DE102018200656A1 - Verfahren zum Bearbeiten eines Wafers - Google Patents

Verfahren zum Bearbeiten eines Wafers Download PDF

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Publication number
DE102018200656A1
DE102018200656A1 DE102018200656.3A DE102018200656A DE102018200656A1 DE 102018200656 A1 DE102018200656 A1 DE 102018200656A1 DE 102018200656 A DE102018200656 A DE 102018200656A DE 102018200656 A1 DE102018200656 A1 DE 102018200656A1
Authority
DE
Germany
Prior art keywords
wafer
protective film
facing
along
front surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE102018200656.3A
Other languages
German (de)
English (en)
Inventor
Karl Heinz Priewasser
Hitoshi Hoshino
Dietmar Mayer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Priority to DE102018200656.3A priority Critical patent/DE102018200656A1/de
Priority to JP2019001315A priority patent/JP7056844B2/ja
Priority to SG10202109757W priority patent/SG10202109757WA/en
Priority to SG10201900223QA priority patent/SG10201900223QA/en
Priority to CN201910030538.XA priority patent/CN110047745B/zh
Priority to US16/247,895 priority patent/US11133219B2/en
Priority to TW108101506A priority patent/TWI713976B/zh
Priority to KR1020190005697A priority patent/KR20190087334A/ko
Publication of DE102018200656A1 publication Critical patent/DE102018200656A1/de
Priority to JP2020198491A priority patent/JP7458964B2/ja
Priority to KR1020210025560A priority patent/KR102482627B1/ko
Priority to US17/189,862 priority patent/US11626324B2/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0442—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H10P72/7404—Wafer tapes, e.g. grinding or dicing support tapes the wafer tape being a laminate of three or more layers, e.g. including additional layers beyond a base layer and an uppermost adhesive layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/123—Preparing bulk and homogeneous wafers by grinding or lapping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/124—Preparing bulk and homogeneous wafers by processing the backside of the wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H10P72/742—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7422—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Dicing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Laser Beam Processing (AREA)
DE102018200656.3A 2018-01-16 2018-01-16 Verfahren zum Bearbeiten eines Wafers Pending DE102018200656A1 (de)

Priority Applications (11)

Application Number Priority Date Filing Date Title
DE102018200656.3A DE102018200656A1 (de) 2018-01-16 2018-01-16 Verfahren zum Bearbeiten eines Wafers
JP2019001315A JP7056844B2 (ja) 2018-01-16 2019-01-08 ウェハの処理方法
SG10202109757W SG10202109757WA (en) 2018-01-16 2019-01-10 Method of Processing a Wafer
SG10201900223QA SG10201900223QA (en) 2018-01-16 2019-01-10 Method of Processing a Wafer
CN201910030538.XA CN110047745B (zh) 2018-01-16 2019-01-14 处理晶圆的方法
US16/247,895 US11133219B2 (en) 2018-01-16 2019-01-15 Method of processing a wafer
TW108101506A TWI713976B (zh) 2018-01-16 2019-01-15 處理晶圓的方法
KR1020190005697A KR20190087334A (ko) 2018-01-16 2019-01-16 웨이퍼를 처리하는 방법
JP2020198491A JP7458964B2 (ja) 2018-01-16 2020-11-30 ウェハの処理方法
KR1020210025560A KR102482627B1 (ko) 2018-01-16 2021-02-25 웨이퍼를 처리하는 방법
US17/189,862 US11626324B2 (en) 2018-01-16 2021-03-02 Method of processing a wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102018200656.3A DE102018200656A1 (de) 2018-01-16 2018-01-16 Verfahren zum Bearbeiten eines Wafers

Publications (1)

Publication Number Publication Date
DE102018200656A1 true DE102018200656A1 (de) 2019-07-18

Family

ID=67068447

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102018200656.3A Pending DE102018200656A1 (de) 2018-01-16 2018-01-16 Verfahren zum Bearbeiten eines Wafers

Country Status (7)

Country Link
US (2) US11133219B2 (https=)
JP (2) JP7056844B2 (https=)
KR (2) KR20190087334A (https=)
CN (1) CN110047745B (https=)
DE (1) DE102018200656A1 (https=)
SG (2) SG10202109757WA (https=)
TW (1) TWI713976B (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11348797B2 (en) * 2019-04-25 2022-05-31 Disco Corporation Stacked wafer processing method
DE102021209979A1 (de) 2021-09-09 2023-03-09 Disco Corporation Verfahren zur bearbeitung eines substrats

