CN110391140B - 蚀刻方法和等离子体处理装置 - Google Patents
蚀刻方法和等离子体处理装置 Download PDFInfo
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- CN110391140B CN110391140B CN201910292084.3A CN201910292084A CN110391140B CN 110391140 B CN110391140 B CN 110391140B CN 201910292084 A CN201910292084 A CN 201910292084A CN 110391140 B CN110391140 B CN 110391140B
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- 238000005530 etching Methods 0.000 title claims abstract description 63
- 238000012545 processing Methods 0.000 title claims description 50
- 239000000758 substrate Substances 0.000 claims abstract description 170
- 238000001179 sorption measurement Methods 0.000 claims abstract description 58
- 239000013626 chemical specie Substances 0.000 claims abstract description 43
- 239000002243 precursor Substances 0.000 claims abstract description 31
- 239000000463 material Substances 0.000 claims abstract description 28
- 150000002500 ions Chemical class 0.000 claims abstract description 25
- 239000007789 gas Substances 0.000 claims description 177
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 24
- 229910052731 fluorine Inorganic materials 0.000 claims description 24
- 239000011737 fluorine Substances 0.000 claims description 24
- 229910052710 silicon Inorganic materials 0.000 claims description 24
- 239000010703 silicon Substances 0.000 claims description 24
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 13
- 229910052799 carbon Inorganic materials 0.000 claims description 13
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 13
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 230000008021 deposition Effects 0.000 abstract description 9
- 238000002474 experimental method Methods 0.000 description 33
- 230000001681 protective effect Effects 0.000 description 21
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- 230000000052 comparative effect Effects 0.000 description 13
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- 101001121408 Homo sapiens L-amino-acid oxidase Proteins 0.000 description 7
- 102100026388 L-amino-acid oxidase Human genes 0.000 description 7
- 238000001020 plasma etching Methods 0.000 description 7
- 101150064718 IML2 gene Proteins 0.000 description 6
- 101100113006 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) IML3 gene Proteins 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 4
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 4
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 4
- 101000827703 Homo sapiens Polyphosphoinositide phosphatase Proteins 0.000 description 3
- 102100023591 Polyphosphoinositide phosphatase Human genes 0.000 description 3
- 101100012902 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) FIG2 gene Proteins 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
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- 238000009616 inductively coupled plasma Methods 0.000 description 1
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- 229910052751 metal Inorganic materials 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
Classifications
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/311—Etching the insulating layers by chemical or physical means
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3341—Reactive etching
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- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018-079147 | 2018-04-17 | ||
| JP2018079147A JP6811202B2 (ja) | 2018-04-17 | 2018-04-17 | エッチングする方法及びプラズマ処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110391140A CN110391140A (zh) | 2019-10-29 |
| CN110391140B true CN110391140B (zh) | 2024-06-28 |
Family
ID=68162147
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910292084.3A Active CN110391140B (zh) | 2018-04-17 | 2019-04-12 | 蚀刻方法和等离子体处理装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US10811274B2 (enExample) |
| JP (1) | JP6811202B2 (enExample) |
| KR (1) | KR102767603B1 (enExample) |
| CN (1) | CN110391140B (enExample) |
| TW (1) | TWI809086B (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7071175B2 (ja) * | 2017-04-18 | 2022-05-18 | 東京エレクトロン株式会社 | 被処理体を処理する方法 |
| JP7296855B2 (ja) * | 2019-11-07 | 2023-06-23 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| TW202213517A (zh) * | 2020-08-28 | 2022-04-01 | 日商東京威力科創股份有限公司 | 基板處理方法及電漿處理裝置 |
| US11361971B2 (en) | 2020-09-25 | 2022-06-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | High aspect ratio Bosch deep etch |
