KR101291153B1 - Light emitting diode and manufacturing method thereof - Google Patents

Light emitting diode and manufacturing method thereof Download PDF

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KR101291153B1
KR101291153B1 KR1020100139624A KR20100139624A KR101291153B1 KR 101291153 B1 KR101291153 B1 KR 101291153B1 KR 1020100139624 A KR1020100139624 A KR 1020100139624A KR 20100139624 A KR20100139624 A KR 20100139624A KR 101291153 B1 KR101291153 B1 KR 101291153B1
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South Korea
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nitride semiconductor
semiconductor layer
type nitride
light emitting
phosphor
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KR1020100139624A
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Korean (ko)
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KR20120077600A (en
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이종람
송양희
김범준
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포항공과대학교 산학협력단
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Priority to KR1020100139624A priority Critical patent/KR101291153B1/en
Priority to PCT/KR2011/008243 priority patent/WO2012091275A1/en
Publication of KR20120077600A publication Critical patent/KR20120077600A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material

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  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

The present invention relates to a light emitting diode and a method of manufacturing the same.
The light emitting diode according to the present invention includes a p-type electrode formed on a conductive substrate, a p-type nitride semiconductor layer formed on the p-type electrode, an active layer formed on the p-type nitride semiconductor layer, and an n-type nitride semiconductor layer formed on the active layer. And an n-type electrode formed on the n-type nitride semiconductor layer, an uneven portion is formed in a portion of the n-type nitride semiconductor layer, and the n-type electrode is formed on the n-type nitride semiconductor layer. The concave and convex portions are formed on the concave and convex portions, and the concave and convex portions formed in the n-type nitride semiconductor layer are filled with a phosphor.
According to the present invention, it is possible to provide a light emitting diode having a new structure and a method of manufacturing the same, which can dramatically increase the coating area and fluorescence conversion efficiency of a phosphor.

Description

LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF

The present invention relates to a light emitting diode and a method of manufacturing the same. More specifically, the present invention relates to a light emitting diode having a novel structure and a method of manufacturing the same, which can significantly increase the phosphor coating area of the present invention.

The white light source gallium nitride-based light emitting diodes have various forms of energy conversion efficiency, long life, high light directivity, low voltage driving, no preheating time and complicated driving circuit, and strong against shock and vibration. It is expected to be a solid-state lighting source that will replace the existing light sources such as incandescent lamps, fluorescent lamps and mercury lamps within the next five years due to the implementation of high quality lighting systems. In order to use a gallium nitride-based light emitting diode as a white light source to replace a mercury lamp or a fluorescent lamp, it must not only have excellent thermal stability but also be able to emit high power at low power consumption. In order to emit light of high power, researches are being conducted to change the structure of the light emitting diodes. Horizontal gallium nitride-based light emitting diodes, which are widely used as white light sources, have the advantages of relatively low manufacturing cost and simple manufacturing process, but they are not suitable for being used as a high power light source with high applied current and large area. have. A vertical structure light emitting diode is a device that overcomes the disadvantages of the horizontal structure light emitting diode and is easy to apply a large area high power light emitting diode. Such vertical structured light emitting diodes have various advantages compared to conventional horizontal structured devices. In the vertical light emitting diode, the current spreading resistance is small, so a very uniform current spreading can be obtained, resulting in a lower operating voltage and a large light output, and a smooth heat dissipation through a metal or semiconductor substrate having good thermal conductivity. Long device life and significantly improved high power operation are possible. In this vertical structured light emitting diode, the maximum applied current is increased by 3-4 or more compared to the horizontal structured light emitting diode, so it is certain that it will be widely used as a white light source for lighting. Currently, Nichia chemical of Japan, Philips Lumileds of USA, Osram of Germany Leading overseas light emitting diode companies and domestic companies such as Seoul Semiconductor, Samsung Electro-Mechanics and LG Innotek are actively conducting R & D to commercialize gallium nitride-based vertical light emitting diodes and improve their performance. Selling products.

