CN107848902A - 铝‑碳化硅质复合体及其制造方法 - Google Patents
铝‑碳化硅质复合体及其制造方法 Download PDFInfo
- Publication number
- CN107848902A CN107848902A CN201580082081.7A CN201580082081A CN107848902A CN 107848902 A CN107848902 A CN 107848902A CN 201580082081 A CN201580082081 A CN 201580082081A CN 107848902 A CN107848902 A CN 107848902A
- Authority
- CN
- China
- Prior art keywords
- mass
- silicon carbide
- particle diameter
- carborundum
- aluminum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 105
- 238000000034 method Methods 0.000 title claims abstract description 45
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- KMWBBMXGHHLDKL-UHFFFAOYSA-N [AlH3].[Si] Chemical compound [AlH3].[Si] KMWBBMXGHHLDKL-UHFFFAOYSA-N 0.000 title abstract 4
- 239000002245 particle Substances 0.000 claims abstract description 102
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 34
- 238000007598 dipping method Methods 0.000 claims abstract description 11
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 57
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 claims description 43
- 239000002131 composite material Substances 0.000 claims description 43
- 239000000843 powder Substances 0.000 claims description 16
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 13
- 239000011777 magnesium Substances 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 229910052749 magnesium Inorganic materials 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 12
- 238000000465 moulding Methods 0.000 claims description 3
- 238000009826 distribution Methods 0.000 claims description 2
- 238000010304 firing Methods 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 239000002002 slurry Substances 0.000 description 10
- 239000007787 solid Substances 0.000 description 10
- 239000000377 silicon dioxide Substances 0.000 description 9
- 238000013329 compounding Methods 0.000 description 8
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000000084 colloidal system Substances 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000005611 electricity Effects 0.000 description 4
- 238000005242 forging Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 241001062009 Indigofera Species 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000009959 nanxing Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000003763 carbonization Methods 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000011505 plaster Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- -1 aluminium Gold Chemical compound 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 239000002918 waste heat Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
- C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D19/00—Casting in, on, or around objects which form part of the product
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D19/00—Casting in, on, or around objects which form part of the product
