JP7171568B2 - 半導体素子およびこれを含む表示装置 - Google Patents

半導体素子およびこれを含む表示装置 Download PDF

Info

Publication number
JP7171568B2
JP7171568B2 JP2019527891A JP2019527891A JP7171568B2 JP 7171568 B2 JP7171568 B2 JP 7171568B2 JP 2019527891 A JP2019527891 A JP 2019527891A JP 2019527891 A JP2019527891 A JP 2019527891A JP 7171568 B2 JP7171568 B2 JP 7171568B2
Authority
JP
Japan
Prior art keywords
layer
light emitting
wavelength conversion
layers
width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2019527891A
Other languages
English (en)
Japanese (ja)
Other versions
JP2019536292A5 (enExample
JP2019536292A (ja
Inventor
イ，ソンヨル
キム，チョンソン
ムン，ジヒョン
パク，ソヌ
チョ，ヒョンミン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020160157703A external-priority patent/KR102639100B1/ko
Priority claimed from KR1020160160753A external-priority patent/KR102739437B1/ko
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of JP2019536292A publication Critical patent/JP2019536292A/ja
Publication of JP2019536292A5 publication Critical patent/JP2019536292A5/ja
Application granted granted Critical
Publication of JP7171568B2 publication Critical patent/JP7171568B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
JP2019527891A 2016-11-24 2017-11-24 半導体素子およびこれを含む表示装置 Active JP7171568B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
KR10-2016-0157703 2016-11-24
KR1020160157703A KR102639100B1 (ko) 2016-11-24 2016-11-24 반도체 소자 및 이를 포함하는 표시 장치
KR10-2016-0160753 2016-11-29
KR1020160160753A KR102739437B1 (ko) 2016-11-29 2016-11-29 반도체 소자 및 이를 포함하는 표시 장치
PCT/KR2017/013560 WO2018097667A1 (ko) 2016-11-24 2017-11-24 반도체 소자 및 이를 포함하는 표시 장치

Publications (3)

Publication Number Publication Date
JP2019536292A JP2019536292A (ja) 2019-12-12
JP2019536292A5 JP2019536292A5 (enExample) 2020-01-30
JP7171568B2 true JP7171568B2 (ja) 2022-11-15

Family

ID=62196218

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019527891A Active JP7171568B2 (ja) 2016-11-24 2017-11-24 半導体素子およびこれを含む表示装置

Country Status (5)

