KR101291153B1 - Light emitting diode and manufacturing method thereof - Google Patents
Light emitting diode and manufacturing method thereof Download PDFInfo
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- KR101291153B1 KR101291153B1 KR1020100139624A KR20100139624A KR101291153B1 KR 101291153 B1 KR101291153 B1 KR 101291153B1 KR 1020100139624 A KR1020100139624 A KR 1020100139624A KR 20100139624 A KR20100139624 A KR 20100139624A KR 101291153 B1 KR101291153 B1 KR 101291153B1
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- nitride semiconductor
- semiconductor layer
- type nitride
- light emitting
- phosphor
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 239000004065 semiconductor Substances 0.000 claims abstract description 149
- 150000004767 nitrides Chemical class 0.000 claims abstract description 147
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 83
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims description 25
- 230000001681 protective effect Effects 0.000 claims description 12
- 230000006798 recombination Effects 0.000 claims description 12
- 238000005215 recombination Methods 0.000 claims description 12
- 238000011049 filling Methods 0.000 claims description 11
- 238000002161 passivation Methods 0.000 claims description 10
- 238000002165 resonance energy transfer Methods 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 2
- 238000002866 fluorescence resonance energy transfer Methods 0.000 claims 4
- 238000006243 chemical reaction Methods 0.000 abstract description 14
- 239000011248 coating agent Substances 0.000 abstract description 12
- 238000000576 coating method Methods 0.000 abstract description 12
- 230000008569 process Effects 0.000 description 13
- 229910002601 GaN Inorganic materials 0.000 description 8
- 238000002834 transmittance Methods 0.000 description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000011160 research Methods 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000011982 device technology Methods 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000007792 addition Methods 0.000 description 1
- 230000005662 electromechanics Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
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- Engineering & Computer Science (AREA)
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The present invention relates to a light emitting diode and a method of manufacturing the same.
The light emitting diode according to the present invention includes a p-type electrode formed on a conductive substrate, a p-type nitride semiconductor layer formed on the p-type electrode, an active layer formed on the p-type nitride semiconductor layer, and an n-type nitride semiconductor layer formed on the active layer. And an n-type electrode formed on the n-type nitride semiconductor layer, an uneven portion is formed in a portion of the n-type nitride semiconductor layer, and the n-type electrode is formed on the n-type nitride semiconductor layer. The concave and convex portions are formed on the concave and convex portions, and the concave and convex portions formed in the n-type nitride semiconductor layer are filled with a phosphor.
According to the present invention, it is possible to provide a light emitting diode having a new structure and a method of manufacturing the same, which can dramatically increase the coating area and fluorescence conversion efficiency of a phosphor.
Description
The present invention relates to a light emitting diode and a method of manufacturing the same. More specifically, the present invention relates to a light emitting diode having a novel structure and a method of manufacturing the same, which can significantly increase the phosphor coating area of the present invention.
The white light source gallium nitride-based light emitting diodes have various forms of energy conversion efficiency, long life, high light directivity, low voltage driving, no preheating time and complicated driving circuit, and strong against shock and vibration. It is expected to be a solid-state lighting source that will replace the existing light sources such as incandescent lamps, fluorescent lamps and mercury lamps within the next five years due to the implementation of high quality lighting systems. In order to use a gallium nitride-based light emitting diode as a white light source to replace a mercury lamp or a fluorescent lamp, it must not only have excellent thermal stability but also be able to emit high power at low power consumption. In order to emit light of high power, researches are being conducted to change the structure of the light emitting diodes. Horizontal gallium nitride-based light emitting diodes, which are widely used as white light sources, have the advantages of relatively low manufacturing cost and simple manufacturing process, but they are not suitable for being used as a high power light source with high applied current and large area. have. A vertical structure light emitting diode is a device that overcomes the disadvantages of the horizontal structure light emitting diode and is easy to apply a large area high power light emitting diode. Such vertical structured light emitting diodes have various advantages compared to conventional horizontal structured devices. In the vertical light emitting diode, the current spreading resistance is small, so a very uniform current spreading can be obtained, resulting in a lower operating voltage and a large light output, and a smooth heat dissipation through a metal or semiconductor substrate having good thermal conductivity. Long device life and significantly improved high power operation are possible. In this vertical structured light emitting diode, the maximum applied current is increased by 3-4 or more compared to the horizontal structured light emitting diode, so it is certain that it will be widely used as a white light source for lighting. Currently, Nichia chemical of Japan, Philips Lumileds of USA, Osram of Germany Leading overseas light emitting diode companies and domestic companies such as Seoul Semiconductor, Samsung Electro-Mechanics and LG Innotek are actively conducting R & D to commercialize gallium nitride-based vertical light emitting diodes and improve their performance. Selling products.
