CN1101458A - 锯切数字微型镜器件以后的圆片工艺 - Google Patents
锯切数字微型镜器件以后的圆片工艺 Download PDFInfo
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
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Abstract
一种不容许碎屑存在的器件,尤其是例如DMD
这类微机械器件的制造方法,允许锯切圆片后再完成
全部的制造步骤。某些器件太脆弱,不允许器件制造
好后再进行清洗操作。一种解决方案是先锯切和清
洗圆片再完成使器件变脆弱的那些制造步骤。为避
免个别地加工芯片30,将一基底圆片粘贴于切割带
24的背面。此基底圆片使锯切好的芯片30处于对
齐状态,以允许余下的制造步骤以圆片形式进行。
Description
本发明属于集成电路制造工艺领域,具体来说涉及微机械器件的制造,其中包括数字微型镜器件(DMD)的制造。
要使集成电路IC制造工艺的成本具有效益,必须采用半导体大圆片在单一衬底上同时制作许多芯片来大批量地生产各个器件或芯片。制造设备仅对一个圆片而不是许多芯片移动和对准,这减少了原本不可少的处理。对准或对齐对于IC制造工艺中的一些步骤例如光刻和管芯测试是很关键的。大圆片级的工艺全部完成后,就切割或分开成芯片再封装。这些器件从圆片切割下来时产生圆片颗粒和尘埃,它们也称作切割碎屑。这种切割碎屑在将芯片与封装键合前随即从IC表面清洗掉。
微机械器件通常具有的结构太脆弱,难以面对某些标准IC制造步骤而得以留存。数字微型镜器件(DMD)就是例子。转让给本专利申请受让人由洪贝克博士发明的美国专利U.S.5,061,049中说明了DMD。按前面提及专利中的描述,DMD具有一个很小的反光镜,它悬于硅衬底表面上所形成电极上方的气隙上。一旦这种反光镜形成,牺牲物质从此气隙被蚀刻后,DMD就很脆弱。难以做到清洗这种器件而又不损坏反光镜。因而必须切割器件,并在从微型镜腐蚀牺牲物质之前将切割碎屑清洗掉。这就要求清洗和蚀刻步骤,以及任何后续步骤例如钝化和测试步骤,都是在单个芯片而非圆片上进行。
本发明目的在于提供一种以圆片形式对不容许有碎屑的器件进行有效处理的方法。这一目的是在切割损伤前通过将一基底临时粘结在圆片背面进行的。该基底使切割好的芯片保持在一起作为一个圆片直到圆片工艺步骤完成为止。圆片工艺简化了制造过程的处理,并允许该生产流程更为接近于标准集成电路的生产流程。标准圆片工艺技术与分别制造器件的昂贵方法相比,允许成本合算地大量生产器件。
图1是切割前在切割带上的半导体圆片和基底圆片的截面图。
图2是表示一种可替换安装方法的半导体圆片和基底圆片的截面图。
图3是切割后在切割带上的半导体圆片和基底圆片的截面图。
图4是切割带经紫外线照射以便于从芯片上去掉的截面图。
图1示出本发明的一个实施例。器件圆片22与一膜片粘结,通常为一片切割带24,它装在一铝环26上。基底圆片28粘结于切割带的背面。基底圆片28可以由任何材料制成,只要这种材料足够坚固使锯切好的芯片保持互相对齐。这种材料必须足够的薄和重量轻以允许制造设备可以处理所支撑的器件圆片22。本发明的一个实施例中采用硅基底圆片。另一实施例则要求该基底圆片28是象石英这类对于紫外线透明的材料。也可以采用金属基底圆片。
根据所制造的器件和生产该器件所需的步骤,在锯切操作过程中可以要求有一保护层。这可以是一氧化层,一旋涂的光致抗蚀剂层或任何其它将使该器件免受锯切操作、切割碎屑及清洗步骤影响的物质。在DMD制造场合下,生长一薄层氧化层,再形层一光致抗蚀剂旋涂层以防止随后的锯切操作过程中擦伤各反光镜。
基底可以采用双面切割带、粘结剂,或者通过加热该基底圆片至70℃以上再将它压在切割带24的背面上使之安装于切割带24上。粘贴基底圆片28的另一替换方法示于图2中。一片UV(紫外线)分离带38粘贴于贴着器件圆片22的切割带24的背面。此UV带38可以是双面带,或者其背面可以旋涂有粘结剂40。基底圆片28随后粘贴在UV带38的背面。该UV分离带38允许其和基底圆片28在工艺结束后容易从切割带24上去掉。
将器件圆片22和基底圆片28安装在切割带24上以后,器件圆片22就锯切为分立的芯片30。如图30所示,锯切口应延伸通过整个器件圆片22,但不应延伸通过锯切带24。
图1示出了锯切操作前将基底圆片28安装在锯切带24上的较佳方法,但这种方法有时在锯切带24与基底圆片28之间产生气泡。在锯切操作期间这种气泡可能会使锯子或器件圆片22断裂。一种替代方法是安装上基底圆片28之前就锯切器件圆片22。此替代方法的优点在于消除由气泡引起的断裂。其缺点是很有可能某些芯片在锯切操作期间或是将基底圆片28安装在会伸长的切割带24上时将会对不齐。
所有圆片工艺完成后,就从切割带24上取下芯片30,并将它置于所需的封装中。芯片30可以直接从贴着基底圆片的切割带24上取下。但以先取下基底圆片28以允许现有的检放机械得到芯片30为好。为取下芯片30,需要减弱芯片30与锯切带24的粘结强度。减弱粘结强度的一种方法是基底圆片28采用UV透明材料,例如石英。如图4所示,光源36在这种场合下发出UV(紫外)光,透过基底圆片28的背面照射剧切带24。这样就减弱粘结强度而可以使成品芯片30容易从锯切带24取下。
