CN106601612B - 用于超高选择性的氮化物蚀刻的系统和方法 - Google Patents
用于超高选择性的氮化物蚀刻的系统和方法 Download PDFInfo
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Abstract
本发明涉及用于超高选择性的氮化物蚀刻的系统和方法。一种用于选择性蚀刻衬底上的氮化硅层的方法包括将衬底布置在衬底处理室的衬底支撑件上。衬底处理室包括上室区、布置在上室区的外部的感应线圈、包括衬底支撑件的下室区和气体分配装置。气体分配装置包括与上室区和下室区流体连通的多个孔。该方法包括供应蚀刻气体混合物到上室区并且通过供给电力到感应线圈以在上室区中引燃感应耦合等离子体。该蚀刻气体混合物蚀刻氮化硅、促进二氧化硅钝化以及促进多晶硅钝化。该方法包括选择性蚀刻衬底上的氮化硅层并在预定时间段后熄灭感应耦合等离子体。
Description
相关申请的交叉引用
本申请要求于2015年10月15日提交的美国临时申请No.62/241,827的权益。上述所引用的申请的全部公开内容通过引用并入本文。
技术领域
本发明涉及衬底处理系统,并且更具体地涉及用于选择性地蚀刻氮化硅的系统和方法。
背景技术
本文提供的背景描述的目的是总体上呈现本公开的背景。本发明署名的发明人的工作,就其在该背景技术部分以及说明书的一些方面中所描述的、可能不符合作为提交时的现有技术的范围而言,既不明确也不暗示地承认其作为本公开的现有技术。
衬底处理系统可以被用于蚀刻诸如半导体晶片之类的衬底上的膜。衬底处理系统通常包括处理室、气体分配装置以及衬底支撑件。在处理过程中,将衬底布置在衬底支撑件上。可以将不同的气体混合物引入处理室并且可以使用射频(RF)等离子体激活化学反应。
现在参考图1,当整合一些诸如垂直NAND器件之类的半导体衬底时,需要相对于其他暴露的材料以非常高的选择性蚀刻氮化硅。热磷酸是用于蚀刻这些器件中的氮化硅膜的主要化学物质。这种蚀刻工艺有需要解决的、包括规模在36层以上的能力、减少缺陷和点蚀、以及增强对蚀刻速率的控制的一些限制。例如,在图1中,单个缺陷颗粒10可以引起存储装置14中的写入线串的损失。
发明内容
一种用于选择性蚀刻在衬底上的氮化硅层的方法包括将衬底布置在衬底处理室的衬底支撑件上。衬底处理室包括上室区、布置在上室区的外部的感应线圈、包括衬底支撑件的下室区和布置在上室区和下室区之间的气体分配装置。气体分配装置包括与上室区和下室区流体连通的多个孔。该方法包括供应蚀刻气体混合物到上室区并且通过供给电力到感应线圈以在上室区中引燃感应耦合等离子体。该方法包括选择蚀刻气体混合物以蚀刻氮化硅、促进二氧化硅钝化以及促进多晶硅钝化。该方法包括选择性蚀刻在衬底上的氮化硅层并在预定时间段后熄灭感应耦合等离子体。
在其他特征中,该蚀刻气体混合物包括氮化硅蚀刻促进剂,该氮化硅蚀刻促进剂包括选自由三氟化氮(NF3)、二氟甲烷(CH2F2)、四氟甲烷(CF4)、和氟甲烷(CH3F)组成的组中的至少一种气体。
在其他特征中,该氮化硅蚀刻促进剂包括选自由分子氧(O2)、分子氮(N2)、和一氧化二氮(N2O)组成的组中的至少一种气体。
在其他特征中,该蚀刻气体混合物包括二氧化硅钝化促进剂,该二氧化硅钝化促进剂包括选自由氟甲烷(CH3F)和二氟甲烷(CH2F2)组成的组中的至少一种气体。
在其他特征中,该二氧化硅钝化促进剂还包括选自由分子氧(O2)、分子氮(N2)、和一氧化二氮(N2O)组成的组中的至少一种气体。
在其他特征中,该蚀刻气体混合物包括多晶硅钝化促进剂,该多晶硅钝化促进剂包括选自由分子氧(O2)、分子氮(N2)、和一氧化二氮(N2O)组成的组中的至少一种气体。
在其他特征中,该方法包括,在选择性蚀刻后,通过供应干燥清洁气体混合物到衬底处理室并在衬底处理室中引燃等离子体持续预定的时间段来干燥清洁衬底。
在其他特征中,该方法包括使使用蚀刻气体混合物的蚀刻和使用干燥清洁气体混合物的干燥清洁重复一次或多次。
