CN107636803B - 基板处理装置及基板处理方法 - Google Patents

基板处理装置及基板处理方法 Download PDF

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Publication number
CN107636803B
CN107636803B CN201680031648.2A CN201680031648A CN107636803B CN 107636803 B CN107636803 B CN 107636803B CN 201680031648 A CN201680031648 A CN 201680031648A CN 107636803 B CN107636803 B CN 107636803B
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substrate
liquid
processing
unit
treatment
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Chinese (zh)
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CN107636803A (zh
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田中裕二
浅井正也
春本将彦
金山幸司
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Screen Holdings Co Ltd
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Screen Holdings Co Ltd
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/3092—Recovery of material; Waste processing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2043—Photolithographic processes using an anti-reflective coating

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
CN201680031648.2A 2015-06-22 2016-04-15 基板处理装置及基板处理方法 Active CN107636803B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2015124777A JP6603487B2 (ja) 2015-06-22 2015-06-22 基板処理装置および基板処理方法
JP2015-124777 2015-06-22
PCT/JP2016/002054 WO2016208103A1 (ja) 2015-06-22 2016-04-15 基板処理装置および基板処理方法

Publications (2)

Publication Number Publication Date
CN107636803A CN107636803A (zh) 2018-01-26
CN107636803B true CN107636803B (zh) 2021-06-11

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Country Status (6)

Country Link
US (1) US10331034B2 (https=)
JP (1) JP6603487B2 (https=)
KR (1) KR102103629B1 (https=)
CN (1) CN107636803B (https=)
TW (1) TWI603379B (https=)
WO (1) WO2016208103A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111630639B (zh) * 2018-01-30 2024-10-01 东京毅力科创株式会社 基板处理方法、基板处理装置和蚀刻液
JP6688860B2 (ja) * 2018-10-24 2020-04-28 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP7189733B2 (ja) * 2018-11-07 2022-12-14 株式会社Ｓｃｒｅｅｎホールディングス 処理カップユニットおよび基板処理装置
KR102671541B1 (ko) * 2019-12-26 2024-05-31 가부시키가이샤 스크린 홀딩스 기판 처리 장치
JPWO2023136260A1 (https=) * 2022-01-14 2023-07-20

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JP2000286224A (ja) * 1999-03-30 2000-10-13 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2002134458A (ja) * 2000-10-27 2002-05-10 Dainippon Screen Mfg Co Ltd 洗浄液の分離再利用装置および洗浄液の分離再利用方法
JP2003178944A (ja) * 2001-12-10 2003-06-27 Tokyo Electron Ltd 現像処理方法及び現像処理装置
JP2005303151A (ja) * 2004-04-14 2005-10-27 Nec Kagoshima Ltd 有機マスクの形成方法及び該有機マスクを利用したパターン形成方法
US20090004876A1 (en) * 2006-01-31 2009-01-01 Sakae Koyata Method for Etching Single Wafer
JP2011530652A (ja) * 2008-08-07 2011-12-22 プライオグ リミテッド ライアビリティ カンパニー 金属組成物及びその製法
JP2014075575A (ja) * 2012-09-13 2014-04-24 Tokyo Electron Ltd 現像処理装置
JP2015028987A (ja) * 2013-07-30 2015-02-12 東京エレクトロン株式会社 現像処理方法、プログラム、コンピュータ記憶媒体及び現像処理装置

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Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000199953A (ja) * 1999-01-07 2000-07-18 Toshiba Corp パタ―ン形成方法
JP2000286224A (ja) * 1999-03-30 2000-10-13 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2002134458A (ja) * 2000-10-27 2002-05-10 Dainippon Screen Mfg Co Ltd 洗浄液の分離再利用装置および洗浄液の分離再利用方法
JP2003178944A (ja) * 2001-12-10 2003-06-27 Tokyo Electron Ltd 現像処理方法及び現像処理装置
JP2005303151A (ja) * 2004-04-14 2005-10-27 Nec Kagoshima Ltd 有機マスクの形成方法及び該有機マスクを利用したパターン形成方法
US20090004876A1 (en) * 2006-01-31 2009-01-01 Sakae Koyata Method for Etching Single Wafer
JP2011530652A (ja) * 2008-08-07 2011-12-22 プライオグ リミテッド ライアビリティ カンパニー 金属組成物及びその製法
JP2014075575A (ja) * 2012-09-13 2014-04-24 Tokyo Electron Ltd 現像処理装置
JP2015028987A (ja) * 2013-07-30 2015-02-12 東京エレクトロン株式会社 現像処理方法、プログラム、コンピュータ記憶媒体及び現像処理装置

Also Published As

Publication number Publication date
CN107636803A (zh) 2018-01-26
US20190004427A1 (en) 2019-01-03
WO2016208103A1 (ja) 2016-12-29
TWI603379B (zh) 2017-10-21
JP6603487B2 (ja) 2019-11-06
JP2017011095A (ja) 2017-01-12
US10331034B2 (en) 2019-06-25
KR20170137935A (ko) 2017-12-13
TW201712730A (zh) 2017-04-01
KR102103629B1 (ko) 2020-04-22

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