CN107710406B - 高频模块 - Google Patents

高频模块 Download PDF

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Publication number
CN107710406B
CN107710406B CN201680031752.1A CN201680031752A CN107710406B CN 107710406 B CN107710406 B CN 107710406B CN 201680031752 A CN201680031752 A CN 201680031752A CN 107710406 B CN107710406 B CN 107710406B
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shield wall
conductor
view
plan
frequency module
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CN107710406A (zh
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大坪喜人
山元一生
村山卓也
野村忠志
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Murata Manufacturing Co Ltd
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Murata Manufacturing Co Ltd
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Abstract

本发明提供一种高频模块，能够提高安装部件间的屏蔽特性同时减少布线基板的内部布线电极的变形或断线，并且能够实现小型化。高频模块(1a)具备：多层布线基板(2)；多个部件(3a、3b)，安装于该多层布线基板(2)的上表面(20a)；密封树脂层(4)，层叠于多层布线基板(2)的上表面(20a)并密封多个部件(3a、3b)；屏蔽壁(5)，配置于密封树脂层(4)内规定的部件(3a、3b)间；以及表层导体(8a)，在多层布线基板(2)的上表面(20a)与屏蔽壁(5)之间配设成在多层布线基板(2)的俯视状态下与屏蔽壁(5)重叠，屏蔽壁(5)在上述俯视状态下呈具有弯曲部(5a1、5a2)的折线状，且在该弯曲部(5a1、5a2)具有贯穿表层导体(8a)的突出部(5b1、5b2)。

Description

高频模块
技术领域
本发明涉及具备覆盖安装于布线基板的多个部件的密封树脂层和用于防止部件间的噪声的相互干扰的屏蔽壁的高频模块。
背景技术
在搭载于移动终端装置等的高频模块中存在设置有用于屏蔽电磁波的屏蔽层的情况。在这种高频模块中，安装于布线基板上的部件被模具树脂覆盖，且设置有屏蔽层以覆盖该模具树脂的表面。
这种屏蔽层是为了屏蔽来自外部的噪声而设置，但在布线基板安装有多个部件的情况下，存在从这些部件产生的噪声干扰其他部件这样的问题。因此，以往提出了设置不仅屏蔽外部还将安装部件间的噪声相互地屏蔽的屏蔽体的高频模块。
例如，如图19所示，专利文献1所记载的高频模块100在布线基板101上安装有2个部件102，两部件102被模具树脂层103密封。在模具树脂层103的两部件间形成有贯穿该模具树脂层103以及布线基板101上的接地电极105的狭缝S。屏蔽层104由覆盖模具树脂层103的表面并且填充于狭缝S的导电性树脂形成。另外，填充于狭缝S的导电性树脂与形成于布线基板101的接地电极105电连接。
该情况下，通过覆盖模具树脂层103的表面的导电性树脂，能够屏蔽针对部件102的来自外部的噪声。另外，也能够通过填充于狭缝S的导电性树脂来防止两部件102间的噪声的相互干扰。