In addition to researches to change the structure of the light emitting diodes, researches for increasing the fluorescence efficiency for white light emitting light emitting diodes are being conducted. In order to use the light emitting diode as a white light source, the phosphor is applied in the package step after the chip fabrication step. In this case, the phosphor absorbs the light emitted from the chip and emits light of different wavelengths, and the light conversion efficiency of the phosphor is very important for making a white light source. In order to make a highly efficient white light source, the light conversion efficiency of the phosphor and the light conversion efficiency of the phosphor must be improved simultaneously. However, since the phosphor is coated on the outside of the chip, the phosphor coating area is small, and the phosphor is significantly separated from the MQW where light is generated. For this reason, many researches have been conducted on the structure of the light emitting diode for disposing the light emitting MQW and the phosphor in the vicinity of the phosphor coating area, but there is no clear research result.
The present invention has been made in an effort to provide a light emitting diode having a novel structure and a method of manufacturing the same, which can dramatically increase the coating area and fluorescent conversion efficiency of a phosphor.
The light emitting diode according to an aspect of the present invention for solving this problem is a p-type electrode formed on a conductive substrate, a p-type nitride semiconductor layer formed on the p-type electrode, an active layer formed on the p-type nitride semiconductor layer, An n-type nitride semiconductor layer formed on the active layer and an n-type electrode formed on the n-type nitride semiconductor layer, and an uneven portion is formed in a portion of the n-type nitride semiconductor layer, and the n-type electrode is It is formed on the convex part of the uneven part formed in the n-type nitride semiconductor layer, and the recessed part of the uneven part formed in the said n-type nitride semiconductor layer is filled with fluorescent substance.
In the light emitting diode according to the aspect of the present invention, it is characterized in that it further comprises a transparent electrode formed between the n-type nitride semiconductor layer and the n-type electrode.
In the light emitting diode according to an aspect of the present invention, the transparent electrode is characterized in that it comprises at least one selected from the group consisting of ITO X , ZnO X , CaO X , WO X , TiO X.
In the light emitting diode according to an aspect of the present invention, the thickness of the transparent electrode is characterized in that 10nm or more and 300nm or less.
A light emitting diode according to an aspect of the present invention, further comprising a protective film formed between the recessed portion and the phosphor formed in the n-type nitride semiconductor layer.
In the light emitting diode according to an aspect of the present invention, the protective film is characterized in that it comprises at least one selected from the group consisting of SiO X , SiN X , MgO X , AlO X , GaO X.
In the light emitting diode according to the aspect of the present invention, the recessed portion is formed in a portion of the p-type nitride semiconductor layer through the n-type nitride semiconductor layer and the active layer.
In the light emitting diode according to the aspect of the present invention, the phosphor filled in the recessed portion of the uneven portion is two or more, and in the recessed region adjacent to the active layer, electron-hole energy lost by non-radiative recombination in the active layer is resonance energy It is characterized by being filled with a phosphor that can receive visible light through the transmission (FRET, FResonance Energy Transfer, fret) phenomenon to generate visible light.
According to another aspect of the present invention, a light emitting diode includes a substrate on which a pattern for scattering and reflecting incident light is formed, formed on the substrate, and having a step with the first region and the first region and exposed to the outside. An n-type nitride semiconductor layer including a second region, an active layer formed on the first region of the n-type nitride semiconductor layer, a p-type nitride semiconductor layer formed on the active layer, and formed on a second region of the n-type nitride semiconductor layer and an p-type electrode formed on the n-type electrode and the p-type nitride semiconductor layer, wherein the uneven portion penetrates through the p-type nitride semiconductor layer and the active layer and is formed in a partial region of the n-type nitride semiconductor layer. The main recess is characterized in that the phosphor is filled.
In the light emitting diode according to another aspect of the present invention, the light emitting diode further comprises a transparent electrode formed between the p-type nitride semiconductor layer and the p-type electrode.
In the light emitting diode according to another aspect of the present invention, the transparent electrode is characterized in that it comprises at least one selected from the group consisting of ITO X , ZnO X , CaO X , WO X , TiO X.