Country Link
US (1) US10790330B2 (enExample)
EP (2) EP3547376B1 (enExample)
JP (1) JP7171568B2 (enExample)
CN (1) CN110024142B (enExample)
WO (1) WO2018097667A1 (enExample)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6824501B2 (ja) * 2017-02-08 2021-02-03 ウシオ電機株式会社 半導体発光素子
TWI707491B (zh) * 2019-12-04 2020-10-11 錼創顯示科技股份有限公司 微型發光二極體顯示面板
KR102523976B1 (ko) 2017-11-21 2023-04-20 삼성전자주식회사 디스플레이 장치
CN110071134B (zh) * 2018-01-23 2023-09-12 晶元光电股份有限公司 发光元件、其制造方法及显示模块
KR102551354B1 (ko) * 2018-04-20 2023-07-04 삼성전자 주식회사 반도체 발광 소자 및 그 제조 방법
US11985881B2 (en) * 2018-06-29 2024-05-14 Semiconductor Energy Laboratory Co., Ltd. Display panel, display device, input/output device, data processing device
KR102701627B1 (ko) * 2018-07-03 2024-09-02 삼성디스플레이 주식회사 표시 장치 및 이의 제조방법
TWI683445B (zh) * 2018-07-20 2020-01-21 英屬開曼群島商錼創科技股份有限公司 顯示面板
US11289463B2 (en) * 2018-07-20 2022-03-29 PlayNitride Inc. Display panel
KR102663635B1 (ko) 2018-09-19 2024-05-14 삼성디스플레이 주식회사 발광 장치 및 이를 구비하는 표시 장치
KR102671368B1 (ko) * 2018-12-12 2024-06-04 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조방법
TWI748924B (zh) * 2019-05-24 2021-12-01 晶元光電股份有限公司 封裝與顯示模組
CN110649181B (zh) * 2019-10-08 2022-04-26 京东方科技集团股份有限公司 显示基板、显示装置以及显示基板的制备方法
CN110752242B (zh) * 2019-10-31 2021-09-21 武汉天马微电子有限公司 一种显示面板及显示装置
US12463077B2 (en) 2019-10-31 2025-11-04 Lextar Electronics Corporation Method of manufacturing display device
TW202119652A (zh) * 2019-10-31 2021-05-16 隆達電子股份有限公司 顯示裝置及其製造方法
JP2021071645A (ja) * 2019-10-31 2021-05-06 シャープ福山セミコンダクター株式会社 表示デバイス、および表示デバイスの製造方法
JP7239451B2 (ja) * 2019-11-14 2023-03-14 アオイ電子株式会社 発光装置および発光装置の製造方法
CN211555890U (zh) * 2019-12-02 2020-09-22 深圳市绎立锐光科技开发有限公司 Led显示装置
US11476394B2 (en) * 2020-01-09 2022-10-18 Samsung Electronics Co., Ltd. Light emitting device and display apparatus
DE102020101470A1 (de) * 2020-01-22 2021-07-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Bauelement mit konverterschicht und verfahren zur herstellung eines bauelements
JP2021125616A (ja) * 2020-02-07 2021-08-30 ソニーセミコンダクタソリューションズ株式会社 表示装置
CN113707037A (zh) * 2020-05-22 2021-11-26 北京芯海视界三维科技有限公司 发光模组、显示模组、显示屏及显示器
CN113851502A (zh) * 2020-06-10 2021-12-28 华为机器有限公司 显示面板、显示装置及显示面板的制备方法
CN111863884A (zh) * 2020-07-01 2020-10-30 深圳市华星光电半导体显示技术有限公司 量子点彩膜基板及其制备方法、显示面板
KR102979770B1 (ko) 2020-08-07 2026-06-19 삼성디스플레이 주식회사 표시 장치
KR102912395B1 (ko) * 2020-09-29 2026-01-14 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
US12136610B2 (en) 2020-11-30 2024-11-05 Seoul Viosys Co., Ltd. Unit pixel and displaying apparatus including the unit pixel
KR102906395B1 (ko) * 2021-02-02 2026-01-05 삼성전자주식회사 디스플레이 모듈 및 그 제조 방법
US12532591B2 (en) * 2021-04-30 2026-01-20 Samsung Display Co., Ltd. Display device having partition wall structure that finely divides wavelength conversion portions
KR102973021B1 (ko) 2021-05-17 2026-06-05 삼성전자주식회사 디스플레이 모듈 및 이를 포함하는 전자 장치
US12095012B2 (en) * 2021-07-16 2024-09-17 Epistar Corporation Light-emitting device
KR102847517B1 (ko) * 2021-07-27 2025-08-19 삼성디스플레이 주식회사 표시 장치
EP4203030A1 (en) 2021-12-27 2023-06-28 LG Display Co., Ltd. Led-based display device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010010039A (ja) 2008-06-30 2010-01-14 Sharp Corp 画像表示装置
JP2011108588A (ja) 2009-11-20 2011-06-02 Koito Mfg Co Ltd 発光モジュールおよび車両用灯具
WO2013137052A1 (ja) 2012-03-16 2013-09-19 シャープ株式会社 蛍光体基板およびこれを備えた表示装置
JP2015156431A (ja) 2014-02-20 2015-08-27 スタンレー電気株式会社 半導体発光素子及び半導体発光装置
US20150362165A1 (en) 2014-06-14 2015-12-17 Hiphoton Co., Ltd. Light Engine Array

