TW201539692A - 用於嵌入式橋接之晶片互連技術的方法及製程 - Google Patents

用於嵌入式橋接之晶片互連技術的方法及製程 Download PDF

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Publication number
TW201539692A
TW201539692A TW104104551A TW104104551A TW201539692A TW 201539692 A TW201539692 A TW 201539692A TW 104104551 A TW104104551 A TW 104104551A TW 104104551 A TW104104551 A TW 104104551A TW 201539692 A TW201539692 A TW 201539692A
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Taiwan
Prior art keywords
solder
pad
package substrate
wetted
die
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TW104104551A
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English (en)
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TWI677069B (zh
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Rajendra C Dias
Manish Dubey
Emre Armagan
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Intel Corp
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Publication of TW201539692A publication Critical patent/TW201539692A/zh
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Abstract

一種用於附接一積體電路(IC)到一IC封裝基體的方法包含有在一IC晶粒的一焊墊上形成一焊料凸塊、在一IC封裝基體的一焊墊上形成一焊料潤濕突出部分、以及把該IC晶粒的該焊料凸塊接合到該IC封裝基體的該焊料潤濕突出部分。

Description

用於嵌入式橋接之晶片互連技術的方法及製程
實施例係涉及積體電路的封裝。一些實施例係涉及用於封裝積體電路的焊料接合。
發明背景
電子裝置通常包含有被連接到一種次組件諸如一基體或母板的積體電路(IC)。該等IC可被插入至一IC封裝中以形成一第一級組件,在它被併入至一更高級組件之前。該第一級組件可以包括第一級互連(FLI),其提供從一個或多個IC晶粒的接點焊墊到該IC封裝的接點焊墊的電子連續性。
隨著電子系統的設計變得更為複雜,要滿足電子裝置所期望的尺寸限制是一個挑戰。一些製造商把FLI包含在IC封裝中,該等IC封裝具有一比正被封裝之IC晶粒還要細的間距。因為特徵間距被減少,被使用來附接IC晶粒到IC封裝之目前方法會變得更具挑戰性並包括增加的風險。這可能會導致在該封裝製程中的低產量。因此,對於解決IC封裝的間距挑戰並提供一穩健且具成本效益設計之裝置、系統和方法,存在有一般性的需求。
依據本發明之一實施例,係特地提出一種用於把一積體電路(IC)附接到一IC封裝基體的方法,該方法包含有:在一IC晶粒的一焊墊上形成一焊料凸塊;在一IC封裝基體的一焊墊上形成一焊料潤濕突出部分;以及把該IC晶粒的該焊料凸塊接合到該IC封裝基體的該焊料潤濕突出部分。
