CN107615463B - 半导体装置的制造方法 - Google Patents

半导体装置的制造方法 Download PDF

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CN107615463B
CN107615463B CN201580080357.8A CN201580080357A CN107615463B CN 107615463 B CN107615463 B CN 107615463B CN 201580080357 A CN201580080357 A CN 201580080357A CN 107615463 B CN107615463 B CN 107615463B
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film
solder bonding
metal film
main surface
solder
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CN107615463A (zh
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中田洋辅
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Abstract

具有下述工序：准备半导体基板的工序(S01)，该半导体基板具有第1主面和位于第1主面的相反侧的第2主面；在第1主面之上形成第1电极的工序(S02)；在第1电极之上形成焊料接合用金属膜(第1焊料接合用金属膜)的工序(S03)；在第1焊料接合用金属膜之上形成牺牲膜的工序(S04)；在形成牺牲膜之后对第2主面进行磨削的工序(S06)；在进行磨削的工序(S06)之后进行热处理的工序(在第3主面侧形成元件构造的工序(S07))；在进行热处理的工序(S07)之后将牺牲膜去除的工序(S10)；以及将第1焊料接合用金属膜与第1外部电极进行焊料接合的工序(S12)。

Description

半导体装置的制造方法
技术领域
本发明涉及一种半导体装置的制造方法，特别是涉及半导体元件与外部电极进行了焊料接合的半导体装置的制造方法。
背景技术
已知有形成于半导体元件的电极与外部电极进行了焊料接合的半导体装置(例如参照日本特开2008-182074号公报)。通过利用焊料将半导体元件的电极与外部电极直接接合，从而能够降低电阻，实现可进行大电流通电的配线连接。
另外，已知有一种半导体装置，该半导体装置在进行焊料接合的半导体元件的电极之上形成有用于抑制氧化膜的形成的防氧化膜。日本特开2010-272711号公报中公开了一种半导体器件，该半导体器件在半导体元件的电极之上形成有将导电体层和防氧化层层叠而成的附加电极，其中，该导电体层是作为焊料接合用金属膜而由镍(Ni)构成的，该防氧化层是作为防止该导体层的氧化的膜而由金(Au)或银(Ag)等构成的。
专利文献1：日本特开2008-182074号公报
专利文献2：日本特开2010-272711号公报
发明内容
然而，现有的防氧化膜如上所述由Au、Ag等昂贵的贵金属材料构成，存在半导体装置的制造成本提高这样的问题。
另外，对于功率半导体装置等而言，为了改善通电性能而将半导体基板磨削得薄、在磨削面形成电极。此时，在磨削之前，如果在未受到磨削的面露出有构成焊料接合用金属膜的重金属、或者在焊料接合用金属膜之上形成有由例如重金属材料构成的防氧化膜，则在磨削时，重金属材料附着于露出了半导体基板材料(例如硅(Si))的磨削面，通过经过在磨削后所实施的热扩散等热处理工序而在基板材料中引入重金属材料，对元件中的载流子的寿命造成的影响非常大。因此，在现有的半导体装置的制造方法中，采用了如下方法：在向磨削面形成电极而将磨削面包覆之后、热处理工序之前，在未受到磨削的面之上形成焊料接合用金属膜以及防氧化膜。原子序数小于或等于22且除了碱金属、碱土类金属以外的金属元素，对元件中的载流子的寿命或磨削面的欧姆接触等半导体特性造成影响的可能性低，能够在磨削之前堆积于未受到磨削的面之上。另一方面，原子序数大于或等于26的重金属、碱金属、碱土类金属、或者具有磁性的金属元素，对元件中的载流子的寿命、磨削面的欧姆接触等半导体特性造成影响的可能性高，因此，希望在磨削之前避免堆积于未受到磨削的面之上。
