CN108352324B - 用于族iiia-n装置的非蚀刻性气体冷却外延堆叠 - Google Patents

用于族iiia-n装置的非蚀刻性气体冷却外延堆叠 Download PDF

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CN108352324B
CN108352324B CN201680064897.1A CN201680064897A CN108352324B CN 108352324 B CN108352324 B CN 108352324B CN 201680064897 A CN201680064897 A CN 201680064897A CN 108352324 B CN108352324 B CN 108352324B
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group iiia
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CN108352324A (zh
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A·M·海德尔
Q·法里德
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Texas Instruments Inc
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
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    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
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    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
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    • H10D64/00—Electrodes of devices having potential barriers
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    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
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    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/05—Manufacture or treatment characterised by using material-based technologies using Group III-V technology
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
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    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/84—Combinations of enhancement-mode IGFETs and depletion-mode IGFETs

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  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
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  • Materials Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CN201680064897.1A 2015-12-28 2016-12-28 用于族iiia-n装置的非蚀刻性气体冷却外延堆叠 Active CN108352324B (zh)

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US14/981,348 US10529561B2 (en) 2015-12-28 2015-12-28 Method of fabricating non-etch gas cooled epitaxial stack for group IIIA-N devices
US14/981,348 2015-12-28
PCT/US2016/069051 WO2017117315A1 (en) 2015-12-28 2016-12-28 Non-etch gas cooled epitaxial stack for group iiia-n devices

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US20190288089A9 (en) * 2015-12-28 2019-09-19 Texas Instruments Incorporated Methods for transistor epitaxial stack fabrication
EP3655989A1 (en) * 2017-07-20 2020-05-27 Swegan AB A heterostructure for a high electron mobility transistor and a method of producing the same
CN108417488B (zh) * 2018-03-15 2021-04-06 吉林大学 一种复合绝缘结构、晶体管以及复合绝缘结构和晶体管的制作方法
US11742390B2 (en) 2020-10-30 2023-08-29 Texas Instruments Incorporated Electronic device with gallium nitride transistors and method of making same
CN113638043B (zh) * 2021-08-16 2022-06-03 季华实验室 外延炉吹扫冷却系统、方法、装置、电子设备及存储介质
CN114864380B (zh) * 2022-04-22 2025-02-21 江苏第三代半导体研究院有限公司 降低裂纹的外延方法及其外延片

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US10529561B2 (en) 2020-01-07
JP7068676B2 (ja) 2022-05-17
CN108352324A (zh) 2018-07-31
EP3398203A4 (en) 2019-01-23
EP3398203A1 (en) 2018-11-07
US20170186859A1 (en) 2017-06-29
JP2019500755A (ja) 2019-01-10
WO2017117315A1 (en) 2017-07-06

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