CN109103117A - 结合半导体芯片的设备和结合半导体芯片的方法 - Google Patents

结合半导体芯片的设备和结合半导体芯片的方法 Download PDF

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CN109103117A
CN109103117A CN201810621365.4A CN201810621365A CN109103117A CN 109103117 A CN109103117 A CN 109103117A CN 201810621365 A CN201810621365 A CN 201810621365A CN 109103117 A CN109103117 A CN 109103117A
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semiconductor chip
substrate
chip
fixation member
pressing component
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CN109103117B (zh
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安根植
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Protec Co Ltd Korea
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Protec Co Ltd Korea
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  • Engineering & Computer Science (AREA)
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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  • Wire Bonding (AREA)

Abstract

本发明提供一种半导体芯片结合设备和一种半导体芯片结合方法，且更明确地说提供将半导体芯片结合到衬底的上表面或另一半导体芯片的设备和方法。根据半导体芯片结合设备和半导体芯片结合方法，可通过将半导体芯片快速且精确地结合到衬底或另一半导体芯片来增加产率。

Description

结合半导体芯片的设备和结合半导体芯片的方法
技术领域
一个或多个实施例涉及半导体芯片结合设备和半导体芯片结合方法，且更明确地说涉及将半导体芯片结合到衬底的上表面或另一半导体芯片的设备和方法。
背景技术
随着电子产品变得紧凑，广泛地使用未使用引线键合的呈倒装芯片形式的半导体芯片。如上呈倒装芯片形式的半导体芯片包含在半导体芯片的下表面上呈焊料凸块形式的多个电极，且通过将电极结合到对应于也形成在衬底上的焊料凸块的位置的位置来将半导体芯片结合到衬底。另外，就穿硅通孔(through silicon via；TSV)形式的半导体芯片而言，半导体芯片堆叠在另一半导体芯片上(叠层芯片(chip-on-chip))以结合上部半导体芯片和下部半导体芯片的焊料凸块。
作为将薄半导体芯片结合到衬底或另一半导体芯片的方法，根据现有技术使用热压力接合(thermal compression bonding；TCB)方法。在TCB方法中，包含加热半导体芯片的加热器的结合头用于吸附半导体芯片的上表面以由此将半导体芯片放置在衬底上，且随后加热半导体芯片同时对半导体芯片加压。当加热半导体芯片时，随着半导体芯片或衬底上的焊料凸块熔融而执行结合。在通过使用结合头将半导体芯片加热到至多熔融焊料凸块的温度之后，半导体芯片需要通过使用结合头保持在加压状态直到焊料凸块再次硬化为止。在这里，停止结合头的加热器的操作以降低半导体芯片的温度。
如上文所描述，半导体芯片在TCB方法中在加热和冷却半导体芯片期间必须通过使用结合头保持在加压状态，且因此其操作时间较长。另外，因为热传导方法用于通过使用结合头来加热半导体芯片，所以花费相对较长时间段来再次加热半导体芯片并冷却半导体芯片。一般来说，通过使用TCB方法花费数十或更多秒来结合半导体芯片。
