TW201820509A - 安裝頭 - Google Patents

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Publication number
TW201820509A
TW201820509A TW106139877A TW106139877A TW201820509A TW 201820509 A TW201820509 A TW 201820509A TW 106139877 A TW106139877 A TW 106139877A TW 106139877 A TW106139877 A TW 106139877A TW 201820509 A TW201820509 A TW 201820509A
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Taiwan
Prior art keywords
gas
mounting head
heater
suction path
path
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TW106139877A
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English (en)
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TWI661499B (zh
Inventor
西出学人
瀬山耕平
林聖
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日商新川股份有限公司
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Publication of TW201820509A publication Critical patent/TW201820509A/zh
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Publication of TWI661499B publication Critical patent/TWI661499B/zh

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K13/00—Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components
    • H05K13/04—Mounting of components, e.g. of leadless components
    • H05K13/0404—Pick-and-place heads or apparatus, e.g. with jaws
    • H05K13/0408—Incorporating a pick-up tool
    • H05K13/0409—Sucking devices
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    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
    • B23K3/08—Auxiliary devices therefor
    • B23K3/087—Soldering or brazing jigs, fixtures or clamping means
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    • B—PERFORMING OPERATIONS; TRANSPORTING
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
  • Supply And Installment Of Electrical Components (AREA)

Abstract

本發明抑制安裝頭的污損。安裝裝置具備：附件10，具有吸附半導體晶粒70的表面14；加熱器20，配置於附件10的與表面14相反側，對吸附於表面14上的半導體晶粒70進行加熱；吸引孔，一體地貫穿附件10及加熱器20，並於表面14上開口；以及本體部，配置於加熱器20的與附件10相反側，並設置有與吸引孔連通的真空吸引路徑32；真空吸引路徑32具有儲存包含自吸引孔所吸引的氣體凝結而成的液體或該液體凝固而成的固體的異物的儲存部90。

Description

安裝頭
本發明是有關於一種用於將半導體晶粒的電極與基板或其他半導體晶粒的電極接合的電子零件安裝裝置的安裝頭。
先前，利用加熱工具對真空吸附於附件（attachment）上的半導體晶粒進行加熱，並按壓於塗佈有熱硬化性樹脂的基板上來將半導體晶粒安裝於基板上的方法得到廣泛使用。熱硬化性樹脂若得到加熱，則揮發成分氣化，經氣化的揮發成分若得到冷卻，則凝結而變成液體或凝固而變成固體。因此，存在如下的情況：因加熱而氣化的熱硬化性樹脂的揮發成分自加熱工具與附件之間的微小的間隙或附件與半導體晶粒之間的微小的間隙被吸入至真空流路內，於切換閥內部凝結或凝固而引起真空吸引的動作不良，或於加熱工具與附件的間隙中凝固而導致半導體晶粒的加熱不良。因此，提出有如下的方法：利用蓋子將加熱工具與附件的周圍覆蓋，防止自該蓋子中噴出空氣而經氣化的揮發成分被吸入至加熱工具與附件之間的微小的間隙或真空吸引孔中（參照專利文獻1）。 [現有技術文獻] [專利文獻]
[專利文獻1]日本專利特表2012-165313號公報
[發明所欲解決之課題] 然而，近年來，廣泛進行將多段於兩面配置有突出電極的半導體晶粒積層接合的堆疊安裝。於該堆疊安裝中，於接合側的突出電極上形成焊料凸塊，將非導電性膜（Non-Conductive Film，NCF）貼附於其表面上後，使半導體晶粒反轉，並使相反側的面吸附於附件上。其後，若藉由附件來將半導體晶粒的凸塊按壓於其他半導體晶粒的電極上，並且使附件的溫度上升至焊料的熔解溫度（250℃左右）為止，則NCF低黏度化並填充半導體晶粒的間隙。其後，焊料熔融，並且樹脂硬化得以進行。而且，若使附件上升，則焊料的溫度下降並固化，半導體晶粒的堆疊安裝結束。
被堆疊安裝的半導體晶粒在吸附於附件上的面上亦形成有突出電極，因此若使半導體晶粒真空吸附於附件的前端，則在附件的表面與半導體晶粒的表面之間形成僅相當於突出電極的高度的間隙。NCF若被加熱至200℃以上，則丙烯酸單體等分子量小的成分氣化，因此若使附件的溫度上升至焊料的熔融溫度（250℃左右）為止，則NCF的經氣化的成分自該間隙被吸入至附件內部的真空吸引孔中。
此處，於所述堆疊安裝中，當拾取半導體晶粒時，必須將附件的溫度例如冷卻至100℃左右為止，以不使NCF變成低黏度。另外，當吸附半導體晶粒時，真空吸引孔的壓力為真空，但半導體晶粒的接合後，為了自附件上卸除半導體晶粒，必須停止真空。因此，當於吸附半導體晶粒，並將電極接合時將附件加熱至250℃左右為止時，NCF的氣化成分以氣體的狀態被吸引至設置於附件內部的真空吸引孔中。其後，若吸引停止，則被吸引的氣化成分滯留於真空吸引孔中，若附件被冷卻至100℃左右為止，則滯留於內部的經氣化的成分凝結而變成液體這一過程會重複。而且，留在真空吸引孔內的包含氣化成分的大量的液體例如於新的半導體晶粒的堆疊處理等時得到加熱，藉此硬化，並生成包含氣化成分的樹脂，該樹脂蓄積於真空吸引孔中。最終存在如下的問題：所蓄積的樹脂將真空吸引孔密封，並污損安裝頭等。
本發明是鑒於所述情況而成者，其將抑制安裝頭的污損作為目的之一。 [解決課題之手段]
