CN107888853B - 固体摄像装置 - Google Patents

固体摄像装置 Download PDF

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Publication number
CN107888853B
CN107888853B CN201711169951.1A CN201711169951A CN107888853B CN 107888853 B CN107888853 B CN 107888853B CN 201711169951 A CN201711169951 A CN 201711169951A CN 107888853 B CN107888853 B CN 107888853B
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pixel
signal
line
reset
column
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Chinese (zh)
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CN107888853A (zh
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春日繁孝
石井基范
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Panasonic Intellectual Property Management Co Ltd
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Panasonic Intellectual Property Management Co Ltd
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/65—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CN201711169951.1A 2012-06-27 2013-03-12 固体摄像装置 Active CN107888853B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012144690 2012-06-27
JP2012-144690 2012-06-27
CN201380032839.7A CN104412574B (zh) 2012-06-27 2013-03-12 固体摄像装置

Related Parent Applications (1)

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CN201380032839.7A Division CN104412574B (zh) 2012-06-27 2013-03-12 固体摄像装置

Publications (2)

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CN107888853A CN107888853A (zh) 2018-04-06
CN107888853B true CN107888853B (zh) 2020-09-01

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CN201711169951.1A Active CN107888853B (zh) 2012-06-27 2013-03-12 固体摄像装置
CN201380032839.7A Active CN104412574B (zh) 2012-06-27 2013-03-12 固体摄像装置

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Country Status (4)

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US (1) US9319609B2 (enExample)
JP (2) JP6238082B2 (enExample)
CN (2) CN107888853B (enExample)
WO (1) WO2014002333A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6317622B2 (ja) * 2014-05-13 2018-04-25 浜松ホトニクス株式会社 固体撮像装置
US10104322B2 (en) * 2014-07-31 2018-10-16 Invisage Technologies, Inc. Image sensors with noise reduction
JP6670451B2 (ja) * 2014-10-01 2020-03-25 ソニー株式会社 固体撮像装置、信号処理方法、及び、電子機器
JP6646824B2 (ja) * 2016-01-22 2020-02-14 パナソニックＩｐマネジメント株式会社 撮像装置
JP2017175108A (ja) * 2016-03-17 2017-09-28 パナソニックＩｐマネジメント株式会社 光センサおよび撮像装置
US11177311B2 (en) 2016-03-29 2021-11-16 Nikon Corporation Image sensor and image capture device
KR102503213B1 (ko) 2016-04-05 2023-02-23 삼성전자 주식회사 세틀링 타임을 감소시키는 cds 회로, 이를 포함하는 이미지 센서
JP6815777B2 (ja) * 2016-07-25 2021-01-20 キヤノン株式会社 撮像装置及び撮像装置の制御方法
KR102684972B1 (ko) 2016-11-28 2024-07-16 삼성전자주식회사 이미지 센서
JP7059031B2 (ja) * 2018-02-09 2022-04-25 キヤノン株式会社 撮像装置、撮像システム、移動体
CN110650300B (zh) * 2018-06-26 2024-08-13 松下知识产权经营株式会社 摄像装置
CN115379147B (zh) * 2022-09-14 2023-02-03 脉冲视觉(北京)科技有限公司 信号读出电路、方法及系统、像素单元阵列电路及设备

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1383320A (zh) * 2001-04-26 2002-12-04 富士通株式会社 Xy地址型固体摄象装置
US6777660B1 (en) * 2002-02-04 2004-08-17 Smal Technologies CMOS active pixel with reset noise reduction
CN1981517A (zh) * 2004-07-06 2007-06-13 松下电器产业株式会社 固体摄像装置
CN101815179A (zh) * 2010-04-15 2010-08-25 昆山锐芯微电子有限公司 Cmos图像传感器
JP2012114838A (ja) * 2010-11-26 2012-06-14 Panasonic Corp 固体撮像装置およびカメラシステム

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JPS5850030B2 (ja) 1979-03-08 1983-11-08 日本放送協会 光電変換装置およびそれを用いた固体撮像板
US6469740B1 (en) 1997-02-04 2002-10-22 Matsushita Electric Industrial Co., Ltd. Physical quantity distribution sensor and method for driving the same
JPH10281870A (ja) 1997-02-04 1998-10-23 Matsushita Electron Corp 物理量分布検知半導体装置およびその駆動方法
JP2000165747A (ja) * 1998-11-27 2000-06-16 Sharp Corp Ｘ線撮像装置
JP4311181B2 (ja) * 2003-12-05 2009-08-12 ソニー株式会社 半導体装置の制御方法および信号処理方法並びに半導体装置および電子機器
JP2007060350A (ja) * 2005-08-25 2007-03-08 Matsushita Electric Ind Co Ltd イメージセンサ
JP5106092B2 (ja) * 2007-12-26 2012-12-26 パナソニック株式会社 固体撮像装置およびカメラ
JP5127510B2 (ja) * 2008-02-29 2013-01-23 キヤノン株式会社 撮像装置、及び撮像装置の制御方法
JPWO2011058684A1 (ja) 2009-11-12 2013-03-28 パナソニック株式会社 固体撮像装置
JP5631050B2 (ja) * 2010-05-10 2014-11-26 キヤノン株式会社 固体撮像装置およびカメラ
KR20120058057A (ko) * 2010-11-29 2012-06-07 삼성전자주식회사 오프셋 제거 회로, 샘플링 회로 및 이미지 센서
US9094612B2 (en) * 2012-09-25 2015-07-28 Semiconductor Components Industries, Llc Back side illuminated global shutter image sensors with back side charge storage
US9628732B2 (en) * 2013-08-23 2017-04-18 Semiconductor Components Industries, Llc Imaging systems and methods for performing column-based image sensor pixel gain adjustments

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1383320A (zh) * 2001-04-26 2002-12-04 富士通株式会社 Xy地址型固体摄象装置
US6777660B1 (en) * 2002-02-04 2004-08-17 Smal Technologies CMOS active pixel with reset noise reduction
CN1981517A (zh) * 2004-07-06 2007-06-13 松下电器产业株式会社 固体摄像装置
CN101815179A (zh) * 2010-04-15 2010-08-25 昆山锐芯微电子有限公司 Cmos图像传感器
JP2012114838A (ja) * 2010-11-26 2012-06-14 Panasonic Corp 固体撮像装置およびカメラシステム

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
A 2.0-μm Pixel Pitch MOS Image Sensor With 1.5 Transistor/Pixel and an Amorphous Si Color Filter;Masahiro Kasano et al;《IEEE Transactions on Electron Devices》;20060327;全文 *

Also Published As

Publication number Publication date
WO2014002333A1 (ja) 2014-01-03
JPWO2014002333A1 (ja) 2016-05-30
US20150103219A1 (en) 2015-04-16
CN107888853A (zh) 2018-04-06
US9319609B2 (en) 2016-04-19
CN104412574B (zh) 2017-12-12
CN104412574A (zh) 2015-03-11
JP6464467B2 (ja) 2019-02-06
JP6238082B2 (ja) 2017-11-29
JP2018011361A (ja) 2018-01-18

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