CN108962766A - 封装结构及其形成方法 - Google Patents
封装结构及其形成方法 Download PDFInfo
- Publication number
- CN108962766A CN108962766A CN201810796944.2A CN201810796944A CN108962766A CN 108962766 A CN108962766 A CN 108962766A CN 201810796944 A CN201810796944 A CN 201810796944A CN 108962766 A CN108962766 A CN 108962766A
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- Prior art keywords
- layer
- chip
- encapsulating structure
- adhesive layer
- improvement
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Abstract
一种封装结构及其形成方法,其中封装方法包括:提供基板,所述基板表面具有粘合层;在所述粘合层表面形成改善层,所述改善层内具有开口,所述开口底部暴露出粘合层表面;提供芯片,所述芯片包括非功能面;贴装芯片,使所述非功能面与开口底部的粘合层贴合。所述方法形成的封装结构的性能较好。
Description
技术领域
本发明涉及封装领域,尤其涉及一种芯片的封装结构及其形成方法。
背景技术
随着集成电路制造业的快速发展,人们对集成电路的封装技术的要求也不断提高,现有的封装技术包括球栅阵列封装(BGA)、芯片尺寸封装(CSP)、圆片级封装(WLP)、三维封装(3D)和系统封装(SiP)。其中,圆片级封装(WLP)由于其出色的优点逐渐被大部分的半导体制造者所采用,它的全部或者大部分工艺步骤是在已完成前工序的硅圆片上完成的,最后将圆片直接切割成分离的独立器件。圆片级封装具有如下独特优势:封装加工效率高,可以多个圆片同时加工;具有倒装芯片封装的优点,即:轻、薄、短、小;与前工序相比,只是增加了引脚重新布线(RDL)和凸点制作两个工序,其余全部是传统工艺;减少了传统封装中的多次测试。因此,世界上各大型IC封装公司纷纷投入圆片级封装的研究、开发和生产。
然而,现有圆片级封装技术仍存在较多的问题,使得封装结构的性能较差。
发明内容
本发明解决的技术问题是提供一种封装结构及其形成方法,以提高封装结构的性能。
为解决上述技术问题,本发明提供一种封装结构的形成方法,包括:提供基板,所述基板表面具有粘合层;在所述粘合层表面形成改善层,所述改善层内具有开口,所述开口底部暴露出粘合层表面;提供芯片,所述芯片包括非功能面;贴装芯片,使所述非功能面与开口底部的粘合层贴合。
可选的,所述芯片包括与非功能面相对的功能面;所述芯片的功能面齐平于或者低于改善层表面;或者,所述芯片的功能面高于改善层表面。
可选的,所述粘合层包括:紫外粘合胶、丙烯酸压敏胶或者环氧树脂压敏胶。
可选的,所述改善层和开口的形成方法包括:在所述粘合层表面形成改善膜;对所述改善膜进行曝光显影,形成所述改善层,且所述改善层内具有开口。
可选的,所述改善膜的材料包括光刻胶。
可选的,贴装所述芯片之后,还包括:在所述改善层表面、以及芯片的侧壁和功能面上形成塑封层;对所述塑封层进行减薄处理,直至暴露出功能面;在所述功能面上形成布线层和位于布线层表面的钝化层,所述钝化层内具有暴露出布线层表面的焊料开口;在所述焊料开口内形成焊球;形成所述焊球之后,去除所述粘合层和基板,暴露出芯片的非功能面和改善层的表面;去除所述粘合层和基板之后,进行切割处理,形成芯片结构。
可选的,所述芯片结构不包括改善层;或者,所述芯片结构包括部分改善层。
可选的,去除所述粘合层和基板之后,进行切割处理之前,还包括:去除所述改善层。
相应的,本发明还提供一种封装结构,包括:基板,所述基板表面具有粘合层;位于所述粘合层表的改善层,所述改善层内具有开口,所述开口底部暴露出粘合层表面;芯片,所述芯片包括非功能面;所述非功能面与开口底部的粘合层贴合。
