CN107266696B - 一种片式元器件制程用离型膜的制造方法及其制得的离型膜 - Google Patents

一种片式元器件制程用离型膜的制造方法及其制得的离型膜 Download PDF

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CN107266696B
CN107266696B CN201710437601.2A CN201710437601A CN107266696B CN 107266696 B CN107266696 B CN 107266696B CN 201710437601 A CN201710437601 A CN 201710437601A CN 107266696 B CN107266696 B CN 107266696B
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梁仁调
郭庆超
肖飞
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Zhejiang Jiemei Electronic and Technology Co Ltd
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Abstract

本发明涉及一种片式元器件制程用离型膜的制造方法及其制得的离型膜,制造方法包括步骤:(1)基膜的制备:在基料中加入1000‑1600ppm添加粒子,得到厚度为20‑75μm的基膜,所述添加粒子为二氧化硅、碳酸钙、碳酸镁、碳酸钡、硫酸钡、氧化铝、氧化钛中的一种或多种,所述添加粒子的粒径为500‑1500nm;(2)离型剂的制备;(3)离型膜的制备:在所述基膜上涂布所述离型剂,得到离型膜。所制得的离型膜,表面粗糙度Ra≤0.25μm;离型剂涂层厚度为60‑300nm,离型力为2‑40g/inch;离型膜的残余接着率≥90%,优选96%。

Description

一种片式元器件制程用离型膜的制造方法及其制得的离型膜
技术领域
本发明涉及离型膜制备领域,具体说是一种片式元器件制程用离型膜的制造方法及其制得的离型膜。
背景技术
目前离型膜通常的制造方法是在PET基膜表面涂布一层离型剂(乙烯基有机硅油树脂),并在铂金或锡等络合物催化剂作用下,通过交联固化而得到。
如专利号为CN102582174A公开的一种防静电性能优异的离型膜及其制造方法,所得到离型膜的离型力及残留胶粘率等离型特性良好,而且具有优异的防静电性能。不仅可以用于以保护粘着剂(胶粘剂)层为目的的一般的产业用粘着带(或者胶粘带)等,还可以有效地用于IT领域的产品等。举例来说,可以有效地用于移动电话、LCD、半导体、显示器 等IT领域的产品。
但是这种离型膜,表面平整度差、表面粗糙度大、基膜热变型大及离型剂涂布层的接触角大;离型剂涂布层与基膜之间附着力差,更不能满足高容量、高稳定性且轻、薄、小、单层陶瓷厚度≤3微米的片式元器件制造。
发明内容
本发明的目的之一是提供一种片式元器件制程用离型膜的制造方法,克服现有离型膜存在的上述缺陷。
本发明的目的之二是提供上述方法制得的离型膜,表面平整,表面粗糙度低、离型剂涂层厚度均匀、离型力稳定,满足单层陶瓷厚度≤3微米的片式元器件制程用。
