CN110178457A - 安装头 - Google Patents

安装头 Download PDF

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Publication number
CN110178457A
CN110178457A CN201780083286.6A CN201780083286A CN110178457A CN 110178457 A CN110178457 A CN 110178457A CN 201780083286 A CN201780083286 A CN 201780083286A CN 110178457 A CN110178457 A CN 110178457A
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China
Prior art keywords
gas
path
mounting head
heater
attraction
Prior art date
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Granted
Application number
CN201780083286.6A
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English (en)
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CN110178457B (zh
Inventor
西出学人
瀬山耕平
林圣�
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Shinkawa Ltd
Arakawa Co Ltd
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Arakawa Co Ltd
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K13/00—Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components
    • H05K13/04—Mounting of components, e.g. of leadless components
    • H05K13/0404—Pick-and-place heads or apparatus, e.g. with jaws
    • H05K13/0408—Incorporating a pick-up tool
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    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
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    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
    • B23K3/08—Auxiliary devices therefor
    • B23K3/087—Soldering or brazing jigs, fixtures or clamping means
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
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Abstract

本发明的安装装置具备：附件(10)，具有吸附半导体裸片(70)的表面(14)；加热器(20)，配置于附件(10)的与表面(14)相反侧，对吸附于表面(14)上的半导体裸片(70)进行加热；吸引孔，一体地贯穿附件(10)及加热器(20)，并在表面(14)上开口；以及本体部，配置于加热器(20)的与附件(10)相反侧，并设置有与吸引孔连通的真空吸引路径(32)；真空吸引路径(32)具有储存包含自吸引孔所吸引的气体凝结而成的液体或所述液体凝固而成的固体的异物的储存部(90)。由此，可抑制安装头的污损。