另外，若屏蔽层104与布线基板101的接地电极105的连接产生不良情况，则屏蔽特性恶化，但该高频模块100构成为通过狭缝S贯穿接地电极105而可靠地进行两者的电连接。
专利文献1：日本特开2010－225620号公报(参照第0025～0026段、图1等)
近年来，伴随这种高频模块的小型、高功能化，而有想在中途弯曲防止部件间的噪声的相互干扰的屏蔽体，不浪费地利用布线基板的安装面这样的需求。然而，上述的狭缝S由于通过切割形成，所以难以在中途改变方向。另外，由于狭缝S而布线基板101成为被半切的状态，所以存在高频模块100容易破裂的课题。并且，通过狭缝S形成时的热、冲击等，还存在布线基板101的狭缝S的正下方的布线电极断线或者变形的担忧。
发明内容
本发明是鉴于上述的课题而完成的，其目的在于提供能够提高安装部件间的屏蔽特性同时减少布线基板的内部布线电极的变形、断线，并且能够实现小型化的高频模块。
为了实现上述的目的，本发明的高频模块的特征在于，具备：布线基板；多个部件，安装于上述布线基板的一方主面；密封树脂层，层叠于上述布线基板的上述一方主面，并密封上述多个部件；屏蔽壁，在上述密封树脂层内配置于上述多个部件中规定的部件与其他部件之间；以及表层导体，在上述布线基板的上述一方主面与上述屏蔽壁之间配设成在上述布线基板的俯视状态下与上述屏蔽壁重叠，上述屏蔽壁在上述俯视状态下呈具有弯曲部的折线状，且在上述弯曲部具有贯穿上述表层导体的第一突出部。
该情况下，由于屏蔽壁在俯视状态下呈具有弯曲部的折线状，所以与屏蔽壁在俯视状态下形成为直线状的情况相比较，想通过一个屏蔽壁防止噪声的相互干扰的部件的配置自由度提高，与此相伴，容易实现高频模块的小型化。
另外，由于第一突出部贯穿表层导体，所以与通过屏蔽壁与表层导体的表面接触而实现两者的连接的构成相比较，能够可靠地连接屏蔽壁和表层导体。另外，通过表层导体构成接地用的接地电极，或者将表层导体与在布线基板的内部形成的接地电极连接，能够实现屏蔽壁的屏蔽特性的提高。
另外，屏蔽壁由于是在位于弯曲部的第一突出部贯穿表层导体的构成，所以与如以往的通过切割形成屏蔽壁的情况那样，屏蔽壁的表层导体侧的整个端部贯穿表层导体的构成相比较，模块难以破裂，能够减少在布线基板的内部形成的布线电极的断线、变形。
另外，上述屏蔽壁也可以在上述俯视状态下与上述第一突出部不同的位置处还具有贯穿上述表层导体的第二突出部。该情况下，可靠地进行屏蔽壁与表层导体的连接的位置增加，所以屏蔽壁与表层导体的连接性进一步提高。
另外，上述布线基板也可以在上述俯视状态下与上述第一突出部或者上述第二突出部的任意一方重叠的位置处具有设置成在与上述屏蔽壁之间夹持上述表层导体的通孔导体，在俯视状态下与上述通孔导体重叠的上述第一突出部或者上述第二突出部的贯穿上述表层导体的一侧的端部与该通孔导体连接。该情况下，能够将通孔导体和第一或者第二突出部可靠地连接。
另外，上述通孔导体也可以与在上述布线基板的内部形成的接地用的接地电极连接。该情况下，由于能够将屏蔽壁和接地电极可靠地连接，所以能够实现屏蔽壁的屏蔽特性的稳定化。
另外，上述布线基板也可以具有配设成在上述俯视状态下跨越上述屏蔽壁的内部布线电极，上述内部布线电极配设成在上述俯视状态下不与上述第一突出部以及上述第二突出部的任意一方重叠。例如，在通过激光或钻孔形成屏蔽壁的情况下，在屏蔽壁的加工时作用于布线基板的热、冲击在第一、第二突出部的正下方较强。因此，通过将跨越屏蔽壁的内部布线电极配设成不与第一、第二突出部的任意一方重叠，能够减少由于形成屏蔽壁而引起的内部布线电极的断线、变形。
另外，上述表层导体也可以设置成在上述俯视状态下与上述屏蔽壁的一部分重叠，上述屏蔽壁的上述一部分包括上述第一突出部以及上述第二突出部。根据该构成，与表层导体形成为在俯视状态下与整个屏蔽壁重叠的情况相比较，能够增加布线基板的一方主面的布线电极等的设计空间。