本發明的一形態的安裝頭是用於將半導體晶粒的電極與基板或其他半導體晶粒的電極接合的電子零件安裝裝置的安裝頭，其包括：附件，具有吸附半導體晶粒的吸附面；接合加熱器，配置於所述附件的與所述吸附面相反側的面上，對所述附件及所述半導體晶粒進行加熱；本體部，於端面上保持所述接合加熱器；第1開口部，形成於所述附件的所述吸附面上；第2開口部，形成於所述本體部的與所述端面不同的面上；吸引路徑，具有於所述本體部內使自所述第1開口部所吸引的氣體的流路彎曲的第1彎曲部，並貫穿所述附件、所述接合加熱器、及所述本體部的內部，且所述吸引路徑將自所述第1開口部所吸引的氣體於所述第2開口部排出至外部；以及防滴下部，形成於所述吸引路徑中，並抑制所述氣體凝結而成的液滴滴下至所述接合加熱器上。
於所述安裝頭中，所述防滴下部亦可具備儲存部，所述儲存部配置於比所述吸引路徑的所述第1彎曲部更靠近所述氣體的吸引方向下游側，並儲存所述氣體凝結而成的所述液滴或所述液滴凝固而成的固體。
於所述安裝頭中，所述防滴下部亦可具備路徑加熱器，所述路徑加熱器於所述吸引路徑中配置在貫穿所述接合加熱器的貫穿孔的正上方部，並將所述氣體加熱至所述氣體的凝結溫度以上的溫度。
於所述安裝頭中，所述防滴下部亦可具備冷卻部，所述冷卻部配置於比所述吸引路徑的所述第1彎曲部更靠近所述氣體的吸引方向下游側，並將所述氣體冷卻至所述氣體的凝結溫度以下的溫度。
於所述安裝頭中，所述防滴下部亦可具備凝結部，所述凝結部配置於比所述吸引路徑的所述第1彎曲部更靠近所述氣體的吸引方向下游側，並增加所述氣體的流體阻力。
於所述安裝頭中，所述吸引路徑進而具備設置於比所述第1彎曲部更靠近所述氣體的吸引方向下游側的第2彎曲部，所述防滴下部亦可橫跨所述第1彎曲部及所述第2彎曲部來設置。
於所述安裝頭中，儲存所述氣體凝結而成的所述液滴或所述液滴凝固而成的固體的儲存部亦可配置於所述第2彎曲部上。
於所述安裝頭中，所述本體部亦可於穿過儲存所述氣體凝結而成的所述液滴或所述液滴凝固而成的固體的儲存部的分割面上，上下可分割地構成。
於所述安裝頭中，所述儲存部的底部亦可設置於藉由所述分割面所分割的下部本體部中。
於所述安裝頭中，所述本體部於藉由所述分割面所分割的上部本體部中具備第3開口部，所述第3開口部是以朝向所述氣體的吸引方向下游側逐漸地變小的方式形成為錐狀，亦能夠以所述第3開口部的一端面的直徑大於所述第3開口部的所述吸引方向下游側的另一端面的直徑的方式構成。
於所述安裝頭中，所述本體部亦可沿著所述氣體的吸引方向依次具備：路徑加熱器，於所述吸引路徑中配置在貫穿所述接合加熱器的貫穿孔的正上方部，並將所述氣體加熱至所述氣體的凝結溫度以上的溫度；儲存部，配置於比所述吸引路徑的所述第1彎曲部更靠近所述氣體的吸引方向下游側，並儲存所述氣體凝結而成的所述液滴或所述液滴凝固而成的固體；以及冷卻部，配置於比所述吸引路徑的所述第1彎曲部更靠近所述氣體的吸引方向下游側，並將所述氣體冷卻至所述氣體的凝結溫度以下的溫度。
於所述安裝頭中，所述本體部亦可於所述吸引路徑中，在與設置有儲存所述氣體凝結而成的所述液滴或所述液滴凝固而成的固體的儲存部的位置對向的位置上進而具備突起部。
於所述安裝頭中，所述接合加熱器與所述本體部亦可包含具有不同的導熱率的材料而構成。 [發明的效果]
根據本發明，可抑制安裝頭的污損。
以下，參照圖式對本發明的一實施形態進行說明。但是，以下所說明的實施形態始終是例示，並無排除以下未明示的各種變形或技術的應用的意圖。即，本發明可於不脫離其主旨的範圍內進行各種變形而實施。另外，於一連串的圖式的記載中，對同一或類似的部分標註同一或類似的符號來表示。
一面參照圖1～圖4，一面對本發明的實施形態的覆晶接合裝置（電子零件安裝裝置）進行說明。圖1是表示本發明的實施形態的覆晶接合裝置的構成的構成圖。如圖1所示，覆晶接合裝置100例示性地具備：接合平台50，將半導體晶粒80及基板52的至少一者吸附固定於上表面上；以及安裝頭60，相對於接合平台50，於垂直方向（圖1中所示的上下方向）或水平方向上由未圖示的驅動裝置驅動。