为了实现上述目的,本发明采用如下的技术方案:一种片式元器件制程用离型膜的制造方法,包括步骤:(1)基膜的制备:在基料中加入1000-1600ppm添加粒子,得到厚度为20-75μm的基膜,所述添加粒子为二氧化硅、碳酸钙、碳酸镁、碳酸钡、硫酸钡、氧化铝、氧化钛中的一种或多种,所述添加粒子的粒径为500-1500nm;(2)离型剂的制备:离型剂的原料包括:乙烯基端基有机硅树酯、丁炔醇、硅烷偶联剂、铂金络合物、溶剂;(3)离型膜的制备:在所述基膜上涂布所述离型剂,得到离型膜。
申请人在使用现有的离型基膜生产时,发现所得到的离型膜的表面粗糙度大,而且离型剂涂层厚度均匀性差、离型力稳定性差,满足不了高容量、高稳定性且轻、薄、小、单层陶瓷厚度≤3微米的片式元器件制造。通过对离型膜各组分及其工艺的分析,发现在基膜的制备时,添加粒子的种类、粒子的粒径、粒子的添加量,对基膜表面的粗糙程度影响较大,并且这些因素继而影响离型剂涂层的厚度均匀性、离型力的稳定性以及离型剂与基膜之间的附着力。
本发明的上述技术方案中,选择合适的粒子种类和粒径分部的粒子进行添加,并通过控制添加粒子的添加量,可以有效控制离型膜表面的粗糙度。采用本方案中的离型剂配方,与本方案中的基膜之间附着力以及涂层厚度均匀性和离型力稳定性明显优于现有离型膜,本方案所得到的离型膜能满足高容量、高稳定性且轻、薄、小、单层陶瓷厚度≤3微米的片式元器件制造。
作为优选,所述离型剂的原料包括如下百分比的组分:2-15%的乙烯基端基有机硅树酯、0.01-0.8%的丁炔醇、0.05-0.5%的硅烷偶联剂、0.01-0.8%的铂金络合物、83-97%的溶剂。
作为离型剂中的组分,每种组分的添加量都会对离型膜最终的质量产生影响,但是其中哪种组分会影响离型膜的哪种性能,从现有技术中却不是都能得到启示,申请人发现:
当乙烯基端基有机硅树酯含量<2%时,涂布液粘度过低,涂层容易出现流挂、缩孔等不良现象;当含量>15%时,涂布液粘度过高,涂层出现流平性差、厚度不均、外观彩虹纹等不良。
当丁炔醇含量<0.01%,涂层会固化不完全,影响离型膜性能,如离型力、残余接着率;当含量>0.8%,离型膜离型力稳定性差、存储有效期短。
当硅烷偶联剂含量<0.05%,制得离型膜残余接着率低、存储有效期短;当含量>0.5%,影响离型力稳定性、制造成本变高。
当铂金络合物含量<0.01%,涂层无法固化或固化不完全,影响离型膜性能,如离型力、残余接着率;当含量>0.8%,涂布液的存储有效期过短无法连续生产,制造成本变高。
当溶剂含量<83%,涂布液粘度过高,涂布时涂布层出限流平性差、厚度不均、外观彩虹纹等不良;当含量>97%,涂布液粘度过低,涂层容易出现流挂、缩孔等不良现象。
作为优选,所述离型剂的原料包括如下百分比的组分:2-7%的乙烯基端基有机硅树酯、0.01-0.8%的丁炔醇、0.05-0.5%的硅烷偶联剂、0.01-0.8%的铂金络合物、91-97%的溶剂。
作为优选,步骤(3)中,离型剂涂布后进行烘烤,烘烤温度为60℃-120℃,烘烤时间为10秒-90秒。
申请人还发现,在离型剂涂布后,对其进行烘烤,烘烤的温度和时间,对最终离型膜的离型力稳定性和膜的平坦度影响很大,本方案中选用的烘烤温度和烘烤时间,避免了烘烤引起的基膜热变形、平坦度差的问题。
所述基料中添加粒径为800-1200 nm 、添加量为1000-1200ppm的粒子,所述粒子包括80-95%二氧化硅、1-10%碳酸钡和1-10%氧化钛。
作为优选,所述溶剂为120号溶剂油、丁酮、D30溶剂油、乙酸乙酯、异丙醇的一种或多种。
进一步优选,溶剂为20-30%的120号溶剂油、20-30%的丁酮、
