CN108091594A - 基板处理装置、喷射器以及基板处理方法 - Google Patents

基板处理装置、喷射器以及基板处理方法 Download PDF

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CN108091594A
CN108091594A CN201711097184.8A CN201711097184A CN108091594A CN 108091594 A CN108091594 A CN 108091594A CN 201711097184 A CN201711097184 A CN 201711097184A CN 108091594 A CN108091594 A CN 108091594A
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古泽纯和
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Abstract

本发明涉及基板处理装置、喷射器以及基板处理方法。即使在进行急剧的气体导入的情况下也能够抑制微粒被带入处理容器内。将基板处理装置构成为具有：处理容器，其用于收容多个基板；气体供给部，其用于将气体供给到所述处理容器内；以及排气部，其用于将所述处理容器内的气体排出。该基板装置还具备用于对所述气体供给部内进行扫气的扫气部，所述气体供给部连接于所述扫气部。

Description

基板处理装置、喷射器以及基板处理方法
技术领域
本发明涉及基板处理装置、喷射器以及基板处理方法。
背景技术
在通过原子层沉积(ALD：Atomic Layer deposition)等处理对基板进行成膜处理的基板处理装置中，为了向反应容器内瞬时地供给反应气体，预先在缓冲罐等中贮留供给气体，一边利用质量流量控制器(MFC)等调整流量，一边利用气体喷嘴等喷射器向反应容器内供给气体。
在日本特开2009-295729号公报(专利文献1)中公开了如下一种基板处理装置：具备用于收容并处理多片基板的反应管、用于向反应管内供给气体的气体喷嘴以及用于控制供给气体的流量的质量流量控制器，通过ALD法对基板进行成膜处理。
专利文献1：日本特开2009-295729号公报
发明内容
发明要解决的问题
然而，关于专利文献1中记载的以往的基板处理装置，直到流量稳定为止会耗费时间，在此期间存在进行急剧的气体的导入的情况。如果在气体流量稳定之前进行急剧的气体导入，则存在以下问题：附着于气体喷嘴的副产物、在气体喷嘴内形成的膜的剥离物、由于被剥离的膜的应力而在气体喷嘴内破裂的石英片等作为微粒(灰尘、污垢等)被带入反应容器内，这些微粒附着于基板。
此外，为了防止将这种微粒带入反应管内，以往进行了以下作业：将基板处理装置的包括喷射器的气体供给线拆开后清洗并重新进行组装，但维护耗费工夫。另外，虽然也能够使反应气体流入气体喷嘴来将微粒源固化(成膜)从而防止微粒的产生，但会产生气体喷嘴的气孔等阻塞而无法进行原来的气体供给的问题。
因此，本发明的目的在于提供一种即使在进行急剧的气体导入的情况下也能够抑制微粒被带入处理容器内的基板处理装置。
用于解决问题的方案
为了实现上述目的，本发明的一个方式所涉及的基板处理装置具有：处理容器，其用于收容多个基板；气体供给部，其用于向处理容器内供给气体；以及排气部，其用于排出所述处理容器内的气体，该基板处理装置还具备用于对所述气体供给部内进行扫气的扫气部，所述气体供给部连接于所述扫气部。
发明的效果
根据本发明的一个方式，即使在进行急剧的气体导入的情况下也能够抑制微粒被带入处理容器内。
附图说明
图1是本发明的实施方式所涉及的基板处理装置的概要图。
图2是表示实施方式所涉及的基板处理装置的喷射器的一例的图。
图3是表示实施方式所涉及的基板处理装置的喷射器的另一例的图。
