CN106104799A - 用于emib芯片互连的方法和过程 - Google Patents

用于emib芯片互连的方法和过程 Download PDF

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Publication number
CN106104799A
CN106104799A CN201480076417.4A CN201480076417A CN106104799A CN 106104799 A CN106104799 A CN 106104799A CN 201480076417 A CN201480076417 A CN 201480076417A CN 106104799 A CN106104799 A CN 106104799A
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Prior art keywords
solder
bond pad
package substrate
protrusion
film
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CN201480076417.4A
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CN106104799B (zh
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R·C·迪亚斯
M·杜贝
E·阿马甘
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Intel Corp
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Intel Corp
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Abstract

用于将集成电路(IC)附接到IC封装衬底的方法包括：在IC管芯的接合焊盘上形成焊料凸块，在IC封装衬底的接合焊盘上形成焊料润湿突出物，以及将IC管芯的焊料凸块接合到IC封装衬底的焊料润湿突出物。

Description

用于EMIB芯片互连的方法和过程
技术领域
实施例涉及集成电路的封装。一些实施例涉及封装集成电路的焊料接合。
背景技术
电子设备常常包括连接到子组件(例如衬底或母板)的集成电路(IC)。IC可以插入IC封装内以在它合并到更高级组件内之前形成第一级组件。第一级组件可以包括提供从一个或多个IC管芯的接触焊盘到IC封装的接触焊盘的电子连续性的第一级互连(FLI)。
随着电子系统设计变得更复杂，满足电子设备的期望尺寸约束是有挑战性的。一些制造包括在具有比被封装的IC管芯更细的间距的IC封装中的FLI。随着特征间隔减小，用于将IC管芯附接到IC封装的当前方法变得更有挑战性，并包括增大的风险。这可以导致封装过程的低产量。因此，存在对解决对IC的封装的间隔挑战而又提供鲁棒且有成本效益的设计的设备、系统和方法的需要。
附图说明
在不一定按比例绘制的附图中，在不同视图中，相似的附图标记可以描述相似的部件。具有不同的字母下标的相似附图标记可以代表相似部件的不同实例。附图通常通过示例但不是限制的方式示出在本文档中讨论的各种示例。
图1示出到IC封装衬底的IC附接的简化示例；
图2示出到IC封装衬底的IC附接的另一示例；
图3示出根据一些实施例的用于到IC封装衬底的IC附接的方法的示例的图；