In addition to researches to change the structure of the light emitting diodes, researches for increasing the fluorescence efficiency for white light emitting light emitting diodes are being conducted. In order to use the light emitting diode as a white light source, the phosphor is applied in the package step after the chip fabrication step. In this case, the phosphor absorbs the light emitted from the chip and emits light of different wavelengths, and the light conversion efficiency of the phosphor is very important for making a white light source. In order to make a highly efficient white light source, the light conversion efficiency of the phosphor and the light conversion efficiency of the phosphor must be improved simultaneously. However, since the phosphor is coated on the outside of the chip, the phosphor coating area is small, and the phosphor is significantly separated from the MQW where light is generated. For this reason, many researches have been conducted on the structure of the light emitting diode for disposing the light emitting MQW and the phosphor in the vicinity of the phosphor coating area, but there is no clear research result.

The present invention has been made in an effort to provide a light emitting diode having a novel structure and a method of manufacturing the same, which can dramatically increase the coating area and fluorescent conversion efficiency of a phosphor.

The light emitting diode according to an aspect of the present invention for solving this problem is a p-type electrode formed on a conductive substrate, a p-type nitride semiconductor layer formed on the p-type electrode, an active layer formed on the p-type nitride semiconductor layer, An n-type nitride semiconductor layer formed on the active layer and an n-type electrode formed on the n-type nitride semiconductor layer, and an uneven portion is formed in a portion of the n-type nitride semiconductor layer, and the n-type electrode is It is formed on the convex part of the uneven part formed in the n-type nitride semiconductor layer, and the recessed part of the uneven part formed in the said n-type nitride semiconductor layer is filled with fluorescent substance.

In the light emitting diode according to the aspect of the present invention, it is characterized in that it further comprises a transparent electrode formed between the n-type nitride semiconductor layer and the n-type electrode.

In the light emitting diode according to an aspect of the present invention, the transparent electrode is characterized in that it comprises at least one selected from the group consisting of ITO X , ZnO X , CaO X , WO X , TiO X.

In the light emitting diode according to an aspect of the present invention, the thickness of the transparent electrode is characterized in that 10nm or more and 300nm or less.

A light emitting diode according to an aspect of the present invention, further comprising a protective film formed between the recessed portion and the phosphor formed in the n-type nitride semiconductor layer.

In the light emitting diode according to an aspect of the present invention, the protective film is characterized in that it comprises at least one selected from the group consisting of SiO X , SiN X , MgO X , AlO X , GaO X.

In the light emitting diode according to the aspect of the present invention, the recessed portion is formed in a portion of the p-type nitride semiconductor layer through the n-type nitride semiconductor layer and the active layer.

In the light emitting diode according to the aspect of the present invention, the phosphor filled in the recessed portion of the uneven portion is two or more, and in the recessed region adjacent to the active layer, electron-hole energy lost by non-radiative recombination in the active layer is resonance energy It is characterized by being filled with a phosphor that can receive visible light through the transmission (FRET, FResonance Energy Transfer, fret) phenomenon to generate visible light.

According to another aspect of the present invention, a light emitting diode includes a substrate on which a pattern for scattering and reflecting incident light is formed, formed on the substrate, and having a step with the first region and the first region and exposed to the outside. An n-type nitride semiconductor layer including a second region, an active layer formed on the first region of the n-type nitride semiconductor layer, a p-type nitride semiconductor layer formed on the active layer, and formed on a second region of the n-type nitride semiconductor layer and an p-type electrode formed on the n-type electrode and the p-type nitride semiconductor layer, wherein the uneven portion penetrates through the p-type nitride semiconductor layer and the active layer and is formed in a partial region of the n-type nitride semiconductor layer. The main recess is characterized in that the phosphor is filled.

In the light emitting diode according to another aspect of the present invention, the light emitting diode further comprises a transparent electrode formed between the p-type nitride semiconductor layer and the p-type electrode.

In the light emitting diode according to another aspect of the present invention, the transparent electrode is characterized in that it comprises at least one selected from the group consisting of ITO X , ZnO X , CaO X , WO X , TiO X.

In the light emitting diode according to another aspect of the present invention, the thickness of the transparent electrode is characterized in that 10nm or more and 300nm or less.

In the light emitting diode according to another aspect of the present invention, it characterized in that it further comprises a protective film formed between the recessed portion and the phosphor.

In the light emitting diode according to another aspect of the invention, the protective film is characterized in that it comprises at least one selected from the group consisting of SiO X , SiN X , MgO X , AlO X , GaO X.