- B22D19/02—Casting in, on, or around objects which form part of the product for making reinforced articles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D19/00—Casting in, on, or around objects which form part of the product
- B22D19/14—Casting in, on, or around objects which form part of the product the objects being filamentary or particulate in form
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
- C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
- C04B35/573—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide obtained by reaction sintering or recrystallisation
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/63—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
- C04B35/6303—Inorganic additives
- C04B35/6316—Binders based on silicon compounds
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
- C04B35/645—Pressure sintering
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B38/00—Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B38/00—Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof
- C04B38/0022—Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof obtained by a chemical conversion or reaction other than those relating to the setting or hardening of cement-like material or to the formation of a sol or a gel, e.g. by carbonising or pyrolysing preformed cellular materials based on polymers, organo-metallic or organo-silicon precursors
- C04B38/0032—Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof obtained by a chemical conversion or reaction other than those relating to the setting or hardening of cement-like material or to the formation of a sol or a gel, e.g. by carbonising or pyrolysing preformed cellular materials based on polymers, organo-metallic or organo-silicon precursors one of the precursor materials being a monolithic element having approximately the same dimensions as the final article, e.g. a paper sheet which after carbonisation will react with silicon to form a porous silicon carbide porous body
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/51—Metallising, e.g. infiltration of sintered ceramic preforms with molten metal
- C04B41/515—Other specific metals
- C04B41/5155—Aluminium
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/85—Coating or impregnation with inorganic materials
- C04B41/88—Metals
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/10—Alloys containing non-metals
- C22C1/1005—Pretreatment of the non-metallic additives
- C22C1/1015—Pretreatment of the non-metallic additives by preparing or treating a non-metallic additive preform
- C22C1/1021—Pretreatment of the non-metallic additives by preparing or treating a non-metallic additive preform the preform being ceramic
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/10—Alloys containing non-metals
- C22C1/1036—Alloys containing non-metals starting from a melt