图4示出根据一些实施例的到IC封装衬底的IC附接的又一示例；
图5示出根据一些实施例的到IC封装衬底的IC附接的又一示例；
图6示出根据一些实施例的IC和IC封装衬底的简化图示；
图7示出根据一些实施例的自动激光直接沉积台的示例的部分；
图8示出根据至少一个实施例的合并了至少一个IC附接和/或方法的电子设备的示例的方框图。
具体实施方式
将IC附接到管芯封装的常规方法包括在IC管芯上形成焊球或凸块(管芯上的焊料或SoD)，以及接着将焊球接合到IC封装的衬底的接合焊盘。当IC封装衬底的特征尺寸变得更细以适应更密集的封装时，可能出现问题。例如，多个IC管芯可以被包括在单个IC封装中，例如在处理器IC和存储器IC中。管芯之间的FLI的特征尺寸可能需要比个体IC管芯的特征尺寸更小。特征尺寸的失配可以导致在焊料凸块之间的桥接。
图1示出到IC封装衬底的IC附接的简化示例。具有附接到IC接合焊盘115的焊料凸块110的IC管芯105接合到具有衬底接合焊盘125的IC封装衬底120。IC管芯105被示为具有在IC接合焊盘115周围的晶圆级底部填充(WLUF 130)。焊料凸块被加热以便于接合。随着管芯作为芯片附接过程的部分而朝着IC封装衬底移动时，焊料凸块110可以接触以形成在相邻的IC接合焊盘115中的一个或两个与相邻的衬底接合焊盘125之间的未预期的电短路。
图2示出到IC封装衬底的IC附接的另一示例。在这个示例中，IC封装衬底220包括使用焊料掩模245限定的衬底接合焊盘225(即焊料掩模限定或SMD)。附图示出在接合过程期间，熔化的焊料凸块仍然可以变平坦，且可以再一次接触以形成未预期的电短路。避免焊料凸块之间的桥接的一种方法是允许熔化的焊料凸块接触并弄湿放置在封装衬底接合焊盘上的材料。
图3示出到IC封装衬底的IC附接的方法300的示例的图。在305，焊料凸块在IC管芯的接合焊盘上形成。焊料凸块可以是例如SoD焊球、球栅阵列或BGA接触部或受控塌陷芯片连接(C4)焊料凸块。焊料凸块可以被添加在自动焊料凸起台处。可以使用放置在一个或多个IC管芯之上的焊料掩模并将焊料施加到焊料掩模以形成焊料凸块来添加焊料凸块。在310，焊料润湿突出物形成在IC封装衬底的接合焊盘上。
图4示出具有焊料润湿突出物的接合焊盘的示例。在附图中示出IC管芯405和IC封装衬底420。IC封装衬底包括很多衬底接合焊盘425，且接合焊盘包括用于电连接到IC管芯405的表面。IC管芯405可以包括处理器和存储器中的一个或多个。为了简单起见在附图中只示出两个接合焊盘。在示例中所示的两个衬底接合焊盘425包括焊料润湿材料的突出物430。焊料润湿指附接到IC的接合焊盘和IC封装衬底的熔化的焊料。焊料润湿材料可以包括钨、金、铜或银中的至少一个、或包括钨、金、铜或银中的至少一个的合金。在某些示例中，焊料润湿材料包括焊膏。
在图4的示例中，焊料位于IC管芯的IC接合焊盘415上。IC接合焊盘415可以被加热以提供熔化的焊料。衬底接合焊盘425也可以在焊料润湿期间被加热。焊料润湿材料的突出物430延伸离开衬底接合焊盘425的表面。在示例中示出的突出物430具有子弹形形状，但突出物430可以具有其它形状，例如圆锥状形状或大体上圆锥状形状。具有大体上圆锥状形状的焊料润湿突出物可以包括基部和顶端，且基部的宽度可以大于顶端的宽度。这样的焊料润湿突出物430可以具有宽度为一百微米(100微米)或更小的基部。在其它示例中，焊料润湿突出物可以以是凸块或支柱。焊料润湿突出物的宽度一般小于IC封装衬底的接合焊盘的表面的宽度。