In the light emitting diode according to another aspect of the present invention, the phosphor filled in the recessed portion of the uneven portion is two or more, and in the recessed region adjacent to the active layer, electron-hole energy lost by non-radiative recombination in the active layer is resonance energy It is characterized by being filled with a phosphor that can receive visible light through the transmission (FRET, FResonance Energy Transfer, fret) phenomenon to generate visible light.
According to an aspect of the present invention, there is provided a light emitting diode manufacturing method in which a p-type electrode, a p-type nitride semiconductor layer, an active layer, and an n-type nitride semiconductor layer are formed on a conductive substrate. A second step of forming an uneven portion, a third step of filling a phosphor in the uneven portion of the uneven portion, a fourth step of forming a transparent electrode on the convex portion of the n-type nitride semiconductor layer and the phosphor and on the n-type nitride semiconductor layer and a fifth step of forming an n-type electrode.

delete

In the method of manufacturing a light emitting diode according to an aspect of the present invention, the recessed portion is formed in a portion of the p-type nitride semiconductor layer through the n-type nitride semiconductor layer and the active layer.

In the method of manufacturing a light emitting diode according to an aspect of the present invention, there are two or more kinds of phosphors filled in the recessed portions of the uneven portions, and electron-hole energy lost by non-radiative recombination in the active layer is provided in the recessed portions adjacent to the active layer. It is characterized by being filled with a phosphor that can receive visible light through the resonance energy transfer (FRET, FResonance Energy Transfer, fret) phenomenon to generate visible light.
According to another aspect of the present invention, there is provided a light emitting diode manufacturing method comprising: forming an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on a substrate on which a pattern for scattering and reflecting incident light is formed; a second step of exposing a portion of the n-type nitride semiconductor layer by mesa etching a portion of the p-type nitride semiconductor layer, the active layer and the n-type nitride semiconductor layer, and penetrating the n-type nitride semiconductor layer and the active layer A third step of forming an uneven portion up to a partial region of the type nitride semiconductor layer, a fourth step of filling the recessed portion of the uneven portion, a fifth step of forming a transparent electrode on the convex portion of the p-type nitride semiconductor layer and the phosphor; Forming a p-type electrode on the transparent electrode and forming an n-type electrode on an exposed region of the n-type nitride semiconductor layer; It is sex.

delete

In the method of manufacturing a light emitting diode according to another aspect of the present invention, there are two or more kinds of phosphors filled in the recesses of the recesses, and the region of the recesses adjacent to the active layer has electron-hole energy lost by non-radiative recombination in the active layer. It is characterized by being filled with a phosphor that can receive visible light through the resonance energy transfer (FRET, FResonance Energy Transfer, fret) phenomenon to generate visible light.

According to the present invention, it is possible to provide a light emitting diode having a new structure and a method of manufacturing the same, which can dramatically increase the coating area and fluorescence conversion efficiency of a phosphor.

More specifically, the present invention is a device technology made by inserting a phosphor into a pillar-type or hole-type light emitting diode fabricated using dry etching after forming a pattern using a photolithography and nanoimprint method capable of a large area process It is immediately applicable to the manufacturing process of light emitting diodes. In general, the light emitting diode has a low fluorescence efficiency because the phosphor is coated on the periphery of the chip after chip formation, and the phosphor coating area is narrow and is far from the MQW generated by the light. However, in the device structure used in the present invention, the phosphor is coated. Not only does it increase the area, it also dramatically increases the fluorescence conversion efficiency by inserting the phosphor near the MQW generated by the light, and is an energy-saving environment that can accelerate the advent of the solid-state lighting era using the white light source gallium nitride-based light emitting diode. Technology.

1 is a view showing a light emitting diode according to a first embodiment of the present invention.
2 and 3 are views showing a modification of the first embodiment of the present invention.
4 is a view showing a light emitting diode according to a second embodiment of the present invention.
5 is a view showing a modification of the second embodiment of the present invention.
6 to 14 illustrate a method of manufacturing a light emitting diode according to a first embodiment of the present invention.
15 to 20 illustrate a method of manufacturing a light emitting diode according to a second exemplary embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a view showing a light emitting diode according to a first embodiment of the present invention, Figure 2 and Figure 3 is a view showing a modification of the first embodiment of the present invention.

