JP2011135044A - 成膜方法および成膜装置 - Google Patents
成膜方法および成膜装置 Download PDFInfo
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- 238000000151 deposition Methods 0.000 title abstract description 6
- 230000008021 deposition Effects 0.000 title description 4
- 239000007789 gas Substances 0.000 claims abstract description 260
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 claims abstract description 34
- 238000005121 nitriding Methods 0.000 claims abstract description 26
- 238000010926 purge Methods 0.000 claims abstract description 24
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 19
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract 3
- 239000010408 film Substances 0.000 claims description 194
- 238000012545 processing Methods 0.000 claims description 149
- 238000000034 method Methods 0.000 claims description 81
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 58
- 230000008569 process Effects 0.000 claims description 54
- 230000007246 mechanism Effects 0.000 claims description 42
- 238000000576 coating method Methods 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 13
- 238000003860 storage Methods 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000007599 discharging Methods 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 46
- 238000000231 atomic layer deposition Methods 0.000 description 31
- 239000004065 semiconductor Substances 0.000 description 24
- 230000015572 biosynthetic process Effects 0.000 description 23
- 239000000460 chlorine Substances 0.000 description 15
- 239000006185 dispersion Substances 0.000 description 14
- 239000010453 quartz Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 238000004140 cleaning Methods 0.000 description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 239000000047 product Substances 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 238000005192 partition Methods 0.000 description 7
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 6
- 229910052801 chlorine Inorganic materials 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 239000012528 membrane Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000001179 sorption measurement Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000007790 scraping Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000005046 Chlorosilane Substances 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011553 magnetic fluid Substances 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Abstract
【解決手段】真空保持可能な処理容器内に被処理体(ウエハ)を搬入し、Siソースとしてのモノクロロシランガスを処理容器内へ供給する工程S1と、窒化ガスとしての窒素含有ガス(NH3ガス)を処理容器内へ供給する工程S2とを、パージガスを供給して処理容器内に残留するガスを除去する工程S3a、S3bを挟んで交互に実施する。
【選択図】図3
Description
図1は本発明の実施形態に係る半導体処理用の成膜装置の一例を示す縦断面図、図2は図1の成膜装置を示す横断面図である。なお、図2においては、加熱機構を省略している。
5;ウエハボート
14;窒素含有ガス供給機構
15;Siソースガス供給機構
16;パージガス供給機構
19;窒素含有ガス分散ノズル
22;Siソースガス分散ノズル
30;プラズマ生成機構
33;プラズマ電極
35;高周波電源
40;加熱機構
100;成膜装置
W;半導体ウエハ(被処理体)
Claims (18)
- 真空保持可能な処理容器内に収納された被処理体の温度を150〜550℃として、第1供給工程及び第2供給工程を交互に含むサイクルを複数回繰り返し、前記被処理体上にシリコン窒化膜を形成し、前記第1供給工程では、圧力を66.65〜666.5Paに設定した前記処理容器内へSiソースとしてのモノクロロシランガスを供給し、前記第2供給工程では、窒化ガスとしての窒素含有ガスを前記処理容器内へ供給することを特徴とする成膜方法。