此外，由于半导体芯片加热的时间相对较长，半导体芯片也受损坏。
发明内容
一个或多个实施例包含半导体芯片结合设备和半导体芯片结合方法，其中半导体芯片可快速且稳定地结合到衬底或另一半导体芯片。
额外方面将部分地阐述于以下描述中，并且部分地将从所述描述中显而易见，或可通过对所呈现实施例的实践而习得。
根据本公开的一个或多个实施例，半导体芯片结合设备包含：固定部件，用以固定多个芯片-衬底组件的下表面，在所述芯片-衬底组件中，非导电树脂层和半导体芯片依序堆叠在衬底上；按压部件，布置在固定部件上方，按压部件包含激光束穿透的透明部分；提升部件，用以相对于固定部件和按压部件中的一个提升或降低固定部件和按压部件中的另一个，以对多个芯片-衬底组件的半导体芯片加压，使得半导体芯片和衬底中的一个的焊料凸块穿透非导电树脂层，以电接触半导体芯片和衬底中的另一个；以及激光头，用以通过按压部件的透明部分将激光束照射到通过使用按压部件加压的芯片-衬底组件，以便将半导体芯片和衬底中的一个的焊料凸块结合到半导体芯片和衬底中的另一个。
根据本公开的一个或多个实施例，半导体芯片结合方法包含：(a)在半导体芯片的下表面和衬底的上表面中的一个上形成非导电树脂层；(b)将半导体芯片安置在衬底上以提供多个芯片-衬底组件，在所述芯片-衬底组件中，衬底、非导电树脂层以及半导体芯片依序堆叠；(c)通过由将多个芯片-衬底组件安置在固定部件上来使用固定部件而固定多个芯片-衬底组件；(d)通过使用提升部件而使得按压部件和固定部件中的一个靠近按压部件和固定部件中的另一个，使得半导体芯片和衬底中的一个的焊料凸块穿透非导电树脂层以与半导体芯片和衬底中的另一个电接触，其中按压部件安置在固定部件上方且包含激光束穿透的透明部分；以及(e)通过由使用激光头将激光束穿过按压部件的透明部分而照射到按压部件与固定部件之间的芯片-衬底组件来将半导体芯片和衬底中的一个的焊料凸块结合到半导体芯片和衬底中的另一个。
附图说明
通过结合附图对实施例进行的以下描述，这些和/或其它方面将变得显而易见并且更加容易了解。
图1是根据本公开的实施例的半导体芯片结合设备的概念图。
图2是图1中所示的半导体芯片结合设备的按压部件的平面图。
图3和图4示出通过使用图1中所示的半导体芯片结合设备结合的芯片-衬底组件的实例。
图5和图6分别示出通过使用图1中所示的半导体芯片结合设备结合的芯片-衬底组件的其它实例。
附图标号说明
10、60、70：芯片-衬底组件；
11、61：衬底；
12、62、72：非导电树脂层；
13、63、71、73：半导体芯片；
100：固定部件；
111、131、611、631、711、731：焊料凸块；
200：按压部件；
210：透明部分；
220：掩模部分；
300：提升部件；
400：激光头；
500：头部传送部件。
具体实施方式
下文中，将参看附图来详细描述根据本公开的实施例的半导体芯片结合设备。
图1是根据本公开的实施例的半导体芯片结合设备的概念图，且图2是图1中所示的半导体芯片结合设备的按压部件200的平面图。图3示出通过使用图1中所示的半导体芯片结合设备结合的芯片-衬底组件10的实例。
根据本实施例的半导体芯片结合设备为用于通过使用激光束将半导体芯片13结合到衬底11或通过将半导体芯片13堆叠在彼此的顶部上来结合穿硅通孔(TSV)形式制造的半导体芯片13的设备。在下文中，首先，将描述半导体芯片13结合到衬底11的实例。
焊料凸块111和焊料凸块131分别形成在衬底11和半导体芯片13上，且随着焊料凸块111和焊料凸块131受由激光束传递的能量而立即熔融且随后硬化，半导体芯片13结合到衬底11。在这里，非导电树脂层12和半导体芯片13如图3中所示依序堆叠在衬底11上。也就是说，非导电树脂层12安置在衬底11与半导体芯片13之间。非导电树脂层12可以是非导电膜(non-conductive film；NCF)或非导电膏(non-conductive paste NCP)。当使用NCF时，半导体芯片13堆叠在衬底11上而NCF附接到衬底11的上表面或半导体芯片13的下表面。当使用NCP时，将NCP涂布在衬底11的上表面上，且随后将半导体芯片13堆叠在衬底11上。在本实施例中，形成附接到半导体芯片13的下表面的呈NCF形式的非导电树脂层12的芯片-衬底组件10将描述为实例。