可选的,所述粘合层包括:紫外粘合胶、丙烯酸压敏胶或者环氧树脂压敏胶;所述改善层的材料包括光刻胶。
可选的,所述芯片包括与非功能面相对的功能面;所述芯片的功能面齐平于或者低于改善层表面;或者,所述芯片的功能面高于改善层表面。
与现有技术相比,本发明实施例的技术方案具有以下有益效果:
本发明技术方案提供的封装结构的形成方法中,所述改善层内具有开口,所述开口用于容纳后续芯片,且所述开口侧壁的改善层能够防止芯片发生偏移,因此,有利于提高封装结构的性能。
附图说明
图1是一种封装结构的结构示意图;
图2至图13是本发明一实施例的封装结构的形成方法的各步骤的结构示意图;
图14是本发明另一实施例的结构示意图;
图15至图16是本发明再一实施例的封装结构的形成方法的各步骤的结构示意图。
具体实施方式
正如背景技术所述,封装结构的性能较差。
图1是一种封装结构的结构示意图。
请参考图1,提供基底100,所述基底100表面具有粘合层101;提供芯片102,所述芯片102包括非功能面1;贴装所述芯片102,使所述非功能面1与粘合层101贴合。
上述方法中,所述芯片102的材料包括硅,硅的热膨胀系数较小,而所述粘合层101的材料的热膨胀系数较芯片102大的多,则在后续高温工艺过程中,所述粘合层101和芯片102的热膨胀程度不同,使得芯片102易相对于粘合层101发生偏移,不利于提高封装结构的性能。
为解决所述技术问题,本发明提供了一种封装结构的形成方法,通过在所述粘合层顶部形成改善层,所述改善层内具有开口,所述开口用于限定芯片的位置,使得芯片不易发生相对位移,有利于提高封装结构的性能。
为使本发明的上述目的、特征和有益效果能够更为明显易懂,下面结合附图对本发明的具体实施例做详细的说明。
图2至图13是本发明一实施例的封装结构的形成方法的各步骤的结构示意图。
请参考图2,提供基板200,所述基板200表面具有粘合层201。
所述基板200的材料包括:玻璃、陶瓷、金属或者聚合物。
所述基板200的形状包括圆形、矩形或者三角形。
所述粘合层201用于后续将芯片粘附与基板200上。
在本实施例中,所述粘合层201的材料为紫外粘合胶,所述紫外粘合胶在未经过紫外照射时粘性很高,而经过紫外光照射后材料内的交联化学键被打断导致粘性大幅下降或消失,有利于后续剥离粘合层201和基板200。
在其他实施例中,所述粘合层包括:丙烯酸压敏胶或者环氧树脂压敏胶。
所述粘合层201的形成工艺包括:旋涂工艺、喷涂工艺、滚压工艺、印刷工艺、非旋转涂覆工艺、热压工艺、真空压合工艺或者压力压合工艺。
所述粘合层201的材料具有第一热膨胀系数,所述第一热膨胀系数较高。
请参考图3,在所述粘合层201表面形成改善膜202。
所述改善膜202的材料包括:光刻胶,所述改善膜202的形成工艺包括:旋涂工艺或者印刷工艺。
所述改善膜202用于后续形成改善层。所述改善膜202具有第二热膨胀系数,且第二热膨胀系数与第一热膨胀系数之间的差值落在预设范围内,具体的,预设范围为:-50~50,使得在后续高温工艺过程中,所述改善层和粘合层201之间不易发生相对位移,而后续改善层内的开口用于限制芯片发生位移,因此,有利于减少封装结构发生偏移或者翘曲。
在本实施例中,所述改善膜202的厚度等于后续芯片的高度。
在其他实施例中,所述改善膜的厚度小于或者大于芯片的厚度。
请参考图4,对所述改善膜202(见图3)进行曝光显影,形成改善层220,所述改善层220内具有开口203,所述开口203底部暴露出粘合层201的表面。
所述改善层220是由改善膜202形成,而第二热膨胀系数与第一热膨胀系数之间的差值落在预设范围内,则在后续高温工艺过程中,所述改善层220和粘合层201之间不易发生相对位移。
并且,所述开口203用于限定后续芯片的位置,使得芯片不易发生偏移。综上,所述芯片、改善层220和粘合层201之间均不易发生相对位移,有利于减少封装结构发生偏移或者翘曲。
请参考图5,提供芯片204,所述芯片204包括相对的功能面12和非功能面11;贴装所述芯片204,使非功能面11与开口203底部的粘合层201贴合。
所述芯片204的材料包括硅,所述芯片204的热膨胀系数为2.2~2.4。所述功能面12内具有焊盘(图中未示出),所述焊盘用于将芯片204内的电信号输出。
