CN107527791B - 半导体装置的制造方法和半导体制造装置 - Google Patents

半导体装置的制造方法和半导体制造装置 Download PDF

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CN107527791B
CN107527791B CN201710469560.5A CN201710469560A CN107527791B CN 107527791 B CN107527791 B CN 107527791B CN 201710469560 A CN201710469560 A CN 201710469560A CN 107527791 B CN107527791 B CN 107527791B
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gas
roughness
silicon
film
silicon film
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CN107527791A (zh
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冈田充弘
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Tokyo Electron Ltd
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    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H10P50/244—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials comprising alternated and repeated etching and passivation steps
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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CN201710469560.5A 2016-06-20 2017-06-20 半导体装置的制造方法和半导体制造装置 Active CN107527791B (zh)

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JP2016121874A JP6693292B2 (ja) 2016-06-20 2016-06-20 半導体装置の製造方法及び半導体製造装置
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US10510589B2 (en) * 2017-07-12 2019-12-17 Applied Materials, Inc. Cyclic conformal deposition/anneal/etch for Si gapfill
US11056347B2 (en) * 2019-05-28 2021-07-06 Tokyo Electron Limited Method for dry etching compound materials
JP7601503B2 (ja) 2020-12-16 2024-12-17 東京エレクトロン株式会社 半導体装置の製造方法及び基板処理装置
JP7605565B2 (ja) 2021-01-26 2024-12-24 東京エレクトロン株式会社 半導体装置の製造方法及び基板処理装置
JP7304905B2 (ja) * 2021-01-29 2023-07-07 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム
JP2022141425A (ja) * 2021-03-15 2022-09-29 キオクシア株式会社 半導体製造方法および半導体装置
TWI909053B (zh) * 2021-05-31 2025-12-21 日商東京威力科創股份有限公司 基板處理方法及基板處理裝置
JP7626546B2 (ja) 2021-06-01 2025-02-04 東京エレクトロン株式会社 半導体装置の製造方法及び基板処理装置
KR102837958B1 (ko) * 2021-10-27 2025-07-25 도쿄엘렉트론가부시키가이샤 성막 방법 및 성막 시스템
JP2025033278A (ja) 2023-08-29 2025-03-13 東京エレクトロン株式会社 基板処理方法及び基板処理装置

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CN102254807A (zh) * 2010-05-20 2011-11-23 东京毅力科创株式会社 硅膜的形成方法及其形成装置
CN103943474A (zh) * 2013-01-17 2014-07-23 东京毅力科创株式会社 硅膜的形成方法及其形成装置

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KR102199233B1 (ko) 2021-01-06
TW201802295A (zh) 2018-01-16
CN107527791A (zh) 2017-12-29
JP2017228580A (ja) 2017-12-28
JP6693292B2 (ja) 2020-05-13
US20170365465A1 (en) 2017-12-21
TWI710669B (zh) 2020-11-21
US10529559B2 (en) 2020-01-07

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