- C22C1/1068—Making hard metals based on borides, carbides, nitrides, oxides or silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3731—Ceramic materials or glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
- C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
- C04B2111/00844—Uses not provided for elsewhere in C04B2111/00 for electronic applications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
- C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
- C04B2111/00905—Uses not provided for elsewhere in C04B2111/00 as preforms
- C04B2111/00913—Uses not provided for elsewhere in C04B2111/00 as preforms as ceramic preforms for the fabrication of metal matrix comp, e.g. cermets
- C04B2111/00931—Coated or infiltrated preforms, e.g. with molten metal
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3418—Silicon oxide, silicic acids, or oxide forming salts thereof, e.g. silica sol, fused silica, silica fume, cristobalite, quartz or flint
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/38—Non-oxide ceramic constituents or additives
- C04B2235/3817—Carbides
- C04B2235/3826—Silicon carbides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/40—Metallic constituents or additives not added as binding phase
- C04B2235/401—Alkaline earth metals
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/40—Metallic constituents or additives not added as binding phase
- C04B2235/402—Aluminium
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/42—Non metallic elements added as constituents or additives, e.g. sulfur, phosphor, selenium or tellurium
- C04B2235/428—Silicon
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/54—Particle size related information
- C04B2235/5463—Particle size distributions
- C04B2235/5472—Bimodal, multi-modal or multi-fraction
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/60—Aspects relating to the preparation, properties or mechanical treatment of green bodies or pre-forms
- C04B2235/602—Making the green bodies or pre-forms by moulding
- C04B2235/6027—Slip casting
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/60—Aspects relating to the preparation, properties or mechanical treatment of green bodies or pre-forms
- C04B2235/616—Liquid infiltration of green bodies or pre-forms
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/78—Grain sizes and shapes, product microstructures, e.g. acicular grains, equiaxed grains, platelet-structures
- C04B2235/782—Grain size distributions
- C04B2235/783—Bimodal, multi-modal or multi-fractional
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/78—Grain sizes and shapes, product microstructures, e.g. acicular grains, equiaxed grains, platelet-structures
- C04B2235/786—Micrometer sized grains, i.e. from 1 to 100 micron
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
- C04B2235/9607—Thermal properties, e.g. thermal expansion coefficient
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/10—Alloys containing non-metals