另外，上述布线基板是层叠有多个布线层的多层布线基板，上述内部布线电极可以位于上述多个布线层中最接近上述一方主面侧配置的布线层。若内部布线电极位于最接近布线基板的一方主面的布线层，则容易受到屏蔽壁形成时的热、冲击的影响。因此，通过将内部布线电极配置成不与屏蔽壁形成时的热、冲击最强的第一、第二突出部的任意一方重叠，能够减少内部布线电极的断线、变形。
另外，可以还具备保护内部导体，该保护内部导体设置于比设置有上述表层导体的布线层靠下一层的布线层，且在俯视状态下与上述表层导体重叠，上述第一突出部与上述保护内部导体电连接。根据该构成，能够防止位于保护内部导体的下部的层的损伤。
根据本发明，通过第一突出部贯穿表层导体，从而屏蔽壁与表层导体连接，所以能够将屏蔽壁和表层导体可靠地连接。另外，由于屏蔽壁是在第一突出部与表层导体连接的构成，所以与如以往的通过切割形成屏蔽壁的情况那样，屏蔽壁的表层导体侧的整个端部贯穿表层导体的构成相比较，模块难以破裂，能够减少在布线基板的内部形成的布线电极的断线、变形。
附图说明
图1是本发明的第一实施方式所涉及的高频模块的俯视图。
图2是图1的A－A箭头方向的剖视图。
图3是表示图1的屏蔽壁的变形例的图。
图4是表示图1的屏蔽壁的其他的变形例的图。
图5是表示本发明的第二实施方式所涉及的高频模块的图。
图6是表示图5的屏蔽壁的变形例的图。
图7是本发明的第三实施方式所涉及的高频模块的俯视图。
图8是图7的B－B箭头方向的剖视图。
图9是表示图7的屏蔽壁的变形例的图。
图10是表示图7的屏蔽壁的其他的变形例的图。
图11是本发明的第四实施方式所涉及的高频模块的俯视图。
图12是图11的C－C箭头方向的剖视图。
图13是表示图11的内部布线电极的图。
图14是表示图11的表层导体的变形例的图。
图15是本发明的第五实施方式所涉及的高频模块的剖视图。
图16是表示图15的屏蔽壁的变形例的图。
图17是本发明的第六实施方式所涉及的高频模块的剖视图。
图18是表示图17的屏蔽壁的变形例的图。
图19是以往的高频模块的剖视图。
具体实施方式
＜第一实施方式＞
参照图1以及图2对本发明的第一实施方式所涉及的高频模块1a进行说明。其中，图1是高频模块的俯视图，图2是图1的A－A箭头方向的剖视图。另外，在图1中，将屏蔽膜6的顶面部分省略图示。
如图1以及图2所示，该实施方式所涉及的高频模块1a具备：多层布线基板2(相当于本发明的“布线基板”)；多个部件3a、3b，安装于该多层布线基板2的上表面20a；密封树脂层4，层叠于多层布线基板2的上表面20a；屏蔽膜6，覆盖密封树脂层4的表面；屏蔽壁5，设置于密封树脂层4内；以及表层导体8a，配设于多层布线基板2的上表面20a与屏蔽壁5之间，该高频模块1a例如搭载于使用高频信号的电子设备的母板等。
多层布线基板2例如通过由低温共烧陶瓷、玻璃环氧树脂等形成的多个绝缘层2a～2d层叠而成。在多层布线基板2的上表面20a(相当于本发明的“布线基板的一方主面”)形成有各部件3a、3b的安装用的安装电极7、表层导体8a，并且在下表面20c形成有外部连接用的多个外部电极9。另外，在该实施方式中，在相邻的绝缘层2a～2d间分别配置有具有各种内部布线电极10a～12a的布线层10～12。由此，多层布线基板2成为交替地层叠绝缘层2a～2d和布线层10～12这样的结构。另外，在多层布线基板2的内部形成有用于连接不同的布线层10～12的内部布线电极10a～12a彼此的多个通孔导体14。
安装电极7、表层导体8a、外部电极9以及内部布线电极10a～12a均由Cu、Ag、Al等一般作为布线电极采用的金属形成。另外，各通孔导体14由Ag、Cu等金属形成。此外，也可以对于各安装电极7、表层导体8a、各外部电极9分别实施Ni/Au电镀。另外，也可以在表层导体8a上例如接合焊锡膜等保护表层导体8a的金属部件。
各部件3a、3b由Si或GaAs等半导体形成的半导体元件、芯片电感器、芯片电容、芯片电阻等芯片部件构成。
密封树脂层4层叠于多层布线基板2以覆盖多层布线基板2的上表面20a和各部件3a、3b。密封树脂层4能够由环氧树脂等一般作为密封树脂采用的树脂形成。
