CN107003168B - 液面计以及液体原料气化供给装置 - Google Patents

液面计以及液体原料气化供给装置 Download PDF

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Publication number
CN107003168B
CN107003168B CN201580044670.6A CN201580044670A CN107003168B CN 107003168 B CN107003168 B CN 107003168B CN 201580044670 A CN201580044670 A CN 201580044670A CN 107003168 B CN107003168 B CN 107003168B
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China
Prior art keywords
cavity
temperature measuring
liquid
liquid level
side wall
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Expired - Fee Related
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CN201580044670.6A
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English (en)
Chinese (zh)
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CN107003168A (zh
Inventor
日高敦志
永濑正明
平田薰
山下哲
平尾圭志
西野功二
池田信一
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Fujikin Inc
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Fujikin Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J4/00—Feed or outlet devices; Feed or outlet control devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F23/00—Indicating or measuring liquid level or level of fluent solid material, e.g. indicating in terms of volume or indicating by means of an alarm
    • G01F23/22—Indicating or measuring liquid level or level of fluent solid material, e.g. indicating in terms of volume or indicating by means of an alarm by measuring physical variables, other than linear dimensions, pressure or weight, dependent on the level to be measured, e.g. by difference of heat transfer of steam or water
    • G01F23/24—Indicating or measuring liquid level or level of fluent solid material, e.g. indicating in terms of volume or indicating by means of an alarm by measuring physical variables, other than linear dimensions, pressure or weight, dependent on the level to be measured, e.g. by difference of heat transfer of steam or water by measuring variations of resistance of resistors due to contact with conductor fluid
    • G01F23/246—Indicating or measuring liquid level or level of fluent solid material, e.g. indicating in terms of volume or indicating by means of an alarm by measuring physical variables, other than linear dimensions, pressure or weight, dependent on the level to be measured, e.g. by difference of heat transfer of steam or water by measuring variations of resistance of resistors due to contact with conductor fluid thermal devices
    • G01F23/247—Indicating or measuring liquid level or level of fluent solid material, e.g. indicating in terms of volume or indicating by means of an alarm by measuring physical variables, other than linear dimensions, pressure or weight, dependent on the level to be measured, e.g. by difference of heat transfer of steam or water by measuring variations of resistance of resistors due to contact with conductor fluid thermal devices for discrete levels
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F23/00—Indicating or measuring liquid level or level of fluent solid material, e.g. indicating in terms of volume or indicating by means of an alarm
    • G01F23/22—Indicating or measuring liquid level or level of fluent solid material, e.g. indicating in terms of volume or indicating by means of an alarm by measuring physical variables, other than linear dimensions, pressure or weight, dependent on the level to be measured, e.g. by difference of heat transfer of steam or water
    • G01F23/26—Indicating or measuring liquid level or level of fluent solid material, e.g. indicating in terms of volume or indicating by means of an alarm by measuring physical variables, other than linear dimensions, pressure or weight, dependent on the level to be measured, e.g. by difference of heat transfer of steam or water by measuring variations of capacity or inductance of capacitors or inductors arising from the presence of liquid or fluent solid material in the electric or electromagnetic fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F23/00—Indicating or measuring liquid level or level of fluent solid material, e.g. indicating in terms of volume or indicating by means of an alarm
    • G01F23/22—Indicating or measuring liquid level or level of fluent solid material, e.g. indicating in terms of volume or indicating by means of an alarm by measuring physical variables, other than linear dimensions, pressure or weight, dependent on the level to be measured, e.g. by difference of heat transfer of steam or water

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Thermal Sciences (AREA)
  • Fluid Mechanics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Chemical Vapour Deposition (AREA)
  • Measurement Of Levels Of Liquids Or Fluent Solid Materials (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
  • Filling Or Discharging Of Gas Storage Vessels (AREA)
CN201580044670.6A 2014-11-13 2015-11-02 液面计以及液体原料气化供给装置 Expired - Fee Related CN107003168B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014231119A JP6212467B2 (ja) 2014-11-13 2014-11-13 液面計及び液体原料気化供給装置
JP2014-231119 2014-11-13
PCT/JP2015/005498 WO2016075892A1 (ja) 2014-11-13 2015-11-02 液面計及び液体原料気化供給装置

Publications (2)

Publication Number Publication Date
CN107003168A CN107003168A (zh) 2017-08-01
CN107003168B true CN107003168B (zh) 2019-12-20

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CN201580044670.6A Expired - Fee Related CN107003168B (zh) 2014-11-13 2015-11-02 液面计以及液体原料气化供给装置

Country Status (6)