Description

安装头
技术领域
本发明涉及一种用于将半导体裸片的电极与基板或其他半导体裸片的电极进行接合的电子零件安装装置的安装头。
背景技术
之前，利用加热工具对真空吸附于附件(attachment)上的半导体裸片进行加热，并按压于涂布有热硬化性树脂的基板上来将半导体裸片安装于基板上的方法得到广泛使用。热硬化性树脂若得到加热，则挥发成分气化，经气化的挥发成分若得到冷却，则凝结而变成液体或凝固而变成固体。因此，存在如下的情况：因加热而气化的热硬化性树脂的挥发成分自加热工具与附件之间的微小的间隙或附件与半导体裸片之间的微小的间隙被吸入至真空流路内，在切换阀内部凝结或凝固而引起真空吸引的动作不良，或在加热工具与附件的间隙中凝固而导致半导体裸片的加热不良。因此，提出有如下的方法：利用盖子将加热工具与附件的周围覆盖，防止自所述盖子中喷出空气而经气化的挥发成分被吸入至加热工具与附件之间的微小的间隙或真空吸引孔中(参照专利文献1)。
现有技术文献
专利文献
专利文献1：日本专利特表2012-165313号公报
发明内容
发明所要解决的问题
然而，近年来，广泛进行将多段在两面配置有突出电极的半导体裸片层叠接合的堆叠安装。在所述堆叠安装中，在接合侧的突出电极上形成焊料凸块，将非导电性膜(Non-Conductive Film，NCF)贴附于其表面上后，使半导体裸片反转，并使相反侧的面吸附于附件上。其后，若通过附件来将半导体裸片的凸块按压于其他半导体裸片的电极上，并且使附件的温度上升至焊料的熔解温度(250℃左右)为止，则NCF低粘度化并填充半导体裸片的间隙。其后，焊料熔融，并且树脂硬化得以进行。而且，若使附件上升，则焊料的温度下降并固化，半导体裸片的堆叠安装结束。
被堆叠安装的半导体裸片在吸附于附件上的面上也形成有突出电极，因此若使半导体裸片真空吸附于附件的前端，则在附件的表面与半导体裸片的表面之间形成仅相当于突出电极的高度的间隙。NCF若被加热至200℃以上，则丙烯酸单体等分子量小的成分气化，因此若使附件的温度上升至焊料的熔融温度(250℃左右)为止，则NCF的经气化的成分自所述间隙被吸入至附件内部的真空吸引孔中。
此处，在所述堆叠安装中，当拾取半导体裸片时，必须将附件的温度例如冷却至100℃左右为止，以不使NCF变成低粘度。另外，当吸附半导体裸片时，真空吸引孔的压力为真空，但半导体裸片的接合后，为了自附件上卸除半导体裸片，必须停止真空。因此，当在吸附半导体裸片，并将电极进行接合时将附件加热至250℃左右为止时，NCF的气化成分以气体的状态被吸引至设置于附件内部的真空吸引孔中。其后，若吸引停止，则被吸引的气化成分滞留于真空吸引孔中，若附件被冷却至100℃左右为止，则滞留于内部的经气化的成分凝结而变成液体这一过程会重复。而且，留在真空吸引孔内的包含气化成分的大量的液体例如在新的半导体裸片的堆叠处理等时得到加热，由此硬化，并生成包含气化成分的树脂，所述树脂蓄积于真空吸引孔中。最终存在如下的问题：所蓄积的树脂将真空吸引孔密封，并污损安装头等。
本发明是鉴于所述情况而成者，其将抑制安装头的污损作为目的之一。
解决问题的技术手段
本发明的一实施方式的安装头是用于将半导体裸片的电极与基板或其他半导体裸片的电极进行接合的电子零件安装装置，安装头包括：附件，具有吸附半导体裸片的吸附面；接合加热器，配置于所述附件的与所述吸附面相反侧的面上，对所述附件及所述半导体裸片进行加热；本体部，在端面上保持所述接合加热器；第1开口部，形成于所述附件的所述吸附面上；第2开口部，形成于所述本体部的与所述端面不同的面上；吸引路径，具有在所述本体部内使自所述第1开口部所吸引的气体的流路弯曲的第1弯曲部，并贯穿所述附件、所述接合加热器、及所述本体部的内部，且所述吸引路径将自所述第1开口部所吸引的气体在所述第2开口部排出至外部；以及防滴下部，形成于所述吸引路径中，并抑制所述气体凝结而成的液滴滴下至所述接合加热器上。
在所述安装头中，所述防滴下部也可具备储存部，所述储存部配置于比所述吸引路径的所述第1弯曲部更靠近所述气体的吸引方向下游侧，并储存所述气体凝结而成的所述液滴或所述液滴凝固而成的固体。
在所述安装头中，所述防滴下部也可具备路径加热器，所述路径加热器在所述吸引路径中配置在贯穿所述接合加热器的贯穿孔的正上方部，并将所述气体加热至所述气体的凝结温度以上的温度。
