JP5564464B2 - Tft−lcdアレー基板及びその製造方法 - Google Patents
Tft−lcdアレー基板及びその製造方法 Download PDFInfo
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- 229910052721 tungsten Inorganic materials 0.000 description 9
- 229910045601 alloy Inorganic materials 0.000 description 8
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- 239000007921 spray Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/13625—Patterning using multi-mask exposure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
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- Nonlinear Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Ceramic Engineering (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
- Electrodes Of Semiconductors (AREA)
Description
図3は本発明の第1の実施形態にかかるTFT−LCDアレー基板の製造方法のプローチャートである。具体的に、下記の工程を含む。
図10には本発明の第2の実施形態にかかるTFT−LCDアレー基板の製造方法のプローチャートが示され、具体的に下記工程を含む。
2 ゲートライン及びゲート電極
3 ゲート絶縁層
4 半導体層
5 画素電極
6 ソース・ドレイン電極(データライン)
7 パッシベーション層
9 高温フォトレジスト
10 Mo(W又はCr又はその合金)層
15 オーム接触層
17 隔離絶縁媒体層
Claims (5)
- 基板に、ゲート金属層、ゲート絶縁媒体層及び半導体層が順次堆積され、グレートンマスクでマスキング及びエッチングを行うことにより、ゲートライン、前記ゲートラインに接続するゲート電極、ゲート絶縁層及び薄膜トランジスタの半導体層部分が形成され、エッチングされた後の前記ゲート絶縁層及び半導体層は側方において下方の前記ゲート電極を露出することで段差部を形成する第1の工程と、
前記第1の工程が完了して得られた基板に、前記ゲート電極、ゲート絶縁層及び半導体層を覆うように隔離絶縁媒体層が堆積され、前記隔離絶縁媒体層に対してマスキング及びエッチングを行うことにより、半導体層の上方に位置する隔離絶縁媒体層の両側にビアーホールが形成される第2の工程と、
プラズマ化学気相蒸着室に所定の比率でPH 3 及びH 2 が導入され、プラズマ状態にあるPH 3 及びH 2 とビアーホール部分のa−Siとの界面反応を起こさせ、反応条件を制御することで、微結晶シリコン層が形成されることにより、前記第2の工程が完了して得られたビアーホールに、オーム接触層が形成される第3の工程と、
前記第3の工程が完了して得られた基板に、透明画素電極層、ソース・ドレイン電極金属層が堆積され、グレートンマスクでマスキング及びエッチングを行うことにより、透明画素電極、ソース電極、ドレイン電極及び前記ドレイン電極に一体接続するデータラインが形成される第4の工程と、
を含むTFT−LCDアレー基板の製造方法。 - 前記第1の工程においてグレートンマスクでマスキングを行うとき、前記グレートンマスクの不透光部分が、前記基板の半導体層が形成される部分に対応し、前記グレートンマスクの半透光部分が、前記基板のゲートライン及びゲート電極が形成される部分に対応し、前記グレートンマスクの完全透光部分が、前記基板の残った部分に対応することを特徴とする請求項1に記載の製造方法。
- 前記第4の工程においてグレートンマスクでマスキングを行うとき、前記グレートンマスクの不透光部分が、前記基板のソース電極、ドレイン電極及びデータラインが形成される部分に対応し、前記グレートンマスクの半透光部分が、前記基板の透明画素電極が形成される部分に対応し、前記グレートンマスクの完全透光部分が、前記基板の残った部分に対応することを特徴とする請求項1に記載の製造方法。
- 前記第4の工程においてグレートンマスクでマスキングを行うとき、前記グレートンマスクの不透光部分が、前記基板のソース電極、ドレイン電極及びデータラインが形成される部分に対応し、前記グレートンマスクの半透光部分が、前記基板の透明画素電極が形成される部分に対応し、前記グレートンマスクの完全透光部分が、前記基板の残った部分に対応することを特徴とする請求項2に記載の製造方法。
- 前記第4の工程において、スパッター法で同一又は異なる装置で連続的に堆積することにより、透明画素電極層及びソース・トレイン電極金属層が堆積されることを特徴とする請求項1乃至3のいずれかに記載の製造方法。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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CN 200610074457 CN100544004C (zh) | 2006-04-21 | 2006-04-21 | 一种tft lcd阵列基板及其制造方法 |