安裝頭60例示性地具備：附件10，具有真空吸附半導體晶粒70的表面14（吸附面）；接合加熱器20，配置於附件10的與表面14相反側的上表面18上，對附件10及吸附於表面14上的半導體晶粒70進行加熱；本體部31，於下表面33（端面）上保持接合加熱器20；第1開口部19，形成於附件10的表面14上；第2開口部35，形成本體部31的與下表面33不同的面上；吸引路徑，作為具有於本體部31內使自第1開口部19所吸引的氣體的流路彎曲的第1彎曲部37，並貫穿附件10、接合加熱器20、及本體部31的內部的貫穿孔，且所述吸引路徑將自第1開口部19所吸引的氣體於第2開口部35排出至外部（例如，包含形成於附件10中的真空吸引孔16、形成於接合加熱器20中的真空吸引孔22、及形成於本體部31中的真空吸引路徑32的路徑）；以及防滴下部90，形成於吸引路徑中，並抑制氣體凝結而成的液滴滴下至接合加熱器20上。本體部31連接於未圖示的驅動裝置上。
圖2A是本發明的實施形態的覆晶接合裝置中所使用的附件的俯視圖。圖2B是本發明的實施形態的覆晶接合裝置中所使用的附件的剖面圖。圖2C是本發明的實施形態的覆晶接合裝置中所使用的附件的底面圖。如圖2A～圖2C所示，附件10例示性地具備：四角板狀的基底11；以及島狀物13，自基底11的下表面12呈四角台座狀地突出，並於表面14上真空吸附圖1中所示的半導體晶粒70。用以真空吸引半導體晶粒70的真空吸引孔16以貫穿基底11與島狀物13的方式設置於附件10的中心。
回到圖1，接合加熱器20例如為將包含鉑或鎢等的發熱電阻器嵌入至氮化鋁等的陶瓷的內部而成的四角板狀構件。接合加熱器20的大小與附件10大致相同。再者，包含陶瓷的接合加熱器20的導熱率例如為100 W/m・K以上。
圖3A是本發明的實施形態的覆晶接合裝置中所使用的接合加熱器的俯視圖。圖3B是本發明的實施形態的覆晶接合裝置中所使用的接合加熱器的剖面圖。圖3C是本發明的實施形態的覆晶接合裝置中所使用的接合加熱器的底面圖。如圖3A～圖3C所示，於接合加熱器20的中心設置有與附件10的真空吸引孔16連通的真空吸引孔22。另外，如圖1及圖3B所示，接合加熱器20的上表面27與本體部31的下表面33連接。
回到圖1，本體部31例如為包含含有鐵或鉻等的不鏽鋼等所構成的構件。包含不鏽鋼等的本體部31的導熱率例如為幾十W/m・K以下，比接合加熱器20的導熱率小。即，本體部31與接合加熱器20包含具有不同的導熱率的材料而構成。
設置於本體部31中的真空吸引路徑32藉由中間配置有電磁閥43的配管41，經由第2開口部35而連接於真空泵44上。若驅動真空泵44，則連接有配管41的真空吸引路徑32與接合加熱器20的真空吸引孔22變成真空狀態，附件10被真空吸附於接合加熱器20的下表面26上。另外，當打開電磁閥43時，連接有配管41的本體部31的真空吸引路徑32、與真空吸引路徑32連通的接合加熱器20的真空吸引孔22、及與真空吸引孔22連通的附件10的真空吸引孔16變成真空狀態。藉此，半導體晶粒70的突出電極72之側的面被真空吸附於附件10的島狀物13的表面14上。
圖4是表示本發明的實施形態的另一覆晶接合裝置的構成的構成圖。如圖4所示，安裝頭60的防滴下部90具備儲存部90A，所述儲存部90A配置於比真空吸引路徑32（吸引路徑）的第1彎曲部37更靠近氣體的吸引方向下游側，並儲存氣體凝結而成的液滴或液滴凝固而成的固體。真空吸引路徑32進而具備設置於比第1彎曲部37更靠近氣體的吸引方向下游側的第2彎曲部38，防滴下部90橫跨第1彎曲部37及第2彎曲部38來設置。儲存部90A亦能夠以配置於第2彎曲部38上的方式構成。另外，本體部31亦可於穿過儲存部90A的分割面DF上，上下可分割地構成。此處，將藉由分割面DF所分割的本體部31的上部設為上部本體部31A，將下部設為下部本體部31B。