1 to 3, the light emitting diode according to the first embodiment of the present invention is a conductive substrate 100, p-type electrode 110, p-type nitride semiconductor layer 120, active layer 130, n-type The nitride semiconductor layer 140, the passivation layer 150, the phosphor 160, the transparent electrode 170, and the n-type electrode 180 are configured to be included.

The p-type electrode 110 is formed on the conductive substrate 100. The p-type electrode 110 is also conductive and also functions as a reflective film that reflects light emitted from the active layer 130 described later.

The p-type nitride semiconductor layer 120 is formed on the p-type electrode 110. The p-type nitride semiconductor layer 120 may be GaN doped with a p-type.

The active layer 130, that is, the multi quantum well (MQW) layer, is formed between the p-type nitride semiconductor layer 120 and the n-type nitride semiconductor layer 140, which will be described later with the p-type electrode 110. The excitons generated by the combination of electrons and holes according to the potential difference applied through the n-type electrode 180 emit light.

The n-type nitride semiconductor layer 140 is formed on the active layer 130 and may be n-type doped GaN.

Uneven portions are formed in some regions of the n-type nitride semiconductor layer 140. This uneven part is comprised from the uneven part which is the recessed area | region, and the uneven part which is the protruding area | region.

As an example, the recessed portion may be formed to almost penetrate the n-type nitride semiconductor layer 140, that is, the portion directly above the active layer 130.

As another example, as shown in FIGS. 2 and 3, the recessed portion may be formed in a portion of the p-type nitride semiconductor layer 121 through the n-type nitride semiconductor layer 141 and the active layer 131. . That is, the recessed portion may be formed up to the portion directly above the p-type electrode 110.

The phosphor 160 is filled in the recessed portion of the uneven portion formed in the n-type nitride semiconductor layer 140. That is, by forming the uneven portion as described above and filling the phosphor 160 in the uneven portion of the uneven portion, the phosphor coating area can be greatly increased.

On the other hand, the phosphor filled in the recessed portion may be two or more kinds.

In addition, as shown in FIGS. 2 and 3, when the recesses and protrusions are formed in some regions of the p-type nitride semiconductor layer 121 through the n-type nitride semiconductor layer 141 and the active layer 131, the active layer ( In the recessed area A adjacent to 131, electron-hole energy lost by non-radiative recombination in the active layer may be received through a resonance energy transfer (FRET) phenomenon to generate visible light. It is preferable that the phosphor is filled. According to this configuration, there is an effect that the fluorescence conversion efficiency of the phosphor dramatically increases.

The transparent electrode 170 is formed between the n-type nitride semiconductor layer 140 and the n-type electrode 180. For example, the transparent electrode 170 may include one or more selected from the group consisting of ITO X , ZnO X , CaO X , WO X , TiO X. In addition, any material having excellent light transmittance and electrical conductivity may be used as a material of the transparent electrode 170.

The thickness of the transparent electrode 170 is preferably 10 nm or more and 300 nm or less. If the thickness of the transparent electrode 170 is less than 10 nm, it may not function properly as an electrode for flowing current. If the thickness of the transparent electrode 170 exceeds 300 nm, the light transmittance may be deteriorated.

The n-type electrode 180 is formed on the n-type nitride semiconductor layer 140 and may be formed on, for example, the convex portion of the uneven portion to increase light transmittance.

Meanwhile, the first embodiment of the present invention may further include a passivation layer 150, and the passivation layer 150 is formed between the recessed portions of the uneven portions formed in the n-type nitride semiconductor layer 140 and the phosphor 160. , to protect the n-type nitride semiconductor layer 140.

The passivation layer 150 may include one or more selected from the group consisting of SiO X , SiN X , MgO X , AlO X , GaO X.

4 is a view showing a light emitting diode according to a second embodiment of the present invention, Figure 5 is a view showing a modification of a second embodiment of the present invention.

4 and 5, the light emitting diode according to the second embodiment of the present invention is a substrate 200, n-type nitride semiconductor layer 210, active layer 220, p-type nitride semiconductor layer 230, transparent The electrode 260 may be configured to include an n-type electrode 280 and a p-type electrode 270.

The substrate 200 is formed with a pattern for scattering and reflecting light incident from the active layer 220 to be described later. For example, the substrate 200 may be made of sapphire (Al 2 O 3).