6-15%的D30溶剂油、20-30%的乙酸乙酯、6-15%的异丙醇。
按照上述制造方法所制得的离型膜,表面粗糙度Ra≤0.25μm;离型剂涂层厚度为60-300nm,离型力为2-40g/inch;离型膜的残余接着率≥90%,优选96%。
通过实施上述技术方案,本发明具有如下的优点:
1、向基膜中添加合适粒径大小的合适粒子,并控制粒子的添加量,不仅避免了基膜表面的局部重大凸起问题、改善了膜材产品的表面平整性,降低了表面粗糙度;使得基膜表面形成更多微观上的凹凸感,增加了PET基膜的比表面积,有利于离型剂的涂布,增加离型剂涂层与PET基膜之间的附着力,避免离型剂涂层转移问题,提高离型膜的残余接着率。
2、特制离型剂配方中乙烯基端基有机硅树酯的比例以及离型剂涂层的厚度实现了不同的离型力;制成的离型膜产品外观均匀、光滑、透明、无彩虹纹,其离型剂涂布层厚度为60-300nm,离型力为2-40g/inch,表面接触角低;
3、通过使用特制离型剂,实现60-120℃低温烘烤热固化,避免烘烤时高温引起PET基膜热变形、平坦度差的问题。
具体实施方式
下面通过具体的实施例,对本发明作进一步详细说明。
实施例1:
一种片式元器件制程用离型膜的制造方法,包括:
1.PET基膜制备:
在PET切片中加入1600ppm粒径为500~800nm的添加粒子,添加粒子可选择为二氧化硅、碳酸钙、碳酸镁、碳酸钡、硫酸钡、氧化铝、氧化钛等粉末颗粒的一种或多种,本实施例采用碳酸镁,混合均匀后经过高温熔融、螺杆混合、挤出流延、拉伸(横拉及纵拉)、分条及收卷得到厚度为75μm基膜;
2.离型剂制备:
将离型剂各组分按照下列百分比混合:乙烯基端基有机硅树酯15%、丁炔醇0.8%、硅烷偶联剂0.05%、铂金络合物0.15%、溶剂84%,搅拌均匀,备用。其中,溶剂可以是120号溶剂油、丁酮、D30溶剂油、乙酸乙酯、异丙醇的一种或多种,本实施例采用乙酸乙酯。
3.涂布离型剂:
在步骤1的PET基膜一面上采用刮刀式涂布方式涂布上步骤2配制的离型剂;涂布后烘烤温度度为80-120℃,烘烤时间为10秒,得到离型膜,产品外观均匀、光滑、透明、无彩虹纹,离型剂涂层厚度为200-300nm,得到离型膜的离型力为2-15g/inch,表面粗糙度Ra≤0.2μm,离型膜残余接着率≥90%。
实施例2:
一种片式元器件制程用离型膜的制造方法,包括如下步骤:
1.在PET切片中加入1000ppm粒径为1000~1500nm的添加粒子,添加粒子可选择为二氧化硅、碳酸钡、氧化钛的混合物,混合百分比为:二氧化硅80%、碳酸钡10%、氧化钛10%,混合均匀后经过熔融、螺杆混合、挤出流延、拉伸(横拉及纵拉)、分条及收卷得到厚度为50μm的离型膜基膜;
2.将离型剂各组分按照下列百分比混合:乙烯基端基有机硅树酯8%、丁炔醇0.5%、硅烷偶联剂0.05%、铂金络合物0.25%、溶剂91.2%,搅拌均匀,备用。其中,溶剂可以是120号溶剂油、丁酮、D30溶剂油、乙酸乙酯、异丙醇的一种或多种,本实施例采用120号溶剂油、丁酮等体积混合的混合溶剂。
3.在步骤1的PET基膜一面上采用凹版涂布方式涂布上步骤2配制的离型剂;涂布后烘烤温度度为60~90℃,烘烤时间为30秒,得到离型膜,产品外观均匀、光滑、透明、无彩虹纹,离型剂涂层厚度为100-250nm,所得到离型剂的离型力为5-20g/inch,表面粗糙度Ra≤0.15μm,离型膜残余接着率≥92%。
实施例3:
一种片式元器件制程用离型膜的制造方法,包括如下步骤:
