CN106662815B - 负型感光性树脂组合物、树脂固化膜、隔壁和光学元件 - Google Patents

负型感光性树脂组合物、树脂固化膜、隔壁和光学元件 Download PDF

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CN106662815B
CN106662815B CN201580038938.5A CN201580038938A CN106662815B CN 106662815 B CN106662815 B CN 106662815B CN 201580038938 A CN201580038938 A CN 201580038938A CN 106662815 B CN106662815 B CN 106662815B
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resin composition
ink
photosensitive resin
negative photosensitive
alkali
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Chinese (zh)
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CN106662815A (zh
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高桥秀幸
山田光太郎
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AGC Inc
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Asahi Glass Co Ltd
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/10Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/12Light sources with substantially two-dimensional radiating surfaces
    • H05B33/22Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/12Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Electroluminescent Light Sources (AREA)
CN201580038938.5A 2014-07-18 2015-07-15 负型感光性树脂组合物、树脂固化膜、隔壁和光学元件 Active CN106662815B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014-148345 2014-07-18
JP2014148345 2014-07-18
PCT/JP2015/070289 WO2016010077A1 (ja) 2014-07-18 2015-07-15 ネガ型感光性樹脂組成物、樹脂硬化膜、隔壁および光学素子

Publications (2)

Publication Number Publication Date
CN106662815A CN106662815A (zh) 2017-05-10
CN106662815B true CN106662815B (zh) 2020-06-16

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Country Status (5)

Country Link
JP (1) JP6536578B2 (ko)
KR (1) KR102411740B1 (ko)
CN (1) CN106662815B (ko)
TW (1) TWI660239B (ko)
WO (1) WO2016010077A1 (ko)

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KR102622857B1 (ko) * 2017-02-09 2024-01-10 동우 화인켐 주식회사 유기발광소자 및 양자점발광소자의 화소정의막 형성용 흑색 감광성 수지 조성물
CN110249264A (zh) * 2017-02-21 2019-09-17 日本瑞翁株式会社 负型感光性树脂组合物
KR102469945B1 (ko) 2017-07-14 2022-11-23 삼성디스플레이 주식회사 표시 장치 및 그 제조방법
KR102146095B1 (ko) * 2017-09-15 2020-08-19 주식회사 엘지화학 화학증폭형 포토레지스트 조성물, 포토레지스트 패턴, 및 포토레지스트 패턴 제조방법
CN110412829A (zh) * 2018-04-26 2019-11-05 东友精细化工有限公司 负型感光性树脂组合物、光固化图案及图像显示装置
KR102311491B1 (ko) * 2019-02-13 2021-10-08 삼성에스디아이 주식회사 2중층 격벽 조성물, 이를 이용한 2중층 격벽 및 2중층 격벽을 포함하는 디스플레이 소자
CN111752097A (zh) * 2019-03-29 2020-10-09 常州强力电子新材料股份有限公司 自发光感光性树脂组合物、彩色滤光片和图像显示装置
KR20200135682A (ko) 2019-05-24 2020-12-03 삼성디스플레이 주식회사 디스플레이 장치 및 그 제조방법
KR20220149673A (ko) * 2020-03-04 2022-11-08 에이지씨 가부시키가이샤 포지티브형 감광성 수지 조성물
KR20210121917A (ko) * 2020-03-31 2021-10-08 동우 화인켐 주식회사 광변환 잉크 조성물, 컬러필터 및 화상표시장치
WO2022092155A1 (ja) 2020-10-28 2022-05-05 セントラル硝子株式会社 含フッ素樹脂、撥液剤、感光性樹脂組成物、硬化物およびディスプレイ
WO2022210797A1 (ja) * 2021-03-29 2022-10-06 株式会社カネカ ネガ型感光性組成物、光半導体装置、固体撮像装置、及び電子機器
CN114203748A (zh) * 2021-12-10 2022-03-18 Tcl华星光电技术有限公司 显示面板以及其制造方法
KR20240002709A (ko) 2022-06-29 2024-01-05 샌트랄 글래스 컴퍼니 리미티드 감광성 수지 조성물, 수지막, 경화물, 격벽, 유기 전계발광 소자, 파장 변환층, 디스플레이, 경화물의 제조 방법 및 격벽의 제조 방법

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Publication number Publication date
TWI660239B (zh) 2019-05-21
TW201619694A (zh) 2016-06-01
JPWO2016010077A1 (ja) 2017-04-27
CN106662815A (zh) 2017-05-10
WO2016010077A1 (ja) 2016-01-21
JP6536578B2 (ja) 2019-07-03
KR102411740B1 (ko) 2022-06-21
KR20170032318A (ko) 2017-03-22

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Applicant before: Asahi Glass Co., Ltd.

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