The n-type nitride semiconductor layer 210 is formed on the substrate 200 and includes a first region and a second region.

The first region is a region where the active layer 220 to be described later is formed. The second region is a region having a step with the first region and exposed to the outside.

The active layer 220 is formed on the first region of the n-type nitride semiconductor layer 210.

The p-type nitride semiconductor layer 230 is formed on the active layer 220.

The transparent electrode 260 is formed between the p-type nitride semiconductor layer 230 and the p-type electrode 270 described later. For example, the transparent electrode 260 may include one or more selected from the group consisting of ITO X , ZnO X , CaO X , WO X , TiO X. In addition, any material having excellent light transmittance and electrical conductivity may be used as a material of the transparent electrode 260.

It is preferable that the thickness of the transparent electrode 260 is 10 nm or more and 300 nm or less. If the thickness of the transparent electrode 260 is less than 10 nm, it does not function properly as an electrode for flowing current. If the thickness of the transparent electrode 260 exceeds 300 nm, the light transmittance is deteriorated.

The n-type electrode 280 is formed on the second region of the n-type nitride semiconductor layer 210, and the p-type electrode 270 is formed on the p-type nitride semiconductor layer 230 via the transparent electrode 260. Formed.

The uneven portion, which is a feature of the second embodiment of the present invention, extends through the p-type nitride semiconductor layer 230 and the active layer 220 to a part of the n-type nitride semiconductor layer 210, and the recessed portion has a phosphor ( 250) is filled.

For example, as shown in FIG. 5, the phosphors 251 filled in the recesses of the recesses and protrusions may be two or more kinds, and in the recesses region B adjacent to the active layer 220, electrons lost due to non-radiative recombination in the active layer 220. It is desirable to fill the phosphor that can receive visible energy through the resonance energy transfer (FRET, FResonance Energy Transfer (FRET) phenomenon) to generate visible light. According to this configuration, there is an effect that the fluorescence conversion efficiency of the phosphor dramatically increases.

Meanwhile, the second embodiment of the present invention may further include a passivation layer 240, and the passivation layer 240 is formed between the recessed portion and the phosphor 250 formed in the n-type nitride semiconductor layer 210. , to protect the n-type nitride semiconductor layer 210.

The passivation layer 240 may include one or more selected from the group consisting of SiO X , SiN X , MgO X , AlO X , GaO X.

6 to 14 illustrate a method of manufacturing a light emitting diode according to a first embodiment of the present invention.

6 to 14, a light emitting diode manufacturing method according to a first embodiment of the present invention includes a p-type electrode 110, a p-type nitride semiconductor layer 120, and an active layer 130 on a conductive substrate 100. a first step of forming the n-type nitride semiconductor layer 140, a second step of forming an uneven portion in a portion of the n-type nitride semiconductor layer 140, a third step of filling the phosphor 160 in the uneven portion of the uneven portion, a fourth step of forming the transparent electrode 170 on the convex portion of the n-type nitride semiconductor layer 140 and the phosphor 160 and a fifth step of forming the n-type electrode 180 on the n-type nitride semiconductor layer 140. It consists of steps.

First, referring to FIG. 6, in the first step, the p-type electrode 110, the p-type nitride semiconductor layer 120, the active layer 130, and the n-type nitride semiconductor layer 140 are formed on the conductive substrate 100. The process is performed.

Next, referring to FIGS. 7 and 8, in the second step, after the dry etching protective film M is formed on the n-type nitride semiconductor layer 140, the dry etching protective film M is used as a mask to form n-type. A process of forming an uneven portion in a portion of the nitride semiconductor layer 140 is performed. This uneven portion is composed of a recessed area and a recessed area.

For example, the concave portion of the concave-convex portion may be formed to almost penetrate the n-type nitride semiconductor layer 140, that is, to the portion directly above the active layer 130.

Next, referring to FIGS. 9 and 10, in the third step, a process of filling the phosphor 160 with recesses of the uneven portion is performed.

First, a protective film 150 for protecting the n-type nitride semiconductor layer 140 is formed on the recessed portion, and then the phosphor 160 is filled. The passivation layer 150 may include one or more selected from the group consisting of SiO X , SiN X , MgO X , AlO X , and GaO X.