在其他特征中,干燥清洁气体混合物包括选自由二氧化碳(CO2)和一氧化碳(CO)组成的组中的至少一种气体。该干燥清洁气体混合物还包括例如氩(Ar)、氦(He)、氖(Ne)和/或其它稀有或惰性气体之类的气体。该干燥清洁气体混合物包括选自由分子氮(N2)或一氧化二氮(N2O)组成的组中的至少一种气体。
在其他特征中,衬底处理室中的压强处于0.5至5托的压强范围内。
在其他特征中,在蚀刻过程中,向衬底支撑件供给射频(RF)偏置。在蚀刻过程中,不向衬底支撑件供给射频(RF)偏置。
在其他特征中,气体分配装置包括喷头,该喷头包括多个孔。该多个孔具有0.1”到0.75”的范围内的直径。
在其他特征中,该方法包括在蚀刻过程中使气体分配装置接地。
在其他特征中,该蚀刻气体混合物包括三氟化氮(NF3)、二氟甲烷(CH2F2)、分子氧(O2)、分子氮(N2)、一氧化二氮(N2O)和二氧化碳(CO2)。
在其他特征中,该蚀刻气体混合物包括四氟甲烷(CF4)、氟甲烷(CH3F)、分子氧(O2)、分子氮(N2)、一氧化二氮(N2O)和二氧化碳(CO2)。
在其他特征中,相对于二氧化硅选择性蚀刻衬底上的氮化硅层。相对于多晶硅选择性蚀刻衬底上的氮化硅层。相对于碳氧化硅(SiOC)选择性蚀刻衬底上的氮化硅层。相对于铪氧化物(HfOx)选择性蚀刻衬底上的氮化硅层。
在其他特征中,相对于氮化钛(TiN)选择性蚀刻衬底上的氮化硅层。相对于氮化钽(TaN)选择性蚀刻衬底上的氮化硅层。相对于钨(W)选择性蚀刻衬底上的氮化硅层。相对于氮化钛铝(TiAlN)选择性蚀刻衬底上的氮化硅层。
具体而言,本发明的一些方面可以阐述如下:
1.一种用于选择性蚀刻衬底上的氮化硅层的方法,其包括:
将衬底布置在衬底处理室的衬底支撑件上,
其中所述衬底处理室包括上室区、布置在所述上室区的外部的感应线圈、包括所述衬底支撑件的下室区和布置在所述上室区和所述下室区之间的气体分配装置,以及
其中所述气体分配装置包括与所述上室区和所述下室区流体连通的多个孔;
供应蚀刻气体混合物到所述上室区;
通过供给电力到所述感应线圈以在所述上室区中引燃感应耦合等离子体,其中所述蚀刻气体混合物蚀刻氮化硅、促进二氧化硅钝化以及促进多晶硅钝化;
选择性蚀刻所述衬底上的所述氮化硅层;并且
在预定时间段后熄灭所述感应耦合等离子体。
2.根据条款1所述的方法,其中所述蚀刻气体混合物包括氮化硅蚀刻促进剂,所述氮化硅蚀刻促进剂包括选自由三氟化氮(NF3)、二氟甲烷(CH2F2)、四氟甲烷(CF4)、和氟甲烷(CH3F)组成的组中的至少一种气体。
3.根据条款2所述的方法,其中所述氮化硅蚀刻促进剂包括选自由分子氧(O2)、分子氮(N2)、和一氧化二氮(N2O)组成的组中的至少一种气体。
4.根据条款1所述的方法,其中所述蚀刻气体混合物包括二氧化硅钝化促进剂,所述二氧化硅钝化促进剂包括选自由氟甲烷(CH3F)和二氟甲烷(CH2F2)组成的组中的至少一种气体。
5.根据条款4所述的方法,其中所述二氧化硅钝化促进剂还包括选自由分子氧(O2)、分子氮(N2)、和一氧化二氮(N2O)组成的组中的至少一种气体。
6.根据条款1所述的方法,其中所述蚀刻气体混合物包括多晶硅钝化促进剂,所述多晶硅钝化促进剂包括选自由分子氧(O2)、分子氮(N2)、和一氧化二氮(N2O)组成的组中的至少一种气体。
7.根据条款1所述的方法,其还包括,在所述选择性蚀刻后,通过供应干燥清洁气体混合物到所述衬底处理室并在所述衬底处理室中引燃等离子体持续预定的时间段来干燥清洁所述衬底。
8.根据条款7所述的方法,其还包括使使用所述蚀刻气体混合物的所述蚀刻和使用所述干燥清洁气体混合物的所述干燥清洁重复一次或多次。
9.根据条款7所述的方法,其中所述干燥清洁气体混合物包括选自由二氧化碳(CO2)和一氧化碳(CO)组成的组中的至少一种气体。
10.根据条款9所述的方法,其中所述干燥清洁气体混合物还包括选自包含氩(Ar)、氖(Ne)和氦(He)的组中的至少一种气体。
