CN106935588A - 半导体存储器装置 - Google Patents
半导体存储器装置 Download PDFInfo
- Publication number
- CN106935588A CN106935588A CN201611235726.9A CN201611235726A CN106935588A CN 106935588 A CN106935588 A CN 106935588A CN 201611235726 A CN201611235726 A CN 201611235726A CN 106935588 A CN106935588 A CN 106935588A
- Authority
- CN
- China
- Prior art keywords
- column structure
- film
- semiconductor memory
- memory system
- lattice
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/10—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/10—EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
- H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
Abstract
Description
Claims (14)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562272733P | 2015-12-30 | 2015-12-30 | |
US62/272,733 | 2015-12-30 | ||
US15/200,254 US9780105B2 (en) | 2015-12-30 | 2016-07-01 | Semiconductor memory device including a plurality of columnar structures and a plurality of electrode films |
US15/200,254 | 2016-07-01 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106935588A true CN106935588A (zh) | 2017-07-07 |
CN106935588B CN106935588B (zh) | 2020-12-11 |
Family
ID=59226835
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201611235726.9A Active CN106935588B (zh) | 2015-12-30 | 2016-12-28 | 半导体存储器装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9780105B2 (zh) |
CN (1) | CN106935588B (zh) |
TW (1) | TWI625841B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110875298A (zh) * | 2018-09-04 | 2020-03-10 | 东芝存储器株式会社 | 半导体装置 |
CN112542461A (zh) * | 2019-09-20 | 2021-03-23 | 铠侠股份有限公司 | 半导体存储器装置 |
CN113169041A (zh) * | 2018-12-07 | 2021-07-23 | 日升存储公司 | 形成多层垂直nor型存储器串阵列的方法 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013012553A (ja) * | 2011-06-28 | 2013-01-17 | Toshiba Corp | 半導体記憶装置 |
US9842651B2 (en) | 2015-11-25 | 2017-12-12 | Sunrise Memory Corporation | Three-dimensional vertical NOR flash thin film transistor strings |
US11120884B2 (en) | 2015-09-30 | 2021-09-14 | Sunrise Memory Corporation | Implementing logic function and generating analog signals using NOR memory strings |
US9972640B1 (en) * | 2016-11-17 | 2018-05-15 | Sandisk Technologies Llc | Three-dimensional memory device with self-aligned drain side select gate electrodes and method of making thereof |
US10475812B2 (en) | 2018-02-02 | 2019-11-12 | Sunrise Memory Corporation | Three-dimensional vertical NOR flash thin-film transistor strings |
JP2019161010A (ja) | 2018-03-13 | 2019-09-19 | 東芝メモリ株式会社 | 半導体装置 |
US10504918B2 (en) | 2018-03-16 | 2019-12-10 | Toshiba Memory Corporation | Memory device |
WO2021127218A1 (en) | 2019-12-19 | 2021-06-24 | Sunrise Memory Corporation | Process for preparing a channel region of a thin-film transistor |
WO2022108848A1 (en) | 2020-11-17 | 2022-05-27 | Sunrise Memory Corporation | Methods for reducing disturb errors by refreshing data alongside programming or erase operations |
TW202310429A (zh) | 2021-07-16 | 2023-03-01 | 美商日升存儲公司 | 薄膜鐵電電晶體的三維記憶體串陣列 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20120299086A1 (en) * | 2011-05-24 | 2012-11-29 | Samsung Electronics Co., Ltd. | Semiconductor memory devices |
US20140217493A1 (en) * | 2007-12-11 | 2014-08-07 | Kabushiki Kaisha Toshiba | Non-volatile semiconductor storage device and method of manufacturing the same |
US20150001460A1 (en) * | 2013-06-27 | 2015-01-01 | Taekyung Kim | Semiconductor device |
CN105027285A (zh) * | 2013-01-24 | 2015-11-04 | 美光科技公司 | 三维存储器 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4772656B2 (ja) * | 2006-12-21 | 2011-09-14 | 株式会社東芝 | 不揮発性半導体メモリ |
JP2010161132A (ja) | 2009-01-07 | 2010-07-22 | Toshiba Corp | 不揮発性半導体記憶装置、及びその製造方法 |
JP2010219409A (ja) | 2009-03-18 | 2010-09-30 | Toshiba Corp | 不揮発性半導体記憶装置 |
JP4969707B2 (ja) | 2010-07-08 | 2012-07-04 | パナソニック株式会社 | 不揮発性半導体記憶装置およびその製造方法 |
DE102011084603A1 (de) * | 2010-10-25 | 2012-05-16 | Samsung Electronics Co., Ltd. | Dreidimensionales Halbleiterbauelement |
JP2013004778A (ja) | 2011-06-17 | 2013-01-07 | Toshiba Corp | 半導体記憶装置 |