1.在PET切片中加入1200ppm粒径为800~1200nm的添加粒子,添加粒子可选择为二氧化硅、碳酸钡、氧化钛的混合物,混合百分比为:二氧化硅95%、碳酸钡1%、氧化钛4%,混合均匀后经过熔融、螺杆混合、挤出流延、拉伸(横拉及纵拉)、分条及收卷得到厚度为25μm的离型膜基膜;
2.将离型剂各组分按照下列百分比混合:乙烯基端基有机硅树酯2%、丁炔醇0.1%、硅烷偶联剂0.5%、铂金络合物0.4%、溶剂97%,搅拌均匀,备用。其中,溶剂本实施例采用混合溶剂:30%的120号溶剂油、22%的丁酮、15%的D30溶剂油、27%的乙酸乙酯、6%的异丙醇。
3.在步骤1的PET基膜一面上采用三辊涂布方式涂布上步骤2配制的离型剂;涂布后烘烤温度度为70~100℃,烘烤时间为15秒,得到离型膜,产品外观均匀、光滑、透明、无彩虹纹,离型剂涂层厚度为60-200nm,离型力为15-40g/inch,表面粗糙度Ra≤0.25μm,离型膜残余接着率≥96%。
实施例4:
一种片式元器件制程用离型膜的制造方法,包括如下步骤:
1.在PET切片中加入1200ppm粒径为800~1000nm的添加粒子,添加粒子可选择为二氧化硅、碳酸钡、氧化钛的混合物,混合百分比为:二氧化硅94%、碳酸钡5%、氧化钛1%,混合均匀后经过熔融、螺杆混合、挤出流延、拉伸(横拉及纵拉)、分条及收卷得到厚度为30μm的离型膜基膜;
2.将离型剂各组分按照下列百分比混合:乙烯基端基有机硅树酯4%、丁炔醇0.2%、硅烷偶联剂0.1%、铂金络合物0.2%、溶剂95.5%,搅拌均匀,备用。其中,溶剂本实施例采用混合溶剂:25%的120号溶剂油、25%的丁酮、15%的D30溶剂油、29%的乙酸乙酯、6%的异丙醇。
3.在步骤1的PET基膜一面上采用五辊涂布方式涂布上步骤2配制的离型剂;涂布后烘烤温度度为60-100℃,烘烤时间为90秒,得到离型膜,产品外观均匀、光滑、透明、无彩虹纹,离型剂涂层厚度为100-180nm,离型力为10-25g/inch,表面粗糙度Ra≤0.20μm,离型膜残余接着率≥94%。
对比例1:
与实施例1的不同在于,所选用的离型剂不同,离型剂选用乙烯基有机硅油树脂及Sn催化固化体系。
对比例2:
与实施例2的不同在于,在基膜中不添加粒子,溶剂采用甲苯。
对比例3:
与实施例2的不同在于,添加粒子的粒径为1600-4500nm,添加量为800-900ppm,溶剂采用庚烷。
对比例4:
与实施例3的不同在于,离型剂各组分按照下列百分比混合:乙烯基端基有机硅树酯20%、丁炔醇2%、硅烷偶联剂3%、铂金络合物5%、120号溶剂油70%。
对比例5:
与实施例3的不同在于,溶剂为 10%的120号溶剂油、10%的丁酮、20%的D30溶剂油、30%的乙酸乙酯、30%的异丙醇。
对各实施例和对比例所得到的离型膜,进行产品外观、表面粗糙度、离型力、残余接着率进行测定:
测定方法:
1、表面粗糙度Ra测试方法:
①取平整无褶皱样张膜,并且标注好纵横向,取样时尽量保持样张膜的平整洁净;
②切取4cm*4cm小样块,纵横向各取6块;
③使用粗糙度测试仪,并且保持载样平台的洁净平整,分别对纵横向样块进行粗糙度测试,并记录其Ra、Rz、Rmax值;
④计算数据中平均值作为所取样品表面粗糙度数值表征。
2、离型力测试方法:
①将宽1inch、长200mm的TESA7475胶带贴于被测离型膜的涂布面(注意:要一边贴全一边碾压,避免贴胶带时离型膜之间有气泡);
②贴好胶带后静置在温湿度分别控制在25±3℃及50±10%条件下20小时;