105‧‧‧晶粒
110‧‧‧焊料凸塊
115‧‧‧焊墊
120‧‧‧封裝基體
125‧‧‧焊墊
130‧‧‧WLUF
205‧‧‧晶粒
210‧‧‧焊料凸塊
215‧‧‧焊墊
220‧‧‧封裝基體
225‧‧‧焊墊
245‧‧‧防焊層
300‧‧‧方法
305~315‧‧‧方塊
405‧‧‧晶粒
410‧‧‧焊料凸塊
415‧‧‧焊墊
420‧‧‧封裝基體
425‧‧‧焊墊
430‧‧‧焊料潤濕材料突出部分
505‧‧‧晶粒
510‧‧‧焊料凸塊
520‧‧‧封裝基體
525‧‧‧焊墊
530‧‧‧焊料潤濕材料突出部分
545‧‧‧防焊層
605、606‧‧‧IC
620‧‧‧封裝基體
635‧‧‧互連
640‧‧‧嵌入式互連橋接
720‧‧‧封裝基體
725‧‧‧焊墊
730‧‧‧焊料潤濕材料突出部分
750‧‧‧雷射能量源
755‧‧‧轉移材料
760‧‧‧透明膜
800‧‧‧電子裝置
802‧‧‧系統匯流排
810‧‧‧電子組件
812‧‧‧處理器
814‧‧‧通信電路
816‧‧‧顯示裝置
818‧‧‧揚聲器
820‧‧‧外部記憶體
822‧‧‧主記憶體(RAM)
824‧‧‧硬碟
826‧‧‧可移除媒體
830‧‧‧鍵盤/控制器
在該等附圖中,其不一定是按比例被繪製,相同的標號可以描述在不同的視圖中相似的組件。具有不同字母後綴的相同標號可以表示類似組件的不同實例。該等附圖通常是以實例的方式圖示出在本文中所討論的各種實例,而不是以限制的方式。
圖1圖示出把IC附接到一IC封裝基板的一簡化實例;圖2圖示出把IC附接到一IC封裝基板的另一實例;圖3根據一些實施例展示出用於把IC附接到一IC封裝基板之一方法的一實例圖;圖4根據一些實施例仍圖示出把IC附接到一IC封裝基板的另一實例;圖5根據一些實施例仍圖示出把IC附接到一IC封裝基板的另一實例;圖6根據一些實施例展示出IC和一IC封裝基板的一簡化圖示; 圖7根據一些實施例圖示出一自動雷射直接沉積台實例的部分;圖8根據至少一實施例係結合至少一IC附接和/或方法的一電子裝置實例的一方塊圖。
較佳實施例之詳細說明
把IC附接到晶粒封裝的一傳統方法包括在該IC晶粒上形成焊錫球或凸塊(焊錫在晶粒上,即SoD)然後把該等焊球接合到該IC封裝一基體的焊墊。問題可能會發生在當該IC封裝基體的特徵尺寸變得更細微以容納更密的封裝時。舉例來說,多個IC晶粒可以被包含在一單一IC封裝中,諸如一處理器IC和一記憶體IC。在晶粒之間FLI的該特徵尺寸可能需要比該個別IC晶粒的特徵尺寸要小。在特徵尺寸中如此的不匹配可能會導致出在焊料凸塊之間的橋接。
圖1圖示出把IC附接到一IC封裝基體的一簡化實例。一IC晶粒105,其具有連接到該等IC焊墊115之焊料凸塊110,正被接合到具有基體焊墊125的IC封裝基體120。該IC晶粒105被展示為在該等IC焊墊115的周圍具有晶圓層級下填充(WLUF 130)。該等焊料凸塊被加熱以促使接合。作為一晶片附接製程中的部分,當該晶粒被移向該IC封裝基體時,該等焊料凸塊110會相互接觸以在一個或兩個相鄰的IC焊墊115與相鄰的基體焊墊125之間形成非計劃中的電氣短路。
圖2圖示出把IC附接到一IC封裝基體的另一實 例。在本實例中,該IC封裝基體220包括了被限定成使用一防焊層245(即,防焊層限定或SMD)的基體焊墊225。該圖說明,在該接合的製程中,熔融的焊料凸塊仍能扁平化並再次地相互接觸而形成一非計劃中電氣短路。為了避免在焊料凸塊之間的該橋接,一種方法是允許熔融的焊料凸塊進行接觸並潤濕一被放置在該等封裝基體焊墊上的材料。
圖3展示出用於把IC附接到一IC封裝基板之一方法300的一實例圖。在305,一焊料凸塊被形成在一IC晶粒的一焊墊上。舉例來說,該焊料凸起可以是一SoD焊料球、一球柵陣列或BGA接觸、或一可控塌陷晶片連接(C4)的焊料凸塊。該等焊料凸塊可在一自動焊料凸塊成形台處被加入。該等焊料凸塊的加入可使用放置在一個或多個IC晶粒上的一防焊層並施加焊料到該防焊層上,以形成該等焊料凸塊。在310,一焊料潤濕突出部分被形成在一IC封裝基體的一焊墊上。