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/10—Alloys containing non-metals
- C22C1/1036—Alloys containing non-metals starting from a melt
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12007—Component of composite having metal continuous phase interengaged with nonmetal continuous phase
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Structural Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Dispersion Chemistry (AREA)
- Manufacture Of Alloys Or Alloy Compounds (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Plasma & Fusion (AREA)
Abstract
本发明提供高导热、低热膨胀以及低比重的铝‑碳化硅质复合体及其制造方法。本发明提供铝‑碳化硅质复合体,其特征在于:所述铝‑碳化硅质复合体是将铝合金浸渍于多孔质碳化硅成型体而成的,该复合体中的碳化硅的比例为60体积%以上,含有60质量%以上且75质量%以下的粒径为80μm以上且800μm以下的碳化硅,含有20质量%以上且30质量%以下的粒径为8μm以上且小于80μm的碳化硅,含有5质量%以上且10质量%以下的粒径小于8μm的碳化硅。
Description
技术领域
本发明涉及铝-碳化硅质复合体及其制造方法。
背景技术
目前为止,作为功率模块中的散热器材料,一直使用铜。然而,在将铜作为散热器材料使用的情况下,由于其高热膨胀系数(17ppm/K),因此在搭载于散热器材料上的陶瓷电路基板或者将两者接合的焊料中产生裂纹等,在可靠性上存在着问题。因此,期望具有低热膨胀、高导热性的散热器材料。
在上述状况下,碳化硅质复合体由于通过提高该复合体中的碳化硅的含量可将其热膨胀系数抑制在10ppm/K以下,另外能够显现高导热性,进而为低比重等,因此近年来作为散热器材料受到关注(专利文献1、2和3)。
但是,以往的碳化硅质复合体的导热系数均在室温下充其量为200W/mK左右,达不到铜的导热系数(400W/mK),希望具有更高导热系数的碳化硅质复合体。
本发明人为了解决以往的散热器材料具有的问题而反复锐意研究,结果发现了如下事实,从而完成了本发明:碳化硅质复合体的导热系数大大地依赖于构成该复合体的碳化硅粒子的粒径和碳化硅的含量,此外,具有特定范围的粒径及碳化硅含量的复合体显示230W/mK以上的高导热系数,进而,如果只使用粒径大的碳化硅粉末,则复合体中的碳化硅含量不能增加,不能实现230W/mK以上的高导热系数,此外,在为了使碳化硅含量增加而添加碳化硅的微粉时,为了实现230W/mK以上的高导热系数,应特别限定所使用的碳化硅粒子的粒径及其量。
专利文献1:日本特开2000-154080号公报
专利文献2:日本特开2000-141022号公报
专利文献3:日本特开2000-169267号公报
发明内容
本发明鉴于上述实际情况而完成,目的在于获得高导热、低热膨胀以及低比重的铝-碳化硅质复合体。
本发明涉及的铝-碳化硅质复合体的特征在于,所述铝-碳化硅质复合体是将铝合金浸渍于多孔质碳化硅成型体而成的,该复合体中的碳化硅的比例为60体积%以上,含有60质量%以上且75质量%以下的粒径为80μm以上且800μm以下的碳化硅,含有20质量%以上且30质量%以下的粒径为8μm以上且小于80μm的碳化硅,含有5质量%以上且10质量%以下的粒径小于8μm的碳化硅。
根据本发明的一个方案,上述铝-碳化硅质复合体的特征在于:在25℃下的导热系数为230W/mK以上。
根据本发明的一个方案,上述铝-碳化硅质复合体的特征在于:在25℃至150℃时的热膨胀系数为7.0ppm/K以下。
根据本发明的一个方案,上述铝-碳化硅质复合体的特征在于:上述铝合金含有10质量%~14质量%的硅和0.5质量%~2.5质量%的镁。
根据本发明的一个方案,上述铝-碳化硅质复合体的特征在于:在配混了具有不同粒度分布的3种以上的碳化硅粉末的原料粉末中添加无机粘合剂,经过成型工序和烧成工序。
本发明涉及的铝-碳化硅质复合体或采用本发明涉及的制造方法提供的铝-碳化硅质复合体为高导热、低热膨胀和低比重。
具体实施方式
以下对于本发明涉及的铝-碳化硅质复合体及其制造方法,说明一个实施方式。但是,本发明显然不受限于以下的实施方式。
本实施方式涉及的铝-碳化硅质复合体的特征在于:所述铝-碳化硅质复合体是将铝合金浸渍于多孔质碳化硅成型体而成的,该复合体中的碳化硅的比例为60体积%以上,含有60质量%以上且75质量%以下的粒径为80μm以上且800μm以下的碳化硅,含有20质量%以上且30质量%以下的粒径为8μm以上且小于80μm的碳化硅,含有5质量%以上且10质量%以下的粒径小于8μm的碳化硅。在本实施方式中,碳化硅的粒径是指利用电阻试验方法所算出的粒径。
[碳化硅质复合体]
在本实施方式涉及的铝-碳化硅质复合体中,通过将具有80μm以上且800μm以下的粒径的粒子相对于全部碳化硅粒子的量设为60质量%以上且小于75质量%,从而能够显现230W/mK以上的导热系数。
通过上述粒径为80μm以上,从而变得易于获得目标的230W/mK以上的导热系数。另外,当小于55质量%时,即使能够加大复合体中的碳化硅含量本身,也不能实现本发明的目的。
在本实施方式涉及的铝-碳化硅质复合体中,通过将具有8μm以上且小于80μm的粒径的粒子相对于全部碳化硅粒子的量设为20质量%以上且小于30质量%,从而能够获得能抑制导热系数降低的效果。
另外,在本实施方式涉及的铝-碳化硅质复合体中,通过将具有小于8μm的粒径的粒子相对于全部碳化硅粒子的量设为5质量%以上且小于10质量%,从而变得容易获得目标的7.0ppm/K以下的热膨胀系数。
在本实施方式涉及的铝-碳化硅质复合体中,构成该复合体的碳化硅粒子的粒径及碳化硅的含量是大幅地支配导热系数的重要因素,其基于以下的见解:在碳化硅粒子具有特定范围的粒径且该复合体中的碳化硅含量为特定量以上时,得到在室温(25℃)下具有230W/mK以上的高导热系数的碳化硅质复合体。
此外,单纯使用粒径大的碳化硅粉末得到的碳化硅质复合体,由于使用的碳化硅粒子本身的粒径大,因此少有氧自原料混入,难以通过复合体的制造过程受到氧化等的影响而混入氧,所以具有较高的导热系数,但难以显现230W/mK以上的高导热系数,其理由基于以下的见解:由于粒径大,因此提高复合体中的碳化硅含量困难,进而,就为了提高碳化硅含量所添加的粒径小的碳化硅粉末而言,如果未将其量限定在特定范围,则在室温下无法显现230W/mK以上的高导热系数。