11.根据条款7所述的方法,其中所述干燥清洁气体混合物包括选自由分子氮(N2)或一氧化二氮(N2O)组成的组中的至少一种气体。
12.根据条款1所述的方法,其中所述衬底处理室中的压强处于0.5至5托的压强范围内。
13.根据条款1所述的方法,其中在所述蚀刻过程中,向所述衬底支撑件供给射频(RF)偏置。
14.根据条款1所述的方法,其中在所述蚀刻过程中,不向所述衬底支撑件供给射频(RF)偏置。
15.根据条款1所述的方法,其中所述气体分配装置包括喷头,所述喷头包括多个孔。
16.根据条款15所述的方法,其中所述多个孔具有0.1”到0.75”的范围内的直径。
17.根据条款1所述的方法,其还包括在所述蚀刻过程中使所述气体分配装置接地。
18.根据条款1所述的方法,其中所述蚀刻气体混合物包括三氟化氮(NF3)、二氟甲烷(CH2F2)、分子氧(O2)、分子氮(N2)、一氧化二氮(N2O)和二氧化碳(CO2)。
19.根据条款1所述的方法,其中所述蚀刻气体混合物包括四氟甲烷(CF4)、氟甲烷(CH3F)、分子氧(O2)、分子氮(N2)、一氧化二氮(N2O)和二氧化碳(CO2)。
20.根据条款1所述的方法,其中相对于二氧化硅选择性蚀刻所述衬底上的所述氮化硅层。
21.根据条款1所述的方法,其中相对于多晶硅选择性蚀刻所述衬底上的所述氮化硅层。
22.根据条款1所述的方法,其中相对于碳氧化硅(SiOC)选择性蚀刻所述衬底上的所述氮化硅层。
23.根据条款1所述的方法,其中相对于铪氧化物(HfOx)选择性蚀刻所述衬底上的所述氮化硅层。
24.根据条款1所述的方法,其中相对于氮化钛(TiN)选择性蚀刻所述衬底上的所述氮化硅层。
25.根据条款1所述的方法,其中相对于氮化钽(TaN)选择性蚀刻所述衬底上的所述氮化硅层。
26.根据条款1所述的方法,其中相对于钨(W)选择性蚀刻所述衬底上的所述氮化硅层。
27.根据条款1所述的方法,其中相对于氮化钛铝(TiAlN)选择性蚀刻所述衬底上的所述氮化硅层。
本公开的其他领域的应用将从详细描述、权利要求书和附图中变得显而易见。详细描述和具体实施例仅用于说明的目的,而不是意在限制本公开的范围。
附图说明
本公开将从详细描述和附图中变得更能被充分理解,其中:
图1是根据现有技术示出了具有使存储装置的两写入线短路的缺陷颗粒的存储装置的平面图;
图2是根据本公开用于选择性蚀刻氮化硅并执行等离子体干燥清洁的衬底处理室的实例的功能框图;
图3A-3B是根据本公开示出了用于选择性蚀刻氮化硅并执行等离子体干燥清洁的方法的实例的流程图;
图4示出了氮化硅的选择性蚀刻以及二氧化硅和多晶硅的钝化;
图5根据本公开示出了等离子体干燥清洁工艺;
图6是根据本公开示出了氮化硅蚀刻后,在没有进行等离子体干燥清洁的情况下的氟浓度的曲线图;以及
图7是根据本公开示出了使用选择性蚀刻工艺和等离子体干燥清洁后的碳、氮、氧、氟和硅浓度的曲线图。
在附图中,附图标记可以重复使用以标识相似和/或相同的元件。
具体实施方式
根据本公开的系统和方法利用提供高密度、感应耦合等离子体和可选的次级电容耦合等离子体的衬底处理系统。在一些实施例中,衬底处理系统包括由喷头分隔开的上室区和下室区。离子在上游上室区中产生,通过喷头过滤并在下游下室区中重新结合。粒子密度导致高的蚀刻速率以及二氧化硅和多晶硅的分子钝化能够实现高选择性。
在一些实施例中,可以向衬底支撑件施加RF偏置以产生次级电容耦合等离子体,以便产生额外的选择性自由基。在一些实施例中,高RF耦合效率提供高等离子体密度,而低鞘层电压从上室区和喷头的壁引入最少的溅射并因此引起最小的缺陷。
在一些实施例中,气体化学物质包括蚀刻气体混合物,该蚀刻气体混合物包括用于促进氮化硅蚀刻、用于钝化二氧化硅以及钝化多晶硅的处理气体。在一些实施例中,干燥清洁等离子体处理与蚀刻处理循环执行或者干燥清洁处理可以在蚀刻处理之后执行。该处理相对于二氧化硅和多晶硅选择性蚀刻氮化硅。此外,该处理相对于其他物质选择性蚀刻氮化硅,该其他物质如层间电介质、低k电介质、氧化物、可流动的氧化物、掺杂的氧化物、碳氧化硅(SiOC)、铪氧化物(HfOx),其中x是大于一的整数、氮化钛(TiN)、氮化钽(TaN)、钨(W)以及氮化钛铝(TiAlN)。