可以得到成品芯片30的另一替代方法是如图4所示钻出通过基底圆片28的通孔34。这些通孔允许检放机械的手指与锯切带24及成品芯片30相接触。手指通过这些通孔伸出,将成品芯片30提升从而脱离锯切带24。
这样,对于不容许碎屑的微机械器件切割以后可以进行圆片工艺的制造方法来说,这方面已经描述了具体的实施例,但这并非意味着除了后面的权利要求以外还可以将这些具体内容作为对本发明保护范围的限定。而且在结合特定实施例对本发明作了说明之后,应该可以理解本领域的技术人员现在自己会想得出进一步的修改方案,因而希望覆盖处于所附权利要求保护范围内的全部这类修改方案。
Claims (15)
1、一种不容许碎屑存在的器件的制造方法,其特征在于包括:
将一基底与包含一个或多个所述器件的圆片相粘贴;
通过锯切或断开所述圆片分离所述器件,在所述分离工艺期间和以后,所述基底坚固地支撑所述器件处于对齐状态。
2、如权利要求1所述的制造方法,其特征在于所述基底由两边均有粘结剂的粘带粘贴于所述圆片上。
3、如权利要求1所述的制造方法,其特征在于所述基底是通过加热所述基底并使所述基底压在粘带的背面上与其正面有粘结剂的粘带的背面相贴的,所述圆片则粘贴于所述粘带的正面。
4、如权利要求1所述的制造方法,其特征在于所述粘贴步骤还包括:采用粘结剂将所述基底粘贴于粘带的背面,所述粘带在正面有粘结剂,所述圆片粘贴于所述粘带的正面。
5、如权利要求1所述的制造方法,其特征在于所述粘贴步骤还包括:采用粘结剂将所述基底粘贴于所述圆片的背面。
6、一种不容许碎屑存在的器件的制造方法,其特征在于包括:
将一膜片与包含一个或多个所述器件的圆片相贴;
通过锯切或断开所述圆片分离所述器件;
将一基底与所述膜片相贴,所述基底坚固地支撑这些器件处于对齐状态。
7、如权利要求6所述的制造方法,其特征在于所述膜片是两面均有粘结剂的粘带。
8、如权利要求6所述的制造方法,其特征在于所述膜片是正面有粘结剂的粘带,基底是通过加热所述基底并使所述基底压在所述膜片的背面上与所述膜片的背面相贴的,所述圆片则粘贴在所述膜片的正面。
9、如权利要求6所述的制造方法,其特征在于所述膜片是正面有粘结剂的粘带,所述基底采用粘结剂粘贴于所述膜片的背面。
10、如权利要求1或6所述的制造方法,其特征在于所述基底是硅。
11、如权利要求1或6所述的制造方法,其特征在于所述基底是石英。
12、如权利要求1或6所述的制造方法,其特征在于所述基底是金属。
13、如权利要求1或6所述的制造方法,其特征在于所述基底制造有通孔以允许得到这些器件。
14、如权利要求1或6所述的制造方法,其特征在于采用粘结剂粘贴所述基底,还包括使所述粘结剂曝光的步骤,以降低所述粘结剂的粘度,从而便于从所述膜片去掉所述基底。
15、一种将基底与切割带背面相结合的方法,其特征在于包括:
加热所述基底;
将受热的基底压在所述切割带的背面。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US2553393A | 1993-03-03 | 1993-03-03 | |
US08/025,533 | 1993-03-03 |
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Publication Number | Publication Date |
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CN1101458A true CN1101458A (zh) | 1995-04-12 |
CN1054437C CN1054437C (zh) | 2000-07-12 |
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CN94102015A Expired - Fee Related CN1054437C (zh) | 1993-03-03 | 1994-03-03 | 微机械器件的制造方法 |
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US (1) | US5622900A (zh) |
EP (1) | EP0614102B1 (zh) |
JP (1) | JP3568980B2 (zh) |
KR (1) | KR100302974B1 (zh) |
CN (1) | CN1054437C (zh) |
CA (1) | CA2115947A1 (zh) |
DE (1) | DE69415059T2 (zh) |
TW (1) | TW246738B (zh) |
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DE102010016781A1 (de) * | 2010-05-04 | 2011-11-10 | Cicor Management AG | Verfahren zur Herstellung einer flexiblen Schaltungsanordnung |
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- 1994-02-18 CA CA002115947A patent/CA2115947A1/en not_active Abandoned
- 1994-03-02 DE DE69415059T patent/DE69415059T2/de not_active Expired - Fee Related