③将胶带安装上夹具,用拉力机以180度角拉伸胶带,拉力机电脑显示的数据即为试片的离型力(g/in),取5个数值的平均值为测试结果。
3、残余接着率测试方法:
①将宽度为1 inch、长200mm的TESA7475胶带按标准方法贴于被测试离型膜与标准钢板上;
②用拉力机以拉伸速度为300mm /min,拉伸角度为180度剥离标准钢板上的胶带拉力值记为A;
③将被贴离型膜的胶带用20g/ 的标准不锈钢板在70℃的烘箱内压20小时,取出后在室温条件下自然冷却;将胶带从离型膜上剥下后再按标准方法贴于标准钢板上,以拉伸速度为300mm /min,拉伸角度为180度的拉力机剥离胶带,拉力值记为B;
④残余接着率=(B/A)*100%
测定结果见表1:
表1
Figure DEST_PATH_IMAGE002
备注:各数值为平均值
从表1看,对比例1、3、4所得到离型膜的表面粗糙度Ra大于实施例,对比例2、5中由于没有添加粒子或添加粒子与实施例相同,表面粗糙度Ra值接近实施例;而粒子的添加影响离型膜基膜的比表面积,从而影响离型膜离型力的稳定性和残余接着率,实施例所得到的离型膜离型力的稳定性高于对比例所得到的离型膜;而残余接着率作为离型膜的重要质量指标,本发明实施例所得到的离型膜的残余接着率明显优于对比例的残余接着率。

Claims (7)

1.一种片式元器件制程用离型膜的制造方法,其特征在于,包括步骤:(1)基膜的制备:在基料中加入1000-1600ppm添加粒子,得到厚度为20-75μm的基膜,所述添加粒子为二氧化硅、碳酸钙、碳酸镁、碳酸钡、硫酸钡、氧化铝、氧化钛中的一种或多种,所述添加粒子的粒径为500-1500nm;(2)离型剂的制备:离型剂的原料包括:乙烯基端基有机硅树酯、丁炔醇、硅烷偶联剂、铂金络合物、溶剂;(3)离型膜的制备:在所述基膜上涂布所述离型剂,得到离型膜;离型剂的原料包括如下百分比的组分:2-15%的乙烯基端基有机硅树酯、0.01-0.8%的丁炔醇、0.05-0.5%的硅烷偶联剂、0.01-0.8%的铂金络合物、83-97%的溶剂;其中,溶剂为20-30%的120号溶剂油、20-30%的丁酮、6-15%的D30溶剂油、20-30%的乙酸乙酯、6-15%的异丙醇。
2.根据权利要求1所述一种片式元器件制程用离型膜的制造方法,其特征在于,步骤(3)中,离型剂涂布后进行烘烤,烘烤温度为60℃-120℃,烘烤时间为10秒-90秒。
3.根据权利要求1所述一种片式元器件制程用离型膜的制造方法,其特征在于,离型剂的原料包括如下百分比的组分:2-7%的乙烯基端基有机硅树酯、0.01-0.8%的丁炔醇、0.05-0.5%的硅烷偶联剂、0.01-0.8%的铂金络合物、91-97%的溶剂。
4.根据权利要求1所述一种片式元器件制程用离型膜的制造方法,其特征在于,所述基料中添加粒径为800-1200 nm 、添加量为1000-1200ppm的粒子,所述粒子包括80-95%二氧化硅、1-10%碳酸钡和1-10%氧化钛。
5.采用权利要求1所述制造方法所制得的离型膜,其特征在于,离型膜的表面粗糙度Ra≤0.25μm。
6.根据权利要求5所述的离型膜,其特征在于,离型剂涂层厚度为60-300nm,离型力为2-40g/inch。
7.根据权利要求5所述的离型膜,其特征在于,离型膜的残余接着率≥90%。
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