图4是表示实施方式所涉及的基板处理装置的喷射器的另一例的图。
图5是表示实施方式所涉及的基板处理装置的喷射器的另一例的图。
图6是表示实施方式所涉及的基板处理装置的喷射器的另一例的图。
图7是表示实施方式所涉及的基板处理装置的喷射器的另一例的图。
图8是表示实施方式所涉及的基板处理方法的一例的流程图。
图9是表示在ALD处理的最初的处理步骤中供给了气体时的基板表面上的微粒分布的图，(A)表示使用了以往的基板处理装置的情况下的微粒分布，(B)表示使用了本实施方式的基板处理装置的情况下的微粒分布。
附图标记说明
1：成膜装置；4：反应容器；40：气体供给线；43：气体喷嘴；44：开闭阀；45：流量控制器；46：贮留部；47：开闭阀；48：气体喷出孔；49A：开口部；49B：开口部；50：扫气线；70：排气线；90：控制部；W：晶圆。
具体实施方式
以下，参照附图对用于实施本发明的方式进行说明。此外，在本说明书和各图中有时对相同的结构附加同一附图标记并省略说明。
图1是作为实施方式所涉及的基板处理装置的一例的成膜装置1的概要图。如图1所示，成膜装置1具有反应容器4、气体供给线40以及排气线70。成膜装置1还具有用于加热晶圆W的未图示的加热单元。
反应容器4用于收容作为基板的半导体晶圆(以下称为“晶圆W”)。反应容器4具有双重管构造，该双重管构造具有长边方向为铅垂方向的大致圆筒形，并且具备具有顶面的外筒6和同心地配置在外筒6的内侧的圆筒体的内筒8。外筒6和内筒8由石英等耐热性材料形成。此外，反应容器4是构成本发明所涉及的基板处理装置的一部分的处理容器的一例。
外筒6和内筒8各自的下端部被由不锈钢等形成的岐管10保持。岐管10被固定于基体板12。此外，岐管10既可以用与外筒6和内筒8不同的构件形成，也可以与外筒6和内筒8一体地形成。
例如，在图1中将岐管形成为反应容器4的一部分，使得与外筒6及内筒8一起形成大致圆筒的内部空间。在该情况下，反应容器4具备由石英等耐热性材料形成的外筒6和内筒8以及由不锈钢等形成的岐管10，岐管10以从下方保持外筒6和内筒8的方式设置在反应容器4的侧面下部。
在岐管10的下端部设置有气密地堵塞反应容器4的下端的开口部侧的盖部14。盖部14形成为由不锈钢等形成的圆盘状，并且以能够气密密封的方式隔着O-环等未图示的密封构件被安装。
另外，在盖部14的大致中心部贯穿有旋转轴20，该旋转轴20一边利用未图示的磁性流体密封件等保持气密状态一边能够进行旋转。旋转轴20的下端连接于旋转机构22，在旋转轴20的上端例如固定有由不锈钢形成的台24。
在台24上设置有由石英等耐热性材料形成的保温筒26。另外，在保温筒26上载置有由石英等耐热性材料形成的晶舟28来作为支承件。
晶舟28是用于将多片晶圆W以规定的间隔保持并收容在反应容器4内的基板保持件。多片(例如50片～175片)晶圆W等基板以规定的间隔、例如10mm左右的间距被收容于晶舟28。晶舟28、保温筒26、台24以及盖部14例如利用作为晶舟升降机发挥功能的升降机构30在反应容器4内成为一体，从而被搬入(装载)到反应容器4内、从反应容器4搬出(卸载)。
另外，气体供给线40向反应容器4内供给规定的气体(例如，含硅气体等处理气体)。向反应容器4内供给处理气体。气体供给线40具有作为处理气体的供给源的气体供给源41、气体配管42以及气体喷嘴43。此外，气体供给线40是构成本发明所涉及的基板处理装置的一部分的气体供给部的一例。气体喷嘴43是构成该气体供给部的一部分的喷射器的一例。
气体配管42是将气体供给源41与气体喷嘴43相连接来向气体喷嘴43引导来自气体供给源41的处理气体的配管。在气体配管42中设置有开闭阀44、质量流量控制器(MFC)等流量控制器45、贮留部(缓冲罐)46以及开闭阀47。