现在参考图2,示出了用于选择性蚀刻衬底上的氮化硅并干燥清洁衬底的衬底处理室100的实施例。衬底处理室100包括下室区102和上室区104。下室区102由室侧壁表面108、室底部表面110和气体分配装置114的下表面限定。上室区104由气体分配装置114的上表面和圆顶118的内表面限定。在一些实施例中,圆顶118是球形的,然而也可以使用具有平顶和扁平感应线圈的圆筒形上室区。
衬底支撑件122被布置在下室区104中。在一些实施例中,衬底支撑件122包括静电卡盘(ESC),然而也可以使用其他类型的衬底支撑件。在蚀刻和干燥清洁处理过程中,衬底126被布置在衬底支撑件122的上表面上。在一些实施例中,衬底126的温度可以由加热器板125、可选的具有流动通道的冷却板(未示出)和/或一个或多个传感器127控制,然而也可以使用任何其他合适的衬底加热器。
在一些实施例中,气体分配装置114包括喷头(例如,具有多个间隔开的孔129的板128)。该多个间隔开的孔129自板128的上表面延伸到板128的下表面。在一些实施例中,该多个孔具有0.1”(英寸)至0.75”的直径,然而也可以使用其他尺寸。在一些实施例中,板128是由诸如铝之类的导电材料制成的。在其他实施例中,板128是由诸如陶瓷之类的非导电材料制成的并包括嵌入的电极。
在一些实施例中,气体分配装置114的径向外端可以向上延伸并可以限定气体流动通道134。该气体流动通道134与多个孔136流体连通以便将气体从气体流动通道134引导至上室区104。在一些实施例中,多个孔136以如通过附图标记138示出的相对于板128的上表面成径向向内的锐角引导来自气体流动通道134的气体流。
感应线圈140被布置成围绕圆顶118的外部。感应线圈140在被激励时,产生在圆顶118内部的电磁场。气体扩散器142从气体输送系统150-1分配进料气体或进料气体混合物。在一些实施例中,使用扩散器142和/或多个孔136可以将气体引导至上室区。
在一些实施例中,气体输送系统150-1包括一个或多个气体源152、一个或多个阀154、一个或多个质量流量控制器(MFC)156、以及混合歧管158,然而也可以使用其他类型的气体输送系统。可以使用另一个气体输送系统150-2以供应进料气体或进料气体混合物至气体流动通道134(除了来自气体扩散器142的进料气体之外或者取代该进料气体)。
等离子体发生器170可以用于产生输出到感应线圈140的RF功率。等离子体在上室区104中产生。在一些实施例中,等离子体发生器170包括RF源172和匹配网络174。匹配网络174使RF源172的阻抗与感应线圈140的阻抗相匹配。在一些实施例中,气体分配装置114被接地。可以使用阀178和泵180来控制下室区102和上室区104内部的压强并分别从下室区102和上室区104排空反应物。
控制器176与气体输送系统150-1和150-2、阀178、泵180、加热器板125、和/或等离子体发生器170连通以控制处理气体流、清扫气体流、RF等离子体和室压。等离子体区190在上室区104中产生。附图标记190、192和194示出了来自气体扩散器142的处理气体流。
在一些实施例中,通过位于圆顶118的大气侧上的感应线圈使等离子体维持在圆顶118内部。使用气体扩散器142和/或孔136从室的顶部引入进料气体并且使用接地的气体分配装置114将等离子体约束在圆顶118内。冷等离子体扩散通过气体分配装置114并与位于下室区102中的衬底126反应。
将等离子体约束在圆顶118中使得等离子体物质能够体积复合并且预期的蚀刻物质能扩散通过气体分配装置114。在一些实施例中,不向衬底126施加偏置。结果,衬底126上没有活化鞘层并且离子不以任何有限能量击中衬底。一些量的离子将穿过气体分配装置114扩散出等离子体区。然而,扩散的等离子体的量的数量级比位于圆顶118内部的等离子体的量的数量级低。等离子体中的绝大多数离子通过高压下的体积复合而消失。在气体分配装置114的上表面处的表面复合损失也降低气体分配装置114以下的离子密度。
