CN107046003B - 低温多晶硅tft基板及其制作方法 - Google Patents

低温多晶硅tft基板及其制作方法 Download PDF

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CN107046003B
CN107046003B CN201710412498.6A CN201710412498A CN107046003B CN 107046003 B CN107046003 B CN 107046003B CN 201710412498 A CN201710412498 A CN 201710412498A CN 107046003 B CN107046003 B CN 107046003B
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layer
grid
doped region
ion
low temperature
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CN107046003A (zh
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王涛
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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Priority to CN201710412498.6A priority Critical patent/CN107046003B/zh
Priority to US15/735,614 priority patent/US10355138B2/en
Priority to PCT/CN2017/089620 priority patent/WO2018218712A1/fr
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133357—Planarisation layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G02F1/13685—Top gates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/104—Materials and properties semiconductor poly-Si

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  • General Physics & Mathematics (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Thin Film Transistor (AREA)
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CN108010909B (zh) * 2017-11-21 2020-06-30 武汉华星光电技术有限公司 阵列基板及oled显示装置
CN108183125B (zh) * 2017-12-28 2020-12-29 武汉华星光电半导体显示技术有限公司 有机发光二极管显示面板
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1612358A (zh) * 2003-10-28 2005-05-04 统宝光电股份有限公司 薄膜晶体管及其制作方法
CN105470195A (zh) * 2016-01-04 2016-04-06 武汉华星光电技术有限公司 Tft基板的制作方法
CN105514119A (zh) * 2016-01-04 2016-04-20 武汉华星光电技术有限公司 Tft基板的制作方法及tft基板

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6511870B2 (en) * 2001-05-08 2003-01-28 Industrial Technology Research Institute Self-aligned LDD poly-Si thin-film transistor
TW554538B (en) * 2002-05-29 2003-09-21 Toppoly Optoelectronics Corp TFT planar display panel structure and process for producing same
CN102683354B (zh) * 2012-03-22 2014-12-17 京东方科技集团股份有限公司 顶栅型n-tft、阵列基板及其制备方法和显示装置
CN103985637B (zh) * 2014-04-30 2017-02-01 京东方科技集团股份有限公司 低温多晶硅薄膜晶体管及其制作方法和显示装置
CN105070724A (zh) * 2015-07-16 2015-11-18 深圳市华星光电技术有限公司 Tft基板的制作方法及制得的tft基板
CN105655391B (zh) * 2016-01-28 2018-10-26 武汉华星光电技术有限公司 Tft阵列基板及其制作方法
CN105552027B (zh) * 2016-02-14 2018-08-14 武汉华星光电技术有限公司 阵列基板的制作方法及阵列基板
CN105742240B (zh) * 2016-04-05 2019-09-13 武汉华星光电技术有限公司 一种ltps阵列基板的制造方法
CN106252234A (zh) * 2016-08-26 2016-12-21 武汉华星光电技术有限公司 Nmos晶体管及其制作方法、cmos晶体管
CN106531692A (zh) * 2016-12-01 2017-03-22 京东方科技集团股份有限公司 阵列基板的制备方法、阵列基板及显示装置
CN106783734B (zh) * 2016-12-27 2019-11-26 武汉华星光电技术有限公司 一种低温多晶硅阵列基板及其制作方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1612358A (zh) * 2003-10-28 2005-05-04 统宝光电股份有限公司 薄膜晶体管及其制作方法
CN105470195A (zh) * 2016-01-04 2016-04-06 武汉华星光电技术有限公司 Tft基板的制作方法
CN105514119A (zh) * 2016-01-04 2016-04-20 武汉华星光电技术有限公司 Tft基板的制作方法及tft基板

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