例如，在开闭阀47关闭状态下将开闭阀44打开，通过从气体供给源41以规定的流量流出处理气体，能够将处理气体贮留(充气)到贮留部46。在将处理气体贮留到贮留部46之后，将开闭阀44关闭并将开闭阀47打开，由此能够经由气体喷嘴43向反应容器4内供给规定量的处理气体。由此控制处理气体的供给的开始/停止以及流量。
气体喷嘴43是与气体配管42连接，沿岐管10的侧壁向内侧贯穿并向上方弯曲后垂直地延伸的喷嘴，例如由石英管形成。在气体喷嘴43的垂直部分，沿其长边方向以规定的间隔形成有多个气体喷出孔48，能够从各气体喷出孔48沿水平方向朝向反应容器4内大致均匀地喷出处理气体。即，能够沿与晶圆W的表面平行的方向供给处理气体。此外，气体喷嘴43并不限于一个，也可以设置两个以上。
另外，也可以设置用于供给与用气体供给线40供给的处理气体不同的处理气体(例如，含氮气体)的未图示的其它气体供给线。在该情况下，也能够与气体供给线40的结构同样地将其它气体供给线设为具有未图示的气体供给源、气体配管以及气体喷嘴的结构。
在该其它气体供给线中，气体喷嘴也设为与气体配管连接，沿岐管10的侧壁向内侧贯穿并向上方弯曲后垂直地延伸的喷嘴，例如也由石英管形成。能够构成为在其它气体喷嘴的垂直部分沿其长边方向以规定的间隔形成多个气体喷出孔，从各气体喷出孔沿水平方向朝向反应容器4大致均匀地喷出其它处理气体，从而能够沿与晶圆W的表面平行的方向供给含氮气体。此外，在其它气体供给线中，气体喷嘴也并不限于一个，也可以设置两个以上。
另外，也可以将气体供给线40的气体喷嘴兼用于构成其它气体供给线的气体喷嘴。在该情况下，只要设为以下结构即可：在气体配管中设置未图示的开闭阀、质量流量控制器(MFC)等流量控制器、贮留部(缓冲罐)以及开闭阀，使贮留部的开闭阀的下游与气体供给线40的开闭阀47的下游汇合。由此，也能够在其它气体供给线中控制气体的供给的开始/停止以及流量。
另外，虽然未图示，但也可以设置用于向反应容器4中供给吹扫气体的吹扫气体供给线。吹扫气体供给线能够设为具有吹扫气体供给源、吹扫气体配管以及吹扫气体喷嘴的结构。
吹扫气体配管是将吹扫气体供给源与吹扫气体喷嘴相连接来向吹扫气体喷嘴引导来自吹扫气体供给源的吹扫气体的配管。在吹扫气体配管中设置用于控制吹扫气体的流量的流量控制器和开闭阀，来控制吹扫气体的供给的开始/停止以及流量。吹扫气体喷嘴是与吹扫气体配管连接，沿岐管10的侧壁向内侧贯穿的直线形状(直管形状)的喷嘴，例如能够由石英管形成。
排气线70用于排出反应容器4内的气体。排气线70与设置于岐管10的上部的气体出口32连结。排气线70包括连接于气体出口32的排气通路71、在排气通路71的途中依次连接的压力调整阀72以及真空泵73。在本例中，压力调整阀72将压力计和开闭阀一体地构成，但也可以将压力计和开闭阀各自分开地构成。能够利用该排气线70一边调整反应容器4内的氛围气体的压力一边进行排气。此外，排气线70是构成本发明的基板处理装置的一部分的排气部的一例。
在反应容器4的外周侧，作为加热单元设置有以包围反应容器4的方式加热晶圆W的未图示的加热装置。加热装置具有圆筒体的隔热层，该圆筒体具有顶面。隔热层例如能够由导热性低、柔软无定形的二氧化硅和氧化铝的混合物形成。隔热层能够配置为其内周相对于反应容器4的外表面隔开规定的距离。
另外，在隔热层的外周能够以覆盖隔热层的整个外周的方式安装由不锈钢等形成的未图示的保护层。另外，在隔热层的内周侧以螺旋状地卷绕的方式配置未图示的加热元件。加热元件能够以遍及侧面的轴向整体地卷绕的方式设置于隔热层的内周侧。
加热元件能够在轴向上分割为多个区段(例如四个区段)。能够设为以下结构：基于由按每个区段设置于隔热层的未图示的热电偶检测出的温度来按每个区段独立地控制温度。
由计算机等控制部90进行成膜装置1的各结构部的控制。控制部90例如利用气体供给线40中的开闭阀44、47的开闭来进行处理气体的供给/停止的控制、利用流量控制器45进行气体的流量的控制、利用排气线70中的压力调整阀72和真空泵73进行反应容器4内的压力的控制以及加热装置中的温度的控制。
控制部90连接有存储部91，该存储部91保存有用于通过控制部90的控制实现由成膜装置1执行的各种处理的控制程序、用于根据处理条件使成膜装置1的各结构部执行处理的各种程序(或制程)。程序中包含使成膜装置1执行后述的成膜方法的程序。另外，各种程序能够存储于存储介质并保存于存储部91。存储介质既可以是硬盘、半导体存储器，也可以是CD-ROM、DVD、快闪存储器等便携式的存储器。另外，也可以从其它装置例如经由专用线路向存储部91适当地传送制程。
在本实施方式中，如图1所示，扫气线50连接于气体供给线40。扫气线50是用于对气体供给线40内进行扫气的扫气部的一例。扫气线50与气体供给线40的气体喷嘴43连结。在扫气线50中设置有气体配管51和开闭阀52。另外，在扫气线50中能够设置真空泵。
气体配管51连接于气体供给线40，能够使对气体供给线40内进行扫气后的扫气气体通过。开闭阀52设置在气体配管51的途中，能够与真空泵连动地控制与扫气线50连接的气体供给线40的气体喷嘴43内的压力。
此外，也可以将排气线70的真空泵73兼用于与扫气线50的开闭阀52连动的真空泵。在该情况下，扫气线50连接于排气线70。具体地说，在排气线70的压力调整阀72与真空泵73之间连接扫气线50的气体配管51。根据该结构，能够用一个真空泵控制排气线和扫气线，因此即使在设置扫气线的情况下也能够使用现有的真空泵，能够防止装置的复杂化。
图2～图7是分别说明构成本实施方式的气体供给线40的一部分的气体喷嘴43的结构例(第一实施方式～第六实施方式)的图。
首先，在第一实施方式中，如图1和图2所示，气体喷嘴43的至少一方的端部与气体供给线40的气体配管42连通，另一方的端部与扫气线50连通。另外，气体喷嘴43的气体喷出孔48与反应容器4内连通，并且由构成向反应容器4内供给处理气体的供给口的多个气孔形成。
在气体喷嘴43的两端部设置有开口部49(开口部49A、49B)。设置于一方的端部的开口部49A构成从气体供给线40的气体配管42向气体喷嘴43内导入处理气体的导入口。另外，设置于另一方的端部的开口部49B构成向扫气线50的气体配管51排出扫气气体的排出口。即，气体喷嘴43经由开口部49A来与气体供给线40连通，经由开口部49B来与扫气线50连通。
在该结构中，在气体喷嘴43中与用于向反应容器4内供给处理气体的供给口(气体喷出孔48)分开地设置有用于将被导入到气体喷嘴43内的处理气体进行扫气的排出口(开口部49B)，从而能够经由该排出口将扫气线50连接于气体喷嘴43。因此，能够将作为产生微粒的原因的微粒源(附着于气体喷嘴的副产物、在气体喷嘴内形成的膜的剥离物、由于被剥离的膜的应力而在气体喷嘴内破裂的石英片等)从气体喷嘴43扫到扫气线50。
特别是即使在向反应容器内供给的处理气体的流量稳定之前进行急剧的处理气体的导入的情况下，也能够将微粒源从气体喷嘴43扫到扫气线50，因此能够抑制微粒被带入反应容器4内。
在第二实施方式中，如图1和图3所示，除了具有第一实施方式的结构以外，还具有以下结构：连接于气体喷嘴43的扫气线50的气体配管51延伸至气体喷嘴43的开口部49A(气体供给线40的气体配管42)的附近。根据该结构，能够将扫气线的气体配管51和气体供给线40的气体配管42集中安装于反应容器4(岐管10)，因此扫气线50的气体配管51的配置变得容易。
另外，在第二实施方式中，如图3所示，气体供给线40的气体配管42在气体喷嘴43的开口部49A附近形成为L字形。即，气体配管42以端部弯曲的状态连接于气体喷嘴的开口部49A。根据该结构，能够将气体配管42安装于反应容器4的侧壁(岐管10)，气体供给线40的配置作业变得容易。
