201216512 六、發明說明： 【發明所屬之技術領域】 本發明是有關於一種發光二極體，特別是指一種可側 向出光的發光二極體。 【先前技術】 參閱圖1及圖2，為目前的發光二極體1，其結構包含 一塊板狀的基板11、一與該基板11連結並可在接受電能時 以光電效應產生光的磊晶單元12、一透明導電層13,及一 電極單元14。 該蠢晶單元12以氮化鎵銦系化合物為主要材料並利用 磊晶的方式形成於該基板11上，且就半導體物理結構而分 ，共具有一形成於該基板11的η型披覆層（n-type ciadding layer)、一形成於該n型彼覆層上的發光層（active iaye〇， 及一形成於該發光層上的p型彼覆層（p_type cladding layer )。該η、p型披覆層相對該發光層形成能障而在電流通過 時以光電效應產生光。 再以實體結構分類，該磊晶單元12包括一形成於該基 板11的頂面並與該基板11的頂面積相對應的底層121，及 一形成於該底層121上的延伸結構122 ^該底層12ι為一連 結於該基板11的平板狀層體，且該底層121的部份頂面 123顯露於該延伸結構122外，該延伸結構122概為一方型 層體’並具有四垂直該底層頂面123且側邊彼此連接的側 周面124。因此，該延伸結構122的側周面124與該底層頂 面123夾設趨近90。的夾角。 201216512 該透明導電層13以透明且電阻值低的導電材料形成於 該磊晶單元12的延伸結構122上，用以增加電流擴散 (current spreading) ° 該電極單元14包括二分別設置於該透明導電層13及 該底層121的第一電極141及第二電極142，可將外界提供 的電能傳送至該磊晶單元12。 當自該等電極配合施加電能時，電流經過該透明導電 層13橫向擴散後垂直流通過該底層12ι及延伸結構122, 而以光電效應產生光，進而使該發光二極體1向外發光。 由於該磊晶單元12的延伸結構122呈現一立方體，也 就是該等側周面124相配合為四平坦的平面，且該延伸結 構122的側周面124與該底層頂面123概成垂直，所以當 電流通過該磊晶單元12以光電效應產生光時，部份垂直朝 向该延伸結構122的頂面行進的光直接正向穿出而至外界 ，另一部份朝向該延伸結構122的側周面124方向行進的 光則由於爻到與外界的界面處的入射角角度的影響而全反 射回元件内部，無法向外射出’並於發光二極It 1内部形 成廢熱。#影㈣元件整體的發光亮度，同_積於發 光一極體1内部的廢熱能也縮短元件的壽命。 【發明内容】 囚此 …之目的，即在提供-種可導引側向光向 卜射出以增加元件發光亮度的可側向出光的發光二極體。 、一於？」本發明可側向出光的發光二極體，包含-基板 、一磊晶單元，及一電極單元。 201216512 該磊晶單元在接受電能時能以光電效應產生光，包括 一連結於該基板的底層、一設置於該底層上一體向遠離該 基板方向延伸的底部結構、一自該底部結構一體向遠離該 基板方向延伸的過渡結構，及一自該過渡結構一體向遠離 該基板方向延伸的頂部結構，該底部結構實質平行於該基 板的橫剖面面積向遠離該基板方向漸增，該頂部結構的橫 剖面面積向遠離該基板方向漸減。 該電極單元將外界的電能提供至該磊晶單元使該磊晶 單元發光。 本發明之功效在於：利用該底部結構及該頂部結構的 橫剖面面積的變化，調整該磊晶單元所產生的光向外射出 的角度’增加光的折射機率，並減少光在發光二極體内部 全反射而產生的廢熱能，提升整體正向發光的亮度及增加 使用壽命。 【實施方式】 有關本發明之前述及其他技術内容、特點與功效，在 以下配合參考圖式之二個較佳實施例的詳細說明中，將可 清楚的呈現。 在本發明被詳細描述之前，要注意的是，在以下的說 明内容中，類似的元件是以相同的編號來表示。 參閱圖3及圖4，本發明可側向出光的發光二極體2的 一第一較佳實施例包含一基板21、一設置於該基板21並能 在接受電能時以光電效應產生光的磊晶單元22、—設置於 該磊晶單元22上的透明導電層25，及一自外界提供電能至 201216512 該磊晶單元22的電極單元24。 該基板21供承載之用’可為絕緣材料、藍寶石（ai2〇3) 、碳化矽（SiC)、矽（Si)、砷化鎵（CaAs)、偏鋁酸鋰（LiA102) 、鎵酸鋰（LiGa〇2)，或氮化鋁（A1N)等所構成，在本例是藍 寶石構成的。 該磊晶單元22配合該藍寶石的基板21，而由氮化鎵銦 系化合物磊晶形成’且就半導體物理的結構做分類，具有 一形成於該基板21的n型彼覆層、一形成於該n型彼覆層 上的發光層，及一形成於該發光層上的p型彼覆層。該n、 Ρ型披覆層相對泫發光層形成能障而在電流通過時以光電效 應產生光；由於該磊晶單元22的物理結構變化種類眾多， 且並非本案技術手段重點所在，故在此僅以最簡單結構作 說明’而不多加舉例贅述。 就貫體結構而言，該磊晶單 21上的底層221、一形成於該底層頂面225並往遠離該 板2丨方向延伸的底部結構222、—自該底部結構222往201216512 VI. Description of the Invention: [Technical Field] The present invention relates to a light-emitting diode, and more particularly to a light-emitting diode that can emit light laterally. [Prior Art] Referring to FIG. 1 and FIG. 2, the current light-emitting diode 1 has a structure including a plate-shaped substrate 11, an epitaxial layer coupled to the substrate 11 and capable of generating light by photoelectric effect when receiving electric energy. The unit 12, a transparent conductive layer 13, and an electrode unit 14. The dormant unit 12 is formed of a gallium nitride indium compound as a main material and is formed on the substrate 11 by epitaxy, and has a n-type cladding layer formed on the substrate 11 in terms of a semiconductor physical structure. (n-type ciadding layer), a light-emitting layer (active iaye 形成 formed on the n-type cladding layer, and a p-type cladding layer formed on the luminescent layer. The η, p The type of cladding layer forms an energy barrier with respect to the light-emitting layer and generates light by a photoelectric effect when current is passed through. Further classified by a solid structure, the epitaxial unit 12 includes a top surface formed on the substrate 11 and a top surface of the