CN102683301B - 包括底座的半导体器件 - Google Patents

包括底座的半导体器件 Download PDF

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Publication number
CN102683301B
CN102683301B CN201210068095.1A CN201210068095A CN102683301B CN 102683301 B CN102683301 B CN 102683301B CN 201210068095 A CN201210068095 A CN 201210068095A CN 102683301 B CN102683301 B CN 102683301B
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base
cooling element
semiconductor device
couple
sealant
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CN102683301A (zh
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A.克里斯特曼
P.琼斯
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Infineon Technologies AG
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Infineon Technologies AG
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    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
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    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
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Abstract

本发明涉及包括底座的半导体器件。一种半导体装置包括半导体芯片和耦接到半导体芯片的底座。该底座包括上部分和下部分。上部分具有与下部分的侧壁相交的底表面。该半导体装置包括耦接到底座的冷却元件。冷却元件具有与底座的上部分的底表面直接接触的第一表面、与底座的下部分的侧壁直接接触的第二表面、以及与第一表面平行并且与底座的下部分的底表面对准的第三表面。

Description

包括底座的半导体器件
背景技术
功率电子模块是用在功率电子电路中的半导体封装。功率电子模块典型地用在车辆和工业应用中，诸如用在逆变器和整流器中。功率电子模块内包括的半导体部件典型地是绝缘栅双极型晶体管（IGBT）半导体芯片或者金属-氧化物-半导体场效应晶体管（MOSFET）半导体芯片。IGBT和MOSFET半导体芯片具有变化的电压和电流额定值。一些功率电子模块还包括用于过压保护的半导体封装中的额外的半导体二极管（即，续流二极管）。
通常，使用两个不同的功率电子模块。一个设计用于较高功率的应用而另一个设计用于较低功率的应用。对于较高功率的应用，功率电子模块典型地包括集成在单个基板上的若干个半导体芯片。基板典型地包括绝缘陶瓷基板，诸如Al2O3、AlN、Si3N4或者其他适当的材料，以使功率电子模块绝缘。利用纯净的或镀覆的Cu、Al或者其他适当的材料至少使陶瓷基板的顶面金属化以提供半导体芯片的电接触和机械接触。典型地使用直接铜接合（DCB）工艺、直接铝接合工艺（DAB）工艺或者活性金属钎焊（AMB）工艺将金属层接合到陶瓷基板。
典型地，利用Sn-Pb、Sn-Ag、Sn-Ag-Cu或者另一适当的焊料合金的软焊用于将半导体芯片连结到金属化陶瓷基板。典型地，若干个基板组合到平面金属底座上。在该情况下，还利用纯净的或镀覆的Cu、Al或者其他适当的材料使陶瓷基板的背面金属化以将基板连结到平面金属底座。为了将基板连结到平面金属底座，典型地使用利用Sn-Pb、Sn-Ag、Sn-Ag-Cu或者另一适当的焊料合金的软焊。平面金属底座可以进而附接到冷却元件，冷却剂可以通过该冷却元件流动以防止操作期间的功率电子模块的过热。
随着日益增加的在苛刻环境（例如，汽车应用）中使用功率电子装置的期望以及正在进行的半导体芯片集成，外部和内部耗散的热继续增加。因此，存在增长的对能够以高达和超过200℃的内部和外部温度进行操作的高温功率电子模块的需求。此外，功率电子装置的电流密度继续增加，这导致了功率损耗密度的增加。因此，经由冷却元件进行的用于防止过热的功率电子装置的液体冷却正变得日益重要。
出于这些和其他原因，需要本发明。
发明内容
一个实施例提供了一种半导体装置。该半导体装置包括半导体芯片和耦接到半导体芯片的底座。该底座包括上部分和下部分。上部分具有与下部分的侧壁相交的底表面。该半导体装置包括耦接到底座的冷却元件。冷却元件具有与底座的上部分的底表面直接接触的第一表面、与底座的下部分的侧壁直接接触的第二表面、以及与第一表面平行并且与底座的下部分的底表面对准的第三表面。
附图说明
附图被包括以提供实施例的进一步理解并且被并入本说明书并构成本说明书的一部分。附图图示了实施例并且连同描述一起用于说明实施例的原理。其他实施例以及实施例的许多预期优点将容易被认识到，因为它们通过参照下面的详细描述而变得更好理解。图中的元件不一定相对彼此按比例绘制。相同的附图标记表示对应的相似部分。
图1图示了半导体装置的一个实施例的横截面视图。
图2图示了冷却元件的一个实施例的横截面视图。
图3A图示了耦接到冷却元件的半导体装置的一个实施例的横截面视图。
图3B图示了耦接到冷却元件的半导体装置的另一实施例的横截面视图。
图4A图示了耦接到冷却元件的半导体装置的另一实施例的横截面视图。
图4B图示了耦接到冷却元件的半导体装置的另一实施例的横截面视图。
图5A图示了耦接到冷却元件的半导体装置的另一实施例的横截面视图。
图5B图示了耦接到冷却元件的半导体装置的另一实施例的横截面视图。
具体实施方式
在下面的详细描述中，参照附图，所述附图形成该详细描述的一部分并且在所述附图中借助于图示示出了其中可以实践本公开的具体实施例。在这一点上，方向性术语，诸如“顶”、“底”、“前”、“后”、“头”、“尾”等，是参照所描述的（一幅或多幅）附图的取向而使用的。由于实施例的部件可以设置在许多不同的取向上，因此方向性术语用于说明的目的而决非限制。要理解，可以利用其他实施例并且可以进行结构或逻辑的改变而不偏离本公开的范围。因此，下面的详细描述不要被视为限制性意义，并且本公开的范围由所附权利要求限定。
要理解，除非另外具体指出，否则这里描述的各种示例性实施例的特征可以彼此组合。
如这里使用的术语“电耦接”并不意味着元件必须直接耦接在一起并且在“电耦接”元件之间可以提供中间元件。
图1图示了半导体装置100的一个实施例的横截面视图。在一个实施例中，半导体装置100是高温（即，高达和超过200℃）高功率电子模块。功率电子模块100包括耦接到结构120的金属底座102。结构120包括烧结的或焊接的连结部126、包括金属表面或层128和132的金属化陶瓷基板130、烧结的或焊接的连结部134、半导体芯片136、接合导线138、电路板140、控制接触142、功率接触144、灌注部146和148以及壳体150。
底座102包括第一或上部分112以及第二或下部分114。第一部分112包括顶表面104和底表面106，底表面106与第二部分114的侧壁108相交。在一个实施例中，第二部分114的侧壁108具有高度116，使得当底座102附接到冷却元件时，底座102延伸到冷却元件的开口中以便冷却剂直线地经过底座。在一个实施例中，销（pin）118从第二部分114的底表面110延伸。销118增加了从结构120和底座102到冷却元件内的冷却剂的热传递。在另一实施例中，不包括销118。底座102和销118由铜、镀镍铜或者其他适当的材料制成。
陶瓷基板130包括Al2O3、AlN、Si3N4或者其他适当的材料。在一个实施例中，陶瓷基板130每个均具有0.2mm至2.0mm的范围内的厚度。金属层128和132包括Cu、Al或者另一适当的材料。在一个实施例中，金属层128和/或132镀有Ni、Ag、Au和/或Pd。在一个实施例中，金属层128和132每个均具有0.1mm至0.6mm的范围内的厚度。烧结的或焊接的连结部126将金属层128连结到金属底座102。烧结的或焊接的连结部134将金属层132连结到半导体芯片136。
半导体芯片136通过接合导线138电耦接到金属层132。接合导线138包括Al、Cu、Al-Mg、Au或者另一适当的材料。在一个实施例中，使用超声导线接合将接合导线138接合到半导体芯片136和金属层132。金属层132电耦接到电路板140和功率接触144。电路板140电耦接到控制接触142。
壳体150封住烧结的或焊接的连结部126、包括金属层128和132的金属化陶瓷基板130、烧结的或焊接的连结部134、半导体芯片136、接合导线138、电路板140、控制接触142的部分、以及功率接触144的部分。壳体150包括工程（technical）塑料或者另一适当的材料。壳体150连结到金属底座102的顶表面104。
灌注材料146在烧结的或焊接的连结部126、包括金属层128和132的金属化陶瓷基板130、烧结的或焊接的连结部134、半导体芯片136以及接合导线138周围在壳体150内填充电路板140下方的区域。灌注材料148在控制接触142的部分以及功率接触144的部分周围在壳体150内填充电路板150上方的区域。灌注材料146和148包括有机硅凝胶或者另一适当的材料。灌注材料146和148防止因介电击穿对功率电子模块100的损坏。
图2图示了冷却元件160的一个实施例的横截面视图。冷却元件160包括第一部分162和附接到第一部分162的第二部分164。第二部分164的底表面168和第一部分162的顶表面178限定了冷却元件的入口174和出口176。入口174和出口176使得冷却剂能够如箭头182所指示的那样流过冷却元件160的空腔184。第二部分164的侧壁170限定了通过第二部分164到达空腔184的开口180。开口180被配置为容纳前面参照图1描述和图示的底座102的下部分114。在一个实施例中，开口180的侧壁170的高度等于底座102的第二部分114的高度116。