| CN116897413A (zh) | 2021-02-24 | 2023-10-17 | 东京毅力科创株式会社 | 基板处理方法以及基板处理装置 |
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| JPH0927479A (ja) * | 1995-07-13 | 1997-01-28 | Sony Corp | ドライエッチング方法 |
| JP3403374B2 (ja) * | 2000-05-26 | 2003-05-06 | 松下電器産業株式会社 | 有機膜のエッチング方法、半導体装置の製造方法及びパターンの形成方法 |
| JP2002319574A (ja) * | 2001-04-23 | 2002-10-31 | Nec Corp | 窒化シリコン膜の除去方法 |
| JP4123428B2 (ja) | 2001-11-30 | 2008-07-23 | 東京エレクトロン株式会社 | エッチング方法 |
| US20090275202A1 (en) * | 2006-11-22 | 2009-11-05 | Masahiko Tanaka | Silicon structure having an opening which has a high aspect ratio, method for manufacturing the same, system for manufacturing the same, and program for manufacturing the same, and method for manufacturing etching mask for the silicon structure |
| US8999856B2 (en) * | 2011-03-14 | 2015-04-07 | Applied Materials, Inc. | Methods for etch of sin films |
| US20130034666A1 (en) * | 2011-08-01 | 2013-02-07 | Applied Materials, Inc. | Inductive plasma sources for wafer processing and chamber cleaning |
| JP5893864B2 (ja) * | 2011-08-02 | 2016-03-23 | 東京エレクトロン株式会社 | プラズマエッチング方法 |
| US9666414B2 (en) * | 2011-10-27 | 2017-05-30 | Applied Materials, Inc. | Process chamber for etching low k and other dielectric films |
| JP5932599B2 (ja) * | 2011-10-31 | 2016-06-08 | 株式会社日立ハイテクノロジーズ | プラズマエッチング方法 |
| TWI497586B (zh) * | 2011-10-31 | 2015-08-21 | Hitachi High Tech Corp | Plasma etching method |
| JP6096438B2 (ja) * | 2012-08-27 | 2017-03-15 | 東京エレクトロン株式会社 | プラズマエッチング方法及びプラズマエッチング装置 |
| JP2014209515A (ja) * | 2013-04-16 | 2014-11-06 | 東京エレクトロン株式会社 | エッチング方法 |
| US10297459B2 (en) * | 2013-09-20 | 2019-05-21 | Lam Research Corporation | Technique to deposit sidewall passivation for high aspect ratio cylinder etch |
| JP6405958B2 (ja) * | 2013-12-26 | 2018-10-17 | 東京エレクトロン株式会社 | エッチング方法、記憶媒体及びエッチング装置 |
| JP6327970B2 (ja) * | 2014-06-19 | 2018-05-23 | 東京エレクトロン株式会社 | 絶縁膜をエッチングする方法 |
| TWI593015B (zh) * | 2014-07-10 | 2017-07-21 | 東京威力科創股份有限公司 | 基板之高精度蝕刻方法 |
| CN105448635B (zh) * | 2014-08-28 | 2018-01-09 | 北京北方华创微电子装备有限公司 | 原子层刻蚀装置及采用其的原子层刻蚀方法 |
| JP6315809B2 (ja) * | 2014-08-28 | 2018-04-25 | 東京エレクトロン株式会社 | エッチング方法 |
| JP6328524B2 (ja) * | 2014-08-29 | 2018-05-23 | 東京エレクトロン株式会社 | エッチング方法 |
| JP6320282B2 (ja) * | 2014-12-05 | 2018-05-09 | 東京エレクトロン株式会社 | エッチング方法 |
| US9576811B2 (en) * | 2015-01-12 | 2017-02-21 | Lam Research Corporation | Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch) |
| JP2016136606A (ja) * | 2015-01-16 | 2016-07-28 | 東京エレクトロン株式会社 | エッチング方法 |
| JP2016157793A (ja) * | 2015-02-24 | 2016-09-01 | 東京エレクトロン株式会社 | エッチング方法 |
| JP6462477B2 (ja) * | 2015-04-27 | 2019-01-30 | 東京エレクトロン株式会社 | 被処理体を処理する方法 |
| JP6670672B2 (ja) * | 2016-05-10 | 2020-03-25 | 東京エレクトロン株式会社 | エッチング方法 |
| JP6788400B2 (ja) * | 2016-07-08 | 2020-11-25 | 東京エレクトロン株式会社 | 被処理体を処理する方法 |
| JP6671262B2 (ja) * | 2016-08-01 | 2020-03-25 | 東京エレクトロン株式会社 | 窒化膜の形成方法および形成装置 |
| US10658194B2 (en) * | 2016-08-23 | 2020-05-19 | Lam Research Corporation | Silicon-based deposition for semiconductor processing |
| CN106856163A (zh) * | 2016-11-22 | 2017-06-16 | 上海华力微电子有限公司 | 一种高深宽比图形结构的形成方法 |
| JP6804280B2 (ja) * | 2016-12-07 | 2020-12-23 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| US10297458B2 (en) * | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
| US10304677B2 (en) * | 2017-09-29 | 2019-05-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Low-k feature formation processes and structures formed thereby |
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2018
- 2018-04-17 JP JP2018079147A patent/JP6811202B2/ja active Active
- 2018-12-07 US US16/212,838 patent/US10811274B2/en active Active
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2019
- 2019-04-10 TW TW108112427A patent/TWI809086B/zh active
- 2019-04-12 CN CN201910292084.3A patent/CN110391140B/zh active Active
- 2019-04-16 KR KR1020190044292A patent/KR102767603B1/ko active Active
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| Publication number | Publication date |
|---|---|
| US10811274B2 (en) | 2020-10-20 |
| CN110391140A (zh) | 2019-10-29 |
| TWI809086B (zh) | 2023-07-21 |
| JP6811202B2 (ja) | 2021-01-13 |
| TW201944454A (zh) | 2019-11-16 |
| JP2019186501A (ja) | 2019-10-24 |
| KR102767603B1 (ko) | 2025-02-12 |
| KR20190121257A (ko) | 2019-10-25 |
| US20190318936A1 (en) | 2019-10-17 |
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