圖5是自圖4的V-V方向觀察的本體部31的剖面圖。如圖4及圖5所示，儲存部90A在與真空吸引孔16、真空吸引孔22的軸方向正交的本體部31的剖面視中，配置在與真空吸引孔16、真空吸引孔22的位置不同的位置上。此處，儲存部90A是以立體形狀構成。另外，設置於本體部31中的真空吸引路徑32是以與設置於接合加熱器20中的與附件10的真空吸引孔16連通的真空吸引孔22連通的方式構成。
圖6是表示本發明的實施形態的另一覆晶接合裝置的構成的構成圖。如圖6所示，防滴下部90具備路徑加熱器90B，所述路徑加熱器90B於真空吸引路徑32（吸引路徑）中，配置於作為貫穿接合加熱器20的貫穿孔的真空吸引孔22（貫穿孔）的正上方部即第1彎曲部37上，並將氣體加熱至氣體的凝結溫度以上的溫度。路徑加熱器90B於第1彎曲部37中將氣體加熱至氣體的凝結溫度以上的溫度，因此可防止氣體於第1彎曲部37附近液化。
圖7中，防滴下部90具備冷卻部90C，所述冷卻部90C配置於比真空吸引路徑32（吸引路徑）的第1彎曲部37更靠近氣體的吸引方向下游側，並將氣體冷卻至氣體的凝結溫度以下的溫度。真空吸引路徑32進而具備設置於比第2彎曲部38更靠近氣體的吸引方向下游側的第3彎曲部39，防滴下部90橫跨第1彎曲部37、第2彎曲部38及第3彎曲部39來設置。冷卻部90C亦能夠以配置於第3彎曲部39上的方式構成。如圖7所示，本體部31沿著氣體的吸引方向依次具備路徑加熱器90B、儲存部90A、及冷卻部90C。
再者，防滴下部90亦可具備凝結部來代替冷卻部90C，所述凝結部配置於比真空吸引路徑32的第1彎曲部37更靠近氣體的吸引方向下游側，並增加氣體的流體阻力。另外，防滴下部90亦可除冷卻部90C以外，進而具備該凝結部。冷卻部90C及凝結部可促進氣體的凝結，經液化者被儲存於儲存部90A中。
參照圖8～圖10，對利用本實施形態的覆晶接合裝置100，於將突出電極82形成在晶粒本體81的上表面上的第一段的半導體晶粒80上安裝第二段的半導體晶粒70的步驟進行說明，所述第二段的半導體晶粒70於晶粒本體71的一側的面上形成突出電極72，於另一側的面上形成突出電極73，進而於突出電極73的前端藉由焊料等來形成凸塊74，且於設置有突出電極73的另一側的面上貼附有NCF 75。再者，突出電極72、突出電極73例如亦可包含銅等。
圖8是表示使用本發明的實施形態的覆晶接合裝置100將於兩面配置有電極的半導體晶粒70堆疊安裝的步驟之中，使第二段的半導體晶粒70吸附於附件10上的狀態的說明圖。如圖8所示，將第一段的半導體晶粒80配置於接合平台50的上表面上。另外，驅動圖1中所示的真空泵44，使連接有配管41的真空吸引路徑32與接合加熱器20的真空吸引孔22變成真空狀態，而使附件10的上表面18真空吸附於接合加熱器20的下表面26上。
繼而，使安裝頭60移動至以突出電極72成為上側的方式載置於未圖示的半導體晶粒70的反轉、交接裝置上的半導體晶粒70上。而且，打開電磁閥43，使連接有配管41的本體部31的真空吸引路徑32、與真空吸引路徑32連通的接合加熱器20的真空吸引孔22、及與真空吸引孔22連通的附件10的真空吸引孔16變成真空狀態。藉此，半導體晶粒70的突出電極72之側的面被真空吸附於附件10的島狀物13的表面14上。
其後，若以半導體晶粒70的位置與配置於接合平台50上的半導體晶粒80的位置一致的方式使安裝頭60移動，則覆晶接合裝置100變成如圖8所示的狀態。於該狀態下，附件10的溫度例如為100℃左右，凸塊74未變成熔融狀態。另外，NCF 75亦未變成低黏度狀態。
如圖8所示，在附件10的表面14與半導體晶粒70的晶粒本體71之間，空出僅為突出電極72的高度的間隙。藉此，即便是將半導體晶粒70真空吸附於附件10的表面14上的狀態，如圖8中所示的箭頭A1所示，半導體晶粒70的周圍的空氣亦自所述間隙進入至真空吸引孔16的內部。
