CN109148670B - Led倒装芯片封装基板和led封装结构 - Google Patents
Led倒装芯片封装基板和led封装结构 Download PDFInfo
- Publication number
- CN109148670B CN109148670B CN201810972115.5A CN201810972115A CN109148670B CN 109148670 B CN109148670 B CN 109148670B CN 201810972115 A CN201810972115 A CN 201810972115A CN 109148670 B CN109148670 B CN 109148670B
- Authority
- CN
- China
- Prior art keywords
- layer
- substrate
- insulating protective
- protective layer
- pads
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 138
- 238000004806 packaging method and process Methods 0.000 title abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 56
- 239000002184 metal Substances 0.000 claims abstract description 56
- 239000000919 ceramic Substances 0.000 claims abstract description 54
- 239000011521 glass Substances 0.000 claims abstract description 31
- 230000004224 protection Effects 0.000 claims abstract description 20
- 239000010410 layer Substances 0.000 claims description 166
- 239000011241 protective layer Substances 0.000 claims description 52
- 230000003287 optical effect Effects 0.000 claims description 47
- 239000000463 material Substances 0.000 claims description 40
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 38
- 238000002310 reflectometry Methods 0.000 claims description 16
- 239000002356 single layer Substances 0.000 claims description 12
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical group [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 10
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 10
- 230000008018 melting Effects 0.000 claims description 10
- 238000002844 melting Methods 0.000 claims description 10
- 230000000694 effects Effects 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 claims description 6
- 230000001070 adhesive effect Effects 0.000 claims description 6
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 6
- 229920003192 poly(bis maleimide) Polymers 0.000 claims description 6
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 claims description 5
- 229910052681 coesite Inorganic materials 0.000 claims description 4
- 229910052906 cristobalite Inorganic materials 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 229910052682 stishovite Inorganic materials 0.000 claims description 4
- 229910052905 tridymite Inorganic materials 0.000 claims description 4
- 229910011255 B2O3 Inorganic materials 0.000 claims description 3
- KKCBUQHMOMHUOY-UHFFFAOYSA-N Na2O Inorganic materials [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 claims description 3
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 2
- -1 L i2O Chemical compound 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 abstract description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 13
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 abstract 1
- 239000010408 film Substances 0.000 description 69
- 238000000034 method Methods 0.000 description 25
- 230000008569 process Effects 0.000 description 21
- 238000004544 sputter deposition Methods 0.000 description 12
- 239000000126 substance Substances 0.000 description 12
- 230000008020 evaporation Effects 0.000 description 11