[铝合金]
在本实施方式中,作为铝合金,可举出在制作碳化硅质复合体时通常使用的含有硅的铝合金、含有硅和镁的铝合金以及含有镁的铝合金。其中,从熔融金属的熔点低且作业性良好出发,优选含有硅和镁的铝合金,另外,从提高所得到的复合体的导热系数的方面出发,优选选择含有镁的铝合金。
为了抑制导热系数的降低,可将硅的含量设为18质量%以下。更优选地,硅的含量是10质量%~14质量%。
另外,对于镁的含量,考虑因合金的熔点降低而作业性良好、成为所得到的复合体的导热系数降低的原因等,优选为0.5质量%以上且2.5质量%以下。
进而,如果为0.5质量%以上且1.6质量%以下,则25℃下的导热系数为230W/mK以上,如果为1.6质量%以上且2.5质量%以下,则25℃下的导热系数为240W/mK以上,因而更优选。
本实施方式涉及的铝-碳化硅质复合体的用途并不受限定,特别是在如半导体模块用散热板这样被要求更低热膨胀性的用途中,希望该复合体中的碳化硅含量多。因此,优选将该复合体中的碳化硅含量设为60体积%以上,在这种情况下,能够获得在25℃至150℃时的复合体的热膨胀系数为7.0ppm/K以下的复合体。
[制造方法]
在制作本实施方式涉及的铝-碳化硅质复合体时,只要使用以全部碳化硅粒子中的具有80μm以上且800μm以下的粒径的粒子为60质量%以上且75质量%以下、具有8μm以上且小于80μm的粒径的粒子为20质量%以上且30质量%以下、具有小于8μm的粒径的粒子为5质量%以上且10质量%以下的方式构成的碳化硅粉末而得到碳化硅的填充度(或相对密度)为60体积%以上的多孔质成型体,应用以往公知的浸渍方法将铝合金浸渍于该多孔质成型体即可。
作为上述以往公知的浸渍方法,已知在熔融铝合金中一边搅拌碳化硅粉末一边投入规定量的方法、将碳化硅粉末和铝合金粉末混合并烧成的粉末冶金法、以及预先制作包含碳化硅的预成型体并将熔融铝合金浸渍于其中的熔融金属锻造法、压铸法等。在这些方法中,从能够使复合体中的碳化硅含量增多的方面以及易于得到致密的复合体出发,制作预成型体且将熔融铝浸渍于其中的方法是优选的方法。
作为更优选的浸渍方法,可举出熔融金属锻造法。这是因为,该方法是将预成型体设置于模具内并在投入铝合金后用机械压力进行加压的方法,作业容易并且例如在空气中进行预成型体的余热处理的情况下能够在其余热不会对预成型体引起大的氧化的温度条件下浸渍铝合金。作为熔融金属锻造法中的一般条件,使铝合金浸渍时的熔融铝合金温度为700℃~850℃,作为浸渍时的压力,为30MPa以上。
以下作为制造本实施方式涉及的铝-碳化硅质复合体的方法,特别通过将铝合金浸渍于预成型体的方法,对本发明更详细地说明。
在制作预成型体时,作为其成型方法,能够采用模压成型法、铸塑成型法、挤出成型法等公知的成型法,同时能够应用以往公知的干燥、烧成等处理。另外,成型时使用甲基纤维素、PVA等有机粘合剂、胶体二氧化硅、氧化铝溶胶等无机粘合剂、进而作为溶剂的水、有机溶剂等都没有任何问题。
即便是施以这样的各种处理,只要临浸渍前的预成型体保持以下的构成即可:由全部碳化硅粒子中的具有80μm以上且800μm以下的粒径的粒子为60质量%以上且75质量%以下、具有8μm以上且小于80μm的粒径的粒子为20质量%以上且30质量%以下、以及具有小于8μm的粒径的粒子为5质量%以上且10质量%以下所构成,碳化硅的填充度为60体积%以上。
就预成型体而言,为了显现其强度,进行胶体二氧化硅、氧化铝溶胶等无机粘合剂添加,这些粘合剂在使导热系数降低的方向上发挥作用。因此,在其添加时,应根据预成型体制作时使用的碳化硅粉末的粒径和由其获得的预成型体的碳化硅填充度而适宜地调整其添加量。在上述无机粘合剂中胶体二氧化硅通过烧成而成为二氧化硅,使碳化硅粒子结合,显现出充分的预成型体强度,因此优选,但由于这些无机粘合剂的添加,产生来自无机粘合剂的氧增量,因此应限制其添加量。
在制作本实施方式涉及的铝-碳化硅质复合体时,在例如固体成分浓度为20质量%的二氧化硅溶胶的情况下,相对于全部碳化硅粒子,无机粘合剂的添加量优选10质量%以下。如果无机粘合剂的添加量为10质量%以上,则在25℃下的导热系数为230W/mK以上,如果为10质量%以上,则在25℃下的导热系数为245W/mK以上。
为了显现上述无机粘合剂产生的强度等,一般对预成型体进行烧成。此时,通常在空气中等含氧气氛中进行烧成,但有时构成预成型体的碳化硅粉末因为该烧成而被少许氧化,成为在复合体中导热系数降低的原因。因此,在预成型体的烧成时,应根据使用的碳化硅粉末的粒径,采用尽可能不易受到氧化的条件。例如,在空气中的烧成虽然也取决于其保持时间,但优选在小于950℃的温度下进行,尽可能抑制氧化。作为优选的温度范围,为750℃~900℃。另外,作为非氧化性的气氛中的烧成方法,可举出在氩、氦、氢、氮等非氧化性气体中或真空中进行烧成的方法。
另外,作为将铝合金浸渍于预成型体的方法,能够使用熔融金属锻造法、压铸法及将它们改进的方法等公知的方法。此外,在浸渍时,通常作为其预备工序,一般进行预成型体的预热处理以使铝合金容易浸透。在预热处理中,应注意构成预成型体的碳化硅粒子被氧化而氧量不超过1.4质量%,进而,优选将氧量抑制在1.1质量%以下。
上述实施方式涉及的铝-碳化硅质复合体由于具有230W/mK以上的高导热系数,所以适合作为功率模块用的散热器材料。另外,由于在25℃至150℃时的热膨胀系数为7.0ppm/K以下,因此能够用作半导体模块用散热板。
另外,就上述实施方式涉及的铝-碳化硅质复合体而言,其比重为约3左右的低比重,也可用作汽车、电车等移动装置用的搭载材料。
实施例
[实施例1]
称量具有80μm以上且800μm以下的粒径的碳化硅粉末65质量%、具有8μm以上且小于80μm的粒径的碳化硅粉末25质量%、具有小于8μm的粒径的碳化硅粉末10质量%和胶体二氧化硅(日产化学工业株式会社制SNOWTEX O,含有20质量%的固体物)8.9质量%、水12质量%,将它们混合而制备浆料。将该浆料浇注到石膏模中并放置后,脱模、干燥而得到了成型体。将该成型体在空气中在1000℃下烧成4小时,作成预成型体。
作为具有80μm以上且800μm以下的粒径的碳化硅粉末,使用了大平洋蓝达姆株式会社制NG-F80。
另外,以具有8μm以上且小于80μm的粒径的碳化硅粉末为25质量%、具有小于8μm的粒径的碳化硅粉末为10质量%的方式,使用了将南兴陶瓷株式会社制GC-#500、屋久岛电工株式会社制GC-1000F和南兴陶瓷株式会社制GC-#4000以13.5:16.5:5.0的配混率混合而成的粉末。