substrate 11. The bottom layer 121 corresponding to the area, and an extension structure 122 formed on the bottom layer 121. The bottom layer 12 is a flat layer connected to the substrate 11, and a portion of the top surface 123 of the bottom layer 121 is exposed to the extension Outside the structure 122, the extension structure 122 is substantially a one-layer layer body 'and has four side peripheral surfaces 124 perpendicular to the bottom layer top surface 123 and the side edges are connected to each other. Therefore, the side peripheral surface 124 of the extension structure 122 and the bottom layer top The face 123 is clamped to an angle of close to 90. 20121651 2 The transparent conductive layer 13 is formed on the extended structure 122 of the epitaxial unit 12 with a transparent and low-resistance conductive material for increasing current spreading. The electrode unit 14 includes two electrodes respectively disposed on the transparent conductive layer. The layer 13 and the first electrode 141 and the second electrode 142 of the bottom layer 121 can transmit externally supplied electric energy to the epitaxial unit 12. When electric energy is applied from the electrodes, the current is laterally diffused through the transparent conductive layer 13. The vertical flow passes through the bottom layer 12i and the extension structure 122 to generate light by the photoelectric effect, thereby causing the light-emitting diode 1 to emit light outward. Since the extension structure 122 of the epitaxial unit 12 presents a cube, that is, the sides The circumferential surface 124 is matched into a four flat plane, and the side peripheral surface 124 of the extending structure 122 is perpendicular to the bottom surface 123 of the bottom layer, so when the current passes through the epitaxial unit 12 to generate light by photoelectric effect, the portion is vertical The light traveling toward the top surface of the extending structure 122 directly passes forward to the outside, and the other portion of the light traveling toward the side peripheral surface 124 of the extending structure 122 is due to the outside. The influence of the incident angle at the interface is totally reflected back into the inside of the component, and it cannot be emitted outwards and forms waste heat inside the light-emitting diode It 1. The overall brightness of the component (4) is the same as that of the light-emitting body 1 The waste heat energy also shortens the life of the component. SUMMARY OF THE INVENTION The purpose of the object is to provide a laterally light-emitting diode that emits lateral light to the component to increase the brightness of the component. The light-emitting diode of the present invention can be laterally emitted, comprising a substrate, an epitaxial unit, and an electrode unit. 201216512 The epitaxial unit can generate light by photoelectric effect when receiving electric energy, and comprises a bottom layer connected to the substrate, a bottom structure disposed on the bottom layer and extending away from the substrate, and an integral structure away from the bottom structure. a transition structure extending in the direction of the substrate, and a top structure extending integrally from the transition structure away from the substrate, the bottom structure being substantially parallel to the cross-sectional