参考图1和图2，根据本实施例的半导体芯片结合设备包含固定部件100、按压部件200、提升部件300以及激光头400。
固定部件100为用于固定多个芯片-衬底组件10的下表面的设备。在本实施例中，在多个芯片-衬底组件10的衬底11彼此连接的芯片-衬底组件10上执行的结合操作将描述为实例。
根据本实施例的固定部件100通过由使用真空吸附方法而支撑衬底11的下表面来固定衬底11。将根据衬底11的焊料凸块111所形成的位置而将半导体芯片13布置在非导电树脂层12上的芯片-衬底组件10供应到固定部件100且通过吸附固定。由于非导电树脂层12的粘性或粘着特性，半导体芯片13临时粘着到衬底11。除非施加相对大量的振动或相对较大外力，否则安置在衬底11上的半导体芯片13不会受非导电树脂层12的作用摇晃而是保持在其位置中。
按压部件200安置在固定部件100上方。参考图2，按压部件200包含透明部分210和掩模部分220。透明部分210可由激光束穿透的透明材料形成。广泛地用于传输激光束的石英可用作透明部分210的材料。掩模部分220可由激光束无法穿透的不透光材料形成。掩模部分220用以支撑透明部分210。参考图3，透明部分210以一对一方式布置在区域中以分别对应于芯片-衬底组件10的半导体芯片13，其中芯片-衬底组件10通过使用固定部件100固定在透明部分210下面。
掩模部分220用以平面地支撑透明部分210。另外，掩模部分220由不透光材料形成。掩模部分220安置在芯片-衬底组件10之间的对应区域中。掩模部分220防止激光束穿过除透明部分210外的区域。透明部分210的下表面是平面。当通过使用按压部件200经由操作提升部件300来按压芯片-衬底组件10的半导体芯片13时(其将稍后描述)，半导体芯片13经由具有扁平下表面的透明部分210均一且平面地加压。
提升部件300执行将固定部件100上下垂直提升的功能。当芯片-衬底组件10的衬底11通过固定部件100吸附且固定到所述固定部件100时，提升部件300将固定部件100向上提升以将固定部件100紧密地接触按压部件200，由此对芯片-衬底组件10的半导体芯片13加压。当提升部件300抵靠按压部件200对固定部件100加压时，半导体芯片13的焊料凸块131以及衬底11的焊料凸块111穿透非导电树脂层12以彼此电接触。
激光头400安置在按压部件200上方。激光头400产生激光束并将激光束通过按压部件200的透明部分210传输到按压部件200的透明部分210下方的半导体芯片13。随着衬底11的焊料凸块111以及半导体芯片13的焊料凸块131受由激光束传递的能量而立即熔融，半导体芯片13结合到衬底11。
激光头400安装在头部传送部件500上。头部传送部件500在水平方向上传送激光头400。从按压部件200上方，激光头400可同时将激光束传输到多个透明部分210或可将激光束依序照射到透明部分210中的每一个。头部传送部件500可将激光头400传送到激光束待照射的位置。
在下文中，将描述用于通过使用如上文所描述配置的根据本实施例的半导体芯片结合设备来将半导体芯片13结合到衬底11的半导体芯片结合方法。
首先，将NCF附接到半导体芯片13的下表面以形成非导电树脂层12(步骤(a))。如上文所描述，也可将NCF附接到衬底11的上表面。在本实施例中，将描述如图3中所示通过将NCF附接到半导体芯片13的下表面形成非导电树脂层12的实例。
通过将每一个具有非导电树脂层12附接到下表面的半导体芯片13安置在衬底11上，提供衬底11、非导电树脂层12以及半导体芯片13依序堆叠的多个芯片-衬底组件10(步骤(b))。参考图1，示出通过将多个非导电树脂层12和多个半导体芯片13堆叠在一个衬底11上而提供的多个芯片-衬底组件10。图3示出多个芯片-衬底组件10中的一个的放大截面视图。在这里，衬底11的焊料凸块111以及半导体芯片13的焊料凸块131布置在对应于彼此的位置处以面朝彼此。由于非导电树脂层12的粘着力，半导体芯片13临时附接到衬底11的上表面。
在完成步骤(b)之后，多个芯片-衬底组件10如图1和图3中所示布置在固定部件100上，以通过使用固定部件100来固定衬底11的下表面(步骤(c))。固定部件100通过使用真空吸附方法吸附衬底11的下表面来固定芯片-衬底组件10。