In the light emitting diode according to another aspect of the present invention, the thickness of the transparent electrode is characterized in that 10nm or more and 300nm or less.
In the light emitting diode according to another aspect of the present invention, it characterized in that it further comprises a protective film formed between the recessed portion and the phosphor.
In the light emitting diode according to another aspect of the invention, the protective film is characterized in that it comprises at least one selected from the group consisting of SiO X , SiN X , MgO X , AlO X , GaO X.
In the light emitting diode according to another aspect of the present invention, the phosphor filled in the recessed portion of the uneven portion is two or more, and in the recessed region adjacent to the active layer, electron-hole energy lost by non-radiative recombination in the active layer is resonance energy It is characterized by being filled with a phosphor that can receive visible light through the transmission (FRET, FResonance Energy Transfer, fret) phenomenon to generate visible light.
According to an aspect of the present invention, there is provided a light emitting diode manufacturing method in which a p-type electrode, a p-type nitride semiconductor layer, an active layer, and an n-type nitride semiconductor layer are formed on a conductive substrate. A second step of forming an uneven portion, a third step of filling a phosphor in the uneven portion of the uneven portion, a fourth step of forming a transparent electrode on the convex portion of the n-type nitride semiconductor layer and the phosphor and on the n-type nitride semiconductor layer and a fifth step of forming an n-type electrode.
delete
In the method of manufacturing a light emitting diode according to an aspect of the present invention, the recessed portion is formed in a portion of the p-type nitride semiconductor layer through the n-type nitride semiconductor layer and the active layer.
In the method of manufacturing a light emitting diode according to an aspect of the present invention, there are two or more kinds of phosphors filled in the recessed portions of the uneven portions, and electron-hole energy lost by non-radiative recombination in the active layer is provided in the recessed portions adjacent to the active layer. It is characterized by being filled with a phosphor that can receive visible light through the resonance energy transfer (FRET, FResonance Energy Transfer, fret) phenomenon to generate visible light.
According to another aspect of the present invention, there is provided a light emitting diode manufacturing method comprising: forming an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on a substrate on which a pattern for scattering and reflecting incident light is formed; a second step of exposing a portion of the n-type nitride semiconductor layer by mesa etching a portion of the p-type nitride semiconductor layer, the active layer and the n-type nitride semiconductor layer, and penetrating the n-type nitride semiconductor layer and the active layer A third step of forming an uneven portion up to a partial region of the type nitride semiconductor layer, a fourth step of filling the recessed portion of the uneven portion, a fifth step of forming a transparent electrode on the convex portion of the p-type nitride semiconductor layer and the phosphor; Forming a p-type electrode on the transparent electrode and forming an n-type electrode on an exposed region of the n-type nitride semiconductor layer; It is sex.
delete
In the method of manufacturing a light emitting diode according to another aspect of the present invention, there are two or more kinds of phosphors filled in the recesses of the recesses, and the region of the recesses adjacent to the active layer has electron-hole energy lost by non-radiative recombination in the active layer. It is characterized by being filled with a phosphor that can receive visible light through the resonance energy transfer (FRET, FResonance Energy Transfer, fret) phenomenon to generate visible light.
According to the present invention, it is possible to provide a light emitting diode having a new structure and a method of manufacturing the same, which can dramatically increase the coating area and fluorescence conversion efficiency of a phosphor.
More specifically, the present invention is a device technology made by inserting a phosphor into a pillar-type or hole-type light emitting diode fabricated using dry etching after forming a pattern using a photolithography and nanoimprint method capable of a large area process It is immediately applicable to the manufacturing process of light emitting diodes. In general, the light emitting diode has a low fluorescence efficiency because the phosphor is coated on the periphery of the chip after chip formation, and the phosphor coating area is narrow and is far from the MQW generated by the light. However, in the device structure used in the present invention, the phosphor is coated. Not only does it increase the area, it also dramatically increases the fluorescence conversion efficiency by inserting the phosphor near the MQW generated by the light, and is an energy-saving environment that can accelerate the advent of the solid-state lighting era using the white light source gallium nitride-based light emitting diode. Technology.
1 is a view showing a light emitting diode according to a first embodiment of the present invention.
2 and 3 are views showing a modification of the first embodiment of the present invention.
4 is a view showing a light emitting diode according to a second embodiment of the present invention.
5 is a view showing a modification of the second embodiment of the present invention.
6 to 14 illustrate a method of manufacturing a light emitting diode according to a first embodiment of the present invention.