屏蔽膜6用于屏蔽针对多层布线基板2内的各种内部布线电极10a～12a或各部件3a、3b的来自外部的噪声，层叠于密封树脂层4以覆盖密封树脂层4的与多层布线基板2的上表面20a的相对面4a和周侧面4b以及多层布线基板2的侧面20b。此外，屏蔽膜6与在多层布线基板2的侧面20b露出的接地电极(省略图示)连接。
另外，屏蔽膜6能够由具有层叠于密封树脂层4的表面的紧贴膜、层叠于紧贴膜的导电膜以及层叠于导电膜的保护膜的多层结构形成。
紧贴膜是为了提高导电膜与密封树脂层4的紧贴强度而设置，例如，能够由SUS等金属形成。导电膜是担负屏蔽膜6的实质性屏蔽功能的层，例如，能够由Cu、Ag、Al中的任意一种的金属形成。保护膜是为了防止导电膜腐蚀或者损伤而设置，例如，能够由SUS形成。
屏蔽壁5在密封树脂层4内配置于规定的部件3a、3b间。具体而言，如图1所示，该实施方式的屏蔽壁5配设成将多层布线基板2的上表面20a划分为2个区域，在该划分出的区域间的各部件3a、3b之间防止噪声的相互干扰。另外，屏蔽壁5的上端部与屏蔽膜6的顶面电连接。
另外，屏蔽壁5在多层布线基板2的俯视面(从与多层布线基板2的上表面20a垂直的方向观察的俯视面，以下称为俯视面)上呈具有2个弯曲部5a1、5a2的折线状。其中，在图1中，屏蔽壁5的弯曲部5a1、5a2所形成的角度在俯视状态下是90°，但在本发明中，弯曲部5a1、5a2所形成的角度也可以不是90°，另外，并不限定为锐角或钝角。
表层导体8a在多层布线基板2的上表面20a与屏蔽壁5之间，配置成在俯视状态下与屏蔽壁5重叠。具体而言，表层导体8a在俯视状态下是如将屏蔽壁5投影了的那样的线状，且形成为比屏蔽壁5宽的折线状。此外，表层导体8a与设置于多层布线基板2的内部的布线层10～12的接地用的接地电极(省略图示)连接。
若对屏蔽壁5与表层导体8a的连接结构进行说明，则如图2所示，在屏蔽壁5的下端部，在俯视状态下与弯曲部5a1、5a2重叠的各位置设置有突出部5b1、5b2(相当于本发明的“第一突出部”)。两突出部5b1、5b2均通过形成为贯穿表层导体8a，且前端进入多层布线基板2的内部，来与表层导体8a连接。屏蔽壁5的下端部的其他的部分通过设置成不贯穿表层导体8a地相接从而与表层导体8a连接。
屏蔽壁5例如由含有Cu、Ag、Al的任意一种金属填料的导电性糊形成。此外，也能够通过借助激光加工等在密封树脂层4形成屏蔽壁5用的槽，并使用溅射等成膜技术在该槽形成金属膜，来形成屏蔽壁5。
(高频模块的制造方法)
接下来，对高频模块1a的制造方法进行说明。首先，准备形成安装电极7、表层导体8a、各布线层10～12以及通孔导体14的多层布线基板2。
接下来，使用焊锡安装等公知的表面安装技术在多层布线基板2的上表面20a安装各部件3a、3b。
接下来，在多层布线基板2的上表面20a层叠密封树脂层4以覆盖各部件3a、3b。密封树脂层4例如能够通过涂覆方式、打印方式、传递模塑方式、压缩模塑方式等形成。
接下来，为了使密封树脂层4的相对面4a平坦化，而对密封树脂层4的表面进行研磨或者研削。
接下来，从密封树脂层4的相对面4a侧向配置屏蔽壁5的位置照射激光来形成槽。此时，屏蔽壁5用的槽以在俯视状态下与表层导体8a重叠的方式形成为具有2个弯曲部5a1、5a2的折线状。此时，在屏蔽壁5用的槽的两弯曲部5a1、5a2以外的部分，形成表层导体8a露出的程度的槽，在两弯曲部5a1、5a2中形成贯穿表层导体8a的深槽。槽的深度的调整例如能够通过改变激光的照射时间来实现。此外，也可以通过钻孔形成屏蔽壁5用的槽。
在切割中，使屏蔽壁5用的槽成为直线状(俯视状态下形状)以外的形状，或者在中途改变槽的深度较困难。与此相对，激光加工、钻孔加工则容易使该槽成为折线形状或弯曲线形状或者在中途改变槽的深度。
接下来，通过涂覆方式或打印方式等，例如，将含有Cu填料的导电性糊填充到在密封树脂层4形成的槽来形成屏蔽壁5。此时，在形成有深槽的弯曲部5a1、5a2形成有贯穿表层导体8a的突出部5b1、5b2。
