CN109309012A - 导电性基板、电子装置以及显示装置的制造方法 - Google Patents

导电性基板、电子装置以及显示装置的制造方法 Download PDF

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Publication number
CN109309012A
CN109309012A CN201810838133.4A CN201810838133A CN109309012A CN 109309012 A CN109309012 A CN 109309012A CN 201810838133 A CN201810838133 A CN 201810838133A CN 109309012 A CN109309012 A CN 109309012A
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layer
groove
conductive pattern
pattern layer
substrate
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CN201810838133.4A
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CN109309012B (zh
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大德高志
谷口晋
关映子
佐藤淳
堀川雄平
折笠诚
阿部寿之
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TDK Corp
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TDK Corp
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
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    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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Abstract

本发明涉及导电性基板、电子装置以及显示装置的制造方法，导电性基板的制造方法是制造具有基材以及被设置于基材的一个主面侧的导电图形的导电性基板的方法。该方法具备由压印法来形成具有基底层露出的底面和包含沟槽形成层表面的侧面的沟槽的工序、从露出于沟槽底面的基底层使金属镀敷生长并由此而形成导电图形层的工序。

Description

导电性基板、电子装置以及显示装置的制造方法
技术领域
本发明涉及导电性基板、电子装置以及显示装置的制造方法。
背景技术
在触摸面板或者显示器的表面上会有安装搭载有具有透明性和导电性的导电性基板的透明天线的情况。近来，伴随于触摸面板以及显示器要大型化和多样化而变得对于导电性基板要求高透明性和高导电性并且还要求可挠性。现有的导电性基板例如在透明基材上具有由含有ITO、金属箔、或者导电性纳米线(nanowire)的树脂形成的形成有微细图形的导电图形层。
但是，ITO或者导电性纳米线都是一种昂贵的材料。另外，作为将微细的导电图形层形成于基材上的方法一般是蚀刻(腐蚀)法，由蚀刻来完成的方法其必要的工序分别为曝光工序、显影工序、蚀刻工序、以及剥离工序等，即工序繁多。根据如此理由，对于以低成本来制作导电性基板来说是有限度的。
作为以低成本来制作导电性基板的方法，在日本专利申请公开2016-164694号公报中所公开的方法是使沟槽(trench)形成于树脂制的透明基材上，由蒸镀法或者溅射法来使铜等导电性材料填充到透明基材整个面上，用蚀刻法除去沟槽内部以外的导电性材料从而形成导电层。另外，在日本专利国际公开第2014/153895号中所公开的方法是使沟槽形成于树脂制的透明基材上，并使导电性材料填充于沟槽内部。
发明内容
发明所要解决的技术问题
然而，具有填充沟槽的导电图形层的现有导电性基板在被重复弯曲的时候会有所谓发生导电层的剥离并且导电性降低的问题。
本发明的目的在于提供一种具有填充沟槽的导电图形层并且由弯曲引起的导电图形层剥离以及导电性降低被抑制的导电性基板的制造为可能的方法、以及制造使用了该导电性基板的电子装置及显示装置的方法。
解决技术问题的手段
本发明的一个侧面是提供制造具有基材以及被设置于基材的一个主面侧的导电图形层的导电性基板的方法。
制造第1实施方式所涉及的导电性基板的方法包括由包含将具有凸部的模具压入到在被形成于基材上的基底层上形成的沟槽形成层的处理的压印法(imprinting method)来形成具有基底层露出的底面和包含沟槽形成层表面的侧面的沟槽的工序、从露出于沟槽底面的基底层使金属镀敷生长并由此形成包含金属镀敷并且填充沟槽的导电图形层的工序。
制造第2实施方式所涉及的导电性基板的方法包括由包含将具有凸部的模具压入到在被形成于基材上的基底层上形成的沟槽形成层的处理的压印法来形成具有基底层露出的底面和包含沟槽形成层表面的侧面的沟槽的工序、使催化剂吸附于露出于沟槽底面的基底层的工序、从催化剂所吸附的基底层使金属镀敷生长并由此形成包含金属镀敷并填充沟槽的导电图形层的工序。
对于第1形态以及第2形态来说，优选以在导电图形层的侧面当中的至少一部分与所述沟槽的侧面之间形成间隙的形式使金属镀敷生长。
第1形态以及第2形态所涉及的方法也可以进一步具备使包含导电图形层的与沟槽的底面相反侧的面的表面中的至少一部分黑化的工序。