当将芯片-衬底组件10固定到固定部件100时，固定部件100通过使用提升部件300向上提升，以使半导体芯片13靠近按压部件200，由此抵靠衬底11对芯片-衬底组件10加压(步骤(d))。根据提升部件300的操作，半导体芯片13和衬底11中的一个的焊料凸块111或焊料凸块131穿透非导电树脂层12，以便电接触半导体芯片13和衬底11中的另一个。根据本实施例，半导体芯片13的焊料凸块131以及衬底11的焊料凸块111如图4中所示分别穿透非导电树脂层12彼此接触。因此，半导体芯片13的焊料凸块131以及衬底11的焊料凸块111彼此电连接。另外，半导体芯片13的焊料凸块131经由非导电树脂层12彼此电绝缘，且衬底11的焊料凸块111也经由非导电树脂层12彼此电绝缘。非导电树脂层12执行消散产生于半导体芯片13的热的功能以及减少可施加到半导体芯片13和衬底11的冲击力的功能。
在这种状态下，激光头400照射激光束以将半导体芯片13的焊料凸块131与衬底11的焊料凸块111彼此结合(步骤(e))。从激光头400照射的激光束经由按压部件200的透明部分210传输到芯片-衬底组件10。随着衬底11的焊料凸块111以及半导体芯片13的焊料凸块131受由激光束传递的能量而立即熔融且随后硬化，半导体芯片13如图4中所示结合到衬底11。当可能根据半导体芯片13或衬底11的瞬时温度升高(由于激光束)而发生热变形时，由于按压部件200的透明部分210将半导体芯片13向下按压，因此半导体芯片13稳定地结合到衬底11，同时防止半导体芯片13由于热变形而变形或弯曲。根据这个方法，可防止焊料凸块111和焊料凸块131的结合失效。另外，根据本实施例的半导体芯片结合设备和半导体芯片结合方法，不同于根据现有技术的使用通过使用加热块执行的热传导方法加热半导体芯片的方法，使用激光束以加热半导体芯片13和焊料凸块111以及焊料凸块131，且因此，芯片-衬底组件10的结合操作可在极短时间段内执行。另外，由于使用激光束的直接能量传递方法而非使用热传导方法，所以与热传导方法相比，焊料凸块111和焊料凸块131的温度可以明显更快速升高，且焊料凸块111和焊料凸块131的温度可通过停止激光束的照射而极快速地降低。通过使用上文所描述的方法，根据用于本公开的结合半导体芯片的设备和方法，半导体芯片的结合操作可比现有技术的方法快几十倍地执行。另外，半导体芯片13仅加热极短时段，且因此可防止由于加热而损坏半导体芯片13。
如上文所描述，按压部件200包含透明部分210和掩模部分220，且激光束仅穿透透明部分210。因此，从激光头400照射的激光束穿过按压部件200的透明部分210且仅传输到安置在透明部分210之下的芯片-衬底组件10。通过使用如上文所描述的包含透明部分210和掩模部分220的按压部件200，可防止激光束照射到衬底11无需受激光束能量的传递的部分上。
另外，还可执行步骤(e)以使得多个芯片-衬底组件10通过使用如上文所描述的按压部件200同时结合到衬底11。通过操作激光头400来增大激光束的照射区域，激光束可同时照射在两个或多于两个芯片-衬底组件10上。由于按压部件200的掩模部分220防止激光束穿过除对应于如上文所描述的芯片-衬底组件10的半导体芯片13的区域外的区域，所以即使当激光束照射在相对广泛区域上时，激光束的能量仍可仅传递到待结合的半导体芯片13。通过使用上文所描述的方法将多个半导体芯片13同时结合到与衬底11，可改良总过程产率。视情况而定，可执行步骤(e)以使得通过使用按压部件200加压的所有芯片-衬底组件10通过将激光束照射到如图2中所示的整个按压部件200而同时结合到衬底11。
另外，视情况而定，可通过由使用上文所描述的头部传送部件500而传送激光头400来执行步骤(e)。可执行步骤(e)以使得每一半导体芯片13通过使用头部传送部件500来传送激光头400而同时依序结合到衬底11。类似地，步骤(e)可通过将两个芯片-衬底组件10的半导体芯片13同时结合到衬底11或通过将激光束照射到一排芯片-衬底组件10的半导体芯片13来执行。
如上文所描述，当通过使用按压部件200同时加压多个芯片-衬底组件10时，仅激光束待照射的区域可通过增大或减小激光束照射区域来修改，且因此，根据本公开的半导体芯片结合设备和半导体芯片结合方法，可快速执行芯片-衬底组件10的结合操作。
同时，即使在未使用头部传送部件500时，仍可在一个或多个芯片-衬底组件10上依序执行结合操作。即便固定激光头400，但当激光束照射的位置和区域配置成根据激光头400的内部操作进行光学调节时，步骤(e)仍可通过使用包含呈固定状态的激光头400的半导体芯片结合设备来将激光束依序照射到芯片-衬底组件10来执行。
尽管已参看优选实施例来描述本公开，但本公开的范围并不限于上文所描述和所示出的结构。
举例来说，虽然上文描述将呈NCF形式的非导电树脂层12附接到半导体芯片13的下表面且随后堆叠在衬底11上，但是视情况而定，步骤(a)和步骤(b)还可通过将NCF附接在衬底上且随后将半导体芯片安置在NCF上来执行。
另外，步骤(a)可通过用如上文所描述的呈NCP形式的非导电树脂层涂布衬底来执行。图5为示出一操作的截面视图，在所述操作中，芯片-衬底组件60通过将非导电膏作为非导电树脂层62涂布衬底61且随后将半导体芯片63堆叠于其上来完成，且芯片-衬底组件60通过使用固定部件100固定，且固定部件100通过使用提升部件300向上提升。在这种状态下，衬底61的焊料凸块611以及半导体芯片63的焊料凸块631通过使用激光束来结合。
另外，虽然其中焊料凸块111和焊料凸块131分别形成在半导体芯片13的下表面以及衬底11的上表面上的芯片-衬底组件10已描述为实例，但是本公开的半导体芯片结合设备和半导体芯片结合方法还可应用到其中焊料凸块仅形成在半导体芯片上或仅形成在衬底上且对应于焊料凸块的电极形成在半导体芯片和衬底中的另一个上的芯片-衬底组件。在这种情况下，焊料凸块穿透非导电树脂层到待结合的对应电极。
另外，虽然上文参看图3到图5描述半导体芯片13和半导体芯片63堆叠在待结合的呈印刷电路板(printed circuit board；PCB)或柔性印刷电路板(flexible printedcircuit board；FPCB)形式的衬底11和衬底61上的实例，但是还可使用根据本公开的半导体芯片结合设备和方法来将制造为穿硅通孔(TSV)的半导体芯片71和半导体芯片73堆叠在彼此上且将邻近半导体芯片71和邻近半导体芯片73结合到彼此。在这种情况下，如图6中所示，最上位置处的半导体芯片73对应于上文所描述的芯片-衬底组件10的半导体芯片13，且上述半导体芯片73和衬底下面的半导体芯片的组件对应于上文所描述的芯片-衬底组件10的衬底11。同时，焊料凸块711和焊料凸块731通过使用激光束结合到彼此，同时对芯片-衬底组件70加压，使得焊料凸块711和焊料凸块731穿透非导电树脂层72以彼此接触。
另外，虽然上文描述提升部件300提升或降低固定部件100，但是半导体芯片结合设备还可配置成使得提升部件提升或降低按压部件。在这种情况下，执行步骤(d)以使得在将衬底固定到固定部件时，提升部件降低按压部件以抵靠衬底对半导体芯片加压。
另外，虽然上文描述所有芯片-衬底组件10通过将激光束同时或依序照射于其上而结合同时所有芯片-衬底组件10通过使用提升部件300来提升固定部件100而同时加压，但是半导体芯片结合设备还可配置成使得芯片-衬底组件分组为多个组且通过使用按压部件来依序加压并随后通过使用激光头来结合。在这种情况下，根据本公开的半导体芯片结合设备还包含水平传送固定部件的固定单元传送部件。根据如上文所描述配置的半导体芯片结合设备，半导体芯片通过以下结合到衬底：通过使用固定单元传送部件来在水平方向上重复执行依序传送固定部件；通过使用提升部件来提升固定部件以对待结合的半导体芯片的组中的一些加压；通过使用按压部件；以及随后降低固定部件。
另外，虽然上文将按压部件200描述为包含透明部分210和掩模部分220，但还可使用不具有掩模部分的按压部件。在这种情况下，按压部件的整个主要部分可由透明部分形成且用于对多个芯片-衬底组件加压，且可将激光束照射到所有多个芯片-衬底组件。
根据本公开的半导体芯片结合设备和半导体芯片结合方法，半导体芯片可快速且精确地结合到衬底或另一半导体芯片，由此提高产率。
应理解，应仅按描述性意义且非出于限制的目的来考虑本文中所描述的实施例。每一个实施例内的特征或方面的描述通常应认为是可用于其它实施例中的其它类似特征或方面。