返回到图3，在315，IC管芯的焊料凸块接合到IC封装衬底的焊料润湿突出物。在图4的右边示出接合的示例性图示。IC管芯的焊料凸块410可以被加热以形成熔化的焊料凸块。IC管芯的焊料凸块410通过使熔化的焊料凸块与焊料润湿突出物接触来接合到焊料润湿突出物。当焊料凸块410的熔化的焊料与焊料润湿材料的突出物接触时，熔化的焊料可以朝向衬底接合焊盘吸入并可以改变形状。在发生焊料桥接之前，焊料凸块410使衬底接合焊盘425上的材料润湿。在IC和IC封装衬底之间的这个接合可以使用自动IC接合台来实现。在一些示例中，作为接合过程的部分，IC管芯的熔化的焊料凸块被压到IC封装衬底的焊料润湿突出物上。这种类型的接合可以使用将IC管芯接合到IC封装衬底的自动热压缩接合(TCB)台来实现。由于焊料凸块410与焊料润湿材料的突出物的接触，可以在冲压期间防止在压扁的焊料凸块之间形成焊料桥。
图5示出到IC封装衬底的IC附接的又一示例。在这个示例中，IC封装衬底封装520包括衬底接合焊盘525，其为焊料掩模限定的(SMD)。如在图5的示例中所示的，在发生焊料桥接之前，焊料凸块510再次使衬底接合焊盘525上的突出物530润湿。
虽然在图4和5的示例中只示出一个IC管芯，但是多个IC管芯可以被包括在单个IC封装中，例如在处理器IC和存储器IC中，可取的是管芯之间的FLI的特征尺寸小于个体IC管芯的特征尺寸，以实现所需的互连。
图6示出IC和IC封装衬底的示例。两个IC(605、606)被包括在具有IC封装衬底620的一个IC封装中。示例示出在IC的接合焊盘与IC封装衬底620的接合焊盘之间的多个互连635。示例还示出用于两个IC之间的互连的嵌入式互连桥640(EmIB)。IC 605可以包括具有一百微米(100μm)管芯互连间距的处理器(例如，中央处理器单元或CPU)。IC封装衬底620可以具有65μm特征(例如，FLI和EmIB中的一个或两个)以适应去往IC封装内的第二IC 606的连接。使用在IC封装衬底的接合焊盘上的一个或多个突出物的焊料润湿可以避免焊料凸块之间的桥接，而不管在特征尺寸上的失配。
不同的方法可以用于形成前面在本文所述的焊料润湿突出物。根据一些示例，可以通过将焊料润湿突出物激光直接沉积到接合焊盘上来在接合焊盘上形成焊料润湿突出物。
图7示出自动激光直接沉积台700的示例的部分。沉积台包括激光能量源750和用于容纳工件的平台。激光能量源750可以提供紫外(UV)激光束。激光能量可以作为激光脉冲被提供。工件可以包括一个或多个IC封装衬底720，其包括接合焊盘725。激光直接沉积台包括用于容纳与接合焊盘相对的焊料润湿材料的膜755的固定装置。激光能量施加到焊料润湿材料的膜755以将焊料润湿材料转移到IC封装衬底720的接合焊盘。
在图7所示的示例中，焊料润湿材料的膜755包括在一侧上的透明材料(例如玻璃或透明塑料的衬底)和在另一侧上的焊料润湿材料。激光能量施加到膜的透明侧。激光能量源750施加特定大小和持续时间的激光能量以通过透明材料照射焊料润湿材料。在所示示例中，激光束被示为从激光能量源750直接行进到膜和接合焊盘。然而，激光束可以在激光能量源和膜之间偏转(例如通过透镜或反射镜)。
在透明材料和焊料润湿材料的界面处的快速蒸发使焊料润湿材料被推到接合焊盘上。焊料焊剂可以在焊料润湿突出物的激光沉积之前被施加到IC封装衬底的接合焊盘。焊料焊剂的添加可以提高湿润材料到接合焊盘的粘附。转移材料的空间尺寸可以与激光斑点尺寸一样小，且空间尺寸可以具有数十微米的数量级。空间尺寸也可以由膜上的转移材料的厚度和膜与接合焊盘的距离来确定。形成突出物时的激光直接沉积过程的一些优点是，该过程是掩模较少的并具有使用各种材料来实现的能力。激光能量也可以用于使封装衬底接合焊盘上的材料熔化或回流。