15 to 20 illustrate a method of manufacturing a light emitting diode according to a second exemplary embodiment of the present invention.
Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
1 is a view showing a light emitting diode according to a first embodiment of the present invention, Figure 2 and Figure 3 is a view showing a modification of the first embodiment of the present invention.
1 to 3, the light emitting diode according to the first embodiment of the present invention is a
The p-
The p-type
The
The n-type
Uneven portions are formed in some regions of the n-type
As an example, the recessed portion may be formed to almost penetrate the n-type
As another example, as shown in FIGS. 2 and 3, the recessed portion may be formed in a portion of the p-type
The
On the other hand, the phosphor filled in the recessed portion may be two or more kinds.
In addition, as shown in FIGS. 2 and 3, when the recesses and protrusions are formed in some regions of the p-type
The
The thickness of the
The n-
Meanwhile, the first embodiment of the present invention may further include a
The
4 is a view showing a light emitting diode according to a second embodiment of the present invention, Figure 5 is a view showing a modification of a second embodiment of the present invention.
4 and 5, the light emitting diode according to the second embodiment of the present invention is a
The
The n-type
The first region is a region where the
The
The p-type
The
It is preferable that the thickness of the
The n-
The uneven portion, which is a feature of the second embodiment of the present invention, extends through the p-type
For example, as shown in FIG. 5, the
Meanwhile, the second embodiment of the present invention may further include a
The
6 to 14 illustrate a method of manufacturing a light emitting diode according to a first embodiment of the present invention.
6 to 14, a light emitting diode manufacturing method according to a first embodiment of the present invention includes a p-
First, referring to FIG. 6, in the first step, the p-
Next, referring to FIGS. 7 and 8, in the second step, after the dry etching protective film M is formed on the n-type
For example, the concave portion of the concave-convex portion may be formed to almost penetrate the n-type
Next, referring to FIGS. 9 and 10, in the third step, a process of filling the
First, a
Referring to FIG. 11, the n-
That is, referring to FIG. 12, in the fourth step, a process of forming the
For example, the
The thickness of the
Next, referring to FIG. 13, in the fifth step, a process of forming the n-
As shown in FIGS. 13 and 14, the recessed portion may be formed in a portion of the p-type
The
On the other hand, the phosphor filled in the recessed portion may be two or more kinds.
In addition, as shown in FIGS. 13 and 14, when the concave-convex portion is formed through the n-type
15 to 20 illustrate a method of manufacturing a light emitting diode according to a second exemplary embodiment of the present invention.
15 to 20, in the method of manufacturing a light emitting diode according to a second embodiment of the present invention, an n-type
First, referring to FIG. 15, in the first step, an n-type
Next, referring to FIG. 16, in the second step, a portion of the p-type
Next, referring to FIG. 17, in the third step, a process of forming the uneven portion through the p-type
Next, referring to FIG. 18, in the fourth step, after forming a protective film on the concave-convex portion, a process of filling the phosphor is performed.
The phosphor is filled in the recessed portion of the uneven portion. That is, by forming the uneven portion as described above, and filling the phosphor in the uneven portion of the uneven portion, the phosphor coating area can be greatly increased.
On the other hand, the phosphor filled in the recessed portion may be two or more kinds, and the recessed portion is formed in the region of the p-type
Next, referring to FIG. 19, in the fifth step, a process of forming the
Next, referring to FIG. 20, in the sixth step, the p-
As described in detail above, according to the present invention, there is an effect of providing a light emitting diode having a new structure and a method of manufacturing the same, which can dramatically increase the coating area and fluorescent conversion efficiency of the phosphor.
More specifically, the present invention is a device technology made by inserting a phosphor into a pillar-type or hole-type light emitting diode fabricated using dry etching after forming a pattern using a photolithography and nanoimprint method capable of a large area process It is immediately applicable to the manufacturing process of light emitting diodes. In general, the light emitting diode has a low fluorescence efficiency because the phosphor is coated on the periphery of the chip after chip formation, and the phosphor coating area is narrow and is far from the MQW generated by the light. Not only does it increase the area, it also dramatically increases the fluorescence conversion efficiency by inserting the phosphor near the MQW generated by the light, and is an energy-saving environment that can accelerate the advent of the solid-state lighting era using the white light source gallium nitride-based light emitting diode. Technology.