针对上述预成型体的一部份,为了测定密度而加工成直径50mm、厚度5mm。预成型体的碳化硅的填充度为69.6%。对于预成型体的碳化硅填充度,用上述加工品的密度除以碳化硅的理论密度3.21g/cm3,用百分率定义。
针对剩余的预成型体,通过在空气中于650℃下烧成1小时而进行了预热处理。预热后马上将预成型体设置于模具内后,将含有硅12质量%、镁1质量%的在850℃下熔融的铝合金以将预成型体的前面充分遮蔽的方式投入模具内。然后,快速地利用冲头以56MPa的压力冲压14分钟,冷却后,从模具内将含有碳化硅质复合体的铝合金块取出。进而,从该块将碳化硅质复合体切出。
为了测定上述复合体在室温下的导热系数,将一部分加工成长25mm、宽25mm、厚1mm,作为试样。采用激光闪光法测定该试样的导热系数,结果其导热系数为252W/mK。对于热膨胀系数测定用试样,从上述复合体切出规定形状的试样,测定从室温(25℃)至150℃的热膨胀系数。将其结果示于表1中。
[表1]
[实施例2]
称量具有80μm以上且800μm以下的粒径的碳化硅粉末65质量%、具有8μm以上且小于80μm的粒径的碳化硅粉末26质量%、具有小于8μm的粒径的碳化硅粉末9质量%和胶体二氧化硅(日产化学工业株式会社制SNOWTEX O,含有20质量%的固体物)11.6质量%、水9质量%,将它们混合而制备浆料。
作为具有80μm以上且800μm以下的粒径的碳化硅粉末,使用了大平洋蓝达姆株式会社制NG-F80。
另外,以具有8μm以上且小于80μm的粒径的碳化硅粉末为26质量%、具有小于8μm的粒径的碳化硅粉末为9质量%的方式,使用了将南兴陶瓷株式会社制GC-#500、屋久岛电工株式会社制GC-1000F和GMF-4S以13.5:16.5:5.0的配混率混合而成的粉末。
采用与实施例1相同的方法制作了预成型体和复合体。将结果示于表1中。
[实施例3]
称量具有80μm以上且800μm以下的粒径的碳化硅粉末65质量%、具有8μm以上且小于80μm的粒径的碳化硅粉末25质量%、具有小于8μm的粒径的碳化硅粉末10质量%和胶体二氧化硅(日产化学工业株式会社制SNOWTEX O,含有20质量%的固体物)12.0质量%、水9质量%,将它们混合而制备浆料。
作为具有80μm以上且800μm以下的粒径的碳化硅粉末,使用了大平洋蓝达姆株式会社制NG-F80。
此外,以具有8μm以上且小于80μm的粒径的碳化硅粉末为25质量%、具有小于8μm的粒径的碳化硅粉末为10质量%的方式,使用了将南兴陶瓷株式会社制GC-#500、屋久岛电工株式会社制GC-1000F和南兴陶瓷株式会社制GC-#4000以13.5:16.5:5.0的配混率混合而成的粉末。采用与实施例1相同的方法制作了预成型体。
铝合金使用含有硅12质量%、镁0.9质量%的铝合金制作了复合体。将结果示于表1中。
[实施例4]
除了使铝合金为含有硅12质量%、镁1.2质量%的铝合金以外,采用与实施例3相同的方法制作了预成型体和复合体。将结果示于表1。
[实施例5]
除了使铝合金为含有硅12质量%、镁1.6质量%的铝合金以外,采用与实施例3相同的方法制作了预成型体和复合体。将结果示于表1中。
[实施例6]
作为具有80μm以上且800μm以下的粒径的碳化硅粉末,使用了大平洋蓝达姆株式会社制NG-F80。
此外,以具有8μm以上且小于80μm的粒径的碳化硅粉末为25质量%、具有小于8μm的粒径的碳化硅粉末为10质量%的方式,使用了将南兴陶瓷株式会社制GC-#500、屋久岛电工株式会社制GC-1000F和南兴陶瓷株式会社制GC-#6000以13.5:16.5:5.0的配混率混合而成的粉末。
除了称量6质量%的胶体二氧化硅(日产化学工业株式会社制SNOWTEX O,含有20质量%的固体物)而制备浆料以外,采用与实施例3相同的方法制作了预成型体和复合体。将结果示于表1中。
[实施例7]
称量具有80μm以上且800μm以下的粒径的碳化硅粉末60质量%、具有8μm以上且小于80μm的粒径的碳化硅粉末30质量%、具有小于8μm的粒径的碳化硅粉末10质量%和胶体二氧化硅(日产化学工业株式会社制SNOWTEX O,含有20质量%的固体物)12质量%、水9质量%,将它们混合而制备浆料。
以具有80μm以上且800μm以下的粒径的碳化硅粉末为60质量%、具有8μm以上且小于80μm的粒径的碳化硅粉末为30质量%、具有小于8μm的粒径的碳化硅粉末为10质量%的方式,使用了将大平洋蓝达姆株式会社制NG-F54、大平洋蓝达姆株式会社制GC-#500和大平洋蓝达姆株式会社制GC-#3000以60:30:10的配混率混合而成的粉末。
采用与实施例1相同的方法制作了预成型体和复合体。将结果示于表1中。
[实施例8]
称量具有80μm以上且800μm以下的粒径的碳化硅粉末75质量%、具有8μm以上且小于80μm的粒径的碳化硅粉末25质量%、具有小于8μm的粒径的碳化硅粉末5质量%和胶体二氧化硅(日产化学工业株式会社制SNOWTEX O,含有20质量%的固体物)12质量%、水9质量%,将它们混合而制备浆料。
以具有80μm以上且800μm以下的粒径的碳化硅粉末为75质量%、具有8μm以上且小于80μm的粒径的碳化硅粉末为20质量%、具有小于8μm的粒径的碳化硅粉末为5质量%的方式,使用了将大平洋蓝达姆株式会社制NG-F30、大平洋蓝达姆株式会社制NG-F220和大平洋蓝达姆株式会社制GC-#2000以60:30:10的配混率混合而成的粉末。
采用与实施例1相同的方法制作了预成型体和复合体。将结果示于表1中。
[实施例9]
称量具有80μm以上且800μm以下的粒径的碳化硅粉末70质量%、具有8μm以上且小于80μm的粒径的碳化硅粉末20质量%、具有小于8μm的粒径的碳化硅粉末10质量%和胶体二氧化硅(日产化学工业株式会社制SNOWTEX O,含有20质量%的固体物)12质量%、水9质量%,将它们混合而制备浆料。
作为具有80μm以上且800μm以下的粒径的碳化硅粉末,使用了大平洋蓝达姆株式会社制NG-F80。
此外,以具有8μm以上且小于80μm的粒径的碳化硅粉末为20质量%、具有小于8μm的粒径的碳化硅粉末为10质量%的方式,将大平洋蓝达姆株式会社制GC-#800和大平洋蓝达姆株式会社制GC-#6000以20:10的配混率混合。
采用与实施例1相同的方法制作了预成型体。铝合金为硅12质量%、镁1.6质量%。
[实施例10]
除了使铝合金为含有硅12质量%、含有镁2.1质量%的铝合金以外,采用与实施例9相同的方法制作了预成型体和复合体。
[比较例]
称量具有80μm以上且800μm以下的粒径的碳化硅粉末55质量%、具有8μm以上且小于80μm的粒径的碳化硅粉末40质量%、具有小于8μm的粒径的碳化硅粉末5质量%和胶体二氧化硅(日产化学工业株式会社制SNOWTEX O,含有20质量%的固体物)12质量%、水12质量%,将它们混合而制备浆料。将该浆料浇注到石膏模中并放置后,脱模、干燥而得到了成型体。将该成型体在空气中、1000℃下烧成4小时,作成了预成型体。
以具有80μm以上且800μm以下的粒径的碳化硅粉末为55质量%、具有8μm以上且小于80μm的粒径的碳化硅粉末为40质量%、具有小于8μm的粒径的碳化硅粉末为5质量%的方式,使用了将大平洋蓝达姆株式会社制NG-F150和屋久岛电工株式会社制GC-1000F以2:1的配混率混合而成的粉末。
从表1可知,本发明涉及的实施例1至10的铝-碳化硅质复合体具有高导热且具有低热膨胀系数。另外,可知这些铝-碳化硅质复合体为低比重。
如上所述,本发明涉及的铝-碳化硅质复合体由于具有高导热系数,所以适合作为功率模块用的散热器材料,由于具有低的热膨胀系数,因此能够用作半导体模块用散热板。另外,由于其比重低,因此也可用作汽车、电车等移动装置用的搭载材料。
Claims (5)
1.一种铝-碳化硅质复合体,其特征在于:
所述铝-碳化硅质复合体是将铝合金浸渍于多孔质碳化硅成型体而成的,
所述复合体中的碳化硅的比例为60体积%以上,
含有60质量%以上且75质量%以下的粒径为80μm以上且800μm以下的碳化硅,
含有20质量%以上且30质量%以下的粒径为8μm以上且小于80μm的碳化硅,
含有5质量%以上且10质量%以下的粒径小于8μm的碳化硅。
2.根据权利要求1所述的铝-碳化硅质复合体,其特征在于:在25℃下的导热系数为230W/mK以上。
3.根据权利要求1或2所述的铝-碳化硅质复合体,其特征在于:在25℃至150℃时的热膨胀系数为7.0ppm/K以下。
4.根据权利要求1至3中任一项所述的铝-碳化硅质复合体,其特征在于:所述铝合金含有10质量%~14质量%的硅和0.5质量%~2.5质量%的镁。
5.一种铝-碳化硅质复合体的制造方法,
所述制造方法是权利要求1至4中任一项所述的铝-碳化硅质复合体的制造方法,其特征在于:
在配混了具有不同粒度分布的3种以上的碳化硅粉末的原料粉末中添加无机粘合剂,经过成型工序和烧成工序。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2015/071802 WO2017022012A1 (ja) | 2015-07-31 | 2015-07-31 | アルミニウム‐炭化珪素質複合体及びその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN107848902A true CN107848902A (zh) | 2018-03-27 |
Family
ID=57942655
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201580082081.7A Pending CN107848902A (zh) | 2015-07-31 | 2015-07-31 | 铝‑碳化硅质复合体及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10919811B2 (zh) |
CN (1) | CN107848902A (zh) |
DE (1) | DE112015006755T5 (zh) |
WO (1) | WO2017022012A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113802080A (zh) * | 2021-09-23 | 2021-12-17 | 无锡市通瑞电力自动化设备有限公司 | 一种大功率充电桩用的铝碳化硅导热材料及其制备方法 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI680957B (zh) | 2018-12-24 | 2020-01-01 | 財團法人工業技術研究院 | 鉬-碳化矽複合粉體及其製造方法 |
JP6821207B2 (ja) * | 2019-06-04 | 2021-01-27 | アドバンスコンポジット株式会社 | アルミニウム合金基複合材料の製造方法 |
CN111889686B (zh) * | 2020-07-16 | 2022-11-08 | 陕西迈特瑞科技有限公司 | 高强碳化硅颗粒增强铝基复合材料的方法及其复合材料 |
WO2023058597A1 (ja) * | 2021-10-06 | 2023-04-13 | デンカ株式会社 | 放熱部材 |
CN114478017B (zh) * | 2021-11-22 | 2022-10-28 | 哈尔滨理工大学 | 基于sls成型制备铝合金铸造芯用氧化铝/碳化硅陶瓷复合材料的方法 |
TWI830452B (zh) | 2022-10-21 | 2024-01-21 | 財團法人工業技術研究院 | 鋁合金材料與鋁合金物件及其形成方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000141022A (ja) * | 1998-11-12 | 2000-05-23 | Denki Kagaku Kogyo Kk | 炭化珪素質複合体及びその製造方法 |
CN101438401A (zh) * | 2006-05-09 | 2009-05-20 | 电气化学工业株式会社 | 铝-碳化硅质复合体及其加工方法 |
CN102191411A (zh) * | 2011-04-28 | 2011-09-21 | 上海交通大学 | 制备铝基复合材料的助渗工艺 |
CN103194630A (zh) * | 2013-04-01 | 2013-07-10 | 兰州理工大学 | 高体积分数SiCp/Al复合材料的制备方法 |
JP2014107468A (ja) * | 2012-11-29 | 2014-06-09 | Denki Kagaku Kogyo Kk | アルミニウム−ダイヤモンド系複合体放熱部品 |
CN104726734A (zh) * | 2013-12-20 | 2015-06-24 | 中国科学院上海硅酸盐研究所 | 碳化硅增强铝基复合材料的制备方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3847009B2 (ja) | 1998-11-12 | 2006-11-15 | 電気化学工業株式会社 | 炭化珪素質複合体の製造方法 |
JP3847012B2 (ja) | 1998-12-03 | 2006-11-15 | 電気化学工業株式会社 | 炭化珪素質複合体の製造方法 |
