CN110365921B - 电子设备 - Google Patents

电子设备 Download PDF

Info

Publication number
CN110365921B
CN110365921B CN201910767768.4A CN201910767768A CN110365921B CN 110365921 B CN110365921 B CN 110365921B CN 201910767768 A CN201910767768 A CN 201910767768A CN 110365921 B CN110365921 B CN 110365921B
Authority
CN
China
Prior art keywords
signal
photoelectric conversion
imaging
ramp signal
ramp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201910767768.4A
Other languages
English (en)
Chinese (zh)
Other versions
CN110365921A (zh
Inventor
村田宽信
纲井史郎
栗山孝司
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to CN201910767768.4A priority Critical patent/CN110365921B/zh
Publication of CN110365921A publication Critical patent/CN110365921A/zh
Application granted granted Critical
Publication of CN110365921B publication Critical patent/CN110365921B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H04N25/581—Control of the dynamic range involving two or more exposures acquired simultaneously
    • H04N25/585—Control of the dynamic range involving two or more exposures acquired simultaneously with pixels having different sensitivities within the sensor, e.g. fast or slow pixels or pixels having different sizes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/51—Control of the gain
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/704—Pixels specially adapted for focusing, e.g. phase difference pixel sets
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/7795—Circuitry for generating timing or clock signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60—Control of cameras or camera modules
    • H04N23/67—Focus control based on electronic image sensor signals
    • H04N23/672—Focus control based on electronic image sensor signals based on the phase difference signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CN201910767768.4A 2013-12-06 2014-12-01 电子设备 Active CN110365921B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910767768.4A CN110365921B (zh) 2013-12-06 2014-12-01 电子设备

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2013252940A JP6413235B2 (ja) 2013-12-06 2013-12-06 撮像素子および撮像装置
JP2013-252940 2013-12-06
CN201480073715.8A CN106416229B (zh) 2013-12-06 2014-12-01 拍摄元件以及拍摄装置
PCT/JP2014/081791 WO2015083674A1 (ja) 2013-12-06 2014-12-01 撮像素子および撮像装置
CN201910767768.4A CN110365921B (zh) 2013-12-06 2014-12-01 电子设备

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201480073715.8A Division CN106416229B (zh) 2013-12-06 2014-12-01 拍摄元件以及拍摄装置

Publications (2)

Publication Number Publication Date
CN110365921A CN110365921A (zh) 2019-10-22
CN110365921B true CN110365921B (zh) 2023-12-12

Family

ID=53273436

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201910767768.4A Active CN110365921B (zh) 2013-12-06 2014-12-01 电子设备
CN201480073715.8A Active CN106416229B (zh) 2013-12-06 2014-12-01 拍摄元件以及拍摄装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201480073715.8A Active CN106416229B (zh) 2013-12-06 2014-12-01 拍摄元件以及拍摄装置

Country Status (5)

