CN110047745B - 处理晶圆的方法 - Google Patents

处理晶圆的方法 Download PDF

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Publication number
CN110047745B
CN110047745B CN201910030538.XA CN201910030538A CN110047745B CN 110047745 B CN110047745 B CN 110047745B CN 201910030538 A CN201910030538 A CN 201910030538A CN 110047745 B CN110047745 B CN 110047745B
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China
Prior art keywords
wafer
protective film
opposite
dividing line
along
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English (en)
Chinese (zh)
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CN110047745A (zh
Inventor
卡尔·海因茨·普利瓦西尔
星野仁志
D·迈尔
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Disco Corp
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Disco Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0442—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H10P72/7404—Wafer tapes, e.g. grinding or dicing support tapes the wafer tape being a laminate of three or more layers, e.g. including additional layers beyond a base layer and an uppermost adhesive layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/123—Preparing bulk and homogeneous wafers by grinding or lapping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/124—Preparing bulk and homogeneous wafers by processing the backside of the wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H10P72/742—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7422—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Dicing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Laser Beam Processing (AREA)
CN201910030538.XA 2018-01-16 2019-01-14 处理晶圆的方法 Active CN110047745B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102018200656.3 2018-01-16
DE102018200656.3A DE102018200656A1 (de) 2018-01-16 2018-01-16 Verfahren zum Bearbeiten eines Wafers

Publications (2)

Publication Number Publication Date
CN110047745A CN110047745A (zh) 2019-07-23
CN110047745B true CN110047745B (zh) 2023-11-03

Family

ID=67068447

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910030538.XA Active CN110047745B (zh) 2018-01-16 2019-01-14 处理晶圆的方法

Country Status (7)

Country Link
US (2) US11133219B2 (https=)
JP (2) JP7056844B2 (https=)
KR (2) KR20190087334A (https=)
CN (1) CN110047745B (https=)
DE (1) DE102018200656A1 (https=)
SG (2) SG10202109757WA (https=)
TW (1) TWI713976B (https=)

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DE102017208405B4 (de) * 2017-05-18 2024-05-02 Disco Corporation Verfahren zum Bearbeiten eines Wafers und Schutzfolie
JP7229844B2 (ja) * 2019-04-25 2023-02-28 株式会社ディスコ ウエーハの加工方法
DE102019211540A1 (de) 2019-08-01 2021-02-04 Disco Corporation Verfahren zum bearbeiten eines substrats
JP7303704B2 (ja) * 2019-08-27 2023-07-05 株式会社ディスコ ウェーハの分割方法
JP7341606B2 (ja) * 2019-09-11 2023-09-11 株式会社ディスコ ウェーハの加工方法
JP7341607B2 (ja) * 2019-09-11 2023-09-11 株式会社ディスコ ウェーハの加工方法
JP7396863B2 (ja) * 2019-11-06 2023-12-12 株式会社ディスコ 保護部材の形成方法
JP7511976B2 (ja) * 2020-06-10 2024-07-08 株式会社ディスコ ウェーハの加工方法
DE102020210104B4 (de) * 2020-08-10 2025-02-06 Disco Corporation Verfahren zum bearbeiten eines substrats
JP7529478B2 (ja) * 2020-08-13 2024-08-06 株式会社ディスコ ウェーハの加工方法
JP7463036B2 (ja) * 2020-08-21 2024-04-08 株式会社ディスコ シート貼着方法及びシート貼着装置
DE102021209979A1 (de) 2021-09-09 2023-03-09 Disco Corporation Verfahren zur bearbeitung eines substrats
CN114551248A (zh) * 2022-02-16 2022-05-27 江苏芯德半导体科技有限公司 一种晶圆级芯片封装工艺
JP7839665B2 (ja) * 2022-03-17 2026-04-02 リンテック株式会社 被着体処理方法
JP2023176852A (ja) * 2022-06-01 2023-12-13 株式会社ディスコ 被加工物の研削方法、デバイスチップの製造方法
DE102023203941A1 (de) * 2023-04-27 2024-10-31 Carl Zeiss Smt Gmbh Verfahren zur Nachbearbeitung und zur Handhabung von MEMS-Chips
DE102023208767A1 (de) * 2023-09-11 2025-03-13 Disco Corporation Werkstückunterstützung

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WO2017036512A1 (en) * 2015-08-31 2017-03-09 Karl Heinz Priewasser Method of processing wafer and protective sheeting for use in this method
WO2018002035A2 (en) * 2016-06-28 2018-01-04 Karl Heinz Priewasser Method of processing wafer

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CN102034696A (zh) * 2009-10-01 2011-04-27 株式会社迪思科 工件的分割方法
JP2012160659A (ja) * 2011-02-02 2012-08-23 Tokyo Seimitsu Co Ltd レーザダイシング装置及び方法並びにウェーハ処理方法
US9130057B1 (en) * 2014-06-30 2015-09-08 Applied Materials, Inc. Hybrid dicing process using a blade and laser
JP5823591B1 (ja) * 2014-10-01 2015-11-25 古河電気工業株式会社 半導体ウエハ表面保護用粘着テープおよび半導体ウエハの加工方法
WO2017036512A1 (en) * 2015-08-31 2017-03-09 Karl Heinz Priewasser Method of processing wafer and protective sheeting for use in this method
WO2018002035A2 (en) * 2016-06-28 2018-01-04 Karl Heinz Priewasser Method of processing wafer

Also Published As

Publication number Publication date
US20190221480A1 (en) 2019-07-18
KR20190087334A (ko) 2019-07-24
TW201933513A (zh) 2019-08-16
JP2019125785A (ja) 2019-07-25
JP7458964B2 (ja) 2024-04-01
KR102482627B1 (ko) 2022-12-28
KR20210025034A (ko) 2021-03-08
US20210183704A1 (en) 2021-06-17
US11626324B2 (en) 2023-04-11
JP7056844B2 (ja) 2022-04-19
JP2021048407A (ja) 2021-03-25
SG10202109757WA (en) 2021-10-28
CN110047745A (zh) 2019-07-23
SG10201900223QA (en) 2019-08-27
TWI713976B (zh) 2020-12-21
DE102018200656A1 (de) 2019-07-18
US11133219B2 (en) 2021-09-28

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