第1形态以及第2形态所涉及的方法也可以进一步具备形成覆盖沟槽形成层以及导电图形层的与基材相反侧的面中的至少一部分的保护膜的工序。
导电图形层也可以具有网目状图形。
本发明的另一个侧面是提供一种制造具备具有基材以及被设置于基材的一个主面侧的导电图形层的导电性基板、电子部件的电子装置的方法。
本发明的另一个侧面是提供一种制造具备具有基材以及被设置于基材的一个主面侧的导电图形层的导电性基板、发光元件的显示装置的方法。
一个形态所涉及的制造电子装置的方法以及制造显示装置的方法具备将电子部件或发光元件安装于由以上所述方法获得的导电性基板的工序。
附图说明
图1是示意性地表示制造第1实施方式所涉及的导电性基板的方法的截面图。
图2A是表示一个实施方式所涉及的导电性基板的部分放大图，图2B是表示现有导电性基板的一个例子的部分放大图。
图3是示意性地表示制造第2实施方式所涉及的导电性基板的方法的截面图。
图4是示意性地表示制造显示装置的方法的一个实施方式的截面图。
图5是示意性地表示制造显示装置的方法的其他实施方式的截面图。
图6是示意性地表示图5所表示的方法的变形例的截面图。
图7是示意性地表示由图4～图6所表示的方法制得的显示装置的主要部分的平面图。
图8是表示现有导电性基板制造方法的工序图。
图9是耐弯曲性试验机的概略图。
具体实施方式
以下是适当参照附图并就本发明的实施方式进行说明。但是，本发明并不限定于以下所述的实施方式。
[第1实施方式]
图1是示意性地表示第1实施方式所涉及的制造导电性基板1A的方法的截面图。在本实施方式所涉及的方法中，首先，如图1A所示将含有催化剂的基底层3形成于薄膜状的基材2的一个主面2a上。图1A的工序也可以是一种准备基材2以及具备被形成于基材2上的基底层3的层叠体。
基材2优选为透明基材，特别优选为透明树脂薄膜。透明树脂薄膜例如可以是聚对苯二甲酸乙二醇酯(PET)、聚碳酸酯(PC)、聚萘二甲酸乙二醇酯(PEN)、环烯烃聚合物(COP)、或者聚酰亚胺(PI)的薄膜。或者，基材2也可以是玻璃基板或者Si晶片等。
基材2的厚度可以是10μm以上、20μm以上、或者35μm以上，另外，可以是500μm以下、200μm以下、或者100μm以下。
基底层3含有催化剂以及树脂。树脂可以是固化性树脂，作为其例子可以列举氨基树脂、氰酸酯树脂、异氰酸酯树脂、聚酰亚胺树脂、环氧树脂、氧杂环丁烷树脂、聚酯树脂、烯丙基树脂、酚醛树脂、苯并恶嗪树脂(benzoxazine resin)、二甲苯树脂、酮树脂、呋喃树脂、COPNA树脂、硅树脂、双环戊二烯树脂、苯并环丁烯树脂、环硫树脂、烯硫醇树脂(ene-thiolresin)、聚甲亚胺树脂、聚乙烯基苄基醚化合物、苊烯(acenaphthylene)、不饱和双键和环醚以及乙烯基醚等的包含以紫外线发生聚合反应的官能团的紫外线固化树脂等。
包含于基底层3的催化剂优选为无电解电镀催化剂。无电解电镀催化剂可以是选自Pd、Cu、Ni、Co、Au、Ag、Pd、Rh、Pt、In、以及Sn当中的金属，优选为Pd。催化剂也可以是单独1种或者2种以上的组合。通常是催化剂作为催化剂颗粒分散于树脂中。
基底层3中的催化剂的含量可以是将基底层全量作为基准来设定为3质量％以上、4质量％以上、或者5质量％以上，并且可以设定为50质量％以下、40质量％以下、或者25质量％以下。
基底层3的厚度可以是10nm以上、20nm以上、或者30nm以上，并可以是500nm以下、300nm以下、或者150nm以下。
将基底层3形成于基材2上的方法并没有特别的限制，例如可以是将含有催化剂和树脂以及由必要而定的溶剂的基底层形成用的固化性树脂组合物涂布于基材2的主面2a上并使涂膜干燥以及/固化的方法。涂布例如可以使用刮棒涂布机来实行。
接着，如图1B所示将沟槽形成层4形成于基底层3的与基材2相反侧的面3a上。图1B的工序也可以是准备按下述顺序具备基材2、基底层3、沟槽形成层4的层叠体5A的工序。
沟槽形成层4优选为透明树脂层。另外，沟槽形成层4也可以是包含未固化的光固化性或者热固化性树脂的层。作为构成沟槽形成层4的光固化性树脂以及热固化性树脂的例子可以列举丙烯酸树脂、氨基树脂、氰酸酯树脂、异氰酸酯树脂、聚酰亚胺树脂、环氧树脂、氧杂环丁烷树脂、聚酯树脂、烯丙基树脂、酚醛树脂、苯并恶嗪树脂(benzoxazineresin)、二甲苯树脂、酮树脂、呋喃树脂、COPNA树脂、硅树脂、双环戊二烯树脂、苯并环丁烯树脂、环硫树脂、烯烃巯基树脂(ene-thiol resin)、聚甲亚胺树脂、聚乙烯基苄基醚化合物、苊烯(acenaphthylene)、不饱和双键和环醚以及乙烯基醚等的包含以紫外线发生聚合反应的官能团的紫外线固化树脂等。
沟槽形成层4的折射率(nd25)从提高导电性基板的透明性的观点出发优选小于基底层3的折射率，例如可以是1.0以上，另外，可以是1.7以下、1.6以下、或者1.5以下。折射率能够由反射分光膜厚仪来进行测定。
接着，如图1C以及图1D所示由使用了具有凸部7a的模具7的压印法(imprintingmethod)来形成沟槽(槽部)6。在该工序中，通过在以箭头A表示的方向上使具有规定形状的凸部7a的模具7移动从而压入到沟槽形成层4(图1C)。凸部7a的前端也可以直到到达基底层3而压入模具7。在此状态下，在沟槽形成层4为包含未固化的光固化性树脂或者热固化性树脂的层的情况下使之固化。在沟槽形成层4为包含光固化性树脂的层的情况下，通过照射紫外线等光从而就能够使沟槽形成层4固化。之后，通过取出模具7从而就形成了具有模具7的凸部7a的形状被翻转的形状的沟槽6(图1D)。
如图1D所示，沟槽6是由基底层3露出的底面6a、包含围绕底面6a的沟槽形成层4表面的相对的侧面6b,6c来形成。沟槽6是以对应于以后面所述工序被形成的导电图形层的图形被形成的形式在基底层3上进行延伸。也可以为了使基底层3露出于沟槽6的底面6a而在取出了模具7之后由干式蚀刻等蚀刻法来除去残存于沟槽6内的基底层3上的沟槽形成层4。