接下来，使用溅射装置或真空蒸镀装置将屏蔽膜6成膜以便覆盖密封树脂层4的表面(相对面4a以及周侧面4b)和多层布线基板2的侧面20b，从而完成高频模块1a。此外，也可以使用与屏蔽膜6相同的成膜技术形成屏蔽壁5。该情况下，在屏蔽膜6的成膜时一并填充屏蔽壁5用的槽即可。
因此，根据上述的实施方式，屏蔽壁5在俯视状态下呈具有弯曲部5a1、5a2的折线状，所以与屏蔽壁5形成为直线状的情况相比较，想通过一个屏蔽壁5防止噪声的相互干扰的部件3a、3b的配置自由度提高，与此相伴，高频模块的小型化变得容易。
另外，屏蔽壁5通过突出部5b1、5b2贯穿表层导体8a来与表层导体8a连接，所以与仅通过屏蔽壁5与表层导体8a的表面接触而两者连接的构成相比较，能够可靠地连接屏蔽壁5和表层导体8a。另外，由于表层导体8a与接地电极连接，所以还能够实现屏蔽壁5的屏蔽特性的稳定化。
另外，由于是仅屏蔽壁5的突出部5b1、5b2贯穿表层导体8a的构成，所以与如以往的通过切割形成屏蔽壁的情况那样，屏蔽壁的表层导体侧的整个端部贯穿表层导体的构成相比较，能够减少多层布线基板2的内部布线电极10a～12a的断线、变形。另外，为了抑制内部布线电极10a～12a的断线、变形而必须将各内部布线电极10a～12a配设成在俯视状态下不与屏蔽壁5重叠这样的限制消失或者减少，所以内部布线电极10a～12a的设计自由度提高。
(屏蔽壁的变形例)
参照图3以及图4对屏蔽壁5的变形例进行说明。此外，图3以及图4均是表示屏蔽壁5的变形例的图，是与图2对应的图。
屏蔽壁5的突出部的方式能够适当地变更。例如，如图3所示，屏蔽壁50也可以在与弯曲部5a1、5a2不同的位置处具有贯穿表层导体8a的其他的突出部5b3(相当于本发明的“第二突出部”)。该情况下，可靠地进行屏蔽壁50与表层导体8a的连接的位置增加，所以屏蔽壁50与表层导体8a的连接性进一步提高。
另外，如图4所示，屏蔽壁51的突出部5b4也可以如在俯视状态下在两弯曲部5a1、5a2间的整个区域突出设置并在该区域贯穿表层导体8a那样的结构。该情况下，可靠地进行屏蔽壁51与表层导体8a的连接的区域增加，所以屏蔽壁51与表层导体8a的连接性进一步提高。
＜第二实施方式＞
参照图5对本发明的第二实施方式所涉及的高频模块1b进行说明。其中，图5是高频模块1b的俯视图，是与图1对应的图。
如图5所示，该实施方式所涉及的高频模块1b与参照图1以及图2进行说明的第一实施方式的高频模块1a不同之处在于屏蔽壁52的俯视面形状不同。其他的构成与第一实施方式的高频模块1a相同，所以通过标注同一附图标记来省略说明。
该情况下，屏蔽壁52形成为在俯视状态下端部5a3以及两弯曲部5a1、5a2的宽度W1比其他的部分的宽度W2宽。例如，在通过激光加工形成屏蔽壁52用的槽的情况下，在端部5a3和弯曲部5a1、5a2处被照射的激光的能量容易比其他的部分大。这样一来，屏蔽壁52用的槽形成为端部5a3以及弯曲部5a1、5a2与其他的部分相比，宽度宽并且深。通过利用这样的现象，不进行激光条件的详细设定就能够形成屏蔽壁52用的槽。此外，该情况下，除了两弯曲部5a1、5a2以外，还可以在两端部5a3设置贯穿表层导体8a的突出部。
(屏蔽壁的变形例)
上述的屏蔽壁52设置成将多层布线基板2的上表面20a划分为2个区域，但也可以例如，如图6所示，是仅在想特别地防止噪声的相互干扰的部件间设置屏蔽壁53的构成。该情况下，表层导体8b也仅设置于在俯视状态下与屏蔽壁53重叠的部分。这样一来，能够增加多层布线基板2的上表面20a的空余空间，所以能够实现布线电极等的设计自由度的提高。
＜第三实施方式＞
参照图7以及图8对本发明的第三实施方式所涉及的高频模块1c进行说明。其中，图7是高频模块1c的俯视图，是与图1对应的图，图8是图7的B－B箭头方向的剖视图。