在其他实施例中,向衬底支撑件施加RF偏置。RF偏置发生器184选择性地向衬底支撑件提供RF偏置。可以在RF偏置发生器184和衬底支撑件之间使用匹配网络(未示出)。
施加到感应线圈的RF功率与RF偏置可以具有相同的或不同的频率或功率电平。在一些实施例中,施加到感应线圈的RF功率与RF偏置都可以为13.56MHz,然而也可以使用其他频率。仅举例而言,可以以例如2MHz、27MHz的频率或另外的频率提供RF偏置,而可以以13.56MHz的频率提供施加到感应线圈的RF。在一些实施例中,施加到感应线圈的RF功率可以处于1kW至5kW的范围内。在其他实施例中,施加到感应线圈的RF功率可以处于1kW至2.5kW的范围内。在一些实施中,可以100W至1kW的范围提供RF偏置功率,然而也可以使用其他功率电平。在一些实施例中,处理室中的压强处于0.3托至10托的范围内。在其他实施例中,处理室中的压强处于0.5托至5托的范围内。在一些实施例中,将衬底维持在0℃至120℃的温度。
现在参考图3A,示出了一种用于选择性蚀刻氮化硅的方法200。在204,将衬底布置在下室区中的衬底支撑件上。在208,供应蚀刻气体混合物至上室区。该蚀刻气体混合物包括用于促进氮化硅蚀刻、钝化多晶硅和钝化二氧化硅的一种或多种气体。在216,在上室区中引燃等离子体。此外,任选地可以供应RF偏置至下室区中的衬底支撑件。在220,蚀刻衬底持续预定的时间段。在224,在预定时间段后熄灭等离子体。在228,任选地可以供应干燥清洁气体混合物至上室区并且可以引燃等离子体持续预定的时间段。在干燥清洁处理过程中,可以供应RF偏置至衬底支撑件。在230中,在预定时间段后,熄灭等离子体。在234,可以循环的方式使蚀刻和干燥清洁的处理重复一次或多次。
现在参考图3B,另一种处理是从氮化硅蚀刻转变到等离子体干燥清洁而不熄灭等离子体。在240,使化学物质转变成干燥清洁气体混合物,而不熄灭等离子体。干燥清洁处理进行预定的时间段。在干燥清洁处理过程中,可以向衬底支撑件提供RF偏置。在242,可以循环的方式使蚀刻和干燥清洁的处理重复一次或多次,而不熄灭等离子体。在244,熄灭等离子体。替代地,当返回到蚀刻时可以熄灭等离子体,然后再次引燃等离子体以便进行蚀刻。
在一些实施例中,用于促进氮化物蚀刻的气体包括三氟化氮(NF3),二氟甲烷(CH2F2),四氟甲烷(CF4),氟甲烷(CH3F),分子氧、分子氮和一氧化二氮的组合(O2/N2/N2O),以及它们的组合。在一些实施例中,用于促进二氧化硅钝化的气体包括CH3F、CH2F2、和/或O2/N2/N2O。在一些实施例中,用于促进多晶硅钝化的气体包括O2/N2/N2O、N2O、或O2/N2。在一些实施例中,干燥清洁气体包括二氧化碳CO2、二氧化碳和氩(CO2/Ar)、一氧化碳(CO)、一氧化碳和氩(CO/Ar)或前述气体的组合、N2、或N2O。在一些实施例中,可以提供诸如氩(Ar)之类的等离子体稳定和稀释气体。
在一些实施例中,蚀刻气体混合物包括氮化物蚀刻气体、多晶硅钝化促进气体和二氧化硅钝化促进气体。在一些实施例中,氮化物蚀刻气体包括选自由NF3、CH2F2、CF4和CH3F以及任选地O2/N2/N2O组成的组中的至少一种气体。
在第一实施例中,蚀刻气体混合物包括NF3/CH2F2/O2/N2/N2O/CO2。流速的实例列于下文表1中。在这个实施例中,NF3促进氮化物蚀刻。CH2F2促进氮化物蚀刻并钝化二氧化硅。O2/N2/N2O促进氮化物蚀刻并促进多晶硅和二氧化硅钝化。在蚀刻处理之后执行干燥清洁步骤和/或可以循环执行蚀刻处理和干燥清洁处理。