area of the substrate and increasing in a direction away from the substrate, the horizontal structure of the top structure The cross-sectional area is tapered away from the substrate. The electrode unit supplies external electric energy to the epitaxial unit to cause the epitaxial unit to emit light. The effect of the invention is to adjust the angle of the outward emission of the light generated by the epitaxial unit by using the bottom structure and the change of the cross-sectional area of the top structure to increase the refractive index of the light and reduce the light in the light-emitting diode. The waste heat generated by internal total reflection enhances the brightness of the overall forward illumination and increases the service life. The above and other technical contents, features and effects of the present invention will be apparent from the following detailed description of the preferred embodiments of the invention. Before the present invention is described in detail, it is noted that in the following description, similar elements are denoted by the same reference numerals. Referring to FIG. 3 and FIG. 4, a first preferred embodiment of the laterally-emitting light-emitting diode 2 of the present invention comprises a substrate 21 disposed on the substrate 21 and capable of generating light by photoelectric effect when receiving electrical energy. The epitaxial unit 22, the transparent conductive layer 25 disposed on the epitaxial unit 22, and an electrode unit 24 for supplying power from the outside to the 201216512 epitaxial unit 22. The substrate 21 can be used for carrying materials, such as insulating material, sapphire (ai2〇3), tantalum carbide (SiC), germanium (Si), gallium arsenide (CaAs), lithium metaaluminate (LiA102), lithium gallate ( LiGa〇2), or aluminum nitride (A1N), is composed of sapphire in this example. The epitaxial unit 22 is formed by epitaxial formation of a gallium indium-based compound and is classified into a physical structure of the semiconductor, and has an n-type cladding layer formed on the substrate 21, and is formed on the substrate 21 of the sapphire. a light-emitting layer on the n-type cladding layer and a p-type cladding layer formed on the light-emitting layer. The n-type 披-type cladding layer forms an energy barrier with respect to the 泫 light-emitting layer and generates light by a photoelectric effect when the current passes; since the physical structure of the epitaxial unit 22 varies, and is not the focus of the technical means of the present invention, Explain only in the simplest structure' without further elaboration. In terms of the structure, the bottom layer 221 of the epitaxial sheet 21, a bottom structure 222 formed on the bottom surface 225 of the bottom layer and extending away from the side of the board 2, from the bottom structure 222