圖4展示出一具有一焊料潤濕突出部分的一焊墊的一實例。一IC晶粒405和一IC封裝基體420被展示在該圖中。該IC封裝基體包括多個基體焊墊425,而該等焊墊包括一表面用於電氣連接到該IC晶粒405。該IC晶粒405可以包括一處理器和一記憶體的一個或多個。為了簡單起見,只有兩個焊墊被顯示在該圖中。在該實例中所展示的兩個基體焊墊425包括焊料潤濕材料的一突出部分430。焊料潤濕係指附接到該IC和該IC封裝基體的該等焊墊的熔融焊料。該焊料潤濕的材料可以包括鎢、金、銅、或銀的至少一種 或一種合金,其包括至少一鎢、金、銅、或銀。在特定的實例中,該焊料潤濕的材料包括焊膏。
在圖4的該實例中,該焊料係位於該IC晶粒的該等IC焊墊415上。該等IC焊墊415可被加熱以提供熔融的焊料。該基體焊墊425也可以在焊料潤濕期間被加熱。該焊料潤濕材料的突出部分430會從該基體焊墊425的該表面向外延伸。在該實例中所示的該突出部分430有一子彈狀的形狀,但該突出部分430可具有其他的形狀,諸如一圓錐形狀或一本質上是圓錐狀的形狀。具有一本質上為圓錐形狀的一焊料潤濕突出部分可以包括一基部和一頂點,該基部的寬度會大於該頂點的寬度。這樣的一焊料潤濕突出部分430可以具有一百微米(100微米)或更小的寬度的基部。在其他的實例中,該焊料潤濕突出部分可以是一凸塊或嵌柱。該焊料潤濕突出部分的寬度通常比該IC封裝基體之該焊墊的該表面寬度要小。
返回到圖3,在315,該IC晶粒的該焊料凸塊被接合到該IC封裝基體的該焊料潤濕突出部分。該接合的一實例圖示被展示在圖4中的右邊。該IC晶粒的該焊料凸塊410可被加熱以形成一熔融的焊料凸塊。藉由使該熔融的焊料凸塊與該焊料潤濕突出部分接觸,該IC晶粒的該焊料凸塊410被接合到該焊料潤濕突出部分。當該焊料凸塊410的熔融焊料進入到與一焊料潤濕材料的一突出部分做接觸時,該熔融的焊料會燈芯狀朝向該基體焊墊並且會改變形狀。在焊料橋接發生之前,該焊料凸塊410濕潤在該基體焊墊 425上的該材料。在該IC和該IC封裝基體之間的這種接合可以用一自動IC接合台來完成。在一些實例中,該IC晶粒之該熔融的焊料凸塊被按壓到該IC封裝基體的該焊料潤濕突出部分作為接合製程的一部分。這種類型的接合可以使用一自動熱壓縮接合(TCB)台來實現,其把該IC晶粒接合到該IC封裝基體。因為該焊料凸塊410與該焊料潤濕材料突出部分的接觸,在扁平化焊料凸塊之間焊料橋接的形成可在該按壓過程中被防止。
圖5圖示出把IC附接到一IC封裝基體的另一實例。在本實例中,該IC封裝基體520包括被阻焊層限定(SMD)的基體焊墊525。如在圖5的該實例中所示,在焊料橋接發生之前,該等焊料凸塊510再次地濕潤在該基體焊墊525上的該突出部分530。
雖然圖4和5的該等實例中只有一IC晶粒被展示,但多個IC晶粒可以被包括在一單一IC封裝中,諸如一處理器IC和一記憶體IC。可被期望的是對於在該晶粒之間FLI的該特徵尺寸要比該個別IC晶粒的該特徵尺寸要小以達到所需的互連。
圖6展示出IC和IC封裝基體的一實例。兩個IC(605、606)被包括在具有一IC封裝基體620的一IC封裝中。該實例顯示在該等IC的焊墊和該IC封裝基體620的焊墊之間的若干互連635。該實例還展示出一嵌入式互連橋接640(EmIB)用於在該等兩個IC之間的互連。該IC 605可以包括一處理器(舉例來說,中央處理單元或CPU),其具有一百 微米(100微米)晶粒互連間距。該IC封裝基體620可具有65μm特徵(舉例來說,FLI和EmIB的一個或兩個)以在該IC封裝內容納該第二IC 606的連接。使用在該IC封裝基體之焊墊上的一個或多個突出部分的焊料潤濕可避免在焊料凸塊之間的橋接,儘管在特徵尺寸上並不匹配。