在所述安装头中，所述防滴下部也可具备冷却部，所述冷却部配置于比所述吸引路径的所述第1弯曲部更靠近所述气体的吸引方向下游侧，并将所述气体冷却至所述气体的凝结温度以下的温度。
在所述安装头中，所述防滴下部也可具备凝结部，所述凝结部配置于比所述吸引路径的所述第1弯曲部更靠近所述气体的吸引方向下游侧，并增加所述气体的流体阻力。
在所述安装头中，所述吸引路径进而具备设置于比所述第1弯曲部更靠近所述气体的吸引方向下游侧的第2弯曲部，所述防滴下部也可横跨所述第1弯曲部及所述第2弯曲部来设置。
在所述安装头中，储存所述气体凝结而成的所述液滴或所述液滴凝固而成的固体的储存部也可配置于所述第2弯曲部上。
在所述安装头中，所述本体部也可在穿过储存所述气体凝结而成的所述液滴或所述液滴凝固而成的固体的储存部的分割面上，上下可分割地构成。
在所述安装头中，所述储存部的底部也可设置于通过所述分割面所分割的下部本体部中。
在所述安装头中，所述本体部也可以如下方式构成：在通过所述分割面所分割的上部本体部中具备第3开口部，所述第3开口部是以朝向所述气体的吸引方向下游侧逐渐地变小的方式形成为锥状，所述第3开口部的一端面的直径大于所述第3开口部的所述吸引方向下游侧的另一端面的直径。
在所述安装头中，所述本体部也可沿着所述气体的吸引方向依次具备：路径加热器，在所述吸引路径中配置在贯穿所述接合加热器的贯穿孔的正上方部，并将所述气体加热至所述气体的凝结温度以上的温度；储存部，配置于比所述吸引路径的所述第1弯曲部更靠近所述气体的吸引方向下游侧，并储存所述气体凝结而成的所述液滴或所述液滴凝固而成的固体；以及冷却部，配置于比所述吸引路径的所述第1弯曲部更靠近所述气体的吸引方向下游侧，并将所述气体冷却至所述气体的凝结温度以下的温度。
在所述安装头中，所述本体部也可在所述吸引路径中，在与设置有储存所述气体凝结而成的所述液滴或所述液滴凝固而成的固体的储存部的位置相向的位置上进而具备突起部。
在所述安装头中，所述接合加热器与所述本体部也可包含具有不同的导热率的材料而构成。
发明的效果
根据本发明，可抑制安装头的污损。
附图说明
图1是表示本发明的实施方式的倒装芯片接合装置的构成的构成图。
图2A是本发明的实施方式的倒装芯片接合装置中所使用的附件的俯视图。
图2B是本发明的实施方式的倒装芯片接合装置中所使用的附件的剖面图。
图2C是本发明的实施方式的倒装芯片接合装置中所使用的附件的底面图。
图3A是本发明的实施方式的倒装芯片接合装置中所使用的接合加热器的俯视图。
图3B是本发明的实施方式的倒装芯片接合装置中所使用的接合加热器的剖面图。
图3C是本发明的实施方式的倒装芯片接合装置中所使用的接合加热器的底面图。
图4是表示本发明的实施方式的另一倒装芯片接合装置的构成的构成图。
图5是自图4的V-V方向观察的剖面图。
图6是表示本发明的实施方式的另一倒装芯片接合装置的构成的构成图。
图7是表示本发明的实施方式的另一倒装芯片接合装置的构成的构成图。
图8是表示使用本发明的实施方式的倒装芯片接合装置将在两面配置有电极的半导体裸片堆叠安装的步骤之中，使第二段的半导体裸片吸附于附件上的状态的说明图。
图9是表示在图8所示的步骤后，使附件下降而将第二段的半导体裸片的电极按压于第一段的半导体裸片的电极上，并且利用接合加热器对第二段的半导体裸片进行加热的状态的说明图。
图10是表示在图9所示的步骤后，使附件上升的状态的说明图。
图11是表示本发明的实施方式的倒装芯片接合装置中所使用的本体的构成的一例的构成图。
图12是自图11的XII-XII方向观察的剖面图。
图13是表示本发明的实施方式的倒装芯片接合装置中所使用的本体的构成的一例的构成图。
具体实施方式
以下，参照附图对本发明的一实施方式进行说明。但是，以下所说明的实施方式始终是例示，并无排除以下未明示的各种变形或技术的应用的意图。即，本发明可在不脱离其主旨的范围内进行各种变形而实施。另外，在一连串的附图的记载中，对同一或类似的部分标注同一或类似的符号来表示。
一面参照图1～图4，一面对本发明的实施方式的倒装芯片接合装置(电子零件安装装置)进行说明。图1是表示本发明的实施方式的倒装芯片接合装置的构成的构成图。如图1所示，倒装芯片接合装置100例示性地具备：接合平台50，将半导体裸片80及基板52的至少一者吸附固定于上表面上；以及安装头60，相对于接合平台50，在垂直方向(图1中所示的上下方向)或水平方向上由未图示的驱动装置驱动。