CN200610074457.2 | 2006-04-21 | ||
CN200610080641.8 | 2006-05-23 | ||
CNB2006100806418A CN100489631C (zh) | 2006-05-23 | 2006-05-23 | 一种tft lcd阵列基板结构及其制造方法 |
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JP2007113400A Division JP2007294970A (ja) | 2006-04-21 | 2007-04-23 | Tft−lcdアレー基板及びその製造方法 |
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JP2011155303A JP2011155303A (ja) | 2011-08-11 |
JP5564464B2 true JP5564464B2 (ja) | 2014-07-30 |
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JP2011103041A Expired - Fee Related JP5564464B2 (ja) | 2006-04-21 | 2011-05-02 | Tft−lcdアレー基板及びその製造方法 |
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US (4) | US7952099B2 (ja) |
JP (2) | JP2007294970A (ja) |
KR (1) | KR100898694B1 (ja) |
Families Citing this family (38)
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CN100483232C (zh) | 2006-05-23 | 2009-04-29 | 北京京东方光电科技有限公司 | 一种tft lcd阵列基板结构及其制造方法 |
KR100846974B1 (ko) | 2006-06-23 | 2008-07-17 | 베이징 보에 옵토일렉트로닉스 테크놀로지 컴퍼니 리미티드 | Tft lcd 어레이 기판 및 그 제조 방법 |
JP4740203B2 (ja) | 2006-08-04 | 2011-08-03 | 北京京東方光電科技有限公司 | 薄膜トランジスタlcd画素ユニットおよびその製造方法 |
JP4823989B2 (ja) | 2006-09-11 | 2011-11-24 | 北京京東方光電科技有限公司 | Tft―lcdアレイ基板及びその製造方法 |
CN100461432C (zh) | 2006-11-03 | 2009-02-11 | 北京京东方光电科技有限公司 | 一种薄膜晶体管沟道结构 |
CN100423082C (zh) | 2006-11-03 | 2008-10-01 | 北京京东方光电科技有限公司 | 一种平板显示器系统内接口单元 |
KR100917654B1 (ko) | 2006-11-10 | 2009-09-17 | 베이징 보에 옵토일렉트로닉스 테크놀로지 컴퍼니 리미티드 | 박막트랜지스터 액정 디스플레이 화소 구조 및 그 제조방법 |
CN100442132C (zh) | 2006-11-17 | 2008-12-10 | 北京京东方光电科技有限公司 | 一种tft lcd阵列基板结构及其制造方法 |
CN100462795C (zh) | 2006-11-29 | 2009-02-18 | 北京京东方光电科技有限公司 | 取向液和隔垫物的制备方法 |
CN100432770C (zh) * | 2006-11-29 | 2008-11-12 | 北京京东方光电科技有限公司 | 一种液晶显示器装置 |
US9052550B2 (en) | 2006-11-29 | 2015-06-09 | Beijing Boe Optoelectronics Technology Co., Ltd | Thin film transistor liquid crystal display |
CN1996133A (zh) | 2006-12-13 | 2007-07-11 | 京东方科技集团股份有限公司 | 一种薄膜晶体管液晶显示器及其制造方法 |
CN100524781C (zh) | 2006-12-13 | 2009-08-05 | 北京京东方光电科技有限公司 | 一种薄膜晶体管液晶显示器像素结构及其制造方法 |
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US8354305B2 (en) | 2013-01-15 |
US8642404B2 (en) | 2014-02-04 |
JP2007294970A (ja) | 2007-11-08 |
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US20070246707A1 (en) | 2007-10-25 |
KR20070104296A (ko) | 2007-10-25 |
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