然而，在磨削之后将防氧化膜等形成于未受到磨削的面之上的情况下，有时在输送过程中、成膜过程中等会在半导体基板产生裂纹，产生成品率下降这样的问题。
本发明就是为了解决上述的课题而提出的。本发明的主要目的在于，提供一种半导体装置的制造方法，在该制造方法中，降低了制造成本，并且抑制了半导体基板的裂纹，进而，能够形成即使在晶片磨削之前形成焊料接合用金属膜，也不会对寿命造成影响的半导体元件，并且通过防止焊料接合用金属膜的氧化，从而将焊料接合用金属膜与外部电极良好地进行焊料接合。
本发明涉及的半导体装置的制造方法具有下述工序：准备半导体基板的工序，该半导体基板具有第1主面和位于所述第1主面的相反侧的第2主面；在所述第1主面之上形成第1电极的工序；在所述第1电极之上形成焊料接合用金属膜的工序；在所述焊料接合用金属膜之上形成牺牲膜的工序；在形成所述牺牲膜之后对所述第2主面进行磨削的工序；在所述进行磨削的工序之后进行热处理的工序；在所述进行热处理的工序之后将所述牺牲膜去除的工序；以及将所述焊料接合用金属膜与外部电极进行焊料接合的工序。
发明的效果
根据本发明，能够提供一种半导体装置的制造方法，在该制造方法中，以在焊料接合用金属膜之上形成有牺牲膜的状态进行热处理，因此焊料接合用金属膜的热氧化得到抑制，所以防止了焊料接合用金属膜的氧化，从而使焊料接合用金属膜与外部电极良好地焊料接合。另外，牺牲膜是最终会从半导体装置上去除的膜，牺牲膜本身被热氧化也不存在问题，因此不需要像没有从半导体装置之上去除而被残留下来的防氧化膜那样由贵金属构成。因此，能够提供一种降低了制造成本的半导体装置的制造方法。进而，能够形成即使在晶片磨削之前形成焊料接合用金属膜，也不会对寿命造成影响的半导体元件。另外，能够提供一种半导体装置的制造方法，在该制造方法中，在磨削的工序之后未实施在第1主面之上形成防氧化膜等的工序，因此抑制了在半导体基板产生裂纹这一情况。
附图说明
图1是用于对本实施方式涉及的半导体装置进行说明的剖视图。
图2是本实施方式涉及的半导体装置的制造方法的流程图。
图3是用于对本实施方式涉及的半导体装置的制造方法进行说明的剖视图。
图4是用于对本实施方式涉及的半导体装置的制造方法进行说明的剖视图。
图5是用于对本实施方式涉及的半导体装置的制造方法进行说明的剖视图。
图6是用于对本实施方式涉及的半导体装置的制造方法进行说明的剖视图。
图7是用于对本实施方式涉及的半导体装置的制造方法进行说明的剖视图。
图8是用于对本实施方式涉及的半导体装置的制造方法进行说明的剖视图。
图9是用于对本实施方式涉及的半导体装置的制造方法进行说明的剖视图。
图10是用于对本实施方式涉及的半导体装置的制造方法进行说明的剖视图。
具体实施方式
以下，参照附图对本发明的实施方式进行说明。此外，在以下的附图中，对相同或者相应的部分标注相同的参照标号，省略其说明。
参照图1，对本实施方式涉及的半导体装置100进行说明。半导体装置100具有形成在半导体基板10的半导体元件1。
半导体基板10具有第1主面10A和位于第1主面10A的相反侧的第3主面10C。第3主面10C是通过对半导体基板10的第2主面10B(参照图3～图7)进行局部磨削而形成的磨削面，该第2主面10B位于第1主面10A的相反侧。半导体元件1只要具有任意的元件构造即可，例如既可以作为纵型IGBT(Insulated Gate Bipolar Transistor)或MOSFET(Metal-Oxide-Semiconductor Field-Effect Transistor)构成，也可以作为整流二极管构成。此外，在图1～图10中，省略元件构造的图示。
在第1主面10A之上形成有控制用电极13和成为半导体元件1的主要电流路径的第1电极11。在第1电极11之上形成有第1焊料接合用金属膜21。第1焊料接合用金属膜21经由焊料31与第1外部电极41连接。第1焊料接合用金属膜21与第1外部电极41进行了焊料接合。控制用电极13经由金属线33与第3外部电极43连接。换言之，控制用电极13与第3外部电极43进行了导线键合。
另外，在第1主面10A，以包围第1电极11以及控制用电极13的方式形成有保护环14。换言之，以包围半导体元件1的形成有元件构造的单元区域的方式形成有耐压保持区域。在半导体元件1被作为IGBT构成的情况下，例如第1电极11是作为发射极电极构成的，控制用电极13是作为栅极电极构成的。在第1主面10A之上形成有保护膜15。保护膜15只要在至少形成有保护环14的耐压保持区域之上形成即可，但是也可以在第1主面10A之上形成为在第1电极11以及控制用电极13之上具有开口部。