Although the preferred embodiments of the present invention have been disclosed for illustrative purposes, those skilled in the art will appreciate that various modifications, additions and substitutions are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims. In addition, it is obvious that any person skilled in the art may make various modifications and imitations without departing from the scope of the technical idea of the present invention.
100: conductive substrate
110, 270 p-type electrode
120, 121, 230: p-type nitride semiconductor layer
130, 131, 220: active layer
140, 141, and 210: n-type nitride semiconductor layer
150, 151, 240: protective shield
160, 161, 162, 250: phosphor
170 and 260: transparent electrode
180, 280: n-type electrode
200: substrate
M: dry etching protective film
Claims (20)
A p-type electrode formed on the conductive substrate;
A p-type nitride semiconductor layer formed on the p-type electrode;
An active layer formed on the p-type nitride semiconductor layer;
An n-type nitride semiconductor layer formed on the active layer; And
An n-type electrode formed on the n-type nitride semiconductor layer,
Uneven portions are formed in some regions of the n-type nitride semiconductor layer,
The n-type electrode is formed on the convex portion of the uneven portion formed in the n-type nitride semiconductor layer,
Phosphors are filled in recesses of the uneven portions formed in the n-type nitride semiconductor layer,
The recessed portion is formed in a portion of the p-type nitride semiconductor layer through the n-type nitride semiconductor layer and the active layer,
The phosphor filled in the recessed portion of the uneven portion is two or more kinds,
The recessed portion adjacent to the active layer is filled with a phosphor that is capable of generating visible light by receiving electron-hole energy lost by non-radiative recombination in the active layer through a resonance energy transfer (FRET) phenomenon. Light emitting diodes, characterized in that.
And a transparent electrode formed between the n-type nitride semiconductor layer and the n-type electrode.
The transparent electrode is light emitting diode, characterized in that it comprises at least one selected from the group consisting of ITO X , ZnO X , CaO X , WO X , TiO X.
The thickness of the transparent electrode, characterized in that 10nm or more and 300nm or less, the light emitting diode.
A light emitting diode further comprising a protective film formed between the recessed portion of the uneven portion formed in the n-type nitride semiconductor layer and the phosphor.
The passivation layer is characterized in that it comprises at least one selected from the group consisting of SiO X , SiN X , MgO X , AlO X , GaO X.
A substrate on which a pattern for scattering and reflecting incident light is formed;
An n-type nitride semiconductor layer formed on the substrate and having a first region and a second region having a step difference from the first region and exposed to the outside;
An active layer formed on the first region of the n-type nitride semiconductor layer;
A p-type nitride semiconductor layer formed on the active layer;
An n-type electrode formed on the second region of the n-type nitride semiconductor layer; And
A p-type electrode formed on the p-type nitride semiconductor layer,
An uneven portion is formed through a portion of the n-type nitride semiconductor layer through the p-type nitride semiconductor layer and the active layer,
The recessed portion of the uneven portion is filled with a phosphor,
The phosphor filled in the recessed portion of the uneven portion is two or more kinds,
The recessed portion adjacent to the active layer is filled with a phosphor that is capable of generating visible light by receiving electron-hole energy lost by non-radiative recombination in the active layer through a resonance energy transfer (FRET) phenomenon. Light emitting diodes, characterized in that.
And a transparent electrode formed between the p-type nitride semiconductor layer and the p-type electrode.
The transparent electrode is light emitting diode, characterized in that it comprises at least one selected from the group consisting of ITO X , ZnO X , CaO X , WO X , TiO X.
The thickness of the transparent electrode, characterized in that 10nm or more and 300nm or less, the light emitting diode.
A light emitting diode, characterized in that it further comprises a protective film formed between the recessed portion and the phosphor.
The passivation layer is characterized in that it comprises at least one selected from the group consisting of SiO X , SiN X , MgO X , AlO X , GaO X.
A first step of forming a p-type electrode, a p-type nitride semiconductor layer, an active layer, and an n-type nitride semiconductor layer on the conductive substrate;
Forming a concave-convex portion in a portion of the n-type nitride semiconductor layer;
A third step of filling the recesses in the recesses of the recesses;
A fourth step of forming a transparent electrode on the convex portion of the n-type nitride semiconductor layer and the phosphor; And
A fifth step of forming an n-type electrode on the n-type nitride semiconductor layer,
The recessed portion is formed in a portion of the p-type nitride semiconductor layer through the n-type nitride semiconductor layer and the active layer,
The phosphor filled in the recessed portion of the uneven portion is two or more kinds,
The recessed portion adjacent to the active layer is filled with a phosphor that is capable of generating visible light by receiving electron-hole energy lost by non-radiative recombination in the active layer through a resonance energy transfer (FRET) phenomenon. A method of manufacturing a light emitting diode, characterized in that.