在第二实施例中,蚀刻气体混合物包括CF4/CH3F/O2/N2/N2O/CO2。在这个实施例中,CF4促进氮化物蚀刻。流速的实例列于下文表1中。CH3F促进氮化物蚀刻并促进二氧化硅钝化。O2/N2/N2O促进氮化物蚀刻并促进多晶硅和二氧化硅钝化。在蚀刻处理之后执行等离子体干燥清洁步骤和/或可以循环执行蚀刻处理和干燥清洁处理。
现在参考图4-5,干燥等离子体去除处理避免了图案塌陷并能更好地控制顶部和底部凹进量。本文描述的系统和方法提供了独特的方法来用自由基R1钝化除氮化物之外的表面。干燥清洁或循环处理在蚀刻处理之后或者在主要蚀刻步骤之间除去钝化剂。在高压下操作的电感耦合等离子体源产生高密度的亚稳态的分子形式的自由基R1。该处理相比于聚合物化学物质具有增强的对于表面钝化的化学选择性。表面钝化可以用诸如自由基R2之类的其他自由基清除。
在图4中,来自下游等离子体的自由基由氮化物化学吸附。在氮化硅上的解吸速率很高。在氟化反应期间,氮化硅由F反应除去。来自下游等离子体的自由基由二氧化硅中的氧化物化学吸附。将氧化物上的解吸速率控制成非常低的速率。在氟化反应期间,通过分子钝化保护二氧化硅免受氟攻击。在图5中,在蚀刻后或者在蚀刻步骤之间,由干燥清洁气体提供的自由基除去多余的氟。
现在参考图6-7,分别监测上述不进行干燥清洁处理和进行干燥清洁处理的氮化硅蚀刻的氟水平。在图6中,曲线图示出了在氮化硅蚀刻后,在没有进行干燥清洁处理的情况下的氟浓度。在图7中,根据本公开示出了使用选择性蚀刻处理和干燥清洁处理后的碳、氮、氧、氟和硅浓度的曲线图。
本文描述的选择性氮化硅蚀刻提供了相对于多晶硅和二氧化硅的高选择性。在一些实施例中,在特征的底部处没有多晶硅损失并且蚀刻速率大于1000:1。此外,没有观察到点蚀。此外,二氧化硅选择性显示小于的二氧化硅变薄损失,的二氧化硅变薄损失是大于1000:1的选择性。鳍状物(fins)是陡峭的并且没有残余。本文描述的选择性氮化硅蚀刻通过增加蚀刻速率而减少了氟的暴露时间。该方法在处理之间、在处理期间或在处理之后使用自由基R2消除氟。此外,该方法相对于其他材料选择性蚀刻氮化硅,该其他材料例如碳氧化硅(SiOC)、铪氧化物(HfOx)其中x是大于一的整数、氮化钛(TiN)、氮化钽(TaN)、钨(W)以及氮化钛铝(TiAlN)。
在下表1中,示出了各种气体的典型流速。然而,也可以使用其他流速。
表1
前面的描述在本质上仅仅是说明性的并且决不旨在限制本公开、其应用或用途。本公开的广义教导可以各种形式来实施。因此,尽管本公开包括具体的实施例,但是本公开的真实范围不应被如此限制,因为其他的修改会在研究本附图、说明书和以下的权利要求书之后变得显而易见。应理解,方法内的一个或多个步骤可以不同的顺序(或同时)执行,而不改变本公开的原理。此外,尽管以上将这些实施方式中的每一个都描述为具有特定的特征,然而相对于本公开的任何实施方式描述的那些特征中的任一个或多个特征可以在其它实施方式中的任一实施方式中被实现和/或与其它实施方式中的任一实施方式的特征组合,即使没有明确描述该组合也如此。换句话说,所描述的实施方式不是互相排斥的,一个或多个实施方式彼此互换仍然落入本公开的范围内。
使用各种术语描述元件之间(例如,模块之间、电路元件之间、半导体层之间等)的空间和功能关系,该术语包括“连接”、“接合”、“耦合”、“邻接”、“下一个”、“在……顶部上”、“上面”、“下面”、以及“设置”。除非明确描述为“直接”,否则当在上述公开中描述第一元件与第二元件之间的关系时,该关系既可以是直接关系,其中该第一元件与该第二元件之间不存在其他中间元件,也可以是间接关系,其中该第一元件与该第二元件之间存在(或者在空间上或者在功能上)一个或多个中间元件。如本文所使用的,短语A、B和C中的至少一个应被解释为是指使用非排他性逻辑“或”的逻辑(A或B或C),而不应该被解释为是指“至少一个A、至少一个B、以及至少一个C”。