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017208405B4 (de) * 2017-05-18 2024-05-02 Disco Corporation Verfahren zum Bearbeiten eines Wafers und Schutzfolie
DE102019211540A1 (de) 2019-08-01 2021-02-04 Disco Corporation Verfahren zum bearbeiten eines substrats
JP7303704B2 (ja) * 2019-08-27 2023-07-05 株式会社ディスコ ウェーハの分割方法
JP7341606B2 (ja) * 2019-09-11 2023-09-11 株式会社ディスコ ウェーハの加工方法
JP7341607B2 (ja) * 2019-09-11 2023-09-11 株式会社ディスコ ウェーハの加工方法
JP7396863B2 (ja) * 2019-11-06 2023-12-12 株式会社ディスコ 保護部材の形成方法
JP7511976B2 (ja) * 2020-06-10 2024-07-08 株式会社ディスコ ウェーハの加工方法
DE102020210104B4 (de) * 2020-08-10 2025-02-06 Disco Corporation Verfahren zum bearbeiten eines substrats
JP7529478B2 (ja) * 2020-08-13 2024-08-06 株式会社ディスコ ウェーハの加工方法
JP7463036B2 (ja) * 2020-08-21 2024-04-08 株式会社ディスコ シート貼着方法及びシート貼着装置
CN114551248A (zh) * 2022-02-16 2022-05-27 江苏芯德半导体科技有限公司 一种晶圆级芯片封装工艺
JP7839665B2 (ja) * 2022-03-17 2026-04-02 リンテック株式会社 被着体処理方法
JP2023176852A (ja) * 2022-06-01 2023-12-13 株式会社ディスコ 被加工物の研削方法、デバイスチップの製造方法
DE102023203941A1 (de) * 2023-04-27 2024-10-31 Carl Zeiss Smt Gmbh Verfahren zur Nachbearbeitung und zur Handhabung von MEMS-Chips
DE102023208767A1 (de) * 2023-09-11 2025-03-13 Disco Corporation Werkstückunterstützung

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040147120A1 (en) * 2001-05-03 2004-07-29 Michael Rogalli Process for the back-surface grinding of wafers
US20100051190A1 (en) * 2004-12-09 2010-03-04 Qimonda Ag Method for applying an adhesive layer on thin cut semiconductor chips of semiconductor wafers
US20110146567A1 (en) * 2005-03-10 2011-06-23 Werner Kroeninger Device for Treating Wafers on Assembly Carriers
US9130057B1 (en) * 2014-06-30 2015-09-08 Applied Materials, Inc. Hybrid dicing process using a blade and laser