不同的方法可被使用來形成在前文中所描述的該焊料潤濕突出部分。根據一些實例,藉由在該焊墊上焊料潤濕突出部分的雷射直接沉積,一焊料潤濕突出部分可被形成在一焊墊上。
圖7圖示出一自動雷射直接沉積台700。該沉積台包括一個雷射能量源750和一平台以持有一工件。該雷射能量源750可以提供一紫外線(UV)雷射光束。該雷射能量可以一種雷射脈衝型式被提供。該工件可以包括一個或多個包含有焊墊725的IC封裝基體720。該雷射直接沉積台包括一夾具以在該等焊墊的對面持有一焊料潤濕材料755膜。雷射能量被施加到該焊料潤濕材料755膜以把該焊料潤濕材料轉移到該IC封裝基體720的該焊墊。
在圖7中所示的實例中,該焊料潤濕材料755膜包括在一側有一透明材料(舉例來說,一玻璃或透明塑料的基體)且在另一側上有焊料潤濕材料。該雷射能量被施加到該膜的該透明側。該雷射能量源750施加指定大小和持續時間的雷射能量透過該透明的材料來照射該焊料潤濕材料。在該所示的實例中,該雷射光束被展示為從該雷射能量源750朝向該膜和該焊墊直行。然而,該雷射光束可以在該雷射 能量源和該膜之間被偏轉(舉例來說,藉由一透鏡或反射鏡)。
在該透明材料和該焊料潤濕材料之間的該介面快速的汽化會致使該焊料潤濕材料被推進到一焊墊。在該焊料潤濕突出部分的雷射沉積之前,焊劑可被施加到該IC封裝基體的該焊墊。該焊劑的加入可提高該潤濕材料到該焊墊的密合性。該轉移材料的空間大小可以和該雷射光點大小一樣的小,該空間的大小可以是幾十微米的量級。該空間大小也可以由在該薄膜上該轉移材料的厚度,並由該膜與該焊墊間的距離來決定。對於形成該等突出部分而言,雷射直接沉積製程的一些優點是該製程的遮罩較少,並具有使用多種材料來被實現的能力。該雷射能量也可以被使用來熔化或回流在該封裝基體焊墊上的該材料。
該雷射能量源可以相對於該工件移動或該工件可以相對於該雷射能量源移動。在一些實例中,該雷射能量源750可掃描到在該等焊墊725對面焊料潤濕材料755該膜的位置上。雷射能量脈衝可被施加到該焊料潤濕材料膜以轉移該焊料潤濕材料到該等數個焊墊。在特定的實例中,該雷射能量源和該工件基本上是靜止的,而該雷射能量會在該焊料潤濕材料膜上被掃瞄,藉由控制一透鏡或反射鏡來把該雷射能量導向到在該膜的位置上以轉移該焊料潤濕材料。在特定的實例中,該雷射能量在該膜上以一快的速度被光柵掃描(舉例來說,藉由一電流計機制)。對於該雷射能量的光柵掃描來說,每秒可以有數千個點或位置被 掃描。
在一些實例中,該工件可以相對於該雷射能量源做移動。該平台可以掃描通過該雷射能量源的該焊料潤濕材料膜和該等一個或多個IC封裝基體。該雷射能量脈衝被施加到該透明材料膜以轉移該焊料潤濕材料到一個焊墊,當它被定位在該雷射能量源的對面時。相對於該雷射能量源移動該工件的這種方法通常會比該光柵掃描方法慢。
其他的方法也可以被使用來在焊墊上形成焊料潤濕材料的該等突出部分。根據一些實例,可藉由把該焊料潤濕突出部分直接雷射寫入到該焊墊上來在該IC封裝基體的一焊墊上形成一焊料潤濕突出部分。直接雷射寫入或三維(3D)雷射微影術係指使用光敏材料掃描任意的3D結構。在其他的實例中,一焊料潤濕突出部分可包括焊膏且該突出部分可藉由焊膏列印被形成在一焊墊上。在特定的實例中,一焊料潤濕突出部分可包括一金屬,並且該突出部分可被電鍍到該焊墊上,諸如由一IC遮罩和金屬沉積加工。在該焊墊上形成該突出部分的其他方法包括引線嵌柱焊接焊料潤濕材料到該焊墊、附接一焊料潤濕微球到該焊墊、附接一焊料潤濕微點到該焊墊、焊料噴出該焊料潤濕材料到該焊墊、以及射出成形該焊料潤濕材料到該焊墊。
使用半導體晶片組件和如本發明內容所描述的焊料潤濕突出部分之一電子裝置實例被包括於此以展示出一更高階裝置應用的一實例。圖8根據至少一實施例係一電子裝置800實例的一方塊圖,其結合至少一焊料和/或方 法。電子裝置800僅是在其中實施例可被使用之一電子系統實例。電子裝置800的實例包含有,但不侷限於個人電腦、平板電腦、行動電話、遊戲裝置、MP3或其他數位音樂播放器、等等。在這個實例中,電子裝置800包括一資料處理系統,其包含有一系統匯流排802以耦接該系統的該等各種組件。系統匯流排802提供在該電子裝置800的該等各種組件之間的通信鏈路,並且可被實現為一單一匯流排、為一匯流排的組合,或為任何其他合適的方式。