安装头60例示性地具备：附件10，具有真空吸附半导体裸片70的表面14(吸附面)；接合加热器20，配置于附件10的与表面14相反侧的上表面18上，对附件10及吸附于表面14上的半导体裸片70进行加热；本体部31，在下表面33(端面)上保持接合加热器20；第1开口部19，形成于附件10的表面14上；第2开口部35，形成本体部31的与下表面33不同的面上；吸引路径，具有在本体部31内使自第1开口部19所吸引的气体的流路弯曲的第1弯曲部37，并作为贯穿附件10、接合加热器20、及本体部31的内部的贯穿孔，且所述吸引路径将自第1开口部19所吸引的气体在第2开口部35排出至外部(例如，包含形成于附件10中的真空吸引孔16、形成于接合加热器20中的真空吸引孔22、及形成于本体部31中的真空吸引路径32的路径)；以及防滴下部90，形成于吸引路径中，并抑制气体凝结而成的液滴滴下至接合加热器20上。本体部31连接于未图示的驱动装置上。
图2A是本发明的实施方式的倒装芯片接合装置中所使用的附件的俯视图。图2B是本发明的实施方式的倒装芯片接合装置中所使用的附件的剖面图。图2C是本发明的实施方式的倒装芯片接合装置中所使用的附件的底面图。如图2A～图2C所示，附件10例示性地具备：四角板状的基底11；以及岛状物13，自基底11的下表面12呈四角台座状地突出，并在表面14上真空吸附图1中所示的半导体裸片70。用以真空吸引半导体裸片70的真空吸引孔16以贯穿基底11与岛状物13的方式设置于附件10的中心。
回到图1，接合加热器20例如为将包含铂或钨等的发热电阻器嵌入至氮化铝等的陶瓷的内部而成的四角板状构件。接合加热器20的大小与附件10大致相同。再者，包含陶瓷的接合加热器20的导热率例如为100W/m·K以上。
图3A是本发明的实施方式的倒装芯片接合装置中所使用的接合加热器的俯视图。图3B是本发明的实施方式的倒装芯片接合装置中所使用的接合加热器的剖面图。图3C是本发明的实施方式的倒装芯片接合装置中所使用的接合加热器的底面图。如图3A～图3C所示，在接合加热器20的中心设置有与附件10的真空吸引孔16连通的真空吸引孔22。另外，如图1及图3B所示，接合加热器20的上表面27与本体部31的下表面33连接。
回到图1，本体部31例如为包含含有铁或铬等的不锈钢等所构成的构件。包含不锈钢等的本体部31的导热率例如为几十W/m·K以下，比接合加热器20的导热率小。即，本体部31与接合加热器20包含具有不同的导热率的材料而构成。
设置于本体部31中的真空吸引路径32通过中间配置有电磁阀43的配管41，经由第2开口部35而连接于真空泵44上。若驱动真空泵44，则连接有配管41的真空吸引路径32与接合加热器20的真空吸引孔22变成真空状态，附件10被真空吸附于接合加热器20的下表面26上。另外，当打开电磁阀43时，连接有配管41的本体部31的真空吸引路径32、与真空吸引路径32连通的接合加热器20的真空吸引孔22、及与真空吸引孔22连通的附件10的真空吸引孔16变成真空状态。由此，半导体裸片70的突出电极72之侧的面被真空吸附于附件10的岛状物13的表面14上。
图4是表示本发明的实施方式的另一倒装芯片接合装置的构成的构成图。如图4所示，安装头60的防滴下部90具备储存部90A，所述储存部90A配置于比真空吸引路径32(吸引路径)的第1弯曲部37更靠近气体的吸引方向下游侧，并储存气体凝结而成的液滴或液滴凝固而成的固体。真空吸引路径32进而具备设置于比第1弯曲部37更靠近气体的吸引方向下游侧的第2弯曲部38，防滴下部90横跨第1弯曲部37及第2弯曲部38来设置。储存部90A也能够以配置于第2弯曲部38上的方式构成。另外，本体部31也可在穿过储存部90A的分割面DF上，上下可分割地构成。此处，将通过分割面DF所分割的本体部31的上部设为上部本体部31A，将下部设为下部本体部31B。
图5是自图4的V-V方向观察的本体部31的剖面图。如图4及图5所示，储存部90A在与真空吸引孔16、真空吸引孔22的轴方向正交的本体部31的剖面视中，配置在与真空吸引孔16、真空吸引孔22的位置不同的位置上。此处，储存部90A是以立体形状构成。另外，设置于本体部31中的真空吸引路径32是以与设置于接合加热器20中的与附件10的真空吸引孔16连通的真空吸引孔22连通的方式构成。
图6是表示本发明的实施方式的另一倒装芯片接合装置的构成的构成图。如图6所示，防滴下部90具备路径加热器90B，所述路径加热器90B在真空吸引路径32(吸引路径)中，配置于作为贯穿接合加热器20的贯穿孔的真空吸引孔22(贯穿孔)的正上方部即第1弯曲部37上，并将气体加热至气体的凝结温度以上的温度。路径加热器90B在第1弯曲部37中将气体加热至气体的凝结温度以上的温度，因此可防止气体在第1弯曲部37附近液化。
图7中，防滴下部90具备冷却部90C，所述冷却部90C配置于比真空吸引路径32(吸引路径)的第1弯曲部37更靠近气体的吸引方向下游侧，并将气体冷却至气体的凝结温度以下的温度。真空吸引路径32进而具备设置于比第2弯曲部38更靠近气体的吸引方向下游侧的第3弯曲部39，防滴下部90横跨第1弯曲部37、第2弯曲部38及第3弯曲部39来设置。冷却部90C也能够以配置于第3弯曲部39上的方式构成。如图7所示，本体部31沿着气体的吸引方向依次具备路径加热器90B、储存部90A、及冷却部90C。
再者，防滴下部90也可具备凝结部来代替冷却部90C，所述凝结部配置于比真空吸引路径32的第1弯曲部37更靠近气体的吸引方向下游侧，并增加气体的流体阻力。另外，防滴下部90也可除冷却部90C以外，进而具备所述凝结部。冷却部90C及凝结部可促进气体的凝结，经液化者被储存于储存部90A中。
参照图8～图10，对利用本实施方式的倒装芯片接合装置100，在将突出电极82形成在裸片本体81的上表面上的第一段的半导体裸片80上安装第二段的半导体裸片70的步骤进行说明，所述第二段的半导体裸片70在裸片本体71的一侧的面上形成突出电极72，在另一侧的面上形成突出电极73，进而在突出电极73的前端通过焊料等来形成凸块74，且在设置有突出电极73的另一侧的面上贴附有NCF 75。再者，突出电极72、突出电极73例如也可包含铜等。
图8是表示使用本发明的实施方式的倒装芯片接合装置100将在两面配置有电极的半导体裸片70堆叠安装的步骤之中，使第二段的半导体裸片70吸附于附件10上的状态的说明图。如图8所示，将第一段的半导体裸片80配置于接合平台50的上表面上。另外，驱动图1中所示的真空泵44，使连接有配管41的真空吸引路径32与接合加热器20的真空吸引孔22变成真空状态，而使附件10的上表面18真空吸附于接合加热器20的下表面26上。
继而，使安装头60移动至以突出电极72成为上侧的方式载置于未图示的半导体裸片70的反转、交接装置上的半导体裸片70上。而且，打开电磁阀43，使连接有配管41的本体部31的真空吸引路径32、与真空吸引路径32连通的接合加热器20的真空吸引孔22、及与真空吸引孔22连通的附件10的真空吸引孔16变成真空状态。由此，半导体裸片70的突出电极72之侧的面被真空吸附于附件10的岛状物13的表面14上。
其后，若以半导体裸片70的位置与配置于接合平台50上的半导体裸片80的位置一致的方式使安装头60移动，则倒装芯片接合装置100变成如图8所示的状态。在所述状态下，附件10的温度例如为100℃左右，凸块74未变成熔融状态。另外，NCF 75也未变成低粘度状态。
如图8所示，在附件10的表面14与半导体裸片70的裸片本体71之间，空出仅为突出电极72的高度的间隙。由此，即便是将半导体裸片70真空吸附于附件10的表面14上的状态，如图8中所示的箭头A1所示，半导体裸片70的周围的空气也自所述间隙进入至真空吸引孔16的内部。
图9是表示在图8所示的步骤后，使附件10下降而将半导体裸片70的电极按压于半导体裸片80的电极上，并且利用接合加热器20对半导体裸片70进行加热的状态的说明图。如图9所示，利用未图示的驱动装置，如空心箭头A2所示那样使安装头60下降，将吸附于附件10的表面14上的半导体裸片70的凸块74按压在真空吸附于接合平台50上的半导体裸片80的突出电极82上，并且利用接合加热器20将半导体裸片70加热至250℃左右为止来使凸块74熔融。
于是，贴附于半导体裸片70的配置有突出电极73之侧的NCF 75低粘度化，并填充半导体裸片80的裸片本体81与半导体裸片70的裸片本体71之间的间隙。其后，通过经熔融的凸块74来将半导体裸片80的突出电极82与半导体裸片70的突出电极73金属接合，填充半导体裸片80的裸片本体81与半导体裸片70的裸片本体71之间的间隙的树脂热硬化而变成热硬化树脂75a。
