CN107644876A - 台阶结构及其形成方法 - Google Patents

台阶结构及其形成方法 Download PDF

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CN107644876A
CN107644876A CN201710750398.4A CN201710750398A CN107644876A CN 107644876 A CN107644876 A CN 107644876A CN 201710750398 A CN201710750398 A CN 201710750398A CN 107644876 A CN107644876 A CN 107644876A
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CN107644876B (zh
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吕震宇
陈俊
戴晓望
朱继锋
陶谦
黄郁茹
胡思平
姚兰
肖莉红
郑阿曼
鲍琨
杨号号
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Yangtze Memory Technologies Co Ltd
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Yangtze Memory Technologies Co Ltd
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Priority to CN201710750398.4A priority Critical patent/CN107644876B/zh
Publication of CN107644876A publication Critical patent/CN107644876A/zh
Priority to PCT/CN2018/098962 priority patent/WO2019042091A1/en
Priority to CN201880005628.7A priority patent/CN110121777A/zh
Priority to CN202110745130.8A priority patent/CN113241350B/zh
Priority to TW107127920A priority patent/TWI721303B/zh
Priority to US16/126,956 priority patent/US10680003B2/en
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Publication of CN107644876B publication Critical patent/CN107644876B/zh
Priority to US16/885,858 priority patent/US11145666B2/en
Priority to US17/447,456 priority patent/US12010838B2/en
Priority to US18/054,468 priority patent/US20230083030A1/en
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Abstract

本发明公开了一种台阶结构及其形成方法，属于半导体技术领域。所述方法包括：提供衬底，在衬底上形成叠层结构，在叠层结构上形成第一掩膜层；刻蚀第一掩膜层和叠层结构形成各台阶层；在各台阶层上形成着陆垫；去除剩余的第一掩膜层，并形成覆盖各台阶层的覆盖层。本发明中，通过在各台阶层上形成着陆垫，增加了台阶层之间互联部分的厚度，使得即使是很薄的字线需求，通过单张掩膜来形成台阶间的互连亦是可行的。

Description

台阶结构及其形成方法
技术领域
本发明涉及半导体技术领域，尤其涉及一种台阶结构及其形成方法。
背景技术
闪存是一种非易变性的存储器，是电可擦除且可编程的只读存储器的一种特殊结构，其运作原理是通过改变晶体管或存储单元的临界电压来控制门极通道的开关以达到存储数据的目的，使存储在存储器中的数据不会因电源中断而消失。闪存以其便捷、存储密度高、可靠性好等优点成为非挥发性存储器研究的热点。从二十世纪八十年代第一个闪存产品问世以来，随着技术的发展和各类电子产品对存储的需求，闪存被广泛的应用于手机、笔记本、掌上电脑和U盘等移动和通讯设备中，并占据了非挥发性半导体存储器的大部分市场份额。
如今，经历了平面型闪存存储器的发展时期，已进入了三维闪存存储器的发展热潮，其主要特色是将平面结构转换为立体结构，通过光刻工艺形成台阶结构，在台阶结构中形成多个横向和纵向的存储单元阵列，并通过在台阶结构中形成水平方向上的字线(Wordline)和竖直方向的位线(Bit line)来准确定位各存储区，进而对存储区中的数据进行操作。目前的三维存储器，其台阶结构中字线的厚度是均匀的，然而，随着人们对存储器的容量及体积的要求不断提升，使形成台阶结构的堆栈会不断减小，从而字线的厚度会越来越小，进而导致用单个掩膜来创建台阶间的互连会越来越困难。
发明内容
为解决现有技术的不足，本发明提供一种台阶结构及其形成方法。
一方面，本发明提供一种台阶结构的形成方法，包括：
提供衬底，在所述衬底上形成叠层结构，在所述叠层结构上形成第一掩膜层；
刻蚀所述第一掩膜层和所述叠层结构形成各台阶层；
在各台阶层上形成着陆垫；
去除剩余的第一掩膜层，并形成覆盖各台阶层的覆盖层。
可选地，所述刻蚀所述第一掩膜层和所述叠层结构形成各台阶层，具体为：在所述第一掩膜层上旋涂光阻层，以所述光阻层为掩膜，多次刻蚀所述第一掩膜层和所述叠层结构形成各台阶层。
可选地，所述叠层结构，具体为多个层叠的氮氧层组，所述氮氧层组自上至下依次为氧化物层和氮化物层；
刻蚀所述第一掩膜层和所述叠层结构形成的各台阶层分别对应一个所述氮氧层组。
可选地，所述在各台阶层上形成着陆垫，具体包括：
在除最底层台阶层外的其他台阶层中，去除部分氮化物层，使氮化物层相对于氧化物层凹陷，形成第一凹陷结构；
形成第二掩膜层，所述第二掩膜层覆盖各台阶层及剩余的第一掩膜层，并将所述第一凹陷结构完全填充；
去除第二掩膜层，并在所述第一凹陷结构中形成填充结构，所述填充结构高于所述第一凹陷结构并覆盖部分对应的氧化物层的侧面；
去除各台阶层中的氧化物层，呈现各台阶层中的氮化物层；
形成加固层，所述加固层覆盖各台阶层中的氮化物层、填充结构及剩余的第一掩膜层；
去除部分加固层、所述填充结构和部分剩余的第一掩膜层，形成各台阶层的着陆垫，使除最底层台阶层外的各台阶层的氮化物层相对于对应的着陆垫凹陷，形成第二凹陷结构。
可选地，所述去除剩余的第一掩膜层，并形成覆盖各台阶层的覆盖层，具体为：去除当前剩余的第一掩膜层及其上的加固层和其下的氧化物层，并形成覆盖层，所述覆盖层将所述第二凹陷结构完全填充，并覆盖各台阶层。
另一方面，本发明提供一种台阶结构，包括：
衬底及衬底上的叠层结构；
形成于所述叠层结构上的各台阶层；
形成于各台阶层上的着陆垫；
覆盖各台阶层的覆盖层。
可选地，所述叠层结构，具体为多个层叠的氮氧层组，所述氮氧层组自上至下依次为氧化物层和氮化物层。
可选地，各台阶层分别对应一个氮氧层组，各台阶层的氮化物层相对于对应的着陆垫凹陷，形成第二凹陷结构。
可选地，所述覆盖层将所述第二凹陷结构完全填充，并覆盖各台阶层。
本发明的优点在于：
本发明中，通过在各台阶层上形成着陆垫，增加了台阶层之间互联部分的厚度，使得即使是很薄的字线需求，通过单张掩膜来形成台阶间的互连亦是可行的。
附图说明
通过阅读下文优选实施方式的详细描述，各种其他的优点和益处对于本领域普通技术人员将变得清楚明了。附图仅用于示出优选实施方式的目的，而并不认为是对本发明的限制。而且在整个附图中，用相同的参考符号表示相同的部件。在附图中：
附图1为本发明提供的一种形成台阶结构的方法流程图；
附图2和附图3为本发明提供的形成台阶层的结构变化示意图；
附图4至附图9为本发明提供的形成着陆垫的结构变化示意图；
附图10为本发明提供的部分台阶结构示意图。
具体实施方式
下面将参照附图更详细地描述本公开的示例性实施方式。虽然附图中显示了本公开的示例性实施方式，然而应当理解，可以以各种形式实现本公开而不应被这里阐述的实施方式所限制。相反，提供这些实施方式是为了能够更透彻地理解本公开，并且能够将本公开的范围完整的传达给本领域的技术人员。
实施例一
根据本发明的实施方式，提供一种台阶结构的形成方法，如图1所示，包括：
提供衬底，在衬底上形成叠层结构，在叠层结构上形成第一掩膜层；
刻蚀第一掩膜层和叠层结构形成各台阶层；
在各台阶层上形成着陆垫(Landing Pad)；
去除剩余的第一掩膜层，并形成覆盖各台阶层的覆盖层。
根据本发明的实施方式，刻蚀第一掩膜层和叠层结构形成各台阶层，具体为：在第一掩膜层上旋涂光阻层，以光阻层为掩膜，多次刻蚀第一掩膜层和叠层结构形成各台阶层。
根据本发明的实施方式，如图2和图3所示，叠层结构，具体为多个层叠的氮氧层组，氮氧层组自上至下依次为氧化物层(图中未示出)和氮化物层(图中未示出)；
对应地，刻蚀第一掩膜层和叠层结构形成的各台阶层分别对应一个氮氧层组。
需要说明地，在本实施例中，对叠层结构的氮氧层组的数量及形成的台阶层的数量不作具体限定，具体依需求而定，附图仅用于示例说明。
根据本发明的实施方式，在各台阶层上形成着陆垫，如图4至图9所示，具体包括：
在除最底层台阶层外的其他台阶层中，去除部分氮化物层，使氮化物层相对于氧化物层凹陷，形成第一凹陷结构(Nitride Recess)；
形成第二掩膜层，第二掩膜层覆盖各台阶层及剩余的第一掩膜层，并将第一凹陷结构完全填充(Poly Dep)；
去除第二掩膜层，并在第一凹陷结构中形成填充结构，填充结构高于第一凹陷结构并覆盖部分对应的氧化物层的侧面(Poly Etch)；
去除各台阶层中的氧化物层，呈现各台阶层中的氮化物层(Oxide Etch)；
形成加固层，加固层覆盖各台阶层中的氮化物层、填充结构及剩余的第一掩膜层(Niteide Dep)；
去除部分加固层、填充结构和部分剩余的第一掩膜层，形成各台阶层的着陆垫，使除最底层台阶层外的各台阶层的氮化物层相对于对应的着陆垫凹陷，形成第二凹陷结构(Nitride/Poly Recess)。
其中，第二掩膜层具体为多晶硅，加固层具体为氮化物。
根据本发明的实施方式，采用低压化学气相沉积(Low Pressure Chemical VaporDeposition，简称LPCVD)的方法和/或等离子体增强化学气相沉积(Plasma EnhancedChemical Vapor Deposition，简称PECVD)的方法形成第二掩膜层；
根据本发明的实施方式，采用干法刻蚀(Dry Etch)工艺去除第二掩膜层，并在第一凹陷结构中形成填充结构；
根据本发明的实施方式，采用不良梯形覆盖共形工艺(Poor Step CoverageConformal Process)形成加固层。
进一步地，在本实施例中，去除剩余的第一掩膜层，并形成覆盖各台阶层的覆盖层，具体为：去除当前剩余的第一掩膜层及其上的加固层和其下的氧化物层，并形成覆盖层，覆盖层将第二凹陷结构完全填充，并覆盖各台阶层。
实施例二
根据本发明的实施方式，提供一种台阶结构，包括：
衬底及衬底上的叠层结构；
形成于叠层结构上的各台阶层；
形成于各台阶层上的着陆垫；
覆盖各台阶层的覆盖层。
根据本发明的实施方式，叠层结构，具体为多个层叠的氮氧层组，氮氧层组自上至下依次为氧化物层和氮化物层。
根据本发明的实施方式，各台阶层分别对应一个氮氧层组，各台阶层的氮化物层相对于对应的着陆垫凹陷，形成第二凹陷结构。
根据本发明的实施方式，覆盖层将第二凹陷结构完全填充，，并覆盖各台阶层。
本发明中，通过在各台阶层上形成着陆垫，增加了台阶层之间互联部分的厚度，使得即使是很薄的字线需求，通过单张掩膜来形成台阶间的互连亦是可行的。
以上所述，仅为本发明较佳的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到的变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应以所述权利要求的保护范围为准。

Claims (9)

1.一种台阶结构的形成方法，其特征在于，包括：
提供衬底，在所述衬底上形成叠层结构，在所述叠层结构上形成第一掩膜层；
刻蚀所述第一掩膜层和所述叠层结构形成各台阶层；
在各台阶层上形成着陆垫；
去除剩余的第一掩膜层，并形成覆盖各台阶层的覆盖层。
2.根据权利要求1所述的方法，其特征在于，所述刻蚀所述第一掩膜层和所述叠层结构形成各台阶层，具体为：在所述第一掩膜层上旋涂光阻层，以所述光阻层为掩膜，多次刻蚀所述第一掩膜层和所述叠层结构形成各台阶层。
3.根据权利要求1所述的方法，其特征在于，
所述叠层结构，具体为多个层叠的氮氧层组，所述氮氧层组自上至下依次为氧化物层和氮化物层；
刻蚀所述第一掩膜层和所述叠层结构形成的各台阶层分别对应一个所述氮氧层组。
4.根据权利要求3所述的方法，其特征在于，所述在各台阶层上形成着陆垫，具体包括：
在除最底层台阶层外的其他台阶层中，去除部分氮化物层，使氮化物层相对于氧化物层凹陷，形成第一凹陷结构；
形成第二掩膜层，所述第二掩膜层覆盖各台阶层及剩余的第一掩膜层，并将所述第一凹陷结构完全填充；
去除第二掩膜层，并在所述第一凹陷结构中形成填充结构，所述填充结构高于所述第一凹陷结构并覆盖部分对应的氧化物层的侧面；
去除各台阶层中的氧化物层，呈现各台阶层中的氮化物层；
形成加固层，所述加固层覆盖各台阶层中的氮化物层、填充结构及剩余的第一掩膜层；
去除部分加固层、所述填充结构和部分剩余的第一掩膜层，形成各台阶层的着陆垫，使除最底层台阶层外的各台阶层的氮化物层相对于对应的着陆垫凹陷，形成第二凹陷结构。
5.根据权利要求4所述的方法，其特征在于，所述去除剩余的第一掩膜层，并形成覆盖各台阶层的覆盖层，具体为：去除当前剩余的第一掩膜层及其上的加固层和其下的氧化物层，并形成覆盖层，所述覆盖层将所述第二凹陷结构完全填充，并覆盖各台阶层。
6.一种台阶结构，其特征在于，包括：
衬底及衬底上的叠层结构；
形成于所述叠层结构上的各台阶层；
形成于各台阶层上的着陆垫；
覆盖各台阶层的覆盖层。
7.根据权利要求6所述的台阶结构，其特征在于，所述叠层结构，具体为多个层叠的氮氧层组，所述氮氧层组自上至下依次为氧化物层和氮化物层。
8.根据权利要求7所述的台阶结构，其特征在于，各台阶层分别对应一个氮氧层组，各台阶层的氮化物层相对于对应的着陆垫凹陷，形成第二凹陷结构。
9.根据权利要求8所述的台阶结构，其特征在于，所述覆盖层将所述第二凹陷结构完全填充，并覆盖各台阶层。
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US11145666B2 (en) 2021-10-12
US10680003B2 (en) 2020-06-09
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US20200295019A1 (en) 2020-09-17
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