CN1088882C - 光接收部件及采用该部件的静电复印装置 - Google Patents
光接收部件及采用该部件的静电复印装置 Download PDFInfo
- Publication number
- CN1088882C CN1088882C CN95119434A CN95119434A CN1088882C CN 1088882 C CN1088882 C CN 1088882C CN 95119434 A CN95119434 A CN 95119434A CN 95119434 A CN95119434 A CN 95119434A CN 1088882 C CN1088882 C CN 1088882C
- Authority
- CN
- China
- Prior art keywords
- receiving member
- layer
- light
- atoms
- light receiving
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 125000004433 nitrogen atom Chemical group N* 0.000 claims abstract description 25
- 125000004430 oxygen atom Chemical group O* 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 9
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract 12
- 230000001747 exhibiting effect Effects 0.000 claims abstract 2
- 229910052796 boron Inorganic materials 0.000 claims description 20
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 19
- 230000000737 periodic effect Effects 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 125000005843 halogen group Chemical group 0.000 claims description 13
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 13
- 230000004888 barrier function Effects 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 2
- 230000000903 blocking effect Effects 0.000 claims 1
- 239000002019 doping agent Substances 0.000 claims 1
- 239000002245 particle Substances 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 31
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 14
- 125000004429 atom Chemical group 0.000 description 79
- 238000012360 testing method Methods 0.000 description 46
- 239000007789 gas Substances 0.000 description 33
- 229910052799 carbon Inorganic materials 0.000 description 28
- 150000001721 carbon Chemical group 0.000 description 24
- 238000003384 imaging method Methods 0.000 description 20
- 230000008569 process Effects 0.000 description 12
- 230000000452 restraining effect Effects 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 7
- 239000011159 matrix material Substances 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 7
- 238000010023 transfer printing Methods 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- 239000000969 carrier Substances 0.000 description 5
- 238000005266 casting Methods 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000001914 filtration Methods 0.000 description 4
- 230000014509 gene expression Effects 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 4
- 150000002367 halogens Chemical class 0.000 description 4
- 230000006698 induction Effects 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- 239000013543 active substance Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000011669 selenium Substances 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000003487 electrochemical reaction Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000000739 chaotic effect Effects 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052699 polonium Inorganic materials 0.000 description 1
- HZEBHPIOVYHPMT-UHFFFAOYSA-N polonium atom Chemical compound [Po] HZEBHPIOVYHPMT-UHFFFAOYSA-N 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 230000004304 visual acuity Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/06—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being organic
- G03G5/07—Polymeric photoconductive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/08235—Silicon-based comprising three or four silicon-based layers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Photoreceptors In Electrophotography (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP318236/94 | 1994-12-21 | ||
| JP31823694 | 1994-12-21 | ||
| JP319861/95 | 1995-12-08 | ||
| JP31986195A JP3483375B2 (ja) | 1994-12-21 | 1995-12-08 | 光受容部材及びそれを用いた電子写真装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1133470A CN1133470A (zh) | 1996-10-16 |
| CN1088882C true CN1088882C (zh) | 2002-08-07 |
Family
ID=26569300
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN95119434A Expired - Fee Related CN1088882C (zh) | 1994-12-21 | 1995-12-21 | 光接收部件及采用该部件的静电复印装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5876886A (enExample) |
| EP (1) | EP0718698B1 (enExample) |
| JP (1) | JP3483375B2 (enExample) |
| KR (1) | KR0179191B1 (enExample) |
| CN (1) | CN1088882C (enExample) |
| DE (1) | DE69526047T2 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1165146A (ja) | 1997-08-22 | 1999-03-05 | Canon Inc | 電子写真用光受容部材 |
| DE60229461D1 (de) * | 2001-04-24 | 2008-12-04 | Canon Kk | Negativ-aufladbares elektrophotographisches Element |
| JP3925912B2 (ja) * | 2002-04-30 | 2007-06-06 | 株式会社リコー | 電子写真感光体、電子写真方式、画像形成装置及び画像形成装置用プロセスカートリッジ |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4788560A (en) * | 1986-12-26 | 1988-11-29 | Kabushiki Kaisha Toshiba | Multi-beam scanning system with time sharing beam control |
| DE4308496A1 (de) * | 1992-12-09 | 1994-06-16 | Samsung Electronics Co Ltd | Schaltung zum Treiben eines LED-Druckkopfes eines elektrophotographischen Gerätes |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3789777T3 (de) * | 1986-02-07 | 1999-12-02 | Canon K.K., Tokio/Tokyo | Lichtempfangselement. |
| US4818651A (en) * | 1986-02-07 | 1989-04-04 | Canon Kabushiki Kaisha | Light receiving member with first layer of A-SiGe(O,N)(H,X) and second layer of A-SiC wherein the first layer has unevenly distributed germanium atoms and both layers contain a conductivity controller |
| JP2775272B2 (ja) * | 1988-12-27 | 1998-07-16 | キヤノン株式会社 | 改良された非単結晶シリコン系光受容部材を用いた電子写真装置による画像形成方法 |
| US5358811A (en) * | 1988-12-27 | 1994-10-25 | Canon Kabushiki Kaisha | Electrophotographic method using an amorphous silicon light receiving member with a latent image support layer and a developed image support layer and insulating toner having a volume average particle size of 4.5 to 9.0 micron |
| JPH0572783A (ja) * | 1991-04-12 | 1993-03-26 | Fuji Xerox Co Ltd | 電子写真感光体 |
| DE4212230C2 (de) * | 1992-04-11 | 1996-04-11 | Licentia Gmbh | Elektrofotografisches Aufzeichnungsmaterial |
-
1995
- 1995-12-08 JP JP31986195A patent/JP3483375B2/ja not_active Expired - Fee Related
- 1995-12-19 US US08/574,920 patent/US5876886A/en not_active Expired - Lifetime
- 1995-12-19 KR KR1019950051903A patent/KR0179191B1/ko not_active Expired - Fee Related
- 1995-12-20 EP EP95120229A patent/EP0718698B1/en not_active Expired - Lifetime
- 1995-12-20 DE DE69526047T patent/DE69526047T2/de not_active Expired - Lifetime
- 1995-12-21 CN CN95119434A patent/CN1088882C/zh not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4788560A (en) * | 1986-12-26 | 1988-11-29 | Kabushiki Kaisha Toshiba | Multi-beam scanning system with time sharing beam control |
| DE4308496A1 (de) * | 1992-12-09 | 1994-06-16 | Samsung Electronics Co Ltd | Schaltung zum Treiben eines LED-Druckkopfes eines elektrophotographischen Gerätes |
Also Published As
| Publication number | Publication date |
|---|---|
| DE69526047D1 (de) | 2002-05-02 |
| CN1133470A (zh) | 1996-10-16 |
| EP0718698B1 (en) | 2002-03-27 |
| EP0718698A3 (enExample) | 1996-07-24 |
| JP3483375B2 (ja) | 2004-01-06 |
| US5876886A (en) | 1999-03-02 |
| DE69526047T2 (de) | 2002-08-22 |
| KR960024711A (ko) | 1996-07-20 |
| KR0179191B1 (ko) | 1999-04-01 |
| EP0718698A2 (en) | 1996-06-26 |
| JPH08227168A (ja) | 1996-09-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C06 | Publication | ||
| PB01 | Publication | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20020807 Termination date: 20141221 |
|
| EXPY | Termination of patent right or utility model |