CN109719374B - 被加工物的加工方法 - Google Patents

被加工物的加工方法 Download PDF

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Publication number
CN109719374B
CN109719374B CN201811251709.3A CN201811251709A CN109719374B CN 109719374 B CN109719374 B CN 109719374B CN 201811251709 A CN201811251709 A CN 201811251709A CN 109719374 B CN109719374 B CN 109719374B
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CN
China
Prior art keywords
laser
processing
workpiece
forming step
groove forming
Prior art date
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Active
Application number
CN201811251709.3A
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English (en)
Chinese (zh)
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CN109719374A (zh
Inventor
熊泽哲
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Disco Corp
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Disco Corp
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Filing date
Publication date
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Publication of CN109719374A publication Critical patent/CN109719374A/zh
Application granted granted Critical
Publication of CN109719374B publication Critical patent/CN109719374B/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02076—Cleaning after the substrates have been singulated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02098—Cleaning only involving lasers, e.g. laser ablation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Drying Of Semiconductors (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
CN201811251709.3A 2017-10-31 2018-10-25 被加工物的加工方法 Active CN109719374B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017211049A JP7005281B2 (ja) 2017-10-31 2017-10-31 被加工物の加工方法
JP2017-211049 2017-10-31

Publications (2)

Publication Number Publication Date
CN109719374A CN109719374A (zh) 2019-05-07
CN109719374B true CN109719374B (zh) 2022-11-04

Family

ID=66295053

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201811251709.3A Active CN109719374B (zh) 2017-10-31 2018-10-25 被加工物的加工方法

Country Status (4)

Country Link
JP (1) JP7005281B2 (ja)
KR (1) KR102644401B1 (ja)
CN (1) CN109719374B (ja)
TW (1) TWI775973B (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110892521B (zh) 2019-10-12 2021-01-29 长江存储科技有限责任公司 用于裸片对裸片进行键合的方法和结构
JP7486379B2 (ja) 2020-08-13 2024-05-17 株式会社ディスコ レーザー加工方法およびチップの製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101345201A (zh) * 2007-07-13 2009-01-14 株式会社迪思科 晶片的加工方法
JP2013021211A (ja) * 2011-07-13 2013-01-31 Disco Abrasive Syst Ltd ウエーハの加工方法
KR20140045878A (ko) * 2012-09-26 2014-04-17 가부시기가이샤 디스코 레이저 가공 장치 및 보호막 피복 방법
CN104690429A (zh) * 2013-12-05 2015-06-10 株式会社迪思科 光器件晶片的加工方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003320466A (ja) 2002-05-07 2003-11-11 Disco Abrasive Syst Ltd レーザビームを使用した加工機
JP2006261447A (ja) * 2005-03-17 2006-09-28 Toshiba Corp 半導体装置、及び、半導体装置の製造方法
JP4648056B2 (ja) * 2005-03-31 2011-03-09 株式会社ディスコ ウエーハのレーザー加工方法およびレーザー加工装置
JP2011108708A (ja) * 2009-11-13 2011-06-02 Disco Abrasive Syst Ltd ウエーハの加工方法
KR101243877B1 (ko) * 2011-06-03 2013-03-20 주성엔지니어링(주) 태양전지 및 태양전지의 제조 방법
JP5840875B2 (ja) * 2011-06-21 2016-01-06 株式会社ディスコ 光デバイスウエーハの加工方法
US8652940B2 (en) * 2012-04-10 2014-02-18 Applied Materials, Inc. Wafer dicing used hybrid multi-step laser scribing process with plasma etch
US9048309B2 (en) * 2012-07-10 2015-06-02 Applied Materials, Inc. Uniform masking for wafer dicing using laser and plasma etch
JP6162018B2 (ja) * 2013-10-15 2017-07-12 株式会社ディスコ ウエーハの加工方法
JP2015220240A (ja) * 2014-05-14 2015-12-07 株式会社ディスコ ウェーハの加工方法
JP2016157892A (ja) * 2015-02-26 2016-09-01 株式会社ディスコ ウエーハの加工方法
JP2016162809A (ja) * 2015-02-27 2016-09-05 株式会社ディスコ ウエーハの加工方法
US9601375B2 (en) * 2015-04-27 2017-03-21 Applied Materials, Inc. UV-cure pre-treatment of carrier film for wafer dicing using hybrid laser scribing and plasma etch approach
JP6524558B2 (ja) * 2016-12-15 2019-06-05 パナソニックＩｐマネジメント株式会社 素子チップの製造方法
JP6949421B2 (ja) * 2017-05-09 2021-10-13 株式会社ディスコ 加工方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101345201A (zh) * 2007-07-13 2009-01-14 株式会社迪思科 晶片的加工方法
JP2013021211A (ja) * 2011-07-13 2013-01-31 Disco Abrasive Syst Ltd ウエーハの加工方法
KR20140045878A (ko) * 2012-09-26 2014-04-17 가부시기가이샤 디스코 레이저 가공 장치 및 보호막 피복 방법
CN104690429A (zh) * 2013-12-05 2015-06-10 株式会社迪思科 光器件晶片的加工方法

Also Published As

Publication number Publication date
JP2019081194A (ja) 2019-05-30
KR20190049468A (ko) 2019-05-09
CN109719374A (zh) 2019-05-07
JP7005281B2 (ja) 2022-01-21
TWI775973B (zh) 2022-09-01
KR102644401B1 (ko) 2024-03-06
TW201919122A (zh) 2019-05-16

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