所述芯片204的厚度为:20微米~100微米。
所述芯片204通过粘合层201贴装于基板200上。所述芯片204位于开口203内,所述开口203侧壁的改善层220用于限制芯片204的位置,防止芯片204与改善层220和粘合层201之间发生相对位移,有利于减少封装结构发生偏移或者翘曲。
请参考图6,在所述改善层220表面、以及芯片204的侧壁和功能面12上形成塑封层205。
在本实施例中,所述塑封层205的材料为环氧树脂,所述环氧树脂的密封性能好,塑型容易,是形成塑封层205较佳的材料。
在其他实施例中,所述塑封层的材料为塑封材料,所述塑封材料包括聚酰亚胺树脂、苯并环丁烯树脂、聚苯并恶唑树脂、聚对苯二甲酸丁二酯、聚碳酸酯、聚对苯二甲酸乙二醇酯、聚乙烯、聚丙烯、聚烯烃、聚氨酯、聚烯烃、聚醚砜、聚酰胺、聚亚氨酯、乙烯-醋酸乙烯共聚物、聚乙烯醇。
在本实施例中,所述塑封层205的形成工艺为注塑工艺(injection molding)。在其他实施例中,所述塑封层的形成工艺包括:转塑工艺(transfer molding)或丝网印刷工艺。
采用注塑工艺形成塑封层205的方法包括:提供模具;在所述模具中填充塑封材料,使所述塑封材料包覆所述芯片204;对所述塑封材料进行升温固化,形成塑封层205。
所述塑封层205既能够保护芯片204又可作为后续工艺的承载体。
在形成所述塑封层205的过程中,尽管所述芯片204材料的热膨胀系数与改善层220和粘合层201的热膨胀系数之间的差值较大,但是,所述芯片204位于开口203内,所述开口203在升温固化的过程中用于限制芯片204与改善层220和粘合层201发生相对位移。
并且,改善层220与粘合层201的热膨胀系数之间的差值落在预设范围之内,则在所述升温固化过程中,所述改善层220和粘合层201之间不易发生相对位移。综上、芯片204、改善层220和粘合层201之间不易发生相对位移,有利于减少封装结构发生偏移或者翘曲。
请参考图7,对所述塑封层205进行减薄处理,直至暴露出功能面12。
对所述塑封层205进行减薄处理,暴露出功能面12,有利于后续形成的布线层与芯片204实现电连接。
请参考图8,对所述塑封层205进行减薄处理之后,在所述功能面12表面形成布线层206。
所述布线层206的材料为金属,如:铝、铜、锡、镍、金或者银。
所述布线层206的形成工艺包括蒸镀工艺、溅射工艺、电镀工艺或者化学镀工艺。
所述布线层206底部与焊盘204a顶部电连接,所述布线层206顶部与后续焊球之间的电连接。
请参考图9,在所述改善层220顶部和布线层206的侧壁形成钝化层207,所述钝化层207内具有暴露出布线层206顶部的焊料开口208。
所述钝化层207的材料包括:聚酰亚胺、聚对苯撑苯并双恶唑或光敏苯并环丁烯,所述钝化层207的形成工艺包括:旋涂工艺或者印刷工艺。
所述钝化层207暴露出部分布线层206,有利于后续的焊球与布线层206电连接。
所述焊料开口208用于后续容纳焊球。
请参考图10,在所述焊料开口208(见图10)内形成焊球209。
所述焊球209包括金锡焊球、银锡焊球或者铜锡焊球。
在本实施例中,所述焊球209为金锡焊球,所述金锡焊球的形成方法包括:在所述焊料开口208内形成金锡层;形成所述金锡层之后,进行高温回流工艺,使金锡层回流成球状,降温后形成金锡焊球。
请参考图11,形成所述焊球209之后,去除所述粘合层201(见图10)和基板200(见图10)。
在本实施例中,所述粘合层201的材料为紫外粘合胶,去除所述基板200(见图10)和粘合层201(见图10)的方法包括:利用紫外光照射照射,使粘合层201的粘性降低,从而使得粘合层201和基板200剥离。
请参考图12,去除所述粘合层201和基板200之后,去除所述改善层220(见图11)。
去除所述改善层220的工艺包括干法刻蚀工艺和湿法刻蚀工艺中的一种或者两种组合。
请参考图13,去除所述改善层220之后,进行切割处理,形成芯片结构250。
去除所述改善层220之后,相邻芯片204之间仅具有钝化层207,因此,所述切割处理切断的仅为钝化层207。
图14是本发明另一实施例的封装结构的结构示意图。