- 238000001704 evaporation Methods 0.000 description 11
- 239000010409 thin film Substances 0.000 description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 238000002834 transmittance Methods 0.000 description 9
- 239000010949 copper Substances 0.000 description 8
- 239000010931 gold Substances 0.000 description 6
- 238000005245 sintering Methods 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 238000000605 extraction Methods 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910010293 ceramic material Inorganic materials 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- FUJCRWPEOMXPAD-UHFFFAOYSA-N Li2O Inorganic materials [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 2
- 230000006750 UV protection Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000001723 curing Methods 0.000 description 2
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical compound [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000004643 cyanate ester Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 229920006336 epoxy molding compound Polymers 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810972115.5A CN109148670B (zh) | 2016-08-30 | 2016-08-30 | Led倒装芯片封装基板和led封装结构 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810972115.5A CN109148670B (zh) | 2016-08-30 | 2016-08-30 | Led倒装芯片封装基板和led封装结构 |
CN201610771112.6A CN106299084B (zh) | 2016-08-30 | 2016-08-30 | Led封装结构 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610771112.6A Division CN106299084B (zh) | 2016-08-30 | 2016-08-30 | Led封装结构 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN109148670A CN109148670A (zh) | 2019-01-04 |
CN109148670B true CN109148670B (zh) | 2020-07-24 |
Family
ID=57675689
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610771112.6A Active CN106299084B (zh) | 2016-08-30 | 2016-08-30 | Led封装结构 |
CN201810972115.5A Active CN109148670B (zh) | 2016-08-30 | 2016-08-30 | Led倒装芯片封装基板和led封装结构 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610771112.6A Active CN106299084B (zh) | 2016-08-30 | 2016-08-30 | Led封装结构 |
Country Status (2)
Country | Link |
---|---|
US (1) | US10276753B2 (zh) |
CN (2) | CN106299084B (zh) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106920870B (zh) * | 2017-02-24 | 2023-05-16 | 广东工业大学 | 一种大功率紫外led芯片共晶焊倒装结构 |
CN107178714A (zh) * | 2017-06-08 | 2017-09-19 | 苏州晶品新材料股份有限公司 | 一种大功率多色贴片式led光源 |
US10497846B2 (en) * | 2017-07-11 | 2019-12-03 | Lg Innotek Co., Ltd. | Light emitting device package |
CN107783210A (zh) * | 2017-09-04 | 2018-03-09 | 厦门信达光电物联科技研究院有限公司 | 一种反射件及其膜系结构的制备方法和红外线led装置 |
CN107482101A (zh) * | 2017-09-18 | 2017-12-15 | 广东晶科电子股份有限公司 | 一种带有多杯支架的led封装器件及其制备方法 |
CN107623063B (zh) * | 2017-09-29 | 2020-05-05 | 开发晶照明(厦门)有限公司 | 封装支架和封装支架制备方法 |
CN108172676A (zh) * | 2018-01-25 | 2018-06-15 | 研创光电科技(赣州)有限公司 | 一种led陶瓷复合封装基板及其生产工艺 |
CN108417690B (zh) * | 2018-03-08 | 2019-06-25 | 上海大学 | 一种发光二极管 |
CN108321283A (zh) * | 2018-04-03 | 2018-07-24 | 江苏鸿利国泽光电科技有限公司 | 一种高光效紫外led的封装支架及其封装方法 |
CN109121332B (zh) * | 2018-08-17 | 2021-03-23 | Oppo广东移动通信有限公司 | 陶瓷件的表面处理方法、壳体组件、指纹模组和电子设备 |
CN111063810B (zh) * | 2018-10-16 | 2021-11-12 | 深圳光峰科技股份有限公司 | 发光装置及其制备方法 |
CN109378379B (zh) * | 2018-10-17 | 2020-04-17 | 厦门乾照光电股份有限公司 | 一种封装组件 |
