够的力朝向封装衬底105向下推动IC管芯120，以使核心底部填充剂材料110被凸块122横向移位，使得凸块122到达以电接触焊接焊盘106，从而将IC管芯120倒装键合到封装衬底。因此，当IC管芯120及其凸块122被向下推动时，核心底部填充剂材料110为凸块122让路，使得凸块122刺穿核心底部填充剂材料110以到达焊接焊盘106。在推动之后，IC管芯120的所有拐角并非都在核心底部填充剂材料110上。
该方法然后包括进行边缘底部填充，边缘底部填充包括在附接之后分配包括可固化液体(通常为环氧树脂)的第二底部填充剂材料112，以填充包括在IC管芯120的拐角下方的区域。然后固化第二底部填充剂材料。在固化之后，与核心底部填充剂材料的断裂强度相比，第二底部填充剂具有更高的断裂强度。
如上所公开的，核心底部填充剂材料110可以包括NCF，其中施加包括将NCF作为膜层压体施加。核心底部填充剂材料110还可以包括NCP，通常通过使用毛细管将膏分配在衬底上来施加NCP。因此，当像常规环氧树脂那样施加时，核心底部填充剂材料110不是液体。施加核心底部填充剂材料包括控制核心底部填充剂材料的形状和位置。通常通过切割或图案化膜并且然后在层压期间将其对准到衬底上的适当位置来控制NCF形状和位置。通常通过调节毛细管尺寸、形状和分配图案来控制NCP形状和位置。
在焊料的情况下的键合可以进一步包括在推动之后和边缘底部填充之前将凸块进行回流。回流温度可以是260℃至320℃，持续几秒至几十分钟。键合还可以包括超声波键合或TCB，其可以包括或可以不包括回流。
所公开的方面的优点包括在IC管芯120的拐角处不需要坝。这降低了成本，降低了复杂性，端部提供了更多可用于凸块/布线的板/衬底空间。此外，由于在芯片附接之前将核心底部填充剂材料110(例如，NCP/NCF)施加到封装衬底105，因此更容易填充凸块之间的空间而没有空隙，因此适用于窄的凸块到凸块空间。
所公开的方面的优点包括在具有已知性能(衬底材料、厚度、管芯厚度等)的现有封装结构中相对容易地实现。所公开的方面将能力扩展到更大的芯片尺寸上的更精细的间距。对于片上系统(SOC)，管芯上越来越多的功能产生对具有更精细间距的更大管芯(例如，对于16nm CMOS及更高)的需要，其可以由所公开的方面提供。
所公开的实施例可以集成到各种组装流程中以形成各种不同的封装器件和相关产品。组装件可以包括单个半导体管芯或多个半导体管芯，例如包括多个堆叠半导体管芯的PoP配置。可以使用各种封装衬底。半导体管芯可以在其中包括各种元件和/或在其上包括各种层，这些元件和层包括阻挡层、介电层、器件结构、有源元件和无源元件(包括源极区、漏极区、位线、基极、发射极、集电极、导电线、导电通孔等)。此外，半导体管芯可以由多种工艺形成，其包括双极、绝缘栅双极晶体管(IGBT)、CMOS、BiCMOS和MEMS。
本公开所涉及领域的技术人员将理解，在要求保护的发明的范围内，许多其他实施例和实施例的变型是可能的，并且在不脱离本公开的范围的情况下，可以对所描述的实施例进行进一步的添加、删除、替换和修改。

Claims (20)

1.一种组装倒装芯片集成电路封装件即倒装芯片IC封装件的方法，包括：
以一种图案向其上具有多个焊接焊盘的封装衬底的表面施加核心底部填充剂材料，所述图案覆盖的所述表面的区包括与IC管芯的核心区对应的区域，所述IC管芯具有耦接到所述IC管芯上的键合焊盘的凸块，所述IC管芯将被附接到所述焊接焊盘，其中所述图案不包括与所述IC管芯的拐角对应的所述表面的区域；