模具7可以由石英、Ni、紫外线固化性液状硅橡胶(PDMS)等来进行形成。模具7的凸部7a的形状即由模具7形成的沟槽6的形状并没有特别的限定，如图1D所示也可以以沟槽6的宽度从沟槽形成层4的与基底层3相反侧的表面4a向底面6a变窄的形式使侧面6b,6c相对于底面6a进行倾斜，并且也可以侧面6b,6c相对于底面6a为垂直。侧面6b,6c也可以形成台阶差。
沟槽6的宽度以及深度通常是以与在后面所述的工序中被形成的导电图形层的宽度以及厚度相对应的形式被设定。在本说明书中，所谓沟槽的宽度是指在与沟槽进行延伸的方向相垂直的方向上的最大宽度。沟槽深度相对于沟槽宽度之比也可以与后面所述的导电图形层的纵横比相同。
接着，如图1E所示形成填充沟槽6的导电图形层8。导电图形层8可以由从基底层3使金属镀敷生长的无电解电镀法来进行形成。导电图形层8既可以是由单一的金属镀敷构成的层，也可以由不同金属种类的多个金属镀敷构成。例如，导电图形层8也可以具有被形成于基底层3上的金属镀敷即种子层、在种子层的与基底层3相反侧的面上被形成的金属镀敷即1层以上的上部金属镀层。由于导电图形层8是将基底层作为起点被形成的金属镀敷，所以能够获得导电图形层8与基底层3的高紧密附着性。由此，在导电性基板进行重复弯曲的时候能够抑制导电图形层8从基底层3发生剥离，另外，能够维持良好的导电性。
作为导电图形层8的金属镀敷例如包含选自铜、镍、钴、钯、银、金、白金以及锡中的至少1种金属，优选包含铜。导电图形层8在恰当的导电性被维持的范围内也可以进一步包含磷等非金属元素。
在导电图形层8具有种子层以及上部金属镀层的情况下，构成种子层的金属与构成上部金属镀层的金属既可以相同又可以不同，例如，也可以种子层包含镍而上部金属镀层包含铜。上部金属镀层也可以由被形成于种子层上的铜镀层和被形成于铜镀层上的包含金或者钯的最上层构成。
通过将沟槽6被形成的层叠体5A浸渍于含有金属离子的无电解电镀液中，从而就能够将包含于基底层3中的催化剂作为起点来形成作为导电图形层8的金属镀敷。通过形成填充了沟槽6的导电图形层8，从而就能够获得导电性基板1A。
无电解电镀液包含构成导电图形层8的金属离子。无电解电镀液也可以进一步含有磷、硼、铁等。
在使层叠体5A浸渍于无电解电镀液的时候的无电解电镀液的温度例如可以是40～90℃。另外，无电解电镀液的浸渍时间由导电图形层8的厚度等而会有所不同，例如为10～30分钟。
导电图形层8是以对应于沟槽6的图形被形成的形式在基底层3上进行延伸。导电图形层8的厚度既可以实质上与沟槽形成层4的厚度相一致，又可以导电图形层8的厚度相对于沟槽形成层4的厚度之比处于0.8～1.2的范围内。
导电图形层8的宽度既可以是1μm以上、10μm以上、或者20μm以上，也可以是90μm以下、70μm以下、或者30μm以下。在本说明书中，所谓导电图形层的宽度是指在垂直于导电图形层延伸方向的方向上的最大宽度。
导电图形层8的宽度从提高导电性基板的透明性的观点出发可以是0.3μm以上、0.5μm以上、或者1.0μm以上，也可以是5.0μm以下、4.0μm以下、或者3.0μm以下。
导电图形层8的厚度可以是0.1μm以上、1.0μm以上、或者2.0μm以上，也可以是10.0μm以下、5.0μm以下、或者3.0μm以下。导电图形层8的宽度以及厚度能够通过变更后面所述的模具7的设计并变更沟槽6的宽度以及厚度来进行调整。
导电图形层8的纵横比可以是0.1以上、0.5以上、或者1.0以上，也可以是10.0以下、7.0以下、或者4.0以下。通过将导电图形层8的纵横比控制在上述范围从而就能够进一步提高导电图形8的对基底层3的紧密附着性，并且还能够进一步提高导电性。所谓导电图形层的纵横比是指导电图形层的厚度相对于导电图形层的宽度之比(厚度/宽度)。
具有种子层以及上部金属镀层的导电图形层能够由包含使种子层形成于基底层上的工序和使上部金属镀层形成于种子层上的工序的方法来进行形成。通过将沟槽6被形成的层叠体5A浸渍于种子层形成用的无电解电镀液，从而就能够将包含于基底层3中的催化剂作为起点来将金属镀敷作为种子层进行形成。之后，通过将具有种子层的层叠体浸渍于导电层形成用的无电解电镀液中，从而就能够形成上部金属镀层。也可以在形成上部金属镀层之前使催化剂吸附于种子层，并且将吸附于种子层的催化剂作为起点来形成上部金属镀层。
种子层的厚度可以是10nm以上、30nm以上、或者50nm以上，另外，也可以是500nm以下、300nm以下、或者100nm以下。
导电图形层8优选以在其侧面8b,8c的至少一部分与沟槽6的侧面6b以及/或者6c之间形成间隙的形式被形成。由此，就能够更加有效地抑制导电性基板1A进行弯曲的时候的导电图形层8的损伤。间隙优选被形成于导电图形层8的侧面8b以及8c与沟槽6的相对的侧面6b以及6c的双方之间。间隙的宽度可以是1nm以上、5nm以上、或者10nm以上，另外，可以是150nm以下、125nm以下、或者100nm以下。所谓间隙的宽度是指垂直于电图形层8延伸方向的方向上的导电图形层8与沟槽6的距离的最大值。通过从基底层3或者基底层3上的种子层使金属镀敷生长，从而就能够容易地使间隙形成于导电图形层8与沟槽6的侧面6b,6c之间。
导电图形层8例如也可以包含沿着一定的方向进行延伸的多个线状部，并且也可以形成网目状的图形。
本实施方式中的制造导电性基板的方法对应于必要也可以进一步具备使导电图形层8的表面的至少一部分黑化的工序。例如，也可以使导电图形层8的与沟槽6的底面6a相反侧的面8a(以下会有称作为导电图形层的上表面8a的情况)、导电图形层8的沟槽6的底面6a侧的面、或者这两个面双方黑化。另外，也可以使导电图形层8的侧面8b,8c黑化。在此，所谓“使表面黑化”意味着以相对于入射到该表面的光的正反射率被降低的形式加工表面。