CN109192842A (zh) * | 2018-10-29 | 2019-01-11 | 广州市香港科大霍英东研究院 | 一种紫外线发光二极管封装结构 |
CN109709722A (zh) * | 2019-03-12 | 2019-05-03 | 合肥京东方光电科技有限公司 | 直下式背光源及制备方法、背光模组以及显示装置 |
CN110164774A (zh) * | 2019-05-16 | 2019-08-23 | 深圳市兆驰节能照明股份有限公司 | 陶瓷基板组件及其制造方法 |
CN110133912A (zh) * | 2019-05-24 | 2019-08-16 | 佛山市国星光电股份有限公司 | 一种led背光器件及背光模组 |
CN110993767A (zh) * | 2019-08-22 | 2020-04-10 | 江苏欧密格光电科技股份有限公司 | Led支架和具有其的led组件 |
US11349048B2 (en) * | 2019-11-04 | 2022-05-31 | Harvatek Corporation | UV LED package structure for improving light extraction |
CN113133194B (zh) * | 2020-01-16 | 2022-08-09 | 庆鼎精密电子(淮安)有限公司 | 电路板及其制造方法、显示屏 |
CN111146092B (zh) * | 2020-01-16 | 2023-02-03 | 深圳市志金电子有限公司 | 封装基板制造工艺 |
CN112089862A (zh) * | 2020-10-20 | 2020-12-18 | 山西华微紫外半导体科技有限公司 | 一种紫外半导体并联的uvc led全无机或半无机封装结构 |
CN112968092A (zh) * | 2020-11-19 | 2021-06-15 | 重庆康佳光电技术研究院有限公司 | 发光器件、其制作方法及具有其的显示面板 |
CN113299814A (zh) * | 2021-05-20 | 2021-08-24 | 中国科学院半导体研究所 | Led陶瓷封装基板及其制备方法 |
CN113437109B (zh) * | 2021-08-30 | 2021-12-28 | 深圳市思坦科技有限公司 | 柔性led器件及其制造方法以及显示装置 |
CN113851574A (zh) * | 2021-09-24 | 2021-12-28 | 宁波升谱光电股份有限公司 | 一种led封装结构体及其制作方法 |
CN114335295B (zh) * | 2021-10-25 | 2024-09-10 | 华南理工大学 | 一种深紫外led芯片级封装器件及其制备方法 |
CN114171644A (zh) * | 2021-11-17 | 2022-03-11 | 广东索亮智慧科技有限公司 | 一种特殊应用超高密度纳米级导热全色域nk瓦级cob光源封装技术 |
CN118213363B (zh) * | 2024-05-22 | 2024-08-27 | 华引芯(武汉)科技有限公司 | 发光器件、灯板和显示装置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3335336A (en) * | 1962-06-04 | 1967-08-08 | Nippon Electric Co | Glass sealed ceramic housings for semiconductor devices |
TW200802963A (en) * | 2006-06-08 | 2008-01-01 | Hong Yuan Technology Co Ltd | Light emitting system, light emitting device and fabrication method thereof |
CN101930932A (zh) * | 2009-06-22 | 2010-12-29 | 国格金属科技股份有限公司 | Led发光模块制程方法 |
CN102447040A (zh) * | 2010-10-14 | 2012-05-09 | 展晶科技(深圳)有限公司 | 发光二极管封装结构及其制造方法 |
CN203071136U (zh) * | 2012-12-27 | 2013-07-17 | 江阴长电先进封装有限公司 | 一种圆片级led封装结构 |
CN103403892A (zh) * | 2011-03-31 | 2013-11-20 | 松下电器产业株式会社 | 半导体发光装置 |
Family Cites Families (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3971869A (en) * | 1973-03-05 | 1976-07-27 | Optical Coating Laboratory, Inc. | Liquid crystal display device and method |
US20020017652A1 (en) * | 2000-08-08 | 2002-02-14 | Stefan Illek | Semiconductor chip for optoelectronics |
BRPI0616524A2 (pt) * | 2005-08-12 | 2011-06-21 | Afl Telecommunications Llc | cabo de distribuição de fibras ópticas afunilado e método para a produção de um cabo de distribuição de fibras ópticas afunilado |
JP2010532104A (ja) * | 2007-06-27 | 2010-09-30 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 高効率白色発光ダイオードのための光学設計 |
JP2009135466A (ja) * | 2007-10-29 | 2009-06-18 | Mitsubishi Chemicals Corp | 半導体発光素子およびその製造方法 |
US8443033B2 (en) * | 2008-08-04 | 2013-05-14 | Lsi Corporation | Variable node processing unit |
US7989853B2 (en) * | 2008-08-07 | 2011-08-02 | Texas Instruments Incorporated | Integration of high voltage JFET in linear bipolar CMOS process |
JP4724222B2 (ja) * | 2008-12-12 | 2011-07-13 | 株式会社東芝 | 発光装置の製造方法 |
US8281395B2 (en) * | 2009-01-07 | 2012-10-02 | Micron Technology, Inc. | Pattern-recognition processor with matching-data reporting module |