一電子組件810被耦接到系統匯流排802。該電子組件810可包括任何電路或電路的組合。在一實施例中,該電子組件810包括一處理器812,其可以是任何類型的。如在本文中所使用的,「處理器」係指任何類型的計算電路,諸如但不侷限於一微處理器、一微控制器、一複雜指令集計算(CISC)微處理器、一精簡指令集計算(RISC)微處理器、一超長指令字(VLIW)微處理器、一圖形處理器、一數位信號處理器(DSP)、多核心處理器、或任何其他類型的處理器或處理電路。
可被包括在電子組件810中的其他類型電路是一定制電路、一應用特定積體電路(ASIC),或類似物,諸如,舉例來說,一個或多個電路(諸如一通信電路814)用於在無線裝置中使用,像是行動電話、個人資料助理、可攜式電腦、雙向無線電、和類似的電子系統。該IC可以執行任何其他類型的功能。
該電子裝置800還可以包括一外部記憶體820,其 又可以包括一個或多個適合於特定應用的記憶體元件,諸如一隨機存取記憶體(RAM)形式的主記憶體822、一個或多個硬碟824、和/或一個或多個可處理可移除媒體826的驅動器,諸如光碟(CD)、快閃記憶體卡、數位視訊光碟(DVD)、等等。
該電子裝置800還可以包括一顯示裝置816、一個或多個揚聲器818、以及一鍵盤和/或控制器830,其可包括一滑鼠、軌跡球、觸控螢幕、語音識別裝置,或允許一系統使用者可將資訊輸入和從電子裝置800接收資訊之任何其他的裝置。
較小電子裝置尺寸的需求以及增加裝置功能的需求產生了IC封裝的挑戰。如先前所解釋的,隨著該等IC封裝的特徵尺寸變得更細微以容納更密的封裝,可能會出現問題。舉例來說,在晶粒之間FLI的特徵尺寸可能需要比該個別IC晶粒的特徵尺寸要小。在特徵尺寸中的不匹配可能會導致焊料凸塊之間的橋接。儘管在特徵尺寸中的不匹配,在該IC封裝基體焊墊上的焊料潤濕材料使用一個或多個突出部分的焊料潤濕可以避免在焊料凸塊之間的橋接。
其他注意事項和實例
為了可更佳地說明本發明所揭露的該等方法和裝置,以下提供實例的一非限制性列表。
實例1可包括的技術主題(諸如一方法、用於執行動作的構件、或可導致該機器來執行動作的一機器可讀取 媒體)包括在一IC晶粒的一焊墊上形成一焊料凸塊、在一IC封裝基體的一焊墊上形成一焊料潤濕突出部分、以及把該IC晶粒的該焊料凸塊接合到該IC封裝基體的該焊料潤濕突出部分。
在實例2中,實例1的該技術主題可選擇性地包括在該IC封裝基體的該焊墊上形成一焊料潤濕突出部分,包括把焊料潤濕突出部分雷射直接沉積到該IC封裝基體的該焊墊上。
在實例3中,實例2的該技術主題可選擇性地包括在該IC封裝基體的該焊墊的對面佈置一焊料潤濕材料膜,並施加雷射能量到該焊料潤濕材料膜以把該焊料潤濕材料轉移到該IC封裝基體的該焊墊。
在實例4中,實例2的該技術主題可選擇性地包括在該IC封裝基體的該焊墊的對面佈置一膜,其在一側上具有該焊料潤濕材料並在另一側具有透明的材料,並施加雷射能量到該膜的該透明側。
在實例5中,實例3和4之一或任意組合的該技術主題可選擇性地包括在一個或多個IC封裝基體的數個焊墊的對面佈置該焊料潤濕材料膜,並掃描一雷射能量源到該等數個焊墊對面之該焊料潤濕材料膜上的位置,並施加雷射能量脈衝到該焊料潤濕材料膜以把該焊料潤濕材料轉移到該等數個焊墊。
在實例6中,實例3和4之一或任意組合的該技術主題可選擇性地包括在一個或多個IC封裝基體之數個焊墊 的對面佈置該焊料潤濕材料膜,並掃描該等數個通過雷射能量源的接合處並施加一雷射能量脈衝到該焊料潤濕材料膜以把該焊料潤濕材料轉移到一焊墊之上,當它被定位在該雷射能源的對面時。
在實例7中,實例2至6之一或任意組合的該技術主題可選擇性地包括在該焊料潤濕突出部分的雷射沉積之前,施加焊劑到該IC封裝基體的該焊墊。