使导电图形层8的表面黑化的方法并没有特别的限制，例如可以列举对表面实行粗化的方法、以及用吸收比原始表面更多光的层换言之比原始表面更黑的层(以下称之为“黑化层”)来覆盖原始表面的方法。黑化层既可以是用黑色金属镀敷用的镀液来进行形成的黑色金属镀敷，也可以是由RAYDENT处理(注册商标)进行形成的黑色金属镀敷。黑化层通常是作为构成导电图形层8的一部分的导电层被设置。
作为用黑色金属镀敷用的镀液来进行形成的黑色金属镀敷可以列举黑镍镀层、黑铬镀层、锌镀层的黑色铬酸盐、黑铑镀层、黑钌镀层、锡-镍-铜的和合金镀层、锡-镍的合金镀层、置换钯镀层。
导电图形层8的底面6a侧的表面例如通过在形成了沟槽6之后将黑色金属镀敷(例如黑镍镀层)作为种子层被形成于基底层3上并且将上部金属镀层形成于种子层上，从而就能够进行黑化。导电图形层8的与底面6a相反侧的面8a通过在形成了导电图形层8之后形成覆盖面8a的黑色金属镀敷，从而就能够进行黑化。在间隙被形成于导电图形层8的侧面8b,8c与沟槽6的侧面6b,6c之间的情况下，多数情况是由对黑色金属镀敷用的镀液的浸渍而形成覆盖导电图形层8的与沟槽6的底面6a相反侧的面8a并且覆盖导电图形层8的侧面8b,8c的黑色金属镀敷。
黑化层(黑色金属镀敷的膜)的厚度可以是10nm以上、30nm以上、或50nm以上，另外，可以是150nm以下、125nm以下、或者100nm以下。
在由对表面实行粗化的方法来使表面黑化的情况下，以表面粗糙度Ra优选成为15nm以上的形式对表面实行粗化。Ra进一步优选为60nm以下。Ra能够由扫描探针显微镜(SPM)来进行测定。粗化可根据由酸处理等来粗化导电图形层8表面的方法或者以导电图形层8的表面变粗的形式形成导电图形层8的方法等被实行。
本实施方式中的制造导电性基板的方法对应于必要也可以进一步具备形成覆盖沟槽形成层4以及导电图形层8的与基材2相反侧的面的至少一部分的保护膜的工序。保护膜例如也可以包含树脂以及填充料。作为保护膜的树脂的例子可以列举氨基树脂、异氰酸酯树脂、硅树脂、丙烯酸树脂、聚碳酸酯树脂、氟树脂、不饱和双键和环醚以及乙烯基醚等的包含以紫外线发生聚合反应的官能团的紫外线固化树脂等。作为保护膜的填充料的例子可以列举氧化硅、氧化锆、氧化钛、氧化铝、氟化镁氧化锌、氧化锑、磷掺杂氧化锡、锑掺杂氧化锡、锡掺杂氧化铟、Ag纳米胶体等。保护膜例如能够通过将保护膜形成用的树脂组合物涂布于沟槽形成层4以及导电图形层8的与基材2相反侧的面上并且对应于必要对涂膜实行干燥以及/或者固化来进行形成。在间隙被形成于导电图形层8与沟槽6的侧面6b,6c之间的情况下，保护膜也可以填充该间隙。
保护膜的厚度可以是10nm以上、50nm以上、或者100m以上，另外，可以是5000nm以下、3000nm以下、或者1000nm以下。
保护膜的折射率从导电性基板的透明性的观点出发可以是1.0以上、或者1.3以上、另外，可以是1.6以下、或者1.5以下。保护膜的折射率优选小于沟槽形成层4的折射率。保护膜的折射率例如能够通过增减填充料的含量来进行调整。
本就实施方式所涉及的方法在所谓能够容易地形成一定宽度的导电图形层这一点上也表现优异。图2是表示具有形成了网目状图形的导电图形层的导电性基板例子的部分放大图。在由本实施方式所涉及的方法而被形成的导电性基板的情况下，如图2A所例示的那样导电图形层8的宽度即使是在2根导电图形层8的交点附近的区域P也不会发生大的变化，并且容易维持一定宽度。相对于此，如果是由蚀刻来形成导电图形层的现有方法，则会有如图2B所例示的那样导电图形层8’的宽度在2根导电图形层8’的交点附近的区域Q变大的情况。导电图形层8的宽度在交点附近的区域不会变大的结果在全光线透过率变高的这一点上是有利的。导电图形层8的宽度偏差小的结果在全光线透过率偏差小的这一点上是有利的。
再有，本实施方式所涉及的方法因为凭靠蚀刻的多余部分导电材料的除去不是必须的所以削减工序数是可能的。
[第2实施方式]
图3是示意性地表示第2实施方式所涉及的制造导电性基板1B的方法的截面图。对于与图1的第1实施方式所涉及的方法相对应的结构以及部分标注相同的符号，并省略重复的说明。
本实施方式所涉及的方法在形成沟槽6的工序之后，在包含使催化剂10吸附于露出于沟槽6的底面6a的基底层9的工序(图3E)并且从催化剂10所吸附的基底层9使作为导电图形层8的金属镀敷生长这一点上与第1实施方式不同。
如图3所示，被形成于基材2的主面2a上的基底层9通常是不含有催化剂但能够使催化剂吸附的层。基底层9可由聚乙炔、聚并苯、聚对苯、聚对苯撑乙烯(polyparaphenylenevinylene)、聚吡咯、聚苯胺、聚噻吩、以及它们的各种衍生物等树脂形成。被吸附于基底层9的催化剂可以是与第1实施方式相同的无电解电镀催化剂。例如，通过具有基底层9露出的底面6a的沟槽6被形成的层叠体浸渍于含有催化剂的水溶液中，从而就能够使催化剂吸附于基底层9。其他工序与第1实施方式相同。
[显示装置]
通过将发光元件安装于由以上所述方法制得的导电性基板，从而就能够制造出具备该导电性基板以及发光元件的显示装置。以上所述的导电性基板因为从基底层发生的导电图形层的剥离被抑制，所以具备该导电性基板的显示装置能够被制造成薄如布或者纸那样，可以作为能够弯曲并且弄圆的柔性(挠性)显示装置(display)来使用。如此柔性(挠性)显示装置能够实行小型化·轻量化，并且能够提高收纳性·设计性。
图4是示意性地表示制造显示装置的方法的一个实施方式的截面图。在该方法中，首先，如图4A所示准备发光元件40和导电性基板1A。发光元件40具备发光部41、被设置于发光部41的一个主面41a上的正极42、从正极42空开间隔并被设置于主面41a上的负极43。以下会有将正极42以及负极43统称成电极42,43的情况。发光元件40可以是能够发出红色、绿色光或者蓝色光的元件。发光元件40例如可以是发光二极管(LED)。本实施方式的情况是导电性基板1A中的导电图形层8包含沿着一定方向进行延伸的多个线状部81,82。
