CN110024142B - 半导体器件和包括半导体器件的显示装置 - Google Patents

半导体器件和包括半导体器件的显示装置 Download PDF

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CN110024142B
CN110024142B CN201780072900.9A CN201780072900A CN110024142B CN 110024142 B CN110024142 B CN 110024142B CN 201780072900 A CN201780072900 A CN 201780072900A CN 110024142 B CN110024142 B CN 110024142B
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light emitting
wavelength conversion
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semiconductor device
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CN110024142A (zh
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李尚烈
金青松
文智炯
朴鲜雨
赵炫旻
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LG Innotek Co Ltd
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LG Innotek Co Ltd
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Priority claimed from KR1020160160753A external-priority patent/KR102739437B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
    • H01L25/0655—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
CN201780072900.9A 2016-11-24 2017-11-24 半导体器件和包括半导体器件的显示装置 Active CN110024142B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
KR10-2016-0157703 2016-11-24
KR1020160157703A KR102639100B1 (ko) 2016-11-24 2016-11-24 반도체 소자 및 이를 포함하는 표시 장치
KR10-2016-0160753 2016-11-29
KR1020160160753A KR102739437B1 (ko) 2016-11-29 2016-11-29 반도체 소자 및 이를 포함하는 표시 장치
PCT/KR2017/013560 WO2018097667A1 (ko) 2016-11-24 2017-11-24 반도체 소자 및 이를 포함하는 표시 장치

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CN110024142A CN110024142A (zh) 2019-07-16
CN110024142B true CN110024142B (zh) 2023-02-17

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US (1) US10790330B2 (enExample)
EP (2) EP4224526A1 (enExample)
JP (1) JP7171568B2 (enExample)
CN (1) CN110024142B (enExample)
WO (1) WO2018097667A1 (enExample)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6824501B2 (ja) * 2017-02-08 2021-02-03 ウシオ電機株式会社 半導体発光素子
TWI707491B (zh) * 2019-12-04 2020-10-11 錼創顯示科技股份有限公司 微型發光二極體顯示面板
KR102523976B1 (ko) 2017-11-21 2023-04-20 삼성전자주식회사 디스플레이 장치
US10643980B2 (en) * 2018-01-23 2020-05-05 Epistar Corporation Light-emitting device, manufacturing method thereof and display module using the same
KR102551354B1 (ko) * 2018-04-20 2023-07-04 삼성전자 주식회사 반도체 발광 소자 및 그 제조 방법
WO2020003056A1 (ja) * 2018-06-29 2020-01-02 株式会社半導体エネルギー研究所 表示パネル、表示装置、入出力装置、情報処理装置
KR102701627B1 (ko) * 2018-07-03 2024-09-02 삼성디스플레이 주식회사 표시 장치 및 이의 제조방법
TWI683445B (zh) * 2018-07-20 2020-01-21 英屬開曼群島商錼創科技股份有限公司 顯示面板
US11289463B2 (en) * 2018-07-20 2022-03-29 PlayNitride Inc. Display panel
KR102663635B1 (ko) 2018-09-19 2024-05-14 삼성디스플레이 주식회사 발광 장치 및 이를 구비하는 표시 장치
KR102671368B1 (ko) * 2018-12-12 2024-06-04 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조방법
TWI836519B (zh) * 2019-05-24 2024-03-21 晶元光電股份有限公司 封裝與顯示模組
CN110649181B (zh) * 2019-10-08 2022-04-26 京东方科技集团股份有限公司 显示基板、显示装置以及显示基板的制备方法
TW202119652A (zh) * 2019-10-31 2021-05-16 隆達電子股份有限公司 顯示裝置及其製造方法
US12463077B2 (en) 2019-10-31 2025-11-04 Lextar Electronics Corporation Method of manufacturing display device
JP2021071645A (ja) * 2019-10-31 2021-05-06 シャープ福山セミコンダクター株式会社 表示デバイス、および表示デバイスの製造方法
CN110752242B (zh) * 2019-10-31 2021-09-21 武汉天马微电子有限公司 一种显示面板及显示装置
JP7239451B2 (ja) * 2019-11-14 2023-03-14 アオイ電子株式会社 発光装置および発光装置の製造方法
CN211555890U (zh) * 2019-12-02 2020-09-22 深圳市绎立锐光科技开发有限公司 Led显示装置
US11476394B2 (en) * 2020-01-09 2022-10-18 Samsung Electronics Co., Ltd. Light emitting device and display apparatus
DE102020101470A1 (de) * 2020-01-22 2021-07-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Bauelement mit konverterschicht und verfahren zur herstellung eines bauelements
JP2021125616A (ja) * 2020-02-07 2021-08-30 ソニーセミコンダクタソリューションズ株式会社 表示装置
CN113707037A (zh) * 2020-05-22 2021-11-26 北京芯海视界三维科技有限公司 发光模组、显示模组、显示屏及显示器
CN113851502A (zh) * 2020-06-10 2021-12-28 华为机器有限公司 显示面板、显示装置及显示面板的制备方法
US20220003903A1 (en) * 2020-07-01 2022-01-06 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Quantum dot color filter substrate, manufacturing method thereof, and display panel
KR20220019198A (ko) * 2020-08-07 2022-02-16 삼성디스플레이 주식회사 표시 장치
KR20220044034A (ko) * 2020-09-29 2022-04-06 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
US12136610B2 (en) 2020-11-30 2024-11-05 Seoul Viosys Co., Ltd. Unit pixel and displaying apparatus including the unit pixel
US12154936B2 (en) * 2021-02-02 2024-11-26 Samsung Electronics Co., Ltd. Display module and manufacturing method thereof
US20220352247A1 (en) * 2021-04-30 2022-11-03 Samsung Display Co., Ltd. Display device and method of manufacturing the same
CN117223106A (zh) * 2021-05-17 2023-12-12 三星电子株式会社 显示模块和包括该显示模块的电子设备
US12095012B2 (en) * 2021-07-16 2024-09-17 Epistar Corporation Light-emitting device
KR102847517B1 (ko) * 2021-07-27 2025-08-19 삼성디스플레이 주식회사 표시 장치
KR20230099023A (ko) * 2021-12-27 2023-07-04 엘지디스플레이 주식회사 표시 장치