在第三实施方式中，如图4所示，扫气线50(气体配管51)的一部分配置在气体喷嘴43的内部。即，利用扫气线50的气体配管51的一部分和气体喷嘴43来构成双重管。另外，在第三实施方式的结构中，扫气线50的气体配管51的一部分也配置在连接于气体喷嘴43的气体配管42的内部。根据该结构，能够省略配置扫气线50的气体配管51所需要的空间的一部分，因此能够使扫气线50的配置紧凑。
另外，在第四实施方式中，如图5所示，在采用了第三实施方式的结构的基础上还将利用扫气线50的气体配管51的一部分和连接于气体喷嘴43的气体配管42构成双重管的部分形成为L字形。根据该结构，能够更加紧凑地设置扫气线50。
在第五实施方式中，如图6所示，气体喷出孔48由一个气孔形成。在该情况下，关于气体喷嘴43，在气体喷嘴43的至少一方的端部处的反应容器4内形成气孔即可。这样，能够与气孔的数量无关地设置扫气线50。
另外，在第五实施方式的结构中，在气体喷嘴43的另一方的端部(与扫气线50连通的开口部49B侧)形成有气体喷出孔48。在这种结构中，气孔被配置在与扫气线50连通的开口部49B(排出口)的附近，因此能够有效地扫出气孔附近的包含微粒源的气体。
另外，在第六实施方式中，如图7所示，在采用了第五实施方式的结构的基础上还将利用扫气线50的气体配管51的一部分和连接于气体喷嘴43的气体配管42构成双重管的部分形成为L字形。根据该结构，能够使扫气线50进一步紧凑化。
接着，对使用了上述成膜装置1的本实施方式的基板处理方法的一例进行说明。图8是表示实施方式所涉及的基板处理方法的一例的流程图。
本实施方式的基板处理方法至少包括气体供给工序和扫气工序。在气体供给工序中从气体喷嘴43向用于收容多个晶圆W的反应容器4内供给处理气体。
在气体供给工序之前进行扫气工序，在扫气工序中，对气体喷嘴43内进行扫气。在扫气工序中将气体喷嘴43内的压力控制为负压。
按图8所示的过程来进行扫气工序。首先，在ST1中判定供给气体的处理是否为最初的处理步骤。在判定为不是最初的处理步骤的情况下，进入ST7，执行气体供给工序来进行普通的气体供给处理。
在ST1中判定为是最初的处理步骤的情况下，进入ST2，打开扫气线50。具体地说，在ST2中将扫气线50的开闭阀52设为打开状态，在ST3中将气体喷嘴43内设为负压。在该情况下，使开闭阀52与排气线70的真空泵73连动来对与扫气线50连通的气体喷嘴43内进行减压。此外，也可以同时进行扫气线50的开通(ST2)和气体喷嘴43内的减压(ST3)。
接着进入ST4，向流量控制器(MFC)45指示处理气体的流量。所指示的气体的流量能够调整为进行气体喷嘴43内的扫气的适当的流量。流量控制器(MFC)45基于被指示的流量来控制开闭阀44、47的开闭，控制在气体供给线40中流动的处理气体的流量并使处理气体流向气体供给线40(ST5)。
然后，关闭扫气线50。具体地说，将扫气线50的开闭阀52设为关闭状态(ST6)。
在上述ST1～ST6的过程完成之后进入ST7，来执行气体供给工序，从而进行普通的气体供给处理。此外，由上述控制部90进行ST1～ST7的过程中的控制。
另外，在扫气工序中将反应容器4内的压力控制为比气体喷嘴43内的压力高的压力。即，对扫气线50的开闭阀52、排气线70的压力调整阀72及真空泵73进行控制，使得气体喷嘴43内的压力小于反应容器4内的压力。
通过该控制，被导入到气体喷嘴43内的处理气体不从气体喷出孔48向反应容器4内喷出而直接流向扫气线50。因此，在扫气工序中，通过气体供给线40的扫气气体不向反应容器4内喷出就经由扫气线50排出到外部。
另外，通过该控制，反应容器4的氛围气体经由气体喷出孔48被抽吸到气体喷嘴43内。因此，能够将在气体喷嘴43的气体喷出孔48附近形成的微粒源、反应容器4内浮游的微粒取入扫气气体所要流经的气体喷嘴43。
通过实施进行这种控制的基板处理方法，即使在进行急剧的气体导入的情况下也能够抑制微粒被带入处理容器内。