如图7所示，该实施方式所涉及的高频模块1c与参照图1以及图2进行说明的第一实施方式的高频模块1a不同之处在于屏蔽壁54以及安装于多层布线基板2的部件3c～3f的构成不同。其他的构成与第一实施方式的高频模块1a相同，所以通过标注同一附图标记来省略说明。
该情况下，屏蔽壁54设置成将多层布线基板2的上表面20a划分为4个区域。此时，屏蔽壁54在俯视状态下形成为具有一个弯曲部5a4和2个分岔部5a5、5a6的线状。另外，表层导体8c以在俯视状态下如将屏蔽壁54投影了的那样的形状形成为比该屏蔽壁54宽。
另外，如图8所示，屏蔽壁54在这些弯曲部5a4以及两分岔部5a5、5a6分别设置有贯穿表层导体8c的突出部5b4、5b5。另外，在多层布线基板2，在与突出部5b4、5b5重叠的各位置处以在与屏蔽壁54之间夹持表层导体8c的方式设置有通孔导体14a、14b。各突出部5b4、5b5均在贯穿表层导体8c的一侧的端部进入通孔导体14a、14b的内部的状态下与该通孔导体14a、14b连接。另外，这些通孔导体14a、14b与设置于多层布线基板2的布线层10～12的省略图示的接地用的接地电极连接。此外，不需要通孔导体14a、14b全部与接地电极，至少一个与接地电极连接即可。
另外，如图7所示，屏蔽壁54的两分岔部5a5、5a6附近具有折线状的部分和从该折线的弯曲点向不同的方向延伸的直线部分合成而得的那样的形状，所以两分岔部5a5、5a6均相当于本发明的“弯曲部”。
根据该构成，能够通过通孔导体14a、14b将屏蔽壁54和接地电极可靠地连接，并且能够降低屏蔽壁54与接地电极的连接电阻。另外，能够通过通孔导体14a、14b吸收形成屏蔽壁54用的槽时的热、冲击，所以能够减少由于形成屏蔽壁54而引起的内部布线电极10a～12a的断线、变形。
(屏蔽壁的变形例)
接下来，参照图9以及图10对屏蔽壁54的变形例进行说明。其中，图9以及图10均是表示本例所涉及的屏蔽壁55、56的图，是与图8对应的图。
例如，如图9所示，屏蔽壁55还可以在与弯曲部5a4、分岔部5a5、5a6不同的位置也具有突出部5b6。该情况下，在多层布线基板2的俯视状态下与各突出部5b6重叠的各位置设置有与屏蔽壁54同样的通孔导体14c。此时，各突出部5b6的贯穿表层导体8c的一侧的端部分别与通孔导体14c连接。
根据该构成，可靠地进行屏蔽壁55与表层导体8c的连接的位置增加，所以屏蔽壁55与表层导体8c以及接地电极的连接性进一步提高。另外，吸收形成屏蔽壁55用的槽时的热、冲击的通孔导体14a～14c的数量增加，所以能够进一步减少由于该槽形成时的热、冲击所引起的内部布线电极10a～12a的断线、变形。
另外，如图10所示，屏蔽壁56还可以是在与弯曲部5a4或分岔部5a5、5a6不同的位置也具有突出部5b7，在多层布线基板2的俯视状态下与该突出部5b7重叠的位置未设置通孔导体的构成。该情况下，与图8所示的屏蔽壁54相比较，能够提高表层导体8c与屏蔽壁56的连接性。
此外，设置于在俯视状态下与弯曲部5a4、分岔部5a5、5a6重叠的位置的各突出部5b4、5b5分别相当于本发明的“第一突出部”，其他的各突出部5b6、5b7分别相当于本发明的“第二突出部”。
＜第四实施方式＞
参照图11～图13对本发明的第四实施方式所涉及的高频模块1d进行说明。其中，图11是高频模块1d的俯视图，是与图1对应的图，图12是图11的C－C箭头方向的剖视图，图13是示出图11的内部布线电极10a的一个例子的图。另外，在图13中，仅图示出屏蔽壁57、表层导体8a、屏蔽膜6、多层布线基板2以及布线层10的各内部布线电极10a，省略图示其他的构成。
如图11以及图12所示，该实施方式所涉及的高频模块1d与参照图1以及图2进行说明的第一实施方式的高频模块1a不同之处在于屏蔽壁57的构成不同。其他的构成与第一实施方式的高频模块1a相同，所以通过标注同一附图标记来省略说明。