请参考图14,去除所述基板200和粘合层201之后,进行切割处理,形成芯片结构300。
需要说明的是,图14是在图11基础上后续步骤的结构示意图。
在本实施例中,所述芯片结构300不包含改善层220,则后续无需去除改善层220,使得工艺步骤较少,有利于降低工艺的复杂度。
图15至图16本发明再一实施例的封装结构的形成方法的各步骤的结构示意图。
请参考图15,去除所述基板200和粘合层201之后,进行切割处理,形成芯片结构400。
需要说明的是,图15是在图11基础上后续步骤的结构示意图。
在本实施例中,所述芯片结构400包含部分改善层220。
请参考图16,进行切割处理之后,去除所述改善层220。
去除所述改善层220的工艺包括干法刻蚀工艺和湿法刻蚀工艺中的一种或者两种组合。
相应的,本发明还提供一种封装结构,请参考图5,包括:
基板200,所述基板200表面具有粘合层201;
位于所述粘合层201表面的改善层220,所述改善层220内具有开口203(见图4),所述开口203底部暴露出粘合层201表面;
位于开口203内的芯片204,所述芯片204包括非功能面11,所述非功能面11与开口203底部的粘合层201贴合。
所述粘合层201包括:紫外粘合胶、丙烯酸压敏胶或者环氧树脂压敏胶;所述改善层的材料包括光刻胶。
所述芯片204包括与非功能面11相对的功能面12;所述芯片204的功能面12齐平于或者低于改善层220表面;或者,所述芯片204的功能面12高于改善层220表面。
虽然本发明披露如上,但本发明并非限定于此。任何本领域技术人员,在不脱离本发明的精神和范围内,均可作各种更动与修改,因此本发明的保护范围应当以权利要求所限定的范围为准。
Claims (11)
1.一种封装结构的形成方法,其特征在于,包括:
提供基板,所述基板表面具有粘合层;
在所述粘合层表面形成改善层,所述改善层内具有开口,所述开口底部暴露出粘合层表面;
提供芯片,所述芯片包括非功能面;
贴装芯片,使所述非功能面与开口底部的粘合层贴合。
2.如权利要求1所述的封装结构的形成方法,其特征在于,所述芯片包括与非功能面相对的功能面;所述芯片的功能面低于或者齐平于改善层表面;
或者,所述芯片的功能面高于改善层表面。
3.如权利要求1所述的封装结构的形成方法,其特征在于,所述粘合层包括:紫外粘合胶、丙烯酸压敏胶或者环氧树脂压敏胶。
4.如权利要求1所述的封装结构的形成方法,其特征在于,所述改善层和开口的形成方法包括:在所述粘合层表面形成改善膜;对所述改善膜进行曝光显影,形成所述改善层,所述改善层内具有开口。
5.如权利要求4所述的封装结构的形成方法,其特征在于,所述改善膜的材料包括光刻胶。
6.如权利要求2所述的封装结构的形成方法,其特征在于,贴装所述芯片之后,还包括:在所述改善层顶部、以及芯片的侧壁和功能面上形成塑封层;对所述塑封层进行减薄处理,直至暴露出功能面;在所述功能面上形成布线层和位于布线层表面的钝化层,所述钝化层内具有暴露出布线层顶部的焊料开口;在所述焊料开口内形成焊球;形成所述焊球之后,去除所述粘合层和基板,暴露出芯片的非功能面和改善层的表面;去除所述粘合层和基板之后,进行切割处理,形成芯片结构。
7.如权利要求6所述的封装结构的形成方法,其特征在于,所述芯片结构不包括改善层;或者,所述芯片结构包括部分改善层。
8.如权利要求6所述的封装结构的形成方法,其特征在于,去除所述粘合层和基板之后,进行切割处理之前,还包括:去除所述改善层。
9.一种封装结构,其特征在于,包括:
基板,所述基板表面具有粘合层;
位于所述粘合层表面的改善层,所述改善层内具有开口,所述开口底部暴露出粘合层表面;
位于所述开口内的芯片,所述芯片包括非功能面,所述非功能面与开口底部的粘合层贴合。
10.如权利要求9所述的封装结构,其特征在于,所述粘合层包括:紫外粘合胶、丙烯酸压敏胶或者环氧树脂压敏胶;所述改善层的材料包括光刻胶。
11.如权利要求9所述的封装结构,其特征在于,所述芯片包括与非功能面相对的功能面;所述芯片的功能面齐平于或者低于改善层表面;或者,所述芯片的功能面高于改善层表面。
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