- 1994-03-02 KR KR1019940003938A patent/KR100302974B1/ko not_active IP Right Cessation
- 1994-03-02 EP EP94103104A patent/EP0614102B1/en not_active Expired - Lifetime
- 1994-03-03 JP JP03364294A patent/JP3568980B2/ja not_active Expired - Fee Related
- 1994-03-03 CN CN94102015A patent/CN1054437C/zh not_active Expired - Fee Related
- 1994-06-08 TW TW083105196A patent/TW246738B/zh active
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- 1995-01-12 US US08/374,384 patent/US5622900A/en not_active Expired - Lifetime
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CN101127336B (zh) * | 1996-12-04 | 2010-09-29 | 精工爱普生株式会社 | 半导体装置及其制造方法、电路基板和电子设备 |
US7842598B2 (en) | 1996-12-04 | 2010-11-30 | Seiko Epson Corporation | Electronic component and semiconductor device, method of making the same and method of mounting the same, circuit board, and electronic instrument |
US7888260B2 (en) | 1996-12-04 | 2011-02-15 | Seiko Epson Corporation | Method of making electronic device |
US8115284B2 (en) | 1996-12-04 | 2012-02-14 | Seiko Epson Corporation | Electronic component and semiconductor device, method of making the same and method of mounting the same, circuit board and electronic instrument |
US8384213B2 (en) | 1996-12-04 | 2013-02-26 | Seiko Epson Corporation | Semiconductor device, circuit board, and electronic instrument |
WO2010045754A1 (en) * | 2008-10-23 | 2010-04-29 | Freescale Semiconductor Inc. | Method for singulating electronic components from a substrate |
CN105448779A (zh) * | 2014-08-18 | 2016-03-30 | 英飞凌科技股份有限公司 | 用于处理半导体管芯的装配件和处理半导体管芯的方法 |
US10096508B2 (en) | 2014-08-18 | 2018-10-09 | Infineon Technologies Ag | Assembly for handling a semiconductor die and method of handling a semiconductor die |
Also Published As
Publication number | Publication date |
---|---|
TW246738B (zh) | 1995-05-01 |
JPH076983A (ja) | 1995-01-10 |
DE69415059T2 (de) | 1999-05-20 |
KR100302974B1 (ko) | 2001-11-30 |
JP3568980B2 (ja) | 2004-09-22 |
KR940022799A (ko) | 1994-10-21 |
DE69415059D1 (de) | 1999-01-21 |
EP0614102A3 (en) | 1994-11-30 |
CN1054437C (zh) | 2000-07-12 |
US5622900A (en) | 1997-04-22 |
EP0614102B1 (en) | 1998-12-09 |
EP0614102A2 (en) | 1994-09-07 |
CA2115947A1 (en) | 1994-09-04 |
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