该情况下，屏蔽壁57具有设置于在俯视状态下与2个弯曲部5a1、5a2重叠的各位置的突出部5b8、5b9(相当于本发明的“第一突出部”)、设置于与突出部5b8、5b9不同的位置的多个突出部5b10(相当于本发明的“第二突出部”)。另外，如图12所示，屏蔽壁57的突出部5b8、5b9、5b10以外的位置在屏蔽壁57的下端部与表层导体8a之间形成有缝隙，在该缝隙配置有密封树脂层4的树脂。此外，图11的屏蔽壁57的斜线部分示出设置有突出部5b8、5b9、5b10的位置。
另外，如图13所示，在接近各突出部5b8、5b9、5b10的最上层的布线层10设置有配设成在俯视状态下跨越屏蔽壁57的多个内部布线电极10a。此时，各内部布线电极10a均配设成在俯视状态下不与突出部5b8、5b9、5b10重叠。
根据该构成，各内部布线电极10a分别配设成在俯视状态下不与任一突出部5b8、5b9、5b10重叠，所以能够减少由于屏蔽壁57的形成时的热、冲击所引起的内部布线电极10a的断线、变形。另外，屏蔽壁57在俯视状态下与各内部布线电极10a重叠的部分，形成为在与表层导体8a之间有缝隙，所以能够抑制在屏蔽壁57用的槽的形成时作用于内部布线电极10a的热、冲击。
(表层导体的变形例)
图11的表层导体8a若形成于至少在俯视状态下与各突出部5b8～5b10重叠的区域，则其俯视面形状能够适当地变更。例如，如图14所示，表层导体8d仅设置于在俯视状态下与作为屏蔽壁57的一部分的各突出部5b8、5b9、5b10重叠的区域。根据该构成，与表层导体形成为在俯视状态下与整个屏蔽壁57重叠的情况相比较，能够增加多层布线基板2的上表面20a的布线电极等的设计空间。
＜第五实施方式＞
参照图15对本发明的第五实施方式所涉及的高频模块1e进行说明。其中，图15是高频模块1e的剖视图，与图7的B－B箭头方向的剖视图对应。
该实施方式所涉及的高频模块1e与参照图7以及图8进行说明的第三实施方式的高频模块1c不同之处在于屏蔽壁58的构成和设置有保护内部导体60。其他的构成与第三实施方式的高频模块1c实际相同，所以通过标注同一附图标记来省略说明。
如图15所示，高频模块1e是在比设置有表层导体8c的内部布线层(相当于本发明的“布线层”)靠下一层的内部布线层设置有在俯视状态下与表层导体8c一部分重叠的保护内部导体60的结构。屏蔽壁58的突出部5b11、5b12(相当于本发明的“第一突出部”)与保护内部导体60接触并电连接，不贯穿保护内部导体60。在制造时，从密封树脂层4的相对面4a侧在配置屏蔽壁58的位置形成槽时，贯穿保护内部导体60形成槽，以免损伤位于保护内部导体60的下部的绝缘层2b。由此，能够防止损伤位于保护内部导体60的下部的绝缘层2b的损伤。此外，若突出部5b11、5b12至少与表层导体8c电连接，则也可以不与保护内部导体60连接。
接下来，参照图16对屏蔽壁58的变形例进行说明。其中，图16是表示屏蔽壁58的变形例的图，与图15对应。
如图16所示，屏蔽壁59的突出部5b13是在俯视状态下在两弯曲部间的整个区域突出设置，不贯穿保护内部导体60，但在该区域贯穿表层导体8c的结构。该情况下，防止位于保护内部导体60的下部的绝缘层2b的损伤，并且可靠地进行屏蔽壁59与保护内部导体60的连接的区域增加，所以屏蔽壁59与保护内部导体60的连接性进一步提高。
＜第六实施方式＞
参照图17对本发明的第六实施方式所涉及的高频模块1f进行说明。此外，图17是高频模块1f的剖视图，与图7的B－B箭头方向的剖视图对应。
该实施方式所涉及的高频模块1f与参照图15说明的第五实施方式的高频模块1e的不同之处在于屏蔽壁58A的构成和形成有多个将表层导体8c和保护内部导体60电连接的通孔导体14d。其他的构成与第五实施方式的高频模块1e实际相同，所以通过标注同一附图标记而省略说明。
图17所示，高频模块1f是在比设置有表层导体8c的内部布线层(相当于本发明的“布线层”)靠下一层的内部布线层形成在俯视状态下与表层导体8c一部分重叠的保护内部导体60，并沿着表层导体8c的图17的横向(图17中所示的x方向)配置多个连接表层导体8c和保护内部导体60的通孔导体14d的结构。屏蔽壁58A的突出部5b14、5b15(相当于本发明的“第一突出部”)经由通孔导体14d与保护内部导体60电连接。由此，表层导体8c和保护内部导体60间的屏蔽性进一步提高。