Country Link
US (3) US10205901B2 (https=)
EP (1) EP3079356A4 (https=)
JP (1) JP6413235B2 (https=)
CN (2) CN110365921B (https=)
WO (1) WO2015083674A1 (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102314905B1 (ko) * 2015-09-30 2021-10-19 가부시키가이샤 니콘 촬상 소자 및 전자 카메라
DE112017001115T5 (de) * 2016-03-02 2018-11-22 Sony Corporation Bildgebungssteuereinheit, Bildgebungseinrichtung und Bildgebungssteuerverfahren
WO2018003999A1 (ja) 2016-06-30 2018-01-04 株式会社ニコン 撮像装置
DE102016212797A1 (de) * 2016-07-13 2018-01-18 Robert Bosch Gmbh Lichtsensormodul, Verfahren zum Betreiben eines Lichtsensormoduls und Verfahren zum Herstellen eines Lichtsensormoduls
JP6808564B2 (ja) * 2017-04-07 2021-01-06 キヤノン株式会社 信号処理装置及び方法、撮像素子、及び撮像装置
JP6836486B2 (ja) * 2017-09-20 2021-03-03 浜松ホトニクス株式会社 位置検出センサ
EP3937483B1 (en) * 2019-03-07 2024-12-11 Sony Semiconductor Solutions Corporation Imaging device
JP7286431B2 (ja) * 2019-06-20 2023-06-05 キヤノン株式会社 光電変換装置、光電変換システム、および移動体
WO2021012071A1 (zh) * 2019-07-19 2021-01-28 深圳市汇顶科技股份有限公司 图像传感器以及相关芯片及电子装置
CN114667605B (zh) * 2019-11-29 2025-08-26 索尼半导体解决方案公司 摄像装置和电子设备
MY202559A (en) 2019-12-27 2024-05-08 Chugai Pharmaceutical Co Ltd Anti-ctla-4 antibody and use thereof
AU2022299846B2 (en) 2021-06-25 2024-08-15 Chugai Seiyaku Kabushiki Kaisha Anti–ctla-4 antibody
TWI864408B (zh) 2021-06-25 2024-12-01 日商中外製藥股份有限公司 抗ctla-4抗體的用途
WO2023149417A1 (ja) * 2022-02-07 2023-08-10 ソニーセミコンダクタソリューションズ株式会社 撮像装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101212696A (zh) * 2006-12-27 2008-07-02 松下电器产业株式会社 固体摄像器件、摄像机、车及监视装置
CN101939917A (zh) * 2008-02-07 2011-01-05 夏普株式会社 A/d转换电路及固体摄像装置
CN102006427A (zh) * 2009-08-28 2011-04-06 索尼公司 成像器件和相机系统
WO2013088699A1 (ja) * 2011-12-16 2013-06-20 パナソニック株式会社 固体撮像装置、撮像装置
WO2013150120A1 (en) * 2012-04-04 2013-10-10 Commissariat A L'energie Atomique Et Aux Energies Alternatives Pixel processing circuitry

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100308884B1 (ko) * 1998-12-22 2001-11-22 박종섭 씨모스 이미지 센서를 위한 아날로그-디지털 변환 장치
US6809769B1 (en) * 2000-06-22 2004-10-26 Pixim, Inc. Designs of digital pixel sensors
JP4236152B2 (ja) * 2002-07-29 2009-03-11 富士フイルム株式会社 固体撮像素子
US7382407B2 (en) * 2002-08-29 2008-06-03 Micron Technology, Inc. High intrascene dynamic range NTSC and PAL imager
JP4311181B2 (ja) * 2003-12-05 2009-08-12 ソニー株式会社 半導体装置の制御方法および信号処理方法並びに半導体装置および電子機器
JP4449565B2 (ja) 2004-05-12 2010-04-14 ソニー株式会社 物理量分布検知の半導体装置
JP4816457B2 (ja) * 2004-09-02 2011-11-16 ソニー株式会社 撮像装置及び撮像結果の出力方法
JP2006303752A (ja) 2005-04-19 2006-11-02 Sony Corp 撮像装置
JP4654857B2 (ja) * 2005-09-26 2011-03-23 ソニー株式会社 Ｄａ変換装置、ａｄ変換装置、半導体装置
JP4744343B2 (ja) * 2006-04-10 2011-08-10 ソニー株式会社 固体撮像装置および固体撮像装置の駆動方法
JP4961982B2 (ja) * 2006-12-07 2012-06-27 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法および撮像装置
US7989745B2 (en) * 2007-10-01 2011-08-02 Nikon Corporation Solid-state imaging device with focus detection and electronic camera with focus adjustment
US7755689B2 (en) * 2007-10-05 2010-07-13 Teledyne Licensing, Llc Imaging system with low noise pixel array column buffer
JP2009147736A (ja) * 2007-12-14 2009-07-02 Hoya Corp デジタルカメラ
TWI422020B (zh) * 2008-12-08 2014-01-01 Sony Corp 固態成像裝置
JP5262823B2 (ja) * 2009-02-23 2013-08-14 ソニー株式会社 固体撮像装置および電子機器
TWI441512B (zh) 2009-10-01 2014-06-11 新力股份有限公司 影像取得裝置及照相機系統
US8606051B2 (en) * 2010-08-16 2013-12-10 SK Hynix Inc. Frame-wise calibration of column-parallel ADCs for image sensor array applications
JP5513623B2 (ja) * 2010-08-24 2014-06-04 富士フイルム株式会社 固体撮像装置
KR101975440B1 (ko) * 2011-05-12 2019-08-23 디퍼이 신테스 프로덕츠, 인코포레이티드 내시경용 개선된 이미지 센서
JP5808162B2 (ja) * 2011-06-23 2015-11-10 キヤノン株式会社 撮像素子、撮像装置及び撮像素子の駆動方法
JP5868049B2 (ja) * 2011-07-19 2016-02-24 キヤノン株式会社 撮像装置
JP5791571B2 (ja) * 2011-08-02 2015-10-07 キヤノン株式会社 撮像素子及び撮像装置
JP2013055500A (ja) * 2011-09-02 2013-03-21 Sony Corp 固体撮像素子およびカメラシステム
JP5871531B2 (ja) * 2011-09-08 2016-03-01 キヤノン株式会社 撮像装置、撮像システム
US9013615B2 (en) * 2011-09-21 2015-04-21 Semiconductor Components Industries, Llc Image sensor with flexible interconnect capabilities
JP2015035637A (ja) 2011-11-30 2015-02-19 パナソニック株式会社 固体撮像装置およびカメラ
TWI530183B (zh) * 2011-12-08 2016-04-11 新力股份有限公司 An imaging element, a control method, and an imaging device
JP5893572B2 (ja) * 2012-03-01 2016-03-23 キヤノン株式会社 撮像装置、撮像システム、撮像装置の駆動方法
JP6164846B2 (ja) * 2012-03-01 2017-07-19 キヤノン株式会社 撮像装置、撮像システム、撮像装置の駆動方法
JP2013207433A (ja) * 2012-03-28 2013-10-07 Sony Corp 固体撮像装置、撮像信号出力方法および電子機器
JP5847737B2 (ja) * 2012-03-30 2016-01-27 キヤノン株式会社 光電変換装置および撮像システム
JP2014165396A (ja) * 2013-02-26 2014-09-08 Sony Corp 固体撮像装置および電子機器
US20140326856A1 (en) * 2013-05-06 2014-11-06 Omnivision Technologies, Inc. Integrated circuit stack with low profile contacts
US9531967B2 (en) * 2013-12-31 2016-12-27 Faro Technologies, Inc. Dynamic range of a line scanner having a photosensitive array that provides variable exposure