此时，NCF 75的气化成分变成气体G，并滞留于半导体裸片70的周围。所述滞留的气体如箭头A1所示，存在流入附件10的真空吸引孔16、接合加热器20的真空吸引孔22、本体部31的真空吸引路径32中之虞。但是，所流入的气体G例如由设置于真空吸引路径32中的路径加热器90B加热，于在真空吸引路径32内上升的途中(例如，真空吸引路径32中的由虚线C所围成的范围)不会液化，而直接在真空吸引路径32内上升。上升的气体G由设置于真空吸引路径32中的冷却部90C冷却，由此液化(凝结)。而且，液滴L自冷却部90C滴下，并作为储存物91而储存于真空吸引路径32中所设置的储存部90A中，或者液体凝固而成的固体作为储存物91而储存于储存部90A中。
图10是表示在图9所示的步骤后，使附件上升的状态的说明图。如图10所示，若在关闭电磁阀43，停止真空吸引路径32的吸引后，通过未图示的驱动装置如空心箭头A3所示那样使安装头60上升，则半导体裸片80与接合于半导体裸片80上的半导体裸片70残留于接合平台50上。而且，若温度下降，则经熔融的凸块74凝固而变成接合金属74b，热硬化树脂75a硬化而变成填充半导体裸片80的裸片本体81的上表面与半导体裸片70的裸片本体71的下表面的间隙的填充树脂75c。
如图10所示，即便是将半导体裸片70安装于半导体裸片80上，并使安装头60上升的状态，也存在在图9中所示的步骤时产生的气体残存，如箭头A4所示，所述气体流入本体部31的真空吸引路径32中之虞。但是，如使用图9已说明那样，气体由设置于真空吸引路径32中的路径加热器90B加热，在上升的途中(例如，真空吸引路径32中的由虚线C所围成的范围)不会液化，而直接在真空吸引路径32内上升。上升的气体由设置于真空吸引路径32中的冷却部90C冷却，由此液化(凝结)。而且，凝结的液体作为储存物91而储存于真空吸引路径32中所设置的储存部90A中，或者所述液体凝固而成的固体作为储存物91而储存于储存部90A中。
图11是表示本发明的实施方式的倒装芯片接合装置中所使用的本体的构成的另一例的构成图。如图11所示，本体部31是在穿过储存部90A的分割面DF上，上下可分割地构成。在本体部31中，储存部90A的底部95设置于通过分割面DF所分割的下部本体部31B中。另外，本体部31在通过分割面DF所分割的上部本体部31A中具备储存部90A中的第3开口部36，第3开口部36是以朝向气体的吸引方向下游侧逐渐地变小的方式形成为锥状，且以第3开口部36的一端面S1的直径大于第3开口部36的吸引方向下游侧的另一端面S2的直径的方式构成。
图12是自图11的XII-XII方向观察的本体部的剖面图。如图11及图12所示，储存部90A是以沿着真空吸引路径32的外周的方式配置。在此种储存部90A中，气体凝结而成的液体顺着储存部90A的壁面朝向底部95，因此在与图10中所示的真空吸引孔16、真空吸引孔22的轴方向正交的本体部31的剖面视中，可在与真空吸引孔16、真空吸引孔22的位置不同的位置上适当地储存异物。
图13是表示本发明的实施方式的倒装芯片接合装置中所使用的本体的构成的另一例的构成图。如图13所示，本体部31也能够以在真空吸引路径32中，在与设置有储存部90A的位置相向的位置上具备突起部90D的方式构成。由此，在真空吸引路径32中设置有储存部90A的附近的长度变长，由此可自然冷却气体。因此，无需具备如图7～图10中所示的冷却部90C，因此本体部31的制造变得容易，且可削减本体部31的制造成本。
如以上所说明那样，设置于本体部31中的真空吸引路径32具备防滴下部90。由此，即便流入真空吸引路径32中的气体凝结，也可防止液体及所述液体凝固而成的固体滴下至接合加热器20上。因此，可防止包含气体成分的树脂将真空吸引孔22密封，因此可抑制安装头60的污损。
[其他实施方式]
如所述那样通过实施方式来记载本发明，但构成所述公开的一部分的记述及附图不应理解为限定所述发明人。根据所述公开，各种代替实施方式、实施例及运用技术对于本领域从业人员而言应该变得明确。
在所述实施方式中，将真空吸引孔16、真空吸引孔22及真空吸引路径32设为长圆形状而进行了说明，但真空吸引孔的形状并不限定于此，例如也可由长方形孔、椭圆孔构成。
另外，对将NCF 75用于半导体裸片70与半导体裸片80的接合的例子进行了说明，但并不限定于此，也可使用其他种类的树脂。
符号的说明
10：附件
11：基底
12、26、33：下表面
13：岛状物
14：表面
16、22：真空吸引孔
18、27：上表面
19：第1开口部
20：接合加热器
31：本体部
32：真空吸引路径
35：第2开口部
36：第3开口部
37：第1弯曲部
38：第2弯曲部
39：第3弯曲部
41：配管
43：电磁阀
44：真空泵
50：接合平台
60：安装头
70、80：半导体裸片
71、81：裸片本体
72、73、82：突出电极
74：凸块
74b：接合金属
75：非导电性膜(NCF)
75a：热硬化树脂
75c：填充树脂
90：防滴下部
90A：储存部
90B：路径加热器
90、90C：冷却部
90D：突起部
91：储存物
95：底部
100：倒装芯片接合装置

Claims (13)

1.一种安装头，其用于将半导体裸片的电极与基板或其他半导体裸片的电极进行接合的电子零件安装装置，所述安装头包括：
附件，具有吸附半导体裸片的吸附面；
接合加热器，配置于所述附件的与所述吸附面相反侧的面上，对所述附件及所述半导体裸片进行加热；
本体部，在端面上保持所述接合加热器；
第1开口部，形成于所述附件的所述吸附面上；
第2开口部，形成于所述本体部的与所述端面不同的面上；
吸引路径，具有在所述本体部内使自所述第1开口部所吸引的气体的流路弯曲的第1弯曲部，并贯穿所述附件、所述接合加热器、及所述本体部的内部，且所述吸引路径将自所述第1开口部所吸引的气体在所述第2开口部排出至外部；以及
防滴下部，形成于所述吸引路径中，并抑制所述气体凝结而成的液滴滴下至所述接合加热器上。
2.根据权利要求1所述的安装头，其中所述防滴下部包括储存部，所述储存部配置于比所述吸引路径的所述第1弯曲部更靠近所述气体的吸引方向下游侧，并储存所述气体凝结而成的所述液滴或所述液滴凝固而成的固体。
3.根据权利要求1所述的安装头，其中所述防滴下部包括路径加热器，所述路径加热器在所述吸引路径中配置在贯穿所述接合加热器的贯穿孔的正上方部，并将所述气体加热至所述气体的凝结温度以上的温度。
4.根据权利要求1所述的安装头，其中所述防滴下部包括冷却部，所述冷却部配置于比所述吸引路径的所述第1弯曲部更靠近所述气体的吸引方向下游侧，并将所述气体冷却至所述气体的凝结温度以下的温度。
5.根据权利要求1所述的安装头，其中所述防滴下部包括凝结部，所述凝结部配置于比所述吸引路径的所述第1弯曲部更靠近所述气体的吸引方向下游侧，并增加所述气体的流体阻力。
6.根据权利要求1所述的安装头，其中所述吸引路径还包括设置于比所述第1弯曲部更靠近所述气体的吸引方向下游侧的第2弯曲部，
所述防滴下部横跨所述第1弯曲部及所述第2弯曲部来设置。
7.根据权利要求6所述的安装头，其中储存所述气体凝结而成的所述液滴或所述液滴凝固而成的固体的储存部配置于所述第2弯曲部上。
8.根据权利要求1至7中任一项所述的安装头，其中所述本体部是在穿过储存所述气体凝结而成的所述液滴或所述液滴凝固而成的固体的储存部的分割面上，上下能够分割地构成。
9.根据权利要求8所述的安装头，其中所述储存部的底部设置于通过所述分割面所分割的下部本体部中。
10.根据权利要求8所述的安装头，其中所述本体部在通过所述分割面所分割的上部本体部中具备第3开口部，
所述第3开口部是以朝向所述气体的吸引方向下游侧逐渐地变小的方式形成为锥状，所述第3开口部的一端面的直径大于所述第3开口部的所述吸引方向下游侧的另一端面的直径。
11.根据权利要求1所述的安装头，其中所述本体部沿着所述气体的吸引方向依次包括：路径加热器，在所述吸引路径中配置在贯穿所述接合加热器的贯穿孔的正上方部，并将所述气体加热至所述气体的凝结温度以上的温度；储存部，配置于比所述吸引路径的所述第1弯曲部更靠近所述气体的吸引方向下游侧，并储存所述气体凝结而成的所述液滴或所述液滴凝固而成的固体；以及冷却部，配置于比所述吸引路径的所述第1弯曲部更靠近所述气体的吸引方向下游侧，并将所述气体冷却至所述气体的凝结温度以下的温度。
12.根据权利要求1所述的安装头，其中所述本体部在所述吸引路径中，在与设置有储存所述气体凝结而成的所述液滴或所述液滴凝固而成的固体的储存部的位置相向的位置上还包括突起部。
13.根据权利要求1所述的安装头，其中所述接合加热器与所述本体部包含具有不同的导热率的材料而构成。
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