Referring to FIG. 11, the n-type electrode 180 may be formed directly on the n-type nitride semiconductor layer 140, but as shown in FIG. 12, it is preferable to first form the transparent electrode 170.

That is, referring to FIG. 12, in the fourth step, a process of forming the transparent electrode 170 on the convex portion and the phosphor of the n-type nitride semiconductor layer 140 is performed.

For example, the transparent electrode 170 may include one or more selected from the group consisting of ITO X , ZnO X , CaO X , WO X , TiO X. In addition, any material having excellent light transmittance and electrical conductivity may be used as a material of the transparent electrode 170.

The thickness of the transparent electrode 170 is preferably 10 nm or more and 300 nm or less. If the thickness of the transparent electrode 170 is less than 10 nm, it may not function properly as an electrode for flowing current. If the thickness of the transparent electrode 170 exceeds 300 nm, the light transmittance may be deteriorated.

Next, referring to FIG. 13, in the fifth step, a process of forming the n-type electrode 180 on the n-type nitride semiconductor layer 140 via the transparent electrode 170 is performed. For example, the n-type electrode 180 may be formed on the convex portion of the uneven portion to increase light transmittance.

As shown in FIGS. 13 and 14, the recessed portion may be formed in a portion of the p-type nitride semiconductor layer 121 through the n-type nitride semiconductor layer 141 and the active layer 131. That is, the recessed portion may be formed up to the portion directly above the p-type electrode 110.

The phosphor 160 is filled in the recessed portion of the uneven portion formed in the n-type nitride semiconductor layer 140. That is, by forming the uneven portion as described above and filling the phosphor 160 in the uneven portion of the uneven portion, the phosphor coating area can be greatly increased.

On the other hand, the phosphor filled in the recessed portion may be two or more kinds.

In addition, as shown in FIGS. 13 and 14, when the concave-convex portion is formed through the n-type nitride semiconductor layer 141 and the active layer 131 to a part of the p-type nitride semiconductor layer 121, the active layer ( The recessed region adjacent to 131 is filled with a phosphor capable of generating visible light by receiving electron-hole energy lost by non-radiative recombination in the active layer through a resonance energy transfer (FRET) phenomenon. Is preferred. According to this configuration, there is an effect that the fluorescence conversion efficiency of the phosphor dramatically increases.

15 to 20 illustrate a method of manufacturing a light emitting diode according to a second exemplary embodiment of the present invention.

15 to 20, in the method of manufacturing a light emitting diode according to a second embodiment of the present invention, an n-type nitride semiconductor layer 210 is formed on a substrate 200 on which a pattern for scattering and reflecting incident light is formed. ), A first step of forming the active layer 220 and the p-type nitride semiconductor layer 230, mesa-etched a portion of the p-type nitride semiconductor layer 230, the active layer 220 and the n-type nitride semiconductor layer 210 A second step of exposing a portion of the n-type nitride semiconductor layer 210, the first through the p-type nitride semiconductor layer 230 and the active layer 220 to form the uneven portion to the partial region of the n-type nitride semiconductor layer 210 Step 3, a fourth step of filling the recesses in the uneven portion, the fifth step of forming the transparent electrode 260 on the convex portion and the phosphor of the p-type nitride semiconductor layer 230 and the p-type electrode on the transparent electrode 260 270 to form the n-type electrode 280 on the exposed region of the n-type nitride semiconductor layer 210. It is constituted by a sixth step of sex.

First, referring to FIG. 15, in the first step, an n-type nitride semiconductor layer 210, an active layer 220, and a p-type nitride semiconductor are formed on a substrate 200 on which a pattern for scattering and reflecting incident light is formed. The process of forming layer 230 is performed.

Next, referring to FIG. 16, in the second step, a portion of the p-type nitride semiconductor layer 230, the active layer 220, and the n-type nitride semiconductor layer 210 may be mesa-etched to form the n-type nitride semiconductor layer 210. The process of exposing a part to the outside is performed.

Next, referring to FIG. 17, in the third step, a process of forming the uneven portion through the p-type nitride semiconductor layer 230 and the active layer 220 to a part of the n-type nitride semiconductor layer 210 is performed. This uneven part consists of a uneven part and an uneven part. The recess is the recessed area, and the convex part is the protruding area. The recessed portion may be formed up to a portion directly above the p-type electrode 270.