在第3主面10C之上形成有成为半导体元件1的主要电流路径的第2电极12。在第2电极12之上形成有第2焊料接合用金属膜22。第2焊料接合用金属膜22经由焊料32与第2外部电极42、52连接。第2外部电极42、52是上部电极42和下部电极52层叠、接合而成的。第2焊料接合用金属膜22与上部电极42进行了焊料接合。上部电极42经由焊料34与第4外部电极44连接。
除了第1外部电极41、第2外部电极42、52的下部电极52、第3外部电极43、第4外部电极44中的一部分以外，半导体装置100由封装体60进行了封装。
构成半导体基板10的材料例如为硅。构成第1电极11以及控制用电极13的材料只要为具有导电性的任意材料即可，但优选包含大于或等于95质量％的铝(Al)。构成第2电极12的材料例如包含Al。
焊料31、32、34只要由任意的焊料材料构成即可，主要构成材料为Sn。
构成第1焊料接合用金属膜21以及第2焊料接合用金属膜22的材料例如包含镍(Ni)。即，构成第1焊料接合用金属膜21以及第2焊料接合用金属膜22的材料也可以包含原子序数大于或等于23的金属元素。这样，能够容易地形成作为焊料31的主要构成材料的锡(Sn)和金属间的化合物，能够通过公知的方法容易地进行焊料接合。就第1焊料接合用金属膜21的膜厚而言，能够根据经由焊料31与第1外部电极41接合的接合条件进行任意设定，例如为大于或等于0.5μm而小于或等于5μm，优选为1μm左右。就第2焊料接合用金属膜22的膜厚而言，能够根据经由焊料32与上部电极42接合的接合条件、针对半导体基板10的切割条件等进行任意设定，例如为大于或等于0.5μm而小于或等于5μm，优选为1μm左右。这样，能够在与第1外部电极41或第2外部电极42、52进行焊料接合前后，维持第1焊料接合用金属膜21以及第2焊料接合用金属膜22的机械强度。其结果，能够确保第1焊料接合用金属膜21与第1外部电极41的接合界面的可靠性、以及第2焊料接合用金属膜22与上部电极42的接合界面的可靠性。另外，通过将第1焊料接合用金属膜21以及第2焊料接合用金属膜22的膜厚抑制在上述数值范围内，从而能够容易地形成第1焊料接合用金属膜21以及第2焊料接合用金属膜22。其结果，能够缩短形成第1焊料接合用金属膜21的工序中的处理时间、以及形成第2焊料接合用金属膜22的工序中的处理时间，并且能够抑制制造成品率的下降。
构成保护膜15的材料只要是具有电绝缘性的任意的材料即可，例如包含聚酰亚胺(感光性聚酰亚胺或非感光性聚酰亚胺)。
构成金属线33的材料只要是具有导电性的任意的材料即可，例如包含Al。金属线33例如是作为Al线而构成的。
构成第1外部电极41、第2外部电极42、52、第3外部电极43以及第4外部电极44的材料只要是具有导电性的任意的材料即可，例如包含铜(Cu)。第1外部电极41、第2外部电极42、52、第3外部电极43以及第4外部电极44例如是作为Cu板而构成的。
构成封装体60的材料只要是具有电绝缘性的任意的材料即可，例如为树脂材料，例如在固化前为凝胶状的树脂材料。
参照图2～图10，对本实施方式涉及的半导体装置的制造方法进行说明。
首先，准备半导体基板10(工序(S01))。半导体基板10具有第1主面10A和位于与第1主面10A相反侧的第2主面10B。半导体基板10的膜厚(第1主面10A与第2主面10B的距离)比作为半导体元件1所需的膜厚(半导体装置100的半导体基板10的膜厚)厚，例如为750μm。
然后，在半导体基板10的第1主面10A侧形成半导体元件1的元件构造(未图示)(工序(S02))。具体而言，针对半导体基板10的第1主面10A，例如通过离子注入或热扩散等形成第1主面10A侧的元件构造。在半导体元件1被作为IGBT构成的情况下，本工序(S01)包含形成栅极绝缘膜的工序，由此，在第1主面10A侧形成绝缘栅型场效应晶体管的元件构造。
然后，如图3所示，在半导体基板10的第1主面10A之上形成第1电极11(工序(S03)。第1电极11的成膜方法能够采用任意的方法，例如为溅射法或蒸镀法。另外，对第1电极11进行图案化的方法能够采用任意的方法，例如为掩模溅射法、剥离法。在本工序(S03)中，除了第1电极11以外，还在半导体基板10的第1主面10A之上形成控制用电极13以及保护环14。