接下来，参照图18对屏蔽壁58A的变形例进行说明。此外，图18是表示屏蔽壁58A的变形例的图，与图17对应。
如图18所示，是屏蔽壁59A的突出部5b16在俯视状态下在两弯曲部间的整个区域突出设置，不贯穿保护内部导体60但在该区域贯穿表层导体8c的结构。该情况下，屏蔽壁59A与保护内部导体60的连接面积增加，所以表层导体8c与保护内部导体60之间的屏蔽性进一步提高。
此外，本发明并不局限于上述的各实施方式，只要不脱离其主旨，除了上述的方式以外还能够进行各种变更。例如，也可以组合上述的各实施方式或变形例的构成。
另外，在上述的各实施方式中，对屏蔽壁5、50～57配设成在俯视状态下将多层布线基板2的上表面20a划分成多个区域的情况进行了说明，但例如也可以形成为屏蔽壁5、50～57包围规定的部件3a～3f的周围。
另外，构成多层布线基板2的绝缘层或布线层的层数能够适当地变更。
工业上的可用性
本发明能够应用于具备覆盖安装于布线基板的部件的密封树脂层和防止部件间的噪声的相互干扰的屏蔽壁的各种高频模块。
附图标记说明
1a～1d...高频模块；2...多层布线基板(布线基板)；3a～3f...部件；4...密封树脂层；5、50～57...屏蔽壁；5a1、5a2、5a4...弯曲部；5a5、5a6...分岔部(弯曲部)；5b1、5b2、5b4、5b5、5b8、5b9...突出部(第一突出部)；5b3、5b6、5b7、5b10...突出部(第二突出部)；8a～8d...表层导体；10a...内部布线电极；14a～14c...通孔导体。

Claims (7)

1.一种高频模块，其特征在于，具备：
布线基板；
多个部件，安装于上述布线基板的一方主面；
密封树脂层，层叠于上述布线基板的上述一方主面，并密封上述多个部件；
屏蔽壁，在上述密封树脂层内被配置于上述多个部件中规定的部件与其他部件之间；以及
表层导体，在上述布线基板的上述一方主面与上述屏蔽壁之间配设成在上述布线基板的俯视状态下与上述屏蔽壁重叠，
上述屏蔽壁在上述俯视状态下呈具有弯曲部的折线状，且在上述弯曲部具有贯穿上述表层导体的第一突出部，
上述屏蔽壁还具有第二突出部，所述第二突出部在上述俯视状态下与上述第一突出部不同的位置处贯穿上述表层导体。
2.根据权利要求1所述的高频模块，其特征在于，
上述布线基板在上述俯视状态下与上述第一突出部或者上述第二突出部的任意一方重叠的位置处具有设置成在与上述屏蔽壁之间夹持上述表层导体的通孔导体，
在俯视状态下与上述通孔导体重叠的上述第一突出部或者上述第二突出部的贯穿上述表层导体的一侧的端部与该通孔导体连接。
3.根据权利要求2所述的高频模块，其特征在于，
上述通孔导体与在上述布线基板的内部形成的接地用的接地电极连接。
4.根据权利要求1至3中的任意一项所述的高频模块，其特征在于，
上述布线基板具有配设成在上述俯视状态下跨越上述屏蔽壁的内部布线电极，
上述内部布线电极配设成在上述俯视状态下不与上述第一突出部以及上述第二突出部的任意一方重叠。
5.根据权利要求1至3中的任意一项所述的高频模块，其特征在于，
上述表层导体设置成在上述俯视状态下与上述屏蔽壁的一部分重叠，
上述屏蔽壁的上述一部分包括上述第一突出部以及上述第二突出部。
6.根据权利要求4所述的高频模块，其特征在于，
上述布线基板是层叠有多个布线层的多层布线基板，
上述内部布线电极位于上述多个布线层中最接近上述一方主面侧配置的布线层。
7.根据权利要求1至3中的任意一项所述的高频模块，其特征在于，
还具备保护内部导体，该保护内部导体设置于比设置有上述表层导体的布线层靠下一层的布线层，且在俯视状态下与上述表层导体重叠，上述第一突出部与上述保护内部导体电连接。
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