- 真空保持可能な処理容器内に収納された被処理体の温度を150〜550℃として、第1供給工程及び第2供給工程を交互に含むサイクルを複数回繰り返し、前記被処理体上にシリコン窒化膜を形成し、前記第1供給工程では、前記処理容器内へSiソースとしてのモノクロロシランガスを供給し、前記第2供給工程では、窒化ガスとしての窒素含有ガスを前記処理容器内へ供給し、ここで、前記モノクロロシランガスはプラズマ化せずに供給する一方、前記窒素含有ガスは前記処理容器の側壁に取り付けられたプラズマ生成機構によりプラズマ化して供給することを特徴とする成膜方法。
- モノクロロシランガスと窒化ガスとしての窒素含有ガスとを選択的に供給可能な処理容器内で多段に配置された複数の被処理体上にシリコン窒化膜を形成する成膜方法であって、
垂直に延びる第1のノズルに形成された複数のガス吐出孔から水平方向に前記モノクロロシランガスを吐出することにより、前記処理容器に対して前記モノクロロシランガスを供給する一方、前記処理容器に対して前記窒素含有ガスを供給しない第1供給工程と、これにより、前記被処理体の表面に前記モノクロロシランガスに由来する吸着された層を形成することと、
次に、前記処理容器に対して前記モノクロロシランガスおよび前記窒素含有ガスを供給しないと共に、前記処理容器を排気する第1パージ工程と、
次に、垂直に延びる第2のノズルに形成された複数のガス吐出孔から水平方向に前記窒素含有ガスを吐出することにより、前記処理容器に対して前記窒素含有ガスを供給する一方、前記処理容器に対して前記モノクロロシランガスを供給しない第2供給工程と、これにより、前記被処理体の表面上の前記吸着された層を窒化することと、
次に、前記処理容器に対して前記モノクロロシランガスおよび前記窒素含有ガスを供給しないと共に、前記処理容器を排気する第2パージ工程と、
を具備するサイクルを複数回繰り返し、前記サイクル毎に形成される薄膜を積層することにより所定の厚さを有する前記シリコン窒化膜を形成し、ここで、前記サイクルにおける処理温度を150〜550℃に設定し、前記第1供給工程は、前記処理容器内の圧力を66.65〜666.5Paに設定し、前記第2供給工程は、前記処理容器の側壁に取り付けられたプラズマ生成機構により前記窒素含有ガスをプラズマ化しながら前記処理容器に供給し、このようにして励起された前記窒素含有ガスにより、前記被処理体の表面上の前記吸着された層を窒化することを特徴とする成膜方法。 - 前記サイクルは、前記モノクロロシランガスをプラズマ化して供給することを含まず、且つ前記第2供給工程において前記窒素含有ガスをプラズマ化して供給することを含むことを特徴とする請求項1に記載の成膜方法。
- 前記第1供給工程は、前記処理容器内の圧力を66.65〜666.5Paに設定することを特徴とする請求項2に記載の成膜方法。
- 前記サイクルにおける前記被処理体の温度を200〜400℃に設定することを特徴とする請求項2から請求項4のいずれか1項に記載の成膜方法。
- 前記サイクルにおける前記被処理体の温度を300〜400℃に設定することを特徴とする請求項6に記載の成膜方法。
- 前記第1供給工程の長さがT1で且つ前記第2供給工程の長さがT2である時、比T2/T1は0.5〜45に設定されることを特徴とする請求項7に記載の成膜方法。
- 前記窒素含有ガスは、NH3ガスであることを特徴とする請求項1から請求項8のいずれか1項に記載の成膜方法。
- 複数の被処理体を一括して前記処理容器内に挿入し、これら複数の被処理体に対して一括してシリコン窒化膜を形成することを特徴とする請求項1から請求項9のいずれか1項に記載の成膜方法。
- 前記被処理体は、前記シリコン窒化膜が製品膜として形成される製品用被処理体であり、前記方法は、前記製品用被処理体上に前記製品膜を形成する前に、前記製品用被処理体が存在しない状態の前記処理容器内で、前記処理容器の内壁をコーティング膜で被覆するコーティング処理を行うことを更に含み、ここで、前記処理容器内の温度を前記処理温度よりも高いコーティング温度に設定し、前記処理容器内に前記モノクロロシランガスおよび前記窒素含有ガスを交互に且つ何れもプラズマ化せずに供給し、前記モノクロロシランガスおよび前記窒素含有ガス間の反応により前記コーティング膜を形成することを特徴とする請求項2から請求項4のいずれか1項に記載の成膜方法。
- 前記コーティング温度は300〜630℃であることを特徴とする請求項11に記載の成膜方法。
- 複数の被処理体に対してシリコン窒化膜を成膜する成膜装置であって、
真空保持可能な縦型の処理容器と、
前記被処理体を複数段に保持した状態で前記処理容器内に保持する保持部材と、
前記処理容器の外周に設けられた前記被処理体を加熱する加熱機構と、
前記処理容器内へSiソースとしてのモノクロロシランガスを供給するSiソースガス供給機構と、
前記処理容器内へ窒化ガスとしての窒素含有ガスを供給する窒素含有ガス供給機構と、
前記成膜装置の動作を制御する制御部と、
を具備し、前記制御部は、
前記処理容器内に収納された被処理体の温度を150〜550℃として、第1供給工程及び第2供給工程を交互に含むサイクルを複数回繰り返し、前記被処理体上にシリコン窒化膜を形成し、前記第1供給工程では、圧力を66.65〜666.5Paに設定した前記処理容器内へSiソースとしてのモノクロロシランガスを供給し、前記第2供給工程では、窒化ガスとしての窒素含有ガスを前記処理容器内へ供給する成膜方法を実行するように設定されることを特徴とする成膜装置。 - 前記装置は、前記処理容器の側壁に取り付けられたガスをプラズマ化するプラズマ生成機構を更に具備し、前記サイクルは、前記モノクロロシランガスをプラズマ化して供給することを含まず、且つ前記第2供給工程において前記窒素含有ガスをプラズマ化して供給することを含むことを特徴とする請求項13に記載の成膜装置。
- 前記装置は、前記処理容器内にパージガスを供給するパージガス供給機構を更に具備し、前記サイクルは、前記第1供給工程の後で次の前記第2供給工程の前に、前記処理容器内に残留しているガスを除去する第1パージ工程と、前記第2供給工程の後で次の前記第1供給工程の前に、前記処理容器内に残留しているガスを除去する第2パージ工程と、を更に含むことを特徴とする請求項13または14に記載の成膜装置。
- 前記制御部は、前記サイクルにおける前記被処理体の温度を300〜400℃とすることを特徴とする請求項14に記載の成膜装置。
- 前記窒素含有ガスはNH3ガスであることを特徴とする請求項13から請求項16のいずれか1項に記載の成膜装置。
- コンピュータ上で動作し、成膜装置を制御するためのプログラムが記憶された記憶媒体であって、前記プログラムは、実行時に、請求項1から請求項12のいずれか1項に記載の成膜方法が行われるように、コンピュータに前記成膜装置を制御させることを特徴とするコンピュータ読取可能な記憶媒体。
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Free format text: JAPANESE INTERMEDIATE CODE: R250 |