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101212696A (zh) * 2006-12-27 2008-07-02 松下电器产业株式会社 固体摄像器件、摄像机、车及监视装置
CN101939917A (zh) * 2008-02-07 2011-01-05 夏普株式会社 A/d转换电路及固体摄像装置
CN102006427A (zh) * 2009-08-28 2011-04-06 索尼公司 成像器件和相机系统
WO2013088699A1 (ja) * 2011-12-16 2013-06-20 パナソニック株式会社 固体撮像装置、撮像装置
WO2013150120A1 (en) * 2012-04-04 2013-10-10 Commissariat A L'energie Atomique Et Aux Energies Alternatives Pixel processing circuitry

Also Published As

Publication number Publication date
EP3079356A4 (en) 2017-08-16
CN106416229B (zh) 2019-09-10
JP6413235B2 (ja) 2018-10-31
US20160381313A1 (en) 2016-12-29
US20190104266A1 (en) 2019-04-04
WO2015083674A1 (ja) 2015-06-11
US10798325B2 (en) 2020-10-06
EP3079356A1 (en) 2016-10-12
CN106416229A (zh) 2017-02-15
CN110365921A (zh) 2019-10-22
US10205901B2 (en) 2019-02-12
US20200404200A1 (en) 2020-12-24
JP2015111762A (ja) 2015-06-18

Similar Documents

Publication Publication Date Title
CN110365921B (zh) 电子设备
US11418747B2 (en) Imaging sensor and imaging device with column ADC
JP6593470B2 (ja) 撮像素子、撮像装置、および電子機器
JP7232291B2 (ja) 撮像素子及び撮像装置
US20240250108A1 (en) Image sensor and image capturing device
JP2025164946A (ja) 撮像素子
JP6136103B2 (ja) 撮像装置、撮像素子および読出方法。
JP7094852B2 (ja) 撮像素子および撮像装置
JP2020061758A (ja) 撮像素子及び撮像装置
JP7156353B2 (ja) 撮像素子および撮像装置
JP6641135B2 (ja) 撮像素子及び撮像装置
JP2023057134A (ja) 撮像素子及び撮像装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant