CN109671721A - 显示装置及其制造方法 - Google Patents

显示装置及其制造方法 Download PDF

Info

Publication number
CN109671721A
CN109671721A CN201811502179.5A CN201811502179A CN109671721A CN 109671721 A CN109671721 A CN 109671721A CN 201811502179 A CN201811502179 A CN 201811502179A CN 109671721 A CN109671721 A CN 109671721A
Authority
CN
China
Prior art keywords
layer
display device
film transistor
tft
buffer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201811502179.5A
Other languages
English (en)
Inventor
张伟彬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Original Assignee
Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd filed Critical Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority to CN201811502179.5A priority Critical patent/CN109671721A/zh
Priority to US16/499,274 priority patent/US20200258974A1/en
Priority to PCT/CN2019/075655 priority patent/WO2020118900A1/zh
Publication of CN109671721A publication Critical patent/CN109671721A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L2021/775—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate comprising a plurality of TFTs on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/4985—Flexible insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5387—Flexible insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1229—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with different crystal properties within a device or between different devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1233—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with different thicknesses of the active layer in different devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1237—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a different composition, shape, layout or thickness of the gate insulator in different devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1251—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

本发明公开一种显示装置及其制造方法。所述显示装置包含：一弯折区及一非弯折区，所述非弯折区具有一有源区域；及一第一薄膜晶体管层及一第二薄膜晶体管层，设置于所述有源区域内，其中所述第二薄膜晶体管层设置于所述第一薄膜晶体管层上。本发明通过将原本设计在非显示区的外围电路设置到有源区域的薄膜晶体管层下方，以达到避免外围电路占用屏幕的非有源区域,从而提升显示装置的屏占比。

Description

显示装置及其制造方法
技术领域
本发明是有关于一种显示装置及其制造方法，特别是有关于一种提升屏占比的显示装置及其制造方法。
背景技术
近年来，随着显示装置越来越普遍的使用，显示装置走向高屏占比的发展，窄边框已经成为显示装置发展的一种趋势。对于柔性显示装置而言，目前结构普遍通过将一些外围电路结构(例如，多个薄膜晶体管结构)设置在显示装置周围的非有源区域。但是，所述外围电路结构的设置将导致显示装置的屏占比无法提高。再者，目前柔性显示装置通常是采用设置于显示面板下方的柔性基板的可弯折特性，将所述柔性基板沿着弯折区弯折到显示面板的背面，以提高显示装置的屏占比。但是由于所述柔性显示装置的弯折区也会设置一些电路结构(例如，多个薄膜晶体管结构)，其也是造成屏占比无法提高的因素之一。另外，弯折区会设置无机层以阻隔水氧渗透进入造成显示装置的显示元件及材料的劣化或失效。但所述无机层在经过多次弯折后易发生断裂或因显示元件的材料劣化造成电阻变大。另外，所述多个薄膜晶体管结构在弯折区也会极易受损。
故，有必要提供一种显示装置及其制造方法，以解决现有技术所存在的问题。
发明内容
有鉴于此，本发明提供一种显示装置及其制造方法，以解决现有技术中显示装置外围的非有源区域及显示装置下方的弯折区往往会设置多个电路结构造成屏占比无法提高的问题，以及解决现有技术中弯折区的无机层在经过多次弯折后易发生断裂或因显示元件的材料劣化造成电阻变大或薄膜晶体管结构极易受损的问题。
本发明的主要目的在于提供一种显示装置及其制造方法，其可以提高显示装置的屏占比。
本发明的次要目的在于提供一种显示装置及其制造方法，其可以通过将设置在显示装置外围的非有源区域及显示装置下方的弯折区的多个电路结构设置在有源区域，以提高显示装置的屏占比。
本发明的另一目的在于提供一种显示装置及其制造方法，其可以避免显示装置的弯折区的无机层在经过多次弯折后易发生断裂或因显示元件的材料劣化造成电阻变大及薄膜晶体管结构在弯折区极易受损造成产品失效。
为达成本发明的前述目的，本发明一实施例提供一种显示装置，包含：一弯折区及一非弯折区，所述非弯折区具有一有源区域；及一第一薄膜晶体管层及一第二薄膜晶体管层，设置于所述有源区域内，其中所述第二薄膜晶体管层设置于所述第一薄膜晶体管层上。
在本发明的一实施例中，所述第一薄膜晶体管层包含一扫描线电路及一发光控制线(EM)电路。
在本发明的一实施例中，所述第二薄膜晶体管层为一内部补偿型电路。
在本发明的一实施例中，所述第二薄膜晶体管层为一个7T1C电路。
在本发明的一实施例中，所述显示装置更包含：一基板；一第一缓冲层，设置于所述基板上，所述第一薄膜晶体管层设置于所述第一缓冲层上；一第二缓冲层，设置于所述第一薄膜晶体管层上，所述第二薄膜晶体管层设置于所述第二缓冲层上；及一平坦化层，设置于所述第二薄膜晶体管层上。
在本发明的一实施例中，所述弯折区具有一深孔贯穿所述第一薄膜晶体管层、所述第二缓冲层及所述第二薄膜晶体管层，其中所述平坦化层填入所述深孔中。
在本发明的一实施例中，所述显示装置更包含：一过孔，贯穿所述第二缓冲层、所述第二薄膜晶体管层及所述平坦化层；及一阳极金属层，设置于所述平坦化层上，其中所述第一薄膜晶体管层通过所述过孔与所述阳极金属层相连接。
在本发明的一实施例中，所述第一薄膜晶体管层及所述第二薄膜晶体管层成交错方式设置。
再者，本发明另一实施例另提供一种一种显示装置的制造方法，包含步骤：提供一基板；形成一第一缓冲层于所述基板上；形成一第一薄膜晶体管层于所述第一缓冲层上；形成一第二缓冲层于所述第一薄膜晶体管层上；形成一第二薄膜晶体管层于所述第二缓冲层上；形成一深孔于所述第二薄膜晶体管层的至少两个薄膜晶体管之间，并贯穿所述第一薄膜晶体管层、所述第二缓冲层及所述第二薄膜晶体管层；及设置一平坦化层于所述第二薄膜晶体管层上并填入所述深孔中。
在本发明的一实施例中，所述第一薄膜晶体管层包含一扫描线电路及一发光控制线(EM)电路；及所述第二薄膜晶体管层为一内部补偿型电路。
与现有技术相比较，本发明的显示装置及其制造方法，可以通过将设置在显示装置外围的非有源区域及显示装置下方的弯折区的多个电路结构设置在有源区域，这样可以提高显示装置的屏占比。再者，本发明的显示装置及其制造方法，可以通过将深孔设置在显示装置的弯折区并贯穿显示装置的弯折区的无机层，如此可以解决现有技术中显示装置的弯折区的无机层在经过多次弯折后易发生断裂或因显示元件的材料劣化造成电阻变大或薄膜晶体管结构极易受损的问题。
为让本发明的上述内容能更明显易懂，下文特举优选实施例，并配合所附图式，作详细说明如下：
附图说明
图1是本发明实施例的显示装置的剖面示意图。
具体实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。再者，本发明所提到的方向用语，例如上、下、顶、底、前、后、左、右、内、外、侧面、周围、中央、水平、横向、垂直、纵向、轴向、径向、最上层或最下层等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。
请参照图1所示，本发明实施例为达成本发明的前述目的，提供一种显示装置1。所述显示装置1包含：一第一薄膜晶体管层及一第二薄膜晶体管层，所述第二薄膜晶体管层设置于所述第一薄膜晶体管层上。优选地，所述第一薄膜晶体管层包含一扫描线电路及一发光控制线(EM)电路。所述第二薄膜晶体管层为一内部补偿型电路。优选地，所述第二薄膜晶体管层为一内部补偿型电路。可选地，所述第一薄膜晶体管层为一个10T3C电路或8T2C电路，其中10T3C电路是由10个TFT和3个存储电容组成，8T2C电路是由8个TFT和2个存储电容组成。可选地，所述第二薄膜晶体管层为一个7T1C电路，其中7T1C电路是由7个TFT和1个存储电容组成。可选地，所述第一薄膜晶体管层具有至少两组薄膜晶体管，其中一第一组的薄膜晶体管设置为依次打开所述第一薄膜晶体管层中扫描栅极的讯号，完成像素的复位与数据写入，以决定发光的灰阶，其中一第二组的薄膜晶体管设置为依次打开所述第一薄膜晶体管层中所述发光控制线的栅极讯号，以控制一整行像素发光与否。
本发明将于下文利用图1逐一详细说明本发明实施例上述各元件的细部构造、组装关系及其运作原理。所述显示装置1包含：一弯折区BA及一非弯折区，所述非弯折区具有一有源区域AA。一第一薄膜晶体管层及一第二薄膜晶体管层，设置于所述有源区域AA内，其中所述第二薄膜晶体管层设置于所述第一薄膜晶体管层上。另外地，所述显示装置1更包含：一基板102、一第一缓冲层103、一第一薄膜晶体管层、一第二缓冲层106、一第二薄膜晶体管层及一平坦化层109。所述基板102可以为一柔性基板，例如，一聚酰亚胺基板。可选地，所述基板102的下方可设置有一载板101，例如，一玻璃基板。所述第一缓冲层103，设置于所述基板102上。所述第一薄膜晶体管层设置于所述第一缓冲层103上。可选地，所述第一薄膜晶体管层包含：一第一有源层111、一第一栅极绝缘层104、一第一栅极113、一第二栅极绝缘层105、一第一源极/漏极114、一第一源极/漏极过孔115。所述第一有源层111，设置于所述第一缓冲层103上，且所述第一有源层111具有一第一有源层参杂区112。所述第一栅极绝缘层104，设置于所述第一有源层111上并覆盖所述第一有源层111。所述第一栅极113，设置于所述第一栅极绝缘层104。所述第二栅极绝缘层105，设置于所述第一栅极113上并覆盖所述第一栅极113。所述第一源极/漏极114，设置于所述第二栅极绝缘层105上，并通过所述第一源极/漏极过孔115连接所述第一有源层111。所述第二缓冲层106，设置于所述第一薄膜晶体管层上。所述第二薄膜晶体管层设置于所述第二缓冲层106上。可选地，所述第二薄膜晶体管层包含：一第二有源层116、一第三栅极绝缘层107、一第二栅极1117、一第四栅极绝缘层108、一第二源极/漏极118及一第二源极/漏极过孔119。所述第二有源层116，设置于所述第二缓冲层106上。所述第三栅极绝缘层107，设置于所述第二有源层116上并覆盖所述第二有源层116。所述第二栅极117，设置于所述第三栅极绝缘层107。所述第四栅极绝缘层108，设置于所述第二栅极117上并覆盖所述第二栅极117。所述第二源极/漏极118，设置于所述第四栅极绝缘层108上，并通过所述第二源极/漏极过孔119连接所述第二有源层116。所述平坦化层109，设置于所述第二薄膜晶体管层上。可选地，所述平坦化层109设置于所述第四栅极绝缘层108上。优选地，所述弯折区BA具有一深孔120贯穿所述第一薄膜晶体管层、所述第二缓冲层106及所述第二薄膜晶体管层，其中所述平坦化层109填入所述深孔120中。可选地，所述深孔120还贯穿所述第一栅极绝缘层104、所述第二栅极绝缘层105、所述第三栅极绝缘层107及所述第四栅极绝缘层108。可选地，所述深孔120的一底部与所述第一栅极绝缘层104的一底表面齐平。换句话说，所述深孔120仅开孔到第一栅极绝缘层104并暴露出所述第一缓冲层103的一上表面。可选地，所述显示装置1还包含：一第一过孔121、一第二过孔122及一阳极金属层123。所述第一过孔121贯穿所述第二缓冲层106、所述第二薄膜晶体管层及所述平坦化层109。所述阳极金属层123，设置于所述平坦化层109上，其中所述第一薄膜晶体管层通过所述第一过孔121与所述阳极金属层123中的一第一阳极123A相连接。可选地，所述第一过孔121还贯穿所述第三栅极绝缘层107及所述第四栅极绝缘层108。所述第二过孔122贯穿所述平坦化层109，其中所述第二薄膜晶体管层通过所述第二过孔122与所述阳极金属层123中的一第二阳极123B相连接。优选地，所述显示装置1还包含：一像素界定层110及一光阻间隔物层124。所述像素界定层110设置于所述平坦化层109上。所述像素界定层110具有多个开口125，暴露出所述阳极金属层123。所述光阻间隔物层124设置于所述像素界定层110上，并相对于所述多个开口125设置。可选地，所述第二薄膜晶体管层设置于所述第一薄膜晶体管层的郑尚方。替代地，所述第一薄膜晶体管层及所述第二薄膜晶体管层以交错方式设置。可选地，所述第二缓冲层106的一厚度比所述第一缓冲层103的一厚度较厚，以避免所述第一薄膜晶体管层及所述第二薄膜晶体管层的相互干涉。可选地，所述第二缓冲层106可进一步设置另一有机层，以改善所述第一薄膜晶体管层及所述第二薄膜晶体管层的相互干涉。可选地，所述显示装置1具有两个有源区域AA设置于所述弯折区的两侧。所述两个有源区域AA中的一个具有如上所述的第一薄膜晶体管层及第二薄膜晶体管层的结构，而所述两个有源区域AA中的另一个仅设置有所述第二薄膜晶体管层。可选地，所述载板101可以在所述显示装置1制造完成后移除或保留。
再者，本发明的另一实施例提供一种显示装置1的制造方法包含步骤：提供一基板102；形成一第一缓冲层103于所述基板上；形成一第一薄膜晶体管层于所述第一缓冲层103上；形成一第二缓冲层106于所述第一薄膜晶体管层上；形成一第二薄膜晶体管层于所述第二缓冲层106上；形成一深孔120于所述第二薄膜晶体管层的至少两个薄膜晶体管之间，并贯穿所述第一薄膜晶体管层、所述第二缓冲层106及所述第二薄膜晶体管层；及设置一平坦化层109于所述第二薄膜晶体管层上并填入所述深孔120中。所述制造方法中形成所述第一薄膜晶体管层的步骤还包含步骤：形成一第一有源层111于所述第一缓冲层103上；形成一第一有源层参杂区112于所述第一有源层111；形成一第一栅极绝缘层104于所述第一有源层111上并覆盖所述第一有源层111；形成一第一栅极113于所述第一栅极绝缘层104上；形成一第二栅极绝缘层10于所述第一栅极113上并覆盖所述第一栅极113；形成第一源极/漏极114于所述第二栅极绝缘层105上；及形成一第一源极/漏极过孔115连接所述第一有源层111。所述制造方法中形成所述第二薄膜晶体管层的步骤还包含步骤：形成一第二有源层116于所述第二缓冲层106上；形成一第三栅极绝缘层107于所述第二有源层116上并覆盖所述第二有源层116；形成一第二栅极117于所述第三栅极绝缘层107上；形成一第四栅极绝缘层108于所述第二栅极117上并覆盖所述第二栅极117；及形成一第二源极/漏极118于所述第四栅极绝缘层108上，并通过一第二源极/漏极过孔119连接所述第二有源层116。可选地，所述深孔120设置于所述显示装置1的一弯折区BA处。所述深孔120贯穿所述第一薄膜晶体管层、所述第二缓冲层106及所述第二薄膜晶体管层，其中所述平坦化层109填入所述深孔120中。可选地，所述深孔120还贯穿所述第一栅极绝缘层104、所述第二栅极绝缘层105、所述第三栅极绝缘层107及所述第四栅极绝缘层108。可选地，所述制造方法还包含步骤：形成一阳极金属层123于所述平坦化层109上，其中所述第一薄膜晶体管层通过一第一过孔121与所述阳极金属层123中的一第一阳极123A相连接。可选地，所述第一过孔121还贯穿所述第三栅极绝缘层107及所述第四栅极绝缘层108。所述制造方法还包含步骤：形成一第二过孔122贯穿所述平坦化层109，其中所述第二薄膜晶体管层通过所述第二过孔122与所述阳极金属层123中的一第二阳极123B相连接。优选地，所述制造方法还包含步骤：形成一像素界定层110于所述平坦化层109上，所述像素界定层110具有多个开口125，暴露出所述阳极金属层123；及形成一光阻间隔物层124于所述像素界定层110上，并相对于所述多个开口125设置。
如上所述，相较于现有显示装置有源区域周围的非有源区域及显示装置下方的弯折区往往会设置多个电路结构造成屏占比无法提高的问题，以及解决现有技术中弯折区的无机层在经过多次弯折后易发生断裂或因显示元件的材料劣化造成电阻变大或薄膜晶体管结构极易受损的问题。本发明的显示装置及其制造方法通过将设置显示装置外围的非有源区域及显示装置下方的弯折区的多个电路结构设置在有源区域，以提高显示装置的屏占比。再者，本发明的显示装置及其制造方法，可以通过将深孔设置在显示装置的弯折区并贯穿显示装置的弯折区的无机层，如此可以解决现有技术中显示装置的弯折区的无机层在经过多次弯折后易发生断裂或因显示元件的材料劣化造成电阻变大或薄膜晶体管结构极易受损的问题。
本发明已由上述相关实施例加以描述，然而上述实施例仅为实施本发明的范例。必需指出的是，已公开的实施例并未限制本发明的范围。相反地，包含于权利要求书的精神及范围的修改及均等设置均包括于本发明的范围内。

Claims (10)

1.一种显示装置，其特征在于：所述显示装置包含：
一弯折区及一非弯折区，所述非弯折区具有一有源区域；及
一第一薄膜晶体管层及一第二薄膜晶体管层，设置于所述有源区域内，其中所述第二薄膜晶体管层设置于所述第一薄膜晶体管层上。
2.如权利要求1所述的显示装置，其特征在于：所述第一薄膜晶体管层包含一扫描线电路及一发光控制线(EM)电路。
3.如权利要求1所述的显示装置，其特征在于：所述第二薄膜晶体管层为一内部补偿型电路。
4.如权利要求3所述的显示装置，其特征在于：所述第二薄膜晶体管层为一个7T1C电路。
5.如权利要求1所述的显示装置，其特征在于：所述显示装置更包含：
一基板；
一第一缓冲层，设置于所述基板上，所述第一薄膜晶体管层设置于所述第一缓冲层上；
一第二缓冲层，设置于所述第一薄膜晶体管层上，所述第二薄膜晶体管层设置于所述第二缓冲层上；及
一平坦化层，设置于所述第二薄膜晶体管层上。
6.如权利要求5所述的显示装置，其特征在于：所述弯折区具有一深孔贯穿所述第一薄膜晶体管层、所述第二缓冲层及所述第二薄膜晶体管层，其中所述平坦化层填入所述深孔中。
7.如权利要求5所述的显示装置，其特征在于：所述显示装置更包含：
一过孔，贯穿所述第二缓冲层、所述第二薄膜晶体管层及所述平坦化层；及
一阳极金属层，设置于所述平坦化层上，
其中所述第一薄膜晶体管层通过所述过孔与所述阳极金属层相连接。
8.如权利要求1所述的显示装置，其特征在于：所述第一薄膜晶体管层及所述第二薄膜晶体管层成交错方式设置。
9.一种显示装置的制造方法，其特征在于：所述制造方法包含步骤：
提供一基板；
形成一第一缓冲层于所述基板上；
形成一第一薄膜晶体管层于所述第一缓冲层上；
形成一第二缓冲层于所述第一薄膜晶体管层上；
形成一第二薄膜晶体管层于所述第二缓冲层上；
形成一深孔于所述第二薄膜晶体管层的至少两个薄膜晶体管之间，并贯穿所述第一薄膜晶体管层、所述第二缓冲层及所述第二薄膜晶体管层；及
设置一平坦化层于所述第二薄膜晶体管层上并填入所述深孔中。
10.如权利要求9所述的显示装置的制造方法，其特征在于：所述第一薄膜晶体管层包含一扫描线电路及一发光控制线(EM)电路；及所述第二薄膜晶体管层为一内部补偿型电路。
CN201811502179.5A 2018-12-10 2018-12-10 显示装置及其制造方法 Pending CN109671721A (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201811502179.5A CN109671721A (zh) 2018-12-10 2018-12-10 显示装置及其制造方法
US16/499,274 US20200258974A1 (en) 2018-12-10 2019-02-21 Display device and manufactruing method thereof
PCT/CN2019/075655 WO2020118900A1 (zh) 2018-12-10 2019-02-21 显示装置及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201811502179.5A CN109671721A (zh) 2018-12-10 2018-12-10 显示装置及其制造方法

Publications (1)

Publication Number Publication Date
CN109671721A true CN109671721A (zh) 2019-04-23

Family

ID=66144255

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201811502179.5A Pending CN109671721A (zh) 2018-12-10 2018-12-10 显示装置及其制造方法

Country Status (3)

Country Link
US (1) US20200258974A1 (zh)
CN (1) CN109671721A (zh)
WO (1) WO2020118900A1 (zh)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110993680A (zh) * 2019-12-31 2020-04-10 厦门天马微电子有限公司 一种柔性显示面板和电子设备
CN111129027A (zh) * 2019-12-03 2020-05-08 武汉华星光电半导体显示技术有限公司 柔性显示器的结构及其制作方法
CN111403456A (zh) * 2020-03-27 2020-07-10 武汉华星光电半导体显示技术有限公司 像素结构及折叠显示面板
WO2021012567A1 (zh) * 2019-07-25 2021-01-28 武汉华星光电半导体显示技术有限公司 阵列基板和显示面板
TWI728822B (zh) * 2020-01-14 2021-05-21 友達光電股份有限公司 折疊顯示器
CN112909066A (zh) * 2021-02-05 2021-06-04 武汉华星光电半导体显示技术有限公司 显示面板、显示面板的制备方法及显示装置
US11374035B2 (en) 2019-07-25 2022-06-28 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Array substrate and display panel
US11495648B2 (en) 2020-03-27 2022-11-08 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Pixel structure and foldable display panel

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110911466B (zh) * 2019-11-29 2022-08-19 京东方科技集团股份有限公司 一种基板及其制备方法、母板的制备方法、掩膜版和蒸镀装置
KR20220063448A (ko) * 2020-11-10 2022-05-17 엘지디스플레이 주식회사 표시장치

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105390504A (zh) * 2014-08-29 2016-03-09 乐金显示有限公司 薄膜晶体管基板及使用它的显示装置
CN107403804A (zh) * 2016-05-17 2017-11-28 群创光电股份有限公司 显示设备
CN108288621A (zh) * 2018-03-09 2018-07-17 京东方科技集团股份有限公司 阵列基板的制造方法、阵列基板及显示面板
CN108428718A (zh) * 2017-02-13 2018-08-21 三星显示有限公司 半导体装置及其制造方法
CN108550612A (zh) * 2018-05-29 2018-09-18 武汉华星光电半导体显示技术有限公司 显示面板及其制作方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104752365A (zh) * 2013-12-27 2015-07-01 昆山国显光电有限公司 一种柔性显示器及其制备方法
KR102288350B1 (ko) * 2014-10-21 2021-08-11 삼성디스플레이 주식회사 유기발광 디스플레이 장치
CN107248521B (zh) * 2017-06-19 2020-01-31 深圳市华星光电半导体显示技术有限公司 Amoled背板结构
CN108538898A (zh) * 2018-04-28 2018-09-14 武汉华星光电半导体显示技术有限公司 柔性显示面板及其制作方法
CN108695370B (zh) * 2018-05-21 2021-10-22 京东方科技集团股份有限公司 Oled基板及制作方法、显示装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105390504A (zh) * 2014-08-29 2016-03-09 乐金显示有限公司 薄膜晶体管基板及使用它的显示装置
CN107403804A (zh) * 2016-05-17 2017-11-28 群创光电股份有限公司 显示设备
CN108428718A (zh) * 2017-02-13 2018-08-21 三星显示有限公司 半导体装置及其制造方法
CN108288621A (zh) * 2018-03-09 2018-07-17 京东方科技集团股份有限公司 阵列基板的制造方法、阵列基板及显示面板
CN108550612A (zh) * 2018-05-29 2018-09-18 武汉华星光电半导体显示技术有限公司 显示面板及其制作方法