密封剂172被布置在第二部分164的表面166中的凹部186内。在一个实施例中，密封剂172是O形环。当底座102附接到冷却元件160时，密封剂172围绕开口180并且提供冷却元件160和底座102之间的密封。密封剂172防止冷却剂从冷却元件160和底座102之间泄漏。在该实施例中，密封剂172被布置为当底座102附接到冷却元件160时与底座102的表面106接触。密封剂172由硅、聚合物或者另一适当的材料制成。
图3A图示了耦接到冷却元件160a的半导体装置100a的一个实施例的横截面视图。在一个实施例中，半导体装置100a包括如前面参照图1描述和图示的结构120。结构120附接到如前面参照图1描述和图示的底座102的顶表面104。底座102耦接到冷却元件160a，其与前面参照图2描述和图示的冷却元件160相似。使用螺钉或者另一适当的附接方法将底座102耦接到冷却元件160a。
在底座102耦接到冷却元件160a的情况下，底座102的表面106与冷却元件160a的表面166接触。底座102的表面106还与密封剂172接触。底座102的侧壁108与冷却元件160a的侧壁170接触。由于底座102的侧壁108的高度和冷却元件160a的侧壁170的高度匹配，因此底座102的底表面110与冷却元件160a的第二部分164的底表面168对准。因此，底座102的底表面110和冷却元件160a的第二部分164的底表面168限定了空腔184的顶部。空腔184的底部由冷却元件160a的第一部分162的顶表面178限定。
由于底座102的底表面110与冷却元件160a的第二部分164的底表面168对准，因此入口174和出口176与空腔184对准。照此，流过冷却元件160a的冷却剂直线地流过底座102。较之如前面参照图1描述和图示的仅由上部分112构成的传统的平面底座，底座102提供了许多优点。
例如，底座102实现的冷却剂的直线流动通过减少对于传统的平面底座可能存在的底座拐角附近的停滞冷却剂的区域，改进了整个底座表面110的冷却。由于入口174、空腔184和出口176的对准，因此较之传统的平面底座，底座102存在通过冷却元件160a的较低的压降。此外，入口174、空腔184和出口176的对准减少了在利用冷却剂填充冷却元件160a期间出现气穴的机会。为了增加底座102的刚度，在冷却元件160a的开口180的区域中添加材料。这不同于传统的平面底座，在传统的平面底座中增加整个底座的厚度以增加刚度。因此，为了实现相同的刚度，用于底座102的材料的体积可以小于用于传统的平面底座的材料的体积。此外，直接位于电部件下面的底座102的质量（mass）充当热容（thermalcapacitor），其改进了半导体装置的热性能。
图3B图示了耦接到冷却元件160a的半导体装置100b的另一实施例的横截面视图。半导体装置100b与前面参照图3A描述和图示的半导体装置100a相似，除了半导体装置100b包括销118。销118从底座102的表面110延伸到冷却元件160a的空腔184中。在一个实施例中，销118与冷却元件160a的第一部分162的表面178接触。在其他实施例中，销118延伸到空腔184中，但是不与冷却元件160a的第一部分162的表面178接触。
图4A图示了耦接到冷却元件160b的半导体装置100a的另一实施例的横截面视图。冷却元件160b与前面参照图3A描述和图示的冷却元件160a相似，除了密封剂172的位置。在该实施例中，密封剂172被布置在冷却元件160b的第二部分164的侧壁170中的凹部187内。因此，密封剂172与底座102的侧壁108接触以防止底座102和冷却元件160b之间的冷却剂的泄漏。图4B图示了耦接到冷却元件160b的半导体装置100b的一个实施例的横截面视图。半导体装置100b与前面参照图4A描述和图示的半导体装置100a相似，除了半导体装置100b包括销118。
图5A图示了耦接到冷却元件160c的半导体装置100c的另一实施例的横截面视图。冷却元件160c与前面参照图3A描述和图示的冷却元件160a相似，除了密封剂172被密封剂190替换。在该实施例中，密封剂190被布置在底座102的表面106和冷却元件160c的第二部分164的表面166之间。在一个实施例中，密封剂190是在将底座102耦接到冷却元件160c之前施加到冷却元件160c或底座102的硅膏或硅胶。在另一实施例中，密封剂190是由硅、聚合物或者另一适当的材料制成的衬垫。
为了容纳密封剂190并且为了仍提供冷却元件160c的第二部分164的底表面168与底座102的底表面110的对准，底座102的第二部分具有的高度117等于冷却元件160c的第二部分164的侧壁170的高度116加上密封剂190的高度192。
图5B图示了耦接到冷却元件160c的半导体装置100d的另一实施例的横截面视图。半导体装置100d与前面参照图5A描述和图示的半导体装置100c相似，除了半导体装置100d包括销118。
实施例提供了一种包括耦接到冷却元件的底座的功率半导体模块。底座被配置为使得当底座附接到冷却元件时冷却剂直线地流过冷却元件并且经过底座。当较之使用传统的平面底座的功率半导体模块时，冷却剂经过底座的直线流动改进了功率半导体模块的热性能。
尽管这里图示和描述了具体实施例，但是本领域的普通技术人员将认识到，在不偏离本公开的范围的情况下，可以用多种替选的和/或等同的实现方案替代所示出和描述的具体实施例。本申请旨在涵盖这里讨论的具体实施例的任何调整或变化。因此，旨在本公开仅受权利要求及其等同物限制。