離該基板21方向延伸的過渡結構223，及一自該該過渡 構223往遠離該基板21方向延伸的頂部結構咖。此外 該蟲晶單it 22還包括—穿過職晶單元22的任—橫剖 的内部軸線Y。在本發明的該第一較佳實施例中，該磊晶 疋22的底層221、底部結構222 '過渡結構223，及頂部 構224是由磊晶的的方式一體成型。 該底層221呈平行該基板21的平板狀，且與該基板： 頂面積相對應並為具有厚度的層體。該底部結構m ^ 201216512 成於該底層頂面225，而使部份該底層頂面225顯露於外， 且該底部結構222具有一遠離該基板的第-頂面226, 及複數連結該第一頂面226的第一側面。A transition structure 223 extending from the substrate 21 and a top structure extending from the transition structure 223 away from the substrate 21. In addition, the insect crystal single it 22 also includes an internal axis Y that passes through any cross-section of the crystal unit 22. In the first preferred embodiment of the present invention, the bottom layer 221, the bottom structure 222' transition structure 223, and the top structure 224 of the epitaxial germanium 22 are integrally formed by epitaxial means. The bottom layer 221 has a flat shape parallel to the substrate 21, and corresponds to the top surface area of the substrate and is a layer body having a thickness. The bottom structure m ^ 201216512 is formed on the bottom surface 225 of the bottom layer, and a portion of the bottom surface 225 is exposed, and the bottom structure 222 has a first top surface 226 away from the substrate, and the first connection is the first The first side of the top surface 226.
該等第一側S 227分別自該第一頂面226往該底層221 的方向延伸，並同時往該内部軸、線丫方向内縮，且該等第 :側面切的側邊彼此連接，使該等第一側自227與該顯 路於該底部結冑222外的底層頂面如夾設成預定銳角。 換句話說1以實質平行該基板21的橫剖面面積而言該 底部結構222的橫剖面面積向遠離該基板21的方向漸增。 該過渡結構223形成於該底部結構222的第一頂面S226 並覆蓋全部第-頂面226，使該第—頂面以不顯露於外。 :外’以實質平行該基板21的橫剖面面積而言，該過渡結 構223的橫剖面面積往遠離該基板21的方向漸減。 邊頂部結構224為平行該基板21的平板狀，且具有一 鄰近該基才反21的第二底面228 ’及複數連結該第二底面 228且側邊彼此連結的第二側面229。該等第二側面229分 別自該第二底S 228往遠離該過渡結構223的方向延伸， 並同時往該内部軸線γ方向内縮。若以實質平行該基板2ι 的橫剖面面積而言’該頂部結構224的橫剖面面積^遠離 該基板21的方向漸減。 違透明導電層25為透明可透光，且以可供電流橫向擴 散流通的材料所構成，並自該頂部結# 224頂面往遠㈣ 基板Μ方向延伸4該第-較佳實施例中，該透明導電: h以氧化銦錫、氧化銦鋅、氧化鋅鋁及氧化鋅鎵，及其中 201216512 之一組合為材料所構成。 該電極早元24包括—與該透明導電層25電連接的第 電極241，及一與該底層221電連接的第二電極242，兩 電極24卜242相配合而可將外界的電能提供至該蟲晶單元 22 ’使該磊晶單元22發光。 當自該電極單元24的第—電極241與第二電極Μ施 加電能時，電流經過該透明導電層25橫向分散流通後垂直 流通過該底部結構222、該頂部結構224與該過渡結構如 ’而以光電效應產生光。 產生的光部份直接往上射出；部分的光朝向該基板Μ 方向行進，再制該基板21將光反射後往上射出，並連同 原本即朝向正向方向行進的光，直接穿經該透明導電層Μ 正向向上向外射出；其餘朝向該底部結構222的第一側面 227及頂部結構224的第二側面⑵的光藉由分別往遠離 該過渡結構223方向内縮的平滑的側面227、229,使光穿 經該第-、第二側面227 ' 229時所受的臨界角度的限制， 可較側面與該底層的底面夾成9G。時的臨界角度限制大幅減 少’而可自該第-、第二側面227 ' 229向外折射出而成側 向光。因&，其中一部分的往側向光直接向外正向發光， 另一部份經顯露於該底部結構222的底層頂面225且往該 基板21方向的側向光經該基板21反射後可向上正向發光 ，該底部結構222及該頂部結構224修正及導引被目前發 光二極體的結構困在元件内部而成為廢熱的侧向光，從而 大幅增加整體元件發光亮度 同時’也改善反射回元件内 201216512 進而影響發光二極體 部的光所產生的廢熱能使元件過熱 壽命的問題。 閱圖5’本發明的第二較佳實施例與該第一較佳實施The first side S 227 extends from the first top surface 226 toward the bottom layer 221, and is simultaneously retracted toward the inner shaft and the coil, and the sides of the first side cut are connected to each other. The first side is sandwiched from the top surface of the bottom layer 227 and the bottom surface of the bottom layer 222 by a predetermined acute angle. In other words, the cross-sectional area of the bottom structure 222 is gradually increased in a direction away from the substrate 21 in a substantially parallel cross-sectional area of the substrate 21. The transition structure 223 is formed on the first top surface S226 of the bottom structure 222 and covers all of the first top surface 226 such that the first top surface is not exposed. The outer portion is substantially parallel to the cross-sectional area of the substrate 21, and the cross-sectional area of the transition structure 223 is gradually decreased in a direction away from the substrate 21. The side top structure 224 is in the shape of a flat plate parallel to the substrate 21, and has a second bottom surface 228' adjacent to the base surface 21 and a second side surface 229 joined to the second bottom surface 228 by a plurality of sides. The second side faces 229 extend from the second bottom S 228 away from the transition structure 223 and