发光元件40的形状(发光部41的形状)并没有被特别限制，例如可以是大致矩形状(长方形状、正方形状等)。发光元件40的尺寸可以被适当设定，但是在发光元件40为矩形状的情况下发光元件40的宽度从进一步提高显示装置的分辨率的观点出发优选为100μm以下、80μm以下、60μm以下、30μm以下、或者20μm以下。在此情况下的发光元件40的长度优选为50μm以下、40μm以下、30μm以下、20μm以下、或者10μm以下。发光元件40的宽度可以是5μm以上、10μm以上、或者20μm以上。在此情况下的发光元件40的长度可以是5μm以上、或者10μm以上。发光元件40的宽度在后面所述的工序中在将发光元件40安装于导电性基板1A的时候作为对应于导电图形层8宽度的方向被设定。发光元件40的长度作为沿着导电图形层8延伸方向的方向被设定。
接着，如图4B所示将发光元件40安装于导电性基板1A。该工序包含将发光元件40的电极42,43连接于导电性基板1A的导电图形层8的工序。此时，通过分别使发光元件40的正极42以及负极43接触于导电图形层8的相邻的2个线状部81,82，从而发光元件40与导电图形层8相电连接。由此，就能够获得发光元件40被安装于导电性基板1A的显示装置50A。
图5是示意性地表示制造显示装置的方法的其他实施方式的截面图。在该方法中，将发光元件40安装于导电性基板1A的工序在包含将连接部形成于导电性基板1A中的导电图形层8上的处理和经由连接部将发光元件40连接于导电图形层8的处理这一点上与以上所述的实施方式不同。
在该方法中，首先，如图5A和图5B所示将连接部44形成于导电性基板1A中的导电图形层8上。连接部44可以以与导电图形层8的上表面8a上的至少一部分相接触的形式被形成。
连接部44可以通过使用由焊料合金构成的微小球而形成于导电图形层8的上表面8a上，也可以通过印刷由焊料合金构成的膏体(浆料)来形成。连接部44也可以由从导电图形层8使金属镀敷生长的无电解电镀法来形成。在连接部44根据无电解电镀法被形成的情况下，连接部44既可以包含作为构成材料的锡、银、铜、铋、铟等，也可以包含由这些金属中任意2个以上金属元素构成的合金。在本实施方式中，连接部44优选用由焊料合金构成的微小球或者膏体(浆料)来形成。
连接部44的尺寸只要是发光元件40中的电极42,43是能够接触的大小，则可以被适当设定。例如，如图5B所示连接部44的宽度也可以以与导电图形层8宽度相同的尺寸进行形成。连接部44被形成为小于导电图形层8的宽度，导电图形层8的上表面8a的一部分也可以露出。
接着，如图5C所示通过使发光元件40的电极42,43接触于连接部44上的与导电图形层8相接触的面的相反侧的面44a，从而经由连接部44使发光元件40连接于导电性基板1A。此时，通过使发光元件40中的正极42以及负极43接触于相邻的2个连接部44，从而电连接发光元件40。由此，就能够获得发光元件40被安装于导电性基板1A的显示装置50B。
图6是示意性地表示包含经由连接部44使发光元件40连接于导电性基板1A的处理的制造显示装置的方法的一个变形例的截面图。根据本变形例，因为对于导电性基板1A能够更适宜并且更容易地安装发光元件40，所以在将更小的发光元件40安装于导电性基板1A的情况下被特别优选使用。
在该方法中，首先，如图6A以及图6B所示将紧密附着层45形成于导电性基板1A的导电图形层8上。紧密附着层45也可以被形成于导电图形层8的上表面8a上的至少一部分。通过形成紧密附着层45，从而在将后面所述的绝缘层形成于沟槽形成层4上以及导电图形层8上的时候能够抑制绝缘层的剥离。
紧密附着层45优选根据从导电图形层8使金属镀敷生长的无电解电镀法被形成。紧密附着层45从提高与后面所述的UBM层再有被设置于UBM层上的连接部44以及发光元件40的紧密附着性的观点出发，优选包含作为构成材料的选自镍以及镍合金当中的至少1种。紧密附着层45除了选自镍以及镍合金当中的至少1种之外更加优选含有选自锌以及磷当中的至少1种。
对于紧密附着层45来说优选与接触于导电图形层8的面相反侧的面45a(以下也会称作为紧密附着层45的上表面45a)被粗化。通过紧密附着层45的上表面45a被粗化，从而后面所述的绝缘层由锚定效应而容易变得更加紧密附着。
对紧密附着层45的上表面45a实行粗化的方法是根据由酸处理等来对电镀后的紧密附着层45的上表面45a实行粗化的方法或者在以紧密附着层45的表面变粗糙的形式调整镀液之后形成紧密附着层45的方法等被实行。
紧密附着层45的表面粗糙度Ra从进一步提高与后面所述的绝缘层的紧密附着性的观点出发优选为0.1μm以上，进一步优选为0.3μm以上，更加优选为0.5μm以上。Ra从确保显示装置的强度的观点出发优选为1μm以下，进一步优选为0.8μm以下，更加优选为0.7μm以下。Ra能够由与关于以上所述的黑化层已作了说明的方法相同的测定方法来进行测定。
紧密附着层45的厚度从获得适宜的表面粗糙度Ra的观点出发优选为0.1μm以上，进一步优选为0.5μm以上，更加优选为1.0μm以上。紧密附着层45的厚度可以是2.0μm以下、1.8μm以下、或者1.5μm以下。
接着，如图6C所示，覆盖沟槽形成层4的与基底层3相反侧的表面4a并具有紧密附着层45的上表面45a露出的开口部的绝缘层46被形成。绝缘层46优选以覆盖沟槽形成层4的表面4a和紧密附着层45的一部分(例如紧密附着层45的上表面45a的端部)的形式被形成。
绝缘层46是由具有绝缘性的素材来形成。具有绝缘性的素材可以是无机材料或者树脂。作为无机材料例如可以列举SiO2、SiN等含有硅的化合物。作为树脂可以列举环氧树脂、聚酰亚胺等。