在實例8中,實例1至7之一或任意組合的該技術主題可選擇性地包括把該焊料潤濕突出部分雷射直接寫入到該IC封裝基體的該焊墊之上。
在實例9中,實例1至8之一或任意組合的該技術主題可選擇性地包括引線嵌柱焊接焊料潤濕材料到該焊墊、附接一焊料潤濕微球到該焊墊、附接一焊料潤濕微點到該焊墊、焊料噴出該焊料潤濕材料到該焊墊、或射出成形該焊料潤濕材料到該焊墊的至少一種。
在實例10中,實例1至9之一或任意組合的該技術主題可選擇性地包括列印該焊料潤濕突出部分到該焊墊上的焊膏或電鍍該焊料潤濕突出部分到該焊墊上的至少一種。
在實例11中,實例1至10之一或任意組合的該技術主題可選擇性地包括加熱該焊料凸塊以形成一熔融的焊料凸塊並使該熔融的焊料凸塊與該焊料潤濕突出部分接觸。
在實例12中,實例1至11之一或任意組合的該技 術主題可選擇性地包括加熱該焊料凸塊以形成一熔融的焊料凸塊並按壓該IC晶粒的熔融焊料凸塊到該IC封裝基體的該焊料潤濕突出部分。
實例13可包括技術主題,或可選擇性地與實例1至12之一或任意組合相結合來包括技術主題(諸如一裝置),包括用於在一積體電路(IC)晶粒的一焊墊上形成一焊料凸塊的構件、用於在一IC封裝基體的一焊墊上形成一焊料潤濕突出部分的構件、以及用於把該晶粒的該焊料凸塊接合到該IC封裝基體的該焊料潤濕突出部分的構件。
在實例14中,實例13之用於在該焊墊上形成一焊料潤濕突出部分的該等構件可選擇性地包括一自動雷射直接沉積台。
在實例15中,實例14的該技術主題可選擇性地包括在一透明基體上的一焊料潤濕材料膜並被佈置在該IC封裝基體的該焊墊的對面,以及有一雷射能量源以施加雷射能量到該透明基體來把該焊料潤濕材料轉移到該IC封裝基體的該焊墊上。
在實例16中,實例14至15之一或任意組合的該技術主題可選擇性地包括被佈置在一個或多個IC封裝基體之數個焊墊對面的一焊料潤濕材料膜,並且該施加的雷射能量可選擇性地掃描到在該等數個焊墊對面的該轉移材料膜上的位置。
在實例17中,實例14至15之一或任意組合的該技術主題可選擇性地包括被佈置在一個或多個IC封裝基體之 數個焊墊對面的一焊料潤濕材料膜,其中該焊料潤濕材料膜和該等一個或多個IC封裝基體可相對於該雷射能量源移動以定位一焊墊和焊料潤濕材料到該施加之雷射能量的對面。
在實例18中,用於把該IC晶粒的該焊料凸塊接合到實例13至17之任一IC封裝基體的該焊料潤濕突出部分的該等構件可選擇性地包括一自動熱壓縮接合(TCB)台,其被配置成把該IC晶粒接合到該IC封裝基體。
實例19可包括技術主題,或可選擇性地與實例1至18之一或任意組合相結合來包括技術主題(諸如一電子組件,其包括一積體電路(IC)封裝基體,在該IC封裝基體上的數個焊墊,其中一焊墊包括一用於電氣連接到一IC晶粒的表面、以及焊料潤濕材料的一個或多個突出部分,其從該等數個焊墊的一個或多個的該表面往外延伸。
在實例20中,實例19的該技術主題可選擇性地包括一焊料潤濕突出部分,其包括一基部和一頂點,其中該基部的寬度大於該頂點的寬度。
在實例21中,請求項20的該技術主題可選擇性地包括具有一百微米(100微米)或更小之基部寬度的一焊料潤濕突出部分。
在實例22中,實例19至21之一或任意組合的該技術主題可選擇性地包括一焊料潤濕突出部分,其具有一寬度小於該IC封裝基體的該焊墊的該表面寬度。
在實例23中,實例19至22之一或任意組合的該技 術主題可選擇性地包括一焊料潤濕突出部分,其包括鎢、金、銅、或銀的至少一種。
在實例24中,實例19至23之一或任意組合的該技術主題可選擇性地包括一包含有焊膏的焊料潤濕突出部分。
在實例25中,實例19至23之一或任意組合的該技術主題可選擇性地包括被接合到該IC封裝基體的IC晶粒,其中該IC晶粒包括一處理器和一記憶體的至少一個。
這些非限制性實例的每一個可以各自獨立,或者可以與其他實例的一個或多個以各種排列或組合的方式進行結合。