然后，如图4所示，在第1电极11之上形成第1焊料接合用金属膜21以及牺牲膜23(工序(S04)。第1焊料接合用金属膜21以及牺牲膜23的成膜方法能够采用任意的方法，例如为溅射法或蒸镀法。图4是表示通过溅射法形成第1焊料接合用金属膜21以及牺牲膜23的方法的剖视图。
如图4(a)所示，准备具有开口部70a的溅射用金属掩模70。金属掩模70的开口部70a形成、配置为，在与第1主面10A交叉的方向(例如垂直的方向)，与第1主面10A之上的第1电极11的中央部分(应该形成第1焊料接合用金属膜21的区域)之上重叠。换言之，金属掩模70形成为在第1主面10A之上，与除了应该形成第1焊料接合用金属膜21的区域以外的区域在上述交叉的方向重叠。
然后，如图4(b)所示，经由金属掩模70对第1焊料接合用金属膜21以及牺牲膜23进行成膜。第1焊料接合用金属膜21以及牺牲膜23通过掩模溅射法进行成膜。由此，如图4(c)所示，在第1电极11之上，仅在与开口部70a重叠的区域之上形成第1焊料接合用金属膜21以及牺牲膜23。
构成牺牲膜23的材料与第1焊料接合用金属膜21相比，只要是能够通过蚀刻选择性地去除的材料即可，优选由原子序数小于或等于22且不包含碱金属、碱土类金属的元素构成，更优选包含钛(Ti)或Al。这样，在后述的将牺牲膜23去除的工序(S10)中，能够一边抑制第1焊料接合用金属膜21的蚀刻，一边容易地去除牺牲膜23。另外，这样，能够在同一工序中连续且容易地形成第1焊料接合用金属膜21和牺牲膜23。
牺牲膜23的膜厚能够根据在本工序(S04)之后所实施的热处理条件、去除牺牲膜23的工序中的蚀刻条件等而进行任意设定，例如大于或等于0.02μm而小于或等于1μm，优选为0.1μm左右。这样，在本工序(S04)之后所实施的热处理工序(例如，在第3主面10C侧形成元件构造的工序中的离子注入或热扩散工序)中，能够防止氧(O2)到达至第1焊料接合用金属膜21，能够防止第1焊料接合用金属膜21所包含的Ni发生热氧化。另外，通过将牺牲膜23的膜厚抑制在上述数值范围内，从而能够容易地形成或去除牺牲膜23，因此能够缩短形成牺牲膜23的工序以及去除牺牲膜23的工序中的处理时间，并且能够抑制制造成品率的下降。
此外，本工序(S04)也可以是通过剥离法形成第1焊料接合用金属膜21以及牺牲膜23。图5是表示通过剥离法形成第1焊料接合用金属膜21以及牺牲膜23的方法的剖视图。
如图5(a)所示，准备具有开口部80a的剥离用掩模80。剥离用掩模80例如为抗蚀膜，通过照相制版形成有开口部80a。开口部80a形成为将第1主面10A之上的第1电极11的中央部分(应该形成第1焊料接合用金属膜21的区域)露出。换言之，剥离用掩模80在第1主面10A之上形成为将除了应该形成第1焊料接合用金属膜21的区域以外的区域覆盖。
然后，如图5(b)所示，隔着剥离用掩模80将第1焊料接合用金属膜21以及牺牲膜23进行成膜。第1焊料接合用金属膜21以及牺牲膜23例如通过溅射法进行成膜。由此，第1焊料接合用金属膜21以及牺牲膜23形成于在剥离用掩模80的开口部80a内露出的第1电极11之上以及剥离用掩模80之上。然后，通过任意的方法将剥离用掩模80去除。由此，在剥离用掩模80之上所形成的第1焊料接合用金属膜21以及牺牲膜23也被从第1主面10A之上去除，如图5(c)所示，仅残留直接形成在第1电极11之上的第1焊料接合用金属膜21以及牺牲膜23。
此外，第1焊料接合用金属膜21和牺牲膜23也可以通过其他工序而形成。例如，在本工序(S04)中，也可以在形成第1焊料接合用金属膜21的工序之后实施形成牺牲膜23的工序。
然后，如图6所示，在第1主面10A之上形成保护膜15(工序(S05))。具体而言，保护膜15在第1主面10A之上形成为，将第1电极11以及第1焊料接合用金属膜21的外周端部、控制用电极13的外周端部和保护环14之上覆盖。在构成保护膜15的材料为感光性聚酰亚胺的情况下，通过照相制版形成保护膜15。另外，在构成保护膜15的材料为非感光性聚酰亚胺的情况下，在将非感光性聚酰亚胺涂敷于第1主面10A之上以后，使用感光性抗蚀剂通过照相制版将蚀刻掩模形成在非感光性聚酰亚胺之上，使用该蚀刻掩模对非感光性聚酰亚胺进行加工，由此形成保护膜15。保护膜15优选不形成在后述的切割工序中被切割的区域之上。
然后，如图7所示，对半导体基板10的背面(第2主面10B)进行磨削(工序(S06))。具体而言，以将从半导体基板10的外周端部算起沿径向处于规定的距离(例如2mm)内的外周区域c残留下来的方式对半导体基板10的第2主面10B进行磨削，形成第3主面10C。这样，在半导体基板10受到磨削的部分的膜厚(第1主面10A与第2主面10B的距离)例如成为100μm。对半导体基板10进行磨削的方法能够采用任意的方法。维持外周区域c的膜厚而仅对由外周区域c包围的内侧区域进行磨削，从而能够抑制在磨削后的半导体基板10发生翘曲等。此外，本工序(S06)是在第1主面10A以及第3主面10C侧以金(Au)等贵金属、以及Ni等重金属未露出的状态进行的。本工序(S06)是在半导体基板10、第1焊料接合用金属膜21、控制用电极13、以及保护膜15露出的状态下进行的，但构成材料中均不包含贵金属以及重金属。因此，在本工序(S06)中，在通过磨削而形成的第2主面10B之上以及第1主面10A之上，防止了包含贵金属或重金属的磨削粉附着于露出了半导体基板10的区域等。
然后，在第3主面10C侧形成半导体元件1的元件构造(未图示)(工序(S07))。在例如半导体元件1被作为IGBT构成的情况下，通过针对第3主面10C的离子注入以及热扩散，形成集电极区域。在本工序(S07)中，半导体基板10被加热至规定的温度。此时，包含贵金属或重金属的磨削粉在第3主面10C以及第1主面10A之上未附着于露出了半导体基板10的区域之上，因此防止了由于本工序(S07)而使贵金属以及重金属热扩散至半导体基板10内。
然后，在半导体基板10的背面(第3主面10C)形成第2电极12(工序(S08))。第2电极12能够通过任意的方法形成，例如通过溅射法形成。此时，半导体基板10在被加热至规定的温度的状态下，将构成第2电极12的材料(例如Al)在第3主面10C之上进行成膜，由此能够降低上述集电极区域与第2电极12的接合界面的电阻。另外，在以不对半导体基板10进行加热的状态将构成第2电极12的材料成膜之后，即使将半导体基板10加热至规定的温度，也能够实现同样的效果。此外，该情况下的针对半导体基板10的热处理工序，也可以在后述的形成第2焊料接合用金属膜22的工序(S09)之后实施。
然后，在第2电极12之上形成第2焊料接合用金属膜22(工序(S09))。形成第2焊料接合用金属膜22的方法能够采用任意的方法，例如为溅射法或蒸镀法等。在本工序(S09)中，优选在第2焊料接合用金属膜22之上形成防氧化膜24。构成防氧化膜24的材料能够设为与第2焊料接合用金属膜22相比难以氧化的任意的材料，优选为Au。防氧化膜24的膜厚能够根据经由焊料32与第2外部电极42、52接合的接合条件进行任意设定，例如为大于或等于0.02μm而小于或等于1μm，优选为0.1μm左右。
这样，通过利用防氧化膜24覆盖第2焊料接合用金属膜22，从而能够防止第2焊料接合用金属膜22的氧化，能够防止第2焊料接合用金属膜22的焊料润湿性的降低。在第2焊料接合用金属膜22的焊料润湿性降低的情况下，有时会产生下述问题，即，在焊料32中产生空隙，在该空隙之上从半导体元件1向第2外部电极42、52的导热受到阻碍而在空隙之上局部发热。与此相对，通过形成有防氧化膜24，从而能够抑制在将第2焊料接合用金属膜22与第2外部电极42、52连接的焊料32中产生空隙，能够在第2焊料接合用金属膜22与上部电极42的整个接合面整体(例如整个第3主面10C)实现良好的导热以及导电。
此外，就半导体装置100而言，在第3主面10C侧经由焊料32进行了焊料接合的区域b(参照图1)的面积比在第1主面10A侧经由焊料31进行了焊料接合的区域a(参照图1)的面积大。因此，焊料32与焊料31相比，针对半导体元件1的冷却的贡献率较大。因此，因为优选在第2焊料接合用金属膜22的整个面之上抑制焊料32中的空隙的产生，所以优选使防氧化膜24形成于第2焊料接合用金属膜22的整个面之上。
这样，如图8所示，第2电极12、第2焊料接合用金属膜22以及防氧化膜24层叠地形成于半导体基板10的第3主面10C之上。此外，第2电极12、第2焊料接合用金属膜22以及防氧化膜24也可以在同一工序中连续地形成。
