CN110325918B - 直接成像曝光装置以及直接成像曝光方法 - Google Patents

直接成像曝光装置以及直接成像曝光方法 Download PDF

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Publication number
CN110325918B
CN110325918B CN201780070310.2A CN201780070310A CN110325918B CN 110325918 B CN110325918 B CN 110325918B CN 201780070310 A CN201780070310 A CN 201780070310A CN 110325918 B CN110325918 B CN 110325918B
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exposure
exposed
pattern
pixel
point
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Chinese (zh)
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CN110325918A (zh
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铃木昌治
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Aditech Engineering Co ltd
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Aditech Engineering Co ltd
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CN201780070310.2A 2016-11-14 2017-11-13 直接成像曝光装置以及直接成像曝光方法 Active CN110325918B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2016-221962 2016-11-14
JP2016221962A JP7023601B2 (ja) 2016-11-14 2016-11-14 ダイレクトイメージング露光装置及びダイレクトイメージング露光方法
PCT/JP2017/040719 WO2018088550A1 (ja) 2016-11-14 2017-11-13 ダイレクトイメージング露光装置及びダイレクトイメージング露光方法

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CN110325918A CN110325918A (zh) 2019-10-11
CN110325918B true CN110325918B (zh) 2021-08-31

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JP (1) JP7023601B2 (ko)
KR (1) KR102484974B1 (ko)
CN (1) CN110325918B (ko)
WO (1) WO2018088550A1 (ko)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10495979B1 (en) * 2019-02-19 2019-12-03 Applied Materials, Inc. Half tone scheme for maskless lithography
JP7196011B2 (ja) * 2019-04-26 2022-12-26 株式会社アドテックエンジニアリング 直描式露光装置
JP7293032B2 (ja) * 2019-08-08 2023-06-19 株式会社エスケーエレクトロニクス 露光方法及び露光装置
JP7431532B2 (ja) 2019-08-21 2024-02-15 株式会社Ｓｃｒｅｅｎホールディングス 描画方法、および、描画装置
JP7432418B2 (ja) * 2020-03-26 2024-02-16 株式会社オーク製作所 露光装置および露光方法
CN113840093B (zh) * 2020-06-24 2023-07-25 北京小米移动软件有限公司 图像生成方法及装置
WO2023282208A1 (ja) 2021-07-05 2023-01-12 株式会社ニコン パターン露光装置、デバイス製造方法、及び露光装置
CN113379651B (zh) * 2021-08-11 2021-11-19 深圳市先地图像科技有限公司 一种激光成像过程中的图像处理方法、系统及相关设备

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US5393987A (en) * 1993-05-28 1995-02-28 Etec Systems, Inc. Dose modulation and pixel deflection for raster scan lithography
CN101551592A (zh) * 2008-03-31 2009-10-07 大日本网屏制造株式会社 图案描画装置及图案描画方法
CN102385256A (zh) * 2010-08-30 2012-03-21 株式会社Orc制作所 曝光装置
CN102998914A (zh) * 2012-12-31 2013-03-27 苏州大学 一种直写式光刻加工系统及光刻方法
JP5414281B2 (ja) * 2009-01-05 2014-02-12 大日本スクリーン製造株式会社 露光装置および露光方法
CN104298080A (zh) * 2014-11-06 2015-01-21 苏州苏大维格光电科技股份有限公司 一种无掩膜激光直写叠加曝光方法
JP5697188B2 (ja) * 2009-09-15 2015-04-08 国立大学法人東北大学 露光装置および露光方法

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US20050129397A1 (en) * 2002-06-07 2005-06-16 Fuji Photo Film Co., Ltd. Exposure device
JP2004212471A (ja) 2002-12-27 2004-07-29 Fuji Photo Film Co Ltd 描画ヘッド、描画装置及び描画方法
JP4250052B2 (ja) 2003-10-14 2009-04-08 財団法人国際科学振興財団 パターン描画方法、及びパターン描画装置
US20040239901A1 (en) 2003-05-29 2004-12-02 Asml Holding N.V. System and method for producing gray scaling using multiple spatial light modulators in a maskless lithography system
CN1842746A (zh) 2003-08-27 2006-10-04 皇家飞利浦电子股份有限公司 用于形成光学图像的控制电路和方法
JP2005210112A (ja) * 2003-12-26 2005-08-04 Fuji Photo Film Co Ltd 露光方法および装置
JP2005203697A (ja) 2004-01-19 2005-07-28 Fuji Photo Film Co Ltd マルチビーム露光装置
US7230677B2 (en) 2004-12-22 2007-06-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method utilizing hexagonal image grids
JP2007003861A (ja) * 2005-06-24 2007-01-11 Fujifilm Holdings Corp 露光方法および装置
JP2007041239A (ja) * 2005-08-02 2007-02-15 Fujifilm Corp カラーフィルタの製造方法、及びカラーフィルタ並びに液晶表示装置
JP2008076590A (ja) 2006-09-20 2008-04-03 Fujifilm Corp 描画位置測定方法および装置
JP2008256730A (ja) * 2007-03-30 2008-10-23 Fujifilm Corp 液晶表示装置用ｔｆｔアレイ基板の製造装置及び製造方法
EP2132602B1 (de) * 2007-04-05 2015-06-24 Heidelberg Instruments Mikrotechnik GmbH Verfahren und vorrichtung zum abbilden einer programmierbaren maske auf einem substrat
US8335999B2 (en) 2010-06-11 2012-12-18 Orbotech Ltd. System and method for optical shearing

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5393987A (en) * 1993-05-28 1995-02-28 Etec Systems, Inc. Dose modulation and pixel deflection for raster scan lithography
CN101551592A (zh) * 2008-03-31 2009-10-07 大日本网屏制造株式会社 图案描画装置及图案描画方法
JP5414281B2 (ja) * 2009-01-05 2014-02-12 大日本スクリーン製造株式会社 露光装置および露光方法
JP5697188B2 (ja) * 2009-09-15 2015-04-08 国立大学法人東北大学 露光装置および露光方法
CN102385256A (zh) * 2010-08-30 2012-03-21 株式会社Orc制作所 曝光装置
CN102998914A (zh) * 2012-12-31 2013-03-27 苏州大学 一种直写式光刻加工系统及光刻方法
CN104298080A (zh) * 2014-11-06 2015-01-21 苏州苏大维格光电科技股份有限公司 一种无掩膜激光直写叠加曝光方法

Also Published As

Publication number Publication date
WO2018088550A1 (ja) 2018-05-17
CN110325918A (zh) 2019-10-11
KR20190072573A (ko) 2019-06-25
JP7023601B2 (ja) 2022-02-22
JP2018081153A (ja) 2018-05-24
KR102484974B1 (ko) 2023-01-05

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