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06163980A (ja) * 1992-11-17 1994-06-10 Sanyo Electric Co Ltd 発光ダイオードアレイ装置
TW201216512A (en) * 2010-10-12 2012-04-16 Ubilux Optoelectronics Corp LED capable of laterally emitting light
TW201620124A (zh) * 2014-08-19 2016-06-01 海特根微光學公司 具有一矽基板之光電模組及其製造方法
WO2016171207A1 (ja) * 2015-04-24 2016-10-27 シャープ株式会社 波長変換基板、発光装置並びにこれを備えた表示装置、照明装置および電子機器

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11251059A (ja) * 1998-02-27 1999-09-17 Sanyo Electric Co Ltd カラー表示装置
JP2008010298A (ja) 2006-06-29 2008-01-17 Idemitsu Kosan Co Ltd 色変換基板及びカラー表示装置
JP4979020B2 (ja) * 2008-06-30 2012-07-18 シャープ株式会社 画像表示装置
KR20120038539A (ko) * 2009-07-30 2012-04-23 쓰리엠 이노베이티브 프로퍼티즈 컴파니 픽셀화된 ｌｅｄ
JP2011108588A (ja) * 2009-11-20 2011-06-02 Koito Mfg Co Ltd 発光モジュールおよび車両用灯具
KR20130007037A (ko) * 2011-06-28 2013-01-18 (주)세미머티리얼즈 발광소자 패키지 및 그 제조 방법
JP2014199267A (ja) 2011-08-05 2014-10-23 シャープ株式会社 蛍光体基板、表示装置および電子機器
JP2013196854A (ja) * 2012-03-16 2013-09-30 Sharp Corp 蛍光体基板およびこれを備えた表示装置
KR101422037B1 (ko) * 2012-09-04 2014-07-23 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치
KR101948207B1 (ko) * 2012-09-24 2019-04-26 삼성디스플레이 주식회사 백색 발광 소자, 이를 포함하는 백색 발광 패널, 백색 발광 패널의 제조 방법, 및 백색 발광 소자를 포함하는 표시 장치
JP2015056650A (ja) 2013-09-13 2015-03-23 株式会社東芝 発光装置
JP2015156431A (ja) * 2014-02-20 2015-08-27 スタンレー電気株式会社 半導体発光素子及び半導体発光装置
US9831387B2 (en) * 2014-06-14 2017-11-28 Hiphoton Co., Ltd. Light engine array
GB201420452D0 (en) * 2014-11-18 2014-12-31 Mled Ltd Integrated colour led micro-display
KR101688163B1 (ko) * 2015-03-30 2016-12-20 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법
US10340257B2 (en) * 2016-05-31 2019-07-02 Lg Electronics Inc. Display device using semiconductor light emitting device and fabrication method thereof
EP4033532B1 (en) * 2016-09-22 2023-11-01 LG Electronics Inc. Display apparatus using semiconductor light emitting device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06163980A (ja) * 1992-11-17 1994-06-10 Sanyo Electric Co Ltd 発光ダイオードアレイ装置
TW201216512A (en) * 2010-10-12 2012-04-16 Ubilux Optoelectronics Corp LED capable of laterally emitting light
TW201620124A (zh) * 2014-08-19 2016-06-01 海特根微光學公司 具有一矽基板之光電模組及其製造方法
WO2016171207A1 (ja) * 2015-04-24 2016-10-27 シャープ株式会社 波長変換基板、発光装置並びにこれを備えた表示装置、照明装置および電子機器

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EP4224526A1 (en) 2023-08-09
EP3547376A1 (en) 2019-10-02
US20190378873A1 (en) 2019-12-12
JP2019536292A (ja) 2019-12-12
EP3547376A4 (en) 2020-07-01
WO2018097667A1 (ko) 2018-05-31
JP7171568B2 (ja) 2022-11-15
US10790330B2 (en) 2020-09-29
CN110024142A (zh) 2019-07-16
EP3547376B1 (en) 2023-05-17

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