are simultaneously retracted toward the inner axis γ. The cross-sectional area of the top structure 224 is gradually reduced from the direction of the substrate 21 in a substantially parallel cross-sectional area of the substrate 2i. The transparent conductive layer 25 is transparent and permeable, and is made of a material that can diffuse and circulate current, and extends from the top surface of the top junction #224 to the far side (four) substrate Μ direction. In the preferred embodiment, The transparent conductive: h is composed of a combination of indium tin oxide, indium zinc oxide, zinc aluminum oxide and zinc gallium oxide, and one of 201216512. The electrode element 24 includes a first electrode 241 electrically connected to the transparent conductive layer 25, and a second electrode 242 electrically connected to the bottom layer 221. The two electrodes 24 242 cooperate to supply external electric energy to the electrode The crystal unit 22' causes the epitaxial unit 22 to emit light. When electrical energy is applied from the first electrode 241 and the second electrode 该 of the electrode unit 24, a current flows laterally through the transparent conductive layer 25 and then flows vertically through the bottom structure 222, the top structure 224, and the transition structure such as Light is produced by the photoelectric effect. The generated light portion is directly emitted upward; part of the light travels toward the substrate Μ direction, and the substrate 21 is recrystallized and then emitted upward, and directly passes through the transparent light along with the light that is originally traveling in the forward direction. The conductive layer 射 is emitted upwardly and outwardly; the remaining light toward the second side surface 227 of the bottom structure 222 and the second side surface (2) of the top structure 224 are respectively smoothed toward the smooth side 227 which is retracted away from the transition structure 223, 229, limiting the critical angle of light passing through the first and second side faces 227'229, may be 9G between the side and the bottom surface of the bottom layer. The critical angle limit at the time is greatly reduced, and the lateral light can be refracted outward from the first and second side faces 227' 229. Because of &, a portion of the lateral light directly illuminates outwardly, and another portion is exposed through the substrate top surface 225 after the bottom surface 225 of the bottom structure 222 is exposed. The bottom structure 222 and the top structure 224 correct and guide the lateral light that is trapped inside the component by the structure of the current light-emitting diode to become waste heat, thereby greatly increasing the brightness of the overall component while improving Reflecting back into the component 201216512, which in turn affects the waste heat generated by the light from the light-emitting diode portion, can cause overheating of the component. 5] a second preferred embodiment of the present invention and the first preferred embodiment
