JPWO2023136260A1 - - Google Patents
Info
- Publication number
- JPWO2023136260A1 JPWO2023136260A1 JP2023574046A JP2023574046A JPWO2023136260A1 JP WO2023136260 A1 JPWO2023136260 A1 JP WO2023136260A1 JP 2023574046 A JP2023574046 A JP 2023574046A JP 2023574046 A JP2023574046 A JP 2023574046A JP WO2023136260 A1 JPWO2023136260 A1 JP WO2023136260A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2075—Carboxylic acids-salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/43—Solvents
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/265—Carboxylic acids or salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5009—Organic solvents containing phosphorus, sulfur or silicon, e.g. dimethylsulfoxide
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5022—Organic solvents containing oxygen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
- G03F7/0043—Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
- H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
- H10P76/2041—Photolithographic processes
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Emergency Medicine (AREA)
- Health & Medical Sciences (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Metallurgy (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Materials For Photolithography (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022004064 | 2022-01-14 | ||
| PCT/JP2023/000437 WO2023136260A1 (ja) | 2022-01-14 | 2023-01-11 | 半導体基板の製造方法、レジスト下層膜の形成方法及び洗浄液 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023136260A1 true JPWO2023136260A1 (https=) | 2023-07-20 |
| JPWO2023136260A5 JPWO2023136260A5 (https=) | 2025-10-21 |
Family
ID=87279192
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023574046A Pending JPWO2023136260A1 (https=) | 2022-01-14 | 2023-01-11 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20240369931A1 (https=) |
| JP (1) | JPWO2023136260A1 (https=) |
| KR (1) | KR20240137561A (https=) |
| CN (1) | CN118435121A (https=) |
| TW (1) | TW202331416A (https=) |
| WO (1) | WO2023136260A1 (https=) |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006040956A1 (ja) * | 2004-10-14 | 2006-04-20 | Nissan Chemical Industries, Ltd. | 金属酸化物を含むリソグラフィー用下層膜形成組成物 |
| WO2013012068A1 (ja) * | 2011-07-20 | 2013-01-24 | 日産化学工業株式会社 | チタン及びシリコン含有リソグラフィー用薄膜形成組成物 |
| WO2015053194A1 (ja) * | 2013-10-07 | 2015-04-16 | 日産化学工業株式会社 | ポリ酸を含むメタル含有レジスト下層膜形成組成物 |
| JP2016532739A (ja) * | 2013-06-28 | 2016-10-20 | アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ | 可溶性金属酸化物カルボキシレートのスピンオン組成物及びそれらの使用方法 |
| WO2016208103A1 (ja) * | 2015-06-22 | 2016-12-29 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置および基板処理方法 |
| JP2019532489A (ja) * | 2016-08-12 | 2019-11-07 | インプリア・コーポレイションＩｎｐｒｉａ Ｃｏｒｐｏｒａｔｉｏｎ | 金属含有レジストからのエッジビード領域における金属残留物を低減する方法 |
| JP2020042217A (ja) * | 2018-09-12 | 2020-03-19 | Jsr株式会社 | 組成物、金属又は半金属含有膜形成用組成物、金属又は半金属含有膜及びその製造方法並びにパターン形成方法 |
| JP2020173361A (ja) * | 2019-04-11 | 2020-10-22 | 東京応化工業株式会社 | 洗浄液、及び金属レジストを備えた支持体の洗浄方法 |
| JP2020173359A (ja) * | 2019-04-11 | 2020-10-22 | 東京応化工業株式会社 | 洗浄液、及び金属レジストを備えた支持体の洗浄方法 |
| JP2021532406A (ja) * | 2018-08-06 | 2021-11-25 | ヨンチャン ケミカル カンパニー リミテッドYoung Chang Chemical Co., Ltd | 有機・無機ハイブリッドフォトレジスト工程液組成物 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9070548B2 (en) | 2012-03-06 | 2015-06-30 | Rohm And Haas Electronic Materials Llc | Metal hardmask compositions |
-
2023
- 2023-01-11 JP JP2023574046A patent/JPWO2023136260A1/ja active Pending
- 2023-01-11 WO PCT/JP2023/000437 patent/WO2023136260A1/ja not_active Ceased
- 2023-01-11 CN CN202380015443.5A patent/CN118435121A/zh active Pending
- 2023-01-11 KR KR1020247023031A patent/KR20240137561A/ko active Pending
- 2023-01-13 TW TW112101609A patent/TW202331416A/zh unknown
-
2024
- 2024-07-11 US US18/769,554 patent/US20240369931A1/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006040956A1 (ja) * | 2004-10-14 | 2006-04-20 | Nissan Chemical Industries, Ltd. | 金属酸化物を含むリソグラフィー用下層膜形成組成物 |
| WO2013012068A1 (ja) * | 2011-07-20 | 2013-01-24 | 日産化学工業株式会社 | チタン及びシリコン含有リソグラフィー用薄膜形成組成物 |
| JP2016532739A (ja) * | 2013-06-28 | 2016-10-20 | アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ | 可溶性金属酸化物カルボキシレートのスピンオン組成物及びそれらの使用方法 |
| WO2015053194A1 (ja) * | 2013-10-07 | 2015-04-16 | 日産化学工業株式会社 | ポリ酸を含むメタル含有レジスト下層膜形成組成物 |
| WO2016208103A1 (ja) * | 2015-06-22 | 2016-12-29 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置および基板処理方法 |
| JP2019532489A (ja) * | 2016-08-12 | 2019-11-07 | インプリア・コーポレイションＩｎｐｒｉａ Ｃｏｒｐｏｒａｔｉｏｎ | 金属含有レジストからのエッジビード領域における金属残留物を低減する方法 |
| JP2021532406A (ja) * | 2018-08-06 | 2021-11-25 | ヨンチャン ケミカル カンパニー リミテッドYoung Chang Chemical Co., Ltd | 有機・無機ハイブリッドフォトレジスト工程液組成物 |
| JP2020042217A (ja) * | 2018-09-12 | 2020-03-19 | Jsr株式会社 | 組成物、金属又は半金属含有膜形成用組成物、金属又は半金属含有膜及びその製造方法並びにパターン形成方法 |
| JP2020173361A (ja) * | 2019-04-11 | 2020-10-22 | 東京応化工業株式会社 | 洗浄液、及び金属レジストを備えた支持体の洗浄方法 |
| JP2020173359A (ja) * | 2019-04-11 | 2020-10-22 | 東京応化工業株式会社 | 洗浄液、及び金属レジストを備えた支持体の洗浄方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202331416A (zh) | 2023-08-01 |
| US20240369931A1 (en) | 2024-11-07 |
| KR20240137561A (ko) | 2024-09-20 |
| CN118435121A (zh) | 2024-08-02 |
| WO2023136260A1 (ja) | 2023-07-20 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20250214 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20250430 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20251009 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20260219 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20260417 |