激光能量源可以是相对于工件可移动的，或工件可以是相对于激光能量源可移动的。在一些示例中，激光能量源750可以扫描到焊料润湿材料的膜755上的与接合焊盘725相对的位置。激光能量源的脉冲可以施加到焊料润湿材料的膜以将焊料润湿材料转移到多个接合焊盘。在某些示例中，激光能量源和工件二者实质上是静止的，并且通过控制透镜或反射镜将激光能量引导到膜上的位置来在焊料润湿材料的膜之上扫描激光能量，以转移焊料润湿材料。在某些示例中，激光能量在快速度下在膜之上是光栅扫描的(例如通过电流计机构)。对于激光能量的光栅扫描，每秒可以扫描几千个点或位置。
在一些示例中，工件可以是相对于激光能量源可移动的。平台可以扫描焊料润湿材料的膜和通过激光能量源的一个或多个IC封装衬底。当接合焊盘被设置成与激光能量源相对时，激光能量的脉冲施加到透明材料的膜以将焊料润湿材料转移到接合焊盘上。相对于激光能量源移动工件的这种方法一般比光栅扫描方法慢。
其它方法可以用于在接合焊盘上形成焊料润湿材料的突出物。根据一些示例，可以通过将焊料润湿突出物激光直接写入到接合焊盘上来在IC封装衬底的接合焊盘上形成焊料润湿突出物。直接激光写入或三维(3D)激光光刻法指的是使用光敏材料来扫描任意3D结构。在其它示例中，焊料润湿突出物可以包括焊膏，且突出物可以通过焊膏印刷来形成在接合焊盘上。在某些示例中，焊料润湿突出物可以包括金属，且突出物可以例如通过IC掩蔽和金属沉积过程被电镀到接合焊盘上。在接合焊盘上形成突出物的其它方法包括将焊料润湿材料线-嵌钉接合到接合焊盘，将焊料润湿微球附接到接合焊盘，将焊料润湿微点附接到接合焊盘，将焊料润湿材料焊料喷射到接合焊盘上，以及将焊料润湿材料注射成型到接合焊盘上。
使用半导体芯片组件和如在本公开中所述的焊料润湿突出物的电子设备的示例被包括以显示较高级设备应用的示例。图8是根据至少一个实施例的合并至少一个焊料和/或方法的电子设备800的示例的方框图。电子设备800仅仅是实施例可以被使用的电子系统的一个示例。电子设备800的示例包括但不限于个人计算机、平板计算机、移动电话、游戏设备、MP3或其它数字音乐播放器等。在这个示例中，电子设备800包括数据处理系统，其包括系统总线802以耦合系统的各种部件。系统总线802提供电子设备800的各种部件之中的通信链路，并可以被实施为单个总线、总线的组合或任何其它适当的方式。
电子组件810耦合到系统总线802。电子组件810可以包括任何电路或电路的组合。在一个实施例中，电子组件810包括处理器812，其可以具有任何类型。如在本文使用的，“处理器”意指任何类型的计算电路，例如但不限于微处理器、微控制器、复杂指令集计算(CISC)微处理器、精简指令集计算(RISC)微处理器、超长指令字(VLIW)微处理器、图形处理器、数字信号处理器(DSP)、多核处理器或任何其它类型的处理器或处理电路。
可以被包括在电子组件810中的其它类型的电路是定制电路、专用集成电路(ASIC)等，例如用于在无线设备(例如移动电话、个人数字助理、便携式计算机、双向无线电装置和类似的电子系统)中使用的一个或多个电路(例如通信电路814)。IC可以执行任何其它类型的功能。
电子设备800还可以包括外部存储器820，其又可以包括适合于特定的应用的一个或多个存储器元件，例如以随机存取存储器(RAM)的形式的主存储器822、一个或多个硬盘驱动器824、和/或操纵可移除介质826(例如光盘(CD)、闪存卡、数字视频盘(DVD)等)的一个或多个驱动器。
电子设备800还可以包括显示设备816、一个或多个扬声器818和键盘和/或控制器830，其可以包括鼠标、轨迹球、触摸屏、语音识别设备或允许系统用户将信息输入到电子设备800内并从电子设备800接收信息的任何其它设备。