I其不同之處僅在於該第二較佳實施例的底部結構 古2八有-與該過渡結構223連結的第—頂面226，及一自 :第頂面226往該基板21方向延伸，且往該内部轴線γ 向凹陷的第-平滑弧面23〇。該底部結構222實質平行於 該基板21的橫剖面面積往遠離該基板21方向漸增。 忒底層221還具有一形成於該基板21並覆蓋該基板η 全部頂面的支樓部231 ’及一自該支撐部231往遠離該基板 21方向延伸的延㈣232，並使部份支揮部23ι的頂面續 露於外。該延伸部232具有-自該支標部231往遠離該基 板21方向延伸，且漸鄰近該内部軸線γ的第二平滑弧面 加土’使該延伸部232實質平行於該基板21的橫剖面面積 在祕該基板21的方向漸減。該第-平滑弧面230連續不 間斷地與第二平滑弧面233連接。 处自該電極單元24的第一電極241與第二電極242施加 電能時，於該底部結構222、該頂部結構224與該過渡結構 223產生部份朝向該第一平滑弧面230及第二平滑弧面233 的光，利用光在該等弧面23〇、233所形成多數不同角度的 入射角進行折射，使往側向的光具有更大的機率向外射出 ’從而提高發光二極體2整體的發光亮度。 特別說明的是’由於該過渡結構223與該頂部結構224 先經過曝光、顯影及第一次蝕刻的圖化案製程，接著該底 201216512 部結構222再經過第二次蝕刻製程，藉著此2次的蝕刻製 程，將該底部結構222及頂部結構224形成該等橫剖面積 ’ 遠離該過渡結構223而漸減的態樣。因此，可將先進行第 一次蝕刻製程的該過渡結構223與該頂部結構224對應地 視為一次平台（mesa) ’再進行該第二次姓刻製程的該底部結 構222對應地視為二次平台。 再說明的是’如以該等實際結構對應半導體物理的結 構分類，該底層221及該底部結構222對應為η型披覆層 (n-type cladding layer)，該過渡結構223對應為可產生光電 修 效應的複數量子井結構’該頂部結構224對應為p型披覆 層（p-type cladding layer)。然該等實際結構對應半導體物理 結構的分類不依此而受限，例如該η型彼覆層也可延伸至 該過渡結構223，應視實際需求而調整半導體物理的結構。 综上所述’本發明發光二極體2的該底部結構222及 頂部結構224的橫剖面面積分別往遠離該過渡結構223的 方向漸減，使得該過渡結構223經光電效應產生並朝向該 底部結構222及頂部結構224側面的光，再經由折射及反_ 射後’可順利向外射出’進而增加元件的發光亮度，並減 少所產生的光因臨界角度的限制無法向外釋放光能而轉變 成廢熱能累積於發光二極體2 β部的㈣，以增長元件壽 命’故確實能達成本發明之目的。 惟以上所述者，僅為本發明之較佳實施例而已，當不 能以此限；t本發明實施之範圍’即大凡依本發明申請專利 範圍及發明說明内容所作之簡單的等效變化與修飾，皆仍 10 201216512 屬本發明專利涵蓋之範圍内。 【圖式簡單說明】 圖1疋一俯視圖，說明目前一發光二極體； 圖2是一側視圖，說明該發光二極體； 圖3是一側視圖’說明本發明可側向出光的發光二極 體的一第一較佳實施例 圖4是一俯視圖’說明本發明的第一較佳實施例及第 二較佳實施例；及 圖5是一側視圖，說明該第二較佳實施例。 201216512 【主要元件符號說明】 2 ....... …·發光二極體 21…… —基板 22…… 蠢日日早元 221… •…底層 222 ··· •…底部結構 223 ··· •…過渡結構 224… …·頂部結構 225 ··· —底層頂面 226 ... —第 頂面 227 …. —第 側面 228… —第一底面 229… …·第二側面 230… …·第一平滑弧面 231 ··· •…支撐部 232 ···' …·延伸部 233… •…第二平滑弧面 24…… …·電極單元 241… …·第一電極 242 ···· •…第二電極 25…… •…透明導電層 γ....... •…内部軸線 12The only difference is that the bottom structure of the second preferred embodiment has a top surface 226 connected to the transition structure 223, and a top surface 226 extends toward the substrate 21. And the first smooth curved surface 23〇 is recessed toward the inner axis γ. The bottom structure 222 is substantially parallel to the cross-sectional area of the substrate 21 in a direction away from the substrate 21. The bottom layer 221 further has a branch portion 231 ′ formed on the substrate 21 and covering all the top surfaces of the substrate η and an extension 423 extending from the support portion 231 away from the substrate 21 and partially supporting the branch portion The top of 23ι is continuously exposed. The extending portion 232 has a second smooth curved surface extending from the supporting portion 231 away from the substrate 21 and gradually adjacent to the internal axis γ such that the extending portion 232 is substantially parallel to the cross section of the substrate 21. The area is gradually reduced in the direction of the substrate 21. The first smooth curved surface 230 is continuously and continuously connected to the second smooth curved surface 233. When the first electrode 241 and the second electrode 242 of the electrode unit 24 are applied with electric energy, the bottom structure 222, the top structure 224 and the transition structure 223 are partially directed toward the first smooth curved surface 230 and the second smoothing. The light of the curved surface 233 is refracted by the incident angle of the light at the different angles formed by the curved surfaces 23〇, 233, so that the lateral light has a greater probability of being emitted outwards, thereby improving the light emitting diode 2 The overall brightness of the light. Specifically, because the transition structure 223 and the top structure 224 are subjected to the exposure, development, and first etching process, then the bottom 201216512 