如图6D所示，将UBM层(下部阻挡金属层under barrier metal layer)47形成于露出于绝缘层46开口部内的紧密附着层45的上表面45a上。UBM层47优选根据从紧密附着层45使金属镀敷生长的无电解电镀法被形成。UBM层47可以包含选自镍、钴、铁以及铜当中的至少1种金属。UBM层47也可以进一步包含磷等非金属元素。UBM层47优选含有镍或者优选含有镍以及磷。
如图6E所示，将连接部44形成于UBM层47的与导电性基板1A相反侧的面47a上。连接部44的构成材料以及形成方法可以与以上所述的实施方式中的构成材料以及形成方法相同，但是对于本变形例来说从安装更小的发光元件40的观点出发，连接部44优选根据从UBM层47使金属镀敷生长的无电解电镀法被形成。连接部44优选包含作为构成材料的锡或者其合金。被形成于UBM层47上的连接部44其一部分也可以接触于绝缘层46的表面。
如图6F所示，将发光元件40连接于被形成了的连接部44。由此，就能够获得发光元件40经由连接部44、UBM层47以及紧密附着层45被连接于导电性基板1A的导电图形层8的显示装置50C。即，由包含形成紧密附着层45、绝缘层46、UBM层47以及连接部44的加工和将发光元件40连接于连接部44的加工的工序而将发光元件40安装于导电性基板1A。
图7是示意性地表示由图4～图6所表示的方法制得的显示装置50(50A～50C)主要部分的平面图。在图7所表示的显示装置50中，多个发光元件40(40a、40b以及40c)一边跨立于导电性基板1A上的导电图形层8的相邻的2个线状部81,82一边沿着这些线状部的延伸方向L被排列。发光元件40可以由具有红色发光部的发光元件40a、具有绿色发光部的发光元件40b、以及具有蓝色发光部的发光元件40c构成，这些发光元件40a、40b以及40c可以以任意顺序被配置。作为进行邻接的发光元件40(40a、40b以及40c)彼此的间隔例如导电图形层8的宽度方向上的间隔D1可以是400μm以下，导电图形层8的延伸方向L上的间隔D2可以是200μm以下。
在制造以上所述的显示装置50的方法中，也可以进一步具备设置覆盖发光元件40露出部分的封闭部的工序。封闭部例如可以由硅树脂、环氧树脂、烯烃树脂等树脂来进行形成。
即使相对于由第2实施方式所涉及的方法进行制造的导电性基板1B也能够根据与第1实施方式相同的方法安装发光元件，并且能够制造显示装置。
[电子装置]
在其他的实施方式中，根据上述制造方法制造的导电性基板上，也能够安装发光元件以外的电子部件。作为发光元件以外的电子部件，可以列举例如电容器、电感器、热敏电阻等的无源元件、半导体元件、连接器等。由此，除显示装置以外，也能够制造根据上述方法制造的导电性基板上具备电子部件的电子装置。
[实施例]
以下是由实施例来具体说明本发明，但是本发明并不限定于这些实施例。
[实施例1]
准备含有20质量％的Pd颗粒和异氰酸酯树脂的基底层形成用的含有催化剂的树脂。用刮棒涂布机(bar coater)来将该含有催化剂的树脂涂布于透明基材即PET薄膜(厚度100μm)上。通过将涂膜加热到80℃并使之固化，从而形成基底层(厚度100nm)。之后，使用刮棒涂布机来将紫外线固化性的透明丙烯酸树脂类低聚物涂布于基底层上并形成沟槽形成层(厚度2μm)。
准备具有形成了网目状图形的宽度1μm的凸部的Ni制模具。将该模具推压于沟槽形成层并使模具的凸部的前端到达基底层。在该状态下由紫外线照射来使沟槽形成层固化。由此，就形成了具有基底层露出的底面的沟槽。沟槽的宽度为1μm，深度为2μm，相邻的沟槽的间隔为100μm。
将具有形成了沟槽的沟槽形成层的层叠体浸渍于含有表面活性剂的碱性脱脂液中5分钟。之后，用纯水清洗从脱脂液中取出的层叠体。将清洗后的层叠体浸渍于含有硫酸镍以及次磷酸钠的无电解电镀液中3分钟，从露出于沟槽底面的基底层使作为由Ni和P构成的种子层(厚度100nm)的金属镀敷生长。用纯水清洗从无电解电镀液中取出的层叠体。接着，在将形成了种子层的层叠体浸渍于含有Pd的水溶液中5分钟之后用纯水清洗并使作为催化剂的Pd颗粒吸附于种子层。之后，通过将层叠体浸渍于含有硫酸铜以及福尔马林的无电解电镀液中15分钟，从而使填充沟槽的Cu镀层(上部金属镀层)生长于种子层上。用纯水清洗从无电解电镀液取出的层叠体，在80℃温度条件下使之干燥3分钟，从而形成网目状图形并获得具有由种子层以及Cu镀层构成的导电图形层的导电性基板。在该导电性基板中，导电图形层的宽度W为1μm，厚度为2μm，纵横比(厚度/宽度)为2。相邻的导电图形层彼此的间隔S为200μm。对于所获得的导电性基板使用截面抛光机，切割出导电图形层的截面，通过使用扫描电子显微镜来进行观察从而可以确认在沟槽的侧面与导电图形层的侧面之间形成了间隙。
[实施例2～5]
除了将导电图形层的宽度W(沟槽的宽度)以及导电图形层的厚度(沟槽的深度)变更到表1所记载的值之外，其余均以与实施例1相同的方法来制作导电性基板。
[实施例6～9]
除了将导电图形层的厚度(沟槽的深度)变更到表1所记载的值之外，其余均以与实施例1相同的方法来制作导电性基板。
[比较例1]
按照图8所表示的现有制造方法制作不配备基底层的导电性基板。首先，将紫外线固化性的透明丙烯酸树脂类低聚物涂布于与实施例相同的PET薄膜(基材2)，并形成沟槽形成层4(厚度2μm)。将形成了网目状图形的具有宽度1μm凸部的模具推压于沟槽形成层4，并使凸部的前端到达基材2。在此状态下，通过由紫外线照射来使沟槽形成层4固化，从而获得具有基材2露出的底面的沟槽6被形成了的层叠体5C(图8A)。接着，根据溅射法形成由覆盖沟槽形成层4的表面4a以及底面6a全体的Cu构成的种子层11(图8B)。之后，通过将层叠体5C浸渍于含有硫酸铜以及福尔马林的无电解电镀液中从而从种子层11使Cu镀层生长，形成填充沟槽6并覆盖沟槽形成层4全体的Cu镀层8A(图8C)。之后，由蚀刻来除去Cu镀层8A当中填充沟槽6内部的部分以外的部分(图8D)，从而制作出具有导电图形层8的比较例1所涉及的导电性基板1C。对于所获得的导电性基板使用截面抛光机，切割出导电图形层的截面，通过使用扫描电子显微镜来进行观察从而可以确认导电图形层8与沟槽6的侧面6b,6c紧密附着并且在它们之间形成间隙。