接着，对使用本实施方式的基板处理装置(第二实施方式)实施了实施方式的基板处理方法的情况下的效果进行说明。图9是在ALD处理的最初的处理步骤中从基板处理装置的气体喷嘴供给了气体时的基板表面上的微粒分布。其中，图9的(A)示出使用了以往的基板处理装置的情况下的微粒分布，图9的(B)示出使用了本实施方式的基板处理装置的情况下的微粒分布。
首先，在使用了图9的(A)的以往的基板处理装置的情况下，附着于晶圆W的表面的微粒的量多。另外，附着于晶圆W的表面的微粒以偏向气体喷嘴43附近的方式附着在晶圆W上。
另一方面，与使用了以往的基板处理装置的情况相比，在使用了图9的(B)的本实施方式的基板处理装置的情况下，附着于晶圆W的表面的微粒的量较少。另外，附着于晶圆W的表面的微粒大致均匀地附着在晶圆W上。
根据这些结果获知，通过如本实施方式那样设置扫气线50来执行扫气工序，能够防止微粒被带入反应容器4内，能够抑制微粒附着于基板。另外，还获知即使微粒被带入反应容器4内，也能够防止该微粒偏向地附着于晶圆W的表面。
这样，通过经由排出口(开口部49B)将扫气线50连接于气体喷嘴43，作为产生微粒的原因的微粒源被从气体喷嘴43扫到扫气线50，能够减少被带入反应容器4内的微粒的量。因此，即使在进行急剧的气体导入的情况下也能够抑制微粒被带入反应容器4内，能够防止晶圆W的生产率下降。
此外，能够根据所形成的膜的种类来适当选择在本例中使用的气体的种类。另外，在本例中，以使用ALD法的情况为例进行了说明，但也能够在使用CVD法的情况下应用本发明。即，本例能够广泛地应用于在进行急剧的气体导入的环境中使用的成膜方法。
以上，对用于实施本发明的方式进行了说明，但本发明并不限定于上述的实施方式，能够在本发明的范围内进行各种变形和改良。

Claims (11)

1.一种基板处理装置，具有：
处理容器，其用于收容多个基板；
气体供给部，其用于将气体供给到所述处理容器内；以及
排气部，其用于将所述处理容器内的气体排出，
该基板处理装置还具备扫气部，该扫气部用于对所述气体供给部内进行扫气，
所述气体供给部连接于所述扫气部。
2.根据权利要求1所述的基板处理装置，其特征在于，
所述扫气部连接于所述排气部。
3.根据权利要求1或2所述的基板处理装置，其特征在于，
所述气体供给部具有喷射器，该喷射器将气体供给到所述处理容器内，
所述喷射器的至少一方的端部连接于所述扫气部。
4.根据权利要求3所述的基板处理装置，其特征在于，
所述扫气部的一部分配置在所述喷射器的内部。
5.根据权利要求3或4所述的基板处理装置，其特征在于，
所述喷射器形成有与所述处理容器内连通的多个气孔。
6.根据权利要求3至5中的任一项所述的基板处理装置，其特征在于，
关于所述喷射器，在所述喷射器的至少一方的端部形成有与所述处理容器内连通的气孔。
7.一种喷射器，将气体供给到用于收容多个基板的处理容器内，该喷射器具有：
导入口，其用于将气体导入到所述喷射器；
供给口，其用于将气体供给到所述处理容器内；以及
排出口，其与用于对所述喷射器内进行扫气的扫气线连通。
8.根据权利要求7所述的喷射器，其特征在于，
供给口由多个气孔构成。
9.根据权利要求7所述的喷射器，其特征在于，
所述供给口由在所述喷射器的至少一方的端部形成的气孔构成。
10.一种基板处理方法，包括气体供给工序，从喷射器将气体供给到用于收容多个基板的处理容器内，其中，
该基板处理方法在所述气体供给工序之前还包括对所述喷射器内进行扫气的扫气工序，
在所述扫气工序中，将所述喷射器内的压力控制为负压。
11.根据权利要求10所述的基板处理方法，其特征在于，
在所述扫气工序中，将所述处理容器内的压力控制为比所述喷射器内的压力高的压力。
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