JPS56148838A - Mounting method for ic - Google Patents

Mounting method for ic

Info

Publication number
JPS56148838A
JPS56148838A JP5327780A JP5327780A JPS56148838A JP S56148838 A JPS56148838 A JP S56148838A JP 5327780 A JP5327780 A JP 5327780A JP 5327780 A JP5327780 A JP 5327780A JP S56148838 A JPS56148838 A JP S56148838A
Authority
JP
Japan
Prior art keywords
adhering layer
wafer
substrate member
kerfs
hot melt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5327780A
Other languages
Japanese (ja)
Inventor
Isao Komine
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Watch Co Ltd
Original Assignee
Citizen Watch Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Watch Co Ltd filed Critical Citizen Watch Co Ltd
Priority to JP5327780A priority Critical patent/JPS56148838A/en
Publication of JPS56148838A publication Critical patent/JPS56148838A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Dicing (AREA)

Abstract

PURPOSE:To use a substrate member repeatedly by a method wherein an IC wafer is fastened onto a hot melt type thick adhering layer, kerfs are formed up to the way of the adhering layer and dicing is conducted. CONSTITUTION:The surface of a substrate member 1 is honed, and a rough surface section 7 is formed. The section 7 is coated with a polyester group hot melt type adhering layer 8, and an IC wafer 3 is stacked, heated and glued. Kerfs 4 reaching up to the way of the adhering layer 8 are processed penetrating the wafer 3. Heat and pressure are applied to a finger lead of a tape carrier and an IC electrode, and each IC chip 5 is removed gradually from the adhering layer 8. The substrate member 1 can be reused by exfoliating the adhering layer 8 by means of a physical method.
JP5327780A 1980-04-22 1980-04-22 Mounting method for ic Pending JPS56148838A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5327780A JPS56148838A (en) 1980-04-22 1980-04-22 Mounting method for ic

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5327780A JPS56148838A (en) 1980-04-22 1980-04-22 Mounting method for ic

Publications (1)

Publication Number Publication Date
JPS56148838A true JPS56148838A (en) 1981-11-18

Family

ID=12938237

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5327780A Pending JPS56148838A (en) 1980-04-22 1980-04-22 Mounting method for ic

Country Status (1)

Country Link
JP (1) JPS56148838A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0614102A2 (en) * 1993-03-03 1994-09-07 Texas Instruments Incorporated Improvements in or relating to integrated circuit fabrication
JP2007509501A (en) * 2003-10-22 2007-04-12 ノースロップ・グラマン・コーポレーション Sewing process of hard substrate wafer

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0614102A2 (en) * 1993-03-03 1994-09-07 Texas Instruments Incorporated Improvements in or relating to integrated circuit fabrication
EP0614102A3 (en) * 1993-03-03 1994-11-30 Texas Instruments Inc Improvements in or relating to integrated circuit fabrication.
US5622900A (en) * 1993-03-03 1997-04-22 Texas Instruments Incorporated Wafer-like processing after sawing DMDs
JP2007509501A (en) * 2003-10-22 2007-04-12 ノースロップ・グラマン・コーポレーション Sewing process of hard substrate wafer

Similar Documents

Publication Publication Date Title
MY104709A (en) Adhesive sheet.
EP0981156A3 (en) Surface protective pressure-sensitive adhesive sheet for use in semiconductor wafer back grinding and method of use thereof
ATE141654T1 (en) METHOD FOR COATING SUBSTRATES ON CEMENTED TUNGSTEN CARBIDE WITH ADHESIVE DIAMOND COATING
IL81948A (en) Method for depositing a layer of abrasive material on a substrate
EP0185767A4 (en) Film for machining wafers.
JPS54161268A (en) Method of manufacturing semiconductor device growing silicon layer on sapphire substrate
DE3778596D1 (en) RELEASE FILM FOR ADHESIVE COATING AND LAYER BODY PRODUCTION AND METHOD FOR APPLYING AN ADHESIVE ON A SUBSTRATE.
IT8119031A0 (en) METHOD FOR PRODUCING A METALLIC ARTICLE HAVING A COLUMNAR CRYSTAL CERAMIC THERMAL BARRIER COATING ON POLISHED SUBSTRATES.
ES528514A0 (en) A METHOD PROVIDING A SUBSTRATE A PROTECTIVE SURFACE COATING.
JPS55105382A (en) Method of roughening surface of silicon substrate
JPS56148838A (en) Mounting method for ic
JPS55121669A (en) Method of forming inactive layer on integrated circuit device having substrate of semiconductor material
JPS5471986A (en) Semiconductor device and production thereof
JPS61158145A (en) Processing method for semiconductor substrate
JPS5752137A (en) Bonding method for work in lapping and polishing
FR2576148B1 (en) METHOD FOR MANUFACTURING INTEGRATED CIRCUIT CHIPS
JPS6464947A (en) Package of tear tape and method of forming said tape
JPS5628259A (en) Method of bonding substrate having zinccrich organic coating
JPS5350979A (en) Method of treatment of thin oxide layer on silicon substrate
JPS53146300A (en) Production of silicon carbide substrate
JPS5769781A (en) Semiconductor pressure-sensitive element
JPS5730334A (en) Protection of wiring layer
JPS54113253A (en) Bonding method of semiconductor pellet
JPS56162675A (en) Thermal printing head
JPS5563857A (en) Method of making flexible carrier tape for semiconductor integrated circuit