然后，如图9所示，将牺牲膜23去除(工序(S10))。将牺牲膜23去除的方法能够采用任意的方法，例如为湿式蚀刻法。在构成牺牲膜23的材料为Ti的情况下，本工序(S10)是通过例如将半导体基板10的第1主面10A浸渍于氢氟酸而实施的。另外，在构成牺牲膜23的材料为Al的情况下，本工序(S10)是通过例如将半导体基板10的第1主面10A浸渍于磷酸而实施的。无论是哪种方法，与第1焊料接合用金属膜21相比，都能够通过湿式蚀刻选择性地将牺牲膜23去除。
然后，如图10所示，将半导体基板10进行切割(工序(S11))。由此，从半导体基板10切出半导体元件1。将半导体基板10切割的方法能够采用任意的方法，例如为刀片切割法。
然后，将半导体元件1的第1焊料接合用金属膜21和第1外部电极41进行焊料接合(工序(S12))。例如，在第1焊料接合用金属膜21与第1外部电极41之间配置固相的焊料，在实施热处理之后进行冷却，从而将第1焊料接合用金属膜21和第1外部电极41经由焊料31进行接合。同样地，在第2焊料接合用金属膜22与第2外部电极42、52的上部电极42之间配置固相的焊料，在实施热处理之后进行冷却，从而将第2焊料接合用金属膜22和第2外部电极42、52经由焊料32进行接合。
此时，在去除了牺牲膜23的先前的工序(S10)后，不实施热处理就实施本工序(S12)，因此在本工序(S12)中，不会在第1焊料接合用金属膜21之上形成伴随热处理的氧化膜。但是，在第1焊料接合用金属膜21之上能够形成自然氧化膜，因此也可以作为本工序(S12)的前置处理，在还原性气氛下实施将半导体基板10加热至规定的温度的热处理。这样，能够同时将第1焊料接合用金属膜21以及形成于固相的焊料表面的氧化膜去除，能够恢复第1焊料接合用金属膜21的焊料润湿性。此外，在第2焊料接合用金属膜22之上形成有防氧化膜24，因此没有形成氧化膜。另外，在防氧化膜24的膜厚为0.1μm左右的情况下，防氧化膜24由于在第2焊料接合用金属膜22与第2外部电极42、52的焊料接合时扩散至焊料32内而消失。
然后，将半导体元件1通过封装体60进行封装(工序(S13))。形成封装体60的工序例如为传递模塑法。这样，制造出如图1所示的半导体装置100。
下面，对本实施方式涉及的半导体装置的制造方法的作用效果进行说明。
本实施方式涉及的半导体装置的制造方法具有：准备半导体基板10的工序(S01)，该半导体基板10具有第1主面10A和位于第1主面10A的相反侧的第2主面10B；在第1主面10A之上形成第1电极11的工序(S02)；在第1电极11之上形成第1焊料接合用金属膜21(焊料接合用金属膜)的工序(S03)；在第1焊料接合用金属膜21之上形成牺牲膜23的工序(S04)；在形成牺牲膜23之后对第2主面10B进行磨削的工序(S06)；在磨削的工序(S06)之后进行热处理的工序(在第3主面10C侧形成元件构造的工序(S07))；在进行热处理的工序(S07)之后将牺牲膜23去除的工序(S10)；以及将第1焊料接合用金属膜21和第1外部电极41进行焊料接合的工序(S12)。
这样，在向第1焊料接合用金属膜21之上形成牺牲膜23的工序(S04)之后，实施进行热处理的工序(S07)，在该工序(S07)中，在第1焊料接合用金属膜21之上形成有牺牲膜23。将牺牲膜23去除的工序(S10)是在进行热处理的工序(S07)之后实施的，进一步在其后实施将第1焊料接合用金属膜21与第1外部电极41进行焊料接合的工序(S12)。因此，在进行焊料接合的工序(S12)中，在第1焊料接合用金属膜21之上不形成由热处理产生的热氧化膜，仅形成有自然氧化膜。
因此，作为进行接合的工序(S12)中的焊料接合之前的前置处理，在第1焊料接合用金属膜21之上不会形成由贵金属构成的防氧化膜，而仅进行用于将自然氧化膜去除的简单的前置处理，由此第1焊料接合用金属膜21与第1外部电极41能够经由未产生空隙的焊料31进行良好的焊料接合。
另外，牺牲膜23是最终会从半导体装置100之上去除的膜，牺牲膜23本身也可以由容易氧化的材料构成。即，在第1焊料接合用金属膜21之上，不需要像没有从半导体装置100之上去除而被残留下来的防氧化膜24那样形成由重金属构成的膜，与防氧化膜24相比，通过由低成本材料构成的牺牲膜23，能够抑制第1焊料接合用金属膜21的热氧化。
另外，在本实施方式涉及的半导体装置的制造方法中，在进行磨削的工序(S06)之后，没有实施在第1主面10A之上形成防氧化膜等的工序，因此抑制了在半导体基板10产生裂纹这一情况。
即，就通过本实施方式涉及的半导体装置的制造方法而制造的半导体装置100而言，制造成本得到抑制，并且半导体基板的裂纹得到抑制，且第1焊料接合用金属膜21与第1外部电极41经由焊料31良好地进行热连接以及电连接。
另外，形成第1焊料接合用金属膜21以及牺牲膜23的工序(S03)是在磨削的工序(S07)之前实施的，因此该工序(S03)是针对半导体基板10的膜厚被局部减少之前的具有均匀膜厚的半导体基板10而实施的。因此，在该工序(S03)中，抑制了在半导体基板10产生翘曲等这样的情况，因此通过利用了例如照相制版的剥离法等能够容易地形成第1焊料接合用金属膜21以及牺牲膜23。另外，在通过溅射法形成第1焊料接合用金属膜21以及牺牲膜23的情况下，如果半导体基板10的膜厚局部减小，则半导体基板10的温度局部地急剧上升而产生温度不均，产生半导体基板10的开裂等。但是，在本实施方式涉及的半导体装置的制造方法中，在局部被磨削之前的膜厚均匀的半导体基板10形成第1焊料接合用金属膜21以及牺牲膜23，因此即使使用溅射法也能够抑制在半导体基板10产生裂纹等这样的情况。另外，在该工序(S03)中，即使由于各处理装置内的半导体基板10的输送或半导体基板10的固定等物理接触，也能够抑制在半导体基板10产生裂纹等这样的情况，能够容易地对半导体基板10进行操作。
构成牺牲膜23的材料与第1焊料接合用金属膜21相比，优选是能够通过蚀刻选择性地去除的材料。
这样，在将牺牲膜23去除的工序(S10)中，能够容易地去除牺牲膜23。进而，在该工序(S10)中，第1焊料接合用金属膜21的减薄得到抑制，因此能够在与第1外部电极41进行焊料接合前后维持第1焊料接合用金属膜21的机械强度。其结果，能够确保第1焊料接合用金属膜21与第1外部电极41的接合界面的可靠性。
构成第1焊料接合用金属膜21的材料优选包含Ni。这样，第1焊料接合用金属膜21中的Ni能够与作为焊料31的主要构成材料的Sn容易地形成金属间化合物，因此第1焊料接合用金属膜21与第1外部电极41具有良好的接合状态。另外，这样，能够通过公知的方法容易地将第1焊料接合用金属膜21与第1外部电极41进行焊料接合。
另外，构成牺牲膜23的材料优选包含Ti以及Al中的至少任一者。这样，在后述的将牺牲膜23去除的工序(S10)中，能够一边抑制第1焊料接合用金属膜21的蚀刻，一边容易地去除牺牲膜23。另外，这样，能够在同一工序中连续且容易地形成第1焊料接合用金属膜21和牺牲膜23。由此，能够制造具有以下特性的半导体装置100，即，因为降低了制造成本，且防止了焊料接合用金属膜的氧化，由此使焊料接合用金属膜与外部电极良好地进行了焊料接合。
本实施方式涉及的半导体装置的制造方法优选具有在半导体基板10的第1主面10A之上形成保护膜15的工序(S05)。
这样，在将第1焊料接合用金属膜21和第1外部电极41进行焊料接合的工序(S12)中，即使在产生所谓的焊料飞溅(焊料球的飞散)的情况下，也能够防止飞散的焊料引起半导体装置100的电气特性不良。
在本实施方式涉及的半导体装置的制造方法中，将牺牲膜23去除的工序(S10)优选是在形成保护膜15的工序(S05)之后实施的。
这样，这样，即使在形成保护膜15的工序(S05)中产生了保护膜15的残渣的情况下，也能够通过之后的去除牺牲膜23的工序(S10)中的蚀刻处理将该残渣与牺牲膜23一起去除。
在本实施方式涉及的半导体装置的制造方法中，进行磨削的工序(S06)优选是在形成保护膜15的工序(S05)之后实施的。
这样，形成保护膜15的工序(S05)以及在该工序(S05)之前所实施的各工序(S01～S04)是针对半导体基板10的膜厚被局部地减小之前的具有均匀膜厚的半导体基板10而实施的。因此，在该工序(S05)中，抑制了在半导体基板10产生翘曲等这样的情况，因此能够利用例如照相制版而容易地形成保护膜15。另外，在形成保护膜15的工序(S05)中，能够抑制在半导体基板10产生裂纹等这样的情况，另外，能够容易对半导体基板10进行操作。
构成保护膜15的材料优选包含聚酰亚胺。这样，即使在形成保护膜15的工序(S05)中产生了保护膜15的残渣的情况下，也能够通过之后的去除牺牲膜23的工序(S10)中的使用了氢氟酸或磷酸的蚀刻处理将该残渣与牺牲膜23一起容易地去除。
构成第1电极11的材料包含Al，第1电极11中的Al的含有率优选大于或等于95质量％。这样，第1电极11能够通过公知的方法容易地形成。另外，在金属线33被作为Al线构成的情况下，会实现金属线33与控制用电极13的优异的接合可靠性，因此构成控制用电极13的材料包含Al，控制用电极13中的Al的含有率优选大于或等于95质量％。即使在这种情况下，如果将第1电极11设为上述那样的结构，则也能够在形成第1电极11的工序中，在第1主面10A之上同时形成第1电极11和控制用电极13。