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3306130B2 (ja) * 1992-11-17 2002-07-24 三洋電機株式会社 発光ダイオードアレイ装置
JPH11251059A (ja) * 1998-02-27 1999-09-17 Sanyo Electric Co Ltd カラー表示装置
JP2008010298A (ja) 2006-06-29 2008-01-17 Idemitsu Kosan Co Ltd 色変換基板及びカラー表示装置
EP2460191A2 (en) 2009-07-30 2012-06-06 3M Innovative Properties Company Pixelated led
TW201216512A (en) * 2010-10-12 2012-04-16 Ubilux Optoelectronics Corp LED capable of laterally emitting light
KR20130007037A (ko) 2011-06-28 2013-01-18 (주)세미머티리얼즈 발광소자 패키지 및 그 제조 방법
JP2014199267A (ja) * 2011-08-05 2014-10-23 シャープ株式会社 蛍光体基板、表示装置および電子機器
KR101422037B1 (ko) * 2012-09-04 2014-07-23 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치
KR101948207B1 (ko) 2012-09-24 2019-04-26 삼성디스플레이 주식회사 백색 발광 소자, 이를 포함하는 백색 발광 패널, 백색 발광 패널의 제조 방법, 및 백색 발광 소자를 포함하는 표시 장치
JP2015056650A (ja) 2013-09-13 2015-03-23 株式会社東芝 発光装置
US9711552B2 (en) 2014-08-19 2017-07-18 Heptagon Micro Optics Pte. Ltd. Optoelectronic modules having a silicon substrate, and fabrication methods for such modules
GB201420452D0 (en) 2014-11-18 2014-12-31 Mled Ltd Integrated colour led micro-display
KR101688163B1 (ko) * 2015-03-30 2016-12-20 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법
WO2016171207A1 (ja) * 2015-04-24 2016-10-27 シャープ株式会社 波長変換基板、発光装置並びにこれを備えた表示装置、照明装置および電子機器
WO2017209437A1 (en) * 2016-05-31 2017-12-07 Lg Electronics Inc. Display device using semiconductor light emitting device and fabrication method thereof
EP3518626B1 (en) * 2016-09-22 2022-03-16 LG Electronics Inc. Display apparatus using semiconductor light emitting device and manufacturing method therefor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010010039A (ja) 2008-06-30 2010-01-14 Sharp Corp 画像表示装置
JP2011108588A (ja) 2009-11-20 2011-06-02 Koito Mfg Co Ltd 発光モジュールおよび車両用灯具
WO2013137052A1 (ja) 2012-03-16 2013-09-19 シャープ株式会社 蛍光体基板およびこれを備えた表示装置
JP2015156431A (ja) 2014-02-20 2015-08-27 スタンレー電気株式会社 半導体発光素子及び半導体発光装置
US20150362165A1 (en) 2014-06-14 2015-12-17 Hiphoton Co., Ltd. Light Engine Array

Also Published As

Publication number Publication date
EP4224526A1 (en) 2023-08-09
US20190378873A1 (en) 2019-12-12
US10790330B2 (en) 2020-09-29
CN110024142B (zh) 2023-02-17
JP2019536292A (ja) 2019-12-12
EP3547376B1 (en) 2023-05-17
EP3547376A4 (en) 2020-07-01
CN110024142A (zh) 2019-07-16
WO2018097667A1 (ko) 2018-05-31
EP3547376A1 (en) 2019-10-02

Similar Documents

Publication Publication Date Title
US10790330B2 (en) Semiconductor device and display device comprising same
US10615311B2 (en) Light emitting device and display comprising same
KR102573587B1 (ko) 반도체 소자 및 이를 포함하는 표시 장치
KR102462658B1 (ko) 발광소자 및 이를 포함하는 표시장치
CN102315346B (zh) 发光器件及其制造方法
KR20170142022A (ko) 표시 장치 및 이의 제조 방법
KR102639100B1 (ko) 반도체 소자 및 이를 포함하는 표시 장치
KR102739437B1 (ko) 반도체 소자 및 이를 포함하는 표시 장치
KR102496616B1 (ko) 발광소자 및 이를 포함하는 표시장치
US10734550B2 (en) Semiconductor device
CN102315349B (zh) 发光器件及其制造方法
KR20170139355A (ko) 발광소자 및 이를 포함하는 표시장치
US11450788B2 (en) Semiconductor device
KR102643042B1 (ko) 마이크로 발광 소자
KR102528386B1 (ko) 반도체 소자
US20160072004A1 (en) Semiconductor light emitting device
KR20170120962A (ko) 발광소자 및 이를 포함하는 표시장치
KR20170043312A (ko) 발광소자 패키지
KR102367758B1 (ko) 반도체 소자
KR20170124281A (ko) 발광소자 패키지
KR102507444B1 (ko) 발광소자 및 이를 포함하는 디스플레이 장치
KR102688877B1 (ko) 발광 소자 패키지
KR20190119852A (ko) 반도체 소자
KR102415244B1 (ko) 반도체 소자
KR20170082900A (ko) 발광 소자 패키지

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190527

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20201116

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20211119

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20211130

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220225

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20220517

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220817

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20221004

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20221102

R150 Certificate of patent or registration of utility model

Ref document number: 7171568

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250