Country Link
US (1) US10604840B2 (enExample)
JP (1) JP6212467B2 (enExample)
KR (1) KR101930303B1 (enExample)
CN (1) CN107003168B (enExample)
TW (1) TWI592639B (enExample)
WO (1) WO2016075892A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6212467B2 (ja) * 2014-11-13 2017-10-11 株式会社フジキン 液面計及び液体原料気化供給装置
JP6704809B2 (ja) * 2016-07-05 2020-06-03 東京エレクトロン株式会社 基板処理装置、基板処理方法および記憶媒体
WO2018123854A1 (ja) * 2016-12-27 2018-07-05 株式会社フジキン 液面計、それを備えた気化器、及び液面検知方法
JP7137921B2 (ja) * 2017-11-07 2022-09-15 株式会社堀場エステック 気化システム及び気化システム用プログラム
CN109489764A (zh) * 2018-12-18 2019-03-19 中国矿业大学(北京) 一种实验室规模气体体积自动计量装置及方法
EP4147535B1 (en) * 2020-05-07 2025-12-10 Juul Labs, Inc. Vaporizer device with variable booster circuit
CN112843756A (zh) * 2020-12-29 2021-05-28 东华理工大学 液体蒸发气体发生器及其控制方法
KR102347205B1 (ko) * 2021-02-26 2022-01-06 (주)지오엘리먼트 전구체의 레벨 측정 기능을 구비한 기화기 시스템
JP7606491B2 (ja) * 2022-07-07 2024-12-25 大陽日酸株式会社 固体材料容器、固体材料供給装置、及び固体材料供給方法
CN119984451B (zh) * 2025-04-16 2025-06-20 四川省机场集团有限公司成都天府国际机场分公司 一种带有报警功能的水位监测装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3009809B2 (ja) * 1993-08-26 2000-02-14 株式会社鷺宮製作所 半導体加工用液体原料収容容器における液面検出装置
CN1247974A (zh) * 1998-09-17 2000-03-22 武藏野机器株式会社 气压式液面计
CN1465741A (zh) * 2002-06-03 2004-01-07 �ձ�AERA��ʽ���� 液体材料汽化及供给装置
CN101430044A (zh) * 2007-08-23 2009-05-13 乔治洛德方法研究和开发液化空气有限公司 一种液化气气化方法、气化装置和一种使用该气化方法和装置的液化气供应装置
JP4405315B2 (ja) * 2004-05-28 2010-01-27 シャープ株式会社 蒸気調理器
US20120017675A1 (en) * 2010-07-23 2012-01-26 Rosemount Aerospace Inc. Systems and Methods for Liquid Level Sensing Having a Differentiating Output

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3181557A (en) * 1962-11-02 1965-05-04 Jr James E Lannan Liquid interface sensor
US3905243A (en) * 1973-09-11 1975-09-16 Us Energy Liquid-level sensing device
US3983751A (en) * 1974-07-17 1976-10-05 Atlantic Richfield Company Method of measuring the level of elevated temperature particulate material
JPS6446716U (enExample) * 1987-09-17 1989-03-22
JPS6446717U (enExample) * 1987-09-17 1989-03-22
JPH039809A (ja) 1989-06-06 1991-01-17 Daietsu:Kk 水分計測方法
JPH0651834U (ja) * 1992-12-18 1994-07-15 ティーディーケイ株式会社 液面及び異常過熱検出装置
JP3009809U (ja) * 1994-10-03 1995-04-11 タックメディカル株式会社 趾間部保護シート
JP3869169B2 (ja) 1999-09-29 2007-01-17 株式会社鷺宮製作所 液面検出装置
JP5461786B2 (ja) * 2008-04-01 2014-04-02 株式会社フジキン 気化器を備えたガス供給装置
JP5350824B2 (ja) 2009-02-03 2013-11-27 株式会社フジキン 液体材料の気化供給システム
JP5400816B2 (ja) 2011-01-31 2014-01-29 株式会社トリケミカル研究所 液面レベルセンサー
JP5913888B2 (ja) 2011-09-30 2016-04-27 国立大学法人東北大学 気化器
US9357881B2 (en) * 2012-03-31 2016-06-07 Pitco Frialator, Inc. Oil level detection system for deep fat fryer
JP2014211345A (ja) * 2013-04-18 2014-11-13 株式会社八洲測器 液面検出装置
US20150323938A1 (en) * 2014-05-09 2015-11-12 Honeywell International Inc. Temperature-based level detection and control method and apparatus
EP2995913B1 (en) * 2014-09-10 2020-06-17 Bruker Switzerland AG Robust dynamical method for detecting the level of a liquid using resistance temperature detectors
JP6212467B2 (ja) * 2014-11-13 2017-10-11 株式会社フジキン 液面計及び液体原料気化供給装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3009809B2 (ja) * 1993-08-26 2000-02-14 株式会社鷺宮製作所 半導体加工用液体原料収容容器における液面検出装置
CN1247974A (zh) * 1998-09-17 2000-03-22 武藏野机器株式会社 气压式液面计
CN1465741A (zh) * 2002-06-03 2004-01-07 �ձ�AERA��ʽ���� 液体材料汽化及供给装置
JP4405315B2 (ja) * 2004-05-28 2010-01-27 シャープ株式会社 蒸気調理器
CN101430044A (zh) * 2007-08-23 2009-05-13 乔治洛德方法研究和开发液化空气有限公司 一种液化气气化方法、气化装置和一种使用该气化方法和装置的液化气供应装置
US20120017675A1 (en) * 2010-07-23 2012-01-26 Rosemount Aerospace Inc. Systems and Methods for Liquid Level Sensing Having a Differentiating Output

Also Published As

Publication number Publication date
US10604840B2 (en) 2020-03-31
KR20170026607A (ko) 2017-03-08
TWI592639B (zh) 2017-07-21
TW201631299A (zh) 2016-09-01
WO2016075892A1 (ja) 2016-05-19
KR101930303B1 (ko) 2018-12-18
CN107003168A (zh) 2017-08-01
JP6212467B2 (ja) 2017-10-11
JP2016095212A (ja) 2016-05-26
US20170327949A1 (en) 2017-11-16

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