对较小的电子设备尺寸的要求连同对增大的设备功能的要求一起产生了对IC封装的挑战。如前面解释的，当IC封装的特征尺寸变得更细以适应更密集的封装时，可能出现问题。例如，管芯之间的FLI的特征尺寸可能需要比个体IC管芯的特征尺寸小。特征尺寸中的失配可以导致焊料凸块之间的桥接。使用在IC封装衬底的接合焊盘上的焊料润湿材料的一个或多个突出物的焊料润湿可以避免在焊料凸块之间的桥接，而不考虑特征尺寸中的失配。
额外的注解和示例
为了更好地示出本文公开的方法和装置，下面提供示例的非限制性列表。
示例1可以包括主题(例如方法、用于执行行动的模块或可以使机器执行行动的机器可读介质)，其包括在IC管芯的接合焊盘上形成焊料凸块，在IC封装衬底的接合焊盘上形成焊料润湿突出物，以及将IC管芯的焊料凸块接合到IC封装衬底的焊料润湿突出物。
在示例2中，示例1的主题可选地包括：在IC封装衬底的接合焊盘上形成焊料润湿突出物包括将焊料润湿突出物激光直接沉积到IC封装衬底的接合焊盘上。
在示例3中，示例2的主题可选地包括：将焊料润湿材料的膜布置成与IC封装衬底的接合焊盘相对，以及将激光能量施加到焊料润湿材料的膜以将焊料润湿材料转移到IC封装衬底的接合焊盘。
在示例4中，示例2的主题可选地包括：将膜布置成与IC封装衬底的接合焊盘相对，所述膜在一侧上具有焊料润湿材料并且在另一侧上具有透明材料，以及将激光能量施加到膜的透明侧。
在示例5中，示例3和4之一或任何组合的主题可选地包括：将焊料润湿材料的膜布置成与一个或多个IC封装衬底的多个接合焊盘相对，以及将激光能量源扫描到焊料润湿材料的膜上的与多个接合焊盘相对的位置，并将激光能量的脉冲施加到焊料润湿材料的膜以将焊料润湿材料转移到多个接合焊盘。
在示例6中，示例3和4之一或任何组合的主题可选地包括：将焊料润湿材料的膜布置成与一个或多个IC封装衬底的多个接合焊盘相对，以及使多个接合焊盘扫描经过激光能量源，并且当接合焊盘被设置成与激光能量源相对时，将激光能量的脉冲施加到透明材料的膜以将焊料润湿材料转移到接合焊盘上。
在示例7中，示例2-6之一或任何组合的主题可选地包括：在焊料润湿突出物的激光沉积之前将焊料焊剂施加到IC封装衬底的接合焊盘。
在示例8中，示例1-7之一或任何组合的主题可选地包括：将焊料润湿突出物激光直接写入到IC封装衬底的接合焊盘上。
在示例9中，示例1-8之一或任何组合的主题可选地包括下列操作中的至少一个：将焊料润湿材料以线-嵌钉方式接合到接合焊盘，将焊料润湿微球附接到接合焊盘，将焊料润湿微点附接到接合焊盘，将焊料润湿材料焊料喷射到接合焊盘上，或将焊料润湿材料注射成型到接合焊盘上。
在示例10中，示例1-9之一或任何组合的主题可选地包括下列操作中的至少一个：在接合焊盘上焊膏印刷焊料润湿突出物或在接合焊盘上电镀焊料润湿突出物。
在示例11中，示例1-10之一或任何组合的主题可选地包括加热焊料凸块以形成熔化的焊料凸块以及使熔化的焊料凸块与焊料润湿突出物接触。
在示例12中，示例1-11之一或任何组合的主题可选地包括加热焊料凸块以形成熔化的焊料凸块以及将IC管芯的熔化的焊料凸块压到IC封装衬底的焊料润湿突出物上。
示例13可以包括主题，或可以可选地与示例1-12之一或任何组合来组合以包括主题(例如装置)，包括用于在集成电路(IC)管芯的接合焊盘上形成焊料凸块的模块、用于在IC封装衬底的接合焊盘上形成焊料润湿突出物的模块、以及用于将IC管芯的焊料凸块接合到IC封装衬底的焊料润湿突出物的模块。
在示例14中，示例13的用于在接合焊盘上形成焊料润湿突出物的模块可选地包括自动激光直接沉积台。