以上的詳細描述包括參考到該等附圖,其形成該詳細描述的一部分。以說明的方式,該等附圖展示出在其中本發明的內容可以實踐的具體實施例。這些實施例也在本文中被稱為「實例」。在本文和透過引用被併入的任何文件之間有用法不一致的情況下,在該(等)被併入之參考中的該用法應被視為是本文件用法的補充;對於無法協調的不一致性,由在本文中的該用法來掌控。
在本文中,如在專利文獻中常見的,術語「一」或「一個」被使用來包含一個或一個以上的,獨立於任何其他實例或「至少一個」或「一個或多個」的使用。在本文中,術語「或」被使用來意指一非互斥的或,使得「A或B」包括「A但非B」、「B但非A」、以及「A且B」,除非另有表明。在所附的權利請求項中,術語「包含有」以及「其 中」被使用成與該等對應的術語「包括」和「在其中」有普通英語上的等價。另外,在以下的權利請求項中,術語「包括」和「包含有」是開放式的,即,在此一術語在一請求項中使用之後,除了那些被列出者之外,包含有額外元素的一系統、裝置、物品、或製程仍然被認為是落入到該請求項的範疇之內。此外,在以下的請求項中,術語「第一」,「第二」、和「第三」、等等僅被使用作為標籤,並不意圖在它們的物件上強加數值的要求。
本文所描述的方法實例可以被機器或電腦實現,至少一部分是。一些實例可以包括一被編碼有指令的電腦可讀取媒體或機器可讀取媒體,該等指令可操作以配置一電子裝置來執行如在上述該等實例中所描述的方法。如此方法的一種實現方式可以包括程式碼,諸如微程式碼、組合語言程式碼、一高階語言程式碼、等等。這樣的程式碼可以包括用於執行各種方法的電腦可讀取指令。該程式碼可以構成電腦程式產品的部分。此外,該程式碼可以在執行期間或在其他時間上被有形地儲存在一個或多個依電性或非依電性電腦可讀取媒體上。這些電腦可讀取媒體可以包括,但不侷限於,硬碟、可移除式磁碟、可移除式光碟(舉例來說,光碟裝置和數位視訊光碟)、磁帶匣、記憶卡或記憶棒、隨機存取記憶體器(RAM)、唯讀記憶體(ROM)、和類似物。在一些實例中,一載波媒體可以攜帶實現該方法的程式碼。術語「載波媒體」可被使用來表示在其上程式碼被傳送的載波。
以上的描述旨在說明,而不是限制性的。舉例來說,以上所述的實例(或其一個或多個方面)可被彼此組合地使用。諸如一本領域的普通技術人員中一旦閱讀了以上的描述,其他的實施例可被使用。摘要被提供以符合37 C.F.R.§1.72(b),以讓該讀者可快速地確定該技術揭露的性質。本發明的提交被理解為它不會被使用來解讀或限制該等權利請求項的範疇或含義。另外,在上述的較佳實施例之詳細說明中,各種特徵可以被組合在一起以流線化本發明。這不應被理解為意指一未被宣稱權利的公開特徵對於任何的請求項是必要的。反而,本發明的技術主題可以存在於少於一特定公開實施例的所有特徵。因此,以下的權利請求項因此被結合到該較佳實施例之詳細說明中,每一個權利請求項獨立地作為一單獨實施例。本發明的範疇應當參照所附權利請求項來被決定,連同被這些權利請求項所給與權力之等價物的該全部範圍。
405‧‧‧晶粒
410‧‧‧焊料凸塊
415‧‧‧焊墊
420‧‧‧封裝基體
425‧‧‧焊墊
430‧‧‧焊料潤濕材料

Claims (20)

  1. 一種用於將一積體電路(IC)附接到一IC封裝基體的方法,該方法包含下列步驟:在一IC晶粒的一焊墊上形成一焊料凸塊;在一IC封裝基體的一焊墊上形成一焊料潤濕突出部分;以及把該IC晶粒的該焊料凸塊接合到該IC封裝基體的該焊料潤濕突出部分。
  2. 如請求項1之方法,其中在該IC封裝基體的該焊墊上形成一焊料潤濕突出部分之步驟包括沉積到該IC封裝基體的該焊墊上之該焊料潤濕突出部分的雷射直接沉積。
  3. 如請求項2之方法,其中該焊料潤濕突出部分的雷射直接沉積包括下列步驟:在該IC封裝基體之該焊墊對面佈置一焊料潤濕材料膜;以及施加雷射能量到該焊料潤濕材料膜以將該焊料潤濕材料轉移到該IC封裝基體的該焊墊。
  4. 如請求項2之方法,其中該焊料潤濕突出部分的雷射直接沉積包括下列步驟:在該IC封裝基體的該焊墊對面佈置一側具有焊料潤濕材料且另一側具有透明材料的一膜,以及施加雷射能量到該膜的該透明側。
  5. 如請求項3之方法,其中佈置一焊料潤濕材料膜之步驟 包括在一個或多個IC封裝基體的複數個焊墊對面佈置該焊料潤濕材料膜,並且其中施加雷射能量源之步驟包括用一雷射能量源掃描於該等數個焊墊對面之該焊料潤濕材料膜上的數個位置,以及將雷射能量之脈衝施加至該焊料潤濕材料膜以將該焊料潤濕材料轉移到該等數個焊墊。
  6. 如請求項3之方法,其中佈置一焊料潤濕材料膜之步驟包括在一個或多個IC封裝基體之複數個焊墊對面佈置該焊料潤濕材料膜,並且其中施加雷射能量源之步驟包括掃描該等複數個通過雷射能量源的接合處以及將一雷射能量的脈衝施加至該焊料潤濕材料膜以將該焊料潤濕材料轉移到一焊墊之上,當它被定位在該雷射能源的對面時。
  7. 如請求項2之方法,包括在該焊料潤濕突出部分的雷射沉積之前施加焊劑到該IC封裝基體的該焊墊。
  8. 如請求項1之方法,其中在該IC封裝基體的該焊墊上形成一焊料潤濕突出部分之步驟包括寫入到該IC封裝基體的該焊墊上之該焊料潤濕突出部分的雷射直接寫入。
  9. 如請求項1之方法,其中在該IC封裝基體的該焊墊上形成一焊料潤濕突出部分之步驟包括下列其中一者:將焊料潤濕材料引線嵌柱焊接到該焊墊、附接一焊料潤濕微球到該焊墊、附接一焊料潤濕微點到該焊墊、將該焊料潤濕材料焊料噴出到該焊墊、或射出成形該焊料潤濕材料到該焊墊。
  10. 如請求項1之方法,其中在該IC封裝基體的該焊墊上形成一焊料潤濕突出部分之步驟包括下列其中至少一者:焊膏列印該焊料潤濕突出部分到該焊墊上,或電鍍該焊料潤濕突出部分到該焊墊上。
  11. 如請求項1之方法,其中把該IC晶粒的該焊料凸塊接合到該IC封裝基體的該焊料潤濕突出部分之步驟包括加熱該焊料凸塊以形成一熔融的焊料凸塊,以及使該熔融的焊料凸塊與該焊料潤濕突出部分接觸。
  12. 如請求項1之方法,其中把該IC晶粒的該焊料凸塊接合到該IC封裝基體的該焊料潤濕突出部分之步驟包括加熱該焊料凸塊以形成一熔融的焊料凸塊,以及按壓該IC晶粒的熔融焊料凸塊到該IC封裝基體的該焊料潤濕突出部分。
  13. 一種電子組件,其包括:一積體電路(IC)封裝基體;在該IC封裝基體上的數個焊墊,其中一焊墊包括用於電氣連接到一IC晶粒的一表面;以及焊料潤濕材料的一個或多個突出部分,其延伸遠離該等數個焊墊的一個或多個的該表面。
  14. 如請求項13之電子組件,其中一焊料潤濕材料包括一基部和一頂點,其中該基部的寬度大於該頂點的寬度。
  15. 如請求項14之電子組件,其中該基部具有一百微米(100微米)或更小之一寬度。
  16. 如請求項13之電子組件,其中一焊料潤濕突出部分的寬 度小於該IC封裝基體之該焊墊的該表面的寬度。
  17. 如請求項13之電子組件,其包括被接合到該IC封裝基體的該IC晶粒,其中該IC晶粒包括一處理器和一記憶體中的至少一個。
  18. 一種用於形成IC互連的裝置,該裝置包含:一焊料凸塊形成台,其被配置成在一積體電路(IC)晶粒的一焊墊上形成一焊料凸塊;一自動雷射直接沉積台,其被配置成在一IC封裝基體的一焊墊上形成一焊料潤濕突出部分;以及一自動熱壓縮接合(TCB)台,其被配置成把該IC晶粒接合到該IC封裝基體,其被配置成把該IC晶粒的該焊料凸塊接合到該IC封裝基體的該焊料潤濕突出部分。
  19. 如請求項18之裝置,其中該雷射直接沉積台包括:一焊料潤濕材料膜,其在一透明基體上並被佈置在該IC封裝基體的該焊墊對面;以及一雷射能量源,其用以施加雷射能量到該透明基體來把該焊料潤濕材料轉移到該IC封裝基體的該焊墊上。
  20. 如請求項19之裝置,其中該焊料潤濕材料膜被佈置在一個或多個IC封裝基體之數個焊墊對面,並且其中該施加的雷射能量可掃描到在該等數個焊墊對面的該轉移材料膜上的位置。
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