此外，就本实施方式涉及的半导体装置100的制造方法而言，只要在形成了牺牲膜23之后实施进行磨削的工序(S06)，在该工序(S06)之后实施在第3主面10C侧形成元件构造的工序(S07)，在该工序(S07)之后实施将牺牲膜23去除的工序(S10)，且在该工序(S10)之后实施进行焊料接合的工序(S12)，其他工序之间的前后关系则不限定于上述顺序。例如，也可以在形成第1焊料接合用金属膜21之后形成保护膜15，然后形成牺牲膜23。在该情况下，牺牲膜23例如也可以在第1焊料接合用金属膜21以及保护膜15处，形成于与将第1焊料接合用金属膜21露出的开口部相面对的一部分之上。即使如此，也能够实现与本实施方式涉及的半导体装置的制造方法相同的作用效果。
应该认为本次公开的实施方式的全部内容仅是例示，并非是限定性的内容。本发明的范围并不是由上述的说明示出的，而是由权利要求书示出的，意在包含与权利要求书等同的含义及范围内的全部变更。
工业实用性
本发明特别有效地适用于具有使半导体元件与外部电极进行了焊料接合，且受到磨削而使膜厚减小的半导体基板的半导体装置的制造方法。
标号的说明
1半导体元件，10半导体基板，10A第1主面，10B第2主面，10C第3主面，11第1电极，12第2电极，13控制用电极，14保护环，15保护膜，21第1焊料接合用金属膜，22第2焊料接合用金属膜，23牺牲膜，24防氧化膜，31、32、34焊料，33金属线，41第1外部电极，42上部电极(第2外部电极)，52下部电极(第2外部电极)，43第3外部电极，44第4外部电极，60封装体，70金属掩模，70a、80a开口部，80剥离用掩模，100半导体装置。

Claims (10)

1.一种半导体装置的制造方法，其具有下述工序：
准备半导体基板的工序，该半导体基板具有第1主面和位于所述第1主面的相反侧的第2主面；
在所述第1主面之上形成第1电极的工序；
在所述第1电极之上形成焊料接合用金属膜的工序；
在所述焊料接合用金属膜之上形成牺牲膜的工序；
在形成所述牺牲膜之后对所述第2主面进行磨削的工序；
在所述进行磨削的工序之后进行热处理的工序；
在所述进行热处理的工序之后将所述牺牲膜去除的工序；以及
将所述焊料接合用金属膜与外部电极进行焊料接合的工序,
构成所述牺牲膜的材料由满足下述条件的元素构成，即，原子序数小于或等于22且所述牺牲膜不包含碱金属、碱土类金属，
构成所述牺牲膜的材料是与所述焊料接合用金属膜相比能够选择性地去除的材料。
2.根据权利要求1所述的半导体装置的制造方法，其中，
所述选择性地去除是通过蚀刻进行的。
3.根据权利要求1所述的半导体装置的制造方法，其中，
构成所述牺牲膜的材料包含钛以及铝中的至少任一者。
4.根据权利要求1～3中任一项所述的半导体装置的制造方法，其中，
构成所述焊料接合用金属膜的材料包含原子序数大于或等于23的金属元素。
5.根据权利要求4所述的半导体装置的制造方法，其中，
构成所述焊料接合用金属膜的材料包含镍。
6.根据权利要求1～3中任一项所述的半导体装置的制造方法，其中，
具有在所述半导体基板的所述第1主面之上形成保护膜的工序。
7.根据权利要求6所述的半导体装置的制造方法，其中，
将所述牺牲膜去除的工序是在所述形成保护膜的工序之后实施的。
8.根据权利要求6所述的半导体装置的制造方法，其中，
所述进行磨削的工序是在所述形成保护膜的工序之后实施的。
9.根据权利要求6所述的半导体装置的制造方法，其中，
构成所述保护膜的材料包含聚酰亚胺。
10.根据权利要求1～3中任一项所述的半导体装置的制造方法，其中，
构成所述第1电极的材料包含铝，
所述第1电极中的铝的含有率大于或等于95质量％。
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JPWO2016189643A1 (ja) 2018-03-15
WO2016189643A1 (ja) 2016-12-01
WO2016189643A9 (ja) 2017-10-12

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