在示例15中，示例14的主题可选地包括：位于透明衬底上并与IC封装衬底的接合焊盘相对布置的焊料润湿材料的膜，以及激光能量源，其用于将激光能量施加到透明衬底以将焊料润湿材料转移到IC封装衬底的接合焊盘上。
在示例16中，示例14-15之一或任何组合的主题可选地包括：与一个或多个IC封装衬底的多个接合焊盘相对布置的焊料润湿材料的膜，以及所施加的激光能量可选地可以扫描到转移材料的膜上的与多个接合焊盘相对的位置。
在示例17中，示例14-15之一或任何组合的主题可选地包括：焊料润湿材料的膜被布置成与一个或多个IC封装衬底的多个接合焊盘相对，其中焊料润湿材料的膜和一个或多个IC封装衬底相对于激光能量源是可移动的，以将接合焊盘和焊料润湿材料设置成与所施加的激光能量相对。
在示例18中，示例13-17中的任一项的用于将IC管芯的焊料凸块接合到IC封装衬底的焊料润湿突出物的模块可选地包括：被配置成将IC管芯接合到IC封装衬底的自动热压缩接合(TCB)台。
示例19可以包括主题，或可以可选地与示例1-18之一或任何组合来组合以包括主题(例如电子组件，其包括集成电路(IC)封装衬底；在IC封装衬底上的多个接合焊盘，其中接合焊盘包括用于电连接到IC管芯的表面；以及延伸离开多个接合焊盘中的一个或多个的表面的焊料润湿材料的一个或多个突出物。
在示例20中，示例19的主题可以可选地包括焊料润湿突出物，其包括基部和顶端，其中基部的宽度大于顶端的宽度。
在示例21中，示例20的主题可以可选地包括具有一百微米(100微米)或更小的基部宽度的焊料润湿突出物。
在示例22中，示例19-21之一或任何组合的主题可选地包括具有比IC封装衬底的接合焊盘的表面的宽度小的宽度的焊料润湿突出物。
在示例23中，示例19-22之一或任何组合的主题可选地包括焊料润湿突出物，其包括钨、金、铜或银中的至少一个。
在示例24中，示例19-23之一或任何组合的主题可选地包括焊料润湿突出物，其包括焊膏。
在示例25中，示例19-23之一或任何组合的主题可选地包括接合到IC封装衬底的IC管芯，其中IC管芯包括处理器和存储器中的至少一个。
这些非限制性示例中的每个可以依赖其自身，或可以在各种置换或组合中与一个或多个其它示例组合。
上述具体实施方式包括对形成具体实施方式的一部分的附图的引用。附图通过示例的方式示出可以实践本公开内容的特定实施例。这些实施例在本文也被称为“示例”。在本文档和通过引用并入的任何文档之间的不一致使用的情况下，在所并入的参考资料中的使用应被考虑为对本文档的使用的补充；对于不能调和的不一致，在本文档中的使用有支配权。
在本文档中，使用术语“一”，如在专利文档中常见的，以包括一个或多于一个，独立于“至少一个”或“一个或多个”的任何其它示例或使用。在该文档中，术语“或”用于指非排他的或，使得“A或B”包括“A但不是B”、“B但不是A”以及“A和B”，除非另有指示。在所附权利要求中，术语“包括(including)”和“其中(in which)”分别用作相应的术语“包括(comprising)”和“其中(wherein)”的浅近英语等同形式。而且，在接下来的权利要求中，术语“包括(including)”和“包括(comprising)”是开放式的，也就是说，包括除了在权利要求中的这样的术语之后列出的那些元件以外的元件的系统、设备或过程仍然被认为落在该权利要求的范围内。此外，在接下来的权利要求中，术语“第一”、“第二”、“第三”等仅用作标记，并且并不打算将数字要求强加在它们的对象上。