圖9是表示於圖8所示的步驟後，使附件10下降而將半導體晶粒70的電極按壓於半導體晶粒80的電極上，並且利用接合加熱器20對半導體晶粒70進行加熱的狀態的說明圖。如圖9所示，利用未圖示的驅動裝置，如空心箭頭A2所示般使安裝頭60下降，將吸附於附件10的表面14上的半導體晶粒70的凸塊74按壓在真空吸附於接合平台50上的半導體晶粒80的突出電極82上，並且利用接合加熱器20將半導體晶粒70加熱至250℃左右為止來使凸塊74熔融。
於是，貼附於半導體晶粒70的配置有突出電極73之側的NCF 75低黏度化，並填充半導體晶粒80的晶粒本體81與半導體晶粒70的晶粒本體71之間的間隙。其後，藉由經熔融的凸塊74來將半導體晶粒80的突出電極82與半導體晶粒70的突出電極73金屬接合，填充半導體晶粒80的晶粒本體81與半導體晶粒70的晶粒本體71之間的間隙的樹脂熱硬化而變成熱硬化樹脂75a。
此時，NCF 75的氣化成分變成氣體G，並滯留於半導體晶粒70的周圍。該滯留的氣體如箭頭A1所示，存在流入附件10的真空吸引孔16、接合加熱器20的真空吸引孔22、本體部31的真空吸引路徑32中之虞。但是，所流入的氣體G例如由設置於真空吸引路徑32中的路徑加熱器90B加熱，於在真空吸引路徑32內上升的途中（例如，真空吸引路徑32中的由虛線C所圍成的範圍）不會液化，而直接於真空吸引路徑32內上升。上升的氣體G由設置於真空吸引路徑32中的冷卻部90C冷卻，藉此液化（凝結）。而且，液滴L自冷卻部90C滴下，並作為儲存物91而儲存於真空吸引路徑32中所設置的儲存部90A中，或者液體凝固而成的固體作為儲存物91而儲存於儲存部90A中。
圖10是表示於圖9所示的步驟後，使附件上升的狀態的說明圖。如圖10所示，若於關閉電磁閥43，停止真空吸引路徑32的吸引後，藉由未圖示的驅動裝置如空心箭頭A3所示般使安裝頭60上升，則半導體晶粒80與接合於半導體晶粒80上的半導體晶粒70殘留於接合平台50上。而且，若溫度下降，則經熔融的凸塊74凝固而變成接合金屬74b，熱硬化樹脂75a硬化而變成填充半導體晶粒80的晶粒本體81的上表面與半導體晶粒70的晶粒本體71的下表面的間隙的填充樹脂75c。
如圖10所示，即便是將半導體晶粒70安裝於半導體晶粒80上，並使安裝頭60上升的狀態，於圖9中所示的步驟時產生的氣體亦殘存，如箭頭A4所示，該氣體亦存在流入本體部31的真空吸引路徑32中之虞。但是，如使用圖9已說明般，氣體由設置於真空吸引路徑32中的路徑加熱器90B加熱，於上升的途中（例如，真空吸引路徑32中的由虛線C所圍成的範圍）不會液化，而直接於真空吸引路徑32內上升。上升的氣體由設置於真空吸引路徑32中的冷卻部90C冷卻，藉此液化（凝結）。而且，凝結的液體作為儲存物91而儲存於真空吸引路徑32中所設置的儲存部90A中，或者該液體凝固而成的固體作為儲存物91而儲存於儲存部90A中。
圖11是表示本發明的實施形態的覆晶接合裝置中所使用的本體的構成的另一例的構成圖。如圖11所示，本體部31是於穿過儲存部90A的分割面DF上，上下可分割地構成。於本體部31中，儲存部90A的底部95設置於藉由分割面DF所分割的下部本體部31B中。另外，本體部31於藉由分割面DF所分割的上部本體部31A中具備儲存部90A中的第3開口部36，第3開口部36是以朝向氣體的吸引方向下游側逐漸地變小的方式形成為錐狀，且以第3開口部36的一端面S1的直徑大於第3開口部36的吸引方向下游側的另一端面S2的直徑的方式構成。
圖12是自圖11的XII-XII方向觀察的本體部的剖面圖。如圖11及圖12所示，儲存部90A是以沿著真空吸引路徑32的外周的方式配置。於此種儲存部90A中，氣體凝結而成的液體順著儲存部90A的壁面朝向底部95，因此在與圖10中所示的真空吸引孔16、真空吸引孔22的軸方向正交的本體部31的剖面視中，可在與真空吸引孔16、真空吸引孔22的位置不同的位置上適當地儲存異物。