US8987805B2 (en) | 2012-08-27 | 2015-03-24 | Samsung Electronics Co., Ltd. | Vertical type semiconductor devices including oxidation target layers |
KR102002802B1 (ko) | 2012-09-05 | 2019-07-23 | 삼성전자주식회사 | 반도체 장치 |
US20160268299A1 (en) * | 2015-03-13 | 2016-09-15 | Kabushiki Kaisha Toshiba | Semiconductor device and method for manufacturing the same |
-
2016
- 2016-07-01 US US15/200,254 patent/US9780105B2/en active Active
- 2016-12-16 TW TW105141703A patent/TWI625841B/zh active
- 2016-12-28 CN CN201611235726.9A patent/CN106935588B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20140217493A1 (en) * | 2007-12-11 | 2014-08-07 | Kabushiki Kaisha Toshiba | Non-volatile semiconductor storage device and method of manufacturing the same |
US20120299086A1 (en) * | 2011-05-24 | 2012-11-29 | Samsung Electronics Co., Ltd. | Semiconductor memory devices |
CN105027285A (zh) * | 2013-01-24 | 2015-11-04 | 美光科技公司 | 三维存储器 |
US20150001460A1 (en) * | 2013-06-27 | 2015-01-01 | Taekyung Kim | Semiconductor device |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110875298A (zh) * | 2018-09-04 | 2020-03-10 | 东芝存储器株式会社 | 半导体装置 |
CN110875298B (zh) * | 2018-09-04 | 2024-01-09 | 铠侠股份有限公司 | 半导体装置 |
CN113169041A (zh) * | 2018-12-07 | 2021-07-23 | 日升存储公司 | 形成多层垂直nor型存储器串阵列的方法 |
CN113169041B (zh) * | 2018-12-07 | 2024-04-09 | 日升存储公司 | 形成多层垂直nor型存储器串阵列的方法 |
CN112542461A (zh) * | 2019-09-20 | 2021-03-23 | 铠侠股份有限公司 | 半导体存储器装置 |
CN112542461B (zh) * | 2019-09-20 | 2024-01-19 | 铠侠股份有限公司 | 半导体存储器装置 |
Also Published As
Publication number | Publication date |
---|---|
US9780105B2 (en) | 2017-10-03 |
CN106935588B (zh) | 2020-12-11 |
TWI625841B (zh) | 2018-06-01 |
TW201735327A (zh) | 2017-10-01 |
US20170194341A1 (en) | 2017-07-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN106935588A (zh) | 半导体存储器装置 | |
US9960173B2 (en) | Semiconductor memory device | |
US8791464B2 (en) | Nonvolatile semiconductor memory device and method for manufacturing same | |
KR102108879B1 (ko) | 수직형 메모리 장치 및 그 제조 방법 | |
US10096613B2 (en) | Semiconductor device and method for manufacturing same | |
US9646989B1 (en) | Three-dimensional memory device | |
TWI604563B (zh) | 半導體裝置及其製造方法 | |
US20110031550A1 (en) | Nonvolatile semiconductor memory device and method for manufacturing same | |
US9929041B1 (en) | Semiconductor device and method for manufacturing same | |
US20160056210A1 (en) | Word line connection for memory device and method of making thereof | |
KR20120089127A (ko) | 수직 구조의 비휘발성 메모리 소자 | |
JP2020043119A (ja) | 半導体装置 | |
CN108389865B (zh) | 具有倾斜栅电极的三维半导体存储器件 | |
CN112349728A (zh) | 半导体存储器装置 | |
JP2010027870A (ja) | 半導体記憶装置及びその製造方法 | |
JP2012119478A (ja) | 半導体記憶装置及びその製造方法 | |
US10622303B2 (en) | Semiconductor device having a stacked body including a first stacked portion and a second stacked portion | |
JP7123585B2 (ja) | 半導体記憶装置 | |
CN111048520B (zh) | 半导体装置和制造半导体装置的方法 | |
TW201703233A (zh) | 半導體記憶裝置及其製造方法 | |
JP2011014666A (ja) | 半導体装置及びその製造方法 | |
US20140027835A1 (en) | Semiconductor device and method for manufacturing the same | |
CN111354739A (zh) | 一种三维有结半导体存储器件及其制造方法 | |
US9761605B1 (en) | Semiconductor memory device | |
US9660076B2 (en) | Semiconductor memory device and method for manufacturing the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20170808 Address after: Tokyo, Japan Applicant after: TOSHIBA MEMORY Corp. Address before: Tokyo, Japan Applicant before: Toshiba Corp. |
|
TA01 | Transfer of patent application right | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo Patentee after: Kaixia Co.,Ltd. Address before: Tokyo Patentee before: TOSHIBA MEMORY Corp. Address after: Tokyo Patentee after: TOSHIBA MEMORY Corp. Address before: Tokyo Patentee before: Pangea Co.,Ltd. |
|
CP01 | Change in the name or title of a patent holder | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220129 Address after: Tokyo Patentee after: Pangea Co.,Ltd. Address before: Tokyo Patentee before: TOSHIBA MEMORY Corp. |
|
TR01 | Transfer of patent right |