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021012567A1 (zh) * 2019-07-25 2021-01-28 武汉华星光电半导体显示技术有限公司 阵列基板和显示面板
US11374035B2 (en) 2019-07-25 2022-06-28 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Array substrate and display panel
CN111129027A (zh) * 2019-12-03 2020-05-08 武汉华星光电半导体显示技术有限公司 柔性显示器的结构及其制作方法
CN110993680A (zh) * 2019-12-31 2020-04-10 厦门天马微电子有限公司 一种柔性显示面板和电子设备
TWI728822B (zh) * 2020-01-14 2021-05-21 友達光電股份有限公司 折疊顯示器
CN111403456A (zh) * 2020-03-27 2020-07-10 武汉华星光电半导体显示技术有限公司 像素结构及折叠显示面板
WO2021189537A1 (zh) * 2020-03-27 2021-09-30 武汉华星光电半导体显示技术有限公司 像素结构及折叠显示面板
US11495648B2 (en) 2020-03-27 2022-11-08 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Pixel structure and foldable display panel
CN112909066A (zh) * 2021-02-05 2021-06-04 武汉华星光电半导体显示技术有限公司 显示面板、显示面板的制备方法及显示装置
CN112909066B (zh) * 2021-02-05 2024-02-02 武汉华星光电半导体显示技术有限公司 显示面板、显示面板的制备方法及显示装置

Also Published As

Publication number Publication date
WO2020118900A1 (zh) 2020-06-18
US20200258974A1 (en) 2020-08-13

Similar Documents

Publication Publication Date Title
CN109671721A (zh) 显示装置及其制造方法
KR102640220B1 (ko) 박막 트랜지스터 기판 및 이를 이용한 표시장치
US10163944B2 (en) Thin film transistor substrate having a plurality of stacked storage capacitors
US11107870B2 (en) Thin film transistor substrate having two different types of thin film transistors on the same substrate and display using the same
US9529237B2 (en) Display device and driving method thereof
JP5351498B2 (ja) 液晶表示装置、及びその駆動方法
US7515217B2 (en) Fabricating method of a pixel structure having electrical field shielding layer and storage capacitor with three transparent electrodes
US7659961B2 (en) Thin film transistor substrate capable of enhancing image clarity and reducing residual images
CN108121124B (zh) Coa型阵列基板及显示面板
CN104216182B (zh) 阵列基板及其制造方法和显示面板
EP2383607A1 (en) Active matrix substrate, liquid crystal display panel and television receiver
US20120199854A1 (en) Active matrix substrate and organic el display device
CN1773354A (zh) 一种液晶显示器件及其制造方法
CN1767204A (zh) 晶体管和具有该晶体管的显示装置
CN1573491A (zh) 薄膜晶体管阵列板和包含该板的液晶显示器
CN1773357A (zh) 改善了与测试线的连接的薄膜晶体管阵列面板
US20100127267A1 (en) Alternative thin film transistors for liquid crystal displays
CN103941497A (zh) 一种薄膜晶体管阵列基板、制造方法以及液晶显示面板
US20100315583A1 (en) Pixel designs of improving the aperture ratio in an lcd
US20120257150A1 (en) Liquid crystal display panel
US20060012742A1 (en) Driving device for active matrix organic light emitting diode display and manufacturing method thereof
US20190267408A1 (en) Array substrate, manufacturing method thereof, and display panel
US20050030464A1 (en) LCD display of slim frame structure
KR102360788B1 (ko) 박막 트랜지스터 기판 및 이를 이용한 표시장치
JP2010091904A (ja) 液晶表示装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20190423

RJ01 Rejection of invention patent application after publication