A first step of forming an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer on a substrate on which a pattern for scattering and reflecting incident light is formed;
A second step of mesa-etching a portion of the p-type nitride semiconductor layer, the active layer and the n-type nitride semiconductor layer to expose a portion of the n-type nitride semiconductor layer;
Forming a concave-convex portion in the partial region of the n-type nitride semiconductor layer through the p-type nitride semiconductor layer and the active layer;
A fourth step of filling the recesses in the recessed portions;
A fifth step of forming a transparent electrode on the convex portion of the p-type nitride semiconductor layer and the phosphor; And
Forming a p-type electrode on the transparent electrode and forming an n-type electrode on an exposed region of the n-type nitride semiconductor layer,
The phosphor filled in the recessed portion of the uneven portion is two or more kinds,
The recessed portion adjacent to the active layer is filled with a phosphor that is capable of generating visible light by receiving electron-hole energy lost by non-radiative recombination in the active layer through a resonance energy transfer (FRET) phenomenon. A method of manufacturing a light emitting diode, characterized in that.
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KR1020100139624A KR101291153B1 (en) | 2010-12-30 | 2010-12-30 | Light emitting diode and manufacturing method thereof |
PCT/KR2011/008243 WO2012091275A1 (en) | 2010-12-30 | 2011-11-01 | Light-emitting diode and method for manufacturing same |
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KR1020100139624A KR101291153B1 (en) | 2010-12-30 | 2010-12-30 | Light emitting diode and manufacturing method thereof |
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US11935910B2 (en) | 2020-02-12 | 2024-03-19 | Samsung Electronics Co., Ltd. | Semiconductor light-emitting device with groove and method of manufacturing the same |
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KR102131599B1 (en) | 2013-12-16 | 2020-07-09 | 삼성디스플레이 주식회사 | Light emitting diode and manufacturing method thereof |
JP7056628B2 (en) * | 2019-06-28 | 2022-04-19 | セイコーエプソン株式会社 | Luminous device and projector |
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JP2003243726A (en) * | 2001-12-14 | 2003-08-29 | Nichia Chem Ind Ltd | Light emitting apparatus and manufacturing method therefor |
JP2009076896A (en) * | 2007-08-31 | 2009-04-09 | Panasonic Corp | Semiconductor light-emitting element |
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KR20090032211A (en) * | 2007-09-27 | 2009-04-01 | 삼성전기주식회사 | Vertically structured gan type led device |
KR20100021242A (en) * | 2008-08-14 | 2010-02-24 | 전북대학교산학협력단 | Light emitting device and method of manufacturing the same |
US8410511B2 (en) * | 2008-10-17 | 2013-04-02 | Goldeneye, Inc. | Methods for high temperature processing of epitaxial chips |
JP4586934B2 (en) * | 2010-03-17 | 2010-11-24 | パナソニック電工株式会社 | Semiconductor light emitting element and lighting device using the same |
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2010
- 2010-12-30 KR KR1020100139624A patent/KR101291153B1/en not_active IP Right Cessation
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- 2011-11-01 WO PCT/KR2011/008243 patent/WO2012091275A1/en active Application Filing
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JP2003243726A (en) * | 2001-12-14 | 2003-08-29 | Nichia Chem Ind Ltd | Light emitting apparatus and manufacturing method therefor |
JP2009076896A (en) * | 2007-08-31 | 2009-04-09 | Panasonic Corp | Semiconductor light-emitting element |
Cited By (3)
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US10636940B2 (en) | 2015-09-16 | 2020-04-28 | Samsung Electronics Co., Ltd. | Semiconductor light-emitting device |
US10892298B2 (en) | 2018-04-10 | 2021-01-12 | Samsung Electronics Co., Ltd. | Light emitting diode display device with separation film and partition aligning to each other |
US11935910B2 (en) | 2020-02-12 | 2024-03-19 | Samsung Electronics Co., Ltd. | Semiconductor light-emitting device with groove and method of manufacturing the same |
Also Published As
Publication number | Publication date |
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KR20120077600A (en) | 2012-07-10 |
WO2012091275A8 (en) | 2012-08-23 |
WO2012091275A1 (en) | 2012-07-05 |
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