US8104274B2 (en) * | 2009-06-04 | 2012-01-31 | Sustainx, Inc. | Increased power in compressed-gas energy storage and recovery |
JP5418592B2 (ja) * | 2009-06-22 | 2014-02-19 | 日亜化学工業株式会社 | 発光装置 |
TWI447893B (en) * | 2009-06-24 | 2014-08-01 | Led package structure for increasing light-emitting efficiency and controlling light-projecting angle and method for manufacturing the same | |
JPWO2011016201A1 (ja) * | 2009-08-06 | 2013-01-10 | パナソニック株式会社 | 発光素子および発光装置 |
JP5775002B2 (ja) * | 2010-01-29 | 2015-09-09 | シチズン電子株式会社 | 発光装置の製造方法 |
WO2011125211A1 (ja) * | 2010-04-08 | 2011-10-13 | 株式会社 東芝 | 画像符号化方法及び画像復号化方法 |
DE102010028776A1 (de) * | 2010-05-07 | 2011-11-10 | Osram Gesellschaft mit beschränkter Haftung | Optoelektronisches Halbleiterbauelement |
JP5451534B2 (ja) * | 2010-06-07 | 2014-03-26 | 株式会社東芝 | 半導体発光装置および半導体発光装置の製造方法 |
US8839782B2 (en) * | 2010-07-14 | 2014-09-23 | Judy Hess | Warming carrier |
US8560203B2 (en) * | 2010-07-30 | 2013-10-15 | Pratt & Whitney Canada Corp. | Aircraft engine control during icing of temperature probe |
TWI412163B (zh) | 2010-10-18 | 2013-10-11 | Advanced Optoelectronic Tech | 發光二極體封裝結構及其製造方法 |
WO2012157644A1 (ja) * | 2011-05-16 | 2012-11-22 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
US20130069091A1 (en) * | 2011-09-20 | 2013-03-21 | Taiwan Micropaq Corporation | Progressive-refractivity antireflection layer and method for fabricating the same |
KR102058512B1 (ko) * | 2012-07-26 | 2019-12-23 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 열 접합해제성 광학 물품 |
US9029905B2 (en) * | 2012-12-21 | 2015-05-12 | Lite-On Opto Technology (Changzhou) Co., Ltd. | Light emitting diode device |
KR102008315B1 (ko) * | 2013-01-23 | 2019-10-21 | 삼성전자주식회사 | 발광 소자 패키지 |
KR20150010871A (ko) * | 2013-07-19 | 2015-01-29 | 삼성전자주식회사 | 전력 제어 장치 및 이를 구비하는 화상 형성 장치 |
US9461209B2 (en) * | 2013-11-27 | 2016-10-04 | Epistar Corporation | Semiconductor light-emitting device |
WO2015119858A1 (en) * | 2014-02-05 | 2015-08-13 | Cooledge Lighting Inc. | Light-emitting dies incorporating wavelength-conversion materials and related methods |
US20150280078A1 (en) * | 2014-03-31 | 2015-10-01 | SemiLEDs Optoelectronics Co., Ltd. | White flip chip light emitting diode (fc led) and fabrication method |
TW201605073A (zh) | 2014-05-14 | 2016-02-01 | 新世紀光電股份有限公司 | 發光元件封裝結構及其製作方法 |
US9502614B2 (en) | 2014-06-04 | 2016-11-22 | Formosa Epitaxy Incorporation | Light emitting diode chip, light emitting device, and wafer-level structure of light emitting diode |
CN105006508B (zh) * | 2015-07-02 | 2017-07-25 | 厦门市三安光电科技有限公司 | 发光二极管封装结构 |
CN105047793B (zh) * | 2015-08-20 | 2018-07-06 | 厦门市三安光电科技有限公司 | 发光二极管封装结构的制作方法 |
-
2016
- 2016-08-30 CN CN201610771112.6A patent/CN106299084B/zh active Active
- 2016-08-30 CN CN201810972115.5A patent/CN109148670B/zh active Active
-
2017
- 2017-06-08 US US15/617,359 patent/US10276753B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3335336A (en) * | 1962-06-04 | 1967-08-08 | Nippon Electric Co | Glass sealed ceramic housings for semiconductor devices |