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5823591B2 (ja) 1979-03-22 1983-05-16 株式会社日立国際電気 移動体の位置検知装置
JP3892703B2 (ja) * 2001-10-19 2007-03-14 富士通株式会社 半導体基板用治具及びこれを用いた半導体装置の製造方法
JP2005191297A (ja) 2003-12-25 2005-07-14 Jsr Corp ダイシングフィルム及び半導体ウェハの切断方法
JP2005191296A (ja) 2003-12-25 2005-07-14 Jsr Corp バックグラインドテープ及び半導体ウェハの研磨方法
JP4642436B2 (ja) * 2004-11-12 2011-03-02 リンテック株式会社 マーキング方法および保護膜形成兼ダイシング用シート
JP4478053B2 (ja) * 2005-03-29 2010-06-09 株式会社ディスコ 半導体ウエーハ処理方法
JP2007035880A (ja) * 2005-07-26 2007-02-08 Matsushita Electric Works Ltd バンプ付きウエハの製造方法、バンプ付きウエハ、半導体装置
JP4930679B2 (ja) * 2005-12-14 2012-05-16 日本ゼオン株式会社 半導体素子の製造方法
JP5151104B2 (ja) * 2006-09-22 2013-02-27 パナソニック株式会社 電子部品の製造方法
JP2009117441A (ja) 2007-11-02 2009-05-28 Creative Technology:Kk ワーク保持装置
JP5216472B2 (ja) * 2008-08-12 2013-06-19 日東電工株式会社 半導体ウエハの保護テープ貼付け方法およびその装置
JP5320058B2 (ja) * 2008-12-26 2013-10-23 株式会社ディスコ 樹脂被覆方法および樹脂被覆装置
CN102318059A (zh) * 2009-02-12 2012-01-11 住友电木株式会社 带切割片的半导体保护膜形成用膜、使用该膜的半导体装置的制造方法及半导体装置
JP2011077429A (ja) * 2009-10-01 2011-04-14 Disco Abrasive Syst Ltd ワーク分割方法
JP5846470B2 (ja) * 2011-02-02 2016-01-20 株式会社東京精密 レーザダイシング装置及び方法並びにウェーハ処理方法
JP5830250B2 (ja) * 2011-02-15 2015-12-09 日東電工株式会社 半導体装置の製造方法
JP5666335B2 (ja) * 2011-02-15 2015-02-12 日東電工株式会社 保護層形成用フィルム
US8969177B2 (en) 2012-06-29 2015-03-03 Applied Materials, Inc. Laser and plasma etch wafer dicing with a double sided UV-curable adhesive film
US9754811B2 (en) 2012-08-23 2017-09-05 Lintec Corporation Dicing sheet with protective film forming layer and method for producing chip
JP6061590B2 (ja) * 2012-09-27 2017-01-18 株式会社ディスコ 表面保護部材および加工方法
KR102046534B1 (ko) * 2013-01-25 2019-11-19 삼성전자주식회사 기판 가공 방법
JP6054234B2 (ja) 2013-04-22 2016-12-27 株式会社ディスコ ウエーハの加工方法
JP6230381B2 (ja) * 2013-11-15 2017-11-15 株式会社ディスコ 加工方法
JP6385133B2 (ja) * 2014-05-16 2018-09-05 株式会社ディスコ ウェーハの加工方法及び中間部材
JP6270642B2 (ja) * 2014-06-27 2018-01-31 株式会社ディスコ テープ拡張装置
JP5823591B1 (ja) * 2014-10-01 2015-11-25 古河電気工業株式会社 半導体ウエハ表面保護用粘着テープおよび半導体ウエハの加工方法
JP6360411B2 (ja) * 2014-10-09 2018-07-18 株式会社ディスコ ウエーハの加工方法
JP2016167552A (ja) * 2015-03-10 2016-09-15 株式会社ディスコ 単結晶基板の加工方法
US9601375B2 (en) * 2015-04-27 2017-03-21 Applied Materials, Inc. UV-cure pre-treatment of carrier film for wafer dicing using hybrid laser scribing and plasma etch approach
JP2018524201A (ja) 2015-05-19 2018-08-30 コーニング インコーポレイテッド シートをキャリアと結合するための物品および方法
JP2017041469A (ja) * 2015-08-17 2017-02-23 日東電工株式会社 保護テープ貼付け方法
US11437275B2 (en) * 2015-08-31 2022-09-06 Disco Corporation Method of processing wafer and protective sheeting for use in this method
GB201518756D0 (en) * 2015-10-22 2015-12-09 Spts Technologies Ltd Apparatus for plasma dicing
WO2017077809A1 (ja) * 2015-11-04 2017-05-11 リンテック株式会社 半導体装置の製造方法
JP6837057B2 (ja) 2016-04-28 2021-03-03 リンテック株式会社 保護膜付き半導体チップの製造方法及び半導体装置の製造方法
GB2551732B (en) * 2016-06-28 2020-05-27 Disco Corp Method of processing wafer
DE102016111834B4 (de) 2016-06-28 2019-01-10 Dirk Junge An- und Ausziehhilfe für Kompressionsstrümpfe

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040147120A1 (en) * 2001-05-03 2004-07-29 Michael Rogalli Process for the back-surface grinding of wafers
US20100051190A1 (en) * 2004-12-09 2010-03-04 Qimonda Ag Method for applying an adhesive layer on thin cut semiconductor chips of semiconductor wafers
US20110146567A1 (en) * 2005-03-10 2011-06-23 Werner Kroeninger Device for Treating Wafers on Assembly Carriers
US9130057B1 (en) * 2014-06-30 2015-09-08 Applied Materials, Inc. Hybrid dicing process using a blade and laser

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11348797B2 (en) * 2019-04-25 2022-05-31 Disco Corporation Stacked wafer processing method
DE102021209979A1 (de) 2021-09-09 2023-03-09 Disco Corporation Verfahren zur bearbeitung eines substrats
US12094751B2 (en) 2021-09-09 2024-09-17 Disco Corporation Method of processing a substrate

Also Published As

Publication number Publication date
US20190221480A1 (en) 2019-07-18
KR20190087334A (ko) 2019-07-24
TW201933513A (zh) 2019-08-16
JP2019125785A (ja) 2019-07-25
JP7458964B2 (ja) 2024-04-01
KR102482627B1 (ko) 2022-12-28
KR20210025034A (ko) 2021-03-08
CN110047745B (zh) 2023-11-03
US20210183704A1 (en) 2021-06-17
US11626324B2 (en) 2023-04-11
JP7056844B2 (ja) 2022-04-19
JP2021048407A (ja) 2021-03-25
SG10202109757WA (en) 2021-10-28
CN110047745A (zh) 2019-07-23
SG10201900223QA (en) 2019-08-27
TWI713976B (zh) 2020-12-21
US11133219B2 (en) 2021-09-28

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