本文所述的方法示例可以至少部分地是机器或计算机实现的。一些示例可以包括利用可操作用于配置电子设备以执行上述示例中所述的方法的指令来编码的计算机可读介质或机器可读介质。这样的方法的实施方式可以包括代码，例如微代码、汇编语言代码、较高级语言代码等。这样的代码可以包括用于执行各种方法的计算机可读指令。代码可以形成计算机程序产品的部分。此外，代码可以在执行期间或在其它时间有形地存储在一个或多个易失性或非易失性计算机可读介质上。这些计算机可读介质可以包括但不限于硬盘、可移除磁盘、可移除光盘(例如压缩磁盘和数字视频盘)、磁带、存储卡或棒、随机存取存储器(RAM)、只读存储器(ROM)等。在一些示例中，载体介质可以携带实施方法的代码。术语“载体介质”可以用于代表载波，代码在载波上被传输。
以上描述旨在进行例示而非进行限制。例如，上述示例(或其一个或多个方面)可以彼此接合来使用。其它实施例可以例如由本领域中的普通技术人员在审阅以上描述时使用。提供摘要以符合37 C.F.R.§1.72(b)，从而允许读者快速确定技术公开的性质。在理解摘要不用于解释或限制权利要求的范围或意义的情况下提交摘要。此外，在以上具体实施方式中，各种特征被集中在一起以精简本公开内容。这不应被解释为意指未要求保护的所公开的特征对任何权利要求都是必不可以少的。更确切地，创造性主题可以存在于少于特定的所公开的实施例的所有特征中。因此下面的权利要求特此合并到具体实施方式中，每个权利要求独立地作为单独的实施例。本发明的范围应参考所附权利要求连同为这样的权利要求赋予权利的等同物的完整范围来确定。

Claims (25)

1.一种用于将集成电路(IC)附接到IC封装衬底的方法，所述方法包括：
在IC管芯的接合焊盘上形成焊料凸块；
在IC封装衬底的接合焊盘上形成焊料润湿突出物；以及
将所述IC管芯的所述焊料凸块接合到所述IC封装衬底的所述焊料润湿突出物。
2.如权利要求1所述的方法，其中，在所述IC封装衬底的所述接合焊盘上形成焊料润湿突出物包括：将所述焊料润湿突出物激光直接沉积到所述IC封装衬底的所述接合焊盘上。
3.如权利要求2所述的方法，其中，所述焊料润湿突出物的激光直接沉积包括：
与所述IC封装衬底的所述接合焊盘相对地布置焊料润湿材料的膜；以及
将激光能量施加到所述焊料润湿材料的膜以将所述焊料润湿材料转移到所述IC封装衬底的所述接合焊盘。
4.如权利要求2所述的方法，其中，所述焊料润湿突出物的激光直接沉积包括：
与所述IC封装衬底的所述接合焊盘相对地布置膜，所述膜在一侧上具有焊料润湿材料并且在另一侧上具有透明材料，以及
将激光能量施加到所述膜的透明侧。
5.如权利要求3或权利要求4所述的方法，其中，布置焊料润湿材料的膜包括与一个或多个IC封装衬底的多个接合焊盘相对地布置所述焊料润湿材料的膜，并且其中，施加激光能量包括：使激光能量源扫描到所述焊料润湿材料的膜上的与所述多个接合焊盘相对的位置，以及将激光能量的脉冲施加到所述焊料润湿材料的膜以将所述焊料润湿材料转移到所述多个接合焊盘。
6.如权利要求3或权利要求4所述的方法，其中，布置焊料润湿材料的膜包括与一个或多个IC封装衬底的多个接合焊盘相对地布置所述焊料润湿材料的膜，并且其中，施加激光能量包括：使所述多个接合扫描经过所述激光能量源，以及将激光能量的脉冲施加到透明材料的所述膜以在接合焊盘被设置成与所述激光能量源相对时将所述焊料润湿材料转移到接合焊盘上。
7.如权利要求2所述的方法，包括在所述焊料润湿突出物的激光沉积之前将焊料焊剂施加到所述IC封装衬底的所述接合焊盘。
8.如权利要求1所述的方法，其中，在所述IC封装衬底的所述接合焊盘上形成焊料润湿突出物包括将所述焊料润湿突出物激光直接写入到所述IC封装衬底的所述接合焊盘上。