structure 222 is subjected to a second etching process. The secondary etch process forms the bottom structure 222 and the top structure 224 in a manner that the cross-sectional area is tapered away from the transition structure 223. Therefore, the transition structure 223 that performs the first etching process first can be regarded as a mesa corresponding to the top structure 224. The bottom structure 222 that performs the second last name process is correspondingly regarded as two. Secondary platform. It is to be noted that the bottom layer 221 and the bottom structure 222 correspond to an n-type cladding layer, and the transition structure 223 corresponds to a photoelectric generation. The complex number of sub-well structures of the repair effect 'the top structure 224 corresponds to a p-type cladding layer. However, the classification of the physical structure corresponding to the physical structure is not limited thereto. For example, the n-type cladding layer may also extend to the transition structure 223, and the physical structure of the semiconductor should be adjusted according to actual needs. In summary, the cross-sectional area of the bottom structure 222 and the top structure 224 of the light-emitting diode 2 of the present invention is gradually decreased away from the transition structure 223, so that the transition structure 223 is generated by the photoelectric effect and faces the bottom structure. 222 and the light on the side of the top structure 224, after refraction and anti-reflection, can be smoothly emitted outward, thereby increasing the luminance of the component and reducing the amount of light generated due to the critical angle limitation. The waste heat energy is accumulated in (4) of the β portion of the light-emitting diode 2 to increase the life of the element, so that the object of the present invention can be achieved. However, the above is only the preferred embodiment of the present invention, and is not limited thereto; t is the scope of the invention's implementation, that is, the simple equivalent change of the scope of the invention and the description of the invention. Modifications, all still 10 201216512 are within the scope of the invention patent. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a top view showing a current light emitting diode; FIG. 2 is a side view showing the light emitting diode; FIG. 3 is a side view illustrating the lateral light emitting light of the present invention. A first preferred embodiment of the diode FIG. 4 is a top plan view illustrating a first preferred embodiment and a second preferred embodiment of the present invention; and FIG. 5 is a side view illustrating the second preferred embodiment example. 201216512 [Description of main component symbols] 2 ....... ...·Light-emitting diode 21...-Substrate 22... Stupid day and day 221... •...Bottom 222 ··· •...Bottom structure 223 ·· ·•...transition structure 224... top structure 225 ··· bottom layer 226 ... - top surface 227 .... - side surface 228 ... - first bottom surface 229 ... ... ... second side 230 ... ... First smooth curved surface 231 ····...Support portion 232 ·····Extension portion 233...•...Second smooth curved surface 24.........electrode unit 241...·first electrode 242 ···· •...second electrode 25... •...transparent conductive layer γ....... •...internal axis 12