Claims (19)

1.一种半导体装置，包括：
半导体芯片；
底座，耦接到所述半导体芯片，所述底座包括上部分和下部分，所述上部分具有与所述下部分的侧壁相交的底表面；以及
冷却元件，耦接到所述底座，所述冷却元件具有与所述底座的上部分的底表面直接接触的第一表面、与所述底座的下部分的侧壁直接接触的第二表面、以及与所述第一表面平行并且与所述底座的下部分的底表面对准的第三表面；
多个销，从底座的表面延伸到冷却元件的空腔中，并且与冷却元件的第一部分的表面接触；
其中所述冷却元件包括用于使冷却剂通过所述冷却元件的入口和出口，并且所述入口和出口由所述冷却元件的第三表面限定。
2.根据权利要求1所述的半导体装置，进一步包括：
密封剂，与所述底座和所述冷却元件直接接触。
3.根据权利要求2所述的半导体装置，其中所述密封剂包括O形环。
4.根据权利要求3所述的半导体装置，其中所述冷却元件包括用于布置所述O形环的所述第一表面中的凹部。
5.根据权利要求3所述的半导体装置，其中所述冷却元件包括用于布置所述O形环的所述第二表面中的凹部。
6.根据权利要求2所述的半导体装置，其中所述密封剂包括硅膏和硅胶之一。
7.根据权利要求2所述的半导体装置，其中所述密封剂包括衬垫。
8.根据权利要求1所述的半导体装置，其中所述半导体芯片包括功率半导体芯片。
9.根据权利要求1所述的半导体装置，进一步包括：
基板，将所述半导体芯片耦接到所述底座。
10.根据权利要求9所述的半导体装置，其中所述基板包括金属化陶瓷基板。
11.一种模块，包括：
功率半导体芯片；
底座，耦接到所述功率半导体芯片；以及
冷却元件，耦接到所述底座，所述冷却元件包括用于使冷却剂通过所述冷却元件的入口和出口，所述入口和出口由所述冷却元件的第一表面限定；
多个销，从底座的表面延伸到冷却元件的空腔中，并且与冷却元件的第一部分的表面接触；
其中所述底座的第一表面与所述冷却元件的第一表面对准。
12.根据权利要求11所述的模块，其中所述底座的第二表面与所述冷却元件的第二表面直接接触，所述冷却元件的第二表面与所述冷却元件的第一表面直接相对。
13.根据权利要求12所述的模块，其中所述底座的第三表面从所述底座的第一表面延伸到所述底座的第二表面，所述底座的第三表面与所述冷却元件的第三表面直接接触。
14.根据权利要求11所述的模块，进一步包括：
所述底座和所述冷却元件之间的密封剂，所述密封剂被配置为防止所述底座和所述冷却元件之间的冷却剂的泄漏。
15.根据权利要求14所述的模块，其中所述密封剂包括O形环、衬垫、硅膏和硅胶之一。
16.一种用于制造半导体装置的方法，所述方法包括：
提供冷却元件，所述冷却元件包括入口、出口、所述入口和出口之间的空腔、以及通过所述冷却元件到达所述空腔的开口，所述开口具有侧壁；
使半导体芯片耦接到底座；以及
使所述底座耦接到所述冷却元件，使得所述底座的第一部分延伸到所述开口中并且所述底座的第二部分在所述开口的侧壁上延伸，从而使得所述底座的第一表面与所述冷却元件的第一表面对准；
将多个销从底座的表面延伸到冷却元件的空腔中，以与冷却元件的第一部分的表面接触；
其中所述入口和出口由所述冷却元件的第一表面限定。
17.根据权利要求16所述的方法，进一步包括：
在将所述底座耦接到所述冷却元件之前，将密封剂布置在所述冷却元件和所述底座中的一个上。
18.根据权利要求17所述的方法，其中布置所述密封剂包括在通过所述冷却元件的所述开口周围布置O形环、衬垫、硅膏和硅胶之一。
19.根据权利要求16所述的方法，包括将所述底座耦接到所述冷却元件，使得从所述底座的第一部分延伸的销延伸到所述冷却元件的空腔中。
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