US9387532B2 (en) | 2009-02-13 | 2016-07-12 | Denka Company Limited | Composite substrate for LED light emitting element, method of production of same, and LED light emitting element |
JP2010278171A (ja) | 2009-05-28 | 2010-12-09 | Denki Kagaku Kogyo Kk | パワー半導体及びその製造方法 |
WO2012071353A1 (en) * | 2010-11-22 | 2012-05-31 | Saint-Gobain Ceramics & Plastics, Inc. | Infiltrated silicon carbide bodies and methods of making |
KR102024190B1 (ko) * | 2012-10-18 | 2019-09-23 | 엘지이노텍 주식회사 | 탄화규소 분말의 제조 방법 |
US9862029B2 (en) * | 2013-03-15 | 2018-01-09 | Kennametal Inc | Methods of making metal matrix composite and alloy articles |
-
2015
- 2015-07-31 US US15/748,420 patent/US10919811B2/en active Active
- 2015-07-31 WO PCT/JP2015/071802 patent/WO2017022012A1/ja active Application Filing
- 2015-07-31 CN CN201580082081.7A patent/CN107848902A/zh active Pending
- 2015-07-31 DE DE112015006755.8T patent/DE112015006755T5/de active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000141022A (ja) * | 1998-11-12 | 2000-05-23 | Denki Kagaku Kogyo Kk | 炭化珪素質複合体及びその製造方法 |
CN101438401A (zh) * | 2006-05-09 | 2009-05-20 | 电气化学工业株式会社 | 铝-碳化硅质复合体及其加工方法 |
CN102191411A (zh) * | 2011-04-28 | 2011-09-21 | 上海交通大学 | 制备铝基复合材料的助渗工艺 |
JP2014107468A (ja) * | 2012-11-29 | 2014-06-09 | Denki Kagaku Kogyo Kk | アルミニウム−ダイヤモンド系複合体放熱部品 |
CN103194630A (zh) * | 2013-04-01 | 2013-07-10 | 兰州理工大学 | 高体积分数SiCp/Al复合材料的制备方法 |
CN104726734A (zh) * | 2013-12-20 | 2015-06-24 | 中国科学院上海硅酸盐研究所 | 碳化硅增强铝基复合材料的制备方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113802080A (zh) * | 2021-09-23 | 2021-12-17 | 无锡市通瑞电力自动化设备有限公司 | 一种大功率充电桩用的铝碳化硅导热材料及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2017022012A1 (ja) | 2017-02-09 |
DE112015006755T5 (de) | 2018-04-12 |
US20180215668A1 (en) | 2018-08-02 |
US10919811B2 (en) | 2021-02-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN107848902A (zh) | 铝‑碳化硅质复合体及其制造方法 | |
CN101323524B (zh) | 一种定向排列孔碳化硅多孔陶瓷的制备方法 | |
CN108251678B (zh) | 一种金属基氮化铝复合材料及其制备方法 | |
CN105236982B (zh) | 氮化铝增强的石墨基复合材料及制备工艺 | |
JPH09157773A (ja) | 低熱膨張・高熱伝導性アルミニウム複合材料及びその製造方法 | |
CN103981392A (zh) | 一种高体积分数金刚石/金属基复合材料的制备方法 | |
CN102181753B (zh) | 一种硅与碳化硅混杂增强的铝基复合材料及其制备方法 | |
CN101734923A (zh) | 一种氮化铝多孔陶瓷及其制备方法 | |
CN107207361A (zh) | 碳化硅质复合体的制造方法 | |
CN104649709A (zh) | 一种多孔碳化硅陶瓷的制造方法 | |
CN107337453A (zh) | 一种结合气固反应法制备重结晶碳化硅多孔陶瓷的方法 | |
CN110092650B (zh) | 轻质高强针状莫来石多孔陶瓷及其制备方法以及过滤器 | |
CN114231812A (zh) | 一种AlN-W-Cu复合材料及其制备方法 | |
CN112195354B (zh) | 一种SiCp/Al复合材料的成型方法 | |
WO2005049525A1 (ja) | 高熱伝導性窒化アルミニウム焼結体 | |
CN113337747A (zh) | 一种高强高导铜合金的制备方法 | |
CN105294079A (zh) | 一种高导热陶瓷材料及其制造方法 | |
JP3698571B2 (ja) | 炭化珪素質複合体及びその製造方法 | |
CN108249948B (zh) | 一种氮化铝陶瓷及其制备方法和应用 | |
CN104445954B (zh) | 一种硼硅酸盐玻璃基低温共烧陶瓷材料及其制备方法 | |
JP6452969B2 (ja) | アルミニウム−炭化珪素質複合体及びその製造方法 | |
CN101665352A (zh) | 氧化铝烧结体及其制造方法 | |
JP3847009B2 (ja) | 炭化珪素質複合体の製造方法 | |
JP2004169064A (ja) | 銅−タングステン合金およびその製造方法 | |
CN109822099A (zh) | 一种微波热压炉专用模具的制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |