CN109059765B - 位置检测装置 - Google Patents

位置检测装置 Download PDF

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Publication number
CN109059765B
CN109059765B CN201810939318.4A CN201810939318A CN109059765B CN 109059765 B CN109059765 B CN 109059765B CN 201810939318 A CN201810939318 A CN 201810939318A CN 109059765 B CN109059765 B CN 109059765B
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China
Prior art keywords
diffraction grating
patterns
pattern
interval
substrate
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CN201810939318.4A
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Chinese (zh)
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CN109059765A (zh
Inventor
佐藤浩司
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Canon Inc
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Canon Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G01B11/25—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures by projecting a pattern, e.g. one or more lines, moiré fringes on the object
    • G01B11/254—Projection of a pattern, viewing through a pattern, e.g. moiré
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7038—Alignment for proximity or contact printer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7049—Technique, e.g. interferometric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Mechanical Engineering (AREA)
  • Optical Transform (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CN201810939318.4A 2014-06-27 2015-06-26 位置检测装置 Active CN109059765B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2014-133245 2014-06-27
JP2014133245 2014-06-27
JP2015116883A JP6341883B2 (ja) 2014-06-27 2015-06-09 位置検出装置、位置検出方法、インプリント装置及び物品の製造方法
JP2015-116883 2015-06-09
CN201510369385.3A CN105222705B (zh) 2014-06-27 2015-06-26 位置检测装置、位置检测方法、压印装置及物品的制造方法

Related Parent Applications (1)

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CN201510369385.3A Division CN105222705B (zh) 2014-06-27 2015-06-26 位置检测装置、位置检测方法、压印装置及物品的制造方法

Publications (2)

Publication Number Publication Date
CN109059765A CN109059765A (zh) 2018-12-21
CN109059765B true CN109059765B (zh) 2021-06-11

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CN201810939318.4A Active CN109059765B (zh) 2014-06-27 2015-06-26 位置检测装置
CN201510369385.3A Active CN105222705B (zh) 2014-06-27 2015-06-26 位置检测装置、位置检测方法、压印装置及物品的制造方法
CN201810126879.2A Active CN108180836B (zh) 2014-06-27 2015-06-26 位置检测装置

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CN201510369385.3A Active CN105222705B (zh) 2014-06-27 2015-06-26 位置检测装置、位置检测方法、压印装置及物品的制造方法
CN201810126879.2A Active CN108180836B (zh) 2014-06-27 2015-06-26 位置检测装置

Country Status (4)

Country Link
US (2) US10337856B2 (enrdf_load_stackoverflow)
JP (1) JP6341883B2 (enrdf_load_stackoverflow)
KR (4) KR20160001693A (enrdf_load_stackoverflow)
CN (3) CN109059765B (enrdf_load_stackoverflow)

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JP6341883B2 (ja) 2014-06-27 2018-06-13 キヤノン株式会社 位置検出装置、位置検出方法、インプリント装置及び物品の製造方法
JP6701263B2 (ja) * 2014-06-27 2020-05-27 キヤノン株式会社 位置検出装置、位置検出方法、インプリント装置及び物品の製造方法
JP6685821B2 (ja) * 2016-04-25 2020-04-22 キヤノン株式会社 計測装置、インプリント装置、物品の製造方法、光量決定方法、及び、光量調整方法
JP6884515B2 (ja) * 2016-05-10 2021-06-09 キヤノン株式会社 位置検出方法、インプリント装置及び物品の製造方法
JP6863836B2 (ja) * 2017-06-28 2021-04-21 キオクシア株式会社 ナノインプリント用テンプレート及び集積回路装置の製造方法
JP6937203B2 (ja) * 2017-09-14 2021-09-22 キオクシア株式会社 インプリント装置、インプリント方法および半導体装置の製造方法
CN111095043B (zh) * 2017-12-27 2023-03-10 株式会社日立高新技术 凹面衍射光栅的制造方法、凹面衍射光栅及使用其的分析装置
JP7030569B2 (ja) * 2018-03-12 2022-03-07 キヤノン株式会社 位置検出装置、位置検出方法、インプリント装置及び物品の製造方法
JP7182904B2 (ja) * 2018-05-31 2022-12-05 キヤノン株式会社 検出装置、インプリント装置、平坦化装置、検出方法及び物品製造方法
JP2020027000A (ja) * 2018-08-10 2020-02-20 株式会社エンプラス レンズマーカ画像の補正方法、補正装置、プログラム、および記録媒体
JP7222702B2 (ja) * 2018-12-26 2023-02-15 三星電子株式会社 ウエハの接合方法、半導体装置の製造方法、及びその装置
CN109751959B (zh) * 2019-01-17 2020-10-30 深圳市华星光电半导体显示技术有限公司 线宽测量方法
CN111752112B (zh) * 2019-03-27 2021-09-10 上海微电子装备（集团）股份有限公司 掩膜对准标记组合、掩膜对准系统、光刻装置及其方法
US11748869B1 (en) * 2019-07-08 2023-09-05 Intel Corporation Image-based overlay targets incorporating features for pattern recognition and moire fringe patterns for measurement
US20230064193A1 (en) * 2020-01-29 2023-03-02 Asml Netherlands B.V. Metrology method and device for measuring a periodic structure on a substrate
CN114688972B (zh) * 2020-12-31 2024-04-02 深圳中科飞测科技股份有限公司 检测设备及其检测方法
US12222659B2 (en) * 2023-01-18 2025-02-11 Applied Materials, Inc. Metrology system for packaging applications
CN118448324B (zh) * 2024-03-27 2025-06-06 深圳稳顶聚芯技术有限公司 对准装置及对准方法

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Publication number Publication date
CN108180836A (zh) 2018-06-19
US20150377614A1 (en) 2015-12-31
KR20190034178A (ko) 2019-04-01
US10337856B2 (en) 2019-07-02
JP2016027325A (ja) 2016-02-18
US20190285403A1 (en) 2019-09-19
CN105222705A (zh) 2016-01-06
KR101963636B1 (ko) 2019-04-01
CN109059765A (zh) 2018-12-21
CN108180836B (zh) 2021-06-15
KR20200038223A (ko) 2020-04-10
JP6341883B2 (ja) 2018-06-13
US10989527B2 (en) 2021-04-27
KR20160001693A (ko) 2016-01-06
CN105222705B (zh) 2018-08-31
KR20170126833A (ko) 2017-11-20
KR102277746B1 (ko) 2021-07-16

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