虽然已参看附图描述一个或多个实施例，但本领域的一般技术人员应理解，可在不脱离所附权利要求所界定的发明概念的精神和范围的情况下对实施例在形式和细节上进行各种改变。

Claims (11)

1.一种半导体芯片结合设备，其特征在于，包括：
固定部件，用以固定多个芯片-衬底组件的下表面，在所述芯片-衬底组件中，非导电树脂层以及半导体芯片依序堆叠在衬底上；
按压部件，布置在所述固定部件上方，所述按压部件包括激光束穿透的透明部分；
提升部件，用以相对于所述固定部件以及所述按压部件中的一个提升或降低所述固定部件以及所述按压部件中的另一个，以对所述多个芯片-衬底组件的所述半导体芯片加压，使得所述半导体芯片以及所述衬底中的一个的焊料凸块穿透所述非导电树脂层，以电接触所述半导体芯片以及所述衬底中的另一个；以及
激光头，用以通过所述按压部件的所述透明部分将所述激光束照射到通过使用所述按压部件加压的所述芯片-衬底组件，以便将所述半导体芯片以及所述衬底中的一个的焊料凸块结合到所述半导体芯片以及所述衬底中的另一个。
2.根据权利要求1所述的半导体芯片结合设备，其中所述按压部件还包括掩模部分，所述掩模部分由不透光材料形成且支撑所述透明部分，
其中所述按压部件的所述透明部分安置在分别对应于所述多个芯片-衬底组件的区域中，
其中所述掩模部分安置在所述多个芯片-衬底组件之间的对应区域。
3.根据权利要求2所述的半导体芯片结合设备，其中所述激光头将激光束依序照射到所述多个芯片-衬底组件中的每一个。
4.根据权利要求2所述的半导体芯片结合设备，其中所述激光头将激光束同时照射到所述多个芯片-衬底组件中的至少两个。
5.根据权利要求3所述的半导体芯片结合设备，还包括用以传送所述激光头的头部传送部件。
6.一种半导体芯片结合方法，其特征在于，包括：
步骤a，在半导体芯片的下表面以及衬底的上表面中的一个上形成非导电树脂层；
步骤b，将所述半导体芯片安置在所述衬底上以提供多个芯片-衬底组件，在所述芯片-衬底组件中，所述衬底、所述非导电树脂层以及所述半导体芯片依序堆叠；
步骤c，通过将所述多个芯片-衬底组件安置在固定部件上来使用所述固定部件而固定所述多个芯片-衬底组件；
步骤d，通过使用提升部件而使得按压部件以及所述固定部件中的一个靠近所述按压部件以及所述固定部件中的另一个，使得所述半导体芯片以及所述衬底中的一个的焊料凸块穿透所述非导电树脂层以与所述半导体芯片以及所述衬底中的另一个电接触，其中所述按压部件安置在所述固定部件上方且包括激光束穿透的透明部分；以及
步骤e，通过由使用激光头将激光束穿过所述按压部件的所述透明部分而照射到所述按压部件与所述固定部件之间的所述芯片-衬底组件来将所述半导体芯片以及所述衬底中的一个的焊料凸块结合到所述半导体芯片以及所述衬底中的另一个。
7.根据权利要求6所述的半导体芯片结合方法，其中步骤d通过使用包括所述透明部分以及掩模部分的所述按压部件来执行，所述透明部分安置在分别对应于所述多个芯片-衬底组件的区域中，且所述掩模部分安置在所述多个芯片-衬底组件之间的对应区域，所述掩模部分由不透光材料形成且支撑所述透明部分。
8.根据权利要求7所述的半导体芯片结合方法，其中步骤e通过将激光束通过使用所述激光头依序照射到所述芯片-衬底组件中的每一个来执行。
9.根据权利要求7所述的半导体芯片结合方法，其中步骤e通过由使用所述激光头而将激光束同时照射到所述芯片-衬底组件中的至少两个来执行。
10.根据权利要求6所述的半导体芯片结合方法，其中步骤a通过将所述非导电树脂层堆叠在所述衬底的所述上表面上同时使所述衬底固定到所述固定部件来执行，以及
其中步骤b通过在完成步骤a之后将多个半导体芯片中的每一个安置在所述衬底上的所述非导电树脂层上来执行，以及
其中步骤c通过执行步骤a以及步骤b来完成。
11.根据权利要求6所述的半导体芯片结合方法，其中步骤a通过将所述非导电树脂层附接到所述半导体芯片的所述下表面来执行，以及
其中步骤b通过将所述非导电树脂层在步骤a中所附接的所述多个半导体芯片安置在所述衬底的所述上表面上同时使所述衬底固定到所述固定部件来执行，以及
其中步骤c通过执行步骤a以及步骤b来完成。
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