圖13是表示本發明的實施形態的覆晶接合裝置中所使用的本體的構成的另一例的構成圖。如圖13所示，本體部31亦能夠以於真空吸引路徑32中，在與設置有儲存部90A的位置對向的位置上具備突起部90D的方式構成。藉此，於真空吸引路徑32中設置有儲存部90A的附近的長度變長，藉此可自然冷卻氣體。因此，無需具備如圖7～圖10中所示的冷卻部90C，因此本體部31的製造變得容易，且可削減本體部31的製造成本。
如以上所說明般，設置於本體部31中的真空吸引路徑32具備防滴下部90。藉此，即便流入真空吸引路徑32中的氣體凝結，亦可防止液體及該液體凝固而成的固體滴下至接合加熱器20上。因此，可防止包含氣體成分的樹脂將真空吸引孔22密封，因此可抑制安裝頭60的污損。
[其他實施形態] 如所述般藉由實施形態來記載本發明，但構成該揭示的一部分的記述及圖式不應理解為限定該發明者。根據該揭示，各種代替實施形態、實施例及運用技術對於本領域從業人員而言應該變得明確。
於所述實施形態中，將真空吸引孔16、真空吸引孔22及真空吸引路徑32設為長圓形狀而進行了說明，但真空吸引孔的形狀並不限定於此，例如亦可由長方形孔、橢圓孔構成。
另外，對將NCF 75用於半導體晶粒70與半導體晶粒80的接合的例子進行了說明，但並不限定於此，亦可使用其他種類的樹脂。
10‧‧‧附件
11‧‧‧基底
12、26、33‧‧‧下表面
13‧‧‧島狀物
14‧‧‧表面
16、22‧‧‧真空吸引孔
18、27‧‧‧上表面
19‧‧‧第1開口部
20‧‧‧接合加熱器
31‧‧‧本體部
31A‧‧‧上部本體部
31B‧‧‧下部本體部
32‧‧‧真空吸引路徑
35‧‧‧第2開口部
36‧‧‧第3開口部
37‧‧‧第1彎曲部
38‧‧‧第2彎曲部
39‧‧‧第3彎曲部
41‧‧‧配管
43‧‧‧電磁閥
44‧‧‧真空泵
50‧‧‧接合平台
52‧‧‧基板
60‧‧‧安裝頭
70、80‧‧‧半導體晶粒
71、81‧‧‧晶粒本體
72、73、82‧‧‧突出電極
74‧‧‧凸塊
74b‧‧‧接合金屬
75‧‧‧非導電性膜（NCF）
75a‧‧‧熱硬化謝脂
75c‧‧‧填充樹脂
90‧‧‧防滴下部
90A‧‧‧儲存部
90B‧‧‧路徑加熱器
90C‧‧‧冷卻部
90D‧‧‧突起部
91‧‧‧儲存物
95‧‧‧底部
100‧‧‧覆晶接合裝置（電子零件安裝裝置）
A1、A4‧‧‧箭頭
A2、A3‧‧‧空心箭頭
C‧‧‧虛線
DF‧‧‧分割面
G‧‧‧氣體
L‧‧‧液滴
S1、S2‧‧‧端面
圖1是表示本發明的實施形態的覆晶接合裝置的構成的構成圖。 圖2A是本發明的實施形態的覆晶接合裝置中所使用的附件的俯視圖。 圖2B是本發明的實施形態的覆晶接合裝置中所使用的附件的剖面圖。 圖2C是本發明的實施形態的覆晶接合裝置中所使用的附件的底面圖。 圖3A是本發明的實施形態的覆晶接合裝置中所使用的接合加熱器的俯視圖。 圖3B是本發明的實施形態的覆晶接合裝置中所使用的接合加熱器的剖面圖。 圖3C是本發明的實施形態的覆晶接合裝置中所使用的接合加熱器的底面圖。 圖4是表示本發明的實施形態的另一覆晶接合裝置的構成的構成圖。 圖5是自圖4的V-V方向觀察的剖面圖。 圖6是表示本發明的實施形態的另一覆晶接合裝置的構成的構成圖。 圖7是表示本發明的實施形態的另一覆晶接合裝置的構成的構成圖。 圖8是表示使用本發明的實施形態的覆晶接合裝置將於兩面配置有電極的半導體晶粒堆疊安裝的步驟之中，使第二段的半導體晶粒吸附於附件上的狀態的說明圖。 圖9是表示於圖8所示的步驟後，使附件下降而將第二段的半導體晶粒的電極按壓於第一段的半導體晶粒的電極上，並且利用接合加熱器對第二段的半導體晶粒進行加熱的狀態的說明圖。 圖10是表示於圖9所示的步驟後，使附件上升的狀態的說明圖。 圖11是表示本發明的實施形態的覆晶接合裝置中所使用的本體的構成的一例的構成圖。 圖12是自圖11的XII-XII方向觀察的剖面圖。 圖13是表示本發明的實施形態的覆晶接合裝置中所使用的本體的構成的一例的構成圖。

Claims (13)

  1. 一種安裝頭，其用於將半導體晶粒的電極與基板或其他半導體晶粒的電極接合的電子零件安裝裝置，所述安裝頭包括： 附件，具有吸附半導體晶粒的吸附面； 接合加熱器，配置於所述附件的與所述吸附面相反側的面上，對所述附件及所述半導體晶粒進行加熱； 本體部，於端面上保持所述接合加熱器； 第1開口部，形成於所述附件的所述吸附面上； 第2開口部，形成於所述本體部的與所述端面不同的面上； 吸引路徑，具有於所述本體部內使自所述第1開口部所吸引的氣體的流路彎曲的第1彎曲部，並貫穿所述附件、所述接合加熱器、及所述本體部的內部，且所述吸引路徑將自所述第1開口部所吸引的氣體於所述第2開口部排出至外部；以及 防滴下部，形成於所述吸引路徑中，並抑制所述氣體凝結而成的液滴滴下至所述接合加熱器上。
  2. 如申請專利範圍第1項所述的安裝頭，其中所述防滴下部包括儲存部，所述儲存部配置於比所述吸引路徑的所述第1彎曲部更靠近所述氣體的吸引方向下游側，並儲存所述氣體凝結而成的所述液滴或所述液滴凝固而成的固體。
  3. 如申請專利範圍第1項或第2項所述的安裝頭，其中所述防滴下部包括路徑加熱器，所述路徑加熱器於所述吸引路徑中配置在貫穿所述接合加熱器的貫穿孔的正上方部，並將所述氣體加熱至所述氣體的凝結溫度以上的溫度。
  4. 如申請專利範圍第1項至第3項中任一項所述的安裝頭，其中所述防滴下部包括冷卻部，所述冷卻部配置於比所述吸引路徑的所述第1彎曲部更靠近所述氣體的吸引方向下游側，並將所述氣體冷卻至所述氣體的凝結溫度以下的溫度。
  5. 如申請專利範圍第1項至第4項中任一項所述的安裝頭，其中所述防滴下部包括凝結部，所述凝結部配置於比所述吸引路徑的所述第1彎曲部更靠近所述氣體的吸引方向下游側，並增加所述氣體的流體阻力。
  6. 如申請專利範圍第1項至第5項中任一項所述的安裝頭，其中所述吸引路徑更包括設置於比所述第1彎曲部更靠近所述氣體的吸引方向下游側的第2彎曲部， 所述防滴下部橫跨所述第1彎曲部及所述第2彎曲部來設置。
  7. 如申請專利範圍第6項所述的安裝頭，其中儲存所述氣體凝結而成的所述液滴或所述液滴凝固而成的固體的儲存部配置於所述第2彎曲部上。
  8. 如申請專利範圍第1項至第7項中任一項所述的安裝頭，其中所述本體部是於穿過儲存所述氣體凝結而成的所述液滴或所述液滴凝固而成的固體的儲存部的分割面上，上下可分割地構成。
  9. 如申請專利範圍第8項所述的安裝頭，其中所述儲存部的底部設置於藉由所述分割面所分割的下部本體部中。
  10. 如申請專利範圍第8項或第9項所述的安裝頭，其中所述本體部於藉由所述分割面所分割的上部本體部中具備第3開口部， 所述第3開口部是以朝向所述氣體的吸引方向下游側逐漸地變小的方式形成為錐狀，所述第3開口部的一端面的直徑大於所述第3開口部的所述吸引方向下游側的另一端面的直徑。
  11. 如申請專利範圍第1項所述的安裝頭，其中所述本體部沿著所述氣體的吸引方向依次包括：路徑加熱器，於所述吸引路徑中配置在貫穿所述接合加熱器的貫穿孔的正上方部，並將所述氣體加熱至所述氣體的凝結溫度以上的溫度；儲存部，配置於比所述吸引路徑的所述第1彎曲部更靠近所述氣體的吸引方向下游側，並儲存所述氣體凝結而成的所述液滴或所述液滴凝固而成的固體；以及冷卻部，配置於比所述吸引路徑的所述第1彎曲部更靠近所述氣體的吸引方向下游側，並將所述氣體冷卻至所述氣體的凝結溫度以下的溫度。
  12. 如申請專利範圍第1項至第11項中任一項所述的安裝頭，其中所述本體部於所述吸引路徑中，在與設置有儲存所述氣體凝結而成的所述液滴或所述液滴凝固而成的固體的儲存部的位置對向的位置上更包括突起部。
  13. 如申請專利範圍第1項至第12項中任一項所述的安裝頭，其中所述接合加熱器與所述本體部包含具有不同的導熱率的材料而構成。
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