TW200802963A (en) * | 2006-06-08 | 2008-01-01 | Hong Yuan Technology Co Ltd | Light emitting system, light emitting device and fabrication method thereof |
CN101930932A (zh) * | 2009-06-22 | 2010-12-29 | 国格金属科技股份有限公司 | Led发光模块制程方法 |
CN102447040A (zh) * | 2010-10-14 | 2012-05-09 | 展晶科技(深圳)有限公司 | 发光二极管封装结构及其制造方法 |
CN103403892A (zh) * | 2011-03-31 | 2013-11-20 | 松下电器产业株式会社 | 半导体发光装置 |
CN203071136U (zh) * | 2012-12-27 | 2013-07-17 | 江阴长电先进封装有限公司 | 一种圆片级led封装结构 |
Also Published As
Publication number | Publication date |
---|---|
CN109148670A (zh) | 2019-01-04 |
CN106299084A (zh) | 2017-01-04 |
CN106299084B (zh) | 2018-10-16 |
US10276753B2 (en) | 2019-04-30 |
US20180062048A1 (en) | 2018-03-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN109148670B (zh) | Led倒装芯片封装基板和led封装结构 | |
KR102023764B1 (ko) | 광전자 소자 및 그 제조방법 | |
TW543128B (en) | Surface mounted and flip chip type LED package | |
JP5750040B2 (ja) | オプトエレクトロニクス半導体コンポーネント | |
CN111837298A (zh) | 构件装置、封装体和封装体装置以及用于制造的方法 | |
TWI495164B (zh) | 發光裝置 | |
CN102549785B (zh) | 发光装置 | |
JP5610156B2 (ja) | 光電変換モジュール及び光電変換モジュールの製造方法 | |
WO2013168802A1 (ja) | Ledモジュール | |
TW200522395A (en) | Power surface mount light emitting die package | |
JP2006344978A (ja) | Ledパッケージ及びその製造方法、並びにそれを利用したledアレイモジュール | |
TW200926445A (en) | Fabricating method of photoelectric device and packaging structure thereof | |
TW201208152A (en) | Surface-mountable optoelectronic component and method of manufacturing a surface-mountable optoelectronic component | |
JPS584470B2 (ja) | ヒカリケツゴウハンドウタイソウチ オヨビ ソノセイホウ | |
JP4590994B2 (ja) | 発光装置およびその製造方法 | |
TW201334165A (zh) | 光感測器裝置 | |
JP2015029043A (ja) | 電子装置および光モジュール | |
JP2022186944A (ja) | 電子部品パッケージおよび電子装置 | |
CN107123721B (zh) | 一种带透镜式led封装结构及封装方法 | |
TWI597867B (zh) | Led倒裝晶片封裝基板和led封裝結構 | |
US20130307005A1 (en) | Low Cost Surface Mount Packaging Structure for Semiconductor Optical Device and Packaging Method Therefor | |
JP7209427B2 (ja) | 光学装置用パッケージおよび光学装置 | |
JP4367299B2 (ja) | 発光素子デバイス及び発光素子デバイスの製造方法 | |
TW201140894A (en) | Package of light emitting device and fabrication thereof | |
JP2002124661A (ja) | 半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP03 | Change of name, title or address |
Address after: No. 101, 103, 105, 107, 109, 111, 113, 115, Xiangxing Road, industrial zone, torch hi tech Zone (Xiang'an), Xiamen City, Fujian Province, 361101 Patentee after: Purui Optoelectronics (Xiamen) Co.,Ltd. Country or region after: China Address before: No. 101, 103, 105, 107, 109, 111, 113, 115, Xiangxing Road, industrial zone, torch hi tech Zone (Xiang'an), Xiamen City, Fujian Province, 361101 Patentee before: KAISTAR LIGHTING (XIAMEN) Co.,Ltd. Country or region before: China |
|
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: 361101 No. 101, Xiang Xing Road, Torch Industrial Park (Xiangan) Industrial Zone, Xiamen, Fujian Patentee after: Purui Optoelectronics (Xiamen) Co.,Ltd. Country or region after: China Address before: No. 101, 103, 105, 107, 109, 111, 113, 115, Xiangxing Road, industrial zone, torch hi tech Zone (Xiang'an), Xiamen City, Fujian Province, 361101 Patentee before: Purui Optoelectronics (Xiamen) Co.,Ltd. Country or region before: China |
|
CP03 | Change of name, title or address |