＜弯曲试验＞
准备长150mm；宽50mm的各个导电性基板的试样。将该试样提供给使用了图9所表示的耐弯曲性试验机的遵照JISC5016的弯曲试验。即，通过一边将导电性基板1的端部12固定于固定部13一边使导电性基板1沿着弯曲部14的圆形的周面(曲率半径d：5mm)，从而以导电性基板1进行弯曲的形式进行配置。之后，沿着箭头B所表示的方向使与端部12相反侧的端部15往返。往返的移动距离为30mm，往返的周期为150次/分钟，重复使端部15往返1分钟。
＜导电性的评价(表面电阻的测定)＞
使用非接触式电阻测定器EC-80P[日本NAPSON CORPORATION制]，分别对于弯曲试验前后的导电性基板测定表面电阻。测定是对于导电性基板的表面φ20mm的区域来实行的。根据测定结果以以下所述的4个阶段的等级来评价导电性。在等级A的情况下，可以说导电性最优异。
等级A：表面电阻小于5Ω/□
等级B：表面电阻为5Ω/□以上小于10Ω/□
等级C：表面电阻为10Ω/□以上小于15Ω/□
等级D：表面电阻为15Ω/□以上
＜紧密附着性的评价＞
用扫描电子显微镜来观察弯曲试验后的导电性基板的截面，确认导电图形层有无从基底层或者基材发生剥离。
＜透明性的评价＞
使用浊度计(Haze meter)NDH5000(日本电色工业株式会社制)并遵照JISK7136来测定导电性基板的全光线透过率。相对于测定结果，根据以下所述的3个阶段的等级评价透明导电性基板的透明性。在等级A的情况下，可以说透明性最优异。
等级A：导电性基板的全光线透过率/基材的全光线透过率×100％＝98％以上
等级B：导电性基板的全光线透过率/基材的全光线透过率×100％＝96％以上小于98％
等级C：导电性基板的全光线透过率/基材的全光线透过率×100％＝小于96％
[表1]
如表1所示，对于实施例1～9的导电性基板来说可以了解到在弯曲试验后，导电图形层的剥离被抑制并维持了良好的导电性。
[实施例10～12]
以与实施例1相同的方法制作出多个导电性基板。在将该导电性基板浸渍于含有Pd的水溶液中5分钟之后用纯水清洗，并使作为催化剂的Pd颗粒吸附于导电图形层的表面。之后，将导电性基板浸渍于黑Ni电镀用的无电解电镀液中3分钟，作为导电图形层的与沟槽的底面相反侧以及沟槽侧面侧的最表层而形成了黑色Ni镀膜。用纯水清洗从无电解电镀液中取出的各个导电性基板。进一步对黑色Ni镀膜实行酸处理，通过调整酸处理的时间从而将黑Ni镀膜的表面粗糙度Ra调整到15nm(实施例10)、58nm(实施例11)或者65nm(实施例12)。Ra是使用扫描探针显微镜在1μm的视野中进行测定。实施例1的导电图形层的Ra为8nm。
＜导电性的评价、透过率的测定＞
由与以上所述的方法相同的方法来对于实施例10～12以及实施例1的导电性基板评价透明性以及导电性。如表2所示就可了解到在Ra为15～60nm的时候透明性以及导电性特别优异。
[表2]
[实施例13～15]
以与实施例1相同的方法制作多个导电性基板。用刮片(doctor blade)将保护膜形成用的固化性树脂组合物涂布于这些导电性基板的沟槽形成层以及导电图形层的表面。在干燥了涂膜之后由紫外线照射来使之固化，从而形成覆盖沟槽形成层以及导电图形的保护膜(厚度100nm)。这里所使用的保护膜形成用的固化性树脂组合物含有填充料(氧化硅)以及氟树脂。通过变更填充料的含量从而以成为表3所记载的值的形式调整保护膜的折射率。
＜透明性的评价＞
根据与以上所述的方法相同的方法对于实施例13～15以及实施例1的导电性基板测定导电性基板的透明性。将测定结果表示于表3中。如表3所示，可以了解到保护膜的折射率大于空气的折射率1.0，另外，在小于沟槽形成层的折射率的情况下透明性特别优异。
[表3]
根据本发明就能够制造出一种具有填充了沟槽的导电图形层并且由弯曲引起的导电图形层剥离以及导电性降低被抑制的导电性基板。与包含凭靠蚀刻的导电层的除去的方法相比较，相对来说容易适当地将大厚度赋予导电图形层，因此本发明的方法在所谓容易获得良好的导电性这一点上也表现优异。
再有，本发明还能够提供制造在导电性基板上导电图形层的剥离被抑制的电子装置或显示装置的方法。近年来，具备发光二极管(LED)等发光元件的显示装置(例如LED显示器)的开发不断进展。相对于就液晶显示器(LCD)而言是由透过型液晶来控制背光的光的技术，而就LED显示器而言是使用自然发光元件即发光二极管来构成像素。由此，LED显示器具有所谓高辉度、长寿命、大视角的特征。
对于具备发光元件的显示装置来说，如果为了提高其分辨率而减小发光元件自身的话即可。但是，因为如果发光元件小，则有必要形成细微的导电图形层，所以导电图形层容易发生剥离，另外，会有确保导电性变得困难的倾向。根据本发明，即使是发光元件小的情况，导电性基板上的导电图形层也难以发生剥离，并且能够容易地制造出在发光元件与导电性基板的紧密附着性方面也表现出更加优异的显示装置。
符号说明
1A,1B. 导电性基板
2. 基材
3. 基底层
6. 沟槽
6a. 沟槽的底面
6b,6c. 沟槽的侧面
8. 导电图形层
40. 发光元件
44. 连接部
45. 紧密附着层
46. 绝缘层
47. UBM层
50. 显示装置

Claims (15)

1.一种制造导电性基板的方法，其特征在于，
所述导电性基板具有基材以及被设置于所述基材的一个主面侧的导电图形层，
所述方法包括：