9.如权利要求1所述的方法，其中，在所述IC封装衬底的所述接合焊盘上形成焊料润湿突出物包括下列操作中的一个：将焊料润湿材料以线-嵌钉方式接合到所述接合焊盘；将焊料润湿微球附接到所述接合焊盘；将焊料润湿微点附接到所述接合焊盘；将所述焊料润湿材料焊料喷射到所述接合焊盘上；或将所述焊料润湿材料注射成型到所述接合焊盘上。
10.如权利要求1所述的方法，其中，在所述IC封装衬底的所述接合焊盘上形成焊料润湿突出物包括下列操作中的至少一个：在所述接合焊盘上焊膏印刷所述焊料润湿突出物或在所述接合焊盘上电镀所述焊料润湿突出物。
11.如权利要求7-10中的任一项所述的方法，其中，将所述IC管芯的所述焊料凸块接合到所述IC封装衬底的所述焊料润湿突出物包括：加热所述焊料凸块以形成熔化的焊料凸块以及使所述熔化的焊料凸块与所述焊料润湿突出物接触。
12.如权利要求7-10中的任一项所述的方法，其中，将所述IC管芯的所述焊料凸块接合到所述IC封装衬底的所述焊料润湿突出物包括加热所述焊料凸块以形成熔化的焊料凸块以及将所述IC管芯的所述熔化的焊料凸块压到所述IC封装衬底的所述焊料润湿突出物上。
13.一种装置，包括：
用于在集成电路(IC)管芯的接合焊盘上形成焊料凸块的模块；
用于在IC封装衬底的接合焊盘上形成焊料润湿突出物的模块；以及
用于将所述IC管芯的所述焊料凸块接合到所述IC封装衬底的所述焊料润湿突出物的模块。
14.如权利要求13所述的装置，其中，用于在所述接合焊盘上形成焊料润湿突出物的所述模块包括自动激光直接沉积台。
15.如权利要求14所述的装置，其中，所述自动激光直接沉积台包括：
焊料润湿材料的膜，其在透明衬底上并被布置成与所述IC封装衬底的所述接合焊盘相对；以及
激光能量源，用于将激光能量施加到所述透明衬底以将所述焊料润湿材料转移到所述IC封装衬底的所述接合焊盘上。
16.如权利要求15所述的装置，其中，所述焊料润湿材料的膜被布置成与一个或多个IC封装衬底的多个接合焊盘相对，并且其中，所施加的激光能量能够扫描到转移材料的膜上的与所述多个接合焊盘相对的位置。
17.如权利要求15所述的装置，其中，所述焊料润湿材料的膜被布置成与一个或多个IC封装衬底的多个接合焊盘相对，其中，所述焊料润湿材料的膜和所述一个或多个IC封装衬底能够相对于所述激光能量源移动以将接合焊盘和焊料润湿材料设置成与所施加的激光能量相对。
18.如权利要求13-17中的任一项所述的装置，其中，用于将所述IC管芯的所述焊料凸块接合到所述IC封装衬底的所述焊料润湿突出物的所述模块包括被配置为将所述IC管芯接合到所述IC封装衬底的自动热压缩接合(TCB)台。
19.一种电子组件，包括：
集成电路(IC)封装衬底；
在所述IC封装衬底上的多个接合焊盘，其中，接合焊盘包括用于电连接到IC管芯的表面；以及
焊料润湿材料的一个或多个突出物，其延伸离开所述多个接合焊盘中的一个或多个接合焊盘的所述表面。
20.如权利要求19所述的电子组件，其中，焊料润湿突出物包括基部和顶端，其中，所述基部的宽度大于所述顶端的宽度。
21.如权利要求20所述的电子组件，其中，所述基部具有一百微米(100微米)或更小的宽度。
22.如权利要求19所述的电子组件，其中，焊料润湿突出物的宽度小于所述IC封装衬底的所述接合焊盘的所述表面的宽度。
23.如权利要求19-22中的任一项所述的电子组件，其中，焊料润湿突出物包括钨、金、铜或银中的至少一种。
24.如权利要求19-22中的任一项所述的电子组件，其中，焊料润湿突出物包括焊膏。
25.如权利要求19-22中的任一项所述的电子组件，包括接合到所述IC封装衬底的所述IC管芯，其中，所述IC管芯包括处理器和存储器中的至少一个。
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