Next, referring to FIG. 18, in the fourth step, after forming a protective film on the concave-convex portion, a process of filling the phosphor is performed.

The phosphor is filled in the recessed portion of the uneven portion. That is, by forming the uneven portion as described above, and filling the phosphor in the uneven portion of the uneven portion, the phosphor coating area can be greatly increased.

On the other hand, the phosphor filled in the recessed portion may be two or more kinds, and the recessed portion is formed in the region of the p-type nitride semiconductor layer 230 through the n-type nitride semiconductor layer 210 and the active layer 220 In the recess area adjacent to the active layer 220, electron-hole energy lost by non-radiative recombination in the active layer may be transmitted through a resonance energy transfer (FRET) phenomenon to generate visible light. It is preferable that the phosphor is filled. According to this configuration, there is an effect that the fluorescence conversion efficiency of the phosphor dramatically increases.

Next, referring to FIG. 19, in the fifth step, a process of forming the transparent electrode 260 on the convex portion and the phosphor of the p-type nitride semiconductor layer 230 is performed.

Next, referring to FIG. 20, in the sixth step, the p-type electrode 270 is formed on the transparent electrode 260, and the n-type electrode 280 is formed on the exposed region of the n-type nitride semiconductor layer 210. The process is performed.

As described in detail above, according to the present invention, there is an effect of providing a light emitting diode having a new structure and a method of manufacturing the same, which can dramatically increase the coating area and fluorescent conversion efficiency of the phosphor.

More specifically, the present invention is a device technology made by inserting a phosphor into a pillar-type or hole-type light emitting diode fabricated using dry etching after forming a pattern using a photolithography and nanoimprint method capable of a large area process It is immediately applicable to the manufacturing process of light emitting diodes. In general, the light emitting diode has a low fluorescence efficiency because the phosphor is coated on the periphery of the chip after chip formation, and the phosphor coating area is narrow and is far from the MQW generated by the light. Not only does it increase the area, it also dramatically increases the fluorescence conversion efficiency by inserting the phosphor near the MQW generated by the light, and is an energy-saving environment that can accelerate the advent of the solid-state lighting era using the white light source gallium nitride-based light emitting diode. Technology.

Although the preferred embodiments of the present invention have been disclosed for illustrative purposes, those skilled in the art will appreciate that various modifications, additions and substitutions are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims. In addition, it is obvious that any person skilled in the art may make various modifications and imitations without departing from the scope of the technical idea of the present invention.

100: conductive substrate
110, 270 p-type electrode
120, 121, 230: p-type nitride semiconductor layer
130, 131, 220: active layer
140, 141, and 210: n-type nitride semiconductor layer
150, 151, 240: protective shield
160, 161, 162, 250: phosphor
170 and 260: transparent electrode
180, 280: n-type electrode
200: substrate
M: dry etching protective film

Claims (20)