由包含将具有凸部的模具压入到在形成于所述基材上的基底层上形成的沟槽形成层的处理的压印法，来形成具有所述基底层露出的底面和包含所述沟槽形成层的表面的侧面的沟槽的工序，其中所述基底层包含催化剂；以及
从露出于所述沟槽的底面的所述基底层使金属镀敷生长并由此形成包含所述金属镀敷并且填充所述沟槽的所述导电图形层的工序。
2.一种制造导电性基板的方法，其特征在于，
所述导电性基板具有基材以及被设置于所述基材的一个主面侧的导电图形层，
所述方法包括：
由包含将具有凸部的模具压入到在形成于所述基材上的基底层上形成的沟槽形成层的处理的压印法，来形成具有所述基底层露出的底面和包含所述沟槽形成层的表面的侧面的沟槽的工序；
使催化剂吸附于露出于所述沟槽的底面的所述基底层的工序；以及
从所述催化剂所吸附的基底层使金属镀敷生长并由此形成包含所述金属镀敷并填充所述沟槽的所述导电图形层的工序。
3.如权利要求1或者2所述的方法，其特征在于，
以在所述导电图形层的侧面中的至少一部分与所述沟槽的侧面之间形成间隙的形式使所述金属镀敷生长。
4.如权利要求1～3中任意一项所述的方法，其特征在于，
进一步具备使所述导电图形层的、包含与所述沟槽的底面相反侧的面的表面黑化的工序。
5.如权利要求1～4中任一项所述的方法，其特征在于，
进一步具备形成覆盖所述沟槽形成层以及所述导电图形层的与所述基材相反侧的面中的至少一部分的保护膜的工序。
6.如权利要求1～5中任一项所述的方法，其特征在于，
所述导电图形层形成网目状的图形。
7.一种制造电子装置的方法，其特征在于，
所述电子装置具备具有基材以及被设置于所述基材的一个主面侧的导电图形层的导电性基板、以及电子部件，
所述方法包括：
由包含将具有凸部的模具压入到在形成于所述基材上的基底层上形成的沟槽形成层的处理的压印法，来形成具有所述基底层露出的底面和包含所述沟槽形成层的表面的侧面的沟槽的工序，其中，所述基底层包含催化剂；
从露出于所述沟槽的底面的所述基底层使金属镀敷生长并由此形成包含所述金属镀敷并且填充所述沟槽的所述导电图形层的工序；以及
将所述电子部件安装于具有所述基板以及所述导电图形层的所述导电性基板的工序。
8.一种制造电子装置的方法，其特征在于，
所述电子装置具备具有基材以及被设置于所述基材的一个主面侧的导电图形层的导电性基板、以及电子部件，
所述方法包括：
由包含将具有凸部的模具压入到在形成于所述基材上的基底层上形成的沟槽形成层的处理的压印法，来形成具有所述基底层露出的底面和包含所述沟槽形成层的表面的侧面的沟槽的工序；
使催化剂吸附于露出于所述沟槽的底面的所述基底层的工序；
从所述催化剂所吸附的基底层使金属镀敷生长并由此形成包含所述金属镀敷并且填充所述沟槽的所述导电图形层的工序；以及
将所述电子部件安装于具有所述基板以及所述导电图形层的所述导电性基板的工序。
9.如权利要求7或8所述的方法，其特征在于，
将所述电子部件安装于所述导电性基板的工序包括：
将连接部形成于所述导电图形层上；以及
经由所述连接部将所述电子部件与所述导电图形层相连接。
10.如权利要求7或8所述的方法，其特征在于，
将所述电子部件安装于所述导电性基板的工序包括：
将紧密附着层形成于所述导电图形层上；
形成覆盖所述沟槽形成层的与所述基底层相反侧的表面并且具有所述紧密附着层的一部分露出的开口部的绝缘层；
将UBM层形成于露出于所述紧密附着层的开口部内的所述紧密附着层的面上；
将连接部形成于所述UBM层上；以及
经由所述连接部、所述UBM层以及所述紧密附着层将所述电子部件与所述导电图形层相连接。
11.一种制造显示装置的方法，其特征在于，
所述显示装置具备具有基材以及被设置于所述基材的一个主面侧的导电图形层的导电性基板、以及发光元件，
所述方法包括：
由包含将具有凸部的模具压入到在形成于所述基材上的基底层上形成的沟槽形成层的处理的压印法，来形成具有所述基底层露出的底面和包含所述沟槽形成层的表面的侧面的沟槽的工序，其中，所述基底层包含催化剂；
从露出于所述沟槽的底面的所述基底层使金属镀敷生长并由此形成包含所述金属镀敷并且填充所述沟槽的所述导电图形层的工序；以及
将所述发光元件安装于具有所述基板以及所述导电图形层的所述导电性基板的工序。
12.一种制造显示装置的方法，其特征在于，
所述显示装置具备具有基材以及被设置于所述基材的一个主面侧的导电图形层的导电性基板、以及发光元件，
所述方法包括：
由包含将具有凸部的模具压入到在形成于所述基材上的基底层上形成的沟槽形成层的处理的压印法，来形成具有所述基底层露出的底面和包含所述沟槽形成层的表面的侧面的沟槽的工序；
使催化剂吸附于露出于所述沟槽的底面的所述基底层的工序；
从所述催化剂所吸附的基底层使金属镀敷生长并由此而形成包含所述金属镀敷并且填充所述沟槽的所述导电图形层的工序；以及
将所述发光元件安装于具有所述基板以及所述导电图形层的所述导电性基板的工序。
13.如权利要求11或12所述的方法，其特征在于，
将所述发光元件安装于所述导电性基板的工序包括：
将连接部形成于所述导电图形层上；以及
经由所述连接部将所述发光元件与所述导电图形层相连接。
14.如权利要求11或12所述的方法，其特征在于，
将所述发光元件安装于所述导电性基板的工序包括：
将紧密附着层形成于所述导电图形层上；
形成覆盖所述沟槽形成层的与所述基底层相反侧的表面并且具有所述紧密附着层的一部分露出的开口部的绝缘层；
将UBM层形成于露出于所述紧密附着层的开口部内的所述紧密附着层的面上；
将连接部形成于所述UBM层上；以及
经由所述连接部、所述UBM层以及所述紧密附着层将所述发光元件与所述导电图形层相连接。
15.如权利要求7～14中任一项所述的方法，其特征在于：
以在所述导电图形层的侧面中的至少一部分与所述沟槽的侧面之间形成间隙的形式使所述金属镀敷生长。
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