在一些实现方式中,控制器是系统的一部分,该系统可以是上述实例的一部分。这种系统可以包括半导体处理设备,其包括一个或多个处理工具、一个或多个室、用于处理的一个或多个平台和/或具体的处理组件(晶片基座、气流系统等)。这些系统可以与用于控制它们在处理半导体晶片或衬底之前、期间和之后的操作的电子器件一体化。电子器件可以称为“控制器”,该控制器可以控制一个或多个系统的各种元件或子部件。根据处理要求和/或系统的类型,控制器可以被编程以控制本文公开的任何工艺,包括控制工艺气体输送、温度设置(例如,加热和/或冷却)、压强设置、真空设置、功率设置、射频(RF)发生器设置、RF匹配电路设置、频率设置、流速设置、流体输送设置、位置及操作设置、晶片转移进出工具和其它转移工具和/或与具体系统连接或通过接口连接的装载锁。
宽泛地讲,控制器可以被定义为接收指令、发布指令、控制操作、启用清洁操作、启用端点测量等等的具有各种集成电路、逻辑、存储器和/或软件的电子器件。集成电路可以包括存储程序指令的固件形式的芯片、数字信号处理器(DSP)、定义为专用集成电路(ASIC)的芯片和/或一个或多个微处理器或执行程序指令(例如,软件)的微控制器。程序指令可以是以各种单独设置(或程序文件)的形式传送到控制器的指令,该设置定义用于在半导体晶片或系统上或针对半导体晶片或系统执行特定过程的操作参数。在一些实施方式中,操作参数可以是由工艺工程师定义的用于在制备晶片的一个或多个(种)层、材料、金属、氧化物、硅、二氧化硅、表面、电路和/或管芯期间完成一个或多个处理步骤的配方的一部分。
在一些实现方式中,控制器可以是与系统集成、耦合或者说是通过网络连接系统或它们的组合的计算机的一部分或者与该计算机耦合。例如,控制器可以在“云”中或者是晶片厂(fab)主机系统的全部或一部分,其可以允许远程访问晶片处理。计算机可以启用对系统的远程访问以监测制造操作的当前进程,检查过去的制造操作的历史,检查多个制造操作的趋势或性能标准,改变当前处理的参数,设置处理步骤以跟随当前的处理或者开始新的工艺。在一些实例中,远程计算机(例如,服务器)可以通过网络给系统提供工艺配方,网络可以包括本地网络或互联网。远程计算机可以包括能够输入或编程参数和/或设置的用户界面,该参数和/或设置然后被从远程计算机传送到系统。在一些实例中,控制器接收数据形式的指令,该指令指明在一个或多个操作期间将要执行的每个处理步骤的参数。应当理解,参数可以针对将要执行的工艺类型以及工具类型,控制器被配置成连接或控制该工具类型。因此,如上所述,控制器可以例如通过包括一个或多个分立的控制器而分布,这些分立的控制器通过网络连接在一起并且朝着共同的目标(例如,本文所述的工艺和控制)工作。用于这些目的的分布式控制器的实例可以是与一个或多个远程集成电路(例如,在平台水平或作为远程计算机的一部分)通信的室上的一个或多个集成电路,它们结合以控制室上的工艺。
示例的系统可以包括但不限于等离子体蚀刻室或模块、沉积室或模块、旋转清洗室或模块、金属电镀室或模块、清洁室或模块、倒角边缘蚀刻室或模块、物理气相沉积(PVD)室或模块、化学气相沉积(CVD)室或模块、原子层沉积(ALD)室或模块、原子层蚀刻(ALE)室或模块、离子注入室或模块、轨道室或模块、以及在半导体晶片的制备和/或制造中可以关联上或使用的任何其它的半导体处理系统。
如上所述,根据将要由工具执行的一个或多个工艺步骤,控制器可以与一个或多个其它的工具电路或模块、其它工具组件、群集工具、其它工具界面、相邻的工具、邻接工具、位于整个工厂中的工具、主机、另一个控制器、或者在将晶片的容器往来于半导体制造工厂中的工具位置和/或装载口搬运的材料搬运中使用的工具通信。
Claims (26)
1.一种用于选择性蚀刻衬底上的氮化硅层的方法,其包括:
将衬底布置在衬底处理室的衬底支撑件上,
其中所述衬底处理室包括上室区、布置在所述上室区的外部的感应线圈、包括所述衬底支撑件的下室区和布置在所述上室区和所述下室区之间的气体分配装置,以及
其中所述气体分配装置包括与所述上室区和所述下室区流体连通的多个孔;
供应蚀刻气体混合物到所述上室区;
通过供给电力到所述感应线圈以在所述上室区中引燃感应耦合等离子体,其中所述蚀刻气体混合物蚀刻氮化硅、促进二氧化硅钝化以及促进多晶硅钝化;