In the light emitting diode,
A p-type electrode formed on the conductive substrate;
A p-type nitride semiconductor layer formed on the p-type electrode;
An active layer formed on the p-type nitride semiconductor layer;
An n-type nitride semiconductor layer formed on the active layer; And
An n-type electrode formed on the n-type nitride semiconductor layer,
Uneven portions are formed in some regions of the n-type nitride semiconductor layer,
The n-type electrode is formed on the convex portion of the uneven portion formed in the n-type nitride semiconductor layer,
Phosphors are filled in recesses of the uneven portions formed in the n-type nitride semiconductor layer,
The recessed portion is formed in a portion of the p-type nitride semiconductor layer through the n-type nitride semiconductor layer and the active layer,
The phosphor filled in the recessed portion of the uneven portion is two or more kinds,
The recessed portion adjacent to the active layer is filled with a phosphor that is capable of generating visible light by receiving electron-hole energy lost by non-radiative recombination in the active layer through a resonance energy transfer (FRET) phenomenon. Light emitting diodes, characterized in that. The method according to claim 1,
And a transparent electrode formed between the n-type nitride semiconductor layer and the n-type electrode. The method of claim 2,
The transparent electrode is light emitting diode, characterized in that it comprises at least one selected from the group consisting of ITO X , ZnO X , CaO X , WO X , TiO X. The method of claim 2,
The thickness of the transparent electrode, characterized in that 10nm or more and 300nm or less, the light emitting diode. The method according to claim 1,
A light emitting diode further comprising a protective film formed between the recessed portion of the uneven portion formed in the n-type nitride semiconductor layer and the phosphor. 6. The method of claim 5,
The passivation layer is characterized in that it comprises at least one selected from the group consisting of SiO X , SiN X , MgO X , AlO X , GaO X. delete delete In the light emitting diode,
A substrate on which a pattern for scattering and reflecting incident light is formed;
An n-type nitride semiconductor layer formed on the substrate and having a first region and a second region having a step difference from the first region and exposed to the outside;
An active layer formed on the first region of the n-type nitride semiconductor layer;
A p-type nitride semiconductor layer formed on the active layer;
An n-type electrode formed on the second region of the n-type nitride semiconductor layer; And
A p-type electrode formed on the p-type nitride semiconductor layer,
An uneven portion is formed through a portion of the n-type nitride semiconductor layer through the p-type nitride semiconductor layer and the active layer,
The recessed portion of the uneven portion is filled with a phosphor,
The phosphor filled in the recessed portion of the uneven portion is two or more kinds,
The recessed portion adjacent to the active layer is filled with a phosphor that is capable of generating visible light by receiving electron-hole energy lost by non-radiative recombination in the active layer through a resonance energy transfer (FRET) phenomenon. Light emitting diodes, characterized in that. 10. The method of claim 9,
And a transparent electrode formed between the p-type nitride semiconductor layer and the p-type electrode. The method of claim 10,
The transparent electrode is light emitting diode, characterized in that it comprises at least one selected from the group consisting of ITO X , ZnO X , CaO X , WO X , TiO X. 12. The method of claim 11,
The thickness of the transparent electrode, characterized in that 10nm or more and 300nm or less, the light emitting diode. 10. The method of claim 9,
A light emitting diode, characterized in that it further comprises a protective film formed between the recessed portion and the phosphor. The method of claim 13,
The passivation layer is characterized in that it comprises at least one selected from the group consisting of SiO X , SiN X , MgO X , AlO X , GaO X. delete In the light emitting diode manufacturing method,
A first step of forming a p-type electrode, a p-type nitride semiconductor layer, an active layer, and an n-type nitride semiconductor layer on the conductive substrate;
Forming a concave-convex portion in a portion of the n-type nitride semiconductor layer;
A third step of filling the recesses in the recesses of the recesses;
A fourth step of forming a transparent electrode on the convex portion of the n-type nitride semiconductor layer and the phosphor; And
A fifth step of forming an n-type electrode on the n-type nitride semiconductor layer,
The recessed portion is formed in a portion of the p-type nitride semiconductor layer through the n-type nitride semiconductor layer and the active layer,
The phosphor filled in the recessed portion of the uneven portion is two or more kinds,
The recessed portion adjacent to the active layer is filled with a phosphor that is capable of generating visible light by receiving electron-hole energy lost by non-radiative recombination in the active layer through a resonance energy transfer (FRET) phenomenon. A method of manufacturing a light emitting diode, characterized in that. delete delete In the light emitting diode manufacturing method,
A first step of forming an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer on a substrate on which a pattern for scattering and reflecting incident light is formed;
A second step of mesa-etching a portion of the p-type nitride semiconductor layer, the active layer and the n-type nitride semiconductor layer to expose a portion of the n-type nitride semiconductor layer;
Forming a concave-convex portion in the partial region of the n-type nitride semiconductor layer through the p-type nitride semiconductor layer and the active layer;
A fourth step of filling the recesses in the recessed portions;
A fifth step of forming a transparent electrode on the convex portion of the p-type nitride semiconductor layer and the phosphor; And
Forming a p-type electrode on the transparent electrode and forming an n-type electrode on an exposed region of the n-type nitride semiconductor layer,
The phosphor filled in the recessed portion of the uneven portion is two or more kinds,
The recessed portion adjacent to the active layer is filled with a phosphor that is capable of generating visible light by receiving electron-hole energy lost by non-radiative recombination in the active layer through a resonance energy transfer (FRET) phenomenon. A method of manufacturing a light emitting diode, characterized in that.
delete
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