在所述施加之后，将所述IC管芯键合到所述封装衬底包括以足够的力将所述IC管芯向下推向所述封装衬底，以使所述核心底部填充剂材料被所述凸块横向移位，使得所述凸块到达以接触所述焊接焊盘，其中在所述推动之后，所述IC管芯的所有所述拐角并非都在所述核心底部填充剂材料上；
进行边缘底部填充，其包括在所述附接之后，分配包括可固化液体的第二底部填充剂材料以填充包括在所述IC管芯的所述拐角下方的区域，以及
固化所述第二底部填充剂材料，其中与所述核心底部填充剂材料的断裂强度相比，在所述固化之后的所述第二底部填充剂具有更高的断裂强度。
2.根据权利要求1所述的方法，其中所述核心底部填充剂材料包括非导电膜即NCF，并且其中所述施加包括将所述NCF作为膜层压体施加。
3.根据权利要求2所述的方法，其中施加所述NCF包括通过预先图案化所述NCF并将所述NCF与至少一个预定位置对准来控制形状和位置。
4.根据权利要求1所述的方法，其中所述核心底部填充剂材料包括非导电膏即NCP，并且其中所述施加包括使用毛细管施加所述NCP。
5.根据权利要求4所述的方法，其中施加所述NCP包括调节毛细管尺寸、形状和分配图案。
6.根据权利要求1所述的方法，其中所述键合还包括在所述推动之后并且在所述边缘底部填充之前对所述凸块进行回流。
7.根据权利要求1所述的方法，其中所述键合包括超声波键合或热压键合。
8.根据权利要求1所述的方法，其中所述封装衬底包括印刷电路板即PCB、引线框或另一IC管芯。
9.根据权利要求1所述的方法，其中所述凸块包括焊料覆盖的铜柱。
10.根据权利要求1所述的方法，其中与所述核心底部填充剂材料相比，在所述固化之后的所述第二底部填充剂的断裂强度至少大50％。
11.根据权利要求1所述的方法，其中所述核心底部填充剂材料(110)远离所述IC管芯的所述拐角延伸超出所述IC管芯。
12.根据权利要求1所述的方法，其中所述核心底部填充剂材料(110)不延伸超出所述IC管芯。
13.根据权利要求1所述的方法，其中所述第二底部填充剂材料包括环氧树脂。
14.一种倒装芯片集成电路封装件即倒装芯片IC封装件，包括：
IC管芯，其具有耦接到所述IC管芯的顶表面上的键合焊盘的凸块，所述IC管芯包括拐角和核心区，所述核心区域包括远离所述拐角的所述管芯的中心；
封装衬底，其具有封装表面，在所述封装表面上具有多个焊接焊盘；
其中所述凸块附接到所述多个焊接焊盘；
所述IC管芯和所述封装衬底之间的核心底部填充剂材料，其在所述核心区中位于所述IC管芯下方，但不在所述拐角下方，以及
所述IC管芯和所述封装衬底之间的包括第二成分的第二底部填充剂材料，其位于所述IC管芯的所述拐角下方，其中与所述核心底部填充剂材料的断裂强度相比，所述第二底部填充剂具有更高的断裂强度。
15.根据权利要求14所述的倒装芯片IC封装件，其中所述核心底部填充剂材料包括非导电膜即NCF。
16.根据权利要求14所述的倒装芯片IC封装件，其中所述核心底部填充剂材料包括非导电膏即NCP。
17.根据权利要求14所述的倒装芯片IC封装件，其中所述封装衬底包括印刷电路板即PCB、引线框或另一IC管芯。
18.根据权利要求14所述的倒装芯片IC封装件，其中与所述核心底部填充剂材料的所述断裂强度相比，所述第二底部填充剂材料的所述断裂强度至少大50％。
19.根据权利要求14所述的倒装芯片IC封装件，其中所述凸块包括焊料覆盖的铜柱。
20.根据权利要求14所述的倒装芯片IC封装件，其中所述第二底部填充剂材料包括环氧树脂。
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