选择性蚀刻所述衬底上的所述氮化硅层;
在预定时间段后熄灭所述感应耦合等离子体;并且
在所述选择性蚀刻后,通过供应干燥清洁气体混合物到所述衬底处理室并在所述衬底处理室中引燃等离子体持续预定的时间段来干燥清洁所述衬底。
2.根据权利要求1所述的方法,其中所述蚀刻气体混合物包括氮化硅蚀刻促进剂,所述氮化硅蚀刻促进剂包括选自由三氟化氮(NF3)、二氟甲烷(CH2F2)、四氟甲烷(CF4)、和氟甲烷(CH3F)组成的组中的至少一种气体。
3.根据权利要求2所述的方法,其中所述氮化硅蚀刻促进剂包括选自由分子氧(O2)、分子氮(N2)、和一氧化二氮(N2O)组成的组中的至少一种气体。
4.根据权利要求1所述的方法,其中所述蚀刻气体混合物包括二氧化硅钝化促进剂,所述二氧化硅钝化促进剂包括选自由氟甲烷(CH3F)和二氟甲烷(CH2F2)组成的组中的至少一种气体。
5.根据权利要求4所述的方法,其中所述二氧化硅钝化促进剂还包括选自由分子氧(O2)、分子氮(N2)、和一氧化二氮(N2O)组成的组中的至少一种气体。
6.根据权利要求1所述的方法,其中所述蚀刻气体混合物包括多晶硅钝化促进剂,所述多晶硅钝化促进剂包括选自由分子氧(O2)、分子氮(N2)、和一氧化二氮(N2O)组成的组中的至少一种气体。
7.根据权利要求1所述的方法,其还包括使使用所述蚀刻气体混合物的所述蚀刻和使用所述干燥清洁气体混合物的所述干燥清洁重复一次或多次。
8.根据权利要求1所述的方法,其中所述干燥清洁气体混合物包括选自由二氧化碳(CO2)和一氧化碳(CO)组成的组中的至少一种气体。
9.根据权利要求8所述的方法,其中所述干燥清洁气体混合物还包括选自包含氩(Ar)、氖(Ne)和氦(He)的组中的至少一种气体。
10.根据权利要求1所述的方法,其中所述干燥清洁气体混合物包括选自由分子氮(N2)或一氧化二氮(N2O)组成的组中的至少一种气体。
11.根据权利要求1所述的方法,其中所述衬底处理室中的压强处于0.5至5托的压强范围内。
12.根据权利要求1所述的方法,其中在所述蚀刻过程中,向所述衬底支撑件供给射频(RF)偏置。
13.根据权利要求1所述的方法,其中在所述蚀刻过程中,不向所述衬底支撑件供给射频(RF)偏置。
14.根据权利要求1所述的方法,其中所述气体分配装置包括喷头,所述喷头包括多个孔。
15.根据权利要求14所述的方法,其中所述多个孔具有0.1”到0.75”的范围内的直径。
16.根据权利要求1所述的方法,其还包括在所述蚀刻过程中使所述气体分配装置接地。
17.根据权利要求1所述的方法,其中所述蚀刻气体混合物包括三氟化氮(NF3)、二氟甲烷(CH2F2)、分子氧(O2)、分子氮(N2)、一氧化二氮(N2O)和二氧化碳(CO2)。
18.根据权利要求1所述的方法,其中所述蚀刻气体混合物包括四氟甲烷(CF4)、氟甲烷(CH3F)、分子氧(O2)、分子氮(N2)、一氧化二氮(N2O)和二氧化碳(CO2)。
19.根据权利要求1所述的方法,其中相对于二氧化硅选择性蚀刻所述衬底上的所述氮化硅层。
20.根据权利要求1所述的方法,其中相对于多晶硅选择性蚀刻所述衬底上的所述氮化硅层。
21.根据权利要求1所述的方法,其中相对于碳氧化硅(SiOC)选择性蚀刻所述衬底上的所述氮化硅层。
22.根据权利要求1所述的方法,其中相对于铪氧化物(HfOx)选择性蚀刻所述衬底上的所述氮化硅层。
23.根据权利要求1所述的方法,其中相对于氮化钛(TiN)选择性蚀刻所述衬底上的所述氮化硅层。
24.根据权利要求1所述的方法,其中相对于氮化钽(TaN)选择性蚀刻所述衬底上的所述氮化硅层。
25.根据权利要求1所述的方法,其中相对于钨(W)选择性蚀刻所述衬底上的所述氮化硅层。
26.根据权利要求1所述的方法,其中相对于氮